TWI693722B - 使用磊晶剝離之整合太陽能收集器及冷焊接合之半導體太陽能電池 - Google Patents
使用磊晶剝離之整合太陽能收集器及冷焊接合之半導體太陽能電池 Download PDFInfo
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- TWI693722B TWI693722B TW101124535A TW101124535A TWI693722B TW I693722 B TWI693722 B TW I693722B TW 101124535 A TW101124535 A TW 101124535A TW 101124535 A TW101124535 A TW 101124535A TW I693722 B TWI693722 B TW I693722B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10F77/00—Constructional details of devices covered by this subclass
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- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
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- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
- H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
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- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
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- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Sustainable Development (AREA)
Applications Claiming Priority (2)
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| US201161505014P | 2011-07-06 | 2011-07-06 | |
| US61/505,014 | 2011-07-06 |
Publications (2)
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| TW201320369A TW201320369A (zh) | 2013-05-16 |
| TWI693722B true TWI693722B (zh) | 2020-05-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101124535A TWI693722B (zh) | 2011-07-06 | 2012-07-06 | 使用磊晶剝離之整合太陽能收集器及冷焊接合之半導體太陽能電池 |
Country Status (11)
| Country | Link |
|---|---|
| US (3) | US20130037095A1 (enExample) |
| EP (1) | EP2729968B1 (enExample) |
| JP (1) | JP6312257B2 (enExample) |
| KR (1) | KR101996607B1 (enExample) |
| CN (2) | CN106098842B (enExample) |
| AU (2) | AU2012280933A1 (enExample) |
| CA (1) | CA2840968A1 (enExample) |
| ES (1) | ES2834435T3 (enExample) |
| HK (1) | HK1197315A1 (enExample) |
| TW (1) | TWI693722B (enExample) |
| WO (1) | WO2013006803A2 (enExample) |
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| US10741712B2 (en) * | 2012-02-15 | 2020-08-11 | Alta Devices, Inc. | Photovoltaic module containing shingled photovoltaic tiles and fabrication processes thereof |
| US9087905B2 (en) * | 2012-10-03 | 2015-07-21 | International Business Machines Corporation | Transistor formation using cold welding |
| US9666739B2 (en) * | 2013-06-28 | 2017-05-30 | Sunpower Corporation | Photovoltaic cell and laminate metallization |
| WO2015119690A1 (en) * | 2013-11-11 | 2015-08-13 | The Regents Of The University Of Michigan | Thermally-assisted cold-weld bonding for epitaxial lift-off process |
| WO2015081320A1 (en) | 2013-11-29 | 2015-06-04 | Forrest Stephen R | Autonomous solar tracking in flat-plate photovoltaic panels using kirigami-inspired microstructures |
| TWI681565B (zh) * | 2014-01-15 | 2020-01-01 | 美國密西根州立大學 | 利用超晶格磊晶層對磊晶剝離薄膜裝置行非破壞性晶圓回收 |
| JP6570009B2 (ja) * | 2014-01-15 | 2019-09-04 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | 印刷法によるエピタキシャルリフトオフ太陽電池の小型放物面型集光器との統合 |
| CN106575680A (zh) * | 2014-04-04 | 2017-04-19 | 密歇根大学董事会 | 集成有非追踪微型复合抛物面聚光器的经过外延剥离处理的gaas薄膜太阳能电池 |
| US10141465B2 (en) * | 2014-04-04 | 2018-11-27 | The Regents Of The University Of Michigan | Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators |
| US20170033247A1 (en) | 2014-04-29 | 2017-02-02 | The Regents Of The University Of Michigan | Flexible antenna integrated with an array of solar cells |
| USRE49869E1 (en) * | 2015-02-10 | 2024-03-12 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
| JP7057132B2 (ja) * | 2015-02-27 | 2022-04-19 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | 中間光学フィルターを有するメカニカルスタック型タンデム光起電力セル |
