TW508693B - Plasma treating apparatus and plasma treating method - Google Patents

Abstract

In the invented plasma treating apparatus, a gas inlet (12) and an outlet (13) are disposed inside the chamber (11) for introducing and exhaustion (22) of each kind of gas (21). A sample (13) to be etched is carried on an electrode (17b), a high frequency bias current from a high frequency power source (4) is applied to the sample (3). A magnetic field is generated by the electromagnets (14) disposed around a plasma generation region (20); a microwave (23) is introduced from a waveguide (15) connected above through a microwave introducing window (16); and an electron-cyclotron resonance is excited in the gas 21 to generate a plasma. At least one face of the microwave introducing-window (16) exposed to the plasma generation region 20 is composed of quartz, and the gas (21) contains fluorine. By using the invented apparatus, the substance deposited to the surface of a microwave introducing-window, when etching a sample, can be removed.

Description

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508693 A7 B7_ V. Description of the Invention (1) Background of the Invention Field 1 The present invention relates to the technology of plasma etching gold, platinum, silver and conductive metal oxides, especially related to electricity The technology of cleaning and introducing a microwave-type plasma etching device during slurry generation. In the prior art, such as high-frequency devices and ferroelectric memory used in mobile communication devices such as mobile phones, metals such as gold, platinum, and iridium were used as wiring and electrode materials in the LSI. For example, in high-frequency devices, gallium arsenide is used as a component of the substrate, and gold is used for gates and the like because of its characteristics. In addition, metal oxides are used for the dielectric in ferroelectric memory, so the electrode material needs oxidation resistance. In addition, in order to avoid the reduction of the dielectric caused by the electrode material, gold, platinum, and the like that are less reactive are used. In these patterns (Reactive Ion Etching (RIE) devices are used for patterning), but with the miniaturization of the devices, such as the Electron Cyclotron Resonance (ECR) plasma device and surface wave plasma Etching devices and the like often employ an etching technique using a high-density plasma. However, unlike silicon and aluminum, these metals have low reactivity with the plasma. When plasma treatment is performed, these metals are mainly sputtered directly from the material being processed due to sputtering and attached to the plasma device. Processing room. The substance adhering to the processing chamber in this way has conductivity. A plasma etching apparatus using an electrode to generate a plasma, even if a conductive substance is attached to the electrode, does not significantly affect the generation of the plasma. However, the introduction of microwaves to generate electricity-4- This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) --------------------- Order --------- line. (Please read the notes on the back before filling out this page) 508693 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs When a conductive substance is attached to the microwave introduction window, "microwaves are reflected thereon, and it is difficult to generate plasma. In addition, when a part of the metal reacts with chlorine and fluorine, the vapor pressure of the vapor and fluoride of the metal For example, AuF3 under normal pressure is about 30 (TC sublimation, PA is gasified at the eye, IrF3 is decomposed at 25.0, 3 W is said to be X: gasification above. Therefore, even if the plasma treatment, the reaction The vapor of the substance is also difficult to discharge, and it still adheres to the processing electrical properties, which causes the above-mentioned problem of difficult plasma generation. Furthermore, when the gas is used as an etching gas, it is corroded on the substrate on which the metal to be etched is formed separately. Metal film and insulating film, such as osmium alloy, osmium alloy, strontium bismuth acid SBT), barium titanate gill (BST) and other high dielectric constant metal oxides cause damage, so it is not suitable for use. In addition, in addition to the above-mentioned metal materials, in addition to the above metals, tin oxide, oxidation #, oxidation Conductive oxides such as iridium, oxides, and oxides are added to produce conductive oxides. These oxides also adhere to the processing chamber due to sputtering, especially to the microwave introduction window, causing the above. Problem Summary of the Invention The purpose of the present invention is to introduce a microwave through a microwave introduction window to generate a plasma, and in the technique of performing an etching based on the plasma, to reduce the generation of a plasma that is hindered by attachments. Invention-A plasma processing method of various aspects is to introduce a microwave through a microwave introduction mechanism in a treatment that can hold a layer with a conductive layer and observe a% layer, and introduce it from the entrance of the office, and introduce it at the entrance of the body. Gas, conductive with plasma-5- — — — — — — — — — — — II · 1111111 · 11111111 IAWI II-II-I-I-I-II * —-I-— II__ ( Read the notes on the back before filling in this page) ^ 8693 A7 B7 V. Printed invention description (layer, its characteristics, horse, microwave introduction mechanism in the microwave introduction mechanism by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, at least exposed to plasma) The lower part is composed of quartz, and the gas is at least the basic. The chaotic lice body simultaneously etches the quartz part during the treatment. In one embodiment of the plasma processing method, the gas does not contain fluorine depending on the element. Other aspects of the present invention The sample plasma treatment method is: in a processing chamber capable of containing a sample having a conductive layer, a microwave is guided through a microwave guiding mechanism, a gas is introduced from a gas introduction port, and the conductive layer is treated with a first plasma; When the specific information changed by the first plasma treatment meets specific conditions, the sample is taken out, and the portion exposed to the plasma of the microwave introduction mechanism is cleaned with the second plasma. When this plasma processing method is used, after the sample is taken out, the second plasma is used to clean the part of the conductive material that is exposed to the plasma of the microwave introduction mechanism because the conductive layer is treated with the first plasma. Therefore, the second plasma can be cleaned without damaging the material of the sample. In addition, 'specific information such as the number of samples processed can prevent a large amount of conductive substances from adhering to the portion exposed to the plasma of the microwave introduction mechanism due to the large number of samples processed'. In addition, because it reflects the state of the first plasma, the position information of the microwave integrator between the microwave generation source and the processing chamber, or specific information such as the microwave reflection power, it is detected that it is exposed to the plasma of the microwave introduction mechanism. Since the state where the conductive substance is adhered and the plasma is changed is cleaned, it is possible to prevent a large amount of the conductive substance from adhering to the part exposed to the plasma of the microwave introduction mechanism. -6-This paper size applies to Chinese National Standard (CNS) A4 specifications (210 χ 297 Public Love —— — — — ———----,% (Please read the precautions on the back before filling this page)

