TWI682506B - 封裝結構及其製造方法 - Google Patents

封裝結構及其製造方法 Download PDF

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TWI682506B
TWI682506B TW108100930A TW108100930A TWI682506B TW I682506 B TWI682506 B TW I682506B TW 108100930 A TW108100930 A TW 108100930A TW 108100930 A TW108100930 A TW 108100930A TW I682506 B TWI682506 B TW I682506B
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Taiwan
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semiconductor die
circuit layer
redistribution circuit
layer
package
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TW108100930A
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TW202002189A (zh
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張簡上煜
徐宏欣
林南君
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力成科技股份有限公司
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Abstract

本發明提供一種包括第一封裝體及第二封裝體的封裝結構。第一封裝體包括半導體晶粒、絕緣密封體、第一重佈線路層、第二重佈線路層以及多個導線線段。半導體晶粒具有主動面與背面。絕緣密封體包覆半導體晶粒。第一重佈線路層配置於半導體晶粒的背面與絕緣密封體的底面上。第一重佈線路層具有第一表面與相對於第一表面的第二表面。第二重佈線路層配置於半導體晶粒的主動面上。多個導線線段電性連接半導體晶粒至第二重佈線路層，且電性連接第一重佈線路層至第二重佈線路層。第二封裝體堆疊於第一封裝體上方的第一重佈線路層的第二表面上。

Description

封裝結構及其製造方法
本發明是有關於一種封裝結構及其製造方法，且特別是有關於一種封裝層疊（package-on-package；PoP）結構及其製造方法。
市場上非常需要比上一代同類產品更輕，更纖薄，更短，更小的電子產品。因此，進行廣泛的研究以尋找有助於減少現有設備的體積與重量的半導體封裝的新技術，例如藉由增加組件的集成。3D堆疊技術（例如：封裝層疊）已經被開發以滿足更高封裝密度的需求。
本發明提供一種採用打線接合提供垂直連接的封裝結構。
本發明提供一種具有較低的製造成本的封裝結構。
本發明提供一種包括第一封裝體及第二封裝體的封裝結構。第一封裝體包括半導體晶粒、絕緣密封體、第一重佈線路層、第二重佈線路層以及多個導線線段。半導體晶粒具有主動面與背面。絕緣密封體包覆半導體晶粒。第一重佈線路層位於半導體晶粒的背面與絕緣密封體的底面上。第一重佈線路層具有第一表面與相對於第一表面的第二表面。第二重佈線路層位於半導體晶粒的主動面上。導線線段將半導體晶粒電性連接至第二重佈線路層，且導線線段將第一重佈線路層電性連接至第二重佈線路層。第二封裝體堆疊於第一封裝體上的第一重佈線路層的第二表面上。
在本發明的一實施例中，其中多個導線線段包括多個第一線段與多個第二線段；多個第一線段具有實質上垂直的輪廓且將半導體晶粒電性連接至第二重佈線路層；多個第二線段具有實質上垂直的輪廓且將第一重佈線路層電性連接至第二重佈線路層；多個第二線段比多個第一線段長；且多個第二線段的高度介於50微米至250微米之間。
