TWI693105B - Development liquid discharge nozzle and development processing apparatus - Google Patents
Development liquid discharge nozzle and development processing apparatus Download PDFInfo
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- TWI693105B TWI693105B TW104125273A TW104125273A TWI693105B TW I693105 B TWI693105 B TW I693105B TW 104125273 A TW104125273 A TW 104125273A TW 104125273 A TW104125273 A TW 104125273A TW I693105 B TWI693105 B TW I693105B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
藉由外構件之凹部及內構件之一側面而形成有第1流路,藉由外構件之凹部之帶狀區域及內構件之另一側面而形成有第2流路。於第1流路之下端,形成有狹縫狀之第1噴出口,於第2流路之下端,形成有狹縫狀之第2噴出口。於內構件之上表面與外構件之階差面之間形成有連通路。經由連通路而使第1流路與第2流路相互連通。於外構件,形成有將顯影液導入至第1及第2流路之導入路。 The first flow path is formed by the concave portion of the outer member and one side surface of the inner member, and the second flow path is formed by the band-shaped region of the concave portion of the outer member and the other side surface of the inner member. At the lower end of the first flow path, a slit-shaped first discharge port is formed, and at the lower end of the second flow path, a slit-shaped second discharge port is formed. A communication path is formed between the upper surface of the inner member and the step surface of the outer member. The first flow path and the second flow path communicate with each other via the communication path. In the outer member, an introduction path for introducing the developing solution to the first and second flow paths is formed.
Description
本發明係關於一種顯影液噴出噴嘴及顯影處理裝置。 The invention relates to a developing liquid ejection nozzle and a developing processing device.
於顯影處理裝置中,例如使用具有狹縫狀之噴出口之顯影液噴出噴嘴。專利文獻1所記載之顯影液噴出噴嘴包含具有撥水性之第1及第2構件、及具有親水性之第3構件。第1、第2及第3構件係分別設置為板狀,於第3構件之一面及另一面分別接合有第1及第2構件。於第3構件與第2構件之間形成有顯影液之流路,於其下端部設置有狹縫狀之噴出口。
In the development processing apparatus, for example, a developer discharge nozzle having a slit-shaped discharge port is used. The developer discharge nozzle described in
[專利文獻1]日本專利特開平11-221511號公報 [Patent Document 1] Japanese Patent Laid-Open No. 11-221511
於顯影處理時,包含顯影液及抗蝕劑殘渣等之溶液(以下,稱為處理溶液)會附著於顯影液噴出噴嘴。若處理溶液保持附著於顯影液噴出噴嘴之狀態而經過時間,則會自處理溶液析出固形物。析出之固形物成為顯影缺陷之因素。於顯影液之流路中,即便附著處理溶液,亦可藉由顯影液之流動而去除該處理溶液,因此不易析出固形物。另一方面,若處理溶液附著於無顯影液流動之部分,則該處理溶液難以被去除。因此,存在固形物析出之可能性。 During the development process, a solution containing a developing solution, resist residues, etc. (hereinafter, referred to as a processing solution) adheres to the developing solution ejection nozzle. If the processing solution remains attached to the developer discharge nozzle for a period of time, solids will precipitate out of the processing solution. The precipitated solid matter becomes a factor of developing defects. In the flow path of the developing solution, even if the processing solution is attached, the processing solution can be removed by the flow of the developing solution, so it is not easy to precipitate solid matter. On the other hand, if the processing solution is attached to a part where no developer flows, it is difficult to remove the processing solution. Therefore, there is a possibility that solids are precipitated.
於上述專利文獻1之顯影液噴出噴嘴中,由於第3構件為親水性,因此於第3構件之周圍容易附著處理溶液。即便處理溶液附著於第2構件與第3構件之間之流路,該處理溶液亦可藉由顯影液之流動被去除。另一方面,若處理溶液滲入第1構件與第3構件之間,則難以去除該顯影用液,而固形物容易析出。又,滲入之顯影用液因毛細管現象而緩緩行進至內部。因此,固形物之析出範圍擴大。
In the developer discharge nozzle of the above-mentioned
本發明之目的在於提供一種防止因固形物之析出產生顯影缺陷的顯影液噴出噴嘴及顯影處理裝置。 An object of the present invention is to provide a developer discharge nozzle and a development processing device that prevent development defects due to precipitation of solids.
(1)根據本發明之一態樣之顯影液噴出噴嘴具備:內構件,其具有相互朝向反方向之第1及第2側面;及外構件,其具有與內構件之第1側面對向之第1內表面及與內構件之第2側面對向之第2內表面;且於內構件之第1側面與外構件之第1內表面之間形成有上下延伸之第1流路,於內構件之第2側面與外構件之第2內表面之間形成有上下延伸之第2流路,將顯影液導入至第1及第2流路之導入路係形成於外構件,用以噴出顯影液之第1噴出口係形成於第1流路之下端部,且用以噴出顯影液之第2噴出口係形成於第2流路之下端部。 (1) The developer discharge nozzle according to one aspect of the present invention includes: an inner member having first and second sides facing in opposite directions; and an outer member having a first side facing the inner member The first inner surface and the second inner surface opposed to the second side surface of the inner member; and a first flow path extending vertically is formed between the first side surface of the inner member and the first inner surface of the outer member. A second flow path extending vertically is formed between the second side surface of the member and the second inner surface of the outer member, and the introduction path for introducing the developing solution to the first and second flow paths is formed in the outer member for ejecting development The first discharge port of the liquid is formed at the lower end of the first flow path, and the second discharge port for discharging the developer is formed at the lower end of the second flow path.
於該顯影液噴出噴嘴中,於內構件之第1側面與外構件之第1內表面之間形成有第1流路,且於內構件之第2側面與外構件之第2內表面之間形成有第2流路。通過形成於外構件之導入路而將顯影液導入至第1及第2流路。導入至第1流路之顯影液係自第1噴出口被噴出,導入至第2流路之顯影液係自第2噴出口被噴出。 In the developer discharge nozzle, a first flow path is formed between the first side surface of the inner member and the first inner surface of the outer member, and between the second side surface of the inner member and the second inner surface of the outer member The second flow path is formed. The developer is introduced into the first and second flow paths through the introduction path formed in the outer member. The developer introduced into the first flow path is discharged from the first discharge port, and the developer introduced into the second flow path is discharged from the second discharge port.
