TWI684843B - 電漿處理裝置及狀態預測裝置 - Google Patents

電漿處理裝置及狀態預測裝置 Download PDF

Info

Publication number
TWI684843B
TWI684843B TW107127537A TW107127537A TWI684843B TW I684843 B TWI684843 B TW I684843B TW 107127537 A TW107127537 A TW 107127537A TW 107127537 A TW107127537 A TW 107127537A TW I684843 B TWI684843 B TW I684843B
Authority
TW
Taiwan
Prior art keywords
data
plasma
plasma processing
physical environment
processing chamber
Prior art date
Application number
TW107127537A
Other languages
English (en)
Chinese (zh)
Other versions
TW201933016A (zh
Inventor
釜地義人
角屋誠浩
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW201933016A publication Critical patent/TW201933016A/zh
Application granted granted Critical
Publication of TWI684843B publication Critical patent/TWI684843B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0259—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
    • G05B23/0283—Predictive maintenance, e.g. involving the monitoring of a system and, based on the monitoring results, taking decisions on the maintenance schedule of the monitored system; Estimating remaining useful life [RUL]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW107127537A 2018-01-30 2018-08-08 電漿處理裝置及狀態預測裝置 TWI684843B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018013338A JP6914211B2 (ja) 2018-01-30 2018-01-30 プラズマ処理装置及び状態予測装置
JP2018-013338 2018-01-30

Publications (2)

Publication Number Publication Date
TW201933016A TW201933016A (zh) 2019-08-16
TWI684843B true TWI684843B (zh) 2020-02-11

Family

ID=67392349

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107127537A TWI684843B (zh) 2018-01-30 2018-08-08 電漿處理裝置及狀態預測裝置

Country Status (4)

Country Link
US (1) US11107664B2 (https=)
JP (1) JP6914211B2 (https=)
KR (1) KR102101222B1 (https=)
TW (1) TWI684843B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020123322A2 (en) 2018-12-10 2020-06-18 Lam Research Corporation Low temperature direct copper-copper bonding
KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
KR102254446B1 (ko) * 2019-06-20 2021-05-24 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN118866641A (zh) 2019-07-31 2024-10-29 朗姆研究公司 具有多个输出端口的射频功率产生器
JP7531111B2 (ja) * 2019-09-30 2024-08-09 パナソニックＩｐマネジメント株式会社 プラズマ処理の異常判定システムおよび異常判定方法
WO2021113387A1 (en) 2019-12-02 2021-06-10 Lam Research Corporation Impedance transformation in radio-frequency-assisted plasma generation
JP2021144832A (ja) * 2020-03-11 2021-09-24 東京エレクトロン株式会社 プラズマ計測装置、及びプラズマ計測方法
US11994542B2 (en) * 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
KR20230021739A (ko) 2020-06-12 2023-02-14 램 리써치 코포레이션 Rf 커플링 구조체들에 의한 플라즈마 형성의 제어
US11784028B2 (en) * 2020-12-24 2023-10-10 Applied Materials, Inc. Performing radio frequency matching control using a model-based digital twin
WO2022168313A1 (ja) * 2021-02-08 2022-08-11 株式会社日立ハイテク プラズマ処理装置
JP7710398B2 (ja) * 2022-03-17 2025-07-18 東京エレクトロン株式会社 予測方法及び情報処理装置
TW202406412A (zh) * 2022-07-15 2024-02-01 日商東京威力科創股份有限公司 電漿處理系統、支援裝置、支援方法及支援程式
JP2024016522A (ja) * 2022-07-26 2024-02-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
JP2025066441A (ja) * 2023-10-11 2025-04-23 東京エレクトロン株式会社 プラズマ処理装置およびシャワーヘッド