Order --------- line J 508693 Α7 Β7 V. Description of the invention (4) An embodiment of the plasma processing method is that at least the microwave introduction mechanism exposed to the plasma is composed of quartz, The second plasma is generated with a fluorine-containing gas. In addition, the conductive layer includes a metal of gold, silver, copper, platinum group, indium, gallium, germanium, hafnium, phosphorus or a metal alloy thereof, or a metal oxide. An aspect of the plasma processing apparatus of the present invention includes a processing chamber that can hold a sample having a conductive layer, the conductive layer being the object of the plasma etching process, and a gas introduction port that introduces a fluorine-containing gas into the process A room; and a microwave introduction mechanism, which introduces a microwave that generates plasma from a gas into a processing chamber, and at least a portion exposed under the plasma is composed of quartz. The microwave introduction mechanism should preferably have a microwave introduction window made of quartz. The quartz wave introduction window may be provided to fill a through hole having a conductor having a through hole. In addition, a microwave introduction mechanism according to an embodiment of the present invention has a microwave introduction window and a partition plate ', which isolates the microwave introduction window from the electric chirp, and at least a portion exposed to the plasma is made of quartz. The microwave introduction window may be formed of a conductor through a hole. When a plasma processing apparatus having such a structure is used, the microwave introduced from the microwave introduction mechanism generates a plasma from a fluorine-containing gas. Even if the conductive layer and its compound are adhered to the part exposed to the plasma of the microwave introduction mechanism by the plasma treatment, the fluorine in the plasma etches this part of the microwave introduction mechanism, thereby preventing an influence on the introduction of microwaves. The plasma processing apparatus of other aspects of the present invention includes: a sample stage, which is loaded with a sample, the sample has a conductive layer of a plasma etching process object, and high-frequency power can be applied to the sample; a cover of the sample stage , Which is covered on the sample table. The paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297). ------------- 羲 (Please read the notes on the back first (Fill in this page again) Order --------- Line. Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-ϋ ϋ ϋ ί n ϋ ϋ ϋ 508693 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (5) The enclosure 'is not in contact with the sample, at least the part exposed to the plasma is made of quartz; the processing chamber' which can accommodate the sample stage and the sample stage cover; the gas introduction port 'which will contain A fluorine gas is introduced into the processing chamber; and a microwave introduction mechanism is used to introduce microwaves that generate plasma from the gas into the processing chamber. With this structure, the conductive layer and its compounds are not adhered to the sample stage due to the plasma treatment, and when they are attached to the sample stage cover, the fluorine in the plasma etches the sample stage cover, preventing external application. High-frequency power is affected. The upper end of the cover of the sample stage should be lower than the position where the sample is mounted on the sample stage. This prevents the upper end of the sample stage cover from interfering with the contact between the sample and the sample stage, so that high-frequency power can be sufficiently applied to the sample. A plasma processing apparatus according to another aspect of the present invention includes: a processing chamber that can hold a sample having a conductive layer, the conductive layer being the object of the plasma etching process; a gas introduction port that introduces gas into the processing chamber; and A microwave introduction mechanism is used to introduce a microwave that generates plasma from a gas into a processing chamber; the microwave introduction mechanism includes: a waveguide that conducts microwaves; a microwave introduction window that has microwave penetration between the waveguide and the processing chamber And the reflection amount detection method, which detects the reflection amount of microwaves; when the microwave reflection amount in the processing chamber exceeds a specific amount, a plasma is generated to clean the portion of the microwave introduction window exposed under the plasma. # With this configuration, by conducting an etching treatment on the conductive layer, the amount of microwave reflection increased due to the conductive material attached to the window of the Zhengzheng wave introduction window can be cleaned when it is increased, so it can be cleaned. Perform stable plasma processing. Another aspect of the present invention includes a plasma processing device including a processing chamber, which can be adapted to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) for this paper size. ------------ -------- Order --------- line (please read the notes on the back before filling out this page) Printed by the Employee Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 508693 A7 __________ B7_____ V. Description of Invention (6) To accommodate a sample with a conductive layer, which is the object of plasma etching treatment; a gas introduction port, which introduces gas into the processing chamber; and a microwave introduction mechanism, which is a microwave that generates plasma from a gas. Into the processing chamber; the microwave introduction mechanism has: a waveguide, which conducts microwaves; a microwave introduction window, which has microwave permeability between the waveguide and the processing chamber; and a microwave integrator, which controls the insertion of the microwave conducting part The position or number of components is integrated with the plasma of the microwave; when the position or number of components inserted into the microwave conducting part of the microwave integrator exceeds a certain range, a plasma is generated to clean the microwave introduction window exposed to the plasma. section. With this configuration, the conductive layer is etched to detect the position or insertion amount of components of the microwave integrator that have been changed due to the conductive material attached to the portion of the microwave introduction window exposed to the plasma. When it exceeds a certain range, the microwave introduction window is cleaned, so stable plasma processing can be performed. Brief Description of the Drawings Fig. 1 is a schematic sectional view of a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of a sample according to a first embodiment of the present invention. Fig. 3 is a schematic sectional view of a second embodiment of the present invention. FIG. 4 is a large cross-sectional view of the area A in FIG. 3. Fig. 5 is a schematic cross-sectional view of a sample according to a second embodiment of the present invention. Fig. 6 is a schematic sectional view of a third embodiment of the present invention. Fig. 7 is a sectional view of a first modification of the third embodiment of the present invention. Fig. 8 is a sectional view of a second modification of the third embodiment of the present invention. Fig. 9 is a sectional view of a third modification of the third embodiment of the present invention. China National Standard (CNS) A4 Specification (210 X 297 mm) ----—— — — — — — — — — — IIIIIII