TWI691102B - Manufacturing method of coated optical semiconductor element - Google Patents

Abstract

The present invention provides a method for manufacturing a coated optical semiconductor element that can surely peel the coated optical semiconductor element from the temporary fixing sheet.

The manufacturing method of the coated optical semiconductor element 5 includes the following steps: Step (1), which prepares a plurality of optical semiconductor elements 1 that are temporarily fixed on the upper surface of the first temporary fixing sheet 10 with a space from each other, and The first phosphor layer 2 of a plurality of optical semiconductor elements 1 is covered with the upper surface of the first temporary fixing sheet 10 exposed by the optical semiconductor elements 1 in direct contact; step (2), which is located between the adjacent optical semiconductor elements 1 The first phosphor layer 2 is provided with a groove 3 that is open upward; step (3), which fills at least the second coating layer 4 into the groove 3 to obtain the optical semiconductor element 1, the first phosphor layer 2 and the first 2 The coated optical semiconductor element 1 of the coating layer 4; and step (4), which peels the coated optical semiconductor element 1 from the first temporary fixing sheet 10. In step (3), the first phosphor layer 2 is interposed between the second coating layer 4 filled in the groove 3 and the first temporary fixing sheet 10.

Description

Manufacturing method of coated optical semiconductor element

The invention relates to a method for manufacturing a coated optical semiconductor device.

It has been known that an LED (Light Emitting Diode) covered with a coating layer such as a phosphor layer is mounted on a circuit board.

For example, the following method has been proposed: applying LEDs in which phosphors are dispersed to the LEDs arranged at specific intervals on the adhesive sheet, and then hardening the ceramic inks, thereby covering the LEDs with the ceramic ink layer. Thereafter, the ceramic ink layer between adjacent LEDs is cut and separated, and then, the LED and the ceramic ink layer are peeled from the adhesive sheet, and the flip chip is mounted on the circuit board (for example, refer to Patent Document 1).

In the method described in Patent Document 1, in a state where the LED is mounted on the circuit board, the ceramic ink layer is further sealed with a transparent resin.

Patent Literature 1: Japanese Patent Laid-Open No. 2012-39013

However, there is a need to cover the ceramic ink layer with sealing resin, etc., supported by the adhesive sheet. In this case, if the state supported by the adhesive sheet is sealed with sealing resin The ceramic ink layer is filled with sealing resin in the gap of the ceramic ink layer that has been cut and separated, and the sealing resin will directly contact the adhesive sheet. In this way, since the adhesive force (adhesive force) between the sealing resin and the adhesive sheet is high, there is a problem that the sealing resin cannot be peeled off from the adhesive sheet together with the LED and the ceramic ink layer.

An object of the present invention is to provide a method for manufacturing a coated optical semiconductor element that can surely peel the coated optical semiconductor element from the temporary fixing sheet.

The present invention [1] includes a method for manufacturing a coated optical semiconductor element, which includes the following steps: step (1), which prepares a plurality of optical semiconductor elements that are temporarily fixed at intervals on a temporary fixing sheet, and is coated with a first Covering the first coating layer of the plurality of optical semiconductor elements in direct contact with the upper surface of the temporary fixing sheet exposed from the plurality of optical semiconductor elements; step (2), which is located on the adjacent optical semiconductor elements The first coating layer in between is provided with a groove that opens upward; step (3), which fills at least the second coating layer into the groove to obtain the optical semiconductor element, the first coating layer, and the second The coated optical semiconductor element of the coating layer; step (4), which peels the coated optical semiconductor element from the temporary fixing sheet; and in the step (3), the first coating layer is interposed in the groove filled in the groove Between the second coating layer and the temporary fixing sheet.

According to this method, in step (3), since the first coating layer is interposed between the second coating layer filled in the groove and the temporary fixing sheet, the second coating layer is prevented from directly contacting the fixing sheet. Therefore, even if the adhesive force of the second coating layer is high, it is possible to prevent the second coating layer from adhering to the temporary fixing sheet.

As a result, in the step (4), the coated optical semiconductor element can be surely peeled from the temporary fixing sheet.

The invention [2] includes the method for manufacturing a coated optical semiconductor element as described in [1], wherein in the step (4), the coated optical semiconductor element is transferred from the temporary fixing sheet to the transfer Sheet, the adhesion of the coated optical semiconductor element to the transfer sheet is higher than the adhesion of the coated optical semiconductor element to the temporary fixing sheet.

According to this method, since the adhesion of the coated optical semiconductor element to the transfer sheet is higher than the adhesion of the coated optical semiconductor element to the temporary fixing sheet, in step (4), the coated optical semiconductor element can be more reliably fixed temporarily The sheet is transferred to the transfer sheet.

The present invention [3] includes the method for manufacturing a coated optical semiconductor element as described in [1] or [2], wherein the first coating layer is a first phosphor layer containing a phosphor.

According to this method, since the first coating layer contains the first phosphor layer of the phosphor, the first phosphor layer can perform wavelength conversion on the light emitted from the optical semiconductor element.

The present invention [4] includes the method for manufacturing a coated optical semiconductor device as described in [3], wherein in the step (3), the second coating is exposed so that the upper surface of the first phosphor layer is exposed The layer is filled into the above groove.

In this method, in step (3), the coating layer is filled into the groove in such a manner that the upper surface of the first phosphor layer is exposed, so that a coated optical semiconductor that emits light with upward directivity can be obtained element.

The present invention [5] includes the method for manufacturing a coated optical semiconductor device as described in [3], wherein in the step (3), the second coating layer is filled so as to cover the upper surface of the first coating layer To the above slot.

In this method, since the coating layer is filled into the groove so as to coat the upper surface of the first phosphor layer, a coated optical semiconductor element excellent in optical characteristics can be obtained.

The present invention [6] includes the method for manufacturing a coated optical semiconductor device according to any one of [1] to [3], wherein the second coating layer is a second phosphor layer containing phosphor.

In this method, since the second coating layer contains the second phosphor layer of the phosphor, the second phosphor layer can be used for wavelength conversion of the light emitted from the optical semiconductor element.

The present invention [7] includes the method for manufacturing a coated optical semiconductor device as described in [6], wherein in the step (3), the second coating layer is coated so as to cover the upper surface of the second phosphor layer Fill into the above tank.

In this method, in step (3), the coating layer is filled into the groove in such a manner that the upper surface of the second phosphor layer is exposed, so that a coated optical semiconductor that emits light with upward directivity can be obtained element. The present invention [1] includes a method for manufacturing a coated optical semiconductor element, which includes the following steps: step (1), which prepares a plurality of optical semiconductor elements that are temporarily fixed on a temporary fixing sheet at intervals from each other, and is coated with a first Covering the first coating layer of the plurality of optical semiconductor elements in direct contact with the upper surface of the temporary fixing sheet exposed from the plurality of optical semiconductor elements; step (2), which is located on the adjacent optical semiconductor elements The first coating layer in between is provided with a groove that opens upward; step (3), which fills at least the second coating layer into the groove to obtain the optical semiconductor element, the first coating layer, and the second The coated optical semiconductor element of the coating layer; step (4), which peels the coated optical semiconductor element from the temporary fixing sheet; and in the step (3), the first coating layer is interposed in the groove filled in the groove Between the second coating layer and the temporary fixing sheet.

According to the present invention, in the step (4), the covered optical semiconductor element can be surely peeled from the temporary fixing sheet.

1: Optical semiconductor element

2: The first phosphor layer (an example of the first coating layer)

3: slot

3': opening

4: 2nd coating layer

5: coated optical semiconductor element

6: Protective film

10: The first temporary fixing piece (an example of temporary fixing piece)

11: Temporary fixed layer

12: Support layer

16: Vacuum device

17: confined space

18: vacuum chamber

19: vacuum line

20: Vacuum pump

21: Vacuum valve

22: Atmospheric pipeline

23: Atmospheric valve

24: chamber space

27: Transfer sheet

29: 2nd covered element assembly

34: Space (chamber space)

35: Cutting machine

36: bottom

37: 1st transfer sheet (an example of temporary fixing sheet)

38: Second transfer sheet (an example of transfer sheet)

39: Vacuum dispenser

40: Nozzle

41: The first covered component assembly

43: Covering material

45: protrusion

46: recess

50: substrate

51: Light emitting device

52: Upper first phosphor layer

61: Adhesive layer

62: Support film

82: 1st coating layer

83: Upper first coating

84: Second phosphor layer (an example of the second coating layer)

h1: thickness

h2: thickness

L0: thickness

L1: thickness

L2: width

L3: interval

L4: thickness

L5: thickness

L6: width

L7: depth (distance)

L8: thickness (distance)

L9: thickness

P: pitch

Z: thickness

y: thickness

α : distance

β: width (length)

1A to 1E are manufacturing process diagrams of the first embodiment of the method for manufacturing a coated optical semiconductor element of the present invention, and FIG. 1A shows a step of disposing a plurality of optical semiconductor elements on a temporary fixing sheet 1B shows the step (1) of coating a plurality of optical semiconductor elements with the first phosphor layer, and FIG. 1C shows the step (2) of providing grooves in the first phosphor layer between the adjacent optical semiconductor elements. 1D represents the step (i) of arranging the protection sheet on the upper surface of the first phosphor layer, and FIG. 1E represents the step (ii) of arranging the temporary fixing sheet, the optical semiconductor element, the first phosphor layer and the protection sheet under vacuum, And the step (iii) of arranging the covering material to form a closed space.

FIGS. 2F to 2I are manufacturing step diagrams of the first embodiment of the manufacturing method of the coated optical semiconductor element of the present invention after FIG. 1E, FIG. 2F shows the step (iv) of flowing the coating material into the enclosed space, and FIG. 2G shows Step (v) of peeling the protective sheet, FIG. 2H shows the step of singulating the optical semiconductor element, and FIG. 2I shows the step (4) of transferring the coated optical semiconductor element to the transfer sheet.

FIGS. 3A to 3C are top views of steps in the first embodiment, FIG. 3A is a top view of step (i) corresponding to FIG. 1D, FIG. 3B is a top view of step (ii) corresponding to FIG. 1E, and FIG. 3C is The top view of step (iii) corresponding to FIG. 2F.

FIG. 4 shows a step of mounting the coated optical semiconductor element shown in FIG. 2I on the substrate.

FIGS. 5A to 5C are manufacturing step diagrams of a second embodiment of the method for manufacturing a coated optical semiconductor element of the present invention. FIG. 5A shows a step (1) of coating a plurality of optical semiconductor elements with a first phosphor layer, and FIG. 5B shows In the step (2) of setting a groove in the first phosphor layer between adjacent optical semiconductor elements, FIG. 5C shows the step of filling the groove with the second coating layer and covering the upper first phosphor layer ( 3).

6D and 6E are manufacturing step diagrams of a second embodiment of the method for manufacturing a coated optical semiconductor element of the present invention after FIG. 5C, FIG. 6D shows the step of singulating the optical semiconductor element, and FIG. 6E shows the coated light The step (4) of transferring the semiconductor element to the transfer sheet.

FIG. 7 shows a step of mounting the coated optical semiconductor element indicated by 6E on the substrate.

FIG. 8 shows a cross-sectional view of the coated optical semiconductor element obtained by the manufacturing method of the third embodiment.

9 is a cross-sectional view of a coated optical semiconductor element obtained by the manufacturing method of the fourth embodiment.

FIG. 10 shows a cross-sectional view of the coated optical semiconductor element obtained by the manufacturing method of the fifth embodiment.

FIG. 11 shows a cross-sectional view of the coated optical semiconductor element obtained by the manufacturing method of the sixth embodiment.

FIGS. 12A to 12D are manufacturing steps of the coated optical semiconductor device of Comparative Example 1. FIG. 12A shows the step of arranging the opening in the first phosphor layer (2), and FIG. 12B shows the step of arranging the second coating layer (3 ), FIG. 12C shows the step of cutting the second coating layer, and FIG. 12D shows the step (4) of transferring the coated optical semiconductor element to the transfer sheet.

13A to 13D are manufacturing steps of the coated optical semiconductor device of Comparative Example 2. FIG. 13A shows the step (2) of providing the opening in the first phosphor layer, and FIG. 13B shows the step of providing the second coating layer (3 ), FIG. 13C shows the step of cutting the second coating layer, and FIG. 13D shows the step (4) of transferring the coated optical semiconductor element to the transfer sheet.

14A to 14D are manufacturing steps of the coated optical semiconductor device of Comparative Example 3. FIG. 14A shows the step (2) of providing the opening in the first coating layer, and FIG. 14B shows the step of providing the second phosphor layer (3 ), FIG. 14C shows the step of cutting the second phosphor layer, and FIG. 14D shows the step (4) of transferring the coated optical semiconductor element to the transfer sheet.

15A to 15D are manufacturing steps of a seventh embodiment of the method for manufacturing a coated optical semiconductor element of the present invention. FIG. 15A shows the step of arranging a plurality of optical semiconductor elements on a temporary fixing sheet, and FIG. 15B shows the use of the first fluorescent screen. The step of coating a plurality of photo-semiconductor elements with a photo body layer (1), FIG. 15C shows the step of transferring the first cover element assembly to the first transfer sheet, and FIG. 15D shows the step of providing grooves in the first phosphor layer (2 ).

FIGS. 16E to 16G are manufacturing steps of the seventh embodiment of the method for manufacturing a coated optical semiconductor device of the present invention after FIG. 15D, and FIG. 16E shows the step (3) of filling the second coating layer into the groove. 16F shows the step of singulating the optical semiconductor element, and FIG. 16G shows the step of removing the upper end of the second coating layer 4.

FIG. 17 shows a step of mounting the coated optical semiconductor element shown in FIG. 16G on the substrate.