本發明提供一種封裝結構的製造方法。本製造方法至少包括以下步驟。提供載板。形成第一封裝體於載板上。形成第一封裝體的步驟至少包括以下步驟。形成第一重佈線路層於載板上，其中第一重佈線路層具有第一表面與相對於第一表面的第二表面。接合半導體晶粒於第一重佈線路層的第一表面上。藉由多條導線以將半導體晶粒電性連接至第一重佈線路層。形成絕緣材料以包覆半導體晶粒與多個導線。進行薄化製程，以減少絕緣材料的厚度直到移除每一個導線的一部分以形成多個導線線段，而形成絕緣密封體。在進行薄化製程之後，半導體晶粒與第一重佈線路層電性絕緣。形成第二重佈線路層於絕緣密封體的頂面上與半導體晶粒上。多個導線線段將第二重佈線路層電性連接至半導體晶粒，且多個導線線段將第二重佈線路層電性連接至第一重佈線路層。
在本發明的一實施例中，其中移除每一多個導線的一部分所形成的多個導線線段包括多個第一線段與多個第二線段；多個第一線段具有實質上垂直的輪廓且將半導體晶粒電性連接至第二重佈線路層；多個第二線段具有實質上垂直的輪廓且將第一重佈線路層電性連接至第二重佈線路層；且多個第二線段比多個第一線段長。
在本發明的一實施例中，其中多個導線在進行薄化製程之前的高度介於150微米至400微米之間，且多個第二線段在進行薄化製程之後的高度介於50微米與250微米之間。
在本發明的一實施例中，其中在進行薄化製程之後，每一多個第一線段及多個第二線段的端部與絕緣密封體的頂面共平面。
在本發明的一實施例中，封裝結構的製造方法更包括：形成堆疊於第一重佈線路層的第二表面上及第一封裝體上方的第二封裝體。其中形成第二封裝體讀步驟包括：提供第二半導體晶粒於第一重佈線路層的第二表面上及第一封裝體上方；以及形成包覆第二半導體晶粒的第二絕緣密封體。
在本發明的一實施例中，其中第二半導體晶粒藉由覆晶接合或藉由打線接合而電性連接至第一重佈線路層。
在本發明的一實施例中，封裝結構的製造方法更包括：形成填入第二半導體晶粒與第一重佈線路層之間的空隙的底膠。
在本發明的一實施例中，其中每一多個導線包括：第一凸塊，接合至半導體晶粒；第二凸塊，接合至第一重佈線路層；第一線段，電性連接至第一凸塊；第二線段，電性連接至第二凸塊；以及犧牲線段，連接第一線段至第二線段，其中薄化製程移除犧牲線段以斷開第一線段與第二線段之間的連接而形成多個導線線段。
在本發明的一實施例中，封裝結構的製造方法更包括：於第二重佈線路層上形成多個導電端子，其中多個導電端子電性連接至第二重佈線路層。
基於上述，本發明的封裝結構形成有多個導線線段，其中導線線段將半導體晶粒電性連接至第二重佈線路層，且將第一重佈線路層電性連接至第二重佈線路層。因此，導線線段（藉由打線接合形成）可以用於取代在傳統封裝結構中，用以提供重佈線路層與半導體晶粒之間的垂直連接的銅柱、銅凸塊或絕緣穿孔（through insulator vias；TIV）。整體而言，藉此可以實現封裝結構的製造過程之簡單化，進而降低製造成本。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1A至圖1O是依據本發明一實施例的製造封裝結構的方法中各個階段的剖面示意圖。請參照圖1A，提供第一載板102。在一實施例中，第一載板102可以由矽、聚合物或其他適宜的材料所構成。在一些其他的實施例中，第一載板102可以是玻璃基板或玻璃支撐板。其他合適的基板材料也可以作為第一載板102，只要所述材料能夠承載在其之上所形成的封裝結構且能夠承受後續的製程即可。
第一離型層104可以形成於第一載板102上，以提升第一載板102以及隨後形成於其上的結構之間的黏著，以及改善在製造過程中整個封裝結構的剛性。第一離型層104可以為光熱轉換（light to heat conversion；LTHC）黏著層，但本發明不限於此。可以視需求而選擇其他適宜的材料。
請參照圖1B，第一重佈線路層106可以形成於第一載板102上與第一離型層104上。第一重佈線路層106可以包括交替形成的多個介電層106a以及多個導電元件106b。多個介電層106a可以由氧化矽、氮化矽、碳化矽、氮氧化矽、聚酰亞胺、苯並環丁烯等的非有機或有機介電材料所製成，但本發明不限於此。多個導電元件106b可以由銅、鋁、鎳或其他適宜的導電材料所製成，但本發明不限於此。在一些實施例中，第一重佈線路層106可以藉由以下步驟形成。舉例來說，在所示實施例中，可以藉由濺鍍（sputtering）、蒸鍍（evaporation）或電鍍（electroplating）將導電材料（未繪示）沉積在第一載板102上。藉由微影製程（lithography）與蝕刻（etching）對導電材料進行圖案化，而可以在第一載板102上形成第一組導電元件106b。隨後，藉由一系列的沉積（deposition）、微影製程與蝕刻，而可以在導電元件106b上形成第一介電層106a。然後可以重複上述的步驟，以形成所需數量的介電層106a與導電元件106b。在一些替代的實施例中，可以根據設計需求反轉導電元件106b和介電層106a的形成順序。
