TWI682447B - Element wafer manufacturing method - Google Patents

Element wafer manufacturing method Download PDF

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TWI682447B
TWI682447B TW105105708A TW105105708A TWI682447B TW I682447 B TWI682447 B TW I682447B TW 105105708 A TW105105708 A TW 105105708A TW 105105708 A TW105105708 A TW 105105708A TW I682447 B TWI682447 B TW I682447B
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wafer
adhesive
liquid crystal
back surface
grinding
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TW201709301A (en
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杉谷哲一
灰本隆志
小清水秀輝
荒谷侑里香
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Die Bonding (AREA)

Abstract

本發明的課題為提供一種縮短了接著層的形成所需要的時間之元件晶片的製造方法。解決手段是從在以複數條分割預定線所劃分出的正面側的各區域中各自具備有元件的晶圓中，製造對應於各元件的複數個元件晶片的元件晶片的製造方法，其包含下列步驟：溝形成步驟，在晶圓的正面側沿著分割預定線形成深度相當於元件晶片的完成厚度的溝；磨削步驟，將保護構件黏貼在晶圓的正面，並磨削晶圓的背面以使溝露出於背面側，而將晶圓分割成一個個的元件晶片；接著劑塗佈步驟，實施磨削步驟後，將液狀晶粒接合用接著劑噴射而塗佈在已分割的晶圓的背面；以及硬化步驟，實施接著劑塗佈步驟後，使液狀晶粒接合用接著劑硬化。 An object of the present invention is to provide a method for manufacturing an element wafer that shortens the time required for the formation of an adhesive layer. The solution is to manufacture a plurality of element chips corresponding to each element from a wafer provided with elements in each area on the front side divided by a plurality of planned dividing lines, which includes the following Steps: Groove forming step, forming a groove on the front side of the wafer along a predetermined dividing line with a depth equivalent to the completed thickness of the element wafer; grinding step, adhering the protective member to the front side of the wafer and grinding the back side of the wafer In order to expose the groove on the back side, the wafer is divided into individual device wafers; after the adhesive application step and the grinding step, the liquid crystal bonding adhesive is sprayed and applied to the divided crystals The back of the circle; and the hardening step, after the adhesive application step is performed, the adhesive for liquid crystal grain bonding is hardened.

Description

元件晶片的製造方法 Element wafer manufacturing method 發明領域 Field of invention

本發明是有關於將具備有複數個元件的晶圓分割，以製造對應於各個元件的元件晶片之製造方法。 The present invention relates to a method of dividing a wafer provided with a plurality of components to produce a component wafer corresponding to each component.

發明背景 Background of the invention

正面側形成有複數個元件的晶圓是例如以切削刀片沿著分割預定線(切割道(street))被切削，而被分割成複數個對應於各元件的元件晶片。為了將此元件晶片固定於其他的基板等上，會在元件晶片的背面側設置固定用的接著層。 The wafer with a plurality of elements formed on the front side is cut along a planned dividing line (street) with a cutting blade, for example, and is divided into a plurality of element wafers corresponding to the elements. In order to fix this element wafer to another substrate or the like, an adhesive layer for fixing is provided on the back side of the element wafer.

藉由使設置於背面側的接著層緊貼在固定對象之基板等上，並施加熱或光線等外在的刺激，可以使接著層硬化以固定元件晶片。作為接著層，所使用的是例如稱為晶粒接合膜(DAF：Die Attach Film)等的晶粒接合用的薄膜狀接著劑。 By attaching the adhesive layer provided on the back side to the substrate or the like to be fixed and applying external stimulation such as heat or light, the adhesive layer can be hardened to fix the element chip. As the adhesive layer, for example, a film-like adhesive for die bonding called a die attach film (DAF: Die Attach Film) is used.

此薄膜狀接著劑是形成為可將晶圓的整個背面覆蓋的大小，並被貼附於例如分割前的晶圓的背面。藉由將薄膜狀接著劑貼附於晶圓的背面後，再將此薄膜狀接著劑與晶圓一起分割，就能夠製造背面側具備有接著層的元 件晶片(參照例如專利文獻1)。 This film-like adhesive is formed in a size that can cover the entire back surface of the wafer, and is attached to, for example, the back surface of the wafer before dicing. By attaching a film-like adhesive to the back of the wafer, and then dividing the film-like adhesive with the wafer, a device with an adhesive layer on the back side can be manufactured Wafer (see, for example, Patent Document 1).

但是，由於上述之薄膜狀接著劑是柔軟的，因此，當以工作夾台等保持晶圓的背面側(薄膜狀接著劑側)來切削晶圓的正面側時，尤其是在成為切削刀片的切除側的晶圓背面側上，元件晶片容易形成缺陷。 However, since the film-like adhesive described above is soft, when the front side of the wafer is cut by holding the back side of the wafer (film-like adhesive side) with a work chuck or the like, especially when it becomes a cutting blade On the back side of the wafer on the cut side, the element wafer is prone to form defects.

於是，已有下列的元件晶片的製造方法被提出：於將晶圓的正面側半切割後再磨削背面側來分割成複數個元件晶片的DBG(Dicing Before Grinding)之後，才將薄膜狀接著劑貼附到背面側(參照例如專利文獻2)。在此製造方法中，是藉由雷射光線將在晶圓的背面側所貼附的薄膜狀接著劑切斷。 Therefore, the following method for manufacturing a device chip has been proposed: the film is bonded after the DBG (Dicing Before Grinding) which divides the front side of the wafer and then grinds the back side to divide into a plurality of device chips The agent is attached to the back side (see, for example, Patent Document 2). In this manufacturing method, the film-like adhesive attached to the back side of the wafer is cut by laser light.

先前技術文獻 Prior technical literature 專利文獻 Patent Literature

專利文獻1：日本專利特開2000-182995號公報 Patent Document 1: Japanese Patent Laid-Open No. 2000-182995

專利文獻2：日本專利特開2005-19525號公報 Patent Document 2: Japanese Patent Laid-Open No. 2005-19525

發明概要 Summary of the invention

不過，在此方法中，在貼附薄膜狀接著劑的階段中，由於晶圓已被分割成元件晶片，因此在貼附薄膜狀接著劑的製程及搬送晶圓的製程等中，元件晶片彼此的間隔會容易發生改變。藉此，會有導致以元件晶片的間隔所規定的分割預定線蛇行彎曲，而變得並非直線的狀況。 However, in this method, in the stage of attaching the film-like adhesive, since the wafer has been divided into element wafers, in the process of attaching the film-like adhesive, the process of transporting the wafer, etc., the element wafers are mutually The interval will change easily. Thereby, there may be a situation where the planned dividing line defined by the interval of the element wafers meanders and becomes non-straight.

