KR20110055977A - Apartus for manufacturing semiconductor package and method for fabricating semiconductor package by using the same - Google Patents

Abstract

PURPOSE: An apparatus for manufacturing a semiconductor package and a method for fabricating semiconductor package by using the same are provided to prevent damage to a wafer by coating a liquid adhesive on a wafer to form a die adhesive layer. CONSTITUTION: In an apparatus for manufacturing a semiconductor package and a method for fabricating semiconductor package by using the same, a loading unit(110) supplies a wafer from a semiconductor integrated circuit process to a polishing part(120). The polishing part polishes the front and back sides of the wafer to reduce the thickness of the wafer firstly. The etching part(130) chemically-etches the backside of the ground wafer to reduce the thickness of the wafer. A coating part(150) coats a liquid adhesive on the backside of the chemically-etched wafer to form a die adhesive layer.

Description

APARTUS FOR MANUFACTURING SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING SEMICONDUCTOR PACKAGE BY USING THE SAME}

The present invention relates to a semiconductor package, and more particularly, to an apparatus for manufacturing a semiconductor package and a method of manufacturing a semiconductor package using the same.

In general, in the semiconductor integrated circuit manufacturing process for forming a semiconductor integrated circuit on the front surface of the wafer, the wafer introduced into the semiconductor integrated circuit manufacturing process is substantially a semiconductor in order to suppress damage to the wafer generated during movement or handling between devices. Compared to the wafer used in the package manufacturing process, it is manufactured to a considerably thicker thickness. Therefore, after the semiconductor integrated circuit fabrication process, before the semiconductor package fabrication process, the back-lap process is performed to remove the unnecessary back side of the wafer to make the wafer thin.

Generally, wafers have a thickness of 730-750 μm for 8 inches and 790-800 μm for 12 inches. In the wafer backside polishing step, the wafer thickness is thinly processed to 50 µm or less. At this time, the final thickness of the target wafer may vary depending on the type of semiconductor product or the customer's requirements.

Wafer backside grinding processes typically include wafer loading, wafer aligning, rough grinding, fine grinding, polishing, cleaning, and wafer unloading. And so on.

However, in the back polishing process, there are problems such as cell damage due to mechanical grinding action of the polishing wheel, poor handling due to warpage of the wafer, and poor chip adhesion. This problem is more serious as the thickness of the wafer becomes thinner as the semiconductor product becomes thinner and thinner.

Meanwhile, after performing the back surface polishing process, before performing the sawing process, a die attach tape (DAT) is formed on the back surface of the wafer, that is, the polished surface. The die adhesive tape provides adhesive force for mounting the semiconductor chip on the substrate.

However, the die adhesive tape is deformed and stuck after the sawing process, resulting in a defect in which the die adhesive tape is not separated in some areas.

1 is a schematic diagram conceptually illustrating adhesion failure that may occur at the time of die detachment by sticking a conventional die adhesive tape.

Referring to FIG. 1, a sawing process using a blade sawing method or a laser cutting method is integrally cut from the front surface of the wafer 1 through the die adhesive tape 2 to a partial thickness of the base layer 4. In this case, after the adhesive component 3 contained in the die adhesive tape 2 is locally heated and melted along the cutting line, the cut surface of the semiconductor chip 5, the die adhesive tape 2, and the base layer 4 is melted. Can be adhered to. Thus, when the semiconductor chip 5 diced by the vacuum pad 6 and the pick-up needle 7 is separated, the edge portion of the semiconductor chip 5 is separated by the adhesive component 8 stuck in the sawing process. Is disturbed, and tensile stress resulting from the bending of the semiconductor chip 5 is generated. Due to this stress, the semiconductor chip 5 is bent or even the edge portion is broken.

In recent years, since the wafer chip subjected to the backside polishing process has a thin thickness of about 50 μm or less, the problem of warping the wafer and the use of a die adhesive tape are remarkably generated. These problems can lead to die breakage or degrade device performance resulting in lower productivity and product reliability. In addition, since the die adhesive tape is relatively expensive, there is a problem of increasing the manufacturing cost.