此外，如圖1B所示，第一重佈線路層106具有第一表面S1以及相對於第一表面S1的第二表面S2。在示例性的實施例中，多個開口OP1位於第一重佈線路層106的第一表面S1上，且第一重佈線路層106的第二表面S2與第一離型層104接觸。多個開口OP1可以暴露部份的導電元件106b，以進一步電性連接至封裝體中的其他組件。
請參照圖1C，在形成第一重佈線路層106之後，在第一重佈線路層106的第一表面S1上配置半導體晶粒108。舉例來說，半導體晶粒108可以藉由黏著層107貼附至第一重佈線路層106。黏著層107可以是晶粒黏著膜（die attach film；DAF）或由黏著材料形成，黏著材料包括環氧樹脂（epoxy resins）、無機材料、有機聚合物材料等，但本發明不限於此。
半導體晶粒108可以是特殊應用積體電路（Application-Specific Integrated Circuit；ASIC）。在一些實施例中，半導體晶粒108可以用於執行邏輯應用程序。在本發明中，並不對半導體晶粒108的性質或類型加以限制。其他適宜的半導體裝置也可以作為半導體晶粒108。半導體晶粒108可以包括半導體基板108a、多個接觸墊108b、保護層（passivation layer）108c以及選擇性地包括後護層（post-passivation layer）108d。多個接觸墊108b配置於半導體基板108a上。保護層108c配置在半導體基板108a上，且保護層108c具有部分地暴露半導體基板108a上的接觸墊108b的開口。後保護層108d覆蓋保護層108c且具有暴露出至少部分接觸墊108b的多個開口OP2。如圖1C所示，半導體晶粒108可以具有主動面AS1以及相對於主動面AS1的背面BS1。多個接觸墊108b位於半導體基板108a的主動面AS1上，而半導體基板108a的背面BS1與黏著層107接觸。換句話說，半導體晶粒108可以是以面朝上（face-up）的方式配置在第一重佈線路層106上。
請參照圖1D，半導體晶粒108可以藉由多條導線110電性連接至第一重佈線路層106。多條導線110可以藉由打線接合形成。第一凸塊T1與第二凸塊T2形成在導線110的對應的端子處。第一凸塊T1耦接至半導體晶粒108。第二凸塊T2耦接至第一重佈線路層106。第一凸塊T1與第二凸塊T2藉由導線110彼此電性連接。第一凸塊T1可以配置在半導體晶粒108的接觸墊108b上。第二凸塊T2可以配置在第一重佈線路層106的暴露的導電元件106b上。第一凸塊T1可以對應地配置在半導體晶粒108的主動面AS1上的開口OP2中。第二凸塊T2可以對應地配置在第一重佈線路層106的開口OP1中。
在一些實施例中，每一條導線110可以包括第一線段W1、犧牲線段SA以及第二線段W2。每一條導線110的第一線段W1可以電性連接至對應的第一凸塊T1。每一條導線110的第二線段W2可以電性連接至對應的第二凸塊T2。此外，每一條導線110的犧牲線段SA可以將第一線段W1接通或連接至第二線段W2。換句話說，每一條導線110可以依序包括第一凸塊T1、第一線段W1、犧牲線段SA、第二線段W2及第二凸塊T2。
在示例性的實施例中，導線110可以經由打線機（wire bonder）（未繪示）形成。依據設計上的需求，打線機可以是楔型接合（wedge bond）、球形接合（ball bond）或其他適宜的打線機。在一些實施例中，打線機可以包括焊接導線110的自動化裝置。舉例來說，每一條導線110可以藉由例如瓷嘴（capillary）（未繪示）的接合工具饋送，接合工具施加熱、超音波能量、壓力或上述之組合，以將第一重佈線路層106與半導體晶粒108之間的每一條導線110接合。在一些實施例中，可以依據設計上的需求，經由球形接合、楔型接合或其他適宜的接合方式，以形成每一條導線110的第一凸塊T1與第二凸塊T2。將第一凸塊T1接合至半導體晶粒108的主動面AS1之後，耦接至第一凸塊T1的第一線段W1可以透過打線機的接合工具而被遞送出（deliver out）。舉例來說，打線機的接合工具可以從半導體晶粒108以垂直的方式向上移動，以形成第一線段W1。
