TWI686900B - 半導體元件結構以及在基板中形成半導體插塞的方法 - Google Patents

半導體元件結構以及在基板中形成半導體插塞的方法 Download PDF

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TWI686900B
TWI686900B TW106119043A TW106119043A TWI686900B TW I686900 B TWI686900 B TW I686900B TW 106119043 A TW106119043 A TW 106119043A TW 106119043 A TW106119043 A TW 106119043A TW I686900 B TWI686900 B TW I686900B
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semiconductor
plug
boundary
semiconductor layer
semiconductor plug
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TW106119043A
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Chinese (zh)
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TW201803022A (zh
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沈明德
張庭芳
呂奎良
林文彬
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美商力特福斯股份有限公司
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW106119043A 2016-06-23 2017-06-08 半導體元件結構以及在基板中形成半導體插塞的方法 TWI686900B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/190,469 US20170373142A1 (en) 2016-06-23 2016-06-23 Semiconductor device having side-diffused trench plug
US15/190,469 2016-06-23

Publications (2)

Publication Number Publication Date
TW201803022A TW201803022A (zh) 2018-01-16
TWI686900B true TWI686900B (zh) 2020-03-01

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TW106119043A TWI686900B (zh) 2016-06-23 2017-06-08 半導體元件結構以及在基板中形成半導體插塞的方法

Country Status (6)

Country Link
US (3) US20170373142A1 (ko)
EP (1) EP3475974B1 (ko)
KR (1) KR102215893B1 (ko)
CN (3) CN116936457A (ko)
TW (1) TWI686900B (ko)
WO (1) WO2017222745A1 (ko)

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EP4407668A1 (en) * 2023-01-27 2024-07-31 Infineon Technologies Dresden GmbH & Co . KG Semiconductor arrangement with guard structure

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