如此,顯影液於第1及第2流路之各者中流動。因此,無論包含顯影液及抗蝕劑殘渣等之溶液(以下,稱為處理溶液)附著於形成第1及第2流路之內構件之第1及第2側面、及外構件之第1及第2內表面之哪一者,均可藉由顯影液之流動而去除該處理溶液。藉此,防止自附 著之處理溶液析出固形物。其結果為,防止因固形物之析出產生顯影缺陷。 In this way, the developer flows through each of the first and second flow paths. Therefore, regardless of whether a solution containing a developing solution, resist residue, etc. (hereinafter, referred to as a processing solution) adheres to the first and second side surfaces of the inner member forming the first and second flow paths, and the first and second sides of the outer member Either of the second inner surfaces can remove the treatment solution by the flow of the developer. Take this to prevent self-attachment The treatment solution precipitated solids. As a result, development defects due to precipitation of solid matter are prevented.
(2)亦可為內構件較外構件具有更高之親水性。於該情形時,於藉由自顯影液噴出噴嘴對基板上噴出顯影液而於基板上形成顯影液之液層時,於內構件之下表面與基板之上表面之間形成充分之液體蓄積。藉此,防止液層於內構件之下表面與基板之上表面之間分離。 (2) The inner member may have higher hydrophilicity than the outer member. In this case, when the liquid layer of the developer is formed on the substrate by ejecting the developer from the developer discharge nozzle onto the substrate, sufficient liquid accumulation is formed between the lower surface of the inner member and the upper surface of the substrate. This prevents the liquid layer from separating between the lower surface of the inner member and the upper surface of the substrate.
(3)亦可為內構件具有將第1側面之上端部與第2側面之上端部連接之上表面,外構件具有將第1內表面之上端部與第2內表面之上端部連接並且與內構件之上表面對向之第3內表面,於內構件之上表面與外構件之第3內表面之間形成有使第1及第2流路連通之連通路,且導入路係以將顯影液導入連通路之方式形成。 (3) The inner member may have an upper surface connecting the upper end of the first side surface and the upper end of the second side surface, and the outer member may have an upper surface connecting the upper end of the first inner surface and the upper end of the second inner surface. A third inner surface facing the upper surface of the inner member is formed between the upper surface of the inner member and the third inner surface of the outer member to connect the first and second flow paths, and the introduction path is The developer is introduced into the communication path.
於該情形時,能夠以簡單之構成將顯影液導入至第1及第2流路。又,由於內構件之第1及第2側面及上表面分別形成顯影液之流路,因此可削減內構件之表面上的可能殘留處理溶液的部分。藉此,充分防止固形物之析出。 In this case, the developer can be introduced into the first and second flow paths with a simple structure. In addition, since the first and second side surfaces and the upper surface of the inner member respectively form the flow path of the developing solution, it is possible to reduce the portion of the surface of the inner member where the processing solution may remain. By this, the precipitation of solid matter is sufficiently prevented.
(4)亦可為顯影液噴出噴嘴進而具備於外構件之第1及第2內表面之間卡止內構件之卡止構件。 (4) The developer discharge nozzle may further include a locking member that locks the inner member between the first and second inner surfaces of the outer member.
於該情形時,可削減用於內構件之加工之成本,並且可將內構件固定於外構件之第1及第2內表面之間。 In this case, the cost for processing the inner member can be reduced, and the inner member can be fixed between the first and second inner surfaces of the outer member.
(5)亦可為外構件包含具有第1內表面之第1構件、及具有第2內表面之第2構件,且第1及第2構件係以將內構件夾於第1及第2內表面之間之狀態相互固定。 (5) The outer member may include a first member having a first inner surface and a second member having a second inner surface, and the first and second members may sandwich the inner member between the first and second members The states between the surfaces are fixed to each other.
於該情形時,顯影液噴出噴嘴之組裝變得容易。又,藉由利用第1及第2構件夾持內構件,而使內構件穩定地保持於第1及第2內表面之間。 In this case, the assembly of the developer discharge nozzle becomes easy. In addition, by sandwiching the inner member with the first and second members, the inner member is stably held between the first and second inner surfaces.
(6)亦可為第1及第2噴出口分別為狹縫狀,且相互並列地沿一方 向延伸。於該情形時,可於基板上高效率地形成顯影液之液層。 (6) The first and second ejection ports may be slit-shaped, and may be arranged side by side To extend. In this case, the liquid layer of the developer can be efficiently formed on the substrate.
(7)亦可為第1流路包含:第1帶狀流路,其係以沿第1噴出口而於一方向上延伸之方式形成;及複數條第1突出流路,其等係以分別自第1帶狀流路之上端部向上方突出,並且於一方向上排列之方式設置;第2流路包含:第2帶狀流路,其係以沿第2噴出口於一方向上延伸之方式形成;及複數條第2突出流路,其等係以分別自第2帶狀流路之上端部向上方突出,並且於一方向上排列之方式設置;且導入路包含複數條連通導入路,該複數條連通導入路係以分別連通於複數條第1及第2突出流路之方式設置。 (7) The first flow channel may also include: a first band-shaped flow channel, which is formed to extend in one direction along the first ejection port; and a plurality of first protruded flow channels, which are separated by It protrudes upward from the upper end of the first strip-shaped flow path and is arranged in a row in one direction; the second flow path includes: a second strip-shaped flow path that extends in a direction along the second ejection port Formed; and a plurality of second protruding flow paths, which are respectively protruded upward from the upper end of the second strip-shaped flow path and arranged in one direction; and the introduction path includes a plurality of connected introduction paths, which The plurality of communication introduction paths are provided so as to communicate with the plurality of first and second protruding flow paths, respectively.
於該情形時,自複數條第1突出流路對第1帶狀流路之整體均勻地導入顯影液,且自複數條第2突出流路對第2帶狀流路之整體均勻地導入顯影液。藉此,可自第1及第2噴出口之整體均勻地噴出顯影液。因此,可於基板上穩定地形成顯影液之液層。 In this case, the developer is uniformly introduced into the entirety of the first strip-shaped flow path from the plurality of first protruding flow paths, and the developer is uniformly introduced into the development of the entirety of the second strip-shaped flow path from the plural second protruding flow paths liquid. With this, the developer can be uniformly discharged from the entirety of the first and second discharge ports. Therefore, the liquid layer of the developer can be stably formed on the substrate.
(8)根據本發明之另一態樣之顯影裝置具備:上述顯影液噴出噴嘴;基板保持部,其以水平姿勢保持基板;顯影液供給系統,其通過導入路而對顯影液噴出噴嘴供給顯影液;及移動裝置,其使顯影液噴出噴嘴相對於藉由基板保持部保持之基板相對移動。 (8) A developing device according to another aspect of the present invention includes: the developer discharge nozzle; the substrate holding portion that holds the substrate in a horizontal posture; and a developer supply system that supplies development to the developer discharge nozzle through the introduction path Liquid; and a moving device that moves the developer discharge nozzle relative to the substrate held by the substrate holding portion.
