TW201633569A - Method for producing covered optical semiconductor element - Google Patents

Abstract

To provide a method for producing a covered optical semiconductor element, which is reliably capable of separating a covered optical semiconductor element from a temporary fixing sheet. A method for producing a covered optical semiconductor element 5, which comprises: a step (1) for preparing a plurality of optical semiconductor elements 1 that are temporarily fixed on the upper surface of a first temporary fixing sheet 10 so as to be separated from each other and a first phosphor layer 2 that covers the plurality of optical semiconductor elements 1 in such a manner that the first phosphor layer 2 is in direct contact with parts of the upper surface of the first temporary fixing sheet 10, said parts being exposed from the plurality of optical semiconductor elements 1; a step (2) for forming a groove 3 in a part of the first phosphor layer 2 positioned between every adjacent optical semiconductor elements 1, said groove 3 being opened at the top; a step (3) for filling at least the groove 3 with a second covering layer 4, thereby obtaining a covered optical semiconductor element 1 that is provided with the optical semiconductor elements 1, the first phosphor layer 2 and the second covering layer 4; and a step (4) for separating the covered optical semiconductor element 1 from the first temporary fixing sheet 10. In the step (3), the first phosphor layer 2 intervenes between the first temporary fixing sheet 10 and the second covering layer 4 filled in the groove 3.

Description

Manufacturing method of coated optical semiconductor element

The present invention relates to a method of fabricating a coated optical semiconductor device.

It has been known that an LED (Light Emitting Diode) covered with a coating layer such as a phosphor layer is attached to a circuit board.

For example, there has been proposed a method in which a ceramic ink in which a phosphor is dispersed is applied to an LED which is aligned at a predetermined interval on an adhesive sheet, and then the ceramic ink is cured, whereby the LED is coated with a ceramic ink layer. Then, the ceramic ink layer between the adjacent LEDs is cut and separated, and then the LED and the ceramic ink layer are peeled off from the adhesive sheet and flip-chip mounted on the circuit board (see, for example, Patent Document 1).

In the method described in Patent Document 1, the ceramic ink layer is further sealed with a transparent resin in a state in which an LED is mounted on a circuit board.

[Previous Technical Literature] [Patent Literature]

Patent Document 1: Japanese Patent Laid-Open Publication No. 2012-39013

However, there is a demand for coating a ceramic ink layer with a sealing resin or the like in a state of being supported by an adhesive sheet. In this case, if the ceramic ink layer in the state supported by the adhesive sheet is sealed with a sealing resin, it is filled with a sealing resin at a gap of the ceramic ink layer which has been cut and separated, and the sealing resin is in direct contact with the adhesive sheet. . So, because of the density Since the adhesive force (adhesive force) of the sealing resin and the adhesive sheet is high, there is a problem that the sealing resin cannot be peeled off from the adhesive sheet together with the LED and the ceramic ink layer.

An object of the present invention is to provide a method of manufacturing a coated optical semiconductor element capable of reliably peeling a coated optical semiconductor element from a temporary fixing sheet.

The present invention [1] includes a method of manufacturing a coated optical semiconductor element, comprising the steps of: (1) preparing a plurality of optical semiconductor elements temporarily fixed to each other at intervals on a temporary fixing sheet, and coating the first one The layer covers the first cladding layer of the plurality of optical semiconductor elements in direct contact with the upper surface of the temporary fixing sheet exposed from the plurality of optical semiconductor elements; and the step (2) is performed on the adjacent optical semiconductor component The first coating layer is provided with a groove that opens upward; and in the step (3), the second coating layer is filled in at least the groove to obtain the optical semiconductor element, the first coating layer, and the second a coating layer covering the optical semiconductor element; and a step (4) of peeling off the coated optical semiconductor element from the temporary fixing sheet; and in the step (3), the first coating layer is filled in the groove The second coating layer is interposed between the temporary fixing sheet.

According to this method, in the step (3), since the first coating layer is interposed between the second coating layer filled in the groove and the temporary fixing piece, the second coating layer is prevented from coming into direct contact with the fixing piece. Therefore, even if the adhesion of the second coating layer is high, the second coating layer and the temporary fixing sheet can be prevented from coming next.

As a result, in the step (4), the coated optical semiconductor element can be surely peeled off from the temporary fixing sheet.

The method of manufacturing a coated optical semiconductor device according to the above [1], wherein the coated optical semiconductor element is transferred from the temporary fixing sheet to the transfer sheet in the step (4), The adhesion of the coated optical semiconductor element to the transfer sheet is higher than the adhesion of the coated optical semiconductor element to the temporary fixing sheet.

According to this method, since the adhesion force of the coated optical semiconductor element with respect to the transfer sheet is higher than the adhesion force of the coated optical semiconductor element with respect to the temporary fixing sheet, in step (4), the coated optical semiconductor element can be more reliably fixed by the temporary fixing. The sheet is transferred to the transfer sheet.

The method of manufacturing a coated optical semiconductor device according to the above aspect of the invention, wherein the first coating layer contains a first phosphor layer of a phosphor.

According to this method, since the first coating layer contains the first phosphor layer of the phosphor, the light emitted from the optical semiconductor element can be wavelength-converted by the first phosphor layer.

The invention of claim 4, wherein in the step (3), the second coating is exposed such that an upper surface of the first phosphor layer is exposed. The layer is filled into the above tank.

In this method, since the coating layer is filled in the groove so that the upper surface of the first phosphor layer is exposed in the step (3), the coated photo-semiconductor emitting light having the upward directivity can be obtained. element.

The method of manufacturing a coated optical semiconductor device according to the above [3], wherein in the step (3), the second cladding layer is filled to cover the upper surface of the first cladding layer. To the above slot.

In this method, since the coating layer is filled in the groove so as to cover the upper surface of the first phosphor layer, a coated optical semiconductor element excellent in optical characteristics can be obtained.

The method of manufacturing a coated optical semiconductor device according to any one of the above aspects of the present invention, wherein the second coating layer contains a second phosphor layer of a phosphor.

In this method, since the second coating layer contains the second phosphor layer of the phosphor, the light emitted from the optical semiconductor element can be wavelength-converted by the second phosphor layer.

The method of manufacturing a coated optical semiconductor device according to the above aspect, wherein the second coating layer is applied to cover an upper surface of the second phosphor layer in the step (3) Fill into the above tank.

In the method, in the step (3), the surface of the second phosphor layer is exposed In this manner, the coating layer is filled in the groove, so that the coated optical semiconductor element that emits light having upward directivity can be obtained.

According to the invention, in the step (4), the coated optical semiconductor element can be surely peeled off from the temporary fixing sheet.

1‧‧‧Optical semiconductor components

2‧‧‧1st phosphor layer (an example of the first coating layer)

3‧‧‧ slots

3'‧‧‧ openings

4‧‧‧2nd coating

5‧‧‧covered optical semiconductor components

6‧‧‧Protection film

10‧‧‧1st temporary fixing piece (one example of temporary fixing piece)

11‧‧‧ Temporary fixed layer

12‧‧‧Support layer

16‧‧‧Vacuum device

17‧‧‧Confined space

18‧‧‧vacuum chamber

19‧‧‧vacuum pipeline

20‧‧‧vacuum pump

21‧‧‧Vacuum valve

22‧‧‧Atmospheric pipeline

23‧‧‧Atmospheric valve

24‧‧‧Case space

27‧‧‧Transfer film

29‧‧‧2nd covering element assembly

34‧‧‧ Space (chamber space)

35‧‧‧Cutting machine

36‧‧‧ bottom

37‧‧‧1st transfer sheet (one example of temporary fixing piece)

38‧‧‧Second transfer sheet (an example of a transfer sheet)

39‧‧‧Vacuum dispenser

40‧‧‧ nozzle

41‧‧‧1st covering element assembly

43‧‧‧Cover materials

45‧‧‧Protruding

46‧‧‧ recess

50‧‧‧Substrate

51‧‧‧Lighting device

52‧‧‧Upper first phosphor layer

61‧‧‧Adhesive layer

62‧‧‧Support tablets

82‧‧‧1st coating

83‧‧‧1st coating on the upper side

84‧‧‧Second phosphor layer (an example of the second coating layer)

H1‧‧‧ thickness

H2‧‧‧ thickness

L0‧‧‧ thickness

L1‧‧‧ thickness

L2‧‧‧Width

L3‧‧‧ interval

L4‧‧‧ thickness

L5‧‧‧ thickness

L6‧‧‧Width

L7‧‧‧depth (distance)

L8‧‧‧ thickness (distance)

L9‧‧‧ thickness

P‧‧‧ spacing

Z‧‧‧thickness

Y‧‧‧thickness

‧‧‧‧ distance

‧‧‧‧Width (length)

1A to 1E are manufacturing steps of a first embodiment of a method of manufacturing a coated optical semiconductor device according to the present invention, wherein FIG. 1A shows a step of arranging a plurality of optical semiconductor elements on a temporary fixing sheet, and FIG. 1B shows a step of using a first fluorescent element. Step (1) of coating a plurality of optical semiconductor elements in the photo-layer, FIG. 1C shows a step (2) of providing a first phosphor layer between adjacent optical semiconductor elements, and FIG. 1D shows that the protective sheet is placed on the first Step (i) of the upper surface of the phosphor layer, FIG. 1E shows a step (ii) of disposing the temporary fixing sheet, the optical semiconductor element, the first phosphor layer and the protective sheet under vacuum, and arranging the covering material to form a sealed space. Step (iii).

2F to FIG. 2I are manufacturing steps of the first embodiment of the method for manufacturing a coated optical semiconductor device according to the present invention, and FIG. 2F shows a step (iv) of flowing the covering material into the sealed space, and FIG. 2G shows Step (v) of peeling off the protective sheet, Fig. 2H shows a step of singulating the optical semiconductor element, and Fig. 2I shows a step (4) of transferring the coated optical semiconductor element to the transfer sheet.

3A to 3C are plan views of the steps of the first embodiment, FIG. 3A is a plan view of step (i) corresponding to FIG. 1D, FIG. 3B is a plan view of step (ii) corresponding to FIG. 1E, and FIG. 3C is a view of FIG. Figure 2F corresponds to a top view of step (iii).

Fig. 4 shows a step of mounting the coated optical semiconductor element shown in Fig. 2I on a substrate.

5A to 5C are manufacturing steps of a second embodiment of the method for manufacturing a coated optical semiconductor device according to the present invention, and FIG. 5A shows a step (1) of coating a plurality of optical semiconductor elements with a first phosphor layer, and FIG. 5B shows The first fluorescent light between adjacent optical semiconductor elements Step (2) of providing a groove in the body layer, and FIG. 5C shows a step (3) of filling the second coating layer into the groove to cover the upper first phosphor layer.

6D and FIG. 6E are manufacturing steps of the second embodiment of the method for manufacturing a coated optical semiconductor device according to the present invention, and FIG. 6D shows a step of singulating the optical semiconductor element, and FIG. 6E shows that the light is to be covered. The step (4) of transferring the semiconductor element to the transfer sheet.

Fig. 7 shows a step of mounting the coated optical semiconductor element shown in 6E on a substrate.

Fig. 8 is a cross-sectional view showing a coated optical semiconductor device obtained by the manufacturing method of the third embodiment.

Fig. 9 is a cross-sectional view showing a coated optical semiconductor element obtained by the manufacturing method of the fourth embodiment.

Fig. 10 is a cross-sectional view showing a coated optical semiconductor element obtained by the manufacturing method of the fifth embodiment.

Fig. 11 is a cross-sectional view showing a coated optical semiconductor element obtained by the manufacturing method of the sixth embodiment.

12A to 12D are manufacturing steps of the coated optical semiconductor device of Comparative Example 1, wherein FIG. 12A shows a step (2) of providing an opening in the first phosphor layer, and FIG. 12B shows a step of providing a second coating layer (3). 12C shows a step of cutting the second coating layer, and FIG. 12D shows a step (4) of transferring the coated optical semiconductor element to the transfer sheet.

13A to 13D are manufacturing steps of the coated optical semiconductor device of Comparative Example 2, wherein FIG. 13A shows a step (2) of providing an opening in the first phosphor layer, and FIG. 13B shows a step of providing a second covering layer (3). 13C shows a step of cutting the second coating layer, and FIG. 13D shows a step (4) of transferring the coated optical semiconductor element to the transfer sheet.

14A to 14D are manufacturing steps of the coated optical semiconductor device of Comparative Example 3, wherein FIG. 14A shows a step (2) of providing an opening in the first cladding layer, and FIG. 14B shows a step of providing a second phosphor layer (3). 14C shows a step of cutting the second phosphor layer, and FIG. 14D shows a step (4) of transferring the coated photo-semiconductor element to the transfer sheet.

15A to 15D are manufacturing steps of a seventh embodiment of a method of manufacturing a coated optical semiconductor device according to the present invention, wherein FIG. 15A shows a step of arranging a plurality of optical semiconductor elements on a temporary fixing sheet, and FIG. 15B shows a step of using a first fluorescent element. Step (1) of coating a plurality of optical semiconductor elements in a light body layer, FIG. 15C shows a step of transferring the first covering element assembly to the first transfer sheet, and FIG. 15D shows a step of providing grooves in the first phosphor layer (2) ).

16E to FIG. 16G are manufacturing steps of a seventh embodiment of the method for manufacturing a coated optical semiconductor device according to the present invention, and FIG. 16E shows a step (3) of filling the second coating layer into the groove. 16F shows a step of singulating the optical semiconductor element, and FIG. 16G shows a step of removing the upper end portion of the second cladding layer 4.

Fig. 17 shows a step of mounting the coated optical semiconductor element shown in Fig. 16G on a substrate.

18A and FIG. 18B are manufacturing steps of an eighth embodiment of the method for manufacturing a coated optical semiconductor device according to the present invention, wherein FIG. 18A shows a step of transferring the coated optical semiconductor element to the second transfer sheet, and FIG. 18B shows a step of removing the second transfer sheet. 1 The step of the bottom of the phosphor layer.

Fig. 19 shows a step of mounting the coated optical semiconductor element shown in Fig. 18B on a substrate.

