TW201709301A - Method of manufacturing device chip capable of reducing time required for forming the adhesive layer since there is unnecessary of cutting off the adhesive layer via laser - Google Patents
Method of manufacturing device chip capable of reducing time required for forming the adhesive layer since there is unnecessary of cutting off the adhesive layer via laser Download PDFInfo
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- TW201709301A TW201709301A TW105105708A TW105105708A TW201709301A TW 201709301 A TW201709301 A TW 201709301A TW 105105708 A TW105105708 A TW 105105708A TW 105105708 A TW105105708 A TW 105105708A TW 201709301 A TW201709301 A TW 201709301A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Abstract
Description
本發明是有關於將具備有複數個元件的晶圓分割，以製造對應於各個元件的元件晶片之製造方法。 The present invention relates to a method of manufacturing a wafer having a plurality of elements divided to manufacture an element wafer corresponding to each element.
正面側形成有複數個元件的晶圓是例如以切削刀片沿著分割預定線(切割道(street))被切削，而被分割成複數個對應於各元件的元件晶片。為了將此元件晶片固定於其他的基板等上，會在元件晶片的背面側設置固定用的接著層。 The wafer on which the plurality of elements are formed on the front side is, for example, cut by a cutting blade along a dividing line (street), and is divided into a plurality of element wafers corresponding to the respective elements. In order to fix the element wafer to another substrate or the like, an adhesive layer for fixing is provided on the back side of the element wafer.
藉由使設置於背面側的接著層緊貼在固定對象之基板等上，並施加熱或光線等外在的刺激，可以使接著層硬化以固定元件晶片。作為接著層，所使用的是例如稱為晶粒接合膜(DAF：Die Attach Film)等的晶粒接合用的薄膜狀接著劑。 By adhering the adhesive layer provided on the back side to the substrate or the like to be fixed, and applying external stimuli such as heat or light, the adhesive layer can be hardened to fix the element wafer. As the adhesive layer, for example, a film-like adhesive for die bonding such as a die bonding film (DAF: Die Attach Film) is used.
此薄膜狀接著劑是形成為可將晶圓的整個背面覆蓋的大小，並被貼附於例如分割前的晶圓的背面。藉由將薄膜狀接著劑貼附於晶圓的背面後，再將此薄膜狀接著劑與晶圓一起分割，就能夠製造背面側具備有接著層的元 件晶片(參照例如專利文獻1)。 The film-like adhesive is formed to have a size that covers the entire back surface of the wafer, and is attached to, for example, the back surface of the wafer before the division. By attaching the film-like adhesive to the back surface of the wafer and then dividing the film-like adhesive together with the wafer, it is possible to manufacture a member having an adhesive layer on the back side. A wafer (see, for example, Patent Document 1).
但是，由於上述之薄膜狀接著劑是柔軟的，因此，當以工作夾台等保持晶圓的背面側(薄膜狀接著劑側)來切削晶圓的正面側時，尤其是在成為切削刀片的切除側的晶圓背面側上，元件晶片容易形成缺陷。 However, since the above-mentioned film-like adhesive is soft, when the front side of the wafer is cut on the back side (film-like adhesive side) of the wafer by a work chuck or the like, especially when it is a cutting insert. On the back side of the wafer on the cut side, the element wafer is liable to form defects.
於是，已有下列的元件晶片的製造方法被提出：於將晶圓的正面側半切割後再磨削背面側來分割成複數個元件晶片的DBG(Dicing Before Grinding)之後，才將薄膜狀接著劑貼附到背面側(參照例如專利文獻2)。在此製造方法中，是藉由雷射光線將在晶圓的背面側所貼附的薄膜狀接著劑切斷。 Therefore, the following method for manufacturing an element wafer has been proposed: after the front side of the wafer is half-cut and then the back side is ground to be divided into DBG (Dicing Before Grinding) of a plurality of element wafers, the film is formed. The agent is attached to the back side (see, for example, Patent Document 2). In this manufacturing method, the film-like adhesive attached to the back side of the wafer is cut by laser light.
專利文獻1：日本專利特開2000-182995號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2000-182995
專利文獻2：日本專利特開2005-19525號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2005-19525
不過，在此方法中，在貼附薄膜狀接著劑的階段中，由於晶圓已被分割成元件晶片，因此在貼附薄膜狀接著劑的製程及搬送晶圓的製程等中，元件晶片彼此的間隔會容易發生改變。藉此，會有導致以元件晶片的間隔所規定的分割預定線蛇行彎曲，而變得並非直線的狀況。 However, in this method, since the wafer has been divided into the element wafers at the stage of attaching the film-like adhesive, the element wafers are mutually in the process of attaching the film-like adhesive and the process of transferring the wafer. The interval will be easy to change. As a result, there is a case where the predetermined dividing line defined by the interval of the element wafer is meandered and curved, and the line is not straight.
為此，以此方法將薄膜狀接著劑切斷時，必須對 晶圓的每條分割預定線重新調整雷射光線的照射位置。尤其是在元件晶片較小的情況下(例如，5mm角以下)，分割預定線的數量變多，在加工上需要花費較長的時間。 For this reason, when the film-like adhesive is cut in this way, it must be Each of the dividing lines of the wafer re-adjusts the irradiation position of the laser light. In particular, in the case where the element wafer is small (for example, 5 mm or less), the number of division lines is increased, and it takes a long time to process.