為此，以此方法將薄膜狀接著劑切斷時，必須對 晶圓的每條分割預定線重新調整雷射光線的照射位置。尤其是在元件晶片較小的情況下(例如，5mm角以下)，分割預定線的數量變多，在加工上需要花費較長的時間。 For this reason, when cutting the film-like adhesive in this way, you must Each predetermined dividing line of the wafer readjusts the irradiation position of the laser beam. Especially in the case where the element wafer is small (for example, 5 mm or less), the number of lines to be divided increases, and it takes a long time for processing.

本發明是有鑒於所述問題點而作成的發明，其目的在於提供一種縮短接著層的形成所需的時間之元件晶片的製造方法。 The present invention has been made in view of the above-mentioned problems, and its object is to provide a method for manufacturing an element wafer that shortens the time required for the formation of a bonding layer.

根據本發明所提供的元件晶片的製造方法，是從在以複數條分割預定線所劃分出的正面側的各區域中各自具備有元件的晶圓中，製造對應於各元件的複數個元件晶片的元件晶片的製造方法，其特徵在於具備：溝形成步驟，在晶圓的該正面側沿著該分割預定線形成深度相當於該元件晶片的完成厚度的溝；磨削步驟，將保護構件黏貼在晶圓的該正面，並磨削晶圓的背面以使該溝露出於該背面側，而將晶圓分割成一個個的該元件晶片；接著劑塗佈步驟，實施該磨削步驟後，將液狀晶粒接合用接著劑噴射而塗佈在已分割的晶圓的該背面；及硬化步驟，實施該接著劑塗佈步驟實施後，使該液狀晶粒接合用接著劑硬化。 According to the method for manufacturing a device chip provided by the present invention, a plurality of device chips corresponding to each device are manufactured from wafers each provided with a device in each area on the front side divided by a plurality of predetermined dividing lines The method of manufacturing an element wafer is characterized by comprising: a groove forming step, forming a groove with a depth corresponding to the completed thickness of the element wafer along the planned dividing line on the front side of the wafer; a grinding step, and attaching a protective member On the front surface of the wafer, and grind the back surface of the wafer to expose the groove to the back surface side, and divide the wafer into the element wafers; the adhesive coating step, after performing the grinding step, Spraying and applying a liquid crystal bonding agent to the back surface of the divided wafer; and a hardening step, after performing the adhesive coating step, hardening the liquid crystal bonding agent.

在本發明中，在該接著劑塗佈步驟中，也可以藉由噴霧器的噴塗來塗佈該液狀晶粒接合用接著劑。 In the present invention, in the adhesive application step, the adhesive for liquid crystal grain bonding may be applied by spraying with a sprayer.

在本發明的元件晶片的製造方法中，由於是在將 溝形成在晶圓的正面側，並磨削背面而將晶圓分割成元件晶片後，將液狀晶粒接合用接著劑噴射而塗佈在晶圓的背面，因此，可以藉由使此液狀晶粒接合用接著劑硬化，而在各元件晶片上形成接著層。亦即，在本發明的元件晶片的製造方法中，由於沒有以雷射光線等將接著層切斷的必要，因此能縮短接著層的形成所需要的時間。 In the method of manufacturing an element wafer of the present invention, since The groove is formed on the front side of the wafer, and the back side is ground to divide the wafer into component wafers, and then the liquid crystal bonding agent is sprayed and applied on the back side of the wafer. Therefore, this liquid can be used The bonding agent for shaped die bonding is hardened to form an adhesive layer on each element wafer. That is, in the method for manufacturing an element wafer of the present invention, since there is no need to cut the adhesive layer with laser light or the like, the time required for the formation of the adhesive layer can be shortened.

2‧‧‧切削裝置 2‧‧‧Cutting device

4、14、34‧‧‧工作夾台 4,14,34‧‧‧Work clamping table

6‧‧‧切削單元 6‧‧‧Cutting unit

8‧‧‧主軸殼體 8‧‧‧spindle housing

10‧‧‧切削刀片 10‧‧‧Cutting insert

11‧‧‧晶圓 11‧‧‧ Wafer

11a‧‧‧正面 11a‧‧‧Front

11b‧‧‧背面 11b‧‧‧Back

12‧‧‧磨削裝置 12‧‧‧Grinding device

13‧‧‧元件 13‧‧‧ Components

14a、34a、44a、54a‧‧‧保持面 14a, 34a, 44a, 54a

15‧‧‧溝 15‧‧‧Ditch

16‧‧‧磨削單元 16‧‧‧Grinding unit

17‧‧‧元件晶片 17‧‧‧Component chip

18‧‧‧主軸殼體 18‧‧‧spindle housing

20‧‧‧主軸 20‧‧‧spindle

21‧‧‧保護構件 21‧‧‧Protection member

21a‧‧‧第1面 21a‧‧‧The first side

21b‧‧‧第2面 21b‧‧‧The second side

22‧‧‧輪座 22‧‧‧wheel seat

23‧‧‧液狀晶粒接合用接著劑 23‧‧‧ Adhesive for liquid crystal bonding

24‧‧‧磨削輪 24‧‧‧Grinding wheel

26‧‧‧輪基台 26‧‧‧ Wheel Abutment

28‧‧‧磨削砥石 28‧‧‧ Grinding Whetstone

32‧‧‧噴覆裝置 32‧‧‧Spraying device

36‧‧‧噴霧單元(噴霧器) 36‧‧‧Spray unit (sprayer)

38‧‧‧支撐臂 38‧‧‧support arm

40‧‧‧噴霧噴嘴 40‧‧‧ spray nozzle

42‧‧‧硬化裝置 42‧‧‧hardening device

44、54‧‧‧工作台 44, 54‧‧‧Workbench

46‧‧‧光源 46‧‧‧Light source

52‧‧‧噴射裝置 52‧‧‧Jet device

56‧‧‧噴射噴嘴 56‧‧‧Jet nozzle

A‧‧‧間隔 A‧‧‧Interval

B‧‧‧厚度 B‧‧‧Thickness

圖1是示意地顯示溝形成步驟的立體圖。 FIG. 1 is a perspective view schematically showing a groove forming step.

