TWI682559B - 晶圓級封裝模組的製作方法 - Google Patents

晶圓級封裝模組的製作方法 Download PDF

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TWI682559B
TWI682559B TW105105205A TW105105205A TWI682559B TW I682559 B TWI682559 B TW I682559B TW 105105205 A TW105105205 A TW 105105205A TW 105105205 A TW105105205 A TW 105105205A TW I682559 B TWI682559 B TW I682559B
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吳明哲
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乾坤科技股份有限公司
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Abstract

晶圓級封裝模組的製作方法包含提供基底，於基底之第一側設置至少一元件，並在模組封裝完畢後，於基底之第二側設置複數個焊接球。

Description

晶圓級封裝模組的製作方法
本發明係有關於一種模組封裝的製作方法，特別是一種將焊接球設置於基底之一側之晶圓級封裝模組的製作方法。
為提高半導體模組上光電元件的效能，矽光子領域的技術不斷地進步。矽光子學的領域包含在光子系統中利用矽質元件作為光學媒介的研究和應用。矽質元件能夠以次微米等級的精確度設置於矽光子元件當中。矽質元件一般會設置在矽質基底的頂層。
現今，矽光子元件的製程仍存在有成本和精確度的問題。若在焊接球之植球製程(bumping process)之前，先將元件附接於基底，則植球製程中產生的熱能會讓溫度過高，而使原先附接在基底上的元件與基底分離。此外，對於植球製程所使用的機台來說，元件、包護元件之罩蓋以及基底的總厚度也可能過厚，導致製程無法順利進行。若為了使機台能夠容納元件、保護元件之罩蓋以及基底的總厚度而調整機台架構，則將使製程成本大幅提高。若在完成植球製程之後，才將元件附接於基底，則在使元件附接於基底的過程中，也可能導致焊接球脫落或受損，因此如何找到在元件附接的過程中，不會受到影響的焊接球材質也是一大難題。因此，如何找到可行又能符合成本效益的晶圓級封裝模組的製作方法即為現今所需。
本發明之一實施例提供一種晶圓級封裝模組的製作方法，製作方法包含提供基底，於基底之第一側設置至少一元件，以及在模組封裝完畢後，於基底之第二側設置複數個焊接球。
第1圖為本發明一實施例之晶圓級封裝模組的製作方法之各步驟對應之架構示意圖。第2圖為第1圖之晶圓級封裝模組的製作方法的步驟流程圖。其製作方法可包含但不限於以下的步驟：
步驟201：  提供基底101；
步驟202：  於基底101之第一側設置該模組之至少一元件；
步驟203：  於基底101之第二側設置複數個焊接球。
步驟201可提供在晶圓級封裝模組的製作方法中所需的基底101。基底101可為玻璃晶圓或矽晶圓。第3圖為第2圖之晶圓級封裝模組的製作方法中提供基底101的步驟流程圖。第1圖包含執行第2圖之步驟201時，模組的結構變化。晶圓級封裝模組的製作方法可包含但不限於以下的步驟：
步驟301：  蝕刻基底101以產生複數個空的層間導孔(via)，或間層開口(holes)，102；
步驟302：  利用導電材料103填滿每一層間導孔102；
步驟303：  於基底101之第二側形成線路佈局104；
步驟304：  將載體106與基底101之第二側接合；
步驟305：  研磨基底101之第一側以減少基底101的厚度；及
步驟306：  於基底101之第一側形成線路佈局107。
本發明之晶圓級封裝模組的製作方法並不限於具備前述的所有步驟。在部分實施例中，步驟201未必包含第3圖中的所有步驟。在本發明的部分實施例中，至少對應於層間導孔102的步驟303及306可以省略。