本發明是有鑒於所述問題點而作成的發明，其目的在於提供一種縮短接著層的形成所需的時間之元件晶片的製造方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a method for manufacturing an element wafer which shortens the time required for formation of an adhesive layer.
根據本發明所提供的元件晶片的製造方法，是從在以複數條分割預定線所劃分出的正面側的各區域中各自具備有元件的晶圓中，製造對應於各元件的複數個元件晶片的元件晶片的製造方法，其特徵在於具備：溝形成步驟，在晶圓的該正面側沿著該分割預定線形成深度相當於該元件晶片的完成厚度的溝；磨削步驟，將保護構件黏貼在晶圓的該正面，並磨削晶圓的背面以使該溝露出於該背面側，而將晶圓分割成一個個的該元件晶片；接著劑塗佈步驟，實施該磨削步驟後，將液狀晶粒接合用接著劑噴射而塗佈在已分割的晶圓的該背面；及硬化步驟，實施該接著劑塗佈步驟實施後，使該液狀晶粒接合用接著劑硬化。 According to the method of manufacturing an element wafer according to the present invention, a plurality of element wafers corresponding to the respective elements are manufactured from wafers each having an element on each of the front side sides divided by a plurality of predetermined lines. A method of manufacturing a device wafer, comprising: a trench forming step of forming a trench having a depth corresponding to a completed thickness of the device wafer along the predetermined dividing line on the front side of the wafer; and a grinding step of adhering the protective member On the front side of the wafer, grinding the back surface of the wafer to expose the trench on the back side, and dividing the wafer into individual component wafers; an adhesive coating step, after performing the grinding step, The liquid crystal grain bonding adhesive is sprayed onto the back surface of the divided wafer; and the curing step is performed, and after the adhesive application step is performed, the liquid crystal grain bonding adhesive is cured.
在本發明中，在該接著劑塗佈步驟中，也可以藉由噴霧器的噴塗來塗佈該液狀晶粒接合用接著劑。 In the present invention, in the adhesive application step, the liquid crystal grain bonding adhesive may be applied by spraying by a spray.
在本發明的元件晶片的製造方法中，由於是在將 溝形成在晶圓的正面側，並磨削背面而將晶圓分割成元件晶片後，將液狀晶粒接合用接著劑噴射而塗佈在晶圓的背面，因此，可以藉由使此液狀晶粒接合用接著劑硬化，而在各元件晶片上形成接著層。亦即，在本發明的元件晶片的製造方法中，由於沒有以雷射光線等將接著層切斷的必要，因此能縮短接著層的形成所需要的時間。 In the method of manufacturing the element wafer of the present invention, since The groove is formed on the front side of the wafer, and the back surface is ground to divide the wafer into element wafers, and then the liquid crystal die bonding adhesive is sprayed and applied on the back surface of the wafer. Therefore, the liquid can be formed by the liquid. The die bonding is hardened with an adhesive to form an adhesive layer on each of the element wafers. That is, in the method of manufacturing an element wafer of the present invention, since it is not necessary to cut the adhesive layer by laser light or the like, the time required for the formation of the adhesive layer can be shortened.
2‧‧‧切削裝置 2‧‧‧Cutting device
4、14、34‧‧‧工作夾台 4,14,34‧‧‧Working table
6‧‧‧切削單元 6‧‧‧Cutting unit
8‧‧‧主軸殼體 8‧‧‧ spindle housing
10‧‧‧切削刀片 10‧‧‧Cutting inserts
11‧‧‧晶圓 11‧‧‧ wafer
11a‧‧‧正面 11a‧‧‧ positive
11b‧‧‧背面 11b‧‧‧Back
12‧‧‧磨削裝置 12‧‧‧ grinding device
13‧‧‧元件 13‧‧‧ components
14a、34a、44a、54a‧‧‧保持面 14a, 34a, 44a, 54a‧‧‧
15‧‧‧溝 15‧‧‧ditch
16‧‧‧磨削單元 16‧‧‧ grinding unit
17‧‧‧元件晶片 17‧‧‧Component chip
18‧‧‧主軸殼體 18‧‧‧ spindle housing
20‧‧‧主軸 20‧‧‧ Spindle
21‧‧‧保護構件 21‧‧‧Protection components
21a‧‧‧第1面 21a‧‧‧1st
21b‧‧‧第2面 21b‧‧‧2nd
22‧‧‧輪座 22‧‧‧ wheel seat
23‧‧‧液狀晶粒接合用接著劑 23‧‧‧Liquid for die bonding
24‧‧‧磨削輪 24‧‧‧ grinding wheel
26‧‧‧輪基台 26‧‧‧ wheel base
28‧‧‧磨削砥石 28‧‧‧ grinding diamonds
32‧‧‧噴覆裝置 32‧‧‧Spray device
36‧‧‧噴霧單元(噴霧器) 36‧‧‧Spray unit (sprayer)
38‧‧‧支撐臂 38‧‧‧Support arm
40‧‧‧噴霧噴嘴 40‧‧‧ spray nozzle
42‧‧‧硬化裝置 42‧‧‧ Hardening device
44、54‧‧‧工作台 44, 54‧‧‧ workbench
46‧‧‧光源 46‧‧‧Light source
52‧‧‧噴射裝置 52‧‧‧Spray device
56‧‧‧噴射噴嘴 56‧‧‧jet nozzle
A‧‧‧間隔 A‧‧‧ interval
B‧‧‧厚度 B‧‧‧thickness
圖1是示意地顯示溝形成步驟的立體圖。 Fig. 1 is a perspective view schematically showing a groove forming step.