| US10340187B2 (en) | 2015-03-18 | 2019-07-02 | The Regents Of The University Of Michigan | Strain relief epitaxial lift-off via pre-patterned mesas |
| KR101743017B1 (ko) | 2015-05-19 | 2017-06-05 | 한국과학기술연구원 | 고속 에피택셜 리프트오프와 iii-v족 직접 성장용 템플릿을 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자 |
| EP4290765A3 (en) | 2015-09-24 | 2024-04-10 | CubicPV Inc. | System for testing photosensitive device degradation |
| JPWO2017057029A1 (ja) | 2015-09-28 | 2018-07-19 | シャープ株式会社 | 薄膜化合物太陽電池、薄膜化合物太陽電池の製造方法、薄膜化合物太陽電池アレイおよび薄膜化合物太陽電池アレイの製造方法 |
| FR3047350B1 (fr) * | 2016-02-03 | 2018-03-09 | Soitec | Substrat avance a miroir integre |
| KR102559479B1 (ko) * | 2018-03-16 | 2023-07-26 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 화합물 반도체 태양전지의 제조 방법 |
| DE102018002426A1 (de) * | 2018-03-26 | 2019-09-26 | Azur Space Solar Power Gmbh | Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren |
| KR20200021772A (ko) * | 2018-08-21 | 2020-03-02 | 엘지전자 주식회사 | 화합물 반도체 태양전지 및 이의 제조 방법 |
| KR20200023068A (ko) * | 2018-08-24 | 2020-03-04 | 엘지전자 주식회사 | 화합물 반도체 태양전지의 제조 방법 |
| WO2020051515A1 (en) * | 2018-09-07 | 2020-03-12 | The George Washington University | Linear voltage regulator circuit incorporating light emitting and photovoltaic devices |
| JP7316638B2 (ja) * | 2019-05-15 | 2023-07-28 | パナソニックＩｐマネジメント株式会社 | 樹脂組成物、樹脂被覆基板および素子チップの製造方法 |
| US20230213243A1 (en) * | 2020-05-06 | 2023-07-06 | 3M Innovative Properties Company | Solar Energy Absorbing and Radiative Cooling Articles and Methods |
| US20230275173A1 (en) * | 2020-09-23 | 2023-08-31 | Antora Energy, Inc. | Structures and methods for producing an optoelectronic device |
| US12424965B2 (en) | 2022-06-02 | 2025-09-23 | Antora Energy, Inc. | Layered window in thermophotovoltaic devices |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101432887A (zh) * | 2006-05-05 | 2009-05-13 | 索尔福克斯股份有限公司 | 叠层的聚集太阳光的光电器件 |
| TW200946775A (en) * | 2008-02-27 | 2009-11-16 | Brilliant Film Llc | Concentrators for solar power generating systems |
| TW201034223A (en) * | 2008-12-30 | 2010-09-16 | 3M Innovative Properties Co | Broadband reflectors, concentrated solar power systems, and methods of using the same |
| WO2011066029A2 (en) * | 2009-09-10 | 2011-06-03 | The Regents Of The University Of Michigan | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU650782B2 (en) * | 1991-09-24 | 1994-06-30 | Canon Kabushiki Kaisha | Solar cell |
| US5288337A (en) * | 1992-06-25 | 1994-02-22 | Siemens Solar Industries, L.P. | Photovoltaic module with specular reflector |
| JP3467153B2 (ja) * | 1996-08-30 | 2003-11-17 | 株式会社リコー | 半導体素子 |
| US6440769B2 (en) * | 1999-11-26 | 2002-08-27 | The Trustees Of Princeton University | Photovoltaic device with optical concentrator and method of making the same |
| US6333458B1 (en) | 1999-11-26 | 2001-12-25 | The Trustees Of Princeton University | Highly efficient multiple reflection photosensitive optoelectronic device with optical concentrator |
| CN2613726Y (zh) * | 2003-04-17 | 2004-04-28 | 北京工业大学 | 复合抛物面聚光热电综合利用装置 |
| DE102004023856B4 (de) * | 2004-05-12 | 2006-07-13 | Rwe Space Solar Power Gmbh | Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode |
| US7319189B2 (en) * | 2004-10-27 | 2008-01-15 | Universite De Liege | Solar concentrator |
| HRPK20050434B3 (en) * | 2005-05-16 | 2008-06-30 | Urli Natko | Stationary photovoltaic module with low concentration ratio of solar radiation |
| AU2007207582A1 (en) * | 2006-01-17 | 2007-07-26 | Soliant Energy, Inc. | Concentrating solar panel and related systems and methods |
| US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