t 11111! * ^ — — — — — — — — — — — — — — — — — — — — — — — — — ————————————— II___I I ( Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508693 A7 —----------- -B7 __— _____ V. Description of the invention (7) Figure 10 This is a sectional view of a fourth modification of the third embodiment of the present invention. Fig. 11 is a sectional view of a fifth modification of the third embodiment of the present invention. FIG. 12 is a plan view of the structure shown in FIG. 11. Fig. 13 is a schematic sectional view of a fourth embodiment of the present invention. Fig. 14 is a schematic sectional view of a sample according to a fourth embodiment of the present invention. FIG. 15 is a flowchart of a cleaning process according to a fourth embodiment of the present invention. Fig. 16 is a flowchart of a cleaning process according to a modification of the fourth embodiment of the present invention. Description of a suitable embodiment 1. An embodiment of a bear Figure 1 is a cross-sectional view showing a schematic configuration of an ECR plasma etching apparatus according to a first embodiment of the present invention. A gas introduction port 12 and an exhaust port 13 are provided in the processing chamber U, and gas 21 is introduced and exhausted 22 by a gas introduction mechanism and an exhaust mechanism not shown in the figure, respectively. The processing chamber π includes a sample stage 17 ′ which is insulated from the processing chamber i ′ and has: an electrode section 7b, which is connected with a high-frequency power source 4 plus a high-frequency bias current; and an insulation section 17a, which promotes the electrode section nb and the processing The chamber 11 is insulated and carries an electrode portion 17b. Therefore, the sample 3 to be etched is mounted on the electrode portion 17b, and a high-frequency power source 4 and a high-frequency bias current are applied to the sample 3. Above the sample and stage 17 in the processing chamber 11 is a plasma generating area 20. In the plasma generating area 20, a magnetic field is generated by the electromagnets 14 arranged around it, and at the same time, a microwave 23 is introduced from a waveguide 15 connected above through a microwave introduction window 16 that penetrates the microwave. An electron cyclotron is excited to the gas 21 to generate a plasma. For example, the magnetic field generated by the electromagnet 14 is set to 875 Gauss, and the frequency of the microwave 23 is set to 2.45 GHz. -10-This paper size applies to China National Standard (CNS) A4 (21G X 297 public love) " " — --------- t --------- ^ — ^ 1 (Please read the precautions on the back before filling this page) A7 -------- B7 __— ____ V. Description of the invention (8) At least the microwave introduction window 16 of this embodiment is exposed to the plasma generation area 20 One surface is made of quartz, and the gas 21 contains fluorine. Thereby, the sample 3 is etched, and the surface of the microwave introduction window 16 made of quartz is etched with a fluorine-containing plasma. Therefore, while the sample 3 is etched, it is attached to the surface of the microwave introduction window 16 The material on it was also removed. Therefore, even if the substance attached to the microwave introduction window 16 is conductive to the sample 3 for a while, the introduction of the microwave 23 will not be affected, and the plasma generation will not be hindered. FIG. 2 is a schematic cross-sectional view of a configuration example of a sample 3 according to this embodiment. A donated layer 32 and a gold layer 33 each having a thickness of about 50 nm are layered on the Kunhua substrate 31a. A patterned photoresist layer 34 is provided on the gold layer 33 as an etching mask for forming the pattern. For example, C4F8 / 〇2 / Ar gas 21 that flows into 100/10/50 sccm, respectively, and the pressure in the processing chamber 11 is controlled to 10 mTorr by the exhaust gas 22 to introduce microwaves 23, which are generated in the plasma. Plasma is generated in the area 20. By applying a high-frequency bias current of 400 KHz from the high-frequency power source 4 through the sample stage 17 in the sample 3, the fluorine plasma in the plasma was accelerated to the sample 3, and the photoresist layer 34 was used as The mask is used to etch the gold layer 33. During the single etching of the gold layer 33, gold fluoride or sputtered gold is released. Due to the decrease in the gold fluoride and the vapor pressure of gold, a considerable portion of the gold fluoride was attached to the processing chamber 丨 before being exhausted from the exhaust port 13, and also attached to the microwave introduction window 16. However, as described above, the side of the microwave introduction window 6 facing the plasma generation region 20 is etched by the plasma at the same time, so that it hardly accumulates on the microwave introduction window 16. With this treatment, 500 nm can be etched at an etch rate of about 100 nm / min. • 11 · This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the note on the back first (Please fill in this page again for matters) Order --------- Line-4 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 508693 ^ _I__I__ Printed by the Employees’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 Invention Description (9) Thick When the above-mentioned processing was performed on 25 pieces of the sample 3 continuously, the reflected power of the microwave 23 was not increased in this processing, the matching greatly changed, and the plasma was stably generated. In addition, using an ECR plasma etching device using fluorine gas as a comparative example, the microwave window 16 (not shown in the figure) is covered with a nitrided ceramic material using yttrium oxide as a binder in a general manner. During the processing of the sheet, the reflected power of the microwave 2 3 exceeded the incident power by 5%. Therefore, the sample 3 cannot be etched later. This is because gold fluoride and gold are deposited on the surface of the silicon nitride ceramic, and these conductors reflect the microwaves 23. In addition, the etching gas used in this embodiment needs to match the etching material and the required etching performance. CF4, C4F8, C5F8 and other Phrorocarbon-based gases, and SF0 and other fluorine-containing gases, NFS, F2 and other high reactivity can be used. Gas containing gas. In addition, 02, N2, and C0 may be added. For this reason, the etching characteristics of the etching gas can be adjusted. In addition, in order to improve the stability of the polyelectrolyte, a diluent gas such as Ar may be used. However, it is preferable to contain no halogens other than fluorine. This may cause corrosion of the substrate material of the sample, the member to be processed, or other members existing on the substrate due to the reaction of halogens other than fluorine with moisture. The frequency of the high-frequency and power generated by the high-frequency power source 4 is not limited to 400 KHz, but can be set to 800 KHz, 2 MHz, and 13.56 MHz in accordance with the etching material and required performance. However, the frequency of high-frequency power should be below 5 MHz, and preferably below 2 MHz. Metals and metal compounds with low reactivity with plasma, such as gold, platinum, surface, and indium, are mainly etched by ion impact sputtering and accompanying reactions. Therefore, the change of the electric field at the south frequency should be slowed down. -12- This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 public love) ----------! ---- ---- Order ---- I ---- ^ J ^ wi (Please read the notes on the back before filling out this page) 508693 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (1Q The degree to which the