圖2是示意地顯示在磨削步驟中將保護構件貼附於晶圓上之情形的立體圖。 Fig. 2 is a perspective view schematically showing a state in which a protective member is attached to a wafer in a grinding step.
圖3(A)及圖3(B)是示意地顯示在磨削步驟中晶圓被磨削之情形的側面圖。 3(A) and 3(B) are side views schematically showing a state in which the wafer is ground in the grinding step.
圖4(A)是示意地顯示接著劑塗佈步驟的局部剖面側面圖，圖4(B)是將圖4(A)的一部分放大顯示的圖。 4(A) is a partial cross-sectional side view schematically showing an adhesive application step, and FIG. 4(B) is an enlarged view showing a part of FIG. 4(A).
圖5是示意地顯示硬化步驟的局部剖面側面圖。 Fig. 5 is a partial cross-sectional side view schematically showing a hardening step.
圖6是示意地顯示變形例的接著劑塗佈步驟的局部剖面側面圖。 Fig. 6 is a partial cross-sectional side view schematically showing an adhesive application step of a modification.
以下，參照附圖說明本發明的實施形態。本實施形態的元件晶片的製造方法包含溝形成步驟(參照圖1)、磨削步驟(參照圖2、圖3(A)以及圖3(B))、接著劑塗佈步驟(參照圖4(A)以及圖4(B))以及硬化步驟(參照圖5)。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The method for manufacturing an element wafer according to the present embodiment includes a groove forming step (see FIG. 1), a grinding step (see FIGS. 2, 3(A), and 3(B)), and an adhesive application step (see FIG. 4 (see FIG. 4). A) and Fig. 4(B)) and the hardening step (see Fig. 5).
在溝形成步驟中，是在晶圓的正面側形成沿著分 割預定線之溝。在磨削步驟中，是藉由將保護構件貼附在晶圓的正面並磨削背面，以使溝露出於背面側而將晶圓分割成元件晶片。在接著劑塗佈步驟中，是將液狀晶粒接合用接著劑噴射而塗佈在晶圓的背面。在硬化步驟中，是使所塗佈的液狀晶粒接合用接著劑硬化。以下，詳細敘述本實施形態的元件晶片的製造方法。 In the trench forming step, a step along the front side of the wafer is formed. Cut the groove of the line. In the grinding step, the wafer is divided into the element wafer by attaching the protective member to the front surface of the wafer and grinding the back surface so that the groove is exposed on the back side. In the adhesive application step, the liquid crystal grain bonding adhesive is sprayed and applied to the back surface of the wafer. In the hardening step, the applied liquid crystal grain bonding adhesive is cured. Hereinafter, a method of manufacturing the element wafer of the present embodiment will be described in detail.
首先，實施在晶圓的正面側形成沿著分割預定線的溝的溝形成步驟。圖1是示意地顯示溝形成步驟的立體圖。如圖1所示，本實施形態的晶圓11是例如由矽等半導體材料形成的圓板，並將其正面11a側區分成中央的元件區域、與包圍元件區域的外周剩餘區域。 First, a groove forming step of forming a groove along a predetermined dividing line on the front side of the wafer is performed. Fig. 1 is a perspective view schematically showing a groove forming step. As shown in FIG. 1, the wafer 11 of the present embodiment is a disk formed of, for example, a semiconductor material such as tantalum, and the front surface 11a side is divided into a central element region and a peripheral remaining region surrounding the element region.
元件區域是以排列成格子狀的複數條分割預定線(切割道)進一步劃分成複數個區域，且在各個區域中形成有IC、LSI等元件13。再者，在本實施形態中，雖然將由矽等半導體材料形成的圓板作為晶圓11使用，但晶圓11的材質、形狀等並無限制。例如，也可以將由陶瓷、樹脂、金屬等之材料所形成之板作為晶圓11來使用。 The element region is further divided into a plurality of regions by a plurality of predetermined dividing lines (cutting streets) arranged in a lattice shape, and elements 13 such as ICs and LSIs are formed in the respective regions. Further, in the present embodiment, a disk formed of a semiconductor material such as germanium is used as the wafer 11, but the material, shape, and the like of the wafer 11 are not limited. For example, a plate made of a material such as ceramics, resin, or metal may be used as the wafer 11.
本實施形態的溝形成步驟是以例如圖1所示的切削裝置2實施。切削裝置2具備有吸引、保持晶圓11的背面11b側的工作夾台4。工作夾台4被連結在包含馬達等的旋轉機構(圖未示)，並以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。此外，在工作夾台4的下方設置有移動機構(圖未示)，工作夾台4是藉由此移動機構而在水平方向上移動。 The groove forming step of this embodiment is carried out, for example, by the cutting device 2 shown in Fig. 1 . The cutting device 2 is provided with a work chuck 4 that sucks and holds the back surface 11b side of the wafer 11. The work chuck 4 is coupled to a rotating mechanism (not shown) including a motor or the like, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a moving mechanism (not shown) is disposed below the work chuck 4, and the work chuck 4 is moved in the horizontal direction by the moving mechanism.