步驟301中，可對基底101蝕刻以產生複數個層間導孔102。在蝕刻過程中形成空的層間導孔102可為高度約為100μm至300μm的通孔結構(hollow structure)或埋孔結構(buried hole)。在部分實施例中，蝕刻的過程可使用乾式蝕刻或準分子雷射。每一個空的層間導孔102的孔徑可根據所使用的製程科技或所設置之元件(例如光電元件或光子元件)的需求來設計。舉例來說，空的層間導孔102的孔徑可大於或等於10μm。
在步驟302中，導電材料103可將每一個層間導孔102填滿以形成具有實心結構的埋孔。導電材料103可為金屬，例如為銅或鋁。導電材料103可用來形成基底101之第二側之線路佈局104與基底101之第一側之線路佈局107之間的中介層，而這些中介層則可用來耦接形成於基底101之第一側之線路佈局107上的焊墊以及形成於基底101之第二側之線路佈局104上對應的焊墊(如第1圖所示)。
在本發明的其他實施例中，基底101可僅具有垂直的層間導孔，而與元件相耦接的焊墊則可以直接設置於垂直的層間導孔的上方。此時，可以不形成線路佈局104及107。
在步驟303中，線路佈局104可形成於基底101之第二側。線路佈局104可包含複數個焊墊、複數條走線、重新佈線層(redistribution layer)及/或凸塊(焊接球)底部金屬化層(under bump metallization，UBM)。重新佈線層可為模組基底之第一側或第二側上額外的一層線路，並使基底101上之元件所需的訊號線路可根據模組的需要重新佈線。因此，模組與模組間的接合可以更加簡化。重新佈線層可為銅層或鋁層。凸塊(焊接球)底部金屬化層可形成在重新佈線層上方，並可作為擴散阻障且有利於沾錫。
在其他實施例中，當層間導孔的孔徑具有足夠的面積以作為光電元件的焊墊時，在第一側的層間導孔102可用來與元件的導線或端點接合，而在第二側的層間導孔102則可用來設置焊接球。在此情況下，步驟303及306即可省略。
在步驟304中，載體106可與基底101之第二側相接合。載體106可為玻璃晶圓或矽晶圓。較佳的載體106會具有與矽晶源相符的熱膨脹係數。載體106與基底101之第二側之間可利用接合物質105來接合。接合物質105可為聚合物、環氧樹脂材料或光阻材料。將載體106與基底101相接合時，可在載體106及基底101之間塗上接合物質105。接合物質105可在受熱或接受紫外光照射後，被軟化而降低或消除黏性。
在步驟305中，基底101的第一側可被研磨或蝕刻以減少基底101的厚度。基底101的第一側可被研磨使其接觸到層間導孔102或導電材料103的表面，將原先的埋孔變為通孔。基底101的厚度可能由原先的約700μm被減少至約100μm至300μm。
在步驟306中，線路佈局107可形成於基底101的第一側。線路佈局107可用以形成導電路徑(走線)、焊墊及其他使元件108得以耦接至基底101的結構。導電路徑可利用導電材質，例如銅或鋁，來形成。
在步驟202中，模組可包含光電元件或光子元件(photonic element)，亦即可將至少一光電元件或光子元件，例如矽光子元件，設置於基底101的第一側。光電元件或光子元件，例如矽光子元件，能夠處理光學訊號。處理光學訊號的過程可能包含將電子訊號轉換為光學訊號以及對光學訊號進行調變、聚光、分光、導光、平行化、濾波及光耦合…等運作。用來發射光學訊號的元件可包含雷射二極體及發光二極體。這類型的元件可能是由表面發光或側邊發光。光感測器，例如感光二極體，則能夠感測光學訊號。感光二極體可例如為PN二極體、PIN二極體或累崩型光二極體(avalanche photo diode)。另外，也可使用金屬-半導體-金屬光偵測器(Metal-Semiconductor-Metal photo-detector， MSM photo-detector)或光導體(photoconductor)來感測光學訊號。光學訊號的調變、聚光、分光、導光、平行、濾波及光耦合…等運作則可利用光電積體電路、聚光透鏡、光學分光器、光波導元件、光學隔離器…等來完成。