In 1A to 2I, the upper and lower sides of the paper are in the up-and-down direction (first direction, thickness direction), the upper side of the paper is the upper side (the first direction side, the thickness direction side), and the lower side of the paper surface is the lower side (the first direction is another One side, the other side of the thickness direction). The left-right direction of the paper surface is the left-right direction (the second direction orthogonal to the first direction), the left side of the paper surface is the left side (the second direction side), and the right side of the paper surface is the right side (the other side in the second direction). The paper thickness direction is the front-back direction (the third direction orthogonal to the first direction and the second direction), the front side of the paper surface is the front side (the third direction side), and the back side of the paper surface is the rear side (the other side in the third direction). Specifically, the direction arrows are used in accordance with the respective figures.

<First embodiment>

1. Manufacturing method of coated optical semiconductor element

A first embodiment of the method for producing a coated optical semiconductor device according to the present invention includes the step (1) of preparing a temporary fixing of the upper surface of the first temporary fixing piece 10 as an example of a temporary fixing piece. The plurality of optical semiconductor elements 1 and the first coating layer in which the plurality of optical semiconductor elements 1 are covered in direct contact with the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1 a phosphor layer 2 (see FIGS. 1A and 1B); and a step (2) of providing a groove 3 that opens upward in the first phosphor layer 2 between the adjacent optical semiconductor elements 1 (see FIG. 1C); (3) The second coating layer 4 is filled in the groove 3, and the coated optical semiconductor element 5 including the optical semiconductor element 1, the first phosphor layer 2, and the second cladding layer 4 is obtained (see FIG. 1D to FIG. 2H). And the step (4) of transferring the coated optical semiconductor element 5 from the first temporary fixing sheet 10 to the first transfer sheet 27 (see FIG. 2I).

Hereinafter, each step will be described in order.

1-1. Step (1)

As shown in FIG. 1A and FIG. 1B, in the step (1), a plurality of optical semiconductor elements 1 and a first phosphor layer 2 are prepared. In other words, a plurality of optical semiconductor elements 1 that are temporarily fixed at intervals on the upper surface of the first temporary fixing sheet 10, and a first temporary fixing in which the first phosphor layer 2 and the plurality of optical semiconductor elements 1 are exposed are formed. The first phosphor layer 2 of the plurality of optical semiconductor elements 1 is coated in such a manner that the upper surface of the sheet 10 is in direct contact with each other.

More specifically, as shown in FIG. 1A, in the step (1), first, a plurality of optical semiconductor elements 1 are temporarily fixed at intervals on the upper surface of the first temporary fixing sheet 10.

The optical semiconductor element 1 is an optical semiconductor element that converts electrical energy into light energy. The optical semiconductor element does not include a rectifier such as a transistor which is different from the optical semiconductor element in the technical field. The optical semiconductor element 1 has, for example, a thickness (the maximum length in the vertical direction) shorter than the surface length (specifically, the length in the left-right direction and the length in the front-rear direction) is substantially rectangular in cross section and substantially rectangular in plan view. A portion of the lower surface of the optical semiconductor element 1 is formed by a bump (not shown). The bump is formed as a terminal on the upper surface of the substrate 50 (refer to FIG. 4, described below) (FIG. 4) Not shown in the figure) Electrical connection.

Specific examples of the optical semiconductor element 1 include blue LEDs (light emitting diode elements) that emit blue light.

The thickness (length in the vertical direction) L1 of the optical semiconductor element 1 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 1000 μm or less, or preferably 500 μm or less. The width (length in the left-right direction and length in the front-rear direction) L2 of the optical semiconductor element 1 is, for example, 0.1 μm or more, preferably 0.2 μm or more, and is, for example, 5000 μm or less, or preferably 2000 μm or less.

The first temporary fixing piece 10 is for temporarily fixing a plurality of optical semiconductor elements 1, and thereafter, a plurality of optical semiconductor elements 1 are collectively covered and sealed by the first phosphor layer 2, and then first. The phosphor layer 2 forms a support member for the groove 3.

The first temporary fixing piece 10 includes a temporary fixing layer 11 and a support layer 12 .

The temporary fixing layer 11 is provided on the upper portion of the temporary fixing layer 11 in order to temporarily fix the plurality of optical semiconductor elements 1. The temporary fixing layer 11 has an adhesive layer, and the adhesive layer is formed, for example, by a substantially flat plate shape extending in the left-right direction and the front-back direction by an adhesive. Examples of the pressure-sensitive adhesive include an adhesive which is reduced in adhesion by treatment (specifically, irradiation of an active energy ray or the like). Further, the temporary fixing layer 11 may have one adhesive layer and a base material (not shown) provided on the lower surface of the adhesive layer. Further, the temporary fixing layer 11 may have two adhesive layers and a substrate (not shown) interposed therebetween. Further, the thickness of the temporary fixing layer 11 is, for example, 5 μm or more, preferably 10 μm or more, and is, for example, 200 μm or less, preferably 150 μm or less.

The support layer 12 is provided on the lower surface of the temporary fixing layer 11 in order to support the temporary fixing layer 11. Examples of the support layer 12 include a polymer film such as a polyethylene film or a polyester film (PET (polyethylene terephthalate)), for example, a ceramic sheet, for example, a metal foil. A polymer film is preferably exemplified. The thickness of the support layer 12 is, for example, 1 μm or more, preferably 10 μm or more, and further, for example, 2000 μm. Next, it is preferably 1000 μm or less.

Then, a plurality of optical semiconductor elements 1 are temporarily fixed to each other on the upper surface of the first temporary fixing sheet 10 with a space therebetween. Specifically, on the upper surface of the temporary fixing layer 11, a plurality of optical semiconductor elements 1 are arranged in alignment in the left-right direction and the front-rear direction. More specifically, the lower surface of the plurality of optical semiconductor elements 1 is brought into contact with the upper surface of the temporary fixing layer 11 of the first temporary fixing sheet 10.

The interval L3 between the adjacent optical semiconductor elements 1 is, for example, 0.1 mm or more, preferably 0.3 mm or more, and is, for example, 3 mm or less, preferably 2 mm or less. For example, the distance P between the plurality of optical semiconductor elements 1 and the width L2 of one optical semiconductor element 1 and the interval L3 between the optical semiconductor elements 1 and the optical semiconductor elements 1 adjacent thereto are equal to, for example, P(=L2+L3). 0.3 mm or more, preferably 0.5 mm or more, and further, for example, 5 mm or less, preferably 3 mm or less.

As shown in FIG. 1B, the first phosphor layer 2 is coated with a plurality of first phosphor layers 2 in direct contact with the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1. Optical semiconductor component 1.

When a plurality of optical semiconductor elements 1 are coated by the first phosphor layer 2, first, the first phosphor layer 2 is prepared.

The first phosphor layer 2 has a size including a plurality of optical semiconductor elements 1 in plan view, and has a substantially rectangular flat plate shape. The first phosphor layer 2 converts a portion of the blue light emitted from the optical semiconductor element 1 into a wavelength conversion layer such as yellow light, red light, or green light. The first phosphor layer 2 contains a phosphor resin composition.

The phosphor resin composition contains a phosphor and a transparent resin composition.

Examples of the phosphor include a yellow phosphor that converts blue light into yellow light, a red phosphor that converts blue light into red light, and a green phosphor that converts blue light into green light. Wait.

Examples of the yellow phosphor include bismuth silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ and Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium ruthenate (BOS)). For example, pomegranate having a garnet-type crystal structure such as Y ₃ Al ₅ O ₁₂ :Ce (YAG (yttrium aluminum garnet):Ce), Tb ₃ Al ₃ O ₁₂ :Ce (TAG (yttrium aluminum garnet):Ce) A stone-type phosphor, for example, an oxynitride phosphor such as Ca-α-SiAlON.

Examples of the red phosphor include a nitride phosphor such as CaAlSiN ₃ :Eu or CaSiN ₂ :Eu.

Examples of the green phosphor include garnet-type phosphors such as Lu ₃ Al ₅ O ₁₂ :Ce (LuAG: yttrium aluminum garnet).

Among such phosphors, a yellow phosphor alone or a combination of a red phosphor and a green phosphor can be preferably used.

Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. From the viewpoint of fluidity, a spherical shape can be preferably exemplified.

The average value of the maximum length of the phosphor (the average particle diameter in the case of a spherical shape) is, for example, 0.1 μm or more, preferably 1 μm or more, and is, for example, 200 μm or less, preferably 100 μm or less.

The blending ratio of the phosphor is, for example, 0.1 part by mass or more, preferably 0.5 part by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass or less, based on 100 parts by mass of the transparent resin composition. In addition, the blending ratio of the phosphor is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, for example, 90% by mass or less, and preferably 80% by mass or less.

The transparent resin composition is, for example, a transparent resin composition used as a sealing material for sealing the optical semiconductor element 1. Specifically, examples of the transparent resin composition include a thermosetting resin composition and a thermoplastic resin composition, and a thermosetting resin composition is preferably used.

The thermosetting resin composition is, for example, a two-stage reaction curable resin composition and a one-stage reaction curable resin composition.

The two-stage reaction curable resin composition has two reaction mechanisms, and can be subjected to B-stage (semi-hardening) from the A-stage state in the first-stage reaction, and then, in the second-stage reaction, from the B-stage state. Perform C-stage (complete hardening). In other words, the two-stage reaction curable resin composition is a thermosetting resin composition which can be in a B-stage state by moderate heating conditions. Among them, the two-stage reaction curable resin composition may be maintained in the B-stage state from the A-stage state by the heating of the strength, and may become the C-stage state once. Further, the B-stage state thermosetting resin composition is in a state between a liquid A-stage state and a fully-hardened C-stage state, and is slightly hardened and gelled, and the compression elastic modulus is smaller than the C-stage state. The semi-solid or solid state of the modulus of elasticity.

The one-stage reaction curable resin composition has one reaction mechanism, and in the first stage reaction, it can be C-staged (completely hardened) from the A-stage state. In addition, the one-stage reaction curable resin composition contains a thermosetting resin composition which can be stopped in the middle of the reaction in the first stage, and becomes a B-stage state from the A-stage state, and is followed by Further heating, restarting the reaction of the first stage, and performing C-stage (complete hardening) from the B-stage state. In other words, the thermosetting resin composition can be a thermosetting resin composition in a B-stage state. On the other hand, the one-stage reaction curable resin composition contains the following thermosetting resin composition, which cannot be controlled so as to stop in the middle of the first-stage reaction, that is, it cannot be in the B-stage state, but once in the A-stage state. Perform C-stage (complete hardening).

Examples of the transparent resin composition include a polyoxyxylene resin, an epoxy resin, a urethane resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, and an unsaturated polyester resin. As the transparent resin composition, a polyfluorene oxide resin is preferably exemplified.

The above transparent resin composition may be either the same or a plurality of types.

From the viewpoint of transparency, durability, heat resistance, and light resistance, the polyoxygen resin may, for example, be an addition reaction-curable polydecane resin composition, a condensation, or an addition reaction-curable polyoxyl resin. A polyoxyxylene resin composition such as a composition. Polyoxyl resin can be single Used alone or in combination.

The addition reaction-curable polydecane resin composition is a one-stage reaction curable resin composition, and includes, for example, an alkenyl group-containing polysiloxane, a hydroalkylene group-containing polyoxyalkylene, and a ruthenium hydrogenation catalyst.

Specifically, for example, the phenyl-based polyoxyxene resin composition which can be a one-stage reaction curable resin composition in a B-stage state, for example, is used as the addition reaction-curable polyoxynene resin composition. The methyl-based polyoxyxene resin composition of the one-stage reaction curable resin composition in the B-stage state cannot be obtained. A phenyl-based polyoxymethylene resin composition is preferably exemplified.

For example, the addition reaction-curable polydecane resin composition described in JP-A-2015-073084 or the like can be used.

The condensing and addition-reaction-hardening type of the polyoxymethylene resin composition is a two-stage reaction-curable resin, and, for example, JP-A-2010-265436, JP-A-2013-187227, and the like are mentioned. The first to eighth condensation and addition reaction-curable polyoxyxylene resin compositions are described, for example, Japanese Patent Laid-Open No. 2013-091705, Japanese Patent Laid-Open Publication No. 2013-001815, and Japanese Patent Laid-Open No. 2013-001814 The cage-type sesquioxaxane-containing polyfluorene oxide resin composition described in Japanese Laid-Open Patent Publication No. 2012-102167, and the like.

Further, the addition reaction-curable polydecane resin composition and the condensation and addition reaction-curable polyoxyxene resin composition are solid and have both thermoplasticity and thermosetting properties.

Further, in the phosphor resin composition, a pigment (including a filler), a decane coupling agent, an anti-aging agent, a modifier, a surfactant, a dye, an anti-tarnishing agent, and an ultraviolet absorber may be added in an appropriate ratio as needed. And other known additives.

Further, the first phosphor layer 2 can be supported and protected by a release sheet (not shown).

For the release sheet (not shown), the photo-semiconductor element is sealed by the first phosphor layer 2 In order to protect the first phosphor layer 2, the first phosphor layer 2 is detachably bonded to the back surface of the first phosphor layer 2 (the upper surface in FIG. 1A). Examples of the release sheet (not shown) include a polymer film such as a polyethylene film or a polyester film (PET or the like), for example, a ceramic sheet, for example, a metal foil. A polymer film is preferably exemplified. The thickness of the release sheet (not shown) is, for example, 1 μm or more, preferably 10 μm or more, and is, for example, 2000 μm or less, preferably 1,000 μm or less.

When the first phosphor layer 2 contains a phenyl-based polyoxynoxy resin composition (a one-stage reaction curable resin composition (addition reaction-curing type polyoxyxyloxy resin composition)), an alkenyl group and a hydroquinone group are used. Thereafter, the hydrogenation reaction proceeds to the middle and is temporarily stopped.

The thickness L0 of the first phosphor layer 2 before coating the optical semiconductor element 1 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 2000 μm or less, or preferably 1000 μm or less.

Thereafter, the first phosphor layer 2 is pressure-bonded to the plurality of optical semiconductor elements 1 and the first temporary fixing sheets 10. Preferably, the first phosphor layer 2 is thermocompression bonded (hot pressed) to the release sheet 6 supporting the plurality of optical semiconductor elements 1.