圖2是示意地顯示在磨削步驟中將保護構件貼附於晶圓上之情形的立體圖。 FIG. 2 is a perspective view schematically showing how the protective member is attached to the wafer in the grinding step.

圖3(A)及圖3(B)是示意地顯示在磨削步驟中晶圓被磨削之情形的側面圖。 FIG. 3(A) and FIG. 3(B) are side views schematically showing how the wafer is ground in the grinding step.

圖4(A)是示意地顯示接著劑塗佈步驟的局部剖面側面圖，圖4(B)是將圖4(A)的一部分放大顯示的圖。 FIG. 4(A) is a partial cross-sectional side view schematically showing an adhesive application step, and FIG. 4(B) is a view showing an enlarged part of FIG. 4(A).

圖5是示意地顯示硬化步驟的局部剖面側面圖。 FIG. 5 is a partial cross-sectional side view schematically showing the hardening step.

圖6是示意地顯示變形例的接著劑塗佈步驟的局部剖面側面圖。 6 is a partial cross-sectional side view schematically showing an adhesive applying step of a modification.

用以實施發明之形態 Forms for carrying out the invention

以下，參照附圖說明本發明的實施形態。本實施形態的元件晶片的製造方法包含溝形成步驟(參照圖1)、磨削步驟(參照圖2、圖3(A)以及圖3(B))、接著劑塗佈步驟(參照圖4(A)以及圖4(B))以及硬化步驟(參照圖5)。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The method for manufacturing an element wafer of this embodiment includes a groove forming step (see FIG. 1), a grinding step (see FIG. 2, FIG. 3(A), and FIG. 3(B)), and an adhesive coating step (see FIG. 4( A) and FIG. 4(B)) and the hardening step (see FIG. 5).

在溝形成步驟中，是在晶圓的正面側形成沿著分 割預定線之溝。在磨削步驟中，是藉由將保護構件貼附在晶圓的正面並磨削背面，以使溝露出於背面側而將晶圓分割成元件晶片。在接著劑塗佈步驟中，是將液狀晶粒接合用接著劑噴射而塗佈在晶圓的背面。在硬化步驟中，是使所塗佈的液狀晶粒接合用接著劑硬化。以下，詳細敘述本實施形態的元件晶片的製造方法。 In the trench forming step, the split along the front side of the wafer is formed Cut the groove of the scheduled line. In the grinding step, the protective member is attached to the front surface of the wafer and the back surface is ground so that the groove is exposed to the back surface, and the wafer is divided into element wafers. In the adhesive application step, the adhesive for liquid crystal grain bonding is sprayed and applied to the back surface of the wafer. In the hardening step, the applied adhesive for bonding liquid crystal grains is hardened. Hereinafter, the method of manufacturing the element wafer of this embodiment will be described in detail.

首先，實施在晶圓的正面側形成沿著分割預定線的溝的溝形成步驟。圖1是示意地顯示溝形成步驟的立體圖。如圖1所示，本實施形態的晶圓11是例如由矽等半導體材料形成的圓板，並將其正面11a側區分成中央的元件區域、與包圍元件區域的外周剩餘區域。 First, a groove forming step of forming a groove along the line to be divided on the front side of the wafer is performed. FIG. 1 is a perspective view schematically showing a groove forming step. As shown in FIG. 1, the wafer 11 of the present embodiment is a circular plate formed of a semiconductor material such as silicon, and the front surface 11 a side is divided into a central element region and a peripheral outer region surrounding the element region.

元件區域是以排列成格子狀的複數條分割預定線(切割道)進一步劃分成複數個區域，且在各個區域中形成有IC、LSI等元件13。再者，在本實施形態中，雖然將由矽等半導體材料形成的圓板作為晶圓11使用，但晶圓11的材質、形狀等並無限制。例如，也可以將由陶瓷、樹脂、金屬等之材料所形成之板作為晶圓11來使用。 The element region is further divided into a plurality of regions by a plurality of planned dividing lines (dicing lines) arranged in a grid, and elements 13 such as IC and LSI are formed in the respective regions. In addition, in this embodiment, although a circular plate formed of a semiconductor material such as silicon is used as the wafer 11, the material and shape of the wafer 11 are not limited. For example, a plate formed of a material such as ceramics, resin, or metal may be used as the wafer 11.

本實施形態的溝形成步驟是以例如圖1所示的切削裝置2實施。切削裝置2具備有吸引、保持晶圓11的背面11b側的工作夾台4。工作夾台4被連結在包含馬達等的旋轉機構(圖未示)，並以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。此外，在工作夾台4的下方設置有移動機構(圖未示)，工作夾台4是藉由此移動機構而在水平方向上移動。 The groove forming step of this embodiment is implemented by, for example, the cutting device 2 shown in FIG. 1. The cutting device 2 includes a work chuck 4 that attracts and holds the back surface 11 b side of the wafer 11. The work clamp table 4 is connected to a rotation mechanism (not shown) including a motor and the like, and rotates around a rotation axis substantially parallel to the vertical direction. In addition, a moving mechanism (not shown) is provided below the work clamp table 4, and the work clamp table 4 is moved in the horizontal direction by this movement mechanism.

工作夾台4的上表面成為吸引、保持晶圓11的背 面11b側的保持面。在此保持面上，是通過形成於工作夾台4的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用以吸引晶圓11的吸引力。 The upper surface of the work chuck 4 becomes the back that attracts and holds the wafer 11 The holding surface on the side of the surface 11b. On this holding surface, a negative pressure of a suction source (not shown) is caused by a flow path (not shown) or the like formed in the work chuck table 4 to generate a suction force to attract the wafer 11.

工作夾台4的上方配置有切削單元6。切削單元6具備有受到升降機構(圖未示)所支撐的主軸殼體8。在主軸殼體8的內部收容有被連結到包含馬達等的旋轉機構(圖未示)的主軸(圖未示)。 A cutting unit 6 is arranged above the work clamp table 4. The cutting unit 6 includes a spindle housing 8 supported by a lifting mechanism (not shown). A spindle (not shown) connected to a rotating mechanism (not shown) including a motor or the like is housed inside the spindle housing 8.