An object of the present invention is to provide an apparatus for manufacturing a semiconductor package and a method of manufacturing a semiconductor package using the same, which can prevent cell damage and wafer warpage generated in the process of reducing the thickness of a wafer.

Another object of the present invention is to provide an apparatus for manufacturing a semiconductor package and a method of manufacturing a semiconductor package using the same, which can solve the problem of die failure and manufacturing cost increase due to the use of a die adhesive tape.

According to an aspect of the present invention, an apparatus for manufacturing a semiconductor package includes a loading unit for supplying a wafer having a protective tape attached to a front surface on which a semiconductor integrated circuit is formed, and a rear surface facing the front surface of the wafer to polish the thickness of the wafer. Applying a liquid adhesive on the polishing portion to reduce the thickness of the first wafer by chemically etching the polished back surface of the wafer, and the chemically etched back surface of the wafer, and the chemically etched back surface of the wafer And an unloading part for unloading the wafer.

It characterized in that it further comprises a transfer unit for sequentially transporting the wafer in the loading section, the polishing section, the etching section, the coating section and the unloading section.

The cleaning apparatus may further include a cleaning unit for removing an etching residue on the wafer etched through the etching unit.

And a hardening part for semi-curing the die adhesive layer.

And a tape attaching portion for attaching a dicing tape attached to the wafer ring on the die attaching layer.

Generating a barcode label with a unique number of the wafer further comprises a barcode label attachment portion for attaching the barcode label to the dicing tape.

And a tape removing unit for removing the protective tape attached to the front surface of the wafer.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor package, comprising: a loading step in which a wafer having a protective tape is attached to a front surface on which an integrated circuit is formed; A physical polishing step of reducing the thickness of the wafer, a chemical etching step of chemically etching the polished back surface of the wafer, and a second reduction of the thickness of the wafer, and applying a liquid adhesive to the chemically etched back surface of the wafer, And forming a die adhesion layer, and an unloading step of unloading the wafer.

After the chemical etching step, it is characterized in that it further comprises an etching residue removal step of removing the etching residue on the wafer.

After the die adhesion layer forming step, the die adhesion layer semi-curing step of semi-curing the die adhesive layer is characterized in that it further comprises.

After the die adhesion layer forming step, further comprising a dicing tape attaching step of attaching a dicing tape attached to the wafer ring on the die adhesive layer.

After the dicing tape attaching step, the method further comprises a barcode label attaching step of generating a barcode label with the unique number of the wafer and attaching it to the dicing tape.

After the die adhesive layer forming step, and further comprising a protective tape removing step of removing the protective tape attached to the front surface of the wafer.

According to the present invention, since the physical polishing process and the chemical etching process can be continuously processed to reduce the thickness of the wafer, the warpage of the wafer and die failure can be prevented. In addition, by applying a liquid adhesive to the wafer to form a die adhesive layer for die bonding, it is possible to prevent damage to the wafer due to the sticking of the conventional die attach tape, and to replace the expensive die attach tape to reduce the manufacturing cost. have.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic block diagram illustrating a device for manufacturing a semiconductor package according to an exemplary embodiment of the present invention, and FIGS. 3A to 3J are diagrams illustrating process steps to illustrate a method of manufacturing a semiconductor package according to an exemplary embodiment of the present invention. One schematic cross section.

Hereinafter, the configuration of the semiconductor package manufacturing equipment 10 according to the embodiment of the present invention will be described in detail in connection with the semiconductor package manufacturing method.

First, referring to FIG. 2, the semiconductor package manufacturing equipment 10 includes a loading unit 110, a polishing unit 120, an etching unit 130, a coating unit 150, an unloading unit 200, and a transfer unit. And 210.

In addition, the cleaning unit 140 may further include at least one of the curing unit 160, the tape attaching unit 170, the tape removing unit 180, and the barcode label attaching unit 190.

Each component part of the above-described semiconductor package manufacturing equipment 10 may be implemented as one device.

2, 3A, and 3B, the loading unit 110 is a portion for supplying the wafer 100A, which has completed the semiconductor integrated circuit process, to the polishing unit 120, and includes a wafer cassette having the wafer 100A loaded therein ( a wafer casset 111 and an alignment table 112 on which the wafer 100A supplied from the wafer cassette 111 is mounted and aligned.