18A and 18B are manufacturing steps of the eighth embodiment of the method for manufacturing a coated optical semiconductor element of the present invention. FIG. 18A shows the step of transferring the coated optical semiconductor element to the second transfer sheet, and FIG. 18B shows the removal of 1 Steps at the bottom of the phosphor layer.

FIG. 19 shows a step of mounting the coated optical semiconductor element shown in FIG. 18B on the substrate.

In 1A to 2I, the up and down direction of the paper surface is the up and down direction (first direction, thickness direction), the upper side of the paper surface is the upper side (the first direction side, the thickness direction side), and the lower side of the paper surface is the lower side (the first direction is another One side, the other side in the thickness direction). The left-right direction of the paper is the left-right direction (the second direction orthogonal to the first direction), the left side of the paper is the left side (one side in the second direction), and the right side of the paper is the right side (the other side in the second direction). The paper thickness direction is the front-rear direction (the third direction orthogonal to the first direction and the second direction), the front side of the paper surface is the front side (the third direction side), and the back side of the paper surface is the rear side (the other side in the third direction). Specifically, it depends on the direction arrow of each figure.

<First Embodiment>

1. Manufacturing method of coated optical semiconductor element

The first embodiment of the method for manufacturing a coated optical semiconductor device of the present invention includes the following steps: Step (1), which is prepared on the upper surface of the first temporary fixing sheet 10 as an example of the temporary fixing sheet The plurality of optical semiconductor elements 1 that are temporarily fixed at intervals from each other, and the first layer that covers the plurality of optical semiconductor elements 1 in direct contact with the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1 1 The first phosphor layer 2 as an example of the coating layer (refer to FIGS. 1A and 1B); step (2), the first phosphor layer 2 between the adjacent optical semiconductor elements 1 is provided with a groove 3 that opens upward (Refer to FIG. 1C); Step (3), which fills the second coating layer 4 into the groove 3 to obtain the coated optical semiconductor element 5 including the optical semiconductor element 1, the first phosphor layer 2 and the second coating layer 4 (See FIGS. 1D to 2H); and step (4), which transfers the covered optical semiconductor element 5 from the first temporary fixing sheet 10 to the first transfer sheet 27 (see FIG. 2I).

Hereinafter, each step will be described in order.

1-1. Step (1)

As shown in FIGS. 1A and 1B, in step (1), a plurality of optical semiconductor elements 1 and a first phosphor layer 2 are prepared. That is, a plurality of optical semiconductor elements 1 to be temporarily fixed on the upper surface of the first temporary fixing sheet 10 are spaced apart from each other, and the first phosphor layer 2 and the first temporary fixing exposed from the plurality of optical semiconductor elements 1 The first phosphor layer 2 of a plurality of optical semiconductor elements 1 is coated with the upper surface of the sheet 10 in direct contact.

More specifically, as shown in FIG. 1A, in step (1), first, a plurality of optical semiconductor elements 1 are temporarily fixed at intervals on the upper surface of the first temporary fixing sheet 10.

The optical semiconductor element 1 is an optical semiconductor element that converts electrical energy into optical energy. Optical semiconductor elements do not include rectifiers such as transistors in technical fields different from optical semiconductor elements. The optical semiconductor element 1 has, for example, a substantially rectangular shape in cross-section and a substantially rectangular shape in plan view whose thickness (the maximum length in the vertical direction) is shorter than the length in the plane direction (specifically, the length in the left-right direction and the length in the front-back direction). A part of the lower surface of the optical semiconductor element 1 is formed by bumps (not shown). The bumps are configured to be electrically connected to terminals (not shown in FIG. 4) provided on the upper surface of the substrate 50 (refer to FIG. 4, described below).

Specific examples of the optical semiconductor element 1 include blue LEDs (light emitting diode elements) that emit blue light.

The thickness (length in the vertical direction) L1 of the optical semiconductor element 1 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 1000 μm or less, preferably 500 μm or less. The width (length in the left-right direction and length in the front-back direction) L2 of the optical semiconductor element 1 is, for example, 0.1 μm or more, preferably 0.2 μm or more, and for example, 5000 μm or less, preferably 2000 μm or less.

The first temporary fixing sheet 10 is used to temporarily fix a plurality of optical semiconductor elements 1, and thereafter, the plurality of optical semiconductor elements 1 are collectively covered and sealed by the first phosphor layer 2, and thereafter, the first The phosphor layer 2 forms a support member of the groove 3.

The first temporary fixing sheet 10 includes a temporary fixing layer 11 and a support layer 12.

The temporary fixing layer 11 is provided on the temporary fixing layer 11 in order to temporarily fix the plurality of optical semiconductor elements 1. The temporary fixing layer 11 has an adhesive layer. The adhesive layer is formed in a substantially flat plate shape extending in the left-right direction and the front-rear direction using an adhesive, for example. As the adhesive agent, for example, an adhesive agent whose adhesive force is reduced by treatment (specifically, irradiation of active energy rays, etc.) may be mentioned. In addition, the temporary fixing layer 11 may have an adhesive layer and a substrate (not shown) provided on the lower surface of the adhesive layer. Furthermore, the temporary fixing layer 11 may have two adhesive layers and a substrate (not shown) interposed therebetween. Furthermore, the thickness of the temporary fixing layer 11 is, for example, 5 μm or more, preferably 10 μm or more, and for example, 200 μm or less, preferably 150 μm or less.

The support layer 12 is provided on the lower surface of the temporary fixing layer 11 in order to support the temporary fixing layer 11. Examples of the support layer 12 include polymer films such as polyethylene films and polyester films (PET (Polyethylene Terephthalate)), such as ceramic sheets, and metal foils. A polymer film can be preferably cited. The thickness of the support layer 12 is, for example, 1 μm or more, preferably 10 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

Then, a plurality of optical semiconductor elements 1 are temporarily spaced apart from each other on the upper surface of the first temporary fixing sheet 10. Specifically, on the upper surface of the temporary fixing layer 11, a plurality of light The semiconductor elements 1 are arranged neatly at intervals in the left-right direction and the front-back direction. More specifically, the lower surface of the plurality of optical semiconductor elements 1 is brought into contact with the upper surface of the temporary fixing layer 11 of the first temporary fixing sheet 10.

The interval L3 between the adjacent optical semiconductor elements 1 is, for example, 0.1 mm or more, preferably 0.3 mm or more, and for example, 3 mm or less, preferably 2 mm or less. The distance P between the plurality of optical semiconductor elements 1, that is, the sum P (=L2+L3) of the width L2 of one optical semiconductor element 1 and the interval L3 between one optical semiconductor element 1 and the adjacent optical semiconductor element 1 is, for example, 0.3 mm or more, preferably 0.5 mm or more, and, for example, 5 mm or less, preferably 3 mm or less.

As shown in FIG. 1B, after that, the first phosphor layer 2 is coated with the first phosphor layer 2 so as to directly contact the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1 Optical semiconductor element 1.

When covering a plurality of optical semiconductor elements 1 with the first phosphor layer 2, first, the first phosphor layer 2 is prepared.

The first phosphor layer 2 has a size including a plurality of optical semiconductor elements 1 in a plan view, and has a substantially rectangular flat plate shape. The first phosphor layer 2 is a wavelength conversion layer that converts a part of blue light emitted from the optical semiconductor element 1 into, for example, yellow light, red light, green light, and the like. The first phosphor layer 2 contains a phosphor resin composition.

The phosphor resin composition contains a phosphor and a transparent resin composition.

Examples of phosphors include yellow phosphors that can convert blue light into yellow light, red phosphors that can convert blue light into red light, and green phosphors that can convert blue light into green light. Wait.

Examples of yellow phosphors include: (Ba, Sr, Ca) ₂ SiO ₄ ; Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)) and other silicate phosphors , For example, Y ₃ Al ₅ O ₁₂ : Ce (YAG (YAG (Yttrium Aluminum Garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (Tall Aluminum Garnet): Ce) and other garnets with garnet crystal structure Stone-type phosphors, for example, oxynitride phosphors such as Ca- α- SiAlON.

Examples of red phosphors include nitride phosphors such as CaAlSiN ₃ :Eu and CaSiN ₂ :Eu.

Examples of green phosphors include garnet phosphors such as Lu ₃ Al ₅ O ₁₂ :Ce (LuAG: ruthenium aluminum garnet).

Among such phosphors, yellow phosphors alone or a combination of red phosphors and green phosphors can be preferably exemplified.

Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. From the viewpoint of fluidity, a spherical shape can be preferably cited.

The average value of the maximum length of the phosphor (the average particle diameter in the case of a sphere) is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 200 μm or less, preferably 100 μm or less.

The mixing ratio of the phosphor is, relative to 100 parts by mass of the transparent resin composition, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example 80 parts by mass or less, and preferably 50 parts by mass or less. The ratio of the phosphor to the phosphor resin composition is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, for example, 90% by mass or less, and preferably 80% by mass or less.

Examples of the transparent resin composition include a transparent resin composition used as a sealing material for sealing the optical semiconductor element 1. Specifically, examples of the transparent resin composition include a thermosetting resin composition and a thermoplastic resin composition, and preferably a thermosetting resin composition.

Examples of the thermosetting resin composition include a two-stage reaction curable resin composition and a one-stage reaction curable resin composition.

The two-stage reaction-curable resin composition has two reaction mechanisms, and can be B-staged (semi-hardened) from the A-stage state in the first-stage reaction, and then, from the B-stage state in the second-stage reaction The state is C-staged (completely hardened). That is, the two-stage reaction-curable resin composition can be a thermosetting resin composition in a B-stage state under moderate heating conditions. Among them, the two-stage reaction-curable resin composition can also be heated to a C-stage state without maintaining the B-stage state from the A-stage state by heating with strength. Furthermore, the B-stage state is a state between the liquid A-stage state and the fully-hardened C-stage state of the thermosetting resin composition, and is slightly cured and gelled, and the compression elastic modulus is less than the C-stage state The semi-solid or solid state of the elastic modulus.

The one-stage reaction-curable resin composition has one reaction mechanism, and in the first-stage reaction, the C-stage (complete curing) can be carried out from the A-stage state. Furthermore, the first-stage reaction-curable resin composition includes a thermosetting resin composition that can stop the reaction in the middle of the reaction in the first stage, and changes from the A-stage state to the B-stage state, and by the subsequent After further heating, the reaction in the first stage is restarted, and the C-stage (complete hardening) is performed from the B-stage state. That is, the thermosetting resin composition can be a thermosetting resin composition in a B-stage state. On the other hand, the one-stage reaction-curable resin composition includes a thermosetting resin composition that cannot be controlled in such a way as to stop in the middle of the one-stage reaction, that is, it cannot be in the B-stage state, and it is once from the A-stage state Perform C-stage (complete hardening).

Examples of the transparent resin composition include silicone resins, epoxy resins, urethane resins, polyimide resins, phenol resins, urea resins, melamine resins, and unsaturated polyester resins. As the transparent resin composition, preferably, silicone resin is used.

The above-mentioned transparent resin composition may be any one kind or plural kinds.

As the silicone resin, from the viewpoint of transparency, durability, heat resistance, and light resistance, for example, an addition reaction hardening type silicone resin composition, condensation, and addition reaction hardening type silicone resin can be cited. Silicone resin composition such as composition. Polysiloxane resin can be used alone or in combination.

The addition reaction hardening type polysiloxane resin composition is a one-stage reaction hardening resin composition, for example, containing an alkenyl group-containing polysiloxane, a hydrogen silane group-containing polysiloxane, and a hydrosilation catalyst.

Specifically, for example, examples of the addition reaction-curable silicone resin composition include a phenyl-based silicone resin composition as a one-stage reaction-curable resin composition that can be in the B-stage state, for example, as A methyl silicone resin composition that cannot be a one-stage reaction-curable resin composition in the B-stage state. Preferable examples include phenyl-based silicone resin compositions.

The addition reaction hardening type silicone resin composition includes, for example, the addition reaction hardening type silicone resin composition described in Japanese Patent Laid-Open No. 2015-073084.

The condensation and addition reaction-curable polysiloxane resin composition is a two-stage reaction-curable resin, and specific examples thereof include Japanese Patent Laid-Open No. 2010-265436, Japanese Patent Laid-Open No. 2013-187227, etc. The described first to eighth condensation and addition reaction curing polysiloxane resin compositions, for example, Japanese Patent Laid-Open No. 2013-091705, Japanese Patent Laid-Open No. 2013-001815, Japanese Patent Laid-Open No. 2013-001814 Cage-type eight-silsesquioxane-containing polysiloxane resin compositions and the like described in Japanese Patent Publication No. 2013-001813, Japanese Patent Publication No. 2012-102167, and the like.

In addition, the addition reaction hardening type silicone resin composition and the condensation and addition reaction hardening type silicone resin composition are solid and have both thermoplasticity and thermosetting properties.

Furthermore, in the phosphor resin composition, pigments (including fillers), silane coupling agents, anti-aging agents, modifiers, surfactants, dyes, anti-tarnish agents, ultraviolet absorbers may be added in appropriate ratios as needed And other well-known additives.

Furthermore, the first phosphor layer 2 can be supported and protected by a release sheet (not shown).

Regarding the release sheet not shown, until the optical semiconductor element 1 is sealed with the first phosphor layer 2, in order to protect the first phosphor layer 2, it is bonded to the first phosphor layer 2 in a peelable manner The back side (upper surface in FIG. 1A). Examples of the release sheet (not shown) include polymer films such as polyethylene films and polyester films (PET, etc.), for example, ceramic sheets, and metal foils. A polymer film can be preferably cited. The thickness of the release sheet (not shown) is, for example, 1 μm or more, preferably 10 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

In the case where the first phosphor layer 2 contains a phenyl-based polysiloxane resin composition (one-stage reaction-curable resin composition (addition reaction-curable polysiloxane resin composition)), the alkenyl group and the hydrosilyl group The hydrosilation reaction proceeded to the middle and was temporarily stopped.