| US8742251B2 (en) * | 2006-12-20 | 2014-06-03 | Jds Uniphase Corporation | Multi-segment photovoltaic power converter with a center portion |
| JP5576273B2 (ja) * | 2007-07-03 | 2014-08-20 | マイクロリンク デバイセズ インコーポレイテッド | Ｉｉｉ−ｖ化合物薄膜太陽電池の加工方法 |
| US20090283133A1 (en) * | 2008-05-14 | 2009-11-19 | 3M Innovative Properties Company | Solar concentrating mirror |
| GB0816113D0 (en) * | 2008-09-04 | 2008-10-15 | Clive Barry M | Photvoltaic cell apparatus |
| AU2009230775B1 (en) * | 2009-10-26 | 2010-03-04 | Mip, Llc | Asymmetric parabolic compound concentrator with photovoltaic cells |
| JP5170073B2 (ja) * | 2009-12-24 | 2013-03-27 | セイコーエプソン株式会社 | 接合体の形成方法、接合体およびインクジェット記録ヘッド |
| JP5215284B2 (ja) * | 2009-12-25 | 2013-06-19 | シャープ株式会社 | 多接合型化合物半導体太陽電池 |
| CN102082195B (zh) * | 2010-09-30 | 2012-03-07 | 南通大学 | 自动跟踪双抛物面聚光发电供热系统 |
| AU2011366192A1 (en) | 2011-04-18 | 2013-10-31 | The Regents Of The University Of Michigan | Light trapping architecture for photovoltaic and photodetector applications |
-
2012
- 2012-07-06 AU AU2012280933A patent/AU2012280933A1/en not_active Abandoned
- 2012-07-06 JP JP2014519072A patent/JP6312257B2/ja active Active
- 2012-07-06 CN CN201610486903.4A patent/CN106098842B/zh not_active Expired - Fee Related
- 2012-07-06 US US13/543,450 patent/US20130037095A1/en not_active Abandoned
- 2012-07-06 EP EP12740782.3A patent/EP2729968B1/en not_active Not-in-force
- 2012-07-06 WO PCT/US2012/045778 patent/WO2013006803A2/en not_active Ceased
- 2012-07-06 HK HK14110688.0A patent/HK1197315A1/xx unknown
- 2012-07-06 CA CA2840968A patent/CA2840968A1/en not_active Abandoned
- 2012-07-06 TW TW101124535A patent/TWI693722B/zh active
- 2012-07-06 CN CN201280042064.7A patent/CN103890974A/zh active Pending
- 2012-07-06 KR KR1020147002202A patent/KR101996607B1/ko active Active
- 2012-07-06 ES ES12740782T patent/ES2834435T3/es active Active
-
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- 2015-09-14 US US14/853,317 patent/US20160141431A1/en not_active Abandoned
-
2016
- 2016-01-27 AU AU2016200455A patent/AU2016200455A1/en not_active Abandoned
-
2021
- 2021-09-24 US US17/484,342 patent/US12132127B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101432887A (zh) * | 2006-05-05 | 2009-05-13 | 索尔福克斯股份有限公司 | 叠层的聚集太阳光的光电器件 |
| CN101432887B (zh) | 2006-05-05 | 2010-09-29 | 索尔福克斯股份有限公司 | 叠层的聚集太阳光的光电器件 |
| TW200946775A (en) * | 2008-02-27 | 2009-11-16 | Brilliant Film Llc | Concentrators for solar power generating systems |
| TW201034223A (en) * | 2008-12-30 | 2010-09-16 | 3M Innovative Properties Co | Broadband reflectors, concentrated solar power systems, and methods of using the same |
| WO2011066029A2 (en) * | 2009-09-10 | 2011-06-03 | The Regents Of The University Of Michigan | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
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| ES2834435T3 (es) | 2021-06-17 |
| CN103890974A (zh) | 2014-06-25 |
| US12132127B2 (en) | 2024-10-29 |
| EP2729968B1 (en) | 2020-09-02 |
| TW201320369A (zh) | 2013-05-16 |
| JP6312257B2 (ja) | 2018-04-18 |
| WO2013006803A8 (en) | 2013-06-06 |
| US20130037095A1 (en) | 2013-02-14 |
| EP2729968A2 (en) | 2014-05-14 |
| AU2016200455A1 (en) | 2016-02-18 |
| JP2014523132A (ja) | 2014-09-08 |
| HK1197315A1 (en) | 2015-01-09 |
| CN106098842A (zh) | 2016-11-09 |
| US20160141431A1 (en) | 2016-05-19 |
| KR20140043805A (ko) | 2014-04-10 |
| AU2012280933A1 (en) | 2014-01-23 |
| CA2840968A1 (en) | 2013-01-10 |
| KR101996607B1 (ko) | 2019-10-01 |
| WO2013006803A2 (en) | 2013-01-10 |
| WO2013006803A3 (en) | 2013-05-10 |
| CN106098842B (zh) | 2018-12-18 |
| US20220013672A1 (en) | 2022-01-13 |
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