KR102101222B1 - 플라스마 처리 장치 및 상태 예측 장치 - Google Patents

플라스마 처리 장치 및 상태 예측 장치 Download PDF

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KR102101222B1
KR102101222B1 KR1020180083771A KR20180083771A KR102101222B1 KR 102101222 B1 KR102101222 B1 KR 102101222B1 KR 1020180083771 A KR1020180083771 A KR 1020180083771A KR 20180083771 A KR20180083771 A KR 20180083771A KR 102101222 B1 KR102101222 B1 KR 102101222B1
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data
plasma
state
processing chamber
physical environment
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KR20190092218A (ko
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요시토 가마지
마사히로 스미야
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주식회사 히타치하이테크
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0259—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
    • G05B23/0283—Predictive maintenance, e.g. involving the monitoring of a system and, based on the monitoring results, taking decisions on the maintenance schedule of the monitored system; Estimating remaining useful life [RUL]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020180083771A 2018-01-30 2018-07-19 플라스마 처리 장치 및 상태 예측 장치 Active KR102101222B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018013338A JP6914211B2 (ja) 2018-01-30 2018-01-30 プラズマ処理装置及び状態予測装置
JPJP-P-2018-013338 2018-01-30

Publications (2)

Publication Number Publication Date
KR20190092218A KR20190092218A (ko) 2019-08-07
KR102101222B1 true KR102101222B1 (ko) 2020-04-17

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KR1020180083771A Active KR102101222B1 (ko) 2018-01-30 2018-07-19 플라스마 처리 장치 및 상태 예측 장치

Country Status (4)

Country Link
US (1) US11107664B2 (https=)
JP (1) JP6914211B2 (https=)
KR (1) KR102101222B1 (https=)
TW (1) TWI684843B (https=)

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WO2020123322A2 (en) 2018-12-10 2020-06-18 Lam Research Corporation Low temperature direct copper-copper bonding
KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
KR102254446B1 (ko) * 2019-06-20 2021-05-24 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN118866641A (zh) 2019-07-31 2024-10-29 朗姆研究公司 具有多个输出端口的射频功率产生器
JP7531111B2 (ja) * 2019-09-30 2024-08-09 パナソニックＩｐマネジメント株式会社 プラズマ処理の異常判定システムおよび異常判定方法
WO2021113387A1 (en) 2019-12-02 2021-06-10 Lam Research Corporation Impedance transformation in radio-frequency-assisted plasma generation
JP2021144832A (ja) * 2020-03-11 2021-09-24 東京エレクトロン株式会社 プラズマ計測装置、及びプラズマ計測方法
US11994542B2 (en) * 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
KR20230021739A (ko) 2020-06-12 2023-02-14 램 리써치 코포레이션 Rf 커플링 구조체들에 의한 플라즈마 형성의 제어
US11784028B2 (en) * 2020-12-24 2023-10-10 Applied Materials, Inc. Performing radio frequency matching control using a model-based digital twin
WO2022168313A1 (ja) * 2021-02-08 2022-08-11 株式会社日立ハイテク プラズマ処理装置
JP7710398B2 (ja) * 2022-03-17 2025-07-18 東京エレクトロン株式会社 予測方法及び情報処理装置
TW202406412A (zh) * 2022-07-15 2024-02-01 日商東京威力科創股份有限公司 電漿處理系統、支援裝置、支援方法及支援程式
JP2024016522A (ja) * 2022-07-26 2024-02-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
JP2025066441A (ja) * 2023-10-11 2025-04-23 東京エレクトロン株式会社 プラズマ処理装置およびシャワーヘッド

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JP2003264175A (ja) * 2002-03-05 2003-09-19 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2004349419A (ja) * 2003-05-21 2004-12-09 Tokyo Electron Ltd プラズマ処理装置の異常原因判定方法及び異常原因判定装置

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US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
TW508693B (en) * 1999-08-31 2002-11-01 Tokyo Electron Limted Plasma treating apparatus and plasma treating method
TW492106B (en) * 2000-06-20 2002-06-21 Hitachi Ltd Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing
WO2002003441A1 (en) 2000-07-04 2002-01-10 Tokyo Electron Limited Operation monitoring method for treatment apparatus
JP4570736B2 (ja) * 2000-07-04 2010-10-27 東京エレクトロン株式会社 運転状態の監視方法
TW529085B (en) * 2000-09-22 2003-04-21 Alps Electric Co Ltd Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system
JP4455887B2 (ja) * 2002-03-28 2010-04-21 東京エレクトロン株式会社 電気的特性を利用して、プラズマ反応炉内の膜の状態を判断するシステムおよび方法
JP2004039952A (ja) * 2002-07-05 2004-02-05 Tokyo Electron Ltd プラズマ処理装置の監視方法およびプラズマ処理装置
WO2004019396A1 (ja) 2002-08-13 2004-03-04 Tokyo Electron Limited プラズマ処理方法及びプラズマ処理装置
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN102156443B (zh) * 2011-03-17 2012-06-27 浙江大学 一种等离子体裂解煤工艺过程的三维可视化数据监控方法
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JP6446334B2 (ja) * 2015-06-12 2018-12-26 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置の制御方法及び記憶媒体

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JP2003264175A (ja) * 2002-03-05 2003-09-19 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2004349419A (ja) * 2003-05-21 2004-12-09 Tokyo Electron Ltd プラズマ処理装置の異常原因判定方法及び異常原因判定装置

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Also Published As

Publication number Publication date
KR20190092218A (ko) 2019-08-07
US11107664B2 (en) 2021-08-31
TW201933016A (zh) 2019-08-16
JP6914211B2 (ja) 2021-08-04
TWI684843B (zh) 2020-02-11
JP2019133785A (ja) 2019-08-08
US20190237309A1 (en) 2019-08-01

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