工作夾台4的上表面成為吸引、保持晶圓11的背 面11b側的保持面。在此保持面上，是通過形成於工作夾台4的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用以吸引晶圓11的吸引力。 The upper surface of the work chuck 4 serves to attract and hold the back of the wafer 11. The holding surface on the side of the surface 11b. On this holding surface, a suction force (not shown) formed in the inside of the work chuck 4 or the like causes a suction force (not shown) to act as a suction force to attract the attraction force of the wafer 11.
工作夾台4的上方配置有切削單元6。切削單元6具備有受到升降機構(圖未示)所支撐的主軸殼體8。在主軸殼體8的內部收容有被連結到包含馬達等的旋轉機構(圖未示)的主軸(圖未示)。 A cutting unit 6 is disposed above the work chuck 4 . The cutting unit 6 is provided with a spindle housing 8 supported by a lifting mechanism (not shown). A spindle (not shown) that is coupled to a rotating mechanism (not shown) including a motor or the like is housed inside the spindle housing 8.
主軸是藉由從旋轉機構所傳達的旋轉力而以繞著大致平行於水平方向的旋轉軸的方式旋轉，且藉由升降機構而與主軸殼體8一起升降。又，主軸的一端部露出於主軸殼體8的外部。此主軸的一端部裝設有圓環狀的切削刀片10。 The main shaft is rotated about a rotation axis substantially parallel to the horizontal direction by a rotational force transmitted from the rotation mechanism, and is lifted and lowered together with the spindle housing 8 by the elevating mechanism. Further, one end portion of the main shaft is exposed to the outside of the spindle housing 8. An annular cutting insert 10 is mounted on one end of the main shaft.
在溝形成步驟中，首先，是使晶圓11的背面11b接觸於工作夾台4的保持面，並使吸引源的負壓作用。藉此，晶圓11會以正面11a露出於上方的狀態被吸引、保持在工作夾台4上。 In the groove forming step, first, the back surface 11b of the wafer 11 is brought into contact with the holding surface of the work chuck 4, and the negative pressure of the suction source acts. Thereby, the wafer 11 is attracted and held on the work chuck 4 with the front surface 11a exposed upward.
其次，使工作夾台4與切削刀片10相對地移動、旋轉，將切削刀片10對準於與加工對象的分割預定線對應的位置。之後，讓已使其旋轉的切削刀片10下降至相當於元件晶片的完成厚度的高度，並使工作夾台4在與加工對象的分割預定線平行的方向上移動。 Next, the work chuck 4 is moved and rotated relative to the cutting insert 10, and the cutting insert 10 is aligned at a position corresponding to the planned dividing line of the machining target. Thereafter, the cutting insert 10 that has been rotated is lowered to a height corresponding to the completed thickness of the element wafer, and the work chuck 4 is moved in a direction parallel to the planned dividing line of the processing object.
藉此，沿著加工對象的分割預定線切削晶圓11的正面11a側，而可以形成深度相當於元件晶片的完成厚度的溝15。當重覆進行此工序，而沿著全部的分割預定線形 成溝15後，溝形成步驟即結束。 Thereby, the front surface 11a side of the wafer 11 is cut along the planned dividing line of the processing target, and the groove 15 having a depth corresponding to the completed thickness of the element wafer can be formed. When repeating this process, the line shape along all the divisions is planned. After the groove 15 is formed, the groove forming step ends.
再者，在本實施形態中，是在相鄰的元件晶片之間，形成不充填後述的液狀晶粒接合用接著劑的寬度較窄的溝15(亦即，使用較薄的切削刀片10)。不過，溝15的寬度(切削刀片10的厚度)並沒有限制，可任意設定、變更。 Further, in the present embodiment, a groove 15 having a narrow width which is not filled with a liquid crystal die bonding adhesive to be described later is formed between adjacent element wafers (that is, a thin cutting insert 10 is used. ). However, the width of the groove 15 (the thickness of the cutting insert 10) is not limited and can be arbitrarily set and changed.
於溝形成步驟後，在將保護構件貼附在晶圓11的正面11a之後，實施磨削背面11b的磨削步驟。圖2是示意地顯示在磨削步驟中將保護構件貼附於晶圓11上之情形的立體圖，圖3(A)以及圖3(B)是示意地顯示在磨削步驟中晶圓11被磨削之情形的側面圖。 After the groove forming step, after the protective member is attached to the front surface 11a of the wafer 11, a grinding step of grinding the back surface 11b is performed. 2 is a perspective view schematically showing a state in which a protective member is attached to a wafer 11 in a grinding step, and FIGS. 3(A) and 3(B) are schematic views showing that the wafer 11 is subjected to a grinding step. Side view of the situation of grinding.