Specifically, first, the first phosphor layer 2, the plurality of optical semiconductor elements 1 and the first temporary fixing sheet 10 are provided in a flat press having a heat source. The flat press is not limited, but has a mold having a flat upper surface and a mold disposed on the upper side of the lower mold and having a flat lower surface.

Then, the first phosphor layer 2, the plurality of optical semiconductor elements 1 and the first temporary fixing sheets 10 are hot-pressed by a flat plate press.

In the case where the first phosphor layer 2 contains an addition reaction-curable polydecane resin composition, the temperature of the plate press is the thermoplastic temperature of the addition reaction-curable polyoxyn resin composition or the like. From the viewpoint of performing thermoplasticization and thermal curing of the addition reaction-curable polyoxyxene resin composition at one time, it is preferably a heat curing temperature or higher, specifically, for example, 60 ° C or higher, preferably 80 ° C. The above, for example, is 150 ° C or lower, preferably 120 Below °C.

The pressurization time is, for example, 1 minute or longer, preferably 5 minutes or longer, and for example, 60 minutes or shorter, preferably 20 minutes or shorter.

When the first phosphor layer 2 contains a thermoplastic or thermosetting phenyl-based polyoxyxene resin composition by the above-described hot pressing, the first phosphor layer 2 is plasticized. Then, a plurality of optical semiconductor elements 1 are buried by the first phosphor layer 2 after plasticization.

At this time, as shown in FIG. 1B, the first phosphor layer 2 is in direct contact with the upper surface of the temporary fixing layer 11 exposed from the plurality of optical semiconductor elements 1. In other words, the first phosphor layer 2 is in direct contact with the upper surface and the side surface of the optical semiconductor element 1 and the upper surface of the temporary fixing layer 11 exposed from the temporary fixing layer 11.

Thereby, as shown in FIG. 1B, a plurality of optical semiconductor elements 1 are sealed by one first phosphor layer 2.

In this state, the first covering element assembly 41 including the plurality of optical semiconductor elements 1 and the one first phosphor layer 2 is obtained in a state of being temporarily fixed to the first temporary fixing sheet 10.

As shown in FIG. 1B, in the first covering element assembly 41, the upper surface of the first phosphor layer 2 has a flat surface along the surface direction.

Further, in the first covering element assembly 41, the lower surfaces of the plurality of optical semiconductor elements 1 are in direct contact (temporarily fixed) on the upper surface of the temporary fixing sheet 10.

The thickness L4 of the first phosphor layer 2 (upper first phosphor layer 52) located on the upper side of the optical semiconductor element 1 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 1000 μm or less, or preferably 500 μm or less. More preferably, it is 300 μm or less. The thickness L5 of the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is, for example, 15 μm or more, preferably 50 μm or more, and is, for example, 2000 μm or less, or preferably 1500 μm or less.

1-2. Step (2)

As shown in FIG. 1C, in the step (2), the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with a groove 3 which is opened upward.

The groove 3 has a substantially checkerboard shape (substantially a trapezoidal shape) in plan view to partition each of the plurality of optical semiconductor elements 1.

Specifically, the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is half-cut by a cutting device such as a cutter 35. In other words, the upper end portion of the first phosphor layer 2 located at the center between the adjacent optical semiconductor elements 1 and the upper portion in the vertical direction are cut. In other words, the lower end portion of the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is not cut and left.

Specifically, the cutting device enters the upper surface of the first phosphor layer 2 from the upper side of the first phosphor layer 2, and then ends the cutting before the cutting device reaches the lower surface of the first phosphor layer 2. Stop before).

Thereby, the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with the groove 3 opened upward.

Further, the bottom portion 36 is provided in the first phosphor layer 2 by providing the groove 3. The bottom portion 36 is a protruding portion that protrudes outward in the plane direction from the side surface of the first phosphor layer 2 that faces the optical semiconductor element 1. The upper surface of the bottom portion 36 is held in a position in which the portion of the first phosphor layer 2 covering the upper surface of the optical semiconductor element 1 is lowered downward by a portion, so that the upper surface of the bottom portion 36 and the upper surface of the portion There is a step difference between them.

The width L6 of the groove 3 is set in accordance with the thickness of the cutter 35, and is specifically, for example, 10 μm or more, preferably 15 μm or more, and further, for example, 1000 μm or less, preferably 500 μm or less.

The depth L7 of the groove 3 is, for example, 50 μm or more, preferably 75 μm or more, more preferably 100 μm or more, and further, for example, 2000 μm or less.

The thickness L8 of the bottom portion 36 (the distance from the upper surface of the temporary fixing layer 11 to the upper surface of the bottom portion 36) is, for example, 5 μm or more, preferably 10 μm or more, more preferably 25 μm or more, and further, for example, 200 μm or less, preferably 75 μm. the following. When the thickness of the thickness L8 of the bottom portion 36 is equal to or higher than the above lower limit, it is allowed to enter the cutting device (specifically, the cutter 35 or the like). The accuracy of the depth of the first phosphor layer 2 is set to be large, for example, at least about 10 μm.

When the thickness of the thickness L8 of the bottom portion 36 is equal to or less than the above upper limit, it is possible to suppress the light from leaking to the side and to increase the brightness (front luminance) upward.

The distance α between the inner side surface of the groove 3 and the side surface of the optical semiconductor element 1 is, for example, 50 μm or more, preferably 100 μm or more, and is, for example, 2000 μm or less, preferably 1,000 μm or less.

1-3. Step (3)

As shown in FIGS. 1D to 2H, in the step (3), the second cladding layer 4 is filled in the groove 3.

The method of filling the second cladding layer 4 into the trench 3 includes, for example, the following step: step (i) of disposing the protective sheet 6 on the upper surface of the first phosphor layer 2 (refer to FIG. 1D); step (ii), The first temporary fixing piece 10, the optical semiconductor element 1, the first phosphor layer 2, and the protective sheet 6 are disposed under vacuum (see FIG. 1E); and the step (iii) is to surround the periphery of the first covering element assembly 41. In this manner, the covering material 43 is brought into contact with the first temporary fixing piece 10 and the protective sheet 6 to form a sealed space 17 (see FIG. 1E), and the step (iv) is performed to allow the covering material 43 to flow into the sealed space 17 (refer to FIG. 2F). And step (v), which peels off the protective sheet 6 (refer to FIG. 2G). Steps (i) to (v) are carried out in sequence.

1-3-1. Step (i)

As shown in FIG. 1D and FIG. 3A, in the step (i), the protective sheet 6 is disposed on the upper surface of the upper first phosphor layer 52. At this time, the protective sheet 6 is disposed so as to close the upper end of the groove 3 but not to fill the groove 3.

The protective sheet 6 has a substantially rectangular flat plate shape including the first covering element assembly 41 when projected in the thickness direction. Moreover, when the protective sheet 6 is projected in the thickness direction, it has a substantially rectangular flat plate shape included in the first temporary fixing piece 10. Specifically, the protective sheet 6 has a size larger than that of the first covering member assembly 41 and has a size smaller than that of the first temporary fixing sheet 10.

The protective sheet 6 is used in the following step (iii) (see FIGS. 2F and 3C) to prevent the covering material 43 from covering the upper surface of the upper first phosphor layer 52 and the upper first phosphor layer 52. The exposed surface of the sheet. The protective sheet 6 is an adhesive sheet which is detachable from the coated optical semiconductor element 5.

The protective sheet 6 is provided with an adhesive layer 61 and a support sheet 62 that supports the adhesive layer 61.

The adhesive layer 61 is formed, for example, by an adhesive to have a substantially flat plate shape.

Examples of the pressure-sensitive adhesive include an adhesive which is reduced in adhesion by treatment (specifically, irradiation of an active energy ray or the like).

As such an adhesive, a resin composition into which a carbon-carbon double bond is introduced, etc. are mentioned, for example. The resin composition may, for example, be a polymer having a carbon-carbon double bond.

Such a polymer is produced, for example, by the following method.

That is, for example, a monomer having a first functional group is copolymerized by copolymerizing a monomer component containing a main vinyl monomer and a secondary vinyl monomer having a first functional group so that the first functional group does not disappear. polymer. Further, a second functional group reactive with the first functional group and a compound having a carbon-carbon double bond are prepared. Thereafter, the compound is formulated into a precursor polymer to react the first functional group with the second functional group.

The combination of the first functional group and the second functional group may, for example, be a combination of a hydroxyl group and an isocyanate group. The hydroxyl group is preferably exemplified as the first functional group. The isocyanate group is preferably exemplified as the second functional group.

Examples of the main monomer include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, and n-butyl (meth)acrylate. , isobutyl (meth)acrylate, second butyl (meth)acrylate, amyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, (meth)acrylic acid Heptyl ester, 2-ethylhexyl (meth)acrylate (2EHA/2EHMA), octyl (meth)acrylate, isooctyl (meth)acrylate, decyl (meth)acrylate, (meth)acrylic acid Isodecyl ester, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, (methyl) Dodecyl acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, cetyl (meth) acrylate a carbon of an alkyl moiety such as heptadecyl (meth) acrylate, octadecyl (meth) acrylate, pentadecyl (meth) acrylate or eicosyl (meth) acrylate The number is 1 to 20 alkyl (meth)acrylate. Preferably, 2-ethylhexyl acrylate (2EHA) is exemplified. These may be used alone or in combination. The blending ratio of the main monomer to the monomer component is, for example, 70% by mass or more, preferably 90% by mass or more, and for example, 99% by mass or less.

A vinyl monomer in which a secondary vinyl monomer system can be copolymerized with a primary vinyl monomer. Examples of the secondary vinyl monomer include a carboxyl group-containing monomer, an epoxy group-containing monomer, a hydroxyl group-containing monomer, and an isocyanate group-containing monomer, and a hydroxyl group-containing monomer is preferable.

Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate (2-HEA/HEMA), 2-hydroxypropyl (meth)acrylate, and 3-hydroxypropyl (meth)acrylate. And a hydroxyalkyl (meth)acrylate such as 2-hydroxybutyl (meth)acrylate. Preferably, 2-hydroxyethyl acrylate (2-HEA) is exemplified. These may be used alone or in combination. The blending ratio of the secondary vinyl monomer to the monomer component is, for example, 30% by mass or less, and is, for example, 1% by mass or more.

The compound may, for example, be an isocyanate group-containing compound, and specific examples thereof include (meth)acryloyl isocyanate, 2-(meth)acryloxyethyl isocyanate, and m-isopropenyl-α, α-. An isocyanate group-containing vinyl monomer such as dimethylbenzyl isocyanate. A methacryloxyethyl isocyanate is preferably exemplified.

The compounding ratio of the compound is, for example, 0.01 mol/g or more, and preferably 0.2 mmol/g or more, of the introduction amount of the double bond in the polymer. Further, for example, it is adjusted to be 10.0 mmol/g or less, preferably 5.0 mmol/g or less.

In the preparation of the precursor polymer, the above monomer component is subjected to solution polymerization, for example, in the presence of a polymerization initiator in the above ratio.

Examples of the polymerization initiator include peroxide, persulfate, and oxidation. The original initiator and the like. These may be used alone or in combination. A peroxide is preferably exemplified. Examples of the peroxide include dioxane peroxide, peroxyester, peroxydicarbonate, monoperoxycarbonate, peroxyketal, dialkyl peroxide, hydrogen peroxide, and ketone peroxide. Preferably, dioxane is exemplified.

Examples of the ruthenium peroxide include, for example, benzamidine peroxide (BPO), di-p-nitrobenzoic acid peroxide, di-p-chlorobenzothymidine peroxide, and di-peroxide (3,5,5-three). Methyl hexanide), di-n-octyl peroxide, dioxane peroxide, dilaurin peroxide, and the like. Benzoyl peroxide (BPO) can be preferably exemplified.

The blending ratio of the polymerization initiator is, for example, 0.005 parts by mass or more, for example, 1 part by mass or less based on 100 parts by mass of the monomer component.

Further, a polymerization solvent can be used for the solution polymerization. Examples of the polymerization solvent include aromatic hydrocarbons such as toluene and xylene, and aliphatic hydrocarbons such as hexane. An aromatic hydrocarbon can be preferably exemplified.

Then, the first functional group containing the primary vinyl monomer and the secondary vinyl monomer are copolymerized so that the first functional group of the secondary vinyl monomer does not disappear, thereby preparing the first functional group precursor polymer. .

Then, in the precursor polymer, the above compound is formulated. Preferably, in the hydroxyl group-containing precursor polymer, a compound containing an isocyanate group is formulated to react a hydroxyl group with an isocyanate group to form a urethane bond. Then, a carbon-carbon double bond possessed by the compound is introduced into the obtained polymer.

Thereafter, a photopolymerization initiator is formulated in the polymer.

The photopolymerization initiator is a photopolymerization catalyst for use in the following step (v) (refer to FIG. 2G) to generate a radical upon irradiation of the active energy ray to the adhesive layer 61, thereby introducing the resin composition into the resin composition. The carbon-carbon double bonds in the reaction react with each other. The 10-hour half-life temperature of the photopolymerization initiator is, for example, 20 ° C or higher, preferably 50 ° C or higher, and further, for example, 107 ° C or lower, preferably 100 ° C or lower.

Examples of the photopolymerization initiator include a ketal photopolymerization initiator, an acetophenone photopolymerization initiator, a benzoin ether photopolymerization initiator, and a mercaptophosphine oxide photopolymerization initiator. Α-keto alcohol photopolymerization initiator, aromatic sulfonium chloride photopolymerization initiator, photoactive oxime photopolymerization initiator, benzoin photopolymerization initiator, benzoin photopolymerization initiator , benzophenone photopolymerization initiator, 9-oxosulfur A photopolymerization initiator or the like. These may be used alone or in combination. 9-oxosulfuric acid is preferably exemplified A photopolymerization initiator. 9-oxosulfur The photopolymerization initiator may, for example, be 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one or 2-hydroxy- 1-{4-[4-(2-Hydroxy-2-methyl-propenyl)-benzyl]phenyl}-2-methyl-propan-1-one. Preferably, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propenyl)-benzyl]phenyl}-2-methyl-propan-1-one is exemplified.