The thickness L0 of the first phosphor layer 2 before coating the optical semiconductor element 1 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

After that, the first phosphor layer 2 is pressed against the plurality of optical semiconductor elements 1 and the first temporary fixing sheet 10. It is preferable that the first phosphor layer 2 is thermocompression-bonded (hot-pressed) to the release sheet that supports a plurality of optical semiconductor elements 1.

Specifically, first, the first phosphor layer 2, the plurality of optical semiconductor elements 1, and the first temporary fixing sheet 10 are installed in a flat plate press or the like provided with a heat source. Although not shown, the flat plate press is provided with a mold having a flat upper surface underneath, and a mold having a flat upper surface and arranged oppositely on the upper side of the lower mold.

Then, using a flat plate press, the first phosphor layer 2, the plurality of optical semiconductor elements 1, and the first temporary fixing sheet 10 are hot pressed.

The temperature of the flat plate press is the thermoplastic temperature of the addition reaction hardening type silicone resin composition or above when the first phosphor layer 2 contains the addition reaction hardening type silicone resin composition, From the viewpoint of performing the thermoplastic and thermosetting of the addition reaction hardening type silicone resin composition at one time, the thermosetting temperature or higher is preferred, and specifically, for example, 60°C or higher, preferably 80°C The above is, for example, 150°C or lower, preferably 120°C or lower.

The pressurizing time is, for example, 1 minute or more, preferably 5 minutes or more, and, for example, 60 minutes or less, preferably 20 minutes or less.

By the above hot pressing, when the first phosphor layer 2 contains a phenyl-based polysiloxane resin composition having thermoplasticity and thermosetting properties, the first phosphor layer 2 is plasticized. Then, a plurality of optical semiconductor elements 1 are buried using the plasticized first phosphor layer 2.

At this time, as shown in FIG. 1B, the first phosphor layer 2 directly contacts the upper surface of the temporary fixing layer 11 exposed from the plurality of optical semiconductor elements 1. That is, the first phosphor layer 2 is in direct contact with the upper surface and side surfaces of the optical semiconductor element 1 and the upper surface of the temporary fixing layer 11 exposed from the temporary fixing layer 11.

Thereby, as shown in FIG. 1B, a plurality of optical semiconductor elements 1 are sealed with one first phosphor layer 2.

Thereby, in the state of being temporarily fixed to the first temporary fixing sheet 10, the first covering element assembly 41 including the plurality of optical semiconductor elements 1 and the first phosphor layer 2 is obtained.

As shown in FIG. 1B, in the first coated element assembly 41, the upper surface of the first phosphor layer 2 has a flat surface along the plane direction.

In the first coated element assembly 41, the lower surfaces of the plurality of optical semiconductor elements 1 directly contact (temporarily fix) the upper surface of the temporary fixing sheet 10.

The thickness L4 of the first phosphor layer 2 (the upper first phosphor layer 52) located on the upper side of the optical semiconductor element 1 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 1000 μm or less, preferably 500 μm or less, More preferably, it is 300 μm or less. The thickness L5 of the first phosphor layer 2 between the adjacent optical semiconductor elements 1 is, for example, 15 μm or more, preferably 50 μm or more, and for example, 2000 μm or less, preferably 1500 μm or less.

1-2. Step (2)

As shown in FIG. 1C, in the step (2), the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with a groove 3 that opens upward.

The groove 3 has a substantially checkerboard shape (substantially cross-shaped) in plan view to separate the plurality of optical semiconductor elements 1.

Specifically, the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is half-cut using a cutting device such as a dicing machine 35. That is, the upper end portion of the first phosphor layer 2 and the middle portion in the vertical direction located in the center between the adjacent optical semiconductor elements 1 are cut. That is, the lower end portion of the first phosphor layer 2 between adjacent optical semiconductor elements 1 is not cut and left.

In detail, the cutting device is made to enter the upper surface of the first phosphor layer 2 from the upper side of the first phosphor layer 2, and then the cutting is completed before the cutting device reaches the lower surface of the first phosphor layer 2 (provisional off Before stopping).

As a result, the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with a groove 3 that opens upward.

Further, by providing the groove 3, the bottom 36 is provided on the first phosphor layer 2. The bottom portion 36 is a protruding portion that protrudes outward in the plane direction from the portion of the first phosphor layer 2 that covers the side surface of the optical semiconductor element 1. The upper surface of the bottom portion 36 is held in such a manner that the portion of the first phosphor layer 2 that covers the upper surface of the optical semiconductor element 1 is lowered by one step. Therefore, the upper surface of the bottom portion 36 and the upper surface of the above portion There is a step difference between them.

The width L6 of the groove 3 is set according to the thickness of the cutter 35, and specifically, for example, 10 μm or more, preferably 15 μm or more, and, for example, 1000 μm or less, preferably 500 μm or less.

The depth L7 of the groove 3 is, for example, 50 μm or more, preferably 75 μm or more, more preferably 100 μm or more, and for example, 2000 μm or less.

The thickness L8 of the bottom 36 (distance between the upper surface of the temporary fixing layer 11 and the upper surface of the bottom 36) is, for example, 5 μm or more, preferably 10 μm or more, more preferably 25 μm or more, and for example, 200 μm or less, preferably 75 μm the following. If the thickness L8 of the bottom 36 is more than the above lower limit, it is allowed The precision of the depth into the first phosphor layer 2 by a cutting device (specifically, a cutter 35 or the like) is set to be large, for example, at least about 10 μm.

If the thickness L8 of the bottom portion 36 is equal to or less than the above upper limit, light leakage to the side can be suppressed, and the brightness upward (front brightness) can be improved.

The distance α between the inner side surface of the groove 3 and the side surface of the optical semiconductor element 1 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

1-3. Step (3)

As shown in FIGS. 1D to 2H, in step (3), the second coating layer 4 is filled into the groove 3.

The method for filling the second coating layer 4 into the groove 3 includes, for example, the following steps: step (i), which arranges the protective sheet 6 on the upper surface of the first phosphor layer 2 (refer to FIG. 1D); step (ii), It arranges the first temporary fixing sheet 10, the optical semiconductor element 1, the first phosphor layer 2 and the protective sheet 6 under vacuum (see FIG. 1E); step (iii), which surrounds the first covering element assembly 41 Method, the covering material 43 is brought into contact with the first temporary fixing sheet 10 and the protective sheet 6 to form a sealed space 17 (see FIG. 1E); step (iv), which causes the covering material 43 to flow into the sealed space 17 (see FIG. 2F ); and step (v), which peels off the protective sheet 6 (refer to FIG. 2G). Step (i) ~ step (v) are implemented in order.

1-3-1. Step (i)

As shown in FIGS. 1D and 3A, in step (i), the protective sheet 6 is arranged on the upper surface of the upper first phosphor layer 52. At this time, the protective sheet 6 is arranged so as to close the upper end of the groove 3 but not fill the groove 3.

The protective sheet 6 has a substantially rectangular flat plate shape including the first covering element assembly 41 when projected in the thickness direction. In addition, the protective sheet 6 has a substantially rectangular flat plate shape included in the first temporary fixing sheet 10 when projected in the thickness direction. Specifically, the protective sheet 6 has a size larger than that of the first covering element assembly 41 and has a size smaller than that of the first temporary fixing sheet 10.

The protective sheet 6 is used in the following step (iii) (refer to FIG. 2F and FIG. 3C) to prevent the covering material 43 from covering the upper surface of the upper first phosphor layer 52 and the upper first phosphor layer 52 Sheets exposed on the surface. The protective sheet 6 is an adhesive sheet that can be peeled off to cover the optical semiconductor element 5.

The protective sheet 6 includes an adhesive layer 61 and a support sheet 62 that supports the adhesive layer 61.

The adhesive layer 61 is formed into a substantially flat plate shape with an adhesive, for example.

As the adhesive, for example, an adhesive whose adhesive force is reduced by treatment (specifically, irradiation of active energy rays, etc.) may be mentioned.

Examples of such an adhesive include a resin composition into which a carbon-carbon double bond is introduced. The resin composition may include a polymer having a carbon-carbon double bond.

Such a polymer is prepared by the following method, for example.

That is, for example, the monomer component containing the main vinyl monomer and the secondary vinyl monomer having the first functional group is copolymerized in such a way that the first functional group does not disappear, thereby preparing a precursor having the first functional group polymer. In addition, a compound having a carbon-carbon double bond and a second functional group that can react with the first functional group is prepared. Thereafter, the compound is formulated into the precursor polymer, and the first functional group and the second functional group are reacted.

Examples of the combination of the first functional group and the second functional group include a combination of a hydroxyl group and an isocyanate group. The first functional group preferably includes a hydroxyl group. As the second functional group, an isocyanate group is preferably exemplified.

Examples of the main monomers include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, and n-butyl (meth)acrylate. , Isobutyl (meth)acrylate, second butyl (meth)acrylate, amyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, (meth)acrylic acid Heptyl ester, 2-ethylhexyl (meth)acrylate (2EHA/2EHMA), octyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, (meth)acrylic acid Isononyl ester, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, (meth)acrylic acid Dodecyl acid, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, cetyl (meth)acrylate , Carbon of alkyl part such as (heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, eicosyl (meth) acrylate, etc. The number of alkyl (meth)acrylates is 1-20. Preferably, 2-ethylhexyl acrylate (2EHA) is mentioned. These can be used alone or in combination. The mixing ratio of the main monomer in the monomer component is, for example, 70% by mass or more, preferably 90% by mass or more, and, for example, 99% by mass or less.

The vinyl monomer of the secondary vinyl monomer system can be copolymerized with the main vinyl monomer. Examples of secondary vinyl monomers include carboxyl group-containing monomers, epoxy group-containing monomers, hydroxyl group-containing monomers, isocyanate group-containing monomers, and the like, and preferably hydroxyl group-containing monomers.

Examples of hydroxyl group-containing monomers include 2-hydroxyethyl (meth)acrylate (2-HEA/HEMA), 2-hydroxypropyl (meth)acrylate, and 3-hydroxypropyl (meth)acrylate. , 2-Hydroxybutyl (meth)acrylate and other hydroxyalkyl (meth)acrylate and so on. Preferably, 2-hydroxyethyl acrylate (2-HEA) is mentioned. These can be used alone or in combination. The blending ratio of the sub-vinyl monomer in the monomer component is, for example, 30% by mass or less, and, for example, 1% by mass or more.

Examples of the compound include compounds containing isocyanate groups, and specific examples include (meth)acryloyl isocyanate, 2-(meth)acryloyloxyethyl isocyanate, and meta-isopropenyl-α,α- Vinyl monomers containing isocyanate groups such as dimethylbenzyl isocyanate. Preferably, methacryloyloxyethyl isocyanate can be mentioned.

The compounding ratio of the compound is such that the amount of double bonds introduced into the polymer is, for example, 0.01 millimoles/g or more, preferably 0.2 millimoles/g or more. In addition, for example, it is adjusted to 10.0 millimoles/g or less, preferably 5.0 millimoles/g or less.

When preparing the precursor polymer, the above monomer component is subjected to, for example, solution polymerization in the above ratio in the presence of a polymerization initiator.

Examples of the polymerization initiator include peroxides, persulfates, and redox-based initiators. These can be used alone or in combination. Peroxide can be preferably cited. Examples of peroxides include diacyl peroxide, peroxyesters, peroxydicarbonates, monoperoxycarbonates, peroxyketals, dialkyl peroxides, hydrogen peroxide, and ketone peroxides. Diacetyl peroxide can be preferably cited.

Examples of diacyl peroxide include: dibenzoyl peroxide (BPO), di-p-nitrobenzoyl peroxide, di-p-chlorobenzoyl peroxide, and di(3,5,5-trioxide Methylhexyl), di-n-octyl peroxide, didecyl peroxide, dilaurel peroxide, etc. Preferably, dibenzoyl peroxide (BPO) is cited.

The mixing ratio of the polymerization initiator with respect to 100 parts by mass of the monomer component is, for example, 0.005 parts by mass or more, for example, 1 part by mass or less.

In addition, for the solution polymerization, a polymerization solvent can be used. Examples of the polymerization solvent include aromatic hydrocarbons such as toluene and xylene, and aliphatic hydrocarbons such as hexane. Aromatic hydrocarbons can be preferably cited.

Then, in such a way that the first functional group of the secondary vinyl monomer does not disappear, the monomer component containing the main vinyl monomer and the secondary vinyl monomer is copolymerized to prepare a precursor polymer having the first functional group .

Then, the aforementioned compound was blended into the precursor polymer. Preferably, a compound containing an isocyanate group is blended with the hydroxyl group-containing precursor polymer to react the hydroxyl group with the isocyanate group to form an urethane bond. Then, the carbon-carbon double bond of the compound is introduced into the obtained polymer.

Thereafter, a photopolymerization initiator is blended in the polymer.

The photopolymerization initiator is the following photopolymerization catalyst: used in the following step (v) (refer to FIG. 2G), when the active energy ray is irradiated to the adhesive layer 61, free radicals are generated to be introduced into the resin composition The carbon-carbon double bonds in them react with each other. The 10-hour half-life temperature of the photopolymerization initiator is, for example, 20°C or higher, preferably 50°C or higher, and, for example, 107°C or lower, preferably 100°C or lower.