在磨削步驟中，首先，如圖2所示，是將保護構件21貼附在晶圓11的正面11a上。保護構件21是例如與晶圓11大致相同形狀的黏著膠帶、樹脂基板、與晶圓11同種或異種的晶圓等。在本實施形態中，是使此保護構件21的第1面21a與晶圓11的正面11a接觸，以將保護構件21貼附在晶圓11上。藉此，能防止由磨削時所施加的荷重等引起的元件13的破損。 In the grinding step, first, as shown in FIG. 2, the protective member 21 is attached to the front surface 11a of the wafer 11. The protective member 21 is, for example, an adhesive tape having substantially the same shape as the wafer 11 , a resin substrate, a wafer of the same kind or different type as the wafer 11 , or the like. In the present embodiment, the first surface 21a of the protective member 21 is brought into contact with the front surface 11a of the wafer 11, and the protective member 21 is attached to the wafer 11. Thereby, damage of the element 13 due to the load applied during grinding or the like can be prevented.
將保護構件21貼附在晶圓11的正面11a後，會磨削晶圓11的背面11b。晶圓11的磨削是以例如圖3(A)以及圖3(B)所示的磨削裝置12實施。磨削裝置12具備有吸引、保持晶圓11的工作夾台14。 After the protective member 21 is attached to the front surface 11a of the wafer 11, the back surface 11b of the wafer 11 is ground. The grinding of the wafer 11 is performed by, for example, the grinding device 12 shown in Figs. 3(A) and 3(B). The grinding device 12 is provided with a work chuck 14 that sucks and holds the wafer 11 .
工作夾台14被連結於包含馬達等之旋轉機構(圖未示)，並以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。又，工作夾台14的下方設置有移動機構(圖未示)，工作夾台 14是藉此移動機構而在水平方向上移動。 The work chuck 14 is coupled to a rotating mechanism (not shown) including a motor or the like, and is rotated about a rotation axis substantially parallel to the vertical direction. Moreover, a moving mechanism (not shown) is disposed below the work clamping table 14 14 is moved in the horizontal direction by this moving mechanism.
工作夾台14的上表面成為吸引、保持被貼附在晶圓11上的保護構件21的第2面21b側的保持面14a。在此保持面14a上，是通過形成於工作夾台14的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用以吸引晶圓11以及保護構件21的吸引力。 The upper surface of the work chuck 14 serves as a holding surface 14a that sucks and holds the second surface 21b side of the protective member 21 attached to the wafer 11. The holding surface 14a is formed by a negative pressure acting on a suction source (not shown) through a flow path (not shown) formed inside the working chuck 14 to attract the wafer 11 and the protective member. 21 attraction.
工作夾台14的上方配置有磨削單元16。磨削單元16具備被升降機構(圖未示)所支撐的主軸殼體18。主軸殼體18中收容有構成大致平行於鉛直方向的旋轉軸的主軸20。 A grinding unit 16 is disposed above the work chuck 14 . The grinding unit 16 is provided with a spindle housing 18 supported by a lifting mechanism (not shown). A spindle 20 that constitutes a rotation axis substantially parallel to the vertical direction is housed in the spindle housing 18.
主軸20的下端部固定有圓盤狀的輪座22。輪座22的下表面裝設有與輪座22大致相同直徑的磨削輪24。磨削輪24具備有以不銹鋼、鋁等金屬材料所形成的輪基台26。輪基台26的下表面，環狀地配置排列有複數個磨削砥石28。 A disc-shaped wheel base 22 is fixed to the lower end portion of the main shaft 20. The lower surface of the wheel base 22 is provided with a grinding wheel 24 having substantially the same diameter as the wheel base 22. The grinding wheel 24 is provided with a wheel base 26 formed of a metal material such as stainless steel or aluminum. On the lower surface of the wheel base 26, a plurality of grinding stones 28 are arranged in an annular shape.
主軸20的上端側(基端側)連結有包含馬達等的旋轉機構(圖未示)。磨削輪24是藉由從此旋轉機構所傳達的旋轉力，而以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。 A rotating mechanism (not shown) including a motor or the like is coupled to the upper end side (base end side) of the main shaft 20. The grinding wheel 24 is rotated about a rotation axis substantially parallel to the vertical direction by the rotational force transmitted from the rotation mechanism.
磨削晶圓11的背面11b時，首先，是使貼附在晶圓11上的保護構件21的第2面21b接觸於工作夾台14的保持面14a，並使吸引源的負壓作用。藉此，晶圓11會以背面11b側露出於上方的狀態被吸引、保持於工作夾台14。 When the back surface 11b of the wafer 11 is ground, first, the second surface 21b of the protective member 21 attached to the wafer 11 is brought into contact with the holding surface 14a of the working chuck 14, and the negative pressure of the suction source acts. Thereby, the wafer 11 is attracted and held by the work chuck 14 in a state where the back surface 11b side is exposed upward.
其次，使工作夾台14在磨削輪24的下方移動，並如圖3(A)所示，在使工作夾台14與磨削輪24各自旋轉時， 使主軸殼體18下降。主軸殼體18的下降速度(下降量)是設為使磨削砥石28的下表面被按壓在晶圓11的背面11b的程度。藉此，能夠磨削晶圓11的背面11b。 Next, the work chuck 14 is moved under the grinding wheel 24, and as shown in Fig. 3(A), when the work chuck 14 and the grinding wheel 24 are each rotated, The spindle housing 18 is lowered. The lowering speed (falling amount) of the spindle housing 18 is such that the lower surface of the grinding vermicum 28 is pressed against the back surface 11b of the wafer 11. Thereby, the back surface 11b of the wafer 11 can be ground.