接著，接合工具可以在向上遠離半導體晶粒108且朝向第一重佈線路層106的方向上移動，以形成犧牲線段SA。每一條導線110的犧牲線段SA中的弧形（arcing shape）可以被形成。之後，打線機的接合工具可以定位在第一重佈線路層106的暴露的導電元件106b上，且可以形成每條導線110的第二線段W2中的尾部接合（tail bond），以接合第一重佈線路層106。因此，第一重佈線路層106和半導體晶粒108上的打線接合製程完成。
在一些實施例中，在打線接合製程後，每條導線110的高度H1可以介於150微米（micrometer；μm）與400微米之間。高度H1可以相當於犧牲線段SA的弧形的頂端（peak）與耦合到第一重佈線路層106的第二線段W2的底端之間的距離。在一些實施例中，導線110的第一線段W1與第二線段W2可以呈現實質上垂直的輪廓，而連接第一線段W1與第二線段W2的犧牲線段SA呈現弧形輪廓。
請參照圖1E，絕緣材料112可以形成於第一重佈線路層106上，以包覆半導體晶粒108與多條導線110。也就是說，第一重佈線路層106可以與絕緣材料112的底面112B接觸。在一些實施例中，絕緣材料112也可以包覆黏著層107的側邊。在一些實施例中，絕緣材料112更包覆第一凸塊T1及第二凸塊T2。在一些其他實施例中，絕緣材料112部分包覆第二凸塊T2。此外，絕緣材料112的厚度H2可以大於每條導線110的高度H1。也就是說，導線110不會露出，且被絕緣材料112良好地保護著。在一些實施例中，絕緣材料112例如是藉由壓縮模塑製程（compression molding process）所形成，以將半導體晶粒108與多條導線110之間的間隙填滿。在一些實施例中，絕緣材料112包括環氧樹脂（epoxy resins）或其他適宜的樹脂，但本發明不限於此。
請參照圖1F，可以減少絕緣材料112的厚度H2直到至少每條導線110的部分被移除。舉例來說，可以減少絕緣材料112的厚度H2（如圖1E所示）直到導線110的犧牲線段SA被移除。也就是說，薄化製程（thinning process）移除犧牲線段SA以斷開第一線段W1與第二線段W2之間的連接，藉此形成多個導線線段110’以及減薄的絕緣密封體112’。當犧牲線段SA於薄化製程中被移除，半導體晶粒108與第一重佈線路層106之間的電性連接被斷開。因此，在此階段，半導體晶粒108與第一重佈線路層106電性絕緣。在一些實施例中，薄化製程可以是機械研磨（mechanical grinding）、化學機械拋光（Chemical-Mechanical Polishing；CMP）、蝕刻或其他適宜的方法，於本發明並不加以限制。
在薄化製程後，保留的第二線段W2的高度H3可以實質上等於絕緣密封體112’被減少後的厚度H4。在一些實施例中，第二線段W2的高度H3可以介於50微米與250微米之間。此外，在薄化製程後可以形成端部110T。端部110T是第一線段W1與第二線段W2暴露出絕緣密封體112’的一部分。在一些實施例中，導線線段110’的端部110T實質上與絕緣密封體112’的頂面112T共平面。絕緣密封體112’的頂面112T相對於底面112B，第一重佈線路層106位於絕緣密封體112’的底面112B。
在示例性的實施例中，導線線段110’暴露出的端部110T可以用於與其他組件進一步地電性連接。也就是說，第一線段W1可以用於將半導體晶粒108電性連接至形成在半導體晶粒108上的其他組件，而第二線段W2可以用於將第一重佈線路層106電性連接至形成在第一重佈線路層106上的其他組件。上述方法的優點為第一重佈線路層106的連接元件（如：第二線段W2）與第一半導體晶粒108的連接元件（如：第一線段W1）是同一製程所形成的，藉此簡化製程並可能降低單個封裝結構的製造成本。