口星系光聚合起始劑等。該等可單獨使用或併用。可較佳地列舉9-氧硫

口星系光聚合起始劑。作為9-氧硫

口星系光聚合起始劑，例如可列舉：1-[4-_2-羥基乙氧基-苯基]-2-羥基-2-甲基-1-丙烷-1-酮、2-羥基-1-{4-[4-_2-羥基-2-甲基-丙醯基-苄基]苯基}-2-甲基-丙烷-1-酮。可較佳地列舉2-羥基-1-{4-[4-_2-羥基-2-甲基-丙醯基-苄基]苯基}-2-甲基-丙烷-1-酮。 Examples of the photopolymerization initiator include ketal-based photopolymerization initiators, acetophenone-based photopolymerization initiators, benzoin ether-based photopolymerization initiators, and acetylphosphine oxide-based photopolymerization initiators. α -Ketanol-based photopolymerization initiator, aromatic sulfonyl chloride-based photopolymerization initiator, photoactive oxime-based photopolymerization initiator, benzoin-based photopolymerization initiator, benzyl-based photopolymerization initiator 、 Benzophenone series photopolymerization initiator, 9-oxygen sulfide

Mouth galaxy photopolymerization initiator and so on. These can be used alone or in combination. 9-oxysulfur can be preferably cited

Mouth galaxy photopolymerization initiator. As 9-oxygen sulfur

Mouth star photopolymerization initiators include, for example, 1-[4-_2-hydroxyethoxy-phenyl]-2-hydroxy-2-methyl-1-propane-1-one, 2-hydroxy-1 -{4-[4-_2-hydroxy-2-methyl-propionyl-benzyl]phenyl}-2-methyl-propane-1-one. Preferably, 2-hydroxy-1-{4-[4-_2-hydroxy-2-methyl-propionyl-benzyl]phenyl}-2-methyl-propane-1-one is mentioned.

The compounding ratio of the photopolymerization initiator is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, and, for example, 10 parts by mass or less, preferably 5 parts by mass or less with respect to 100 parts by mass of the polymer.

唑啉系交聯劑、氮丙啶系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑、脲系交聯劑、金屬烷氧化物系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二醯亞胺系交聯劑、胺系交聯劑等。可較佳地列舉異氰酸酯系交聯劑。 In addition, additives such as crosslinking agents can be blended in the polymer at an appropriate ratio. Examples of the crosslinking agent include isocyanate-based crosslinking agents, epoxy-based crosslinking agents,

Zoline-based crosslinking agent, aziridine-based crosslinking agent, melamine-based crosslinking agent, peroxide-based crosslinking agent, urea-based crosslinking agent, metal alkoxide-based crosslinking agent, metal chelate-based crosslinking agent Linking agent, metal salt-based crosslinking agent, carbodiimide-based crosslinking agent, amine-based crosslinking agent, etc. Preferably, an isocyanate-based crosslinking agent is used.

When the adhesive layer 61 is formed, an adhesive is applied to the surface of the support sheet 62, and then dried.

Examples of the support sheet 62 include polymer films such as polyethylene films and polyester films (PET, etc.), for example, ceramic sheets, and metal foils. The thickness of the support sheet 62 is, for example, 80 μm or more, preferably 110 μm or more, and for example, 300 μm or less, preferably 250 μm or less.

The drying temperature is, for example, 40°C or higher, preferably 60°C or higher, and for example, 150°C or lower, preferably 130°C or lower. The drying temperature is, for example, 5 minutes or less.

Thereafter, the adhesive is aged as necessary. The aging temperature is, for example, 25°C or higher, preferably 40°C or higher, and for example, 70°C or lower, preferably 60°C or lower. The aging time is, for example, 10 hours or more, and for example, 120 hours or less.

Accordingly, the adhesive layer 61 is formed on the surface of the support sheet 62.

The thickness of the adhesive layer 61 is, for example, 10 μm or more, preferably 20 μm or more, and for example, 250 μm or less, preferably 100 μm or less.

Thereby, the protective sheet 6 having the adhesive layer 61 and the support sheet 62 disposed on the upper surface of the adhesive layer 61 is obtained.

In step (iii) shown in FIGS. 2F and 3C, the protective sheet 6 has rigidity and toughness to the extent that it does not substantially deform. Specifically, the tensile elastic modulus of the protective sheet 6 at 25° C. is, for example, 250 MPa or more, preferably 500 MPa or more, more preferably 1000 MPa or more, and for example, 20,000 MPa or less.

Thereafter, the protective sheet 6 is bonded to the first coated element assembly 41. Specifically, the adhesive layer 61 is bonded to the upper surface of the upper first phosphor layer 52. With this, the protective sheet 6 is adhered to protect (cover) the upper surface of the upper first phosphor layer 52.

On the other hand, the bottom surface of the groove 3 (the upper surface of the bottom 36) and the lower surface of the protective sheet 6 are spaced apart in the thickness direction. The distance L7 between the bottom surface of the groove 3 and the lower surface of the protective sheet 6 is the same as the depth L7 of the groove 3.

1-3-2. Step (ii)

As shown in FIG. 1E, in step (ii), the first coated element assembly 41, the first temporary fixing sheet 10 and the protective sheet 6 are placed under vacuum. For example, the first covering element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6 are arranged in the vacuum device 16.

The vacuum device 16 includes a vacuum chamber 18, a vacuum line 19, a vacuum pump 20, a vacuum valve 21, an atmospheric line 22, an atmospheric valve 23, and a platform (not shown).

The vacuum chamber 18 is a sealed container that can house the first coated element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6.

One end of the vacuum line 19 (upstream side end in the suction direction) is connected to the vacuum chamber 18, and the other end of the vacuum line 19 (downstream side end in the suction direction) is connected to the vacuum pump 20.

The vacuum pump 20 is configured to communicate with the space in the vacuum chamber 18 via the vacuum line 19.

The vacuum valve 21 is interposed in the vacuum line 19.

The atmospheric line 22 is a line that branches in the middle of the vacuum line 19, specifically, the vacuum line 19 from a part between the vacuum chamber 18 and the vacuum valve 21, and is configured such that one end is open to the atmosphere.

The atmospheric valve 23 is interposed in the atmospheric pipeline 22.

The platform not shown is accommodated in the vacuum chamber 18 and has a substantially plate shape. In addition, the platform has a fixing member such as a suction mechanism, whereby the lower surface of the first temporary fixing piece 10 is sucked (fixed).

Then, the first covered element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6 are arranged in the vacuum chamber 18, and the air pressure of the vacuum chamber 18 is set to a vacuum pressure.

Specifically, first, the vacuum valve 21 and the atmospheric valve 23 are opened. With this, the vacuum pump 20 communicates with the atmospheric line 22. In this state, the vacuum pump 20 is activated. Thereafter, the first covering element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6 are installed in the vacuum chamber 18 in such a manner that the first temporary fixing sheet 10 is fixed to a platform (not shown). , The space (chamber space) 34 in the vacuum chamber 18 is sealed.

Thereafter, the atmospheric valve 23 is closed. With this, the vacuum pump 20 communicates with the chamber space 24 via the vacuum valve 21. In this way, the air pressure in the chamber space 24 becomes a vacuum. Specifically, the air pressure (vacuum pressure) of the chamber space 24 is, for example, 1.0×10-2 MPa or less, preferably 1.0×10-3 MPa or less from the viewpoint of smoothly flowing the covering material 43 into the sealed space 17 In addition, from the viewpoint of more effectively suppressing the generation of voids in the first phosphor layer 2, it is, for example, 5.5×10-4 MPa or more.

1-3-3. Step (iii)

As shown in FIGS. 2F and 3C, in step (iii), the covering material 43 is brought into contact with the first temporary fixing sheet 10 and the protective sheet 6 so as to surround the first covering element assembly 41 to form a seal Space 17.

The coating material 43 contains a coating composition having fluidity at normal temperature (25°C).

The coating composition contains, for example, a light-reflecting component and/or a light-absorbing component and a resin.

Examples of the light-reflective component include one type of oxide selected from the group consisting of Ti, Zr, Nb, and Al, and particles (light-reflective particles) such as AlN and/or MgF. Specifically, the light reflective component is at least one selected from the group consisting of TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ . From the viewpoint of ensuring high light reflectivity, TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ can be preferably cited, and TiO ₂ can be more preferably cited.

The average particle diameter of the light-reflective particles is, for example, 0.1 μm or more, preferably 0.15 μm or more, and for example, 80 μm or less, preferably 50 μm or less.

The mixing ratio of the light-reflective component with respect to the coating composition is, for example, 5% by mass or more, and preferably 70% by mass or less. The blending ratio of the light-reflective component to 100 parts by mass of the resin is, for example, 3 parts by mass or more, preferably 5 parts by mass or more, and, for example, 50 parts by mass or less, preferably 40 parts by mass or less.

Examples of the light absorbing component include pigments and dyes, and from the viewpoint of light absorbability, light absorbing particles such as carbon black are preferably exemplified. The average particle diameter of the light-absorbing particles is, for example, 10 nm or more, preferably 15 nm or more, and for example, 100 nm or less, preferably 50 nm or less.

The mixing ratio of the light-absorbing component with respect to the coating composition is, for example, 0.1% by mass or more, for example, 10% by mass or less. The blending ratio of the light-absorbing component to 100 parts by mass of the resin is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, and for example, 30 parts by mass or less, preferably 25 parts by mass or less.

Examples of the resin include curable resins such as thermoplastic resins such as thermosetting resins and active energy ray curable resins, preferably curable resins, and more preferably, from the viewpoint of heat resistance, A good example is a thermosetting resin.

Examples of thermosetting resins include silicone resins, epoxy resins, and acrylic resins. From the viewpoint of light resistance, a silicone resin can be preferably cited. Examples of the polysiloxane resin include the methyl-based polysiloxane resin composition disclosed in Japanese Patent Laid-Open No. 2015-073084.

The mixing ratio of the resin with respect to the coating composition is, for example, 20% by mass or more, preferably 30% by mass or more, and, for example, 95% by mass or less, preferably 90% by mass or less.

In addition, the coating composition can contain an inorganic filler such as silica or glass at an appropriate ratio. Furthermore, for the coating composition, for example, metal materials such as Ag and Cu, diamond, AlN, and the like can be blended at an appropriate ratio.

On the other hand, in the first embodiment, the coating composition does not contain phosphor.

When preparing the coating composition, the above components are blended at the above ratio and mixed.

The viscosity of the coating composition at normal temperature (25°C) is, for example, 1 Pa‧s or more, preferably 2 Pa‧s or more, and for example, 50 Pa‧s or less, preferably 40 Pa‧s or less. The viscosity of the coating composition was measured using an E-type viscometer.

If the viscosity of the coating composition is greater than or equal to the above lower limit, precipitation of light-reflective components and/or light-absorbing components can be suppressed. If the viscosity of the coating composition is equal to or lower than the above upper limit, the generation of voids in the first phosphor layer 2 can be suppressed.

When the covering material 43 is brought into contact with the first temporary fixing sheet 10 and the protective sheet 6 so as to surround the first covering element assembly 41, for example, a vacuum injection device (vacuum dispenser) 39, vacuum printer, drawing A coating device such as an apparatus applies the coating material 43 between the lower surface of the peripheral edge of the protective sheet 6 and the upper surface of the first temporary fixing sheet 10 opposed thereto. Preferably use a vacuum dispenser 39 Cloth covering material 43. The vacuum dispenser 39 includes a nozzle 40 extending in the up-down direction and decreasing in cross-sectional area as it goes downward, and a tank (not shown) connected to the nozzle 40.

Furthermore, the coating device is incorporated in the vacuum device 16 in advance, and is specifically provided in the vacuum chamber 18. As shown in FIGS. 1D and 3B (hatched), the covering material 43 is applied around the area where the first covering element assembly 41 is arranged so as to have a substantially rectangular frame (frame) shape in plan view. 43. The frame (frame) shape of the covering material 43 is a continuous shape that is not interrupted halfway along the circumferential direction of the protective sheet 6.

In addition, the covering material 43 has a cross-sectional shape that rises upward from the upper surface of the support layer 12.

The coating amount of the coating material 43 is set to be the same as or larger than the volume of the sealed space 17 described below. Specifically, on a volume basis, the volume relative to the sealed space 17 is, for example, 100% or more. It is preferably 110% or more, more preferably 120% or more, and for example, 200% or less.

The sealed space 17 is formed by the space sealed by the covering material 43.

The sealed space 17 is a space including the groove 3, and is a space defined by the covering material 43, the protective sheet 6, the first temporary fixing sheet 10, and the first phosphor layer 2 (first covering element assembly 41).

The air pressure in the enclosed space 17 is the same as the above air pressure in the chamber space 24.

1-3-4. Step (iv)

In step (iv), as shown in FIG. 2F, the air pressure of the chamber space 24 (the chamber space 24 outside the sealed space 17) is set to atmospheric pressure.

Specifically, first, the vacuum valve 21 is closed, and then, the atmosphere valve 23 is opened.

With this, the chamber space 24 is opened to the atmosphere via the atmospheric line 22. In this way, since the atmosphere quickly flows into the chamber space 24 through the atmospheric line 22, the air pressure of the chamber space 24 becomes atmospheric pressure.

On the other hand, the air pressure of the enclosed space 17 is maintained at a vacuum pressure. Therefore, the air pressure of the enclosed space 17 becomes lower than the air pressure of the chamber space 24. That is, a differential pressure is generated in the enclosed space 17 and the chamber space 24. The differential pressure is the pressure difference obtained by subtracting the air pressure of the enclosed space 17 from the air pressure of the chamber space 24 ([air pressure of the chamber space 24]-[air pressure of the enclosed space 17]), specifically, for example, 0.095 MPa or more, It is preferably 0.096 MPa or more, more preferably 0.097 MPa or more, and for example, 0.1 MPa or less.

When the above-mentioned differential pressure occurs, as shown in FIG. 2F, the covering material 43 flows into the sealed space 17, and the sealed space 17 is filled with the covering material 43.

With this, the covering material 43 is filled into the groove 3 so that the upper surface of the upper first phosphor layer 52 is exposed.

Thereby, the second coating layer 4 having the same shape as the closed space 17 and including the coating material 43 is formed. That is, the second coating layer 4 is filled into the groove 3. The thickness L7 of the second coating layer 4 filled in the groove 3 is the same as the depth L7 of the groove 3.