主軸是藉由從旋轉機構所傳達的旋轉力而以繞著大致平行於水平方向的旋轉軸的方式旋轉，且藉由升降機構而與主軸殼體8一起升降。又，主軸的一端部露出於主軸殼體8的外部。此主軸的一端部裝設有圓環狀的切削刀片10。 The main shaft rotates around the rotation axis substantially parallel to the horizontal direction by the rotating force transmitted from the rotating mechanism, and moves up and down together with the main shaft housing 8 by the lifting mechanism. In addition, one end of the main shaft is exposed outside the main shaft housing 8. An annular cutting blade 10 is installed at one end of the main shaft.

在溝形成步驟中，首先，是使晶圓11的背面11b接觸於工作夾台4的保持面，並使吸引源的負壓作用。藉此，晶圓11會以正面11a露出於上方的狀態被吸引、保持在工作夾台4上。 In the groove forming step, first, the back surface 11b of the wafer 11 is brought into contact with the holding surface of the work chuck 4 and the negative pressure of the suction source is applied. As a result, the wafer 11 is attracted and held on the work chuck 4 with the front surface 11a exposed above.

其次，使工作夾台4與切削刀片10相對地移動、旋轉，將切削刀片10對準於與加工對象的分割預定線對應的位置。之後，讓已使其旋轉的切削刀片10下降至相當於元件晶片的完成厚度的高度，並使工作夾台4在與加工對象的分割預定線平行的方向上移動。 Next, the work chuck table 4 is moved and rotated relatively to the cutting insert 10, and the cutting insert 10 is aligned at a position corresponding to the line to be divided of the object to be processed. After that, the cutting blade 10 that has been rotated is lowered to a height corresponding to the completed thickness of the element wafer, and the work chuck table 4 is moved in a direction parallel to the planned dividing line of the processing object.

藉此，沿著加工對象的分割預定線切削晶圓11的正面11a側，而可以形成深度相當於元件晶片的完成厚度的溝15。當重覆進行此工序，而沿著全部的分割預定線形 成溝15後，溝形成步驟即結束。 With this, the front surface 11a side of the wafer 11 is cut along the line to be divided of the object to be processed, and a groove 15 having a depth corresponding to the completed thickness of the element wafer can be formed. When repeating this process, and along the entire division of the predetermined line After the groove 15 is formed, the groove forming step ends.

再者，在本實施形態中，是在相鄰的元件晶片之間，形成不填充後述的液狀晶粒接合用接著劑的寬度較窄的溝15(亦即，使用較薄的切削刀片10)。不過，溝15的寬度(切削刀片10的厚度)並沒有限制，可任意設定、變更。 In addition, in this embodiment, a narrow groove 15 (that is, using a thinner cutting blade 10) is formed between adjacent element wafers without filling a liquid crystal bonding adhesive described later. ). However, the width of the groove 15 (thickness of the cutting insert 10) is not limited, and can be arbitrarily set and changed.

於溝形成步驟後，在將保護構件貼附在晶圓11的正面11a之後，實施磨削背面11b的磨削步驟。圖2是示意地顯示在磨削步驟中將保護構件貼附於晶圓11上之情形的立體圖，圖3(A)以及圖3(B)是示意地顯示在磨削步驟中晶圓11被磨削之情形的側面圖。 After the groove forming step, after the protective member is attached to the front surface 11a of the wafer 11, the grinding step of grinding the back surface 11b is performed. FIG. 2 is a perspective view schematically showing a state where the protective member is attached to the wafer 11 in the grinding step, and FIGS. 3(A) and 3(B) schematically show that the wafer 11 is Side view of the grinding situation.

在磨削步驟中，首先，如圖2所示，是將保護構件21貼附在晶圓11的正面11a上。保護構件21是例如與晶圓11大致相同形狀的黏著膠帶、樹脂基板、與晶圓11同種或異種的晶圓等。在本實施形態中，是使此保護構件21的第1面21a與晶圓11的正面11a接觸，以將保護構件21貼附在晶圓11上。藉此，能防止由磨削時所施加的荷重等引起的元件13的破損。 In the grinding step, first, as shown in FIG. 2, the protective member 21 is attached to the front surface 11 a of the wafer 11. The protective member 21 is, for example, an adhesive tape having substantially the same shape as the wafer 11, a resin substrate, a wafer of the same kind or a different kind from the wafer 11, and the like. In the present embodiment, the first surface 21 a of the protective member 21 is brought into contact with the front surface 11 a of the wafer 11 to attach the protective member 21 to the wafer 11. With this, it is possible to prevent damage to the element 13 caused by the load applied during grinding and the like.

將保護構件21貼附在晶圓11的正面11a後，會磨削晶圓11的背面11b。晶圓11的磨削是以例如圖3(A)以及圖3(B)所示的磨削裝置12實施。磨削裝置12具備有吸引、保持晶圓11的工作夾台14。 After the protective member 21 is attached to the front surface 11 a of the wafer 11, the back surface 11 b of the wafer 11 is ground. The grinding of the wafer 11 is performed by, for example, the grinding device 12 shown in FIGS. 3(A) and 3(B). The grinding device 12 includes a work chuck 14 that attracts and holds the wafer 11.

工作夾台14被連結於包含馬達等之旋轉機構(圖未示)，並以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。又，工作夾台14的下方設置有移動機構(圖未示)，工作夾台 14是藉此移動機構而在水平方向上移動。 The work clamp 14 is connected to a rotation mechanism (not shown) including a motor and the like, and rotates around a rotation axis that is substantially parallel to the vertical direction. In addition, a moving mechanism (not shown) is provided below the work clamp table 14, the work clamp table 14 is to move in the horizontal direction by this moving mechanism.

工作夾台14的上表面成為吸引、保持被貼附在晶圓11上的保護構件21的第2面21b側的保持面14a。在此保持面14a上，是通過形成於工作夾台14的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用以吸引晶圓11以及保護構件21的吸引力。 The upper surface of the work chuck 14 serves as a holding surface 14 a that attracts and holds the second surface 21 b of the protection member 21 attached to the wafer 11. On the holding surface 14a, a negative pressure action of a suction source (not shown) is generated by a flow path (not shown) formed in the work chuck table 14 and the like, thereby generating a wafer 11 and a protective member for suction 21 attraction.