於該顯影裝置中,一面使顯影液噴出噴嘴相對於基板相對移動,一面自顯影液噴出噴嘴對基板上噴出顯影液。藉此,於基板上形成顯影液之液層,進行基板之顯影處理。於該情形時,由於使用上述顯影液噴出噴嘴,因此防止因固形物之析出產生顯影缺陷。 In this developing device, the developer discharge nozzle is relatively moved with respect to the substrate, and the developer is discharged from the developer discharge nozzle onto the substrate. In this way, a liquid layer of the developing solution is formed on the substrate, and development processing of the substrate is performed. In this case, since the above-mentioned developer discharge nozzle is used, development defects due to precipitation of solid matter are prevented.
(9)亦可為移動裝置使顯影液噴出噴嘴於與內構件之第1及第2側面交叉之方向上移動。 (9) The moving device may move the developer discharge nozzle in a direction crossing the first and second side surfaces of the inner member.
於該情形時,可於基板上高效率地形成顯影液之液層。 In this case, the liquid layer of the developer can be efficiently formed on the substrate.
根據本發明,可防止因固形物之析出產生顯影缺陷。 According to the present invention, development defects due to precipitation of solid matter can be prevented.
1‧‧‧顯影處理裝置 1‧‧‧Development processing device
5‧‧‧框體 5‧‧‧Frame
6‧‧‧顯影液供給部 6‧‧‧Development solution supply section
7‧‧‧擋板 7‧‧‧Baffle
10‧‧‧旋轉保持部 10‧‧‧ Rotating and holding part
11‧‧‧旋轉夾頭 11‧‧‧Rotating chuck
12‧‧‧旋轉軸 12‧‧‧rotation axis
13‧‧‧馬達 13‧‧‧Motor
20‧‧‧處理護罩 20‧‧‧Handle shield
30‧‧‧沖洗噴嘴 30‧‧‧Flushing nozzle
61‧‧‧狹縫噴嘴 61‧‧‧slot nozzle
61a‧‧‧噴嘴臂 61a‧‧‧Nozzle arm
61b‧‧‧噴嘴安裝部 61b‧‧‧Nozzle mounting part
61x‧‧‧狹縫噴嘴 61x‧‧‧slot nozzle
62‧‧‧噴嘴升降機構 62‧‧‧Nozzle lifting mechanism
63‧‧‧噴嘴滑動機構 63‧‧‧Nozzle sliding mechanism
70‧‧‧待機槽 70‧‧‧ Standby slot
70a‧‧‧待機槽 70a‧‧‧standby slot
70b‧‧‧待機槽 70b‧‧‧standby slot
70c‧‧‧待機槽 70c‧‧‧Standby slot
71‧‧‧外構件 71‧‧‧External components
71a‧‧‧導入路 71a‧‧‧Introduction
71b‧‧‧孔部 71b‧‧‧Hole
72‧‧‧外構件 72‧‧‧External components
72b‧‧‧孔部 72b‧‧‧hole
73‧‧‧內構件 73‧‧‧Inner components
73a‧‧‧缺口 73a‧‧‧Notch
75‧‧‧卡止構件 75‧‧‧ locking member
75a‧‧‧螺絲 75a‧‧‧screw
80‧‧‧控制部 80‧‧‧Control Department
125‧‧‧護罩升降機構 125‧‧‧Shield lifting mechanism
611‧‧‧安裝底面 611‧‧‧ Installation bottom
612‧‧‧安裝側面 612‧‧‧Installation side
612a‧‧‧螺絲孔 612a‧‧‧screw hole
621‧‧‧抽吸路 621‧‧‧Suction path
622‧‧‧供給路 622‧‧‧Supply Road
623‧‧‧液體蓄積部 623‧‧‧Liquid accumulation department
624‧‧‧供給路 624‧‧‧Supply Road
630‧‧‧連結構件 630‧‧‧Connecting member
631‧‧‧抽吸路 631‧‧‧ Suction
635‧‧‧抽吸管 635‧‧‧Suction tube
710‧‧‧凹部 710‧‧‧recess
711‧‧‧帶狀區域 711‧‧‧banded area
712‧‧‧突出區域 712‧‧‧ Highlighted area
720‧‧‧凹部 720‧‧‧recess
721‧‧‧帶狀區域 721‧‧‧banded area
722‧‧‧突出區域 722‧‧‧ Highlighted area
CP‧‧‧連通路 CP‧‧‧Connect
DEV‧‧‧顯影處理單元 DEV‧‧‧Development processing unit
DEV1‧‧‧顯影處理單元 DEV1‧‧‧Development processing unit
DEV2‧‧‧顯影處理單元 DEV2‧‧‧Development processing unit
DEV3‧‧‧顯影處理單元 DEV3‧‧‧Development processing unit
FP1a‧‧‧流路 FP1a‧‧‧stream
FP2a‧‧‧流路 FP2a‧‧‧stream
FP1b‧‧‧流路 FP1b‧‧‧Stream
FP2b‧‧‧流路 FP2b‧‧‧stream
GP‧‧‧階差面 GP‧‧‧step difference surface
LL‧‧‧距離 LL‧‧‧Distance
MD‧‧‧移動方向 MD‧‧‧Movement direction
OP1‧‧‧噴出口 OP1‧‧‧Spray outlet
OP2‧‧‧噴出口 OP2‧‧‧Spray outlet
SC‧‧‧螺絲 SC‧‧‧screw
W‧‧‧基板 W‧‧‧Substrate
圖1係實施形態之顯影處理裝置之模式性俯視圖。 FIG. 1 is a schematic plan view of the development processing apparatus of the embodiment.
圖2係圖1之顯影處理裝置之模式性側視圖。 2 is a schematic side view of the development processing apparatus of FIG. 1.
圖3係表示狹縫噴嘴之移動路徑之圖。 FIG. 3 is a diagram showing the movement path of the slit nozzle.
圖4係表示狹縫噴嘴及噴嘴臂之外觀立體圖。 4 is a perspective view showing the appearance of a slit nozzle and a nozzle arm.
圖5係狹縫噴嘴之分解立體圖。 5 is an exploded perspective view of a slit nozzle.
圖6係狹縫噴嘴之縱剖視圖。 6 is a longitudinal cross-sectional view of a slit nozzle.
圖7係狹縫噴嘴及噴嘴臂之縱剖視圖。 7 is a longitudinal cross-sectional view of a slit nozzle and a nozzle arm.
圖8係圖7之A-A線剖視圖。 FIG. 8 is a cross-sectional view taken along line A-A of FIG. 7.