electrons can follow, that is, the frequency should be low enough that the ions are sufficiently accelerated by the high frequency electric field. In this embodiment, when a high frequency of 13.56 MHz is applied, the etching rate is about 10 nm / min. When it is 2 MHz, the etching rate is 11 nm / min. The microwave introduction window I6 may be made entirely of quartz, or a quartz layer may be formed on other members. For example, an A1N ceramic plate and a quartz plate may be stacked, and a quartz layer may be formed on an alumina plate by a method such as CVD. At this time, when the thickness of the quartz layer is reduced, the quartz layer is formed again, so that the microwave entrance window can be reproduced, and the running cost can be reduced. The present invention is particularly effective when the etching material is made of gold, silver, copper, platinum, or other platinum group metals, indium, gallium, germanium, kun, phosphorus, or a metal alloy thereof. In addition, when conductive metal oxides such as tin oxide, ruthenium oxide, and iridium oxide are etched, or conductive metal oxides having impurities such as indium oxide and osmium oxide are added, they can be prevented from accumulating on the microwave introduction window 16. Since the stability of processing is improved, the technique of this embodiment is effective. Second Embodiment FIG. 3 is a schematic sectional view of an eCR plasma etching apparatus according to a second embodiment of the present invention. In contrast to the structure shown in FIG. 1, the inner wall of the processing chamber is provided with a bell jar type reaction. A chamber (lnner-belljar) 18a and an anti-touch plate 18b are attached to the sample stage 17 with a sample stage cover 丨 7c made of quartz, and the microwave introduction window 丨 6 is replaced with a microwave introduction window 10a and a quartz top plate 1613. The bell jar-type reaction chamber 18a is disposed in the plasma generating area 20, and the touch prevention plate 18b is disposed below the plasma generating area 20. The internal bell-type reaction chamber i8a may be made of aluminum 'or may be made of ceramics such as quartz, alumina, and A1N. The anti-touch plate 18b can be made of quartz, or it can be made of aluminum and other metals and quartz, alumina, -13- This paper has been used in China National Standard (CNS) A4 (210 X 297) ----- --------------- Order ---------— ^ wi (Please read the notes on the back before filling this page)

Printed by A1N and other ceramics in the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The 4 "mouth cover i7c covers the insulation part 17 & of the sample stand 17 and ionizes it. Figure 4 is an enlarged cross-sectional view of area A in Fig. 3. As shown in the figure, the sample stand cover ㈣ should cover the electrode. The surface of the portion 17b. However, if the cover of the sample stage is large above the private pole # 17b, the contact between the sample 3 and the electrode portion nb is insufficient, and the high-frequency bias current cannot be sufficiently applied. Therefore, the sample The upper surface of the stage cover 17c should be lower than the upper surface of the electrode portion nb. The quartz top plate 16b in this μ shape functions as an isolation plate, and isolates the microwave introduction window 16a from the plasma generating area 2G. The fluorine in the gas core. With this, since the surface of the top plate 16b is also etched at the same time as the etching of the sample 3, even if the microwave window 16a is constituted by a material that cannot be etched by a fluorine plasma such as A1N, the same as the first embodiment can be obtained In addition, since the sample stage cover 17 made of quartz covers the insulating portion i7a, a conductive substance is not adhered to the insulating portion 17a. The conductive substance attached to the sample stage cover 17c can also be used. Remove the specimen stage cover 1 by etching. Therefore It is also possible to avoid the high-frequency bias current provided by the sample stage n due to the adhesion of the conductive material. Fig. 5 is a schematic cross-sectional view of a configuration example of the sample 3 of the present embodiment. It is formed on the silicon substrate 311). .Platinum layer 36a, SBT (SrBi2Ta209) layer 37, platinum layer 36b, platinum layer 36a, 1 // 111, 10011111 each with a thickness of about 100111. A patterned photoresist layer 38 is provided on the platinum layer 36b. As an etching hood for drawing its pattern. For example, 'Gas 21 series flows into 2000/1105 (0111/4 / 〇2 gas of ^ 111, and the pressure in the processing chamber 11 is controlled by the exhaust gas 22 to $ mTorr. With the introduction of microwave 23 paper size applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) --------------------- order ---- ----- Line (Please read the note on the back? Matters before filling out this page) 508693 A7 B7 12 V. Description of the invention (Plasma is generated in the plasma generation area 20. On sample 3 'through the sample The stage 17 'adds a high-frequency bias current of 2 MHz from the high-frequency power source 4 to 100 W, which accelerates the fluorine plasma in the plasma toward the sample 3, and uses the photoresist layer 38 as a light shield to etch the platinum layer 36b. During the etching process, platinum fluorides or sputtered platinum are released into the device. Due to the low vapor pressure of these platinum fluorides and platinum, a considerable part of them is attached to the exhaust port 13 before being exhausted. The processing chamber ^ j is also attached to the top plate 16b and the sample stage cover 17c. However, as described above, platinum and its fluoride are hardly deposited on the top plate i 6b and the sample stage cover 17c. As a result, This kind of treatment can etch a 100 nm-thick platinum layer 36b at an etching rate of about 50 nm / min. In this treatment, no increase in the reflected power of the microwave 23 and a large change in matching were found, and a stable plasma was generated. . In addition, it was not found that the reflected power of the high-frequency power added from the high-frequency power source 4 was increased, or there was abnormal discharge near the sample stage 17 and the etching rate was not reduced. In addition, since the sample stage cover 17c and the top plate 16b can be applied separately to exert the effect, they do not need to be provided at the same time. Only the top plate 16b may be provided, or only the sample stage cover 17c may be provided. As described above, the sample stage cover 17c and the top plate 16b may be made entirely of quartz, and a quartz layer may be formed on the surface of other members. For example, you can re-register A1N ceramic materials and quartz components, or you can form a quartz layer on this structure. In this case, when the thickness of the quartz layer is thin, the cover of the sample stage and the top plate can be reproduced by forming the quartz layer again, thereby reducing the running cost. • 15- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -------- ^ --------------- ------------------ 508693 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 Description of invention (13) In addition, the 'sample stage cover 17c can also be covered only with insulation In the vicinity of the electrode portion 17b of the portion 17a, the vicinity of the electrode portion 17b may be composed of only quartz, and other portions may be composed of alumina, aluminum, or the like. Third Embodiment Fig. 6 is a sectional view showing a schematic configuration of a microwave plasma etching apparatus according to a third embodiment of the present invention. This device is also provided with a gas introduction port 12 and an exhaust port 13 in the processing chamber 11 similarly to the device shown in the first embodiment, and performs gas 2 by a gas introduction mechanism and an exhaust mechanism not shown in the figure, respectively. 