此外，可利用焊接技術將前述的光電元件設置於基底101。在晶圓級(wafer level)封裝製程中，複數個模組的複數個元件可設置於同一塊基底101。模組可包含環圈109、罩蓋110及電路。模組中的電路可為由元件108、主動元件及/或被動電子元件組合而成的覆晶 (flip chip)、裸晶(bare die)、球柵陣列(ball grid array，BGA)積體電路或雷射二極體…等。第4圖為第2圖之晶圓級封裝模組的製作方法中於基底之第一側設置模組的步驟流程圖。第1圖包含執行第2圖之步驟202時，模組的結構變化。其製作方法可包含但不限於以下的步驟：
步驟401：  將元件108(包含至少一光電元件或光子元件)附接於基底101之第一側；
步驟402：  將環圈109附接於基底101之第一側；
步驟403：  將罩蓋110附接於基底101之第一側；
步驟404：  移除接合於基底之第二側之載體106；及
步驟405：  將模組與基底101上的其他模組分離。
步驟405可以包含在步驟202當中，但也可輕易地改在步驟203之後再執行。於步驟202中包含步驟405的做法僅為例舉性質的實施例，而並非限定在步驟202中必須執行步驟405。
在步驟401中，元件108可附接於基底101的第一側。所述元件108可為矽光子封裝模組或平台中的電子元件，例如可包含但不限於電子積體電路(晶片)、光電積體電路、雷射二極體及雷射二極體透鏡。當矽光子封裝模組或平台中的電子元件附接於基底101時，可優先設置及附接電子積體電路、光電積體電路、雷射二極體，接著再設置雷射二極體透鏡，以確保雷射二極體透鏡能夠精準對齊。元件108可包含接腳焊墊，用以將元件108電性耦接至基底101之第一側之線路佈局107的焊墊107a。元件108與基底101之第一側之線路佈局107的焊墊107a之間的電性耦接可透過焊接或接合導線(金屬線的電性接合)來完成。用以耦接元件108及線路佈局107的焊接材料可為導電合金材料，例如錫金(SnAu)合金、錫銀(SnAg)合金及錫銀銅(SnAgCu)合金等等。導電合金材料的熔點可介於280°C及340°C之間。導線接合的方式則可利用接合導線114來將元件108的接腳焊墊電性耦接至線路佈局107的焊墊，接合導線114可由導電材料製成，例如銅、金及銀。
在步驟402中，環圈109可附接於基底101的第一側。環圈109可為半透明或光學媒介的材料，例如以玻璃或矽製程的材料。光線能夠穿透環圈109，使得在基底101上，環圈109內的光學元件能夠接收或發射光學訊號。環圈109可以圍繞於模組之至少一元件108或全部電路(或全部元件)的方式設置。環圈109的大小及形狀可根據模組之電路的大小或所需保護之元件108的大小來製造。舉例來說，當環圈109用來保護元件108，例如為雷射二極體時，環圈109所圍繞的面積即會大於雷射二極體的面積。在部分其他實施例中，環圈109的形狀也可能不固定。環圈109的形狀可以配合基底101上的模組中各元件108的擺設來設計。甚至在部分實施例中，環圈109可用以保護模組中對濕度較為敏感的單一個元件，例如雷射二極體，並同時保護模組中的全部電路(或元件)。第5圖為本發明一實施例之第1圖之晶圓級封裝模組的俯視圖。環圈109可利用局部加熱的方式附接。環圈109亦可利用接合材料112來附接於基底101上，接合材料112可例如為導電合金材料(例如錫金(SnAu)合金、錫銀(SnAg)合金及錫銀銅(SnAgCu)合金等等)。接合物質105的熔點範圍會低於接合材料112的熔點範圍。在此實施例中，導電合金材料的熔點範圍可介於280°C及340°C之間。由於只有局部被加熱，因此用以附接載體106的接合物質105(例如為聚合物)不會融化。接合材料112並不限於導電合金材料，導電合金材料僅是將環圈109附接於基底101的一種例示性材料。