圖9係表示外構件之內表面之側視圖。 9 is a side view showing the inner surface of the outer member.
圖10係表示狹縫噴嘴之一端部之側視圖。 Fig. 10 is a side view showing one end of the slit nozzle.
圖11係用以對藉由狹縫噴嘴向基板供給顯影液進行說明之模式性剖視圖。 11 is a schematic cross-sectional view for explaining the supply of the developing solution to the substrate through the slit nozzle.
圖12係表示比較例之狹縫噴嘴之構成之剖視圖。 12 is a cross-sectional view showing the configuration of a slit nozzle of a comparative example.
以下,一面參照圖式一面對本發明之實施形態之顯影液噴出噴嘴及顯影處理裝置進行說明。於以下之實施形態中,顯影液噴出噴嘴為具有狹縫狀之噴出口之狹縫噴嘴。 Hereinafter, the developer discharge nozzle and the development processing apparatus of the embodiment of the present invention will be described with reference to the drawings. In the following embodiments, the developer discharge nozzle is a slit nozzle having a slit-shaped discharge port.
(1)顯影處理裝置之構成 (1) Structure of the development processing device
圖1係實施形態之顯影處理裝置之模式性俯視圖。圖2係圖1之顯影處理裝置之模式性側視圖。於圖1及圖2、及下述圖3以後之特定圖中,為了明確位置關係而標註表示相互正交之X方向、Y方向及Z方向之箭頭。X方向及Y方向於水平面內相互正交,Z方向相當於鉛垂方向。 FIG. 1 is a schematic plan view of the development processing apparatus of the embodiment. 2 is a schematic side view of the development processing apparatus of FIG. 1. In FIGS. 1 and 2 and the following specific drawings of FIG. 3 and the following, in order to clarify the positional relationship, arrows indicating the X direction, the Y direction, and the Z direction orthogonal to each other are marked. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.
如圖1所示,顯影處理裝置1具備框體5。於框體5內,設置有3個顯影處理單元DEV及顯影液供給部6。3個顯影處理單元DEV具有互為
相同之構成,且係以沿X方向排列之方式配置。各顯影處理單元DEV具備旋轉保持部10、處理護罩20及沖洗噴嘴30。
As shown in FIG. 1, the
如圖2所示,旋轉保持部10包含旋轉夾頭11、旋轉軸12及馬達13。旋轉夾頭11係設置於連接於馬達13之旋轉軸12之上端部。旋轉夾頭11藉由真空吸附基板W之下表面之大致中心部,而以水平姿勢保持基板W。藉由馬達13而使旋轉軸12及旋轉夾頭11一體地旋轉。藉此,使藉由旋轉夾頭11保持之基板W繞沿鉛垂方向(Z方向)之軸旋轉。
As shown in FIG. 2, the
以包圍旋轉保持部10之方式設置有處理護罩20。處理護罩20係藉由未圖示之護罩升降機構而於下方位置與上方位置之間升降。於處理護罩20位於下方位置之情形時,處理護罩20之上端較藉由旋轉夾頭11保持基板W之位置低。於相對於各顯影處理單元DEV搬入基板W時及搬出基板W時,該顯影處理單元DEV之處理護罩20係配置於下方位置。於護罩升降機構125位於上方位置之情形時,處理護罩20之上端較利用旋轉夾頭11保持基板W之位置更高,基板W之周圍係藉由處理護罩20而被包圍。於基板W之顯影處理時,處理護罩20係配置於上方位置,自旋轉之基板W飛散之液滴係由處理護罩20接住。被接住之液滴被導入至未圖示之排出部(排液管)。
The
沖洗噴嘴30係設置為可於處理護罩20之外側之待避位置與藉由旋轉夾頭11保持之基板W之中心部上方之沖洗位置之間旋動。沖洗噴嘴30於沖洗位置對藉由旋轉夾頭11保持之基板W上供給沖洗液。
The rinse
如圖1所示,顯影液供給部6包含狹縫噴嘴61、噴嘴臂61a、噴嘴升降機構62及噴嘴滑動機構63。狹縫噴嘴61係以沿Y方向延伸之方式設置,且經由噴嘴臂61a而連結於噴嘴升降機構62。狹縫噴嘴61藉由噴嘴升降機構62而沿Z方向升降。又,狹縫噴嘴61係以通過藉由各旋轉夾頭11保持之基板W之上方之方式,藉由噴嘴滑動機構63而沿3個顯影處理單元DEV之排列方向(X方向)移動。
As shown in FIG. 1, the
對狹縫噴嘴61,自未圖示之顯影液供給源經由噴嘴臂61a而供給顯影液。狹縫噴嘴61一面於藉由旋轉夾頭11保持之基板W之上方移動,一面對基板W上呈帶狀地噴出顯影液。藉此,以覆蓋基板W之上表面之方式形成顯影液之液層。可於基板W旋轉之狀態下形成顯影液之液層,或亦可於基板W之旋轉停止之狀態下形成顯影液之液層。
The
於相鄰之顯影處理單元DEV間及位於一端之顯影處理單元DEV之外側設置有待機槽70。狹縫噴嘴61於不對基板W上噴出顯影液期間,於任一待機槽70上待機。於待機槽70中,狹縫噴嘴61定期進行將滯留於內部之顯影液噴出而排出之自動噴灑處理。藉此,防止變質或經時劣化之顯影液被供給至基板W。又,於待機槽70中,進行狹縫噴嘴61之洗淨處理。
A
於框體50之一側面,以分別與3個顯影處理單元DEV對向之方式設置有3個擋板7。於對於各顯影處理單元DEV搬入基板W時及搬出基板W時,敞開對應之擋板7。於各顯影處理單元DEV中之顯影處理時,關閉對應之擋板7。
On one side surface of the frame 50, three
(2)顯影處理裝置之動作 (2) The operation of the development processing device
對顯影處理裝置1之動作之概要進行說明。圖3係表示狹縫噴嘴61之移動路徑之圖。顯影處理裝置1包含控制部80。藉由控制部80控制顯影處理裝置1之各構成要素之動作。於圖3中,將3個顯影處理單元DEV分別設為顯影處理單元DEV1、DEV2、DEV3,將3個待機槽70分別設為待機槽70a、70b、70c。顯影處理單元DEV1、DEV2、DEV3依序沿X方向排列。於顯影處理單元DEV1、DEV2之間配置有待機槽70a,於顯影處理單元DEV2、DEV3之間配置有待機槽70b,於顯影處理單元DEV3之外側配置有待機槽70c。