工作夾台14的上方配置有磨削單元16。磨削單元16具備被升降機構(圖未示)所支撐的主軸殼體18。主軸殼體18中收容有構成大致平行於鉛直方向的旋轉軸的主軸20。 A grinding unit 16 is arranged above the work clamp table 14. The grinding unit 16 includes a spindle housing 18 supported by a lifting mechanism (not shown). The spindle housing 18 houses a spindle 20 that constitutes a rotation axis that is substantially parallel to the vertical direction.

主軸20的下端部固定有圓盤狀的輪座22。輪座22的下表面裝設有與輪座22大致相同直徑的磨削輪24。磨削輪24具備有以不銹鋼、鋁等金屬材料所形成的輪基台26。輪基台26的下表面，環狀地配置排列有複數個磨削砥石28。 A disc-shaped wheel base 22 is fixed to the lower end of the main shaft 20. The lower surface of the wheel base 22 is provided with a grinding wheel 24 having substantially the same diameter as the wheel base 22. The grinding wheel 24 includes a wheel base 26 formed of a metal material such as stainless steel or aluminum. On the lower surface of the wheel base 26, a plurality of grinding stones 28 are arranged in a ring shape.

主軸20的上端側(基端側)連結有包含馬達等的旋轉機構(圖未示)。磨削輪24是藉由從此旋轉機構所傳達的旋轉力，而以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。 A rotating mechanism (not shown) including a motor or the like is connected to the upper end side (base end side) of the main shaft 20. The grinding wheel 24 rotates about a rotation axis substantially parallel to the vertical direction by the rotation force transmitted from this rotation mechanism.

磨削晶圓11的背面11b時，首先，是使貼附在晶圓11上的保護構件21的第2面21b接觸於工作夾台14的保持面14a，並使吸引源的負壓作用。藉此，晶圓11會以背面11b側露出於上方的狀態被吸引、保持於工作夾台14。 When grinding the back surface 11b of the wafer 11, first, the second surface 21b of the protective member 21 attached to the wafer 11 is brought into contact with the holding surface 14a of the work chuck 14 and the negative pressure of the suction source is applied. As a result, the wafer 11 is attracted and held on the work chuck 14 with the back surface 11b side exposed upward.

其次，使工作夾台14在磨削輪24的下方移動，並如圖3(A)所示，在使工作夾台14與磨削輪24各自旋轉時， 使主軸殼體18下降。主軸殼體18的下降速度(下降量)是設為使磨削砥石28的下表面被按壓在晶圓11的背面11b的程度。藉此，能夠磨削晶圓11的背面11b。 Next, the work clamp table 14 is moved below the grinding wheel 24, and as shown in FIG. 3(A), when the work clamp table 14 and the grinding wheel 24 are rotated, The spindle housing 18 is lowered. The lowering speed (amount of lowering) of the spindle housing 18 is set so that the lower surface of the grindstone 28 is pressed against the back surface 11 b of the wafer 11. Thereby, the back surface 11b of the wafer 11 can be ground.

晶圓11的磨削是例如一邊測量晶圓11的厚度一邊進行。如圖3(B)所示，當使晶圓11變薄到完成厚度為止，而使溝15露出於背面11b側時，磨削步驟即結束。藉由此磨削步驟，將晶圓11分割成對應於各元件13的複數個元件晶片17。 The grinding of the wafer 11 is performed, for example, while measuring the thickness of the wafer 11. As shown in FIG. 3(B), when the wafer 11 is thinned to the completed thickness and the groove 15 is exposed on the back surface 11b side, the grinding step is ended. By this grinding step, the wafer 11 is divided into a plurality of element chips 17 corresponding to the elements 13.

在磨削步驟之後，實施將液狀晶粒接合用接著劑塗佈在晶圓11的背面11b的接著劑塗佈步驟。圖4(A)是示意地顯示接著劑塗佈步驟的局部剖面側面圖，圖4(B)是將圖4(A)的一部分放大顯示的圖。接著劑塗佈步驟是以例如圖4(A)所示之噴覆裝置32來實施。 After the grinding step, an adhesive application step of applying the adhesive for liquid crystal grain bonding to the back surface 11b of the wafer 11 is performed. FIG. 4(A) is a partial cross-sectional side view schematically showing an adhesive application step, and FIG. 4(B) is a view showing an enlarged part of FIG. 4(A). The subsequent agent applying step is performed by, for example, the spraying device 32 shown in FIG. 4(A).

噴覆裝置32具備有吸引、保持晶圓11的工作夾台34。工作夾台34被連結在包含馬達等的旋轉機構(圖未示)，並以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。 The coating device 32 includes a work chuck table 34 that attracts and holds the wafer 11. The work clamp 34 is connected to a rotation mechanism (not shown) including a motor and the like, and rotates around a rotation axis substantially parallel to the vertical direction.

工作夾台34的上表面成為吸引、保持被貼附在晶圓11上的保護構件21的第2面21b側的保持面34a。在此保持面34a上，是通過形成於工作夾台34的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用以吸引晶圓11以及保護構件21的吸引力。 The upper surface of the work chuck 34 serves as a holding surface 34 a that attracts and holds the second surface 21 b side of the protective member 21 attached to the wafer 11. On the holding surface 34a, a negative pressure action of a suction source (not shown) is generated by a flow path (not shown) formed in the work clamp 34, etc., thereby generating a suction for the wafer 11 and a protective member 21 attraction.

工作夾台34的上方配置有朝向晶圓11的背面11b噴塗液狀晶粒接合用接著劑23的噴霧單元(噴霧器)36。噴霧單元(噴霧器)36包含L字形的支撐臂38、與固定在支撐臂38 的一端側的噴霧噴嘴40。 Above the work chuck 34, a spray unit (sprayer) 36 that sprays the adhesive 23 for liquid crystal grain bonding toward the back surface 11b of the wafer 11 is disposed. The spray unit (sprayer) 36 includes an L-shaped support arm 38 and a support arm 38 The spray nozzle 40 on one end side.

支撐臂38的另一端側連結有旋轉機構(圖未示)。此旋轉機構是在預定的角度範圍，讓支撐臂38旋轉以使噴霧噴嘴40搖動。又，噴霧噴嘴40是透過配管(圖未示)等而連接到液狀晶粒接合用接著劑23的供給源(圖未示)，且能夠將液狀晶粒接合用接著劑23向下噴射。 A rotation mechanism (not shown) is connected to the other end side of the support arm 38. This rotating mechanism rotates the support arm 38 to swing the spray nozzle 40 within a predetermined angle range. In addition, the spray nozzle 40 is connected to a supply source (not shown) of the liquid crystal bonding agent 23 through piping (not shown) or the like, and can spray the liquid crystal bonding agent 23 downward .