The blending ratio of the photopolymerization initiator is, for example, 0.1 part by mass or more, preferably 0.5 part by mass or more, and further, for example, 10 parts by mass or less, preferably 5 parts by mass or less, based on 100 parts by mass of the polymer.

Further, an additive such as a crosslinking agent can be blended in the polymer in an appropriate ratio. Examples of the crosslinking agent include an isocyanate crosslinking agent and an epoxy crosslinking agent. An oxazoline crosslinking agent, an aziridine crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, and a metal chelate compound A crosslinking agent, a metal salt crosslinking agent, a carbodiimide crosslinking agent, an amine crosslinking agent, and the like. An isocyanate crosslinking agent is preferably mentioned.

When the adhesive layer 61 is formed, an adhesive is applied to the surface of the support sheet 62, and then dried.

Examples of the support sheet 62 include a polymer film such as a polyethylene film or a polyester film (PET or the like), for example, a ceramic sheet, for example, a metal foil. The thickness of the support sheet 62 is, for example, 80 μm or more, preferably 110 μm or more, and is, for example, 300 μm or less, preferably 250 μm or less.

The drying temperature is, for example, 40 ° C or higher, preferably 60 ° C or higher, and, for example, 150 ° C. Hereinafter, it is preferably 130 ° C or lower. The drying temperature is, for example, 5 minutes or less.

Thereafter, the adhesive is aged as needed. The aging temperature is, for example, 25 ° C or higher, preferably 40 ° C or higher, and further, for example, 70 ° C or lower, preferably 60 ° C or lower. The aging time is, for example, 10 hours or longer, and is, for example, 120 hours or shorter.

Thereby, the adhesive layer 61 is formed on the surface of the support sheet 62.

The thickness of the adhesive layer 61 is, for example, 10 μm or more, preferably 20 μm or more, and is, for example, 250 μm or less, preferably 100 μm or less.

Thereby, the protective sheet 6 which has the adhesive layer 61 and the support sheet 62 arrange|positioned on the upper surface of the adhesive layer 61 is obtained.

In the step (iii) shown in Figs. 2F and 3C, the protective sheet 6 has rigidity and toughness to the extent that it does not substantially deform. Specifically, the tensile modulus of the protective sheet 6 at 25 ° C is, for example, 250 MPa or more, preferably 500 MPa or more, more preferably 1,000 MPa or more, and for example, 20,000 MPa or less.

Thereafter, the protective sheet 6 is bonded to the first covering element assembly 41. Specifically, the adhesive layer 61 is bonded to the upper surface of the upper first phosphor layer 52. Thereby, the protective sheet 6 is adhered to protect (cover) the upper surface of the upper first phosphor layer 52.

On the other hand, the bottom surface of the groove 3 (the upper surface of the bottom portion 36) is spaced apart from the lower surface of the protective sheet 6 in the thickness direction. The distance L7 between the bottom surface of the groove 3 and the lower surface of the protective sheet 6 is the same as the depth L7 of the groove 3.

1-3-2. Step (ii)

As shown in FIG. 1E, in the step (ii), the first covering element assembly 41, the first temporary fixing piece 10, and the protective sheet 6 are placed under vacuum. For example, the first covering element assembly 41, the first temporary fixing piece 10, and the protective sheet 6 are placed in the vacuum device 16.

The vacuum device 16 includes a vacuum chamber 18, a vacuum line 19, a vacuum pump 20, a vacuum valve 21, an atmospheric line 22, an atmospheric valve 23, and a stage (not shown).

The vacuum chamber 18 can accommodate the first covering element assembly 41 and the first temporary fixing piece 10 And a sealed container of the protective sheet 6.

One end of the vacuum line 19 (the upstream side end in the suction direction) is connected to the vacuum chamber 18, and the other end of the vacuum line 19 (the downstream side end in the suction direction) is connected to the vacuum pump 20.

The vacuum pump 20 is configured to communicate with a space in the vacuum chamber 18 via a vacuum line 19.

The vacuum valve 21 is interposed in the middle of the vacuum line 19.

The atmospheric line 22 is in the middle of the vacuum line 19, specifically, a line branched from the vacuum chamber 18 and the vacuum valve 21 in the vacuum line 19, and is configured such that one end is open to the atmosphere.

The atmospheric valve 23 is interposed in the middle of the atmospheric line 22.

The platform (not shown) is housed in the vacuum chamber 18 and has a substantially plate shape. Further, the platform has a fixing member such as an adsorption mechanism, and is configured to adsorb (fix) the lower surface of the first temporary fixing piece 10.

Then, the first covering element assembly 41, the first temporary fixing piece 10, and the protective sheet 6 are placed in the vacuum chamber 18, and the air pressure in the vacuum chamber 18 is set to a vacuum pressure.

Specifically, first, the vacuum valve 21 and the atmospheric valve 23 are opened. Thereby, the vacuum pump 20 is in communication with the atmospheric line 22. In this state, the vacuum pump 20 is actuated. Thereafter, the first covering element assembly 41, the first temporary fixing piece 10, and the protective sheet 6 are placed in the vacuum chamber 18 so that the first temporary fixing piece 10 is fixed to a stage (not shown), and then The space (chamber space) 34 in the vacuum chamber 18 is sealed.

Thereafter, the atmospheric valve 23 is closed. Thereby, the vacuum pump 20 communicates with the chamber space 24 via the vacuum valve 21. As such, the air pressure in the chamber space 24 becomes a vacuum. Specifically, the pressure (vacuum pressure) of the chamber space 24 is, for example, 1.0 × 10 ^-2 MPa or less, preferably 1.0 × 10 ^{-3 from} the viewpoint of smoothly flowing the covering material 43 into the sealed space 17 . The MPa or less is more preferably 5.5 × 10 ^-4 MPa or more from the viewpoint of more effectively suppressing generation of voids in the first phosphor layer 2 .

1-3-3. Step (iii)

As shown in FIG. 2F and FIG. 3C, in the step (iii), the covering material 43 is brought into contact with the first temporary fixing piece 10 and the protective sheet 6 so as to surround the first covering element assembly 41, thereby forming a hermetic seal. Space 17.

The covering material 43 contains a coating composition having fluidity at normal temperature (25 ° C).

The coating composition contains, for example, a light-reflective component and/or a light-absorbing component and a resin.

Examples of the light-reflective component include one selected from the group consisting of Ti, Zr, Nb, and Al, and particles such as AlN and/or MgF (light-reflective particles). Specifically, the light reflective component is at least one selected from the group consisting of TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ . From the viewpoint of ensuring high light reflectivity, TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , and Al ₂ O ₃ are preferably exemplified, and TiO ₂ is more preferably exemplified.

The average particle diameter of the light-reflective particles is, for example, 0.1 μm or more, preferably 0.15 μm or more, and is, for example, 80 μm or less, or preferably 50 μm or less.

The blending ratio of the light-reflective component is, for example, 5% by mass or more, and preferably 70% by mass or less based on the coating composition. In addition, the blending ratio of the light-reflective component to 100 parts by mass of the resin is, for example, 3 parts by mass or more, preferably 5 parts by mass or more, and for example, 50 parts by mass or less, preferably 40 parts by mass or less.

Examples of the light absorbing component include a pigment, a dye, and the like. From the viewpoint of light absorbability, light absorbing particles such as carbon black are preferably used. The average particle diameter of the light absorbing particles is, for example, 10 nm or more, preferably 15 nm or more, and is, for example, 100 nm or less, preferably 50 nm or less.

The blending ratio of the light absorbing component is, for example, 0.1% by mass or more, for example, 10% by mass or less based on the coating composition. In addition, the blending ratio of the light absorbing component to 100 parts by mass of the resin is, for example, 0.1 part by mass or more, preferably 0.5 part by mass or more, and for example, 30 parts by mass or less, preferably 25 parts by mass or less.

Examples of the resin include a curable resin such as a thermoplastic resin, for example, a thermosetting resin or an active energy ray-curable resin, and a curable resin is preferably used, and more preferably, from the viewpoint of heat resistance, A good list of thermosetting resins is exemplified.

Examples of the thermosetting resin include a polyoxymethylene resin, an epoxy resin, and an acrylic resin. From the viewpoint of light resistance, a polyfluorene oxide resin is preferably exemplified. The polyoxyxylene resin composition is, for example, a methyl polyoxyphthalocene resin composition disclosed in JP-A-2015-073084.

The blending ratio of the resin is, for example, 20% by mass or more, preferably 30% by mass or more, and for example, 95% by mass or less, preferably 90% by mass or less.

Further, the coating composition can be formulated with an inorganic filler such as cerium oxide or glass at an appropriate ratio. Further, for example, a metal material such as Ag or Cu or diamond, AlN or the like can be blended in an appropriate ratio.

On the other hand, in the first embodiment, the coating composition does not contain a phosphor.

In the preparation of the coating composition, the above components are blended at the above ratio and mixed.

The viscosity of the coating composition at normal temperature (25 ° C) is, for example, 1 Pa ‧ or more, preferably 2 Pa ‧ or more, and further, for example, 50 Pa ‧ or less, preferably 40 Pa ‧ or less. The viscosity of the coated composition was measured using an E-type viscometer.

When the viscosity of the coating composition is at least the above lower limit, precipitation of the light reflective component and/or the light absorbing component can be suppressed. When the viscosity of the coating composition is not more than the above upper limit, generation of voids in the first phosphor layer 2 can be suppressed.

When the covering material 43 is brought into contact with the first temporary fixing piece 10 and the protective sheet 6 so as to surround the first covering element assembly 41, for example, a vacuum injection device (vacuum dispenser) 39, a vacuum printer, or a drawing A coating device such as a device applies a coating material 43 between the lower surface of the peripheral edge of the protective sheet 6 and the upper surface of the first temporary fixing sheet 10 opposed thereto. It is preferable to apply the covering material 43 using the vacuum dispenser 39. Vacuum dispenser 39 includes along A nozzle 40 that extends in the vertical direction and has a reduced cross-sectional area as it faces downward, and a tank (not shown) that is connected to the nozzle 40.

Further, the coating device is incorporated in the vacuum device 16 in advance, specifically, in the vacuum chamber 18. In addition, as shown in FIG. 1D and FIG. 3B (hatched portion), the covering material 43 is applied to the periphery of the region where the first covering element assembly 41 is disposed, and the covering material is applied so as to have a substantially rectangular frame (frame) shape in plan view. 43. The frame (border) shape of the covering material 43 is a continuous shape that is not interrupted in the middle along the circumferential direction of the protective sheet 6.

Further, the covering material 43 has a cross-sectional shape that is raised from the upper surface of the insulating plate 12 toward the upper side.

The coating amount of the covering material 43 is set to be equal to or larger than the volume of the sealed space 17 described below, and specifically, the volume of the sealed space 17 is, for example, 100% or more based on the volume. It is preferably 110% or more, more preferably 120% or more, and further, for example, 200% or less.

The sealed space 17 is formed by the space sealed by the covering material 43.

The sealed space 17 includes a space of the groove 3 and is a space defined by the covering material 43, the protective sheet 6, the first temporary fixing sheet 10, and the first phosphor layer 2 (the first covering element assembly 41).

The air pressure in the closed space 17 is the same as the above air pressure in the chamber space 24.

1-3-4. Step (iv)

In the step (iv), as shown in Fig. 2F, the air pressure of the chamber space 24 (the chamber space 24 on the outer side of the sealed space 17) is set to atmospheric pressure.

Specifically, first, the vacuum valve 21 is closed, and thereafter, the atmospheric valve 23 is opened.

Thereby, the chamber space 24 is opened to the atmosphere via the atmospheric line 22. In this manner, since the atmosphere rapidly flows into the chamber space 24 via the atmospheric line 22, the air pressure in the chamber space 24 becomes atmospheric pressure.

On the other hand, the air pressure in the sealed space 17 maintains the vacuum pressure. Therefore, the confined space 17 The air pressure becomes lower than the air pressure of the chamber space 24. That is, a differential pressure is generated in the sealed space 17 and the chamber space 24. The differential pressure is a pressure difference obtained by subtracting the gas pressure of the sealed space 17 from the air pressure in the chamber space 24 ([pressure in the chamber space 24] - [pressure in the closed space 17), specifically, for example, 0.095 MPa or more. It is preferably 0.096 MPa or more, more preferably 0.097 MPa or more, and further, for example, 0.1 MPa or less.

When the differential pressure is generated, as shown in FIG. 2F, the covering material 43 flows into the sealed space 17, and the sealed space 17 is filled with the covering material 43.

Thereby, the covering material 43 is filled in the groove 3 so that the upper surface of the upper first phosphor layer 52 is exposed.

Thereby, the second coating layer 4 having the same shape as the sealed space 17 and including the covering material 43 is formed. That is, the second coating layer 4 is filled in the groove 3. The thickness L7 of the second coating layer 4 filled in the groove 3 is the same as the depth L7 of the groove 3.

Thereby, the second optical microchip element 1, the first phosphor layer 2, and the second cladding layer 4 are obtained in a state of being held by the first temporary fixing sheet 10 and the protective sheet 6 (clamped). The component assembly 29 is covered. The second covering element assembly 29 is an industrially usable device, and preferably includes only a plurality of optical semiconductor elements 1, one first phosphor layer 2, and one second coating layer 4.

Thereafter, the second covering element assembly 29 is taken out from the vacuum chamber 18 together with the first temporary fixing piece 10 and the protective sheet 6.

1-3-5. Step (v)

In the step (v), as shown in FIG. 2G, when the second coating layer 4 contains a curable resin, the curable resin is cured. Specifically, when the curable resin is a thermosetting resin, the second coating layer 4 is heated.

Thereafter, as shown by the arrow in FIG. 2G, the protective sheet 6 is peeled off from the second covering element assembly 29.

Specifically, first, the protective sheet 6 is irradiated with the above-mentioned active energy ray, and the protection is lowered. The adhesion of the piece 6 is. Then, the protective sheet 6 is peeled off from the upper surface of the upper first phosphor layer 52 and the upper surface of the second covering layer 4.

Thereby, the upper surface of the upper first phosphor layer 52 and the upper surface of the second cladding layer 4 are exposed surfaces that are exposed toward the upper side. The upper surface of the second cladding layer 4 and the upper surface of the upper first phosphor layer 52 are formed on the same plane.