The outline of the operation of the
當狹縫噴嘴61位於待機槽70c上時,藉由未圖示之搬送裝置,將曝光處理後之基板W搬送至顯影處理單元DEV1之旋轉夾頭11上。於
該情形時,於顯影處理單元DEV1之處理護罩20位於下方位置之狀態下,將基板W搬送至顯影處理單元DEV1之旋轉夾頭11上,於搬送基板W之後,該處理護罩20上升至上方位置。繼而,狹縫噴嘴61移動至藉由顯影處理單元DEV1之旋轉夾頭11保持之基板W之一端部(於X方向上遠離待機槽70a側之端部)上,一面噴出顯影液一面移動至基板W之另一端部(於X方向上接近待機槽70a側之端部)上。其後,狹縫噴嘴61移動至待機槽70a上。
When the
於狹縫噴嘴61位於待機槽70a上時,藉由未圖示之搬送裝置,將曝光處理後之基板W搬送至顯影處理單元DEV2之旋轉夾頭11上。於該情形時,於顯影處理單元DEV2之處理護罩20位於下方位置之狀態下將基板W搬送至顯影處理單元DEV2之旋轉夾頭11上,於基板W之搬送後,該處理護罩20上升至上方位置。繼而,狹縫噴嘴61移動至藉由顯影處理單元DEV2之旋轉夾頭11保持之基板W之一端部(於X方向上接近待機槽70a側之端部)上,一面噴出顯影液一面移動至基板W之另一端部(於X方向上接近待機槽70b側之端部)上。其後,狹縫噴嘴61移動至待機槽70b上。
When the
於狹縫噴嘴61位於待機槽70b上時,藉由未圖示之搬送裝置,將曝光處理後之基板W搬送至顯影處理單元DEV3之旋轉夾頭11上。於該情形時,於顯影處理單元DEV3之處理護罩20位於下方位置之狀態下,將基板W搬送至顯影處理單元DEV3之旋轉夾頭11上,於基板W之搬送後,該處理護罩20上升至上方位置。繼而,狹縫噴嘴61移動至藉由顯影處理單元DEV3之旋轉夾頭11保持之基板W之一端部(於X方向上接近待機槽70b側之端部)上,一面噴出顯影液一面移動至基板W之另一端部(於X方向上接近待機槽70c側之端部)上。其後,狹縫噴嘴61移動至待機槽70c上。
When the
於顯影處理單元DEV1~DEV3之各者中,藉由使狹縫噴嘴61一面
於基板W上移動一面噴出顯影液,而於基板W上形成顯影液之液層。於該狀態下,進行形成於基板W上之感光性膜(抗蝕劑)之顯影反應。當形成顯影液之液層後經過預先規定之時間時,使沖洗噴嘴30移動至沖洗位置,噴出沖洗液。藉此,停止感光性膜之顯影反應。繼而,一面對基板W上噴出沖洗液一面藉由旋轉保持部10使基板W旋轉,而沖洗基板W上之顯影液。其後,藉由於沖洗液之噴出停止之狀態下使基板W旋轉,而自基板W甩掉沖洗液,使基板W乾燥。乾燥之基板W係藉由未圖示之搬送裝置而自旋轉夾頭11上被搬送。自旋轉夾頭11上搬送基板W時,處理護罩20下降至下方位置。於顯影處理裝置1中,反覆進行此種一連串動作。
In each of the development processing units DEV1 to DEV3, by making the
基板W對於顯影處理單元DEV1~DEV3之各者之搬入及搬出之時序並不限定於上述例,顯影處理裝置1之各部之動作速度亦可根據顯影處理時間、或搬送裝置之動作速度等而適當變更。又,顯影處理單元DEV、待機槽70及狹縫噴嘴61之數量亦可適當變更。
The timing of loading and unloading of the substrate W for each of the development processing units DEV1 to DEV3 is not limited to the above example, and the operation speed of each part of the
(3)狹縫噴嘴之構成 (3) Composition of slit nozzle
對狹縫噴嘴61之詳細情況進行說明。圖4係狹縫噴嘴61及噴嘴臂61a之一部分之外觀立體圖。圖5係狹縫噴嘴61之分解立體圖。圖6係狹縫噴嘴61之縱剖視圖,圖7係狹縫噴嘴61及噴嘴臂61a之一部分之縱剖視圖。
The details of the
如圖4所示,噴嘴臂61a包含具有大致L字狀之截面之噴嘴安裝部61b。於噴嘴安裝部61b安裝有狹縫噴嘴61。狹縫噴嘴61之上表面及一側面與噴嘴安裝部61b重疊。
As shown in FIG. 4, the
於噴嘴安裝部61b之上表面,安裝有連結構件630。於連結構件630,連接有抽吸管635之一端。抽吸管635之另一端係連接於未圖示之真空產生裝置(排氣裝置)。
The
如圖5所示,狹縫噴嘴61包含外構件71、72及內構件73。外構件
71、72及內構件73分別沿Y方向呈長條狀地延伸。上下方向上之外構件71、72之寬度互為相等,內構件73之寬度小於外構件71、72之寬度。內構件73係配置於外構件71、72之間。
As shown in FIG. 5, the
外構件71、72例如係藉由撥水性材料而形成,內構件73例如係藉由親水性材料而形成。作為外構件71、72之材料,例如可使用PCTFE(聚氯三氟乙烯)或PTFE(聚四氟乙烯)。作為內構件73之材料,例如可使用石英。
The
於外構件71之內表面(與內構件73對向之面),形成有固定深度之凹部710。凹部710包含帶狀區域711及複數條突出區域712。帶狀區域711沿外構件71之下端部於Y方向上延伸。複數條突出區域712係以自帶狀區域711之上端部分別向上方突出,並且於Y方向上等間隔地排列之方式設置。又,以與複數條突出區域712分別對應之方式,於外構件71形成有複數條導入路71a。各導入路71a之一端於對應之突出區域712內開口,另一端於外構件71之外表面開口。又,於外構件71之上端部及兩側部,設置有複數個孔部71b。
A
於外構件72之內表面(與內構件73對向之面),形成有固定深度之凹部720。凹部720包含帶狀區域721及複數條突出區域722。帶狀區域721具有與外構件71之帶狀區域711相同之形狀,各突出區域722具有與外構件71之各突出區域712相同之形狀。於外構件72之上端部及兩側部,設置有複數個孔部72b。
A
於內構件73之兩側部,自下端部起至固定之高度形成有缺口73a。內構件73係藉由下述卡止構件75(圖9)而卡止於外構件71、72之間。
如圖6所示,外構件71、72之外表面之下端部係以分別向內側傾斜之方式形成。又,內構件73之上表面及下表面係以分別連續地連接於內構件73之一側面及另一側面之方式設為曲面狀。
As shown in FIG. 6, the lower ends of the outer surfaces of the
於外構件72之內表面設置有階差,外構件72之上部之厚度大於下部之厚度。外構件72之內表面上部抵接於外構件71之內表面上部。凹部710、720係分別形成於外構件71、72之內表面下部。於凹部710、720之間配置有內構件73。
A step is provided on the inner surface of the
藉由外構件71之凹部710之帶狀區域711及內構件73之一側面而形成流路FP1a,藉由外構件72之凹部720之帶狀區域721及內構件73之另一側面而形成流路FP2a。又,於流路FP1a之下端,形成有狹縫狀之噴出口OP1,於流路FP2a之下端,形成有狹縫狀之噴出口OP2。噴出口OP1、OP2係相互平行地於Y方向上延伸。