Thereby, in the state supported (held) by the first temporary fixing sheet 10 and the protective sheet 6, a second having the plurality of optical semiconductor elements 1, the first phosphor layer 2, and the second coating layer 4 is obtained包 ELEMENT ASSEMBLY 29. The second covering element assembly 29 is an industrially available device, and preferably includes only a plurality of optical semiconductor elements 1, one first phosphor layer 2, and one second covering layer 4.

Thereafter, the second covered element assembly 29 is taken out of the vacuum chamber 18 together with the first temporary fixing sheet 10 and the protective sheet 6.

1-3-5. Step (v)

In step (v), as shown in FIG. 2G, when the second coating layer 4 contains a curable resin, the curable resin is cured. Specifically, if the curable resin is a thermosetting resin, the second coating layer 4 is heated.

Thereafter, as shown by the arrow in FIG. 2G, the protective sheet 6 is peeled from the second covered element assembly 29.

Specifically, first, the protective sheet 6 is irradiated with the above-mentioned active energy rays to reduce the adhesive force of the protective sheet 6. Then, the protective sheet 6 is peeled from the upper surface of the upper first phosphor layer 52 and the upper surface of the second coating layer 4.

As a result, the upper surface of the upper first phosphor layer 52 and the upper surface of the second coating layer 4 become exposed surfaces that are exposed upward. The upper surface of the second coating layer 4 and the upper surface of the upper first phosphor layer 52 are formed on the same plane.

Thereby, the second covering element assembly 29 with its upper surface exposed is obtained in a state supported by the first temporary fixing sheet 10.

Thereafter, as shown in FIG. 2H, the second coating layer 4 of the second coating element assembly 29 and the first phosphor layer 2 corresponding thereto are cut to singulate the optical semiconductor element 1. Specifically, the second coating layer 4 and the first phosphor layer 2 (bottom portion 36) corresponding to the groove 3 are cut along the thickness direction by a cutting device such as a cutter.

With this, in a state supported by the first temporary fixing sheet 10, the coated optical semiconductor element 5 including one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4 is obtained. The coated optical semiconductor element 5 is an industrially available device, and preferably includes only one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4.

In detail, the coated optical semiconductor element 5 includes: an optical semiconductor element 1; a first phosphor layer 2 which covers the upper surface and side surfaces of the optical semiconductor element 1 and has a bottom 36; and a second coating layer 4 which is located at the 1 The side of the phosphor layer 2 and covers the side surface of the first phosphor layer 2 and the upper surface of the bottom 36.

As shown in FIG. 4, the width β of the second coating layer 4 is the same as the length β of the bottom 36. The width β of the second coating layer 4 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

1-4. Step (4)

As shown in FIG. 2I, in step (4), the covered optical semiconductor element 5 is transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

Specifically, as shown in FIG. 2H, first, the first transfer sheet 27 is arranged above the plurality of covered optical semiconductor elements 5. Thereafter, the first transfer sheet 27 is lowered so that the lower surface of the first transfer sheet 27 and the upper surfaces of the plurality of coated optical semiconductor elements 5 (the upper surface of the upper first phosphor layer 52 and the second coating layer 4 Upper surface) contact.

Examples of the first transfer sheet 27 include known transfer sheets, and for example, SPV series (manufactured by Nitto Denko Corporation) and the like.

The adhesion force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is, for example, higher than the adhesion force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10. When the adhesion force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is higher than the adhesion force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10, in step (4), The covered optical semiconductor element 5 can be reliably transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

The adhesion force F2 of the plurality of coated optical semiconductor elements 5 to the transfer sheet 27 to the adhesion force F1 of the plurality of coated optical semiconductor elements 5 to the temporary fixing sheet 10 is, for example, more than 100%, preferably 110% or more, and more It is preferably 120% or more, and for example, 300% or less.

Specifically, the adhesion force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is, for example, 0.2 N/20 mm or more, preferably 0.3 N/20 mm or more, and more preferably 0.4 N/20 mm or more. For example, it is 3.0 N/20 mm or less. Next, the method of measuring the force F2 will be described in the following examples.

Furthermore, the adhesion force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10 is the adhesion force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10 after treatment (irradiation of active energy rays) Specifically, it is, for example, 0.4 N/20 mm or less, preferably 0.2 N/20 mm or less, more preferably 0.15 N/20 mm or less, and for example, 0.01 N/20 mm or more. Plural coated optical semiconductor elements The method of measuring the adhesive force F1 of the first temporary fixing sheet 10 after the treatment is described in the following examples.

Then, the first transfer sheet 27 is pulled relative to the first temporary fixing sheet 10. With this, the lower surface of the covered optical semiconductor element 5 is peeled off from the upper surface of the first temporary fixing sheet 10. Specifically, the lower surface of the optical semiconductor element 1 and the lower surface of the bottom 36 of the first phosphor layer 2 are peeled from the upper surface of the temporary fixing layer 11.

With this, the coated optical semiconductor element 5 including the optical semiconductor element 1, the first phosphor layer 2, and the second coating layer 4 is transferred to the first transfer sheet 27.

As shown in FIG. 4, thereafter, the coated optical semiconductor element 5 is mounted on the substrate 50.

Specifically, the coated optical semiconductor element 5 is flip-chip mounted on the substrate 50. That is, the bumps (not shown) of the optical semiconductor element 1 covering the optical semiconductor element 5 and the terminals (not shown) of the substrate 50 are electrically connected.

As a result, as shown in FIG. 4, a light-emitting device 51 including the substrate 50 and the coated optical semiconductor element 5 mounted on the substrate 50 is obtained. In detail, the light-emitting device 51 includes: a substrate 50; an optical semiconductor element 1 mounted on the substrate 50; a first phosphor layer 2 covering the side of the optical semiconductor element 1 and having a bottom 36; and a second coating layer 4 , Which covers the side surface of the first phosphor layer 2 and the upper surface of the bottom 36. The lower surface of the bottom 36 is in contact with the upper surface of the substrate 50.

In this light-emitting device 51, the optical semiconductor element 1 emits light by the power supplied from the substrate 50. Part of the light emitted from the optical semiconductor element 1 is converted into wavelengths by the first phosphor layer 2. Among the wavelength-converted light, the light toward the upper side is radiated directly to the upper side. In particular, the light emitted from the optical semiconductor element 1 to the side is appropriately mixed with the light whose wavelength is sufficiently converted by the bottom 36 and the light whose wavelength is converted by the upper portion of the bottom 36 of the first phosphor layer 2.

1-5. Effect of the first embodiment

Then, according to this method, as shown in FIG. 2F, in step (3), the bottom 36 of the first phosphor layer 2 is interposed between the second coating layer 4 filled in the groove 3 and the first temporary fixing sheet 10 Therefore, the second covering layer 4 is prevented from directly contacting the first temporary fixing sheet 10. Therefore, even if the adhesive force of the second coating layer 4 is high, it is possible to prevent the second coating layer 4 from adhering to the first temporary fixing sheet 10.

As a result, as shown in FIG. 2I, in step (4), the covered optical semiconductor element 5 can be reliably peeled off from the first temporary fixing sheet 10.

If the adhesion force F2 of the coated optical semiconductor element 5 to the first temporary fixing sheet 10 is lower than the adhesion force F1 of the coated optical semiconductor element 5 to the processed first temporary fixing sheet 10, then in step (4), the coating The optical semiconductor element 5 is not transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 and is in a state of being adhered to the first temporary fixing sheet 10. If the adhesive force F2 of the coated optical semiconductor element 5 to the first temporary fixing sheet 10 is the same as the adhesive force F1 of the coated optical semiconductor element 5 to the processed first temporary fixing sheet 10, then in step (4), the coated optical semiconductor The element 5 is not surely transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

However, according to this method, the adhesive force F2 of the coated optical semiconductor element 5 to the first temporary fixing sheet 10 is higher than the adhesive force F1 of the coated optical semiconductor element 5 to the processed first temporary fixing sheet 10, so as shown in FIG. 2I In step (4), the coated optical semiconductor element 5 can be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 more reliably.

According to this method, since the first phosphor layer 2 contains phosphors, it is possible to perform wavelength conversion on the light emitted from the optical semiconductor element 1.

In this method, as shown in FIG. 2F, in step (3), the second coating layer 4 is filled in the groove 3 in such a way that the upper surface of the first phosphor layer 2 is exposed, so that The optical semiconductor element 5 is covered with directional light upward. Furthermore, a light-emitting device 51 that emits light with upward directivity can be obtained.

<Variation of the first embodiment>

In the first embodiment, step (3) is implemented by using a differential pressure method (step (ii) to step (iv)), but for example, as shown in FIGS. 1D and 2G, the differential pressure may not be used. The protective sheet 6 covers the upper surface of the upper first phosphor layer 52 and forms the second coating layer 4 in the groove 3.

In detail, in this modified example, the coating material 43 is poured into the mold provided with the protective sheet 6 on the surface, and thereafter, the first coated element assembly 41 shown in FIG. 1C is turned upside down and the upper first screen The second coating layer 4 is molded so that the optical body layer 52 is in contact with the protective sheet 6.

Furthermore, in the first embodiment, the second coating layer 4 is an optical functional layer containing a light-reflecting component and/or a light-absorbing component.

However, the second coating layer 4 of this modified example may be a transparent layer that does not contain any of the light-reflecting component and the light-absorbing component, and includes only the resin.

<Second Embodiment>

In the second embodiment, the same components and steps as those in the above-described first embodiment are denoted by the same reference symbols, and detailed descriptions thereof are omitted.

In the first embodiment, as shown in FIGS. 1E to 2G, in step (3), the second coating layer 4 is filled into the groove 3 in such a manner that the upper surface of the upper first phosphor layer 52 is exposed .

However, in the second embodiment, as shown in FIG. 5C, the second coating layer 4 is filled in the groove 3 so as to cover the upper surface of the upper first phosphor layer 52.

The second embodiment of the method for manufacturing a coated optical semiconductor element of the present invention includes the following steps: Step (1), which uses the first phosphor layer 2 to expose the first phosphor layer 2 and the plurality of optical semiconductor elements 1 A plurality of optical semiconductor elements 1 (refer to FIG. 5A) that are temporarily fixed on the upper surface of the first temporary fixing sheet 10 by being spaced from each other by directly contacting the upper surface of the first temporary fixing sheet 10 (see FIG. 5A); step (2), The first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with a groove 3 open upward (see FIG. 5B); step (3), which fills the second coating layer 4 into the groove 3, and Obtaining a coated optical semiconductor element 5 having an optical semiconductor element 1, a first phosphor layer 2 and a second coating layer 4 (refer to FIGS. 5C and 6D); and Step (4), which transfers the covered optical semiconductor element 5 from the first temporary fixing sheet 10 to the first transfer sheet 27 (see FIG. 6E ).

In the step (3), first, the second coating layer 4 formed in a substantially flat plate shape is prepared from the coating material 43.

The thickness L9 of the second coating layer 4 is, for example, 50 μm or more, preferably 75 μm or more, more preferably 100 μm or more, and for example, 2500 μm or less.

Thereafter, the first coating element assembly 41 and the first temporary fixing sheet 10 are pressure-bonded to the second coating layer 4, for example, and preferably thermocompression-bonded (thermocompression).

The conditions of crimping (thermocompression bonding) are appropriately adjusted according to the type of resin contained in the coating material.

As a result, the second coating layer 4 is filled into the groove 3 and the upper first phosphor layer 52 is covered. In addition, the second coating layer 4 is also arranged above the groove 3. Thereby, a second covering element assembly 29 including a plurality of optical semiconductor elements 1, one first phosphor layer 2, and one second covering layer 4 is obtained.

The second covering layer 4 in the second covering element assembly 29 has a shape extending in the plane direction. Specifically, the upper surface of the second coating layer 4 has a flat surface extending in the surface direction. On the other hand, the lower surface of the second coating layer 4 corresponds to the groove 3, and integrally has a protruding portion 45 protruding downward, and a concave portion 46 covering the upper surface of the upper first phosphor layer 52 and opening downward.

In step (3), as shown in FIG. 6D, the first phosphor layer 2 and the second coating layer 4 corresponding to the groove 3 are cut. Specifically, the bottom portion 36 and the protruding portion 45 of the second coating layer 4 are cut by a cutting device such as a cutter.

With this, in a state supported by the first temporary fixing sheet 10, the coated optical semiconductor element 5 including one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4 is obtained.

In the covered optical semiconductor element 5, the thickness z of the second coating layer 4 located above the upper first phosphor layer 52 is set relatively thin as shown in FIG. 7, specifically, for example, 1000 μm or less, It is preferably 500 μm or less, more preferably 300 μm or less, and for example, 1 μm or more, preferably 10 μm or more.

In the covered optical semiconductor element 5, the upper surface of the upper first phosphor layer 52, the side surface of the first phosphor layer 2, and the upper surface of the bottom 36 are covered with the second coating layer 4.

Then, as shown in FIG. 6E, in step (5), the coated optical semiconductor element 5 is transferred from the first temporary fixing sheet 10 to the first transfer sheet 27, and thereafter, as shown in FIG. 7, the flip chip is mounted于board 50. With this, the light emitting device 51 is obtained.

<Operation effect of the second embodiment>

According to the second embodiment, the same effect as the first embodiment can be exerted.

Furthermore, according to the second embodiment, as shown in FIG. 5C, in step (3), the second coating layer 4 is filled into the groove 3 so as to cover the upper surface of the upper first phosphor layer 52, so A part of the light emitted upward by the optical semiconductor element 1 is wavelength-converted by the upper first phosphor layer 52, and then passes through the second coating layer 4, so that the light is appropriately mixed. Therefore, the coated optical semiconductor element 5 excellent in optical characteristics and the light-emitting device 51 excellent in optical characteristics can be obtained.