Thereby, the second covering element assembly 29 that exposes the upper surface is obtained in a state of being supported by the first temporary fixing piece 10.

Then, as shown in FIG. 2H, the second cladding layer 4 of the second covering element assembly 29 and the first phosphor layer 2 corresponding thereto are cut, and the optical semiconductor element 1 is singulated. Specifically, the second coating layer 4 and the first phosphor layer 2 (bottom portion 36) corresponding to the groove 3 are cut in the thickness direction by a cutting device such as a cutter.

Thereby, the coated optical semiconductor element 5 including one optical semiconductor element 1, one first phosphor layer 2, and one second cladding layer 4 is obtained in a state of being supported by the first temporary fixing sheet 10. The coated optical semiconductor device 5 is an industrially usable device, and preferably includes only one optical semiconductor element 1, one first phosphor layer 2, and one second cladding layer 4.

Specifically, the coated optical semiconductor element 5 includes an optical semiconductor element 1 and a first phosphor layer 2 which covers the upper surface and the side surface of the optical semiconductor element 1 and has a bottom portion 36 and a second cladding layer 4 which is located at the 1 is on the side of the phosphor layer 2, and covers the side surface of the first phosphor layer 2 and the upper surface of the bottom portion 36.

As shown in FIG. 4, the width β of the second coating layer 4 is the same as the length β of the bottom portion 36. The width β of the second coating layer 4 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 2000 μm or less, preferably 1,000 μm or less.

1-4. Step (4)

As shown in FIG. 2I, in step (4), the coated optical semiconductor element 5 is transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

Specifically, as shown in FIG. 2H, first, in a plurality of coated optical semiconductor elements 5 The first transfer sheet 27 is disposed above. Thereafter, the first transfer sheet 27 is lowered, and the lower surface of the first transfer sheet 27 and the upper surface of the plurality of coated optical semiconductor elements 5 (the upper surface of the upper first phosphor layer 52 and the second cladding layer 4) Upper surface) contact.

The first transfer sheet 27 is a known transfer sheet, and is, for example, an SPV series (manufactured by Nitto Denko Corporation).

The adhesion force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is, for example, higher than the adhesion force F1 of the plurality of coated optical semiconductor elements 5 with respect to the first temporary fixing sheet 10. When the adhesion force F2 of the plurality of coated optical semiconductor elements 5 with respect to the first transfer sheet 27 is higher than the adhesion force F1 of the plurality of coated optical semiconductor elements 5 with respect to the first temporary fixing sheet 10, in the step (4), The coated optical semiconductor element 5 can be reliably transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

The adhesion force F2 of the plurality of coated optical semiconductor elements 5 with respect to the transfer sheet 27 with respect to the adhesion force F1 of the plurality of coated optical semiconductor elements 5 with respect to the temporary fixing sheet 10 is, for example, more than 100%, preferably 110% or more, and more preferably Preferably, it is 120% or more, and for example, it is 300% or less.

Specifically, the adhesion force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is, for example, 0.2 N/20 mm or more, preferably 0.3 N/20 mm or more, more preferably 0.4 N/20 mm or more. For example, it is 3.0 N/20 mm or less. Next, the measurement method of the force F2 will be described in the following examples.

Further, the adhesion force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10 is the adhesion force F1 of the first temporary fixing sheet 10 after the processing (the irradiation of the active energy ray) of the plurality of coated optical semiconductor elements 5 Specifically, for example, it is 0.4 N/20 mm or less, preferably 0.2 N/20 mm or less, more preferably 0.15 N/20 mm or less, and further, for example, 0.01 N/20 mm or more. A method of measuring the adhesion force F1 of the plurality of coated optical semiconductor elements 5 with respect to the processed first temporary fixing sheets 10 will be described in the following embodiments.

Then, the first transfer sheet 27 is pulled up with respect to the first temporary fixing piece 10. By this, the cover The lower surface of the optical semiconductor element 5 is peeled off from the upper surface of the first temporary fixing sheet 10. Specifically, the lower surface of the optical semiconductor element 1 and the lower surface of the bottom portion 36 of the first phosphor layer 2 are peeled off from the upper surface of the temporary fixing layer 11.

Thereby, the coated optical semiconductor element 5 including the optical semiconductor element 1, the first phosphor layer 2, and the second cladding layer 4 is transferred to the first transfer sheet 27.

As shown in FIG. 4, the coated optical semiconductor element 5 is mounted on the substrate 50 thereafter.

Specifically, the coated optical semiconductor element 5 is flip-chip mounted on the substrate 50. That is, the bumps (not shown) of the optical semiconductor element 1 covering the optical semiconductor element 5 are electrically connected to the terminals (not shown) of the substrate 50.

Thereby, as shown in FIG. 4, the light-emitting device 51 including the substrate 50 and the coated optical semiconductor element 5 mounted on the substrate 50 is obtained. Specifically, the light-emitting device 51 includes a substrate 50, an optical semiconductor element 1 mounted on the substrate 50, and a first phosphor layer 2 covering the side surface of the optical semiconductor element 1 and having a bottom portion 36; and a second cladding layer 4 It covers the side surface of the first phosphor layer 2 and the upper surface of the bottom portion 36. The lower surface of the bottom portion 36 is in contact with the upper surface of the substrate 50.

In the light-emitting device 51, the optical semiconductor element 1 emits light by electricity supplied from the substrate 50. One of the light emitted from the optical semiconductor element 1 is wavelength-converted by the first phosphor layer 2. Among the wavelength-converted lights, the upwardly directed light is directly irradiated to the upper side. In particular, light emitted from the optical semiconductor element 1 toward the side is appropriately mixed with light that has been sufficiently wavelength-converted by the bottom portion 36 and light that has been wavelength-converted from the upper portion of the bottom portion 36 of the first phosphor layer 2.

1-5. Effects of the first embodiment

Then, according to this method, as shown in FIG. 2F, in the step (3), the bottom portion 36 of the first phosphor layer 2 is interposed between the second cladding layer 4 filled in the groove 3 and the first temporary fixing sheet 10. Therefore, the second coating layer 4 is prevented from coming into direct contact with the first temporary fixing piece 10. Therefore, even if the adhesion of the second coating layer 4 is high, the second coating layer 4 and the first temporary fixing sheet 10 can be prevented from coming next.

As a result, as shown in FIG. 2I, in step (4), the coated light semi-conductive can be surely The body element 5 is peeled off from the first temporary fixing piece 10.

When the adhesion force F2 of the coated optical semiconductor element 5 with respect to the first temporary fixing piece 10 is lower than the adhesion force F1 of the coated optical semiconductor element 5 with respect to the processed first temporary fixing piece 10, it is covered in the step (4). The optical semiconductor element 5 is not transferred from the first temporary fixing sheet 10 to the first transfer sheet 27, but is adhered to the first temporary fixing sheet 10. When the adhesion force F2 of the coated optical semiconductor element 5 with respect to the first temporary fixing sheet 10 and the adhesion force F1 of the coated optical semiconductor element 5 with respect to the processed first temporary fixing sheet 10 are the same, the photo-semiconductor is covered in the step (4). The element 5 is not reliably transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

According to this method, the adhesion force F2 of the coated optical semiconductor element 5 with respect to the first temporary fixing piece 10 is higher than the adhesion force F1 of the coated optical semiconductor element 5 with respect to the processed first temporary fixing piece 10, and thus, as shown in FIG. 2I, In the step (4), the coated optical semiconductor element 5 can be more reliably transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

According to this method, since the first phosphor layer 2 contains the phosphor, the light emitted from the optical semiconductor element 1 can be wavelength-converted.

In this method, as shown in FIG. 2F, in the step (3), the second coating layer 4 is filled in the groove 3 so that the upper surface of the first phosphor layer 2 is exposed, so that the emission can be obtained. The optical semiconductor element 5 is coated with the directivity light upward. Further, a light-emitting device 51 that emits light having an upward directivity can be obtained.

<Modification of the first embodiment>

In the first embodiment, the step (3) is carried out by the method of using the differential pressure (steps (ii) to (iv)). For example, as shown in FIG. 1D and FIG. 2G, the differential pressure may not be utilized. The protective sheet 6 covers the upper surface of the upper first phosphor layer 52, and the second cladding layer 4 is formed in the groove 3.

Specifically, in this modification, the covering material 43 is poured into the mold in which the protective sheet 6 is provided on the surface, and then the first covering element assembly 41 shown in FIG. 1C is inverted upside down, and the first side of the upper side is inverted. The second coating layer 4 is molded in such a manner that the photo body layer 52 is in contact with the protective sheet 6. shape.

Further, in the first embodiment, the second coating layer 4 is an optical functional layer containing a light-reflective component and/or a light-absorbing component.

However, the second coating layer 4 of this modification may be a transparent layer containing only a resin, which does not contain any of a light reflective component and a light absorbing component.

<Second embodiment>

In the second embodiment, the same members and steps as those in the first embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted.

In the first embodiment, as shown in FIG. 1E to FIG. 2G, in the step (3), the second cladding layer 4 is filled in the groove 3 so that the upper surface of the upper first phosphor layer 52 is exposed. .

However, in the second embodiment, as shown in FIG. 5C, the second coating layer 4 is filled in the groove 3 so as to cover the upper surface of the upper first phosphor layer 52.

A second embodiment of the method for producing a coated optical semiconductor device according to the present invention includes the step (1) of exposing the first phosphor layer 2 and the plurality of optical semiconductor elements 1 by the first phosphor layer 2. a plurality of optical semiconductor elements 1 (see FIG. 5A) that are temporarily fixed to each other on the upper surface of the first temporary fixing piece 10 so as to be in direct contact with the upper surface of the first temporary fixing piece 10 (step (2), The first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with a groove 3 that opens upward (see FIG. 5B); and in step (3), the second cladding layer 4 is filled into the groove 3, and A coated optical semiconductor element 5 including the optical semiconductor element 1, the first phosphor layer 2, and the second cladding layer 4 (see FIGS. 5C and 6D); and a step (4) of coating the optical semiconductor element 5 from the first The temporary fixing sheet 10 is transferred to the first transfer sheet 27 (see FIG. 6E).

In the step (3), first, the second covering layer 4 formed in a substantially flat shape is prepared from the covering material 43.

The thickness L9 of the second coating layer 4 is, for example, 50 μm or more, preferably 75 μm or more, more preferably 100 μm or more, and for example, 2500 μm or less.

Then, the second covering layer 4 is pressure-bonded to the first covering member assembly 41 and the first temporary fixing sheet 10, for example, and is preferably subjected to thermocompression bonding (hot pressing).

The conditions of the pressure bonding (thermocompression bonding) are appropriately adjusted depending on the kind of the resin contained in the covering material.

Thereby, the second coating layer 4 is filled in the groove 3, and the upper first phosphor layer 52 is covered. Further, the second coating layer 4 is also disposed above the groove 3. Thereby, the second covering element assembly 29 including the plurality of optical semiconductor elements 1, the first first phosphor layer 2, and the one second coating layer 4 is obtained.

The second coating layer 4 in the second covering element assembly 29 has a shape extending in the surface direction. Specifically, the upper surface of the second coating layer 4 has a flat surface extending in the surface direction. On the other hand, the lower surface of the second coating layer 4 corresponds to the groove 3, and integrally has a protruding portion 45 that protrudes downward and a concave portion 46 that covers the upper surface of the upper first phosphor layer 52 and is opened downward.

In the step (3), the first phosphor layer 2 and the second cladding layer 4 corresponding to the grooves 3 are cut as shown in FIG. 6D. Specifically, the bottom portion 36 and the protruding portion 45 of the second covering layer 4 are cut by a cutting device such as a cutter.

Thereby, the coated optical semiconductor element 5 including one optical semiconductor element 1, one first phosphor layer 2, and one second cladding layer 4 is obtained in a state of being supported by the first temporary fixing sheet 10.

In the coated optical semiconductor element 5, the thickness z of the second cladding layer 4 located on the upper side of the upper first phosphor layer 52 is relatively thin as shown in FIG. 7, and specifically, for example, 1000 μm or less, preferably 500 μm or less, more preferably 300 μm or less, and further, for example, 1 μm or more, preferably 10 μm or more.

In the coated optical semiconductor element 5, the upper surface of the upper first phosphor layer 52, the side surface of the first phosphor layer 2, and the upper surface of the bottom portion 36 are covered by the second cladding layer 4.

Then, as shown in FIG. 6E, in step (5), the coated optical semiconductor element 5 is self-covered. The temporary fixing sheet 10 is transferred to the first transfer sheet 27, and then, as shown in FIG. 7, is flip-chip mounted on the substrate 50. Thereby, the light-emitting device 51 is obtained.

<Operation and Effect of Second Embodiment>

According to the second embodiment, the same operational effects as those of the first embodiment can be exhibited.

Further, according to the second embodiment, as shown in FIG. 5C, in the step (3), the second coating layer 4 is filled in the groove 3 so as to cover the upper surface of the upper first phosphor layer 52. A part of the light emitted from the optical semiconductor element 1 is wavelength-converted by the upper first phosphor layer 52, and then passes through the second cladding layer 4, so that the light is appropriately mixed. Therefore, the coated optical semiconductor element 5 excellent in optical characteristics and the light-emitting device 51 excellent in optical characteristics can be obtained.

<Modification of Second Embodiment>

In the second embodiment, the thickness z of the second coating layer 4 located on the upper side of the upper first phosphor layer 52 is set to be relatively thin. However, in this modification, for example, the upper first phosphor layer 52 is located. The thickness z of the second coating layer 4 on the upper side is set to be relatively thick. Specifically, the thickness z of the second coating layer 4 located on the upper side of the upper first phosphor layer 52 is, for example, 5 μm or more, preferably 50 μm or more, more preferably 100 μm or more, and for example, 500 μm or less.

When the thickness z of the second covering layer 4 located on the upper side of the upper first phosphor layer 52 is at least the above lower limit, the coated optical semiconductor element 5 and the light-emitting device 51 can emit uniform light.

<Third embodiment and fourth embodiment>

In the third embodiment and the fourth embodiment, the same members and steps as those in the first embodiment and the second embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted.

In the first embodiment and the second embodiment, the second coating layer 4 is not made to contain a phosphor.