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
TW492106B (en) * 2000-06-20 2002-06-21 Hitachi Ltd Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing
US20020149317A1 (en) * 2000-09-22 2002-10-17 Akira Nakano Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level
TW508693B (en) * 1999-08-31 2002-11-01 Tokyo Electron Limted Plasma treating apparatus and plasma treating method
TW200527256A (en) * 2004-01-08 2005-08-16 Tokyo Electron Ltd Plasma processing method and apparatus thereof
CN102156443A (zh) * 2011-03-17 2011-08-17 浙江大学 一种等离子体裂解煤工艺过程的三维可视化数据监控方法
CN106298502A (zh) * 2015-05-18 2017-01-04 中微半导体设备(上海)有限公司 一种利用等离子体对多层材料刻蚀的方法
JP2017004827A (ja) * 2015-06-12 2017-01-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置の制御方法及び記憶媒体
CN106663625A (zh) * 2014-12-26 2017-05-10 A·Sat株式会社 等离子体蚀刻装置用电极上设置的气体导入孔的测量方法、电极、电极的再生方法、再生电极、等离子体蚀刻装置、气体导入孔的状态分布图及其显示方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU87812A1 (fr) 1990-09-26 1992-05-25 Arbed Dispositif de manutention automatique d'objets
WO2002003441A1 (en) 2000-07-04 2002-01-10 Tokyo Electron Limited Operation monitoring method for treatment apparatus
JP4570736B2 (ja) * 2000-07-04 2010-10-27 東京エレクトロン株式会社 運転状態の監視方法
US6908529B2 (en) * 2002-03-05 2005-06-21 Hitachi High-Technologies Corporation Plasma processing apparatus and method
JP4455887B2 (ja) * 2002-03-28 2010-04-21 東京エレクトロン株式会社 電気的特性を利用して、プラズマ反応炉内の膜の状態を判断するシステムおよび方法
JP2004039952A (ja) * 2002-07-05 2004-02-05 Tokyo Electron Ltd プラズマ処理装置の監視方法およびプラズマ処理装置
WO2004019396A1 (ja) 2002-08-13 2004-03-04 Tokyo Electron Limited プラズマ処理方法及びプラズマ処理装置
JP2004349419A (ja) * 2003-05-21 2004-12-09 Tokyo Electron Ltd プラズマ処理装置の異常原因判定方法及び異常原因判定装置
JP6328071B2 (ja) 2015-03-31 2018-05-23 東芝メモリ株式会社 異常予兆検知システム及び半導体デバイスの製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
TW508693B (en) * 1999-08-31 2002-11-01 Tokyo Electron Limted Plasma treating apparatus and plasma treating method
TW492106B (en) * 2000-06-20 2002-06-21 Hitachi Ltd Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing
US20020149317A1 (en) * 2000-09-22 2002-10-17 Akira Nakano Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level
TW200527256A (en) * 2004-01-08 2005-08-16 Tokyo Electron Ltd Plasma processing method and apparatus thereof
CN102156443A (zh) * 2011-03-17 2011-08-17 浙江大学 一种等离子体裂解煤工艺过程的三维可视化数据监控方法
CN106663625A (zh) * 2014-12-26 2017-05-10 A·Sat株式会社 等离子体蚀刻装置用电极上设置的气体导入孔的测量方法、电极、电极的再生方法、再生电极、等离子体蚀刻装置、气体导入孔的状态分布图及其显示方法
CN106298502A (zh) * 2015-05-18 2017-01-04 中微半导体设备(上海)有限公司 一种利用等离子体对多层材料刻蚀的方法
JP2017004827A (ja) * 2015-06-12 2017-01-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置の制御方法及び記憶媒体

Also Published As

Publication number Publication date
KR20190092218A (ko) 2019-08-07
US11107664B2 (en) 2021-08-31
TW201933016A (zh) 2019-08-16
JP6914211B2 (ja) 2021-08-04
KR102101222B1 (ko) 2020-04-17
JP2019133785A (ja) 2019-08-08
US20190237309A1 (en) 2019-08-01

Similar Documents

Publication Publication Date Title
TWI684843B (zh) 電漿處理裝置及狀態預測裝置
US6985215B2 (en) Plasma processing method and plasma processing apparatus
KR102033438B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 장치 상태 예측 방법
US7289866B2 (en) Plasma processing method and apparatus
CN100552889C (zh) 等离子体处理装置
KR102373933B1 (ko) 반도체 가공 장치를 진단하는 진단 시스템 및 그것의 제어 방법
US7389203B2 (en) Method and apparatus for deciding cause of abnormality in plasma processing apparatus
US20050125090A1 (en) Method and apparatus for evaluating processing apparatus status and predicting processing result
KR100628392B1 (ko) 처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템
JP2004039952A (ja) プラズマ処理装置の監視方法およびプラズマ処理装置
KR101094598B1 (ko) 플라즈마 챔버 감시 장치 및 그 방법
KR20140098477A (ko) 플라즈마 마이크로 아킹 예측 방법 및 그를 이용한 생산 설비의 플라즈마 공정 관리 방법
KR20070019297A (ko) 플라즈마 장치용 비침투식 이온 에너지 분포 측정 시스템및 이를 이용한 이온 에너지 분포 측정 방법
US20260005074A1 (en) Real-time computer vision end-point detection pipeline
US20250372358A1 (en) Substrate processing system and substrate processing method for acquiring plasma emission data inside a chamber and predicting a state inside the chamber by inputting the emission data
US20240393761A1 (en) Vibration determination in substrate processing systems
TW202612020A (zh) 即時電腦視覺端點偵測管線
KR20260028411A (ko) 반도체 제조 장비 및 반도체 제조 장비의 모니터링 방법
JPH06104214A (ja) プラズマ処理装置およびその故障予防診断方法
JPH11238723A (ja) プラズマ処理のモニタリング方法及び装置