1. Introduction and exhaust 22. In the processing chamber 11 there is a sample stage 17 insulated from the processing chamber 11 and a high-frequency power supply 4 is applied thereto with a high-frequency bias current. Since the sample 3 to be etched is mounted thereon, a high-frequency bias current is applied to the sample 3 by a high-frequency power source 4. A waveguide 15 is connected above the processing chamber 11 and a microwave 23 is introduced from there through a microwave introduction window 16 made of quartz. However, no electromagnet 14 such as an ECR plasma etching device is provided under the microwave introduction window 16 (ie, the electric field generated by the processing chamber 1 1) promotes the gas 21 to generate electrical equipment. The present invention is also applicable to such ECR Of course, as described in the second embodiment, the microwave window 16a may be isolated from the processing chamber 11 by the quartz top plate 16b, or a quartz test may be provided on the sample table π. Sample cover 17c. Even other parts can be provided with an internal bell-type reaction chamber 18a and anti-touch plate 18b. Sample 3 adopts the structure shown in Figure 2, and gas 2 1 flows into 100/10/50 seem respectively. C4F8 / 02 / Ar gas, while controlling the pressure in the processing chamber 1 1 to 50 mTorr with exhaust gas 22, with the introduction of 2.45 GHz microwave 23, -16-This paper size applies Chinese National Standard (CNS) A4 specifications ( 210 X 297 mm) --------------------- Order --------- line (Please read the precautions on the back before filling this page) V. Description of the invention (14) A plasma is generated in the processing chamber 11. On the sample 3 ', through the sample stage 17, a high-frequency bias of 400 KHz is added from the high-frequency power source 4. The current is 100 W, and the gold layer 33 is etched in the same manner as in the first embodiment. During the engraving process, gold fluoride or gold shot by the money is released into the device, and is attached to the microwave introduction window 16 However, as described above, gold and its fluoride are hardly deposited on the microwave introduction window 16. With this process, a 500 nm-thick gold layer 33 can be etched at an etching rate of about 170 nm / min. During the processing, no increase in the reflected power of the microwave 23 and a large change in matching were found, and a plasma was stably generated. In addition, when this treatment was continuously performed on 25 pieces of sample 3, no increase in the reflected power of the microwave 23 and matching were found. Large changes, and stable generation of plasma. In addition, the first variation of this device, such as a surface wave plasma device, as shown in Figure 7, a dielectric 15a can be provided in the waveguide 15. In addition, the second type Alternatively, a conductor 19c may be provided at the 1 end of the processing chamber 11 as shown in FIG. 8, which has a through hole to selectively introduce microwaves 23 into the processing chamber. FIG. 9 shows the configuration shown in FIG. Additional conductor i9a with through hole ι91 '' ^; A third cross-sectional structural view of the cost embodiment. The conductor 19a is isolated from the processing chamber 11 by the microwave introduction window 16, and the conductor i9a is not exposed to the plasma. When the plasma treatment is performed on the sample 3 No conductive substance is attached. By making the conductor 19a in close contact with the microwave introduction window 16 or spaced a certain distance, the electric field distribution in the processing chamber 11 can be more effectively controlled. In addition, the conductor 19a and the microwave introduction in this aspect The window 16 can also be understood as a microwave introduction window and a quartz isolation plate. 17- The size of this paper applies to China National Standard (CNS) A4 (21〇X 297 mm) ------------ t (Please read the precautions on the back before filling this page) Order- -------- Line-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508693

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (15) FIG. 10 is a fourth embodiment of the present embodiment in which the microwave introduction window 16 in the configuration shown in FIG. 6 is replaced with a conductor 19b having a through hole 192 Varying structural section. The passage hole 192 is filled with quartz, and it can also be regarded as a microwave introduction window made of quartz in the passage hole 1%. As a result, even when the plasma treatment is performed on the sample 3, the conductive material does not accumulate in the through hole 92. In addition, in the configuration shown in Figs. 6 to 10, the shape of the waveguide on the microwave introduction window 16 may be circular. FIG. U is a fifth cross-sectional view of the present embodiment in which the annular waveguide 15 is adopted in the microwave introduction window 16 in the structure shown in FIG. 6, and FIG. 12 is a plan view thereof. The cross-sectional view of the zigzag imaginary line in the direction of the arrow AA in FIG. 12 corresponds to FIG. In the ring shape on the microwave introduction window 16, the waveguide 15 periodically has a through hole 193 opened to the microwave introduction window 16. Therefore, the size of the microwave 23 introduced into the waveguide 15 is controlled, and a standing wave is formed in the circular shape. By arranging the passage hole 193 at a position corresponding to the abdomen of the standing wave, the microwave introduction window 16 can be used in the processing chamber η. The end forms a good electric field distribution. In this aspect, the gas 21 may be set to prevent the conductive material from being deposited on the microwave introduction window 16. Fourth Embodiment Fig. 13 is a cross-sectional view showing a schematic configuration of an ECR plasma etching apparatus according to a fourth embodiment of the present invention. The difference from the configuration shown in the first embodiment is that a stub microwave integrator 41 and a standing wave detector 61 are provided in the waveguide 15. Observed from the processing chamber?, At the distal end of the stub-type microwave integrator 41 and the standing wave measuring device 61, a microwave oscillator 5 is connected to the waveguide 15. This embodiment does not clean the plasma introduction window 16c while plasma processing the sample 3. The stub-type microwave integrator 41 has two sets of stubs 4 1 a, 41 b. Each short cut-18-This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) -------------------- Order ---- ----- Wire (please read the precautions on the back before filling this page) ^ 08693 A7 B7 V. Description of the invention (16) The wires are a pair of metal rods connected by adjusting the amount of insertion into the waveguide 15 'Integrate the impedance of the microwave oscillator 5 and the plasma generated in the processing chamber 11 to reduce microwave reflection from the plasma. The reflection amount can be calculated based on the standing wave ratio obtained by the standing wave measuring device 61 having a stub 61 a inserted into the waveguide 15. With this, according to the measurement results of the standing wave measuring device 61, the two sets of stubs 41 &, 4 1 b are respectively inserted into the waveguide 15 and the stubs 4 1 a, 4 1 b can be integrated for impedance integration. Control in normal direction. The insertion amounts of the stubs 4 1 a and 4 1 b respectively into the waveguide 15 can be determined as the integrated position