在步驟403中，罩蓋110可附接於基底101之第一側及環圈109的上方。罩蓋110可經由環圈109附接於基底101之第一側。有許多製作方法都能夠將罩蓋110附接於環圈109。附接物113為罩蓋110及環圈109之間的中介層，其需以氣密封的方式接合兩者以避免外部環境干擾或破壞模組的運作。罩蓋110可利用直接接合的方式附接於環圈109，例如對環圈109或罩蓋110局部加熱接合。再使用直接接合的方式時，接合的過程無須額外的中介層。陽極接合(Anodic bonding)也可用來將罩蓋110附接於環圈109。陽極接合是用以將玻璃與金屬材料相接合，或將玻璃與矽材料相接合的晶圓接合過程，且無需使用額外的中介層。因此當環圈109及罩蓋110皆為矽材質時，陽極接合即可進行矽材質對矽材質的接合。共晶接合(Eutectic bonding)也可用來將罩蓋110附接至環圈109。共晶接合是利用共晶金屬層來接合罩蓋110及環圈109。共晶金屬是在特定金屬成分組合條件及溫度下，形成穩定的金屬化合物。共晶金屬(導電合金金屬)可例如為錫金(SnAu)、銅錫(CuSn)金矽(AuSi)、鋁矽(AlSi)、及錫銀銅(SnAgCu)合金等等。黏性接合亦可用於將罩蓋110附接於環圈109。黏性接合會使用中介層來黏接罩蓋110及環圈109。中介層可例如為SU-8聚合物及苯並環丁烯(benzocyclobutene，BCB)等材質。玻璃介質(Glass frit)接合亦可用於將罩蓋110附接於環圈109。玻璃膠接合會使用中介玻璃層來進行接合。低黏性的特質使得中介玻璃層能夠適用於粗糙或不規則的表面，並確保罩蓋110及環圈109之間能夠氣密封合。再者，罩蓋110亦可利用導電金屬來附接於環圈109。用來附接罩蓋110及環圈109的導電金屬可例如為金或銀。罩蓋110可用來保護元件避免受到外在環境的影響，例如保護雷射二極體射避免到外在濕度的影響。舉例來說，罩蓋110可如第5圖所示，用來保護元件108，例如雷射二極體，及元件108之接合導線114。罩蓋110可由玻璃或矽製成。環圈109及罩蓋110的整體高度約在800μm及1000μm之間。此外，罩蓋110的外層還可塗布一層抗反射層。對於矽光子元件而言，抗反射層可以避免雷射二極體發出之訊號的能量散失。將罩蓋110附接的過程可在低壓且高氮的環境下完成。
再者，本發明的部分實施例中，環圈109及罩蓋110可以製造成一體。舉例來說，可將罩蓋110蝕刻出凹陷部，而凹陷部具有足夠的深度能夠容納至少一元件108或整個模組的電路。在此情況下，及無需另將罩蓋110附接至環圈109。如此一來，氣密封合以保護模組的效果即可大大地提升。步驟402及403可相結合以將環圈109及罩蓋110同時附接至基底101的第一側。
在步驟404中，可移除接合於基底101之第二側的載體106。載體106可利用雷射、紫外光(去除或降低接合物質105的黏性)、加熱或以機械方法來移除。並可具有清潔基底101的第二側之步驟，以利於晶圓級封裝模組製程之下一步驟的進行。
在步驟405中，可將基底101上的每一個模組彼此分離。此步驟亦可在第2圖之步驟203完成後再進行。在半導體的製程中，單一晶圓，在此實施例中基底101可以是整片的晶圓，可包含複數個模組。在基底101上的所有模組都建立完成後，可透過晶圓切割來將各個模組(封裝模組)彼此分離。單一晶圓上所能承載的模組數量會與一片晶圓的大小、建立模組及其環圈所需的面積有關。
在基底101上設置焊接球111之前，模組的厚度可能大於或等於800μm。現今技術中，沒有在厚度約1000μm的模組上進行植球製程的製作方法及機具。為能克服上述的問題，在步驟203中，焊接球111可以設置在基底101的第二側。第1圖包含執行第2圖之步驟203時，模組的結構變化。
在基底101之第二側設置焊接球的製作方法可稱為植球(ball placement)。植球可利用局部加熱的方式將每一個焊接球附接至基底101。植球的過程還可利用雷射或紫外光使焊接球111在原地硬化。本發明並不限於一次將所有的焊接球全部設置到基底的第二側，即一次完成全部焊接球111的植球。亦可由多次方式來完成所有焊接球111的放置，一次可以將一個或複數個焊接球對齊至基底之第二側上對應的座標，並局部加熱，達成部分植球的作業。此外，亦可在座標上設置光罩來將複數個焊接球附接於基底。