晶圓11的磨削是例如一邊測量晶圓11的厚度一邊進行。如圖3(B)所示，當使晶圓11變薄到完成厚度為止，而使溝15露出於背面11b側時，磨削步驟即結束。藉由此磨削步驟，將晶圓11分割成對應於各元件13的複數個元件晶片17。 The grinding of the wafer 11 is performed, for example, while measuring the thickness of the wafer 11. As shown in FIG. 3(B), when the wafer 11 is thinned to the thickness, and the groove 15 is exposed on the side of the back surface 11b, the grinding step is completed. By this grinding step, the wafer 11 is divided into a plurality of element wafers 17 corresponding to the respective elements 13.
在磨削步驟之後，實施將液狀晶粒接合用接著劑塗佈在晶圓11的背面11b的接著劑塗佈步驟。圖4(A)是示意地顯示接著劑塗佈步驟的局部剖面側面圖，圖4(B)是將圖4(A)的一部分放大顯示的圖。接著劑塗佈步驟是以例如圖4(A)所示之噴覆裝置32來實施。 After the grinding step, an adhesive application step of applying a liquid crystal die bonding adhesive to the back surface 11b of the wafer 11 is performed. 4(A) is a partial cross-sectional side view schematically showing an adhesive application step, and FIG. 4(B) is an enlarged view showing a part of FIG. 4(A). The subsequent coating step is carried out, for example, by the coating device 32 shown in Fig. 4(A).
噴覆裝置32具備有吸引、保持晶圓11的工作夾台34。工作夾台34被連結在包含馬達等的旋轉機構(圖未示)，並以繞著大致平行於鉛直方向的旋轉軸的方式旋轉。 The coating device 32 is provided with a work chuck 34 that sucks and holds the wafer 11. The work chuck 34 is coupled to a rotating mechanism (not shown) including a motor or the like, and is rotated about a rotation axis substantially parallel to the vertical direction.
工作夾台34的上表面成為吸引、保持被貼附在晶圓11上的保護構件21的第2面21b側的保持面34a。在此保持面34a上，是通過形成於工作夾台34的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用以吸引晶圓11以及保護構件21的吸引力。 The upper surface of the work chuck 34 serves as a holding surface 34a that sucks and holds the second surface 21b side of the protective member 21 attached to the wafer 11. The holding surface 34a is formed by a negative pressure acting on a suction source (not shown) through a flow path (not shown) formed inside the working chuck 34 to attract the wafer 11 and the protective member. 21 attraction.
工作夾台34的上方配置有朝向晶圓11的背面11b噴塗液狀晶粒接合用接著劑23的噴霧單元(噴霧器)36。噴霧單元(噴霧器)36包含L字形的支撐臂38、與固定在支撐臂38 的一端側的噴霧噴嘴40。 A spray unit (sprayer) 36 that sprays the liquid crystal grain bonding adhesive 23 toward the back surface 11b of the wafer 11 is disposed above the work chuck 34. The spray unit (sprayer) 36 includes an L-shaped support arm 38 and is fixed to the support arm 38. The spray nozzle 40 on one end side.
支撐臂38的另一端側連結有旋轉機構(圖未示)。此旋轉機構是在預定的角度範圍，讓支撐臂38旋轉以使噴霧噴嘴40搖動。又，噴霧噴嘴40是透過配管(圖未示)等而連接到液狀晶粒接合用接著劑23的供給源(圖未示)，且能夠將液狀晶粒接合用接著劑23向下噴射。 A rotation mechanism (not shown) is coupled to the other end side of the support arm 38. This rotating mechanism is a predetermined angular range that allows the support arm 38 to rotate to cause the spray nozzle 40 to rock. Further, the spray nozzle 40 is connected to a supply source (not shown) of the liquid crystal grain bonding adhesive 23 through a pipe (not shown) or the like, and can eject the liquid die bonding adhesive 23 downward. .
在本實施形態中，是使用以紫外線硬化的紫外線硬化型樹脂作為液狀晶粒接合用接著劑23。作為紫外線硬化型樹脂的具體例，可列舉出Henkel公司製的「Wafer Backside Coating」(註冊商標)等。不過，液狀晶粒接合用接著劑23的種類等並無限制，能夠使用以任意的外在刺激(例如，熱等)而硬化的硬化型樹脂(熱硬化型樹脂等)。 In the present embodiment, an ultraviolet curable resin which is cured by ultraviolet rays is used as the liquid crystal grain bonding adhesive 23 . Specific examples of the ultraviolet curable resin include "Wafer Backside Coating" (registered trademark) manufactured by Henkel Co., Ltd., and the like. However, the type of the liquid crystal grain bonding adhesive 23 or the like is not limited, and a curing resin (such as a thermosetting resin) which is cured by any external stimulus (for example, heat) can be used.