information τυΝΕ 1, TUNE2. Of course, the insertion of the stubs 41a and 4 lb into the waveguide 5 is not limited to the feedback from the standing wave measuring device 61. In addition, in addition to the stub-type microwave integrator, an E-stub can also be set in the waveguide, and the internal length of the stub can be changed by changing the position of the short-circuit board provided inside, thereby using the integration 4E Tuner and other integrators. FIG. 14 is a schematic cross-sectional view of a sample β of this embodiment. A silver layer 39 is formed on a substrate 3 1 c made of silicon oxide. The silver layer 39 includes: a flat layer 39a having a thickness of 1 m, which is formed on the entire substrate 3c; and a protrusion 39b having a thickness of 5 m, which is formed on a part of the flat layer 39a. This can also be considered as etching with a thickness of 1 # 111 using a metal hood with a height of 5 " m. By uniformly etching the entire sample 3 for 1 μm, except for the protrusion 3 9b, the entire flat layer 39a is removed to expose the substrate 3 lc, and a part of the protrusion having a height of 5 " m iridium can be formed. shape. However, in order to avoid etching the substrate 3 lc of silicon oxide, it is not suitable to use fluorine in the plasma gas, and Ar, which hardly etches the silicon oxide film, is used as the gas 2 1. China National Standard (CNS) A4 Specification (210 X 297 mm) (Please read the notes on the back before filling this page) -------- Order --------- Line 'Ministry of Economic Affairs A7 printed by the Intellectual Property Bureau employee consumer cooperative

V. Description of the invention (17) Excluding records ^. A sample 3 is mounted on the sample stage 17, and a magnetic field of 875 Gauss is formed in the plasma generation area by the electromagnet 14 and the processing chamber! !! The radon-containing gas «Bean 21 'which flows into 500 sccm inside is controlled to a pressure of 10 mT0rr by the exhaust gas 22. By introducing a microwave 23 of 2 45 GHz, a plasma is generated in the plasma generating area 20. After that, a high-frequency bias current of 4 00 K Κ Z is applied to the sample 3 via the sample stand 17 and 0 0 w. By the above operation, sputtering of the iridium layer 39 is performed. Since the plasma in this embodiment does not contain fluorine, part of the sputtered iridium adheres to and accumulates on the microwave window 16c. When the process is continued without cleaning, the thickness of iridium deposited on the microwave window 16c gradually increases. Since the deposited iridium has conductivity, the reflection of the microwave 23 is increased, and the microwave 23 cannot be introduced into the processing chamber 11, that is, plasma cannot be generated. In order to prevent such a phenomenon, the present embodiment detects the increase in the amount of the conductive material plutonium on the microwave introduction window 16c by using information such as the state of the plasma. When the information exceeds the appropriate range, the microwave introduction window 16c is cleaned. Of course, similarly to the second embodiment, a sample stage cover 17c may be used. Specifically, if the above-mentioned integrated position information TUNE 1 and TUNE 2 ′ are used as the information reflecting the state of the plasma. The lower limit 値 L 丨 and the upper limit 値 H j are used as the appropriate range of the integrated position information TUNE 1, and the lower limit 値 L2 and the upper limit 値 H2 are used as the suitable range of the integrated position information TUNE2. These "normal times" are the integrated position information tune 1 and TUNE 2 6 when the plasma is stably etched, and each lower limit and upper limit. These can be set in advance. In addition, when the microwave introduction window 16c is made of quartz, the microwave introduction window i6c is -20- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) —.--------- -—----- Order --------- line (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (Manufactured) which 93 5. Description of the invention (18) Washing is performed in addition to the plasma treatment of sample 3, and a fluorine-containing gas 21 is additionally introduced to generate a plasma, thereby removing the iridium deposits attached to the microwave introduction window 16c membrane. When the iridium deposited on the microwave introduction window 16c increases, the impedance change of the processing chamber 11 is observed from the microwave integrator 41, and the integrated position information TUNE1 and TUNE2 are also changed by the feedback from the standing wave measuring device 61. Therefore, if these changes are monitored, an increase in the amount of iridium deposited on the microwave window can be detected. FIG. 15 is a flowchart of a cleaning process according to this embodiment. First, when the plasma treatment of the sample 3 is started, in step S11, the M-washing flag indicating whether or not to perform washing is set to 0. The cleaning flag 値 in this embodiment uses 0/1 'to indicate that no cleaning is performed / performed. After I, the integrated position information TUNE1 and TUNE2 are measured, and the plasma treatment is performed on the sample 3 at the same time, such as an etching treatment (step S12). Although it is shown in the flowchart that the process proceeds from step S12 to steps S13 and S14, in steps sn, S14, and S15, plasma processing is also performed on the sample 3. In step S13, it is determined whether the integrated position information TUNE1 and TUNE2 are within the cut-through range. That is to say, whether the integrated location information Ding [; ^ [£ 1 is above the lower limit 値 L1, below the upper limit ，, whether the integrated position information Ding ^^^ is above the lower limit 値 L2, the upper limit 値] ^ 2, when both When all the conditions are satisfied, proceed to step S. As long as it is not satisfied, proceed to step S14, and clean the flag handle $ and 疋 疋 1 0. Integrated position information in the plasma processing TUNE1, TUNE2 measurement and judgment of step sn It can also be automatically executed by a control device not shown in the figure. In step ㈣5, if it is judged that the plasma processing is completed, step S16 is performed. The private paper size applies the Zhongguanjia Standard (CNS) A4 specification ⑵〇X 297 Public (please read the note on the back? Matters before filling out this page)-· * 1 i · — amaw H ϋ nn J \ an ϋ n Speech ----------------,- -------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508693 5. Description of Invention (19) and carry out the sample removal. Otherwise, return to step S12, continue to perform plasma processing 0, and after the sample is removed, in step S17, consider cleaning the flag 値. If 値 is 1, step sn is rYES ", proceed to step 518, and perform clear second horse. If 値 is 0, then step S17 is" N0 ", and carry in the next sample. β /. In step S18, a gas η of CFVO2 of 20/10 sccm is flowed into each, and the pressure is set to 3 mT0rr by the exhaust gas 22. Plasma generation continues to etch the microwave introduction window 16c made of quartz, while removing the iridium deposited on the window. This cleaning takes, for example, 5 minutes. After step S18 is completed, the next sample is carried in. ^ In one experiment of this embodiment, when processing 5 samples, the integrated position information TUNE1, TUNE2 exceeded the appropriate range. Therefore, the sample of the i-th sheet is subjected to a plasma treatment and then washed. After cleaning, the next sample is processed. At this time, before the cleaning, the integrated position information TUNE1 and TUNE2 fall to the appropriate range. Gases used for cleaning plasma are CF4, C4F8, C5F8, Phrocarbon and other gases, and Sp6 and other fluorine-containing gas, Nf3, & highly reactive fluorine-containing gas. Add gas such as N2, co, Ar, etc. In the above example, since the sample is not mounted on the mouth of the sample stage during cleaning, the sample stage 17 is also cleaned with a plasma. However, if it is necessary to protect the test filial stage 17 from contact with the plasma for cleaning, the steps of inserting / removing the dummy wafer carried in and out of the sample can be inserted before / after step s 18 respectively. In addition, the power of the reflected microwave can also be used as a lean signal reflecting the state of the plasma. At this time, you can set the reflected microwave power measurement in the waveguide 15-22. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ Order --------- Line (Please read the notes on the back before filling this page) 508693 Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed clothing A7 B7 V. Description of the invention (2 (3)) to detect. In a normal state, that is, a state in which a conductive substance is not deposited on the microwave introduction window 16c, 'the upper limit of the reflected microwave power 値 Hj' is set in comparison with the reflected microwave power in the plasma treatment of the sample. And rewrite the processing content in step S 12 of Fig. 15 as "measure the power of reflected microwave

Pr, and perform plasma processing at the same time ", and rewrite the processing content in step S13 to" Pr S H3? ". In addition, the number of processed pieces of the sample may be used as information reflecting the amount of the conductive substance attached to the microwave introduction window 16c. For this reason, each time a certain amount of conductive material is attached to the microwave introduction window 16c, the amount thereof increases as the number of processed pieces increases. Therefore, the number of sample pieces that can be stably processed is set in advance, and the conductive material accumulated on the microwave introduction window 16c can be removed by cleaning each time the number of pieces is processed, that is, stable plasma treatment can be performed. FIG. 16 is a plasma processing flowchart for determining whether to perform cleaning according to the number of processed samples of the sample. First, in step S21, the number of processed pieces c is set to zero. For example, in Fig. 1J, a processing chip counter (not shown) for counting the number of processed chips is set in the mechanism carrying the sample 3, so that the number of processed chips c can be obtained. Continuing, in step S21, the number of processed pieces counter is reset, and the number of pieces processed is set to 0 //, and step S22 is performed for a long time, and the sample is loaded for plasma processing. When the plasma processing is completed, step S23 is performed, and the processing chip counter counts up the processing chip C by one. Continuing in step S24, it is determined whether the number of processed pieces c exceeds the number of pieces D. The number of pieces D is a preset upper limit of the number of pieces that can be stably plasma-treated. ------------------- Order --------- Line (Please read Note 3 on the back before filling out this page)

A7

Continue to "N0" Nichiji in the step, because the department and the system indicate that even if cleaning is not performed, the electrical equipment can be stably processed on the next sample. Therefore, step S25 is performed and the cleaning flag is set. Q. In addition, if the step is "YES", it means that if the cleaning is not performed, the plasma treatment cannot be performed stably on the solid sample. Therefore, step "26, set 1 on the cleaning flag. . = _ Or after execution, both proceed to step S27, and carry out the «treated sample in W. Next, step S28 is performed to determine whether the flag is 10. If the cleaning flag is 0, step S28 is "N0 '. Return to step S22, and perform plasma processing without cleaning. In addition, step S28 In the case that the mang, main, and soil are 4 heat Λ / mesh Qi "1", then step S28 (i.e., step S29) is performed, and cleaning is performed. As a result of the implementation of the first 12: 'in the microwave introduction window 16. Since the conductive material on the substrate is removed, the process returns from step S29 to step 52 and resets the number of processed pieces to count. Two: = Use the total processing time and reflected high-frequency power as indicators: 疋 Whether to perform cleaning indicators. That is, the "treatment, conductivity: attached to the microwave introduction window & can be processed by entering the 丄 1 2 ;! The change of the electropolymerization caused by the change will determine the specific information of the change lt, T whether it meets certain conditions to decide whether to perform cleaning. y can also be set in the instability time after generating plasma. It is better to determine the neutral time such as the above determination, and the determination method. For example, when the setting conditions for the two times are beyond the appropriate range, that is: Measurements, three men and her π washed the temple, and performed a more accurate proofing for cleaning -------------------- Order -------- -Line (please read the precautions on the back before filling this page) -24- This paper ruler of money and wealth (CNS) A4 secret 508693 A7 B7 V. Description of the invention (22) Washing (please read the precautions on the back first) (Fill in this yellow again.) In addition, in this embodiment, the sample 3 is taken out of the processing chamber n during cleaning. Therefore, a plasma generation gas valve that may damage the sample 3 can be introduced. Gas, for example, is a plasma generated gas that may damage the substrate 3 "made of silicon oxide. However, other gases may be used as the plasma generated gas for the π-wash microwave introduction window 16c. That is, the introduction of microwaves to W 16c may not be necessary. Need to be made of quartz, with proper choice of plasma that can etch deposits or microwave introduction windows Me It has the advantage that the degree of material freedom of the microwave introduction window is higher than that of the first to third embodiments. In addition, even if the fluorine-containing gas is used for etching, as in the first to third embodiments, Considering that the microwave introduction window is not completely cleaned, which causes the conductive material to gradually accumulate. To avoid this, the method of this embodiment can also be used in combination. At this time, the plasma treatment can be performed for a longer period of time and more stable. It is also possible to reduce the frequency of the type of cleaning that needs to be opened in the processing chamber. In addition, the above-mentioned embodiments are merely examples, and do not limit the scope of the present invention. The scope of the present invention is as shown in the scope of the patent application, as long as the Any change can be made within the scope of the patent application scope. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

508693 Patent Application No. 090104413 n Chinese Manual Revised Page (September 91, 9 · 10g V. Description of Invention (22a) Element Symbol Description 3 Sample 23 Microwave 4 High Frequency Power Supply 3 la Substrate 5 Microwave Oscillator 31b Silicon Substrate 11 Processing chamber 31c Substrate 12 Gas introduction port 32 Convergence layer 13 Exhaust port 33 Gold layer 14 Magnet 34 Photoresistance layer 15 Waveguide 36 Platinum layer 16 Microwave introduction window 36a Platinum layer 16a Microwave introduction window 36b Platinum layer 16b Top plate 37 SBT layer 16c Microwave introduction window 38 Photoresist layer 17 Sample stage 39 Iridium layer 17a Insulation part 39a Flat layer 17b Electromagnetic part 39b protrusion 17c Sample stage cover 41 Stub type microwave integrator 18a Internal bell-type reaction chamber 41a Stub Line 18b anti-contact plate 41b stub 19a conductor 61 standing wave tester 19b conductor 61a probe 19c conductor 191 through hole 20 plasma generation area 192 through hole 21 gas 22 exhaust -25a- 193 through hole This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