<Variation of Second Embodiment>

In the second embodiment, the thickness z of the second cladding layer 4 on the upper side of the first phosphor layer 52 is set relatively thin, but in this modification, for example, the first phosphor layer 52 on the upper side The thickness z of the second coating layer 4 on the upper side is set relatively thick. The thickness z of the second coating layer 4 located above the upper first phosphor layer 52 is specifically, for example, 5 μm or more, preferably 50 μm or more, more preferably 100 μm or more, and for example, 500 μm or less.

If the thickness z of the second coating layer 4 located above the upper first phosphor layer 52 is equal to or greater than the above lower limit, the coated optical semiconductor element 5 and the light-emitting device 51 can emit uniform light.

<Third Embodiment and Fourth Embodiment>

In the third embodiment and the fourth embodiment, the same components and steps as those in the first embodiment and the second embodiment described above are denoted by the same reference symbols, and detailed descriptions thereof are omitted.

In the first embodiment and the second embodiment, the second coating layer 4 does not contain phosphor.

However, in the third embodiment and the fourth embodiment, as with reference to FIGS. 8 and 9, the second phosphor layer 84 as an example of the second coating layer contains phosphor. That is, both the first phosphor layer 2 and the second phosphor layer 84 contain phosphor. Preferably, the first phosphor layer 2 contains red phosphor, and the second phosphor layer 84 contains green phosphor.

The second phosphor layer 84 of the third embodiment and the fourth embodiment has the same shape and structure as the second coating layer 4 of the first embodiment and the second embodiment. The second phosphor layer 84 contains the resin and phosphor contained in the coating composition. The content ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, and, for example, 80 parts by mass or less, preferably 50 parts by mass or less with respect to 100 parts by mass of the resin. The content ratio of the phosphor is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, and, for example, 90% by mass or less, preferably 80% with respect to the total mass of the resin and the phosphor %the following.

The content ratio of the phosphor contained in the first phosphor layer 2 to the phosphor contained in the second phosphor layer 84 (the phosphor contained in the first phosphor layer 2/the second phosphor The phosphor contained in the body layer 84) is, for example, 0.1 or more, preferably 0.5 or more on a mass basis, and, for example, 10 or less, preferably 2 or less.

As shown in FIG. 8, the coated optical semiconductor element 5 obtained by the manufacturing method of the third embodiment includes: an optical semiconductor element 1; a first phosphor layer 2 that covers the upper surface and side surfaces of the optical semiconductor element 1, and It has a bottom 36; and a second phosphor layer 84, which covers the side surface of the first phosphor layer 2 and the upper surface of the bottom 36.

In the third embodiment, the width β of the second phosphor layer 84 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

The thickness L7 of the second phosphor layer 84 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

Further, as shown in FIG. 9, the coated optical semiconductor element 5 obtained by the manufacturing method of the fourth embodiment includes: an optical semiconductor element 1; a first phosphor layer 2 which covers the upper surface and side surfaces of the optical semiconductor element 1 , And has a bottom 36; and a second phosphor layer 84, which covers the upper surface of the first phosphor layer 2 (including the upper surface of the bottom 36) and side surfaces. The upper surface of the second phosphor layer 84 is a flat surface extending in the surface direction. The lower surface of the second phosphor layer 84 has protrusions 45 and recesses 46.

In the fourth embodiment, the width β of the second phosphor layer 84 is the same as the width β in the third embodiment. The thickness z of the second phosphor layer 84 above the upper first phosphor layer 52 is set relatively thick, for example, specifically, for example, 10 μm or more, preferably 25 μm or more, more preferably 50 μm or more, and, For example, it is 2000 μm or less.

<Operation effect of the third embodiment and the fourth embodiment>

According to the third embodiment and the fourth embodiment, it is also possible to exert the same effects as the above-described embodiments.

As shown in FIG. 8, according to the coated optical semiconductor element 5 obtained in the third embodiment, light emitted upward from the optical semiconductor element 1 is wavelength-converted by the upper first phosphor layer 52. In addition, the light emitted from the optical semiconductor element 1 toward the side is sequentially wavelength-converted by the first phosphor layer 2 and the second phosphor layer 84. Therefore, it is possible to obtain a light-emitting device 51 that covers the optical semiconductor element 5 with excellent luminous efficiency and further has excellent luminous efficiency.

As shown in FIG. 9, according to the coated optical semiconductor element 5 obtained by the fourth embodiment, the light emitted from above and toward the side of the optical semiconductor element 1 is caused by the first phosphor layer 2 and the second phosphor layer 84 Perform wavelength conversion in sequence. Therefore, it is possible to obtain the light-emitting device 51 which is excellent in the uniformity of light and the light-emitting efficiency of the coated optical semiconductor element 5 and further the light-emitting efficiency.

<Fifth Embodiment and Sixth Embodiment>

In the fifth embodiment and the sixth embodiment, the same components and steps as those in the first to fourth embodiments described above are denoted by the same reference symbols, and detailed descriptions thereof are omitted.

In the third embodiment and the fourth embodiment, the first phosphor layer 2 as an example of the first coating layer contains phosphor.

However, in the fifth embodiment and the sixth embodiment, the first coating layer 82 does not contain phosphor. That is, the first coating layer 82 is a transparent layer that does not contain phosphor.

On the other hand, the second phosphor layer 84 is a phosphor layer containing phosphor. It is preferable that the second phosphor layer 84 contains yellow phosphor.

As shown in FIGS. 10 and 11, the first coating layer 82 of the fifth embodiment and the sixth embodiment has the same shape and structure as the first phosphor layer 2 of the first embodiment and the second embodiment. The first coating layer 82 contains the transparent resin composition (resin composition without phosphor). Therefore, the first coating layer 82 is a transparent layer having transparency.

Furthermore, as with reference to FIGS. 1B and 1C, in step (2), in a state supported by the first temporary fixing sheet 10, a plurality of optical semiconductor elements 1, and covering these and having grooves 3 are obtained The first covering element assembly 41 of the first covering layer 82 (not shown in FIGS. 1B and 1C).

The second phosphor layer 84 has the same shape and structure as the second coating layer 4 of the first embodiment and the second embodiment. The second phosphor layer 84 includes a composition for forming the second phosphor layer 84 similar to the third embodiment and the fourth embodiment, that is, it contains a resin and a phosphor.

As shown in FIG. 10, the coated optical semiconductor element 5 obtained by the manufacturing method of the fifth embodiment includes: an optical semiconductor element 1; a first coating layer 82 that covers the upper surface and side surfaces of the optical semiconductor element 1 and has The bottom 36; and the second phosphor layer 84, covering the side surface of the first coating layer 82 on the side of the first coating layer 82, and the upper surface of the bottom 36. The first coating layer 82 covering the optical semiconductor element 5 has a portion located on the upper side of the optical semiconductor element 1 (the upper first coating layer 83. Corresponding to the upper first phosphor layer 52 in the first embodiment), and the upper first layer is exposed 1 The upper surface of the coating layer 83.

In the fifth embodiment, the distance α between the inner side surface of the groove 3 and the side surface of the optical semiconductor element 1 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less. The thickness L7 of the second phosphor layer 84 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

Further, as shown in FIG. 11, the coated optical semiconductor element 5 obtained by the manufacturing method of the sixth embodiment includes: an optical semiconductor element 1; a first coating layer 82 which covers the upper surface and side surfaces of the optical semiconductor element 1, It also has a bottom 36; and a second phosphor layer 84, which covers the upper first coating layer 83.

In the sixth embodiment, the width β of the second phosphor layer 84 is the same as the width β in the fifth embodiment. The thickness z of the second phosphor layer 84 located above the upper first coating layer 83 is set relatively thick, for example, specifically, for example, 20 μm or more, preferably 50 μm or more, and more preferably 100 μm or more, for example Below 2000μm.

<Functions and Effects of the Fifth Embodiment and the Sixth Embodiment>

According to the fifth embodiment and the sixth embodiment, it is also possible to exert the same effects as the above-described embodiments.

As shown in FIG. 10, according to the coated optical semiconductor element 5 obtained in the fifth embodiment, the light emitted from the optical semiconductor element 1 passes through the first coating layer 82. The light that has passed through the first coating layer 82 toward the side is inclined upward toward the side after the wavelength conversion is performed by the second phosphor layer 84. Therefore, the light extraction efficiency can be improved.

As shown in FIG. 11, according to the coated optical semiconductor element 5 obtained in the sixth embodiment, the light emitted from the optical semiconductor element 1 passes through the first coating layer 82. The light that has passed through the first coating layer 82 toward the side is inclined upward toward the side after the wavelength conversion is performed by the second phosphor layer 84. In addition, a part of the light passing through the upper first coating layer 83 toward the upper side is upward after the second phosphor layer 84 performs wavelength conversion. Therefore, this coated optical semiconductor element 5 is excellent in luminous efficiency.

<Seventh Embodiment>

In the seventh embodiment, the same components and steps as those in the above-described first to sixth embodiments are denoted by the same reference symbols, and detailed descriptions thereof are omitted.

In the first embodiment, as an example of the temporary fixing piece, the first temporary fixing piece 10 is cited. On the other hand, in the seventh embodiment, as shown in FIG. 15C, the first transfer sheet 37 is cited as an example of the temporary fixing sheet.

In the first embodiment, as shown in FIGS. 1A and 1B, in step (1), the lower surfaces of the plurality of optical semiconductor elements 1 are directly temporarily fixed to the temporary fixing sheet 10.

On the other hand, in the seventh embodiment, in step (1), as shown in FIG. 15C, each of the plurality of optical semiconductor elements 1 is indirectly temporarily fixed to the temporary fixing sheet via the first phosphor layer 2 10.

The seventh embodiment of the method for manufacturing a coated optical semiconductor element of the present invention includes the following steps: a step of preparing a first coated element assembly 41 (see FIGS. 15A and 15B); and transferring the first coated element assembly 41 to Step (1) (see FIG. 15C) of the first transfer sheet 37 as an example of temporarily fixing the sheet; step (2) (see FIG. 15D) of providing the groove 3; step of filling the second coating layer 4 into the groove 3 (3) (see FIG. 16E); the step (4) of transferring the covered optical semiconductor element 5 from the first transfer sheet 37 to the second transfer sheet 38 as an example of the transfer sheet (see FIG. 16F); and The step of removing a part of the second coating layer 4 (see FIG. 16G). In the seventh embodiment, the above steps are performed in order.

As shown in FIG. 15C, in step (1), the first coated element assembly 41 is transferred to the first transfer sheet 37. When transferring the first covering element assembly 41 to the first transfer sheet 37, as shown in FIG. 15B, first, the first transfer sheet 37 is arranged above the first covering element assembly 41. The first transfer sheet 37 is also a temporary fixing sheet that can temporarily fix the first covering element assembly 41 including the optical semiconductor elements 1 arranged at intervals. As the first transfer sheet 37, the same transfer sheet as the transfer sheet 27 described above can be mentioned.

Thereafter, the first transfer sheet 37 is lowered, and the lower surface of the first transfer sheet 37 is brought into contact with the upper surface of the first coated element assembly 41.

Then, the first transfer sheet 37 is pulled relative to the first temporary fixing sheet 10. With this, the lower surface of the first covering element assembly 41 is peeled from the upper surface of the first temporary fixing sheet 10. Thereby, the first covering element assembly 41 including the plurality of optical semiconductor elements 1 and covering the first phosphor layer 2 is temporarily fixed to the first transfer sheet 37. Thereafter, as shown in FIG. 15C, the first covering element assembly 41 and the first transfer sheet 37 are turned upside down.

As a result, the first coated element assembly 41 is exposed on the upper surface with its lower surface supported by the first transfer sheet 37. In the first covered element assembly 41, the lower surfaces of the plurality of optical semiconductor elements 1 pass through the first phosphor layer 2 on the upper side of the first transfer sheet 37, and are supported by the first transfer sheet 37 (temporarily fixed) . In addition, in the first coated element assembly 41, the upper surface of the optical semiconductor element 1 is exposed. In addition, in the first coated element assembly 41, the upper surface of the optical semiconductor element 1 is formed of the above-mentioned bumps. In addition, the first phosphor layer 2 is interposed between the plurality of optical semiconductor elements 1 and the first transfer sheet 37.

As shown in FIG. 15D, in step (2), in the first coated element assembly 41, the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with a groove 3 that opens upward.

The groove 3 is opened in the same direction as the bump (upper surface) of the optical semiconductor element 1, specifically, toward the upper side.

The depth L7 of the groove 3 is set larger than the thickness L1 of the optical semiconductor element 1, for example. Specifically, the depth L7 of the groove 3 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

As shown in FIG. 16E, the groove 3 is filled with the second coating layer 4 so as to cover the upper surface (bump) of the optical semiconductor element 1.

Thereafter, as shown in FIG. 16F, the first phosphor layer 2 and the second coating layer 4 corresponding to the groove 3 are cut.

Thereby, in the state supported (temporarily fixed) by the first transfer sheet 37, a coated optical semiconductor including one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4 is obtained Element 5.

In the coated optical semiconductor element 5, the thickness h1 of the second coating layer 4 located above the optical semiconductor element 1 is, for example, 500 μm or less, preferably 300 μm or less, and for example, 1 μm or more, preferably 10 μm or more.

Thereafter, as shown in FIG. 16G, the upper end of the second coating layer 4 is removed.

Specifically, the second coating layer 4 covering each upper surface of the plurality of optical semiconductor elements 1 is removed. At the same time, the upper end of the second coating layer 4 located above the bottom 36 is also removed.

When removing the upper end portion of the second coating layer 4, although not shown, for example, the method of (1) using an adhesive sheet is used, although not shown, for example, the method of (2) using a solvent is used, although not shown, However, for example, (3) a method of using a polished member is used. Hereinafter, each method will be described.