在植球過程中，一個焊接球111可能會被設置於基底101的一個特定座標上。在部分實施例中，焊接球111可能會被設置在基底101之凸塊(焊接球)底部金屬化層(UBM)上方。在焊接球與基底101的特定座標對齊後，可在特定座標上進行局部加熱。接著，焊接球111即可附接上基底101。前述的過程可以不斷重複，直到將所有的焊接球111都附接至基底101的凸塊(焊接球)底部金屬化層(UBM)。
根據焊接球的大小和規格，植球過程可利用網版印刷(screen printing)的方式產生焊接球。執行網版印刷時，需施加壓力至模組端。當將第1圖所示之第二至最後等過程中的模組結構翻面以使基底101之第二側面向上時，模組即會由環圈109所支撐。
在此實施例中，由於植球過程會利用局部加熱來設置每一個焊接球，因此模組接收到的壓力會比較小。如此一來，焊接球搖晃的現象會實質上地減少，且焊接球111與基底101之對應座標間也能夠更精準地對齊。焊接球111可由導電合金形成，例如錫銀(SnAg)合金、錫銀銅(SnAgCu)合金、銀或錫。焊接球的設置可在包含複數個模組的整塊晶圓上執行，亦可在將各個模組與整塊晶圓分離後，於各個模組上進行。焊接球111的大小(例如面積及高度)可根據製程科技之凸塊(焊接球)底部金屬化層(UBM)的大小做適當的選擇。在部分實施例中，焊接球111自基底101凸出的高度可大於或等於50μm。
第6圖為本發明一實施例之晶圓基底上之複數個模組的示意圖。如第6圖所示，單一晶圓基底上建立了複數個模組601。複數個模組可彼此相同。晶圓基底可為第1圖的基底101。基底101可為矽晶圓或玻璃晶圓。晶圓基底的直徑從25.4mm(1英吋)至300mm(11.8英吋)都有。當晶圓基底的直徑越大時，同一晶圓基底上所能製造之模組601的數量也會隨著增加。為能降低每個模組的製造成本，可將單一晶圓基底上所能製造之模組的數量最大化。由於晶圓切割的限制，模組的形狀可以是正方形或長方形。晶圓切割是將複數個模組601彼此分離的程序。在提供包含模組中電路所需之焊墊及導電路徑的基底101後，可利用焊接方法或導線接合的方法，將模組中建立電路所需的元件設置於基底101。在複數個模組601的電路形成完畢後，可形成每一個模組601的環圈109。接著將罩蓋110設置於複數個環圈109上。罩蓋110可為單一晶圓，例如與基底101相同的單一晶圓。罩蓋110與基底101可具有相同的大小。罩蓋110、環圈109及基底101可使用相同的材料或相異的材料製成。形成罩蓋110、環圈109及基底101的材料可為矽或玻璃。
上述模組的晶圓級封裝並不限於適用在矽光子模組。模組的晶圓級封裝也可用在無線模組、系統邏輯模組及感測模組…等等。用以形成前述導電路徑、重新佈線層、凸塊(焊接球)底部金屬化層及填滿層間導孔之金屬的導電材料不限於銅或鋁。其他熔點高於焊接球的導電材料也可用於前述的導電路徑、重新佈線層、凸塊(焊接球)底部金屬化層及填滿層間導孔之金屬。由於本發明提供之晶圓級封裝模組的製作方法所需的機械裝置都已成熟，因此使用晶圓級封裝模組的製作方法來製造矽光子元件模組的成本即可大大地降低。   以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
101‧‧‧基底 102‧‧‧層間導孔 103‧‧‧導電材料 104、107‧‧‧線路佈局 105‧‧‧接合物質 106‧‧‧載體 107a‧‧‧焊墊 108‧‧‧元件 109‧‧‧環圈 110‧‧‧罩蓋 111‧‧‧焊接球 112‧‧‧接合材料 113‧‧‧附接物 114‧‧‧導線 UBM‧‧‧凸塊(焊接球)底部金屬化層 201至203、301至306、401至405‧‧‧步驟 601‧‧‧模組
第1圖為本發明一實施例之晶圓級封裝模組的製作方法之各步驟對應之架構示意圖。 第2圖為第1圖之晶圓級封裝模組的製作方法的步驟流程圖。 第3圖為第2圖之晶圓級封裝模組的製作方法中提供基底的步驟流程圖。 第4圖為第2圖之晶圓級封裝模組的製作方法中於基底之第一側設置模組的步驟流程圖。 第5圖為本發明一實施例之第1圖之晶元級封裝模組的俯視圖。 第6圖為本發明一實施例之晶圓基底上之複數個模組的示意圖。