在本實施形態中，是使用以紫外線硬化的紫外線硬化型樹脂作為液狀晶粒接合用接著劑23。作為紫外線硬化型樹脂的具體例，可列舉出Henkel公司製的「Wafer Backside Coating」(註冊商標)等。不過，液狀晶粒接合用接著劑23的種類等並無限制，能夠使用以任意的外在刺激(例如，熱等)而硬化的硬化型樹脂(熱硬化型樹脂等)。 In this embodiment, an ultraviolet curing resin cured by ultraviolet is used as the adhesive 23 for liquid crystal grain bonding. Specific examples of the ultraviolet curable resin include "Wafer Backside Coating" (registered trademark) manufactured by Henkel Corporation. However, the type and the like of the liquid crystal bonding agent 23 are not limited, and a curable resin (thermosetting resin, etc.) that is cured by any external stimulus (for example, heat, etc.) can be used.

在接著劑塗佈步驟中，首先，是使貼附在晶圓11上的保護構件21的第2面21b接觸於工作夾台34的保持面34a，並使吸引源的負壓作用。藉此，晶圓11會以背面11b側露出於上方的狀態被吸引、保持於工作夾台34。 In the adhesive application step, first, the second surface 21b of the protective member 21 attached to the wafer 11 is brought into contact with the holding surface 34a of the work chuck 34, and the negative pressure of the suction source is applied. As a result, the wafer 11 is attracted and held on the worktable 34 with the back surface 11b side exposed upward.

其次，使工作夾台34旋轉，並且使液狀晶粒接合用接著劑23從已使其搖動的噴霧噴嘴40向下噴射。藉此，如圖4(A)及圖4(B)所示，能夠將液狀晶粒接合用接著劑23噴塗並塗佈在晶圓11(元件晶片17)的背面11b。 Next, the work clamp 34 is rotated, and the liquid crystal grain bonding adhesive 23 is sprayed downward from the spray nozzle 40 which has been shaken. Thereby, as shown in FIGS. 4(A) and 4(B), the adhesive 23 for liquid crystal grain bonding can be sprayed and applied to the back surface 11b of the wafer 11 (element wafer 17).

在本實施形態中，如上所述，由於將相鄰的元件晶片17的間隔A(溝15的寬度)做得較窄，因此不會有在相鄰的元件晶片17之間填充有液狀晶粒接合用接著劑23之情形。 In this embodiment, as described above, since the interval A (the width of the groove 15) of the adjacent element wafers 17 is made narrow, no liquid crystal is filled between the adjacent element wafers 17 In the case of the adhesive 23 for particle bonding.

又，液狀晶粒接合用接著劑23的供給量等，以在可以抑制在相鄰的元件晶片17上所塗佈的液狀晶粒接合用接著劑23彼此之接觸的範圍內進行調整為宜。 In addition, the supply amount of the liquid crystal bonding adhesive 23 and the like are adjusted within a range that can suppress the contact of the liquid crystal bonding adhesive 23 applied on the adjacent element wafer 17 to should.

例如，藉由將液狀晶粒接合用接著劑23的供給量調整成使所塗佈的液狀晶粒接合用接著劑23的厚度B比相鄰的元件晶片17的間隔A更小(A>B)，可以在相鄰的元件晶片17之間抑制液狀晶粒接合用接著劑23彼此之接觸。 For example, by adjusting the supply amount of the liquid crystal bonding adhesive 23 so that the thickness B of the applied liquid crystal bonding adhesive 23 is smaller than the interval A between adjacent device wafers 17 (A >B), the contact between the adhesives 23 for bonding of liquid crystal grains between adjacent element wafers 17 can be suppressed.

再者，藉由將液狀晶粒接合用接著劑23的供給量調整成使厚度B比間隔A的一半更小(0.5A>B)，可以更確實地在相鄰的元件晶片17之間防止液狀晶粒接合用接著劑23彼此的接觸。不過，液狀晶粒接合用接著劑23的供給量等並無限制，可以因應液狀晶粒接合用接著劑23的黏度等任意變更。 Furthermore, by adjusting the supply amount of the liquid crystal bonding agent 23 so that the thickness B is smaller than half of the interval A (0.5A>B), it is possible to more reliably between adjacent device wafers 17 The adhesives 23 for joining liquid crystal grains are prevented from contacting each other. However, the supply amount and the like of the adhesive 23 for liquid crystal grain bonding are not limited, and can be arbitrarily changed in accordance with the viscosity and the like of the adhesive 23 for liquid crystal grain bonding.

當將液狀晶粒接合用接著劑23塗佈在晶圓11(元件晶片17)的背面11b時，接著劑塗佈步驟即結束。在本實施形態中，如圖4(B)所示，由於是在背面11b側以包覆元件晶片17的角的方式塗佈液狀晶粒接合用接著劑23，因此也能提高元件晶片17的抗折強度。 When the adhesive 23 for liquid crystal grain bonding is applied to the back surface 11b of the wafer 11 (element wafer 17), the adhesive application step ends. In this embodiment, as shown in FIG. 4(B), since the liquid crystal bonding adhesive 23 is applied on the back surface 11b side so as to cover the corners of the element wafer 17, the element wafer 17 can also be improved Flexural strength.

在接著劑塗佈步驟之後，實施使被塗佈在晶圓11的背面11b的液狀晶粒接合用接著劑23硬化的硬化步驟。圖5是示意地顯示硬化步驟的局部剖面側面圖。硬化步驟是例如，以圖5所示的硬化裝置42來實施。 After the adhesive application step, a hardening step of hardening the adhesive 23 for liquid crystal grain bonding applied to the back surface 11 b of the wafer 11 is performed. FIG. 5 is a partial cross-sectional side view schematically showing the hardening step. The hardening step is performed by, for example, the hardening device 42 shown in FIG. 5.

硬化裝置42具備有保持晶圓11的工作台44。工作台44的上表面成為保持被貼附在晶圓11上的保護構件21的 第2面21b側的保持面44a。在工作台44的上方配置有放射紫外線(紫外光)的光源46。 The curing device 42 includes a stage 44 that holds the wafer 11. The upper surface of the table 44 serves to hold the protective member 21 attached to the wafer 11 The holding surface 44a on the second surface 21b side. A light source 46 that emits ultraviolet rays (ultraviolet light) is arranged above the table 44.