請參照圖1G，在後續步驟中，第二重佈線路層114可以形成於絕緣密封體112’的頂面112T上。舉例來說，可以利用與形成第一重佈線路層106相同的方法形成第二重佈線路層114，因此在此省略了詳細描述。
如圖1G所示，第二重佈線路層114可以包括多個介電層114a以及嵌入於介電層114a中的多個導電元件114b。此外，導電元件114b可以藉由端部110T電性連接至導線線段110’。也就是說，導電元件114b可以在端部110T處接觸導線線段110’。舉例來說，第一線段W1將半導體晶粒108電性連接至第二重佈線路層114，且第二線段W2將第一重佈線路層106電性連接至第二重佈線路層114，其中第二線段W2比第一線段W1長。在一些實施例中，第一線段W1具有從半導體晶粒108延伸至第二重佈線路層114的實質上垂直的輪廓，且第二線段W2具有從第一重佈線路層106延伸至第二重佈線路層114的實質上垂直的輪廓。另外，第二重佈線路層114具有表面Z1，表面Z1具有暴露一部分導電元件114b的多個開口OP3，且表面Z2與表面Z1相對。
請參照圖1H，在形成第二重佈線路層114之後，如圖1G所示的封裝結構可以藉由載板轉移接合（carrier transfer bonding）轉移至第二載板120上。舉例來說，第二載板120可以藉由第二離型層122貼附至第二重佈線路層114的表面Z1。第二載板120及第二離型層122可以由上述與第一載板102及第一離型層104相同的材料構成。在將第二載板120接合至第二重佈線路層114之後，可以移除第一載板102。在一些實施例中，第一離型層104可以是光熱轉換（LTHC）黏著層，且可以在照射UV光後剝離第一載板102。在移除第一載板102時，暴露出第一重佈線路層106的第二表面S2。第一重佈線路層106的一些導電元件106b暴露在第二表面S2，以可以作為進一步地連接。
請參照圖1I，在移除第一載板102之後，將第二半導體晶粒201配置於第一重佈線路層106的第二表面S2上。在一些實施例中，第二半導體晶粒201可以是動態隨機存取記憶體（dynamic random access memory；DRAM）或NAND 快閃記憶體（NAND flash memory），但本發明不限於此。其他適宜的半導體裝置也可以作為第二半導體晶粒201。第二半導體晶粒201可以包括半導體基板202、多個導電接墊204以及多個導電凸塊206。
在示例性的實施例中，導電接墊204位於第二半導體晶粒201的主動面AS2上。導電凸塊206電性連接至多個導電接墊204。第二半導體晶粒201的主動面AS2可以面對第一重佈線路層106。換句話說，第二半導體晶粒201可以是以面朝下（face-down）的方式配置。也就是說，第二半導體晶粒201藉由覆晶接合（flip-chip bonding）電性連接至第一重佈線路層106。此外，多個導電凸塊206可以電性連接至第一重佈線路層106。在一些實施例中，多個導電凸塊206可以包括銅、鎳或其他類型的導電凸塊材料。舉例而言，導電凸塊206可以包括銅柱、位於銅柱上的錫銀合金凸塊，以及位於銅柱以及錫銀合金凸塊之間的鎳層，但本發明不限於此。
請參照圖1J，在下一步，可以選擇性地形成底膠208以填入第二半導體晶粒201、多個導電凸塊206與第一重佈線路層106之間的空隙。底膠208可以有助於保護導電凸塊206抵抗熱或物理壓力。作為底膠208的材料可以包括聚合物材料或樹脂。在一些實施例中，底膠208可以是毛細填充膠（capillary underfill；CUF）。
請參照圖1K，在形成底膠208之後，可以在第一重佈線路層106上方形成第二絕緣密封體210，以包覆第二半導體晶粒201與底膠208。第二絕緣密封體210可以由上述與第一絕緣密封體112’相似的材料與製程所形成，但本發明並不加以限制。
請參照圖1L，在後續的步驟中，可以移除第二載板120以露出第二重佈線路層114的表面Z1。舉例來說，第二離型層122可以是光熱轉換黏著層，且可以在照射紫外（UV）光後剝離第二載板120。在移除第二載板120時，露出第二重佈線路層114的開口OP3，從而暴露部分的多個導電元件114b。