The flow path FP1a is formed by the band-shaped
藉由外構件71之凹部710之複數條突出區域712及內構件73之一側面而形成有複數條流路FP1b,藉由外構件72之凹部720之複數條突出區域722及內構件73之另一側面而形成有複數條流路FP2b。於圖6中,僅表示1條流路FP1b及1條流路FP2b。於內構件73之上表面與外構件72之階差面GP之間形成有連通路CP。經由連通路CP而使複數條流路FP1b與複數條流路FP2b相互連通。為了於複數條流路FP1b與複數條流路FP2b之間使顯影液分散,而較佳為外構件71之導入路71a位於較內構件73之上端部更高之位置。
A plurality of flow paths FP1b are formed by the plurality of protruding
如圖7所示,噴嘴臂61a之噴嘴安裝部61b具有安裝底面611及安裝側面612。於安裝側面612,以沿Y方向排列之方式形成有複數個螺絲孔612a。於圖7中,僅表示1個螺絲孔612a。於外構件71之外表面抵接於安裝側面612之狀態下,使複數個螺絲SC通過外構件72之複數個孔部72b及外構件71之複數個孔部71b而螺入至安裝側面612之複數個螺絲孔612a。藉此,將外構件71、72固定於噴嘴安裝部61b。外構件71、72之上表面與噴嘴安裝部61b之安裝底面611對向。
As shown in FIG. 7, the
於噴嘴安裝部61b之內部,以相互連通之方式設置有抽吸路621、供給路622、液體蓄積部623及複數條供給路624。於連結構件
630之內部,形成有抽吸路631。以下,對噴嘴安裝部61b及連結構件630之內部構造進行說明。
Inside the
圖8係圖7之A-A線剖視圖。如圖8所示,液體蓄積部623沿Y方向一面逐漸擴大一面向下方延伸,進而以固定之寬度向下方延伸。抽吸路621自噴嘴安裝部61b之上表面延伸至液體蓄積部623。連結構件630之抽吸路631與抽吸路621連通。又,抽吸管635與抽吸路631連通。
FIG. 8 is a cross-sectional view taken along line A-A of FIG. 7. As shown in FIG. 8, the
供給路622係於X方向上與液體蓄積部623相鄰且沿Y方向延伸。供給路622之一端部大致垂直地彎曲而於液體蓄積部623之上端部開口。複數條(於本例中為5條)供給路624係以沿Y方向排列之方式設置,各供給路624之一端於液體蓄積部623之下端部開口。各供給路624於Y方向上具有固定之寬度,且於X方向上呈帶狀地延伸。如圖7所示,各供給路624與外構件71之複數條導入路71a連通。於本例中,1條供給路624與6條導入路71a連通。
The
通過供給路622,對液體蓄積部623供給顯影液。液體蓄積部623之顯影液通過複數條供給路624被導入狹縫噴嘴61。又,通過抽吸路621、631及圖8之抽吸管635,而抽吸液體蓄積部623內之氣體。藉此,於液體蓄積部623中,自顯影液去除氣泡。
Through the
(4)卡止構件 (4) Locking member
圖9及圖10係用以對卡止內構件73之卡止構件進行說明之圖。於圖9中,表示外構件71之內表面,於圖10中,表示狹縫噴嘴61之一端部。又,於圖9中,內構件73係以一點鏈線表示,於圖10中,內構件73係以虛線表示。
9 and 10 are diagrams for explaining the locking member that locks the
如圖9及圖10所示,於狹縫噴嘴61之兩端部,分別安裝有卡止構件75。如圖10所示,各卡止構件75係藉由一對螺絲75a而分別固定於外構件71、72之下端部。如圖9所示,各卡止構件75之一部分位於內構件73之各缺口73a內。藉此,藉由一對卡止構件75而卡止內構件73
之兩側部。
As shown in FIGS. 9 and 10, locking
又,於Y方向上,內構件73之上半部之長度大於外構件71之凹部710之長度。藉此,內構件73之一側面之兩端部於凹部710之外側抵接於外構件71之內表面。因此,防止內構件73之一側面抵接於外構件71之凹部710之底面。因此,如圖6所示,於內構件73之一側面與凹部710之底面之間確保流路FP1a、FP1b。同樣地,內構件73之另一側面之兩端部於凹部720之外側抵接於外構件72之內表面。因此,防止內構件73之另一側面抵接於外構件72之凹部720之底面。因此,如圖6所示,於內構件73之另一側面與凹部720之底面之間確保流路FP2a、FP2b。又,於內構件73之兩側面夾於外構件71、72之間之狀態下,藉由圖7之螺絲SC而將外構件71、72固定於噴嘴安裝部61b,藉此,內構件73夾持於外構件71、72之間。
In addition, in the Y direction, the length of the upper half of the
於本例中,分別螺固外構件71、72,而不螺固內構件73。例如,於內構件73包含石英之情形時,用以加工內構件73之成本變高。
因此,於內構件73形成用以螺固之孔部會成為成本增大之因素。因此,不螺固內構件73,而藉由卡止構件75卡止內構件73且藉由外構件71、72夾持內構件73,藉此抑制成本之增大。
In this example, the
(5)顯影液之供給 (5) Supply of developer
圖11係用以對顯影液藉由狹縫噴嘴61對基板W之供給進行說明之模式性剖視圖。如圖11所示,自噴嘴安裝部61b之液體蓄積部623通過複數條供給路624,將顯影液導入狹縫噴嘴61之複數條導入路71a。通過複數條導入路71a將顯影液導入複數條流路FP1b,並且通過複數條連通路CP將顯影液導入複數條流路FP2b。自複數條流路FP1b通過流路FP1a將顯影液導入噴出口OP1,自噴出口OP1對基板W上噴出顯影液。又,自複數條流路FP2b通過流路FP2a將顯影液導入噴出口OP2,自噴出口OP2對基板W上噴出顯影液。
FIG. 11 is a schematic cross-sectional view for explaining the supply of the developing solution to the substrate W through the
狹縫噴嘴61之移動方向MD(X方向)相對於噴出口OP1、OP2之長邊方向(Y方向)垂直。於狹縫噴嘴61之移動方向MD上,噴出口OP2位於較噴出口OP1更前方。
The movement direction MD (X direction) of the
於本實施形態中,由於自狹縫噴嘴61之2個噴出口OP1、OP2噴出顯影液,因此與僅自1個噴出口噴出顯影液之情形相比,可適當地分散顯影液之流量及噴出壓。藉此,可對基板W上均勻地噴出顯影液。其結果為,可於基板W上穩定地形成顯影液之液層。
In the present embodiment, since the developer liquid is discharged from the two discharge ports OP1 and OP2 of the
又,於內構件73具有親水性之情形時,於內構件73之下表面與基板W之上表面之間形成充分之液體蓄積。因此,可防止液層於內構件73之下表面與基板W之上表面之間分離。又,於外構件71、72具有撥水性之情形時,可抑制顯影液沿著外構件71、72之外表面漫起之現象。藉此,可使顯影液不易附著於外構件71、72之外表面,並且可穩定地維持基板W上之液層。