在硬化步驟中，首先，是以使被貼附在晶圓11上的保護構件21的第2面21b接觸於工作台44的保持面44a的方式，將晶圓11以及保護構件21載置在工作台44上。藉此，晶圓11會以被塗佈於背面11b的液狀晶粒接合用接著劑23露出於上方的狀態被保持在工作台44上。 In the hardening step, first, the wafer 11 and the protective member 21 are placed on the wafer 11 and the protective member 21 so that the second surface 21 b of the protective member 21 attached to the wafer 11 contacts the holding surface 44 a of the table 44. Workbench 44. As a result, the wafer 11 is held on the table 44 with the liquid crystal bonding adhesive 23 applied to the back surface 11 b exposed above.

其次，將紫外線從光源46照射到背面11b側的液狀晶粒接合用接著劑23上。藉此，能使液狀晶粒接合用接著劑23硬化。再者，紫外線的照射條件是在例如不使液狀晶粒接合用接著劑23完全硬化的範圍內進行設定。使液狀晶粒接合用接著劑23硬化(半硬化)而完成接著層後，硬化步驟即結束。 Next, ultraviolet light is irradiated from the light source 46 to the adhesive 23 for bonding of liquid crystal grains on the back surface 11b side. Thereby, the adhesive 23 for liquid crystal grain bonding can be hardened. In addition, the ultraviolet irradiation conditions are set in the range which does not completely harden the adhesive 23 for liquid crystal grain bonding, for example. After the adhesive 23 for liquid crystal grain bonding is hardened (semi-hardened) to complete the bonding layer, the hardening step ends.

如上所述，在本實施形態的元件晶片的製造方法中，由於是在晶圓11的正面11a側形成溝15，並磨削背面11b來將晶圓11分割成元件晶片17，之後，在晶圓11的背面11b噴射塗佈液狀晶粒接合用接著劑23，因此可以藉由使此液狀晶粒接合用接著劑23硬化，而在各元件晶片17上形成接著層。亦即，在本實施形態的元件晶片的製造方法中，由於沒有要以雷射光線等將接著層切斷的必要，因此能縮短接著層的形成所需要的時間。 As described above, in the method for manufacturing an element wafer of this embodiment, the groove 15 is formed on the front surface 11a side of the wafer 11 and the back surface 11b is ground to divide the wafer 11 into element wafers 17, and then The back surface 11 b of the circle 11 is spray-coated with the adhesive 23 for liquid crystal grain bonding. Therefore, the adhesive layer 23 for liquid crystal grain bonding can be hardened to form an adhesive layer on each element wafer 17. That is, in the method of manufacturing an element wafer of this embodiment, since there is no need to cut the adhesive layer with laser light or the like, the time required for the formation of the adhesive layer can be shortened.

又，在本實施形態的元件晶片的製造方法中，由於在背面11b側以包覆元件晶片17的角的方式塗佈液狀晶粒接合用接著劑23，因此也能提高元件晶片17的抗折強 度。 In addition, in the method for manufacturing an element wafer of this embodiment, since the liquid crystal bonding adhesive 23 is applied on the back surface 11b side so as to cover the corners of the element wafer 17, the resistance of the element wafer 17 can also be improved Fold strong degree.

其次，說明為了確認相鄰的元件晶片17的間隔A與液狀晶粒接合用接著劑23的厚度B的所期望的關係而進行的實驗。在本實驗中，準備元件晶片17的間隔A(亦即，溝15的寬度)或液狀晶粒接合用接著劑23的厚度B不同的複數個樣品，並確認了相鄰的元件晶片17透過液狀晶粒接合用接著劑23而被連結的「雙晶粒」之發生率。 Next, an experiment conducted to confirm the desired relationship between the interval A between adjacent element wafers 17 and the thickness B of the liquid crystal bonding agent 23 is described. In this experiment, a plurality of samples with different intervals A (that is, the width of the groove 15) of the element wafer 17 or the thickness B of the liquid crystal bonding agent 23 were prepared, and it was confirmed that the adjacent element wafer 17 penetrated Incidence of "dual grains" connected by the adhesive 23 for bonding of liquid crystal grains.

本實驗的結果如表1所示。再者，在表1的「評價」欄中，分別以○表示良好、△表示可、×表示不可。 The results of this experiment are shown in Table 1. In addition, in the "evaluation" column of Table 1, ○ indicates good, △ indicates possible, and X indicates unavailable.

Figure 105105708-A0202-12-0013-1
Figure 105105708-A0202-12-0013-1

從表1可知，當滿足A>B時，可以抑制雙晶粒的發生。尤其是，當滿足0.5A>B時，可以更確實地防止雙晶粒的發生。 As can be seen from Table 1, when A>B is satisfied, the occurrence of double crystal grains can be suppressed. In particular, when 0.5A>B is satisfied, the occurrence of double crystal grains can be more reliably prevented.

再者，本發明並不限定於上述實施形態之記載，可作各種變更而實施。例如，在上述實施形態中，雖然是以噴霧單元(噴霧器)36的噴塗來塗佈液狀晶粒接合用接著劑23，但也可以用其他的方法來塗佈液狀晶粒接合用接著劑23。 Furthermore, the present invention is not limited to the description of the above-mentioned embodiments, and can be implemented with various changes. For example, in the above embodiment, although the liquid crystal grain bonding adhesive 23 is applied by spraying of the spray unit (sprayer) 36, the liquid crystal grain bonding adhesive may be applied by other methods. twenty three.

圖6是示意地顯示變形例的接著劑塗佈步驟的局 部剖面側面圖。變形例的接著劑塗佈步驟是以例如圖6所示的噴射(inject)裝置52來實施。噴射裝置52具備有保持晶圓11的工作台54。工作台54的上表面成為保持被貼附在晶圓11上的保護構件21的第2面21b側的保持面54a。 FIG. 6 is a schematic view showing the state of the adhesive application step of the modification Side cross-sectional side view. The adhesive applying step of the modification is performed by, for example, an injection device 52 shown in FIG. 6. The injection device 52 includes a table 54 that holds the wafer 11. The upper surface of the table 54 serves as a holding surface 54 a that holds the second surface 21 b side of the protective member 21 attached to the wafer 11.