After the semiconductor integrated circuit process, the wafer 100A may have a thickness of about 730 to 800 μm.

The transfer unit 210 transfers the wafer 100A from the wafer cassette 111 to the alignment table 112, or transfers the wafer 100A positioned on the alignment table 112 to the polishing unit 120.

In this case, a protective tape 102 is attached to the front surface B of the wafer 100 on which the semiconductor integrated circuit is formed, and the transfer unit 210 has a rear surface A facing the front surface B of the wafer 100. The wafer 100A is supplied to the polishing unit 120 so as to face upward. The protective tape 102 is temporarily attached to protect the semiconductor integrated circuit formed on the wafer front surface B, and it is preferable to use an ultraviolet tape that can be easily removed.

2, 3C, and 3D, the polishing unit 120 physically polishes the back surface A of the wafer 100A to primarily reduce the thickness of the wafer 100A.

Back polishing in the polishing unit 120 may be performed such that the thickness of the wafer 100E is 100 μm or less.

The polishing unit 120 includes a turn table 121 and four chuck tables 122A, 122B, 122C, and 122D installed thereon, and on top of at least one chuck table 122A, 122B, 122C, and 122D. Each of the polishing wheels 123A, 123B, and 123C is installed to perform a polishing process. The positions of the chuck tables 122A, 122B, 122C, and 122D are continuously changed by the rotation of the turn table 121, and the wafers 100B, 100C, 100D, and 100E are fixed by vacuum suction.

For convenience, the chuck tables 122A, 122B, 122C, and 122D are called first to fourth chuck tables in the order of processing.

The chuck tables 122A, 122B, 122C, and 122D are radially installed on the top of the turn table 121. The turn table 121 is rotated so that any chuck tables 122A, 122B, 122C, and 122D can be rotated and positioned at neighboring chuck tables 122A, 122B, 122C, and 122D. Accordingly, the chuck tables 122A, 122B, 122C, and 122D are rotated in the clockwise direction by the turn table 121 to collectively perform the backside polishing process.

The first chuck table 122A is a waiting table on which the wafer 100A inserted into the polishing unit 120 waits. The second to fourth chuck tables 122B, 122C, and 122D are polishing tables through which a polishing process is performed on the wafer 100A, and polishing wheels 123A, 123B, and 123C are respectively provided on the upper side thereof. The second chuck table 122B performs a roughing step of roughly polishing the rear surface of the wafer 100B using the rough polishing wheel 123A. The third chuck table 122C performs a finishing step of precisely polishing the back surface of the wafer 100C using the fine polishing wheel 123B. The fourth chuck table 122D performs a polishing step and a cleaning step of mirror-mirroring the back surface of the wafer 100D using the slurry and the polishing pad 123C. Then, the wafer 100E on which backside polishing is completed is placed on the first chuck table 122A.

The transfer unit 210 transfers the wafer 100E on the first chuck table 122A on which the backside polishing is completed to the etching unit 130.

Referring to FIGS. 2 and 3E, the etching unit 130 chemically etches the back surface A of the wafer 100E to secondly reduce the thickness of the wafer 100E, and finally has a target thickness. The wafer 100F is formed.

Chemical etching in the etching unit 130 may be performed such that the thickness of the wafer 100F is 50 μm or less.

The etching unit 130 includes an injection nozzle 131 for supplying the etching solution 132, and supplies the etching solution 132 to the polished back surface A of the wafer 100E by using the injection nozzle 131. By chemically etching the back surface A of the wafer 100E.

The etching solution 132 etches the back surface A of the wafer 100E while chemically reacting with the silicon component of the wafer 100E. For example, the etching solution 132 may be a solution obtained by diluting nitric acid (HNO ₃ ) and hydrofluoric acid (HF) in water or acetic acid (CH ₃ COOH).

Meanwhile, in order to maintain the precision of etching, the etching step may be divided into several steps, and each step may be performed by changing the etching rate by changing the composition of the etching solution 132.

The transfer unit 210 transfers the wafer 100F having the backside etching completed from the etching unit 130 to the coating unit 150.