In addition, when the
圖12係表示比較例之狹縫噴嘴之構成之剖視圖。對於圖12之狹縫噴嘴61x,對與圖4~圖11之狹縫噴嘴61不同之方面進行說明。於圖12之狹縫噴嘴61x中,上下方向上之內構件73之寬度與上下方向上之外構件71、72之寬度大致相等。又,於外構件72與內構件73之間未形成流路FP2a、FP2b。因此,僅自噴出口OP1噴出顯影液。
12 is a cross-sectional view showing the configuration of a slit nozzle of a comparative example. The
使用本實施形態之狹縫噴嘴61及上述比較例之狹縫噴嘴61x於基板W上形成顯影液之液層,對其結果進行比較。具體而言,將狹縫噴嘴61、61x之移動速度及顯影液之流量設定為各種值,調查噴出口OP1至液層之前端部於Y方向上之距離LL(圖11)是否處於適當範圍內(於本例中為10mm以下)。於距離LL超過適當範圍之情形時,難以適當調整顯影液之液層之厚度及形成範圍,存在產生基板W之顯影不良之可能性。再者,顯影液之液層之形成係於停止基板W之旋轉之狀態下進行。
The
於表1及表2中,「○」表示距離LL(圖11)處於適當範圍內,「×」表示距離LL(圖11)超過適當範圍。 In Tables 1 and 2, "○" indicates that the distance LL (FIG. 11) is within an appropriate range, and "×" indicates that the distance LL (FIG. 11) is beyond the appropriate range.
如表1所示,於使用本實施形態之狹縫噴嘴61之情形時,僅於顯影液之流量為2000ml/min且狹縫噴嘴61之移動速度為40mm/s之情形時,距離LL大於適當範圍。
As shown in Table 1, when the
另一方面,如表2所示,於使用比較例之狹縫噴嘴61x之情形時,於顯影液之流量為1900ml/min且狹縫噴嘴61x之移動速度為40mm/s之情形時及為45mm/s之情形時距離LL超過適當範圍。又,於顯影液之流量為2000ml/min且狹縫噴嘴61x之移動速度為40mm/s之情形時、為45mm/min之情形時及為50mm/min之情形時,距離LL超過
適當範圍。
On the other hand, as shown in Table 2, when the
如此,可知藉由使用本實施形態之狹縫噴嘴61,與使用比較例之狹縫噴嘴61x之情形相比,可於基板W上適當地形成顯影液之液層。
In this way, it can be seen that by using the
(6)效果 (6) Effect
於本實施形態之狹縫噴嘴61中,藉由內構件73之一側面及外構件71之凹部710而形成有流路FP1a、FP1b,藉由內構件73之另一側面及外構件71之凹部720而形成有流路FP2a、FP2b。通過形成於外構件71之導入路71a,而將顯影液導入至流路FP1a、FP1b、FP2a、FP2b。
In the
藉由此種構成,無論包含顯影液及抗蝕劑殘渣等之溶液(處理溶液)附著於內構件73之兩側面及外構件71、72之凹部710、720之哪一者,均可藉由流路FP1a、FP1b、FP2a、FP2b中之顯影液之流動而將處理溶液去除。藉此,防止固形物自附著之處理溶液析出。其結果為,防止因固形物之析出產生顯影缺陷。
With this configuration, no matter which solution (processing solution) containing the developing solution and resist residue etc. adheres to both side surfaces of the
又,於本實施形態中,於內構件73之上表面與外構件72之階差面GP之間形成有連通路CP,經由該連通路CP而使流路FP1b、FP2b相互連通。藉此,能夠以簡單之構成將顯影液導入至流路FP1a、FP1b、FP2a、FP2b。又,由於內構件73之一側面及另一側面以及上表面分別形成顯影液之流路,因此可削減內構件73之表面上之可能殘留處理溶液之部分。藉此,充分防止固形物之析出。
In this embodiment, a communication path CP is formed between the upper surface of the
又,於本實施形態中,以沿噴出口OP1於一方向上延伸之方式形成有帶狀之流路FP1a,且以自流路FP1a之上端部向上方突出之方式形成有複數條流路FP1b。又,以沿噴出口OP2於一方向上延伸之方式形成有帶狀之流路FP2a,且以自流路FP2a之上端部向上方突出之方式形成有複數條流路FP2b。 In this embodiment, a band-shaped flow path FP1a is formed so as to extend in one direction along the discharge port OP1, and a plurality of flow paths FP1b are formed so as to protrude upward from the upper end of the flow path FP1a. Further, a band-shaped flow path FP2a is formed so as to extend in one direction along the ejection port OP2, and a plurality of flow paths FP2b are formed so as to protrude upward from the upper end of the flow path FP2a.
藉此,可自複數條流路FP1b對流路FP1a之整體均勻地導入顯影 液,且自複數條流路FP2b對流路FP2a之整體均勻地導入顯影液。因此,可自噴出口OP1、OP2之整體均勻地噴出顯影液。其結果為,可於基板W上穩定地形成顯影液之液層。 By this, the entire flow path FP1a can be uniformly introduced into the development from the plurality of flow paths FP1b Liquid, and the developer is uniformly introduced into the entire flow path FP2a from the plurality of flow paths FP2b. Therefore, the developer can be evenly discharged from the entirety of the discharge ports OP1 and OP2. As a result, the liquid layer of the developer can be stably formed on the substrate W.