In the third embodiment and the fourth embodiment, the second phosphor layer 84, which is an example of the second coating layer, contains a phosphor, as shown in FIG. 8 and FIG. In other words, each of the first phosphor layer 2 and the second phosphor layer 84 contains a phosphor. Preferably, the first phosphor layer 2 contains a red phosphor, and the second phosphor layer 84 contains a green phosphor.

The second phosphor layer 84 of the third embodiment and the fourth embodiment has the same shape and structure as those of the second coating layer 4 of the first embodiment and the second embodiment. The second phosphor layer 84 contains the resin and the phosphor contained in the coating composition. The content ratio of the phosphor is, for example, 0.1 part by mass or more, preferably 0.5 part by mass or more, and further, for example, 80 parts by mass or less, preferably 50 parts by mass or less, based on 100 parts by mass of the resin. In addition, the content ratio of the phosphor is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, and further preferably 90% by mass or less, preferably 80% by mass, based on the total mass of the resin and the phosphor. %the following.

The ratio of the phosphor contained in the first phosphor layer 2 to the phosphor contained in the second phosphor layer 84 (the phosphor/second phosphor contained in the first phosphor layer 2) The phosphor contained in the bulk layer 84 is, for example, 0.1 or more, preferably 0.5 or more, and preferably 10 or less, preferably 2 or less, on a mass basis.

As shown in FIG. 8, the coated optical semiconductor element 5 obtained by the manufacturing method of the third embodiment includes an optical semiconductor element 1 and a first phosphor layer 2 which covers the upper surface and the side surface of the optical semiconductor element 1, and There is a bottom portion 36; and a second phosphor layer 84 covering the upper surface of the first phosphor layer 2 and the upper surface of the bottom portion 36.

In the third embodiment, the width β of the second phosphor layer 84 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 2000 μm or less, preferably 1,000 μm or less.

The thickness L7 of the second phosphor layer 84 is, for example, 50 μm or more, preferably 100 μm or more, and is, for example, 2000 μm or less, or preferably 1,000 μm or less.

Further, as shown in FIG. 9, the coated optical semiconductor element 5 obtained by the manufacturing method of the fourth embodiment includes an optical semiconductor element 1 and a first phosphor layer 2 which is covered with an optical semiconductor. The upper surface and the side surface of the element 1 have a bottom portion 36; and a second phosphor layer 84 covering the upper surface of the first phosphor layer 2 (including the upper surface of the bottom portion 36) and the side surface. The upper surface of the second phosphor layer 84 is a flat surface extending in the plane direction. The lower surface of the second phosphor layer 84 has a protruding portion 45 and a concave portion 46.

In the fourth embodiment, the width β of the second phosphor layer 84 is the same as the width β in the third embodiment. The thickness z of the second phosphor layer 84 located on the upper side of the upper first phosphor layer 52 is, for example, relatively thick, and is, for example, 10 μm or more, preferably 25 μm or more, and more preferably 50 μm or more. For example, it is 2000 μm or less.

<Effects of the third embodiment and the fourth embodiment>

According to the third embodiment and the fourth embodiment, the same operational effects as those of the above embodiments can be exhibited.

As shown in FIG. 8, according to the coated optical semiconductor element 5 obtained by the third embodiment, the light emitted upward from the optical semiconductor element 1 is wavelength-converted by the upper first phosphor layer 52. Further, the light emitted from the optical semiconductor element 1 toward the side is sequentially wavelength-converted by the first phosphor layer 2 and the second phosphor layer 84. Therefore, the coated optical semiconductor element 5 having excellent luminous efficiency and the light-emitting device 51 having excellent luminous efficiency can be obtained.

As shown in FIG. 9, according to the coated optical semiconductor element 5 obtained in the fourth embodiment, the light emitted from the upper side and the side of the optical semiconductor element 1 is composed of the first phosphor layer 2 and the second phosphor layer 84. Perform wavelength conversion in sequence. Therefore, the coated optical semiconductor device 5 having excellent light uniformity and luminous efficiency and the light-emitting device 51 excellent in luminous efficiency can be obtained.

<Fifth Embodiment and Sixth Embodiment>

In the fifth embodiment and the sixth embodiment, the same members and steps as those in the first to fourth embodiments are denoted by the same reference numerals, and the detailed description thereof will be omitted.

In the third embodiment and the fourth embodiment, the first phosphor layer 2 which is an example of the first coating layer contains a phosphor.

However, in the fifth embodiment and the sixth embodiment, the first coating layer 82 is not made to contain the phosphor. That is, the first covering layer 82 is a transparent layer containing no phosphor.

On the other hand, the second phosphor layer 84 is a phosphor layer containing a phosphor. Preferably, the second phosphor layer 84 contains a yellow phosphor.

As shown in FIG. 10 and FIG. 11, the first coating layer 82 of the fifth embodiment and the sixth embodiment has the same shape and structure as those of the first phosphor layer 2 of the first embodiment and the second embodiment. The first coating layer 82 contains the above transparent resin composition (resin composition containing no phosphor). Therefore, the first covering layer 82 is a transparent layer having transparency.

Further, as shown in FIG. 1B and FIG. 1C, in the step (2), a plurality of optical semiconductor elements 1 and a plurality of optical semiconductor elements 1 are provided in a state of being supported by the first temporary fixing sheets 10, and the grooves 3 are provided. The first covering element assembly 41 of the first covering layer 82 (not shown in FIGS. 1B and 1C).

The second phosphor layer 84 has the same shape and structure as those of the second coating layer 4 of the first embodiment and the second embodiment. The second phosphor layer 84 includes a composition for forming the second phosphor layer 84 similar to that of the third embodiment and the fourth embodiment, that is, a resin and a phosphor.

As shown in FIG. 10, the coated optical semiconductor element 5 obtained by the manufacturing method of the fifth embodiment includes an optical semiconductor element 1 and a first cladding layer 82 which covers the upper surface and the side surface of the optical semiconductor element 1 and has The bottom portion 36 and the second phosphor layer 84 cover the side surface of the first covering layer 82 on the side of the first covering layer 82 and the upper surface of the bottom portion 36. The first coating layer 82 that covers the optical semiconductor element 5 has a portion on the upper side of the optical semiconductor element 1 (the upper first cladding layer 83 corresponds to the upper first phosphor layer 52 in the first embodiment), and the upper side is exposed. 1 The upper surface of the coating layer 83.

In the fifth embodiment, the distance α between the inner side surface of the groove 3 and the side surface of the optical semiconductor element 1 is, for example, 50 μm or more, preferably 100 μm or more, and is, for example, 2000 μm or less, preferably 1,000 μm or less. The thickness L7 of the second phosphor layer 84 is, for example, 50 μm or more, preferably 100 μm or more, and is, for example, 2000 μm or less, or preferably 1,000 μm or less.

Further, as shown in FIG. 11, the coated optical semiconductor element 5 obtained by the manufacturing method of the sixth embodiment includes an optical semiconductor element 1 and a first cladding layer 82 covering the upper surface and the side surface of the optical semiconductor element 1. And having a bottom portion 36; and a second phosphor layer 84 covering the upper first cladding layer 83.

In the sixth embodiment, the width β of the second phosphor layer 84 is the same as the width β in the fifth embodiment. The thickness z of the second phosphor layer 84 located on the upper side of the upper first coating layer 83 is, for example, relatively thick, and is specifically, for example, 20 μm or more, preferably 50 μm or more, and more preferably 100 μm or more. It is 2000 μm or less.

<Effects of the fifth embodiment and the sixth embodiment>

According to the fifth embodiment and the sixth embodiment, the same operational effects as those of the above embodiments can be exhibited.

As shown in FIG. 10, according to the coated optical semiconductor element 5 obtained in the fifth embodiment, light emitted from the optical semiconductor element 1 is transmitted through the first cladding layer 82. The light that has passed through the first coating layer 82 toward the side is wavelength-converted by the second phosphor layer 84, and then slanted upward. Therefore, the light extraction efficiency can be improved.

As shown in FIG. 11, according to the coated optical semiconductor element 5 obtained in the sixth embodiment, light emitted from the optical semiconductor element 1 is transmitted through the first covering layer 82. The light that has passed through the first coating layer 82 toward the side is wavelength-converted by the second phosphor layer 84, and then slanted upward. Further, a part of the light that has passed through the upper first cladding layer 83 toward the upper side is partially turned upward after being wavelength-converted by the second phosphor layer 84. Therefore, the coated optical semiconductor element 5 is excellent in luminous efficiency.

<Seventh embodiment>

In the seventh embodiment, the same members and steps as those in the first embodiment to the sixth embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted.

In the first embodiment, the first temporary fixing piece 10 is exemplified as an example of the temporary fixing piece. On the other hand, in the seventh embodiment, as shown in Fig. 15C, the first transfer is cited. The sheet 37 is an example of a temporary fixing sheet.

Further, in the first embodiment, as shown in FIG. 1A and FIG. 1B, in step (1), the lower surfaces of the plurality of optical semiconductor elements 1 are directly temporarily fixed to the temporary fixing sheets 10.

On the other hand, in the seventh embodiment, in the step (1), as shown in FIG. 15C, each of the plurality of optical semiconductor elements 1 is indirectly temporarily fixed to the temporary fixing piece via the first phosphor layer 2. 10.

A seventh embodiment of the method for producing a coated optical semiconductor device according to the present invention includes the steps of preparing the first covering element assembly 41 (see FIGS. 15A and 15B); and transferring the first covering element assembly 41 to Step (1) of temporarily fixing the first transfer sheet 37 (see FIG. 15C); step (2) of providing the groove 3 (refer to FIG. 15D); and step of filling the second cladding layer 4 into the groove 3. (3) (refer to FIG. 16E); a step (4) of transferring the coated optical semiconductor element 5 from the first transfer sheet 37 to the second transfer sheet 38 as an example of a transfer sheet (see FIG. 16F); The step of removing one of the second covering layers 4 (see FIG. 16G). In the seventh embodiment, the above steps are carried out in sequence.

As shown in FIG. 15C, in the step (1), the first covering element assembly 41 is transferred to the first transfer sheet 37. When the first covering element assembly 41 is transferred to the first transfer sheet 37, as shown in FIG. 15B, first, the first transfer sheet 37 is placed above the first covering element assembly 41. The first transfer sheet 37 is also a temporary fixing sheet that can temporarily fix the first covering element assembly 41 including the optical semiconductor elements 1 arranged at a distance from each other. The first transfer sheet 37 is the same as the transfer sheet 27 described above.

Thereafter, the first transfer sheet 37 is lowered, and the lower surface of the first transfer sheet 37 is brought into contact with the upper surface of the first covering element assembly 41.

Then, the first transfer sheet 37 is pulled up with respect to the first temporary fixing piece 10. Thereby, the lower surface of the first covering element assembly 41 is peeled off from the upper surface of the first temporary fixing piece 10. Thereby, a plurality of optical semiconductor elements 1 and a first cladding covering the first phosphor layers 2 are provided The element assembly 41 is temporarily fixed to the first transfer sheet 37. Thereafter, as shown in FIG. 15C, the first covering element assembly 41 and the first transfer sheet 37 are vertically inverted.

Thereby, the first covering element assembly 41 is exposed on the lower surface thereof while being supported by the first transfer sheet 37. In the first covering element assembly 41, the lower surface of the plurality of optical semiconductor elements 1 is supported by the first transfer sheet 37 via the first phosphor layer 2 via the first phosphor layer 2 (temporarily fixed) . Further, in the first covering element assembly 41, the upper surface of the optical semiconductor element 1 is exposed. Further, in the first covering element assembly 41, the upper surface of the optical semiconductor element 1 is formed by the above-described bumps. Further, the first phosphor layer 2 is interposed between the plurality of optical semiconductor elements 1 and the first transfer sheet 37.

As shown in FIG. 15D, in the first covering element assembly 41, the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is provided with the groove 3 opened upward.

The groove 3 is opened in the same direction as the bump (upper surface) of the optical semiconductor element 1, specifically, toward the upper side.

The depth L7 of the groove 3 is set to be large, for example, with respect to the thickness L1 of the optical semiconductor element 1. Specifically, the depth L7 of the groove 3 is, for example, 50 μm or more, preferably 100 μm or more, and is, for example, 2000 μm or less, preferably 1000 μm or less.

As shown in FIG. 16E, the second cladding layer 4 is then filled in the trench 3 so as to cover the upper surface (bump) of the optical semiconductor element 1.

Thereafter, as shown in FIG. 16F, the first phosphor layer 2 and the second cladding layer 4 corresponding to the grooves 3 are cut.

In this state, the coated photo-semiconductor including one optical semiconductor element 1, one first phosphor layer 2, and one second cladding layer 4 is obtained while being supported (temporarily fixed) by the first transfer sheet 37. Element 5.

In the coated optical semiconductor element 5, the thickness h1 of the second cladding layer 4 located on the upper side of the optical semiconductor element 1 is, for example, 500 μm or less, preferably 300 μm or less, and is, for example, 1 Above μm, preferably 10 μm or more.

Thereafter, as shown in FIG. 16G, the upper end portion of the second coating layer 4 is removed.

Specifically, the second cladding layer 4 covering the upper surface of each of the plurality of optical semiconductor elements 1 is removed. At the same time, the upper end portion of the second covering layer 4 on the upper side of the bottom portion 36 is removed.

When the upper end portion of the second coating layer 4 is removed, although not shown, for example, (1) a method of using an adhesive sheet, although not shown, for example, (2) a method using a solvent, although not shown, However, for example, (3) a method of using an abrasive member or the like is employed. Hereinafter, each method will be described.

(1) Method of using adhesive sheets

The adhesive sheet is prepared from an adhesive and has a sheet shape continuous in the front-rear direction and the left-right direction. The size of the adhesive sheet is set to include the size of the upper end portion of the plurality of second covering layers 4, for example, when the adhesive sheet is projected in the thickness direction. Examples of the adhesive include an acrylic adhesive, a rubber adhesive, a polyoxygen adhesive, a urethane adhesive, and a polypropylene amide adhesive. Moreover, the adhesive sheet can also be supported by a support material or the like. The adhesive force (180 ° C peeling adhesion force) of the adhesive sheet at 25 ° C is, for example, 7.5 (N/20 mm) or more, preferably 10.0 (N/20 mm) or more, and, for example, 100 (N/20 mm) or less. Good is 20.0 (N/20mm) or less.