Referring to FIGS. 2 and 3G, the coating part 150 includes a nozzle 151 for applying the liquid adhesive 152 to the etched back surface A of the wafer 100F using the nozzle 151. The liquid adhesive 152 is applied to form a die adhesive layer 152A.

As the liquid adhesive 152, for example, epoxy may be used.

The method of applying the liquid adhesive 152 may be, for example, spin coating, spray coating or line coating. According to the application method described above, the coating unit 150 may apply the liquid adhesive 152 while rotating the wafer 100F.

Meanwhile, the wafer 100F may pass through the cleaning unit 140 before being transferred from the etching unit 130 to the coating unit 150.

In this case, the transfer unit 210 sequentially transfers the wafer 100F in order from the etching unit 130 to the coating unit 150 via the cleaning unit 140.

2 and 3F, the cleaning unit 140 removes the etching residue including the etching solution 132 buried in the wafer 100F.

The transfer unit 210 transfers the wafer 100F having the die adhesive layer 152A formed on the rear surface A to the unloading unit 200 through the coating unit 150.

The unloading unit 200 unloads the wafer 100F from the semiconductor manufacturing equipment 10 to the outside thereof. Unloading transfers the wafer 100F to a subsequent process followed by mounting on a conventional wafer cassette.

Meanwhile, the wafer 100F may further pass through the hardening part 160 before being transferred from the coating part 150 to the unloading part 200.

In this case, the transfer unit 210 sequentially transfers the wafer 100F in order from the coating unit 150 to the unloading unit 200 via the curing unit 160.

2 and 3H, the process in the curing unit 160 is an optional process and may not be performed depending on the properties of the liquid adhesive 152 and the properties of the desired die adhesive layer.

The hardening unit 160 may semi-curve the die adhesion layer 152A in the curing chamber 161 to form a semi-cured die adhesion layer 152B. The semi-hardening process is to remove the solvent contained in the liquid adhesive to semi-harden the die adhesion layer 152A and thus enable the subsequent dicing tape attaching process and the dicing process.

In addition, the wafer 100F may further pass through the tape attaching unit 170 before being transferred from the coating unit 150 to the unloading unit 200.

The wafer 100F is preferably passed through the hardening unit 160 before being transferred from the coating unit 150 to the tape attachment unit 170. In this case, the transfer unit 210 sequentially transfers the wafer 100F from the coating unit 150 to the unloading unit 200 via the curing unit 160 and the tape attaching unit 170.

2 and 3I, the tape attaching portion 170 attaches a dicing tape 171 attached to the wafer ring 172 on the semi-cured die attach layer 152B.

In the subsequent dicing process, the dicing tape 171 is clearly separated, including the die bonding layer 152B in which the individual dies are semi-finished, and at the same time, the stage or the like below thereof is not damaged by the saw. To be attached. The dicing tape 171 may be made of the same material as the protective tape 102 described above.

Meanwhile, the wafer 100F may further pass through the tape removing unit 180 before being transferred from the coating unit 150 to the unloading unit 200.

The wafer 100F is preferably passed through the curing unit 160 and the tape attaching unit 170 before being transferred from the coating unit 150 to the tape removing unit 180. In this case, the transfer unit 210 sequentially transfers the wafer 100F from the coating unit 150 to the unloading unit 200 via the curing unit 160, the tape attaching unit 170, and the tape removing unit 180. Transfer to.

2 and 3J, the tape removing unit 180 irradiates ultraviolet rays to the protective tape 102 attached to the front surface (B) of the wafer 100F to reduce the adhesive force of the protective tape 102 ( And a tape remover (not shown) for peeling off the adhesive tape having a low adhesive force from the front surface B of the wafer 100F. The tape remover may attach the removal adhesive tape 181 to the protection tape 102 irradiated with ultraviolet rays, and then peel off the protection tape 102 from the front surface B of the wafer by collecting the adhesive tape 181. .

The wafer 100F may further pass through the barcode label attaching portion 190 before being transferred from the tape attaching portion 170 to the unloading portion 200.