(1) Method of using adhesive sheet

The adhesive sheet is prepared from an adhesive and has a continuous sheet shape in the front-rear direction and the left-right direction. Regarding the size of the adhesive sheet, for example, when the adhesive sheet is projected in the thickness direction, it is set to include a plurality of upper ends of the second coating layer 4. Examples of the adhesive include acrylic adhesives, rubber adhesives, polysiloxane adhesives, urethane adhesives, and polypropylene amide adhesives. In addition, the adhesive sheet can also be supported by supporting materials and the like. The adhesive strength of the adhesive sheet at 25°C (180°C peel adhesion) is, for example, 7.5 (N/20mm) or more, preferably 10.0 (N/20mm) or more, and, for example, 100 (N/20mm) or less. Preferably it is 20.0 (N/20mm) or less.

In the method of using the adhesive sheet, the adhesive surface of the adhesive sheet (in the case where the adhesive sheet is supported by the support material, the opposite side of the surface supported by the support material) is adhered to the upper surface of the second coating layer 4, Then, the upper end portion of the second coating layer 4 is peeled off. Specifically, first, the adhesive sheet is lowered, and then the adhesive sheet is adhered to the upper end of the second coating layer 4, and then, the adhesive sheet and the upper end of the second coating layer 4 are simultaneously raised (lifted).

The second coating layer 4 on the upper side of the optical semiconductor element 1 is peeled off at the interface with the upper surface (bump) of the optical semiconductor element 1 and follows the adhesive sheet.

In addition, when the peeling of the upper end portion of the second coating layer 4 is not completed once, the above operation is repeated a plurality of times, thereby completing the peeling of the upper end portion of the second coating layer 4. At this time, in the second coating layer 4, the upper end portion of the second coating layer 4 located above the bottom 36 also follows the adhesive sheet simultaneously with the second coating layer 4 located above the optical semiconductor device 1.

(2) Method of using solvent

As the solvent, for example, a solvent that can completely or partially dissolve or disperse the resin coating composition is selected. Specifically, examples of the solvent include organic solvents and water-based solvents. Examples of the organic solvent include alcohols such as methanol and ethanol; ketones such as acetone and methyl ethyl ketone; aliphatic hydrocarbons such as hexane; aromatic hydrocarbons such as toluene; and ethers such as tetrahydrofuran. Preferably, alcohols and aromatic hydrocarbons are listed.

In this method, specifically, the cloth absorbs the solvent, and the upper surface of the second coating layer 4 is wiped with the cloth. By this, the upper end portion of the second coating layer 4 is removed.

(3) Method of using abrasive components

Examples of polishing members include cloths such as polishing cloths, brushes, and water blasting machines.

The upper surface of the second coating layer 4 is polished by the polishing member. By this, the upper end portion of the second coating layer 4 is removed.

Thereby, the upper surface of the optical semiconductor element 1, the upper surface of the first phosphor layer 2 and the upper surface of the second coating layer 4 become the same plane. That is, the upper surface of the optical semiconductor element 1 and the upper surface of the first phosphor layer 2 and the upper surface of the second coating layer 4 form the same plane.

As a result, the thickness h2 of the second coating layer 4 is, for example, 15 μm or more, preferably 50 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

Then, after the coated optical semiconductor element 5 is transferred to the second transfer sheet 38 as indicated by the two-dot chain line of FIG. 16G, as shown in FIG. 17, a pick-up device (not shown) with a suction nozzle or the like is used to transfer The coated optical semiconductor element 5 is flip-chip mounted on the substrate 50. With this, the light emitting device 51 is obtained.

The adhesion force F4 of the plurality of coated optical semiconductor elements 5 to the second transfer sheet 38 is, for example, higher than the adhesion force F3 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 37. When the adhesion force F4 of the plurality of coated optical semiconductor elements 5 to the second transfer sheet 38 is higher than the adhesion force F3 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 37, in step (4), The covered optical semiconductor element 5 can be reliably transferred from the first transfer sheet 37 to the second transfer sheet 38.

The adhesion force F4 of the plurality of coated optical semiconductor elements 5 to the second transfer sheet 38 relative to the adhesion force F3 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 37 exceeds, for example, 100%, preferably 110% or more, More preferably, it is 120% or more, and, for example, 300% or less.

<Operation effect of the seventh embodiment>

According to the seventh embodiment, the same effect as the second embodiment can be exerted.

According to this method, as shown in FIG. 16E, in step (3), the bottom 36 of the first phosphor layer 2 is interposed between the second coating layer 4 filled in the groove 3 and the first transfer sheet 37 Therefore, the second coating layer 4 is prevented from directly contacting the first transfer sheet 37. Therefore, even if the adhesive force of the second coating layer 4 is high, it is possible to prevent the second coating layer 4 from adhering to the first transfer sheet 37.

As a result, as shown in FIGS. 16F and 16G, in step (4), the covered optical semiconductor element 5 can be reliably peeled from the first transfer sheet 37.

In addition, if the adhesion force F4 of the coated optical semiconductor element 5 to the second transfer sheet 38 is lower than the adhesion force F3 of the coated optical semiconductor element 5 to the processed first transfer sheet 37, then in step (4), the coated light The semiconductor element 5 is not transferred from the first transfer sheet 37 to the second transfer sheet 38, but is in a state of being adhered to the first transfer sheet 37. If the adhesive force F4 of the coated optical semiconductor element 5 to the second transfer sheet 38 is the same as the adhesive force F3 of the coated optical semiconductor element 5 to the processed first transfer sheet 37, then in step (4), the coated optical semiconductor element 5 It is not surely transferred from the first transfer sheet 37 to the second transfer sheet 38.

However, according to this method, the adhesive force F4 of the coated optical semiconductor element 5 to the second transfer sheet 38 is higher than the adhesive force F3 of the coated optical semiconductor element 5 to the processed first transfer sheet 37, so FIG. 16G As shown, in step (4), the coated optical semiconductor element 5 can be transferred from the first transfer sheet 37 to the second transfer sheet 38 more reliably.

Also, as shown in FIG. 17, in the covered optical semiconductor element 5, the first phosphor layer 2 has a bottom 36, so that the light emitted from the optical semiconductor element 1 and directed obliquely upward can be wavelength-converted by the bottom 36 efficiently . Therefore, it is possible to obtain the light-emitting device 51 that covers the optical semiconductor element 5 that is excellent in light extraction efficiency and that is excellent in light extraction efficiency.

<Eighth Embodiment>

In the eighth embodiment, the same components and steps as those in the above-mentioned first to seventh embodiments are denoted by the same reference symbols, and detailed descriptions thereof are omitted.

In the eighth embodiment, as shown in FIG. 17, a bottom portion 36 as a protruding portion is provided on the first phosphor layer 2.

In the eighth embodiment, as shown in FIG. 19, the first phosphor layer 2 does not have the bottom portion 36 as a protruding portion.

The eighth embodiment of the method for manufacturing a coated optical semiconductor device of the present invention includes, in addition to the steps included in the seventh embodiment, the first phosphor layer 2 as shown in FIGS. 18A and 18B. Steps on the upper end of the bottom 36.

The step of removing the upper end of the first phosphor layer 2 is performed after the step (4) of transferring the covered optical semiconductor element 5 to the second transfer sheet 38 shown in FIG. 18A.

In the step of removing the upper end of the first phosphor layer 2 as shown in FIG. 18B, the same method as the method of removing the upper end of the second coating layer 4 in the seventh embodiment is used.

Thereby, the upper end including the bottom 36 is removed in the first phosphor layer 2.

In this way, the upper end of the second coating layer 4 is exposed on the upper side. The upper surface of the second coating layer 4 is flush with the upper surface of the first phosphor layer 2. That is, the upper surface of the second coating layer 4 and the upper surface of the first phosphor layer 2 form the same plane.

The first phosphor layer 2 has a substantially bottomed box shape, and has a shape in which the optical semiconductor element 1 is buried in the lower end portion thereof. That is, it has a shape that covers the optical semiconductor element 1 in the lower portion and has a concave portion that opens downward. Specifically, the first phosphor layer 2 has an upper surface (upper end surface) exposed on the upper side, adhered to the lower surface of the second transfer sheet 38, and an outer side surface covered by the inner side surface of the second coating layer 4, and The upper surface and the inner surface of the side surface of the optical semiconductor element 1 are covered.

The second coating layer 4 is disposed outside the first phosphor layer 2 in the plane direction, and has a substantially rectangular frame shape. The second coating layer 4 has an upper surface on the same plane as the upper surface of the first phosphor layer 2, a lower surface on the same plane as the lower surface of the first phosphor layer 2 and the optical semiconductor element 1, and is exposed outward in the plane direction The side surface and the inner surface covering the outer surface of the first phosphor layer 2.

The thickness L4 of the upper first phosphor layer 52 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

Thereafter, as shown in FIG. 19, the pick-up device (not shown) provided with a suction nozzle or the like is used to mount the flip-chip of the covered optical semiconductor element 5 on the substrate 50. With this, the light emitting device 51 is obtained.

<Effect of the eighth embodiment form>

According to the eighth embodiment, the same effects as the seventh embodiment can be exerted.

In addition, in the covered optical semiconductor element 5 and the light-emitting device 51, since the first phosphor layer 2 does not include the bottom 36 (see FIG. 17), the leakage of light to the side can be suppressed, and the brightness upward (front brightness) can be improved. ).

The specific values such as the blending ratio (content ratio), physical property values, and parameters used in the following descriptions can be replaced with the corresponding blending ratios (content ratio) and physical properties described in the above "Forms for Implementing the Invention". The upper limit (value defined by "below" and "not reached") or the lower limit (value defined by "above" and "exceeded") of values and parameters.

First, each component will be described in detail.

Phenyl polysiloxane resin composition: Phenyl polysiloxane resin composition A described in the examples of Japanese Patent Laid-Open No. 2015-073084

Methyl-based polysiloxane resin composition: trade name "LS1-6140", manufactured by Nusil Corporation

Titanium oxide: light reflective component, trade name "R-706", average particle size 0.38 μm, manufactured by Dupont

Silicon dioxide filler: inorganic filler, trade name "FB9454", average particle diameter 20 μm, manufactured by Denka

Carbon black: light-absorbing particles, brand name "MA600", average particle diameter 20 nm, manufactured by Mitsubishi Chemical Corporation

Yellow phosphor: YAG phosphor, trade name "Y468", YAG: Ce, average particle diameter 17 μm, manufactured by Nemoto Lumi-Materials

Red phosphor: CASN phosphor, trade name "ER6238", CaAlSiN ₃ : Eu, average particle size 15 μm, manufactured by Intematix

Green phosphor: LuAG phosphor: trade name "LP-6956", Lu ₃ Al ₅ O ₁₂ : Ce, average particle size 15 μm, manufactured by LWB

(Examples and comparative examples corresponding to the first embodiment)

Example 1

Step (1): As shown in FIG. 1A, on the upper surface of the first temporary fixing sheet 10, spaced apart by an interval L3 of 300 μm (pitch P 1440 μm), and arrange a plurality of included blue with a thickness L1 of 150 μm and a width L2 of 1140 μm Optical semiconductor element 1 of color LED. The first temporary fixing sheet 10 includes a temporary fixing layer 11 composed of a double-sided tape, and a support layer 12 composed of a stainless steel plate.

Then, the first phosphor layer 2 in the form of a flat plate was prepared from the phosphor resin composition containing 15 parts by mass of the yellow phosphor and 100 parts by mass of the phenyl polysiloxane resin composition. The thickness L0 of the first phosphor layer 2 is 350 μm.

Thereafter, as shown in FIG. 1B, the first phosphor layer 2 is thermocompression-bonded to the plurality of first phosphor layers 2. The conditions for thermocompression bonding are 90°C and 10 minutes. As a result, the first phosphor layer 2 directly contacts the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1.

The thickness L4 of the upper first phosphor layer 52 is 150 μm, and the thickness L5 of the first phosphor layer 2 between the adjacent optical semiconductor elements 1 is 300 μm.

Step (2): As shown in FIG. 1C, using a dicing machine 35 with a thickness of 200 μm, a groove 3 is provided in the first phosphor layer 2 between adjacent optical semiconductor elements 1.

The width L6 of the groove 3 is 200 μm, and the depth L7 of the groove 3 is 280 μm. The thickness L8 of the bottom 36 is 20 μm. The distance α between the inner side of the groove 3 and the side of the optical semiconductor element 1 is 100 μm.

A first coated element assembly 41 having a plurality of optical semiconductor elements 1 and a first phosphor layer 2 having grooves 3 was obtained.

Step (3): As a method of filling the second coating layer 4 into the groove 3, step (i) to step (v) are sequentially performed.

Step (i): First, prepare the adhesive.

That is, in a reaction vessel equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 12.6 parts by mass of 2-hydroxyethyl acrylate (2-HEA), and diphenyl peroxide 0.25 parts by mass of formaldehyde (BPO, polymerization initiator) (trade name "Nyper BW", manufactured by NOF Corporation) was poured into toluene (polymerization solvent), and the monomer components were copolymerized at 60°C under a nitrogen flow. By this, a 45% by mass toluene solution of acrylic polymer was obtained. 13.5 parts by mass of methacryloyl oxyethyl isocyanate was blended into it, and the addition reaction of methacryloyl oxyethyl isocyanate (isocyanate group-containing compound) to the acrylic polymer was carried out to prepare carbon- Acrylic polymer with double carbon bonds. In addition, to the toluene solution of the acrylic polymer, an isocyanate-based crosslinking agent (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 0.1 part by mass with respect to 100 parts by mass of the solid content of the acrylic polymer. , And photopolymerization initiator (trade name "Irgacure 127", (2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl -Propanyl)-benzyl]phenyl}-2-methyl-propane-1-one, manufactured by Ciba Specialty Chemicals) 2 parts by mass. By this, an adhesive containing a resin composition into which a carbon-carbon double bond is introduced is prepared.