在接著劑塗佈步驟中，首先，是使貼附在晶圓11上的保護構件21的第2面21b接觸於工作夾台34的保持面34a，並使吸引源的負壓作用。藉此，晶圓11會以背面11b側露出於上方的狀態被吸引、保持於工作夾台34。 In the adhesive application step, first, the second surface 21b of the protective member 21 attached to the wafer 11 is brought into contact with the holding surface 34a of the working chuck 34, and the negative pressure of the suction source acts. Thereby, the wafer 11 is attracted and held by the work chuck 34 in a state where the back surface 11b side is exposed upward.
其次，使工作夾台34旋轉，並且使液狀晶粒接合用接著劑23從已使其搖動的噴霧噴嘴40向下噴射。藉此，如圖4(A)及圖4(B)所示，能夠將液狀晶粒接合用接著劑23噴塗並塗佈在晶圓11(元件晶片17)的背面11b。 Next, the work chuck 34 is rotated, and the liquid crystal grain bonding adhesive 23 is sprayed downward from the spray nozzle 40 which has been shaken. As a result, as shown in FIGS. 4(A) and 4(B), the liquid crystal grain bonding adhesive 23 can be sprayed and applied onto the back surface 11b of the wafer 11 (element wafer 17).
在本實施形態中，如上所述，由於將相鄰的元件晶片17的間隔A(溝15的寬度)做得較窄，因此不會有在相鄰的元件晶片17之間充填有液狀晶粒接合用接著劑23之情形。 In the present embodiment, as described above, since the interval A (the width of the groove 15) of the adjacent element wafers 17 is made narrow, liquid crystal grains are not filled between the adjacent element wafers 17. The case of the binder 23 for grain bonding.
又，液狀晶粒接合用接著劑23的供給量等，以在可以抑制在相鄰的元件晶片17上所塗佈的液狀晶粒接合用接著劑23彼此之接觸的範圍內進行調整為宜。 In addition, the supply amount of the liquid crystal die bonding adhesive 23 or the like is adjusted so as to prevent contact between the liquid crystal grain bonding adhesives 23 applied to the adjacent element wafers 17 to each other. should.
例如，藉由將液狀晶粒接合用接著劑23的供給量調整成使所塗佈的液狀晶粒接合用接著劑23的厚度B比相鄰的元件晶片17的間隔A更小(A>B)，可以在相鄰的元件晶片17之間抑制液狀晶粒接合用接著劑23彼此之接觸。 For example, the supply amount of the liquid crystal grain bonding adhesive 23 is adjusted so that the thickness B of the applied liquid crystal grain bonding adhesive 23 is smaller than the interval A of the adjacent element wafers 17 (A) >B), the liquid crystal grain bonding adhesives 23 can be prevented from contacting each other between adjacent element wafers 17.
再者，藉由將液狀晶粒接合用接著劑23的供給量調整成使厚度B比間隔A的一半更小(0.5A>B)，可以更確實地在相鄰的元件晶片17之間防止液狀晶粒接合用接著劑23彼此的接觸。不過，液狀晶粒接合用接著劑23的供給量等並無限制，可以因應液狀晶粒接合用接著劑23的黏度等任意變更。 Further, by adjusting the supply amount of the liquid crystal grain bonding adhesive 23 to make the thickness B smaller than half of the interval A (0.5A>B), it is possible to more reliably exist between the adjacent element wafers 17. The liquid crystal grain bonding adhesive 23 is prevented from coming into contact with each other. However, the amount of supply of the liquid crystal grain bonding adhesive 23 or the like is not limited, and may be arbitrarily changed depending on the viscosity of the liquid crystal grain bonding adhesive 23 or the like.
當將液狀晶粒接合用接著劑23塗佈在晶圓11(元件晶片17)的背面11b時，接著劑塗佈步驟即結束。在本實施形態中，如圖4(B)所示，由於是在背面11b側以包覆元件晶片17的角的方式塗佈液狀晶粒接合用接著劑23，因此也能提高元件晶片17的抗折強度。 When the liquid crystal grain bonding adhesive 23 is applied onto the back surface 11b of the wafer 11 (element wafer 17), the adhesive application step is completed. In the present embodiment, as shown in FIG. 4(B), since the liquid crystal grain bonding adhesive 23 is applied so as to cover the corners of the element wafer 17 on the side of the back surface 11b, the element wafer 17 can be improved. The flexural strength.
在接著劑塗佈步驟之後，實施使被塗佈在晶圓11的背面11b的液狀晶粒接合用接著劑23硬化的硬化步驟。圖5是示意地顯示硬化步驟的局部剖面側面圖。硬化步驟是例如，以圖5所示的硬化裝置42來實施。 After the adhesive application step, a curing step of curing the liquid die bonding adhesive 23 applied to the back surface 11b of the wafer 11 is performed. Fig. 5 is a partial cross-sectional side view schematically showing a hardening step. The hardening step is carried out, for example, by the hardening device 42 shown in Fig. 5.
硬化裝置42具備有保持晶圓11的工作台44。工作台44的上表面成為保持被貼附在晶圓11上的保護構件21的 第2面21b側的保持面44a。在工作台44的上方配置有放射紫外線(紫外光)的光源46。 The curing device 42 is provided with a table 44 that holds the wafer 11 . The upper surface of the stage 44 serves as a protective member 21 that is held attached to the wafer 11. The holding surface 44a on the second surface 21b side. A light source 46 that emits ultraviolet rays (ultraviolet light) is disposed above the table 44.