The wafer 100F is preferably passed through the tape removing unit 180 before being transferred from the tape attaching unit 170 to the barcode label attaching unit 190. In this case, the transfer unit 210 sequentially transfers the wafer 100F from the tape attaching unit 170 to the unloading unit 200 via the tape removing unit 180 and the barcode label attaching unit 190.

The barcode label attaching unit 190 reads an OCR indicating the unique number of the wafer 100F, converts the barcode into a barcode label, generates a barcode label, and attaches the barcode label to the dicing tape 171.

Thereafter, the wafer 100F transferred to the subsequent process through the unloading part 200 is cut together with the die adhesive layer 152B. The cut semiconductor chips are then separated from the dicing tape and individualized and then fabricated into semiconductor packages using conventional subsequent packaging processes such as die attach.

As described in detail above, the physical polishing process and the chemical etching process for reducing the thickness of the wafer may be continuously processed to prevent warpage and die failure of the wafer.

In addition, by applying a liquid adhesive to the wafer for die bonding to form an adhesive layer, it is possible to prevent damage to the wafer due to the sticking of the conventional die attach tape, and to replace the expensive die attach tape to reduce the manufacturing cost. .

In the detailed description of the present invention described above with reference to the embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge in the scope of the present invention described in the claims and It will be appreciated that various modifications and variations can be made in the present invention without departing from the scope of the art.

1 is a schematic diagram conceptually illustrating adhesion failure that may occur at the time of die detachment by sticking a conventional die adhesive tape.

Figure 2 is a schematic block diagram equipped with equipment for manufacturing a semiconductor package according to an embodiment of the present invention.

3A to 3J are schematic cross-sectional views illustrating process steps in order to explain a method of manufacturing a semiconductor package according to an embodiment of the present invention.

Claims (13)

A loading unit supplying a wafer having a protective tape attached to a front surface on which a semiconductor integrated circuit is formed; A polishing unit for grinding the rear surface opposite to the front surface of the wafer to primarily reduce the thickness of the wafer; Etching to chemically etch the polished back surface of the wafer to reduce the thickness of the wafer secondly; A coating part for forming a die adhesive layer by applying a liquid adhesive to the chemically etched back surface of the wafer; and An unloading unit which unloads the wafer; Equipment for manufacturing a semiconductor package comprising a. The method of claim 1, And a transfer unit for sequentially transferring the wafers in order of the loading part, the polishing part, the etching part, the coating part and the unloading part. The method of claim 1, Equipment for manufacturing a semiconductor package, characterized in that further comprising a cleaning unit for removing the etching residue on the wafer etched through the etching portion. The method of claim 1, And a hardening portion for semi-curing the die adhesive layer. The method of claim 1, And a tape attaching portion for attaching a dicing tape attached to the wafer ring on the die attaching layer. The method of claim 5, Equipment for manufacturing a semiconductor package, characterized in that for generating a barcode label with a unique number of the wafer to attach the barcode label on the dicing tape. The method of claim 1, And a tape remover for removing the protective tape attached to the front surface of the wafer. A loading step of loading a wafer having a protective tape attached to a front surface of the integrated circuit; A physical polishing step of grinding the back surface opposite the front surface of the wafer to reduce the thickness of the wafer primarily; Chemically etching the polished back surface of the wafer to secondly reduce the thickness of the wafer; Forming a die adhesive layer by applying a liquid adhesive to the chemically etched back surface of the wafer; And An unloading step of unloading the wafer; Semiconductor package manufacturing method comprising a. The method of claim 8, After the chemical etching step, The semiconductor package manufacturing method further comprises an etching residue removing step of removing the etching residue on the wafer. The method of claim 8, After the die adhesive layer forming step, And semi-curing the die adhesion layer to semi-cur the die adhesion layer. The method of claim 8, After the die adhesive layer forming step, And a dicing tape attaching step of attaching a dicing tape attached to the wafer ring on the die attaching layer. The method of claim 11, After the dicing tape attaching step, And a barcode label attaching step of generating a barcode label with a unique number of the wafer and attaching the barcode label to the dicing tape. The method of claim 8, After the die adhesive layer forming step, And a protective tape removing step of removing the protective tape attached to the front surface of the wafer.

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