工作台54的上方配置有噴射噴嘴56。此噴射噴嘴56是構成為例如可相對於保持晶圓11的工作台54移動，而在晶圓11的背面11b的任意的區域噴射液狀晶粒接合用接著劑23。 A spray nozzle 56 is arranged above the table 54. This spray nozzle 56 is configured to be movable relative to the table 54 holding the wafer 11, for example, and spray the liquid crystal bonding agent 23 in an arbitrary area on the back surface 11 b of the wafer 11.

在變形例的接著劑塗佈步驟中，首先，是以使被貼附在晶圓11上的保護構件21的第2面21b接觸於工作台54的保持面54a的方式，將晶圓11以及保護構件21載置在工作台54上。藉此，晶圓11會以背面11b側露出於上方的狀態被保持於工作台54。 In the adhesive application step of the modification, first, the wafer 11 and the wafer 11 are attached so that the second surface 21 b of the protective member 21 attached to the wafer 11 contacts the holding surface 54 a of the table 54. The protection member 21 is placed on the table 54. As a result, the wafer 11 is held on the table 54 with the back surface 11b side exposed upward.

其次，使噴射噴嘴56在任意的元件晶片17的上方移動，並使其噴射液狀晶粒接合用接著劑23。再者，液狀晶粒接合用接著劑23的噴射區域，也可限定在將晶圓11(元件晶片17)的溝15除外的區域。當重覆進行噴射噴嘴56的移動與液狀晶粒接合用接著劑23的噴射，而將液狀晶粒接合用接著劑23塗佈在所有的元件晶片17上時，變形例的接著劑塗佈步驟即結束。 Next, the spray nozzle 56 is moved over any element wafer 17 and sprays the adhesive 23 for liquid crystal grain bonding. In addition, the injection region of the liquid crystal bonding agent 23 may be limited to a region excluding the groove 15 of the wafer 11 (element wafer 17). When the movement of the spray nozzle 56 and the spraying of the liquid crystal bonding adhesive 23 are repeated, and the liquid crystal bonding adhesive 23 is applied to all the element wafers 17, the adhesive of the modified example is applied. The cloth step ends.

另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍下，均可適當變更而實施。 In addition, the structure, method, etc. of the above-mentioned embodiment can be implemented with appropriate changes as long as they do not deviate from the scope of the object of the invention.

11‧‧‧晶圓 11‧‧‧ Wafer

11a‧‧‧正面 11a‧‧‧Front

11b‧‧‧背面 11b‧‧‧Back

15‧‧‧溝 15‧‧‧Ditch

17‧‧‧元件晶片 17‧‧‧Component chip

21‧‧‧保護構件 21‧‧‧Protection member

21a‧‧‧第1面 21a‧‧‧The first side

21b‧‧‧第2面 21b‧‧‧The second side

23‧‧‧液狀晶粒接合用接著劑 23‧‧‧ Adhesive for liquid crystal bonding

32‧‧‧噴覆裝置 32‧‧‧Spraying device

34‧‧‧工作夾台 34‧‧‧Work clamping table

34a‧‧‧保持面 34a‧‧‧Keep noodles

36‧‧‧噴霧單元(噴霧器) 36‧‧‧Spray unit (sprayer)

38‧‧‧支撐臂 38‧‧‧support arm

40‧‧‧噴霧噴嘴 40‧‧‧ spray nozzle

A‧‧‧間隔 A‧‧‧Interval

B‧‧‧厚度 B‧‧‧Thickness

Claims (2)

一種元件晶片的製造方法，是從在以複數條分割預定線所劃分出的正面側的各區域中各自具備有元件的晶圓中，製造對應於各元件的複數個元件晶片，該元件晶片的製造方法的特徵在於具備：溝形成步驟，在晶圓的該正面側沿著該分割預定線形成深度相當於該元件晶片的完成厚度的溝；磨削步驟，將保護構件黏貼在晶圓的該正面，並磨削晶圓的背面以使該溝露出於該背面側，而將晶圓分割成一個個的該元件晶片；接著劑塗佈步驟，實施該磨削步驟後，在已分割的晶圓的該背面噴射液狀晶粒接合用接著劑而使該液狀晶粒接合用接著劑不會在相鄰的該元件晶片之間填充且不會到達晶圓的該正面的方式塗佈在晶圓的該背面；及硬化步驟，實施該接著劑塗佈步驟後，使該液狀晶粒接合用接著劑硬化，在該接著劑塗佈步驟中，調整該液狀晶粒接合用接著劑的供給量，使塗佈在晶圓的該背面之該液狀晶粒接合用接著劑的厚度比相鄰的該元件晶片的間隔的一半更小，防止在相鄰的該元件晶片之間該液狀晶粒接合用接著劑彼此的接觸。 A method of manufacturing an element wafer is to manufacture a plurality of element wafers corresponding to each element from wafers each provided with an element in each area on the front side divided by a plurality of predetermined dividing lines, The manufacturing method is characterized by comprising: a groove forming step, forming a groove with a depth corresponding to the completed thickness of the element wafer along the planned dividing line on the front side of the wafer; and a grinding step, attaching a protective member to the wafer Front surface, and grind the back surface of the wafer so that the groove is exposed on the back surface side, and divide the wafer into the element wafers; the adhesive coating step, after performing the grinding step, after the divided crystal The back surface of the round is sprayed with a liquid crystal bonding adhesive so that the liquid crystal bonding adhesive is not filled between adjacent device wafers and does not reach the front surface of the wafer The back surface of the wafer; and a hardening step, after performing the adhesive coating step, the liquid crystal bonding adhesive is hardened, and in the adhesive coating step, the liquid crystal bonding adhesive is adjusted The amount of supply is such that the thickness of the liquid crystal bonding adhesive applied to the back surface of the wafer is smaller than half of the interval between the adjacent element wafers, preventing the gap between adjacent element wafers The adhesives for liquid crystal grain bonding are in contact with each other. 如請求項1之元件晶片的製造方法，其中，在該接著劑 塗佈步驟中，是以噴霧器的噴塗來塗佈該液狀晶粒接合用接著劑。 The method of manufacturing an element wafer according to claim 1, wherein the adhesive In the coating step, the liquid crystal bonding agent is applied by spraying with a sprayer.
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