Patent Application No. 090104413 9 彳 · 9 · 10 B8 no Chinese Patent Application Scope Amendment (September 91) 六. Application for Patent Scope 1. A plasma processing method, which can accommodate a conductive layer In the processing chamber of the sample, a microwave is introduced through a microwave introduction mechanism, a gas is introduced from a gas introduction port, and the conductive layer is treated with a plasma; and at least a part of the microwave introduction mechanism that is exposed to the plasma is composed of quartz, and the gas is at least It is a fluorine-containing gas, and the quartz portion is simultaneously etched in the above process. 2. The plasma treatment method according to item 1 of the patent application, wherein the above-mentioned gas does not contain a wide element other than fluorine. 3. —A plasma processing method, which is in a processing chamber that can hold a sample with a conductive layer, introduces microwaves through a microwave introduction mechanism, introduces gas from a gas inlet, and processes the conductive layer with a first plasma; and When the specific information changed by the first plasma treatment satisfies a specific condition, the sample is taken out, and a portion exposed to the plasma of the microwave introduction mechanism is cleaned with a second plasma. 4. For the plasma processing method in item 3 of the scope of patent application, wherein the above specific information is the number of samples processed. 5. The plasma processing method according to item 3 of the patent application scope, wherein the specific information reflects the state of the first plasma. 6. The plasma processing method according to item 5 of the patent application, wherein the microwave is introduced into the processing chamber from a microwave generating source through a microwave integrator; the specific information is integrated position information of the microwave integrator. 7. The plasma processing method according to item 5 of the patent application, wherein the specific information is the reflected power value of the microwave. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 508693 A plasma treatment method, in which the microwave part is composed of quartz, and the electricity introduction mechanism as described in the above item 3 of the patent application is at least exposed to a plasma. The plasma is generated from a fluorine-containing gas. 9. The plasma processing method according to item 1 of the scope of patent application, wherein the conductive layer includes: a metal of the gold, silver, copper, platinum group, indium, gallium, germanium, or phosphorus, or a metal alloy thereof, or a metal oxide . 10. The plasma processing method according to item 1 of the patent application range, wherein the conductive layer includes a metal oxide. 11. A plasma processing device comprising a processing chamber which can hold a sample having a conductive layer, which is the object of a plasma etching process; a gas introduction port, which introduces a fluorine-containing gas into the above A processing chamber; and a microwave introduction mechanism that introduces microwaves that generate the plasma from the gas into the processing chamber, and at least a portion of the plasma exposed to the plasma is composed of quartz. 12. The plasma processing apparatus according to item (1) of the patent application scope, wherein the microwave introduction mechanism has a microwave introduction window made of quartz. 13. The plasma processing apparatus according to item 12 of the application, wherein the microwave introduction window made of quartz is arranged to fill the through hole of the conductor having the through hole. η. The plasma processing device according to item η of the patent application range, wherein the microwave introduction mechanism has a microwave introduction window and an isolation plate, which isolates the microwave introduction window from the plasma, and is at least exposed to the plasma. Made of quartz. -2- This paper is suitable for financial standards S Standard (CNS) Α4 size (⑽ X 297 male A) Binding 508693 A B c D 6. Scope of Patent Application 15. For example, the plasma processing device according to item 14 of the scope of patent application, in which the above-mentioned microwave introduction window is a conductor having a through hole. 16. A plasma processing apparatus, comprising: a sample stage, which is equipped with a sample, the sample has a conductive layer of a plasma etching treatment object, and can apply high frequency power to the sample; The outer cover covers the surroundings of the sample table, does not contact the sample, and at least the part exposed to the plasma is made of quartz; the processing chamber is capable of containing the sample table and the sample table cover y gas The introduction port introduces a fluorine-containing gas into the processing chamber; and the microwave introduction mechanism introduces a microwave that generates the plasma from the gas into the processing chamber. 17. The plasma processing apparatus according to item 16 of the application, wherein the upper end of the cover of the sample table is lower than the position where the sample is mounted on the sample table. 18. · A plasma processing device, comprising: a processing chamber that can hold a sample having a conductive layer, the conductive layer being the object of the plasma etching process; a gas introduction port that introduces gas into the processing chamber; And a microwave introduction mechanism that introduces the microwave of the plasma generated from the gas into the processing chamber; the microwave introduction mechanism includes: a waveguide that conducts microwaves; a microwave introduction window that Microwave penetration between the above processing chambers; and -3- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 508693 AB c D Sixth, the patent application scope reflection amount detection means detects the reflection amount of the microwave; in the processing chamber, when the microwave reflection amount exceeds a specific amount, a plasma is generated to clean the microwave introduction window and expose it to The part under the plasma. 19. A plasma processing device, comprising: a processing chamber that can hold a sample having a conductive layer, the conductive layer being the object of the plasma etching process; a gas introduction port that introduces gas into the processing chamber; and A microwave introduction mechanism is configured to introduce the microwave of the plasma generated from the gas into the processing chamber; the microwave introduction mechanism includes: a waveguide that conducts microwaves; a microwave introduction window having the waveguide and the Microwave penetrability between processing chambers; and a microwave integrator, which controls the position or number of components inserted into the microwave conducting part, and integrates the above-mentioned plasma of the microwave; in the above-mentioned processing chamber, when the microwave integrator is inserted When the position or number of the components of the microwave conducting part exceeds a specific range, a plasma is generated to clean the part of the microwave introduction window exposed under the plasma. -4- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)