In the method of using the adhesive sheet, the adhesive surface of the adhesive sheet (when the adhesive sheet is supported by the support material, the opposite side of the surface supported by the support material) is adhered to the upper surface of the second coating layer 4, Then, the upper end portion of the second coating layer 4 is peeled off. Specifically, first, the adhesive sheet is lowered, and then the adhesive sheet is adhered to the upper end portion of the second covering layer 4, and thereafter, the adhesive sheet and the upper end portion of the second covering layer 4 are simultaneously raised (pushed).

The second cladding layer 4 located on the upper side of the optical semiconductor element 1 is peeled off from the interface with the upper surface (bump) of the optical semiconductor element 1, and follows the adhesive sheet.

Furthermore, when the peeling of the upper end portion of the second coating layer 4 is not completed once, the plural number is repeated. By the above operation, the peeling of the upper end portion of the second coating layer 4 is completed. At this time, in the second covering layer 4, the upper end portion of the second covering layer 4 located on the upper side of the bottom portion 36 also follows the adhesive sheet simultaneously with the second covering layer 4 located on the upper side of the optical semiconductor element 1.

(2) Method of using a solvent

As the solvent, for example, a solvent which can be completely or partially dissolved or dispersed by the coating resin composition is selected. Specifically, examples of the solvent include an organic solvent and an aqueous solvent. Examples of the organic solvent include alcohols such as methanol and ethanol; ketones such as acetone and methyl ethyl ketone; aliphatic hydrocarbons such as hexane; aromatic hydrocarbons such as toluene; and ethers such as tetrahydrofuran. Preferably, an alcohol or an aromatic hydrocarbon is mentioned.

In this method, specifically, the cloth is absorbing the solvent, and the upper surface of the second coating layer 4 is wiped with the cloth. Thereby, the upper end portion of the second coating layer 4 is removed.

(3) Method of using an abrasive member

Examples of the polishing member include a cloth such as a polishing cloth, a brush, and a water blasting machine.

The upper surface of the second coating layer 4 is polished by a polishing member. Thereby, the upper end portion of the second coating layer 4 is removed.

Thereby, the upper surface of the optical semiconductor element 1, the upper surface of the first phosphor layer 2, and the upper surface of the second cladding layer 4 have the same plane. That is, the upper surface of the optical semiconductor element 1 forms the same plane as the upper surface of the first phosphor layer 2 and the upper surface of the second cladding layer 4.

The thickness h2 of the second coating layer 4 is, for example, 15 μm or more, preferably 50 μm or more, and is, for example, 2000 μm or less, or preferably 1000 μm or less.

Then, after the coated optical semiconductor element 5 is transferred to the second transfer sheet 38 as shown by a two-dot chain line in FIG. 16G, as shown in FIG. 17, a pick-up device (not shown) or the like including a nozzle is used. The coated optical semiconductor element 5 is flip-chip mounted on the substrate 50. Thereby, the light-emitting device 51 is obtained.

The adhesion force F4 of the plurality of coated optical semiconductor elements 5 to the second transfer sheet 38 is, for example, higher than the adhesion force F3 of the plurality of coated optical semiconductor elements 5 with respect to the first transfer sheet 37. In plural When the adhesion force F4 of the coated optical semiconductor element 5 with respect to the second transfer sheet 38 is higher than the adhesion force F3 of the plurality of coated optical semiconductor elements 5 with respect to the first transfer sheet 37, in the step (4), it is possible to surely The coated optical semiconductor element 5 is transferred from the first transfer sheet 37 to the second transfer sheet 38.

The adhesion force F4 of the plurality of coated optical semiconductor elements 5 with respect to the second transfer sheet 38 is, for example, more than 100%, preferably 110% or more, with respect to the adhesion force F3 of the plurality of coated optical semiconductor elements 5 with respect to the first transfer sheet 37. More preferably, it is 120% or more, and is, for example, 300% or less.

<Effects of the seventh embodiment>

According to the seventh embodiment, the same operational effects as those of the second embodiment can be exhibited.

According to this method, as shown in FIG. 16E, in the step (3), the bottom portion 36 of the first phosphor layer 2 is interposed between the second coating layer 4 and the first transfer sheet 37 filled in the groove 3. Therefore, the second coating layer 4 is prevented from coming into direct contact with the first transfer sheet 37. Therefore, even if the adhesion of the second coating layer 4 is high, the second coating layer 4 can be prevented from following the first transfer sheet 37.

As a result, as shown in FIG. 16F and FIG. 16G, in step (4), the coated optical semiconductor element 5 can be reliably peeled off from the first transfer sheet 37.

When the adhesion force F4 of the coated optical semiconductor element 5 with respect to the second transfer sheet 38 is lower than the adhesion force F3 of the coated optical semiconductor element 5 with respect to the processed first transfer sheet 37, the light is covered in the step (4). The semiconductor element 5 is not transferred from the first transfer sheet 37 to the second transfer sheet 38 but is adhered to the first transfer sheet 37. When the adhesion force F4 of the coated optical semiconductor element 5 with respect to the second transfer sheet 38 is the same as the adhesion force F3 of the coated optical semiconductor element 5 with respect to the processed first transfer sheet 37, the optical semiconductor element is coated in the step (4). 5 is not reliably transferred from the first transfer sheet 37 to the second transfer sheet 38.

According to this method, the adhesion force F4 of the coated optical semiconductor element 5 with respect to the second transfer sheet 38 is higher than the adhesion force F3 of the coated optical semiconductor element 5 with respect to the processed first transfer sheet 37, and thus, as shown in FIG. 16G, In the step (4), the coated optical semiconductor element 5 can be more surely The first transfer sheet 37 is transferred to the second transfer sheet 38.

Further, as shown in FIG. 17, in the coated optical semiconductor element 5, since the first phosphor layer 2 has the bottom portion 36, the bottom portion 36 can efficiently wavelength-convert light emitted from the optical semiconductor element 1 and obliquely upward. . Therefore, the coated optical semiconductor element 5 having excellent light extraction efficiency and the light-emitting device 51 excellent in light extraction efficiency can be obtained.

<Eighth Embodiment>

In the eighth embodiment, the same members and steps as those in the first to seventh embodiments are denoted by the same reference numerals, and the detailed description thereof will be omitted.

In the eighth embodiment, as shown in FIG. 17, the bottom portion 36 as a protruding portion is provided in the first phosphor layer 2.

In the eighth embodiment, as shown in FIG. 19, the first phosphor layer 2 does not have the bottom portion 36 as a protruding portion.

The eighth embodiment of the method for manufacturing a coated optical semiconductor device according to the present invention includes, in addition to the steps included in the seventh embodiment, the first phosphor layer 2 is removed as shown in Figs. 18A and 18B. The step of the upper end of the bottom 36.

The step of removing the upper end portion of the first phosphor layer 2 is performed after the step (4) of transferring the coated optical semiconductor element 5 to the second transfer sheet 38 as shown in FIG. 18A.

In the step of removing the upper end portion of the first phosphor layer 2 as shown in Fig. 18B, the same method as the method of removing the upper end portion of the second cladding layer 4 in the seventh embodiment is employed.

Thereby, the upper end portion including the bottom portion 36 is removed in the first phosphor layer 2.

Thus, the upper end portion of the second coating layer 4 is exposed on the upper side. The upper surface of the second cladding layer 4 and the upper surface of the first phosphor layer 2 have the same plane. That is, the upper surface of the second coating layer 4 and the upper surface of the first phosphor layer 2 form the same plane.

The first phosphor layer 2 has a substantially bottomed box shape and has a shape in which the optical semiconductor element 1 is embedded in the lower end portion thereof. In other words, it has a shape in which the optical semiconductor element 1 is covered in the lower portion and has a concave portion that is opened downward. Specifically, the first phosphor layer 2 has an upper side exposed The upper surface (upper end surface), the lower surface of the second transfer sheet 38, the outer surface covered by the inner side surface of the second coating layer 4, and the inner surface of the upper surface and the side surface of the coated optical semiconductor element 1 .

The second coating layer 4 is disposed on the outer side in the surface direction of the first phosphor layer 2, and has a rectangular frame shape. The second coating layer 4 has a surface on the same plane as the upper surface of the first phosphor layer 2, and is exposed to the lower surface of the first plane of the first phosphor layer 2 and the lower surface of the optical semiconductor element 1, and is exposed to the outside in the plane direction. The side surface and the inner side surface of the outer surface of the first phosphor layer 2 are covered.

The thickness L4 of the upper first phosphor layer 52 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 2000 μm or less, or preferably 1,000 μm or less.

Thereafter, as shown in FIG. 19, the coated optical semiconductor element 5 is flip-chip mounted on the substrate 50 by using a pick-up device (not shown) or the like including a nozzle. Thereby, the light-emitting device 51 is obtained.

<Effects of the eighth embodiment>

According to the eighth embodiment, the same operational effects as those of the seventh embodiment can be exhibited.

Further, in the coated optical semiconductor device 5 and the light-emitting device 51, since the first phosphor layer 2 does not have the bottom portion 36 (see FIG. 17), it is possible to suppress light from leaking to the side and increase the brightness to the top (front luminance). ).

[Examples]

The specific values such as the blending ratio (content ratio), the physical property value, and the parameters used in the following descriptions may be substituted for the blending ratios (content ratios) and physical properties corresponding to the above-described "forms for carrying out the invention". The upper limit value (the value defined by "below" or "not reached") or the lower limit (the value defined by "above" or "exceed").

First, each component will be described in detail.

Phenyl polyoxy resin composition: Japanese Patent Laid-Open Publication No. 2015-073084 Phenyl polyoxyl resin composition A described in the examples

Methyl polyoxy resin composition: trade name "LS1-6140", manufactured by Nusil

Titanium oxide: light reflective component, trade name "R-706", average particle size 0.38 μm, manufactured by Dupont

Ceria filler: inorganic filler, trade name "FB9454", average particle size 20μm, manufactured by Denka

Carbon black: light absorbing particles, trade name "MA600", average particle size 20nm, manufactured by Mitsubishi Chemical Corporation

Yellow phosphor: YAG phosphor, trade name "Y468", YAG: Ce, average particle size 17μm, manufactured by Nemoto Lumi-Materials

Red phosphor: CASN phosphor, trade name "ER6238", CaAlSiN ₃ :Eu, average particle size 15μm, manufactured by Intematix

Green phosphor: LuAG phosphor: trade name "LP-6956", Lu ₃ Al ₅ O ₁₂ : Ce, average particle size 15μm, manufactured by LWB

(Examples and Comparative Examples Corresponding to the First Embodiment)

Example 1

Step (1): As shown in FIG. 1A, on the upper surface of the first temporary fixing piece 10, a space of L3 300 μm (pitch P 1440 μm) is arranged, and a plurality of blues having a thickness L1 of 150 μm and a width L2 of 1140 μm are arranged in alignment. Optical semiconductor component 1 of a color LED. The first temporary fixing piece 10 includes a temporary fixing layer 11 made of a double-sided tape and a support layer 12 made of a stainless steel plate.

Then, a flat first phosphor layer 2 was prepared from a phosphor resin composition containing 15 parts by mass of a yellow phosphor and 100 parts by mass of a phenyl-based polyoxyxene resin composition. The thickness L0 of the first phosphor layer 2 was 350 μm.

Thereafter, as shown in FIG. 1B, the first phosphor layer 2 is thermocompression bonded to the plurality of first phosphor layers 2. The conditions of thermocompression bonding were 90 ° C for 10 minutes. Thereby, the first phosphor layer 2 and the self-complex The upper surface of the first temporary fixing piece 10 in which the optical semiconductor elements 1 are exposed is in direct contact with each other.

The thickness L4 of the upper first phosphor layer 52 is 150 μm, and the thickness L5 of the first phosphor layer 2 between the adjacent optical semiconductor elements 1 is 300 μm.

Step (2): As shown in FIG. 1C, a slit 3 is provided in the first phosphor layer 2 between the adjacent optical semiconductor elements 1 by a cutter 35 having a thickness of 200 μm.

The width L6 of the groove 3 is 200 μm, and the depth L7 of the groove 3 is 280 μm. Further, the thickness L8 of the bottom portion 36 is 20 μm. The distance α between the inner side surface of the groove 3 and the side surface of the optical semiconductor element 1 was 100 μm.

A first covering element assembly 41 including a plurality of optical semiconductor elements 1 and a first phosphor layer 2 having grooves 3 is obtained.

Step (3): As a method of filling the second coating layer 4 into the tank 3, steps (i) to (v) are sequentially carried out.

Step (i): First, an adhesive is prepared.

That is, 100 parts by mass of 2-ethylhexyl acrylate (2EHA) and 12.6 parts by mass of 2-hydroxyethyl acrylate (2-HEA) and diphenyl peroxide in a reaction container equipped with a thermometer, a stirrer, and a nitrogen introduction tube. To a toluene (polymerization solvent), 0.25 parts by mass of a formazan (BPO, a polymerization initiator) (trade name "Nyper BW", manufactured by Nippon Oil Co., Ltd.) was introduced, and the monomer components were copolymerized at 60 ° C under a nitrogen stream. Thereby, a 45 mass% toluene solution of an acrylic polymer was obtained. 13.5 parts by mass of methyl methacrylate isocyanate was added thereto, and an acryloyl isocyanate (a compound containing an isocyanate group) was subjected to an addition reaction to an acrylic polymer to prepare a carbon- An acrylic polymer having a carbon double bond. Furthermore, 0.1 parts by mass of an isocyanate-based crosslinking agent (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts by mass of the solid content of the acrylic polymer in the toluene solution of the acrylic polymer. And photopolymerization initiator (trade name "Irgacure 127", (2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propenyl)-benzyl]phenyl}- 2-Methyl-propan-1-one, manufactured by Ciba Specialty Chemicals Co., Ltd.) 2 parts by mass. Thereby, an adhesive containing a resin composition into which a carbon-carbon double bond was introduced was prepared.