201至203‧‧‧製作步驟

Claims (20)

  1. 一種晶圓級封裝模組的製作方法，包含：提供一基底；於該基底之一第二側形成一線路佈局；當於該基底之該第二側形成該線路佈局後，將一載體與該基底之該第二側接合；當該載體與該基底之該第二側接合後，於該基底之一第一側設置該模組之至少一元件；當於該基底之該第一側設置該模組之該至少一元件後，將一環圈及一罩蓋附接於該基底之該第一側；當將該環圈及該罩蓋附接於該基底之該第一側後，移除接合於該基底之該第二側之該載體；及當移除接合於該基底之該第二側之該載體後，於該基底之該第二側之該線路佈局上設置複數個焊接球。
  2. 如請求項1所述的製作方法，其中該基底係為一玻璃晶圓或一矽晶圓。
  3. 如請求項1所述的製作方法，其中提供該基底之步驟包含：蝕刻該基底以產生複數個空的層間導孔；利用導電材料填滿每一層間導孔；及研磨該基底之該第一側以減少該基底的厚度。
  4. 如請求項3所述的製作方法，其中該載體係為一玻璃晶圓或一矽晶圓。
  5. 如請求項1所述的製作方法，其中形成於該基底之該第二側之該線路佈局包含複數個焊墊、一重新佈線層(redistribution layer)及/或一凸塊(焊接球)底部金屬化層(under bump metallization，UBM)。
  6. 如請求項3所述的製作方法，其中提供該基底之步驟另包含於該基底之該第一側形成一線路佈局。
  7. 如請求項1所述的製作方法，其中該載體與該基底之該第二側係利用一聚合物接合。
  8. 如請求項1所述的製作方法，其中將該環圈及該罩蓋附接於該基底之該第一側的步驟包含：將該環圈附接於該基底之該第一側；及將該罩蓋附接於該基底之該第一側。
  9. 如請求項8所述的製作方法，其中將該罩蓋附接於該基底之該第一側的步驟係利用直接接合、陽極接合(anodic bonding)、共晶接合(eutectic bonding)、膠合(adhesive bonding)或玻璃介質接合(glass frit bonding)的方式將該罩蓋附接於該基底之該第一側。
  10. 如請求項8所述的製作方法，其中將該環圈附接於該基底之該第一側 的步驟係將該環圈以圍繞於該模組之至少一元件的方式附接於該基底之該第一側。
  11. 如請求項8所述的製作方法，其中將該環圈附接於該基底之該第一側的步驟係將該環圈以圍繞於該模組之至少一雷射二極體之方式附接於該基底之該第一側。
  12. 如請求項1所述的製作方法，其中接合於該基底之該第二側之該載體係利用加熱、機械方法、雷射或紫外光來移除。
  13. 如請求項1所述的製作方法，其中該罩蓋係為一玻璃罩蓋或一矽質罩蓋。
  14. 如請求項1所述的製作方法，其中將該罩蓋具有複數個凹陷部，且每一凹陷部具有足以容納該模組之至少一元件的一空間。
  15. 如請求項1所述的製作方法，另包含：將該模組與該基底上的其他模組分離。
  16. 如請求項1所述的製作方法，其中當移除接合於該基底之該第二側之該載體後，於該基底之該第二側設置該些焊接球的步驟係利用局部加熱將該些焊接球附接於該基底之該第二側。
  17. 如請求項1所述的製作方法，其中於該基底之該第二側設置該些焊接 球的步驟包含：使至少一焊接球分別對齊該基底之該第二側之至少一座標；及對該基底之該第二側的該至少一座標局部加熱以將該至少一焊接球附接至該基底之該第二側上。
  18. 如請求項1所述的製作方法，其中該模組包含至少一光電元件或一光子元件。
  19. 如請求項1所述的製作方法，其中該環圈包含一半透明材質或一光學媒介材料，以使光線能夠穿透該環圈，並使得在該基底上，於該環圈內的至少一光學元件能夠接收或發射光學訊號。
  20. 如請求項1所述的製作方法，其中：該至少一元件包含一雷射二極體；及當於該基底之該第一側設置該模組之該至少一元件後，將該環圈及該罩蓋附接於該基底之該第一側包含將該環圈圍繞該雷射二極體以避免該雷射二極體受到外在濕度的影響。
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