Then, after applying the adhesive to the surface of the support sheet 62 containing a PET film (manufactured by Daisan Paper Co., Ltd.) with a thickness of 125 μm, it was dried at 120° C. for 3 minutes and then aged at 50° C. for 24 hours. Accordingly, an adhesive layer 61 with a thickness of 30 μm is formed on the surface of the support sheet 62.

Thus, a protective sheet 6 having an adhesive layer 61 and a support sheet 62 and having a thickness of 145 μm is prepared. Furthermore, the tensile elastic modulus of the protective sheet 6 at 25°C was 3,650 MPa.

Thereafter, as shown in FIG. 1D, using a hand roller, the adhesive layer 61 of the protective sheet 6 is bonded to the upper surface of the upper first phosphor layer 52. Furthermore, the lower surface of the adhesive layer 61 is spaced from the bottom surface of the groove 3.

Step (ii): As shown in FIG. 1E, prepare a vacuum dispenser 39 equipped with a vacuum chamber 18, a vacuum line 19, a vacuum pump 20, a vacuum valve 21, an atmospheric line 22, an atmospheric valve 23, and a coating material 43之vacuum device 16.

Then, with the vacuum valve 21 and the atmospheric valve 23 opened, the vacuum pump 20 is actuated, and then the first covering element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6 are installed in the vacuum chamber 18.

Then, the inside of the chamber space 24 is sealed, and then, the atmospheric valve 23 is closed. In this way, the air pressure in the chamber space 24 becomes 6.6×10-4 MPa.

Step (iii): preparing a coating material 43 containing 100 parts by mass of the methyl-based polysiloxane resin composition, 10 parts by mass of titanium oxide, and 100 parts by mass of silica filler.

Then, as shown in FIG. 1E, from the nozzle 41 of the vacuum dispenser 39, a coating material 431.3 mL (142% of the volume of the enclosed space 7) is applied to the surface under the peripheral edge of the protective sheet 6 and opposite to it The first temporary fixing piece 10 is between the upper surfaces. Thereby, the closed space 7 is formed.

Step (iv): Next, as shown in FIG. 2F, the vacuum valve 21 is closed, and thereafter, the atmosphere valve 23 is opened. By this, the air pressure of the chamber space 24 is set to atmospheric pressure.

In this way, the covering material 43 flows into the sealed space 7, and the sealed space 7 is filled with the covering material 43. That is, the second coating layer 4 having the same shape as the sealed space 7 and including the coating material 43 is formed. That is, the groove 3 is filled with the second coating layer 4. Then, a second covering element assembly 29 including a plurality of optical semiconductor elements 1, a first phosphor layer 2, and a second covering layer 4 is obtained.

Thereafter, the first temporary fixing sheet 10, the second coated element assembly 29, and the protective sheet 6 are taken out of the vacuum chamber 18.

Step (v): Next, as shown in FIG. 2G, the second coated element assembly 29 and the protective sheet 6 are put into a hot-air circulation dryer and heated at 150°C for 2 hours to thereby make the second coated layer 4 Completely hardened.

Thereafter, the protective sheet 6 is irradiated with active energy rays to reduce the adhesive force of the adhesive layer 61. Next, as shown by the arrow in FIG. 2G, the protective sheet 6 is peeled from the upper surface of the upper first phosphor layer 52 and the upper surface of the second coating layer 4.

As shown in FIG. 2H, thereafter, the second coating layer 4 and the bottom 36 are cut along the thickness direction using a cutter having a thickness of 40 μm. With this, a plurality of coated optical semiconductor elements 5 are obtained in a state supported by the first temporary fixing sheet 10. The width β of the second coating layer 4 is 300 μm. The size of the coated optical semiconductor element 5 is 2440 μm×2440 μm×300 μm.

Step (4): As shown in FIG. 2I, a plurality of coated optical semiconductor elements 5 are transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 including SPV-224 (manufactured by Nitto Denko Corporation).

Manufacturing of light-emitting devices:

Thereafter, the covered optical semiconductor element 5 is flip-chip mounted on the substrate 50 to obtain a light-emitting device 51.

Examples 2 and 3

In step (2), except that the thickness L8 of the bottom portion 36 corresponding to the groove 3 is changed as shown in Table 1, the treatment is carried out in the same manner as in Example 1, to obtain a coated optical semiconductor element 5, and then a light-emitting device is obtained 51.

Comparative example 1

In step (2), as shown in FIG. 12A, using the cutter 35, the first phosphor layer 2 is provided with an opening 3'penetrating through the thickness direction thereof, except that it is processed in the same manner as in Example 1, and The first covered element assembly 41 is obtained. The upper surface of the first temporary fixing piece 10 is exposed from the opening 3'. In addition, the bottom portion 36 (protruding portion) is not formed on the first phosphor layer 2.

In step (3), as shown in FIG. 12B, the second coating layer 4 directly contacts the upper surface of the first temporary fixing sheet 10 at the opening 3 ′.

Then, in step (4), as shown in FIG. 12D, the coated optical semiconductor element 5 cannot be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

(Example corresponding to the second embodiment)

Example 4

In step (3), instead of using the method of differential pressure (step (ii) to step (iv)), the second coating layer 4 is formed by die-forming, except that it is obtained in the same manner as in Example 2. The optical semiconductor element 5 is covered, and a light-emitting device 51 is obtained.

Examples 5 and 6

10 parts by mass of carbon black was blended instead of 10 parts by mass of titanium oxide to prepare the coating material 43, and the coated optical semiconductor element 5 was obtained in the same manner as in Example 2 except that the light-emitting device 51 was obtained.

Example 7

The coating material 43 was prepared without mixing titanium oxide, and the coated optical semiconductor element 5 was obtained in the same manner as in Example 4 except that the light-emitting device 51 was obtained.

Comparative example 2

In step (2), as shown in FIG. 13A, using the cutter 35, the first phosphor layer 2 is provided with an opening 3'penetrating the thickness direction thereof, except that it is processed in the same manner as in Example 7, and The first covered element assembly 41 is obtained. The upper surface of the first temporary fixing piece 10 is exposed from the opening 3'. In addition, the bottom portion 36 (protruding portion) is not formed on the first phosphor layer 2.

In step (3), as shown in FIG. 13B, the second coating layer 4 directly contacts the upper surface of the first temporary fixing sheet 10 at the opening 3 ′.

Then, in step (4), as shown in FIG. 13D, the coated optical semiconductor element 5 cannot be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

(Examples and comparative examples corresponding to the fourth embodiment)

Example 8

In addition to the aspect of preparing the flat first phosphor layer 2 from a phosphor resin composition containing 0.8 mass parts of red phosphor and 100 mass parts of phenyl polysiloxane resin composition, and green phosphor 22 parts by mass and 100 parts by mass of the methyl-based polysiloxane resin composition except for the preparation of the coating material 43 were processed in the same manner as in Example 4 to obtain the coated optical semiconductor element 5 shown in FIG. 9, and The light-emitting device 51 is obtained as shown by the two-dot chain line in FIG. 9.

As shown in FIG. 9, the coated optical semiconductor element 5 includes: an optical semiconductor element 1; a first phosphor layer 2 that contains a red phosphor and a phenyl-based polysiloxane resin composition; and a second phosphor layer 84, It contains a green phosphor and a methyl silicone resin composition.

Comparative Example 3

In step (2), as shown in FIG. 14A, using the cutter 35, the first phosphor layer 2 is provided with an opening 3'penetrating through the thickness direction thereof, except that it is processed in the same manner as in Example 8, and The second coated element assembly 29 is obtained. The upper surface of the first temporary fixing piece 10 is exposed from the opening 3'. In addition, the bottom portion 36 (protruding portion) is not formed on the first phosphor layer 2.

In step (3), as shown in FIG. 14B, the second phosphor layer 84 directly contacts the upper surface of the first temporary fixing sheet 10 at the opening 3 ′.

Then, in step (4), as shown in FIG. 14D, the coated optical semiconductor element 5 cannot be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

(Example corresponding to the sixth embodiment)

Example 9

Except for the preparation of the flat first coating layer 82 from the transparent resin composition containing the phenyl-based silicone resin composition, and 100 parts by mass of the methyl-based silicone resin composition, and the yellow phosphor 15 Except for the preparation of the coating material 43 by mass, the treatment was performed in the same manner as in Example 4 to obtain the coated optical semiconductor element 5 shown in FIG. 11, and then, the light-emitting device 51 was obtained as shown by the two-dot chain line in FIG. 11.

As shown in FIG. 11, the coated optical semiconductor element 5 includes: an optical semiconductor element 1; a first coating layer 82 (transparent layer) containing a phenyl-based polysiloxane resin composition; and a second phosphor layer 84 containing Yellow phosphor and methyl silicone resin composition.

(Evaluation)

Evaluate the following items. These results are described in Table 1 to Table 4.

(For the temporary fixing piece adhesion F1)

In each example and each comparative example, the adhesive force F1 of the 1st covering element assembly 41 with respect to the 1st temporary fixing sheet 10 after ultraviolet irradiation was measured by the 180 degree peel test.

(Adhesion to transfer sheet)

In each example and each comparative example, the adhesive force F1 of the coated optical semiconductor element 5 to the first transfer sheet 27 was measured by a 180-degree peel test.

(Transferability to transfer sheet)

The transferability of the covered optical semiconductor element 5 from the first temporary fixing sheet 10 to the first transfer sheet 27 was evaluated according to the following criteria.

○: The covered optical semiconductor element 5 was successfully transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

×: Failed to transfer the covered optical semiconductor element 5 from the first temporary fixing sheet 10 to the first transfer sheet 27.

(Front brightness)

The front brightness of the light-emitting device 51 is lighted at 300 mA at room temperature using a light distribution measurement system manufactured by Otsuka Electronics Co., Ltd. and a spectroscope MCPDPD-9800.

[0486] An integrating sphere was set at a distance of 316 mm from the LED light source, and when Comparative Example 1 was set to 100, the amount of front light (0° direction) was judged to be 90 or more as ○, which was not reached 90 is judged as ×.

(Visibility)

The visibility of the covered photo-semiconductor element 5 uses an LED light source to produce a display panel of alphabet characters A to Z with a length of 20 mm and a width of 20 mm, and displays arbitrary characters. Read the displayed characters at a distance of 3m. If more than 70 people out of 100 people recognize it, it will be judged as "○". If less than 70 people recognize it, it will be judged as "×".

(Light extraction efficiency)

The light extraction efficiency of the light-emitting device 51 was measured using an integrating sphere manufactured by Otsuka Electronics Co., Ltd. and a spectroscope MCPD-9800 at room temperature and 300 mA, and the total luminous flux was measured and evaluated according to the following criteria.

◎: 105[lm/W] or more

○: 90 [lm/W] or more and less than 105 [lm/W]

[Table 1]

The coated optical semiconductor element obtained by this manufacturing method can be flip-chip mounted on a substrate and used as a light-emitting device.

1‧‧‧Optical semiconductor components

2‧‧‧First phosphor layer (an example of the first coating layer)

3‧‧‧slot

6‧‧‧Protection film

10‧‧‧First temporary fixation film (an example of temporary fixation film)

11‧‧‧Temporary fixed layer

12‧‧‧Support layer

16‧‧‧Vacuum device

17‧‧‧Confined space

18‧‧‧Vacuum chamber

19‧‧‧Vacuum pipeline

20‧‧‧Vacuum pump

21‧‧‧Vacuum valve

22‧‧‧Atmospheric pipeline

23‧‧‧Atmospheric valve

24‧‧‧ chamber space

35‧‧‧Cutting machine

36‧‧‧Bottom

39‧‧‧Vacuum dispenser

40‧‧‧ nozzle

41‧‧‧1st covered component assembly

43‧‧‧Coated material

52‧‧‧Upper 1st phosphor layer

61‧‧‧adhesive layer

62‧‧‧Support film

L0‧‧‧thickness

L1‧‧‧thickness

L2‧‧‧Width

L3‧‧‧Interval

L4‧‧‧thickness

L5‧‧‧thickness

L6‧‧‧Width

L7‧‧‧Depth (distance)

L8‧‧‧thickness (distance)

P‧‧‧spacing

α‧‧‧Distance

Claims (10)

A light-emitting device includes: a substrate; an optical semiconductor element disposed on the substrate and including a side surface; a coating layer disposed on the substrate and covering the side surface; and a phosphor layer including a The first part is disposed between the coating layer and the side surface, and a second part is located between the coating layer and the substrate. The light-emitting device according to claim 1, wherein the coating layer contains a light-reflecting component, a light-absorbing component, or both. The light emitting device of claim 1, wherein the phosphor layer includes a first upper surface, and the coating layer includes a second upper surface, and the first upper surface and the second upper surface are substantially coplanar. The light emitting device of claim 1, wherein the phosphor layer includes a first outermost surface, the coating layer includes a second outermost surface, and the first outermost surface and the second outermost surface are substantially coplanar. The light-emitting device according to claim 1, wherein the coating layer includes a phosphor material. The light-emitting device according to claim 1, wherein the phosphor layer includes a phosphor material having a composition different from that of the coating layer. The light-emitting device according to claim 1, wherein the coating layer includes a third portion covering the first portion, and a fourth portion covering the second portion. The light emitting device according to claim 7, wherein the phosphor layer includes a first outermost surface, the fourth portion includes a second outermost surface, and the first outermost surface and the second outermost surface are substantially common flat. The light-emitting device according to claim 1, wherein the optical semiconductor element includes a first thickness, and the second portion includes a second thickness, and the first thickness is greater than the second thickness. The light-emitting device according to claim 1, wherein the optical semiconductor element includes a first thickness, and the coating layer includes a second thickness, and the second thickness is greater than the first thickness.