Then, the adhesive was applied to the surface of the support sheet 62 containing a PET film (manufactured by Daisan Paper Co., Ltd.) having a thickness of 125 μm, dried at 120 ° C for 3 minutes, and further aged at 50 ° C for 24 hours. Thereby, an adhesive layer 61 having a thickness of 30 μm was formed on the surface of the support sheet 62.

Thereby, the protective sheet 6 having the adhesive layer 61 and the support sheet 62 and having a thickness of 145 μm was prepared. Further, the tensile modulus of the protective sheet 6 at 25 ° C was 3,650 MPa.

Thereafter, as shown in FIG. 1D, the adhesive layer 61 of the protective sheet 6 is bonded to the upper surface of the upper first phosphor layer 52 by using a hand roller. Further, the lower surface of the adhesive layer 61 is spaced apart from the bottom surface of the groove 3.

Step (ii): As shown in FIG. 1E, a vacuum chamber 18, a vacuum line 19, a vacuum pump 20, a vacuum valve 21, an atmospheric line 22, an atmospheric valve 23, and a vacuum dispenser 39 filled with a covering material 43 are prepared. Vacuum device 16.

Then, the vacuum pump 20 is actuated while the vacuum valve 21 and the atmospheric valve 23 are opened, and then the first covering element assembly 41, the first temporary fixing piece 10, and the protective sheet 6 are placed in the vacuum chamber 18.

Then, the chamber space 24 is sealed, and then the atmospheric valve 23 is closed. Thus, the gas pressure in the chamber space 24 becomes 6.6 × 10 ^-4 MPa.

Step (iii): A coating material 43 containing 100 parts by mass of a methyl polyoxyethylene resin composition, 10 parts by mass of titanium oxide, and 100 parts by mass of a cerium oxide filler is prepared.

Then, as shown in FIG. 1E, 431.3 mL of the covering material (142% of the volume of the sealed space 7) is applied from the nozzle 41 of the vacuum dispenser 39 to the lower surface of the peripheral edge of the protective sheet 6, and is opposed thereto. The first temporary fixing piece 10 is between the upper surfaces. Thereby, the sealed space 7 is formed.

Step (iv): Next, as shown in Fig. 2F, the vacuum valve 21 is closed, and thereafter, the atmospheric valve 23 is opened. Thereby, the air pressure in the chamber space 24 is set to atmospheric pressure.

In this manner, the covering material 43 flows into the sealed space 7, and the sealed space 7 is filled with the covering material 43. That is, the second coating layer 4 having the same shape as the sealed space 7 and including the covering material 43 is formed. That is, the second coating layer 4 is filled in the groove 3. Then, the second covering element assembly 29 including the plurality of optical semiconductor elements 1, the first phosphor layer 2, and the second coating layer 4 is obtained.

Thereafter, the first temporary fixing piece 10, the second covering element assembly 29, and the protective sheet 6 are taken out from the vacuum chamber 18.

Step (v): Next, as shown in FIG. 2G, the second covering element assembly 29 and the protective sheet 6 are placed in a hot air circulation type dryer, and heated at 150 ° C for 2 hours to thereby form the second coating layer 4 Completely hardened.

Thereafter, the protective sheet 6 is irradiated with an active energy ray to lower the adhesion of the adhesive layer 61. Then, as shown by the arrow in FIG. 2G, the protective sheet 6 is peeled off from the upper surface of the upper first phosphor layer 52 and the upper surface of the second coating layer 4.

As shown in Fig. 2H, the second coating layer 4 and the bottom portion 36 were cut in the thickness direction by a cutter having a thickness of 40 μm. Thereby, a plurality of coated optical semiconductor elements 5 are obtained in a state of being supported by the first temporary fixing sheets 10. The width β of the second coating layer 4 is 300 μm. The size of the coated optical semiconductor element 5 is 2440 μm × 2440 μm × 300 μm.

Step (4): As shown in FIG. 2I, a plurality of coated optical semiconductor elements 5 are transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 including SPV-224 (manufactured by Nitto Denko Corporation).

Manufacture of illuminating devices:

Thereafter, the coated optical semiconductor element 5 is flip-chip mounted on the substrate 50 to obtain a light-emitting device 51.

Examples 2 and 3

In the step (2), except that the thickness L8 of the bottom portion 36 corresponding to the groove 3 is changed as shown in Table 1, the treatment is performed in the same manner as in the first embodiment to obtain the coated optical semiconductor element 5, and then the light-emitting device is obtained. 51.

Comparative example 1

In the step (2), as shown in FIG. 12A, the first phosphor layer 2 is provided with the opening portion 3' extending in the thickness direction thereof, and the processing is performed in the same manner as in the first embodiment. The first covering element assembly 41 is obtained. The upper surface of the first temporary fixing piece 10 is exposed from the opening 3'. Further, the bottom portion 36 (projecting portion) is not formed in the first phosphor layer 2.

In the step (3), as shown in FIG. 12B, the second coating layer 4 is in direct contact with the upper surface of the first temporary fixing piece 10 at the opening 3'.

Then, in step (4), as shown in FIG. 12D, the coated optical semiconductor element 5 is not transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

(Example corresponding to the second embodiment)

Example 4

In the step (3), the second coating layer 4 was formed by die-forming instead of the differential pressure method (steps (ii) to (iv)), and the same procedure as in the second embodiment was obtained. The optical semiconductor element 5 is coated, and then the light-emitting device 51 is obtained.

Examples 5 and 6

A coated optical semiconductor element 5 was obtained in the same manner as in Example 2 except that 10 parts by mass of carbon black was added to 10 parts by mass of titanium oxide to prepare a coating material 43, and then a light-emitting device 51 was obtained.

Example 7

The coated optical semiconductor element 5 was obtained in the same manner as in Example 4 except that the coating material 43 was prepared without dissolving titanium oxide, and then the light-emitting device 51 was obtained.

Comparative example 2

In the step (2), as shown in FIG. 13A, the first phosphor layer 2 is provided with the opening portion 3' extending in the thickness direction thereof, and the processing is performed in the same manner as in the seventh embodiment. The first covering element assembly 41 is obtained. The upper surface of the first temporary fixing piece 10 is exposed from the opening 3'. Further, the bottom portion 36 (projecting portion) is not formed in the first phosphor layer 2.

In the step (3), as shown in FIG. 13B, the second coating layer 4 is in direct contact with the upper surface of the first temporary fixing piece 10 at the opening 3'.

Then, in the step (4), as shown in FIG. 13D, the coated optical semiconductor element 5 is not transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

(Examples and Comparative Examples Corresponding to the Fourth Embodiment)

Example 8

In addition to a phosphor resin composition containing 0.8 parts by mass of a red phosphor and 100 parts by mass of a phenyl-based polyoxyxene resin composition, a flat first phosphor layer 2 is prepared, and green fluorescent light is used. The coated optical semiconductor element 5 shown in FIG. 9 was obtained in the same manner as in the fourth embodiment except that the coating material 43 was prepared in an amount of 22 parts by mass of the body and 100 parts by mass of the methyl polyoxyxene resin composition. The light-emitting device 51 is obtained as shown by a chain double-dashed line in FIG.

As shown in FIG. 9, the coated optical semiconductor element 5 includes an optical semiconductor element 1, a first phosphor layer 2 containing a red phosphor and a phenyl-based polyoxymethylene resin composition, and a second phosphor layer 84. It contains a green phosphor and a methyl polyoxy resin composition.

Comparative example 3

In the step (2), as shown in FIG. 14A, the first phosphor layer 2 is provided with the opening 3' passing through the thickness direction thereof in the first phosphor layer 2, and the processing is performed in the same manner as in the eighth embodiment. The second covering element assembly 29 is obtained. The upper surface of the first temporary fixing piece 10 is exposed from the opening 3'. Further, the bottom portion 36 (projecting portion) is not formed in the first phosphor layer 2.

In the step (3), as shown in FIG. 14B, the second phosphor layer 84 is in direct contact with the upper surface of the first temporary fixing piece 10 at the opening 3'.

Then, in step (4), as shown in FIG. 14D, the coated optical semiconductor element 5 is not transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

(Example corresponding to the sixth embodiment)

Example 9

The first coating layer 82 having a flat shape is prepared from a transparent resin composition containing a phenyl-based polyoxyn resin composition, and 100 parts by mass of the methyl-based polyoxyxene resin composition, and the yellow phosphor 15 The coated optical semiconductor element 5 shown in Fig. 11 was obtained in the same manner as in the fourth embodiment except that the coating material 43 was prepared in the same manner as in the fourth embodiment. Then, the light-emitting device 51 was obtained as shown by a chain double-dashed line in Fig. 11 .

As shown in FIG. 11, the coated optical semiconductor element 5 includes an optical semiconductor element 1, a first coating layer 82 (transparent layer) containing a phenyl-based polyoxyn resin composition, and a second phosphor layer 84 containing A yellow phosphor and a methyl polyoxy resin composition.

(Evaluation)

The following items were evaluated. These results are shown in Tables 1 to 4.

(For the temporary fixing force of the fixed piece F1)

In each of the examples and the comparative examples, the adhesion force F1 of the first covering member assembly 41 to the first temporary fixing sheet 10 after the ultraviolet irradiation was measured by a 180-degree peeling test.

(for the adhesion of the transfer sheet)

In each of the examples and the comparative examples, the adhesion force F1 of the coated optical semiconductor element 5 with respect to the first transfer sheet 27 was measured by a 180-degree peeling test.

(transferability to transfer sheet)

The transfer property of the coated optical semiconductor element 5 from the first temporary fixing sheet 10 to the first transfer sheet 27 was evaluated in accordance with the following criteria.

○: The coated optical semiconductor element 5 was successfully transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

X: The coated optical semiconductor element 5 was not transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.

(front brightness)

The front side luminance of the light-emitting device 51 was lighted at room temperature and 300 mA using a light distribution measuring system manufactured by Otsuka Electronics Co., Ltd. and a spectroscope MCPDPD-9800.

When the light emitted is set at a distance of 316 mm from the LED light source, the integrating sphere is set. When the comparative example 1 is set to 100, the amount of light in the front light (0° direction) is judged to be ○ by 90 or more, and is determined to be less than 90. ×.

(visuality)

The visibility of the coated optical semiconductor element 5 is obtained by using an LED light source to form a display panel of letter characters A to Z having a length of 20 mm and a width of 20 mm, and displaying arbitrary characters. The displayed character is read at a distance of 3 m, and if 70 or more of the 100 persons are recognized, it is judged as "○", and if it is not recognized by 70 people, it is judged as "X".

(light extraction efficiency)

The light extraction efficiency of the light-emitting device 51 was measured by using an integrating sphere and a spectroscope MCPD-9800 manufactured by Otsuka Electronics Co., Ltd. at room temperature and 300 mA, and the total luminous flux was measured and evaluated according to the following criteria.

◎: 105 [lm/W] or more

○: 90 [lm/W] or more and less than 105 [lm/W]

[Industrial availability]

The coated optical semiconductor element obtained by the manufacturing method can be flip-chip mounted on a substrate to be used as a light-emitting device.

1‧‧‧Optical semiconductor components

2‧‧‧1st phosphor layer (an example of the first coating layer)

3‧‧‧ slots

6‧‧‧Protection film

10‧‧‧1st temporary fixing piece (one example of temporary fixing piece)

11‧‧‧ Temporary fixed layer

12‧‧‧Support layer

16‧‧‧Vacuum device

17‧‧‧Confined space

18‧‧‧vacuum chamber

19‧‧‧vacuum pipeline

20‧‧‧vacuum pump

21‧‧‧Vacuum valve

22‧‧‧Atmospheric pipeline

23‧‧‧Atmospheric valve

24‧‧‧Case space

35‧‧‧Cutting machine

36‧‧‧ bottom

39‧‧‧Vacuum dispenser

40‧‧‧ nozzle

41‧‧‧1st covering element assembly

43‧‧‧Cover materials

52‧‧‧Upper first phosphor layer

61‧‧‧Adhesive layer

62‧‧‧Support tablets

L0‧‧‧ thickness

L1‧‧‧ thickness

L2‧‧‧Width

L3‧‧‧ interval

L4‧‧‧ thickness

L5‧‧‧ thickness

L6‧‧‧Width

L7‧‧‧depth (distance)

L8‧‧‧ thickness (distance)

P‧‧‧ spacing

‧‧‧‧ distance

Claims (7)

A method of manufacturing a coated optical semiconductor device, comprising the steps of: (1) preparing a plurality of optical semiconductor elements temporarily fixed on a temporary fixing sheet at intervals, and using the first cladding layer and the self-complex The first coating layer of the plurality of optical semiconductor elements is coated on the upper surface of the temporary fixing piece exposed by the optical semiconductor element, and the step (2) is between the adjacent optical semiconductor elements The first coating layer is provided with a groove that opens upward; and in the step (3), the second coating layer is filled in at least the groove, and a coating including the optical semiconductor element, the first coating layer, and the second coating layer is obtained. An optical semiconductor device; and a step (4) of peeling off the coated optical semiconductor device from the temporary fixing sheet; and in the step (3), the first coating layer is interposed in the second portion filled in the groove The coating layer is interposed between the temporary fixing sheets described above. The method of manufacturing a coated optical semiconductor device according to claim 1, wherein in the step (4), the coated optical semiconductor element is transferred from the temporary fixing sheet to a transfer sheet, and the coated optical semiconductor element is applied to the transfer sheet. The subsequent force is higher than the adhesion of the above-mentioned coated optical semiconductor element to the temporary fixing piece. The method for producing a coated optical semiconductor device according to claim 1 or 2, wherein the first cladding layer contains a first phosphor layer of a phosphor. The method of manufacturing a coated optical semiconductor device according to claim 3, wherein in the step (3), the second coating layer is filled in the groove so that the upper surface of the first phosphor layer is exposed. The method of manufacturing a coated optical semiconductor device according to claim 3, wherein in the step (3), the second coating layer is filled in the groove so as to cover the upper surface of the first coating layer. The method of manufacturing a coated optical semiconductor device according to claim 1, wherein the second coating layer contains a second phosphor layer of a phosphor. The method of manufacturing a coated optical semiconductor device according to claim 6, wherein in the step (3), the second coating layer is filled in the groove so as to cover the upper surface of the second phosphor layer.