(7)其他實施形態 (7) Other embodiments
(7-1) (7-1)
於上述實施形中,分開設置有外構件71、72,但本發明並不限定於此,亦可一體地設置外構件71、72。於該情形時,可削減零件件數。又,防止顯影液滲入外構件71與外構件72之間隙。
In the above embodiment, the
(7-2) (7-2)
於上述實施形中,經由連通路CP而使流路FP1b、FP2b相互連通,但本發明並不限定於此。亦可不使流路FP1b、FP2b相互連通,而不僅設有將顯影液導入至流路FP1b之導入路71a,還設有將顯影液導入至流路FP2b之導入路。
In the above embodiment, the flow paths FP1b and FP2b are communicated with each other via the communication path CP, but the present invention is not limited to this. The flow paths FP1b and FP2b may not be connected to each other, and not only the
(7-3) (7-3)
於上述實施形中,以沿噴出口OP1、OP2於一方向上延伸之方式分別形成有帶狀之流路FP1a、FP2a,以自流路FP1a、FP2a之上端部向上方突出之方式分別形成有複數條流路FP1b、FP2b,但各流路之形狀並不限定於此,亦可適當變更。 In the above embodiment, band-shaped flow paths FP1a and FP2a are formed so as to extend in one direction along the discharge ports OP1 and OP2, respectively, and a plurality of strips are formed so as to protrude upward from the upper ends of the flow paths FP1a and FP2a The flow paths FP1b and FP2b, but the shape of each flow path is not limited to this, and can be changed as appropriate.
(7-4) (7-4)
上述實施形態係對具有狹縫狀之噴出口OP1、OP2之狹縫噴嘴61應用本發明之例,但亦可對其他顯影液噴出噴嘴應用本發明。例如,亦可對具有圓形或橢圓形之噴出口之顯影液噴出噴嘴應用本發明。或者,亦可對複數條噴出口以沿一方向排列之方式設置之顯影液噴出噴嘴應用本發明。
The above embodiment is an example in which the present invention is applied to the
(8)申請專利範圍之各構成要素與實施形態之各要素之對應 (8) Correspondence between the constituent elements of the patent application scope and the elements of the embodiment
以下,對申請專利範圍之各構成要素與實施形態之各要素之對 應之例進行說明,但本發明並不限定於下述例。 The following is a comparison of each component of the patent application scope and each element of the embodiment The examples will be described, but the present invention is not limited to the following examples.
於上述實施形中,狹縫噴嘴61為顯影液噴出噴嘴之例,內構件73為內構件之例,外構件71、72為外構件之例,流路FP1a、FP1b為第1流路之例,流路FP2a、FP2b為第2流路之例,導入路71a為導入路及連通導入路之例,噴出口OP1為第1噴出口之例,噴出口OP2為第2噴出口之例,Y方向為一方向之例。
In the above embodiment, the
又,階差面GP為第3內表面之例,連通路CP為連通路之例,卡止構件75為卡止構件之例,外構件71為第1構件之例,外構件72為第2構件之例,流路FP1a為第1帶狀流路之例,流路FP1b為第1突出流路之例,流路FP2a為第2帶狀流路之例,流路FP2b為第2突出流路之例。
Further, the stepped surface GP is an example of a third inner surface, the communication path CP is an example of a communication path, the locking
又,顯影處理裝置1為顯影處理裝置之例,旋轉保持部10為基板保持部之例,噴嘴臂61a為顯影液供給系統之例,噴嘴升降機構62及噴嘴滑動機構63為移動裝置之例。
The
作為申請專利範圍之各構成要素,亦可使用具有申請專利範圍所記載之構成或功能之其他各種要素。 As each constituent element of the patent application scope, other various elements having the structure or function described in the patent application scope may also be used.
本發明可有效地利用於各種基板之顯影處理。 The invention can be effectively used for the development processing of various substrates.
61‧‧‧狹縫噴嘴 61‧‧‧slot nozzle
71‧‧‧外構件 71‧‧‧External components
71a‧‧‧導入路 71a‧‧‧Introduction
72‧‧‧外構件 72‧‧‧External components
73‧‧‧內構件 73‧‧‧Inner components
710‧‧‧凹部 710‧‧‧recess
711‧‧‧帶狀區域 711‧‧‧banded area
712‧‧‧突出區域 712‧‧‧ Highlighted area
720‧‧‧凹部 720‧‧‧recess
721‧‧‧帶狀區域 721‧‧‧banded area
722‧‧‧突出區域 722‧‧‧ Highlighted area
CP‧‧‧連通路 CP‧‧‧Connect
FP1a‧‧‧流路 FP1a‧‧‧stream
FP2a‧‧‧流路 FP2a‧‧‧stream
FP1b‧‧‧流路 FP1b‧‧‧Stream
FP2b‧‧‧流路 FP2b‧‧‧stream
GP‧‧‧階差面 GP‧‧‧step difference surface
OP1‧‧‧噴出口 OP1‧‧‧Spray outlet
OP2‧‧‧噴出口 OP2‧‧‧Spray outlet
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09276773A (en) * | 1996-04-10 | 1997-10-28 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
JP2003077820A (en) * | 2001-09-05 | 2003-03-14 | Tokyo Electron Ltd | Developing apparatus and developing method |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3120168B2 (en) * | 1994-05-30 | 2000-12-25 | 東京エレクトロン株式会社 | Processing method and processing apparatus |
JP3722629B2 (en) * | 1997-12-05 | 2005-11-30 | 大日本スクリーン製造株式会社 | Developer discharge nozzle and developer supply apparatus |
JP4189141B2 (en) * | 2000-12-21 | 2008-12-03 | 株式会社東芝 | Substrate processing apparatus and substrate processing method using the same |
JP4014035B2 (en) * | 2002-08-30 | 2007-11-28 | 東京エレクトロン株式会社 | Liquid processing equipment |
JP4021389B2 (en) * | 2003-08-26 | 2007-12-12 | 東京エレクトロン株式会社 | Substrate liquid processing method and substrate liquid processing apparatus |
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-
2014
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2015
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09276773A (en) * | 1996-04-10 | 1997-10-28 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
JP2003077820A (en) * | 2001-09-05 | 2003-03-14 | Tokyo Electron Ltd | Developing apparatus and developing method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI746041B (en) * | 2019-09-19 | 2021-11-11 | 日商斯庫林集團股份有限公司 | Slit nozzle and substrate processing device |
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TW201620618A (en) | 2016-06-16 |
WO2016035238A1 (en) | 2016-03-10 |
JP6316144B2 (en) | 2018-04-25 |
JP2016051882A (en) | 2016-04-11 |
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