請參照圖1M，可以於第二重佈線路層114的開口OP3中形成多個導電端子125。導電端子125可以透過開口OP3與第二重佈線路層114的導電元件114b電性連接。因此，導電端子125可以藉由導線線段110’與半導體晶粒108及第一重佈線路層106電性連接。在一些實施例中，導電端子125藉由凸塊底金屬（under-ball metallurgy；UBM）圖案電性連接至第二重佈線路層114。在其他實施例中，可以省略凸塊底金屬圖案。在一些實施例中，導電端子125例如是焊球（solder ball）或球柵陣列封裝（ball grid array；BGA）。在一些實施例中，導電端子125例如可以藉由植球製程（ball mounting process）以及回焊製程（reflow process）來形成。
接著，如圖1N所示，沿著切割線（dicing line；DL）執行切割製程（dicing process）或切單製程（singulation process），以切割整個晶圓/面板結構（切穿絕緣密封體112’、第二絕緣密封體210、第一重佈線路層106以及第二重佈線路層114），而構成多個封裝體。在示例性的實施例中，切割製程為包括機械刀片鋸切（mechanical blade sawing）或雷射切割的晶圓切割製程或面板切割製程。
請參照圖1O，在切割製程之後，得到個別的封裝結構10。封裝結構10例如是封裝層疊（package-on-package；PoP）結構。舉例來說，如圖1O所示，封裝結構10包括至少一個第一封裝體100以及第二封裝體200。在示例性的實施例中，第一封裝體100包括第一重佈線路層106、半導體晶粒108、第二重佈線路層114、多個導線線段110’、絕緣密封體112’以及多個導電端子125。第二封裝體200包括第二半導體晶粒201以及包覆第二半導體晶粒201的第二絕緣密封體210，其中第二封裝體200堆疊在第一重佈線路層106的第二表面S2上以及第一封裝體100上方。
圖2是依據本發明另一實施例的封裝結構15的剖面示意圖。圖2的封裝結構15類似於圖1O的封裝結構10，因此採用相同的標號來表示相同或近似的元件，故於此不加以贅述。圖2的封裝結構15與圖1O的封裝結構10差異在於：在圖2的第二封裝體200’中不具有底膠（因無，故無繪示）。封裝結構15的製程可以類似於封裝結構10的製程，並將形成底膠的步驟（如：圖1J中形成底膠208的步驟）省略而製得。
圖3是依據本發明又一實施例的封裝結構20的剖面示意圖。圖3的封裝結構20類似於圖1O的封裝結構10，因此採用相同的標號來表示相同或近似的元件，故於此不加以贅述。圖3的封裝結構20與圖1O的封裝結構10差異在於：第二封裝體200”的第二半導體晶粒201’藉由打線接合電性連接至第一封裝體100的第一重佈線路層106。也就是說，第二半導體晶粒201’的主動面AS2可以背離第一重佈線路層106。換句話說，半導體晶粒201’可以是以面朝上的方式配置。黏著層207可以介於第二半導體晶粒201’的背面BS2與第一重佈線路層106之間。透過多個導線線段205可以構成第二半導體晶粒201’與第一重佈線路層106之間的電性連接。
綜上所述，本發明的封裝結構形成有多個導線線段，其中導線線段將半導體晶粒電性連接至第二重佈線路層，且將第一重佈線路層電性連接至第二重佈線路層。因此，導線線段（藉由打線接合形成）可以用於取代在傳統封裝結構（或封裝層疊結構）中，用以提供重佈線路層與半導體晶粒之間的垂直連接的銅柱、銅凸塊或絕緣穿孔（through insulator vias；TIV）。整體而言，藉此可以實現封裝結構的製造過程之簡單化，進而降低製造成本。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10、15、20：封裝結構 100：第一封裝體 102：第一載板 104：第一離型層 106：第一重佈線路層 106a、114a：介電層 106b、114b：導電元件 107、207：黏著層 108：半導體晶粒 108a、202：半導體基板 108b：接觸墊 108c：保護層 108d：後護層 110：導線 110’、205：導線線段 110T：端部 112：絕緣材料 112’：絕緣密封體 112B：底面 112T：頂面 114：第二重佈線路層 120：第二載板 122：第二離型層 125：導電端子 200、200’、200”：第二封裝體 201、201’：第二半導體晶粒 204：導電接墊 206：導電凸塊 208：底膠 210、210’：第二絕緣密封體 AS1、AS2：主動面 BS1、BS2：背面 DL：切割線 H1、H3：高度 H2、H4：厚度 OP1、OP2、OP3：開口 S1：第一表面 S2：第二表面 SA：犧牲線段 T1：第一凸塊 T2：第二凸塊 W1：第一線段 W2：第二線段 Z1、Z2：表面
圖1A至圖1O是依據本發明一實施例的製造封裝結構的方法中各個階段的剖面示意圖。 圖2是依據本發明另一實施例的封裝結構的剖面示意圖。 圖3是依據本發明又一實施例的封裝結構的剖面示意圖。
10：封裝結構 100：第一封裝體 106：第一重佈線路層 108：半導體晶粒 110’：導線線段 112’：絕緣密封體 114：第二重佈線路層 114b：導電元件 125：導電端子 200：第二封裝體 201：第二半導體晶粒 202：半導體基板 204：導電接墊 206：導電凸塊 210：第二絕緣密封體 OP3：開口 S2：第二表面 Z1：表面

Claims (9)

  1. 一種封裝結構，包括：第一封裝體，包括：半導體晶粒，具有主動面與背面；絕緣密封體，包覆所述半導體晶粒；第一重佈線路層，位於所述半導體晶粒的所述背面與所述絕緣密封體的底面上，所述第一重佈線路層具有第一表面與相對於所述第一表面的第二表面；黏著層，位於所述第一重佈線路層與所述半導體晶粒的所述背面之間，所述黏著層具有被所述絕緣密封體包覆的側邊，且所述黏著層未覆蓋所述半導體晶粒的所述主動面；第二重佈線路層，位於所述半導體晶粒的所述主動面上；以及多個導線線段，將所述半導體晶粒電性連接至所述第二重佈線路層，且將所述第一重佈線路層電性連接至所述第二重佈線路層；以及第二封裝體，堆疊於所述第一封裝體上的所述第一重佈線路層的所述第二表面上。
  2. 如申請專利範圍第1項所述的封裝結構，其中：所述多個導線線段包括多個第一線段與多個第二線段；所述多個第一線段具有實質上垂直的輪廓且將所述半導體晶粒電性連接至所述第二重佈線路層； 所述多個第二線段具有實質上垂直的輪廓且將所述第一重佈線路層電性連接至所述第二重佈線路層；且所述多個第二線段比所述多個第一線段長。
  3. 如申請專利範圍第2項所述的封裝結構，更包括：多個第一凸塊，接合至所述半導體晶粒；以及多個第二凸塊，接合至所述第一重佈線路層，其中所述多個第一凸塊電性連接至所述多個第一線段，且所述多個第二凸塊電性連接至所述多個第二線段。
  4. 如申請專利範圍第3項所述的封裝結構，其中每一所述多個第一線段及所述多個第二線段的端部與所述絕緣密封體的頂面共平面，所述絕緣密封體的所述頂面相對於所述絕緣密封體的所述底面。
  5. 如申請專利範圍第1項所述的封裝結構，其中所述絕緣密封體包覆所述多個導線線段。
  6. 如申請專利範圍第1項所述的封裝結構，其中所述第二封裝體包括第二半導體晶粒以及包覆所述第二半導體晶粒的第二絕緣密封體，所述第二半導體晶粒藉由多個導電凸塊或藉由打線接合而電性連接至所述第一封裝體的所述第一重佈線路層。
  7. 如申請專利範圍第1項所述的封裝結構，更包括：多個導電端子，配置於所述第二重佈線路層上，且電性連接至所述第二重佈線路層。
  8. 一種封裝結構的製造方法，包括： 提供載板；形成第一封裝體於所述載板上，其中形成所述第一封裝體的步驟包括：形成第一重佈線路層於所述載板上，其中所述第一重佈線路層具有第一表面與相對於所述第一表面的第二表面；接合半導體晶粒於所述第一重佈線路層的所述第一表面上；藉由多條導線以將所述半導體晶粒電性連接至所述第一重佈線路層；形成絕緣材料以包覆所述半導體晶粒與所述多個導線；進行薄化製程，以減少所述絕緣材料的厚度直到移除每一所述多個導線的一部分以形成多個導線線段，而形成絕緣密封體，其中在進行所述薄化製程之後，所述半導體晶粒與所述第一重佈線路層電性絕緣；以及形成第二重佈線路層於所述絕緣密封體的頂面上與所述半導體晶粒上，其中所述多個導線線段將所述第二重佈線路層電性連接至所述半導體晶粒，且將所述第二重佈線路層電性連接至所述第一重佈線路層。
  9. 如申請專利範圍第8項所述的封裝結構的製造方法，更包括：形成堆疊於所述第一重佈線路層的所述第二表面上及所述第一封裝體上方的第二封裝體。
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