在硬化步驟中，首先，是以使被貼附在晶圓11上的保護構件21的第2面21b接觸於工作台44的保持面44a的方式，將晶圓11以及保護構件21載置在工作台44上。藉此，晶圓11會以被塗佈於背面11b的液狀晶粒接合用接著劑23露出於上方的狀態被保持在工作台44上。 In the hardening step, first, the wafer 11 and the protective member 21 are placed such that the second surface 21b of the protective member 21 attached to the wafer 11 is in contact with the holding surface 44a of the table 44. On the workbench 44. Thereby, the wafer 11 is held on the table 44 in a state where the liquid die bonding adhesive 23 applied to the back surface 11b is exposed upward.
其次，將紫外線從光源46照射到背面11b側的液狀晶粒接合用接著劑23上。藉此，能使液狀晶粒接合用接著劑23硬化。再者，紫外線的照射條件是在例如不使液狀晶粒接合用接著劑23完全硬化的範圍內進行設定。使液狀晶粒接合用接著劑23硬化(半硬化)而完成接著層後，硬化步驟即結束。 Next, ultraviolet rays are irradiated from the light source 46 onto the liquid crystal grain bonding adhesive 23 on the back surface 11b side. Thereby, the liquid crystal grain bonding adhesive 23 can be cured. In addition, the irradiation conditions of the ultraviolet rays are set, for example, within a range in which the liquid crystal grain bonding adhesive 23 is not completely cured. After the liquid crystal grain bonding adhesive 23 is cured (semi-hardened) to complete the bonding layer, the curing step is completed.
如上所述，在本實施形態的元件晶片的製造方法中，由於是在晶圓11的正面11a側形成溝15，並磨削背面11b來將晶圓11分割成元件晶片17，之後，在晶圓11的背面11b噴射塗佈液狀晶粒接合用接著劑23，因此可以藉由使此液狀晶粒接合用接著劑23硬化，而在各元件晶片17上形成接著層。亦即，在本實施形態的元件晶片的製造方法中，由於沒有要以雷射光線等將接著層切斷的必要，因此能縮短接著層的形成所需要的時間。 As described above, in the method of manufacturing the element wafer of the present embodiment, the groove 15 is formed on the front surface 11a side of the wafer 11, and the back surface 11b is ground to divide the wafer 11 into the element wafer 17, and then, in the crystal Since the liquid crystal grain bonding adhesive 23 is sprayed and applied on the back surface 11b of the circle 11, the liquid crystal grain bonding adhesive 23 can be cured to form an adhesive layer on each element wafer 17. That is, in the method of manufacturing an element wafer of the present embodiment, since it is not necessary to cut the adhesive layer by laser light or the like, the time required for formation of the adhesive layer can be shortened.
又，在本實施形態的元件晶片的製造方法中，由於在背面11b側以包覆元件晶片17的角的方式塗佈液狀晶粒接合用接著劑23，因此也能提高元件晶片17的抗折強 度。 Further, in the method of manufacturing the element wafer of the present embodiment, since the liquid crystal grain bonding adhesive 23 is applied so as to cover the corner of the element wafer 17 on the side of the back surface 11b, the resistance of the element wafer 17 can be improved. Strong degree.
其次，說明為了確認相鄰的元件晶片17的間隔A與液狀晶粒接合用接著劑23的厚度B的所期望的關係而進行的實驗。在本實驗中，準備元件晶片17的間隔A(亦即，溝15的寬度)或液狀晶粒接合用接著劑23的厚度B不同的複數個樣品，並確認了相鄰的元件晶片17透過液狀晶粒接合用接著劑23而被連結的「雙晶粒」之發生率。 Next, an experiment will be described in order to confirm the desired relationship between the gap A between the adjacent element wafers 17 and the thickness B of the liquid crystal grain bonding adhesive 23. In this experiment, a plurality of samples in which the interval A of the element wafer 17 (that is, the width of the groove 15) or the thickness B of the liquid crystal bonding adhesive 23 was different were prepared, and it was confirmed that the adjacent element wafer 17 was transmitted. The incidence of "double crystal grains" to which the liquid crystal grain bonding adhesive 23 is connected.
本實驗的結果如表1所示。再者，在表1的「評價」欄中，分別以○表示良好、△表示可、×表示不可。 The results of this experiment are shown in Table 1. In addition, in the "Evaluation" column of Table 1, ○ indicates good, △ indicates OK, and × indicates no.
從表1可知，當滿足A>B時，可以抑制雙晶粒的發生。尤其是，當滿足0.5A>B時，可以更確實地防止雙晶粒的發生。 It can be seen from Table 1 that when A>B is satisfied, the occurrence of double crystal grains can be suppressed. In particular, when 0.5A>B is satisfied, the occurrence of double crystal grains can be more surely prevented.
再者，本發明並不限定於上述實施形態之記載，可作各種變更而實施。例如，在上述實施形態中，雖然是以噴霧單元(噴霧器)36的噴塗來塗佈液狀晶粒接合用接著劑23，但也可以用其他的方法來塗佈液狀晶粒接合用接著劑23。 Furthermore, the present invention is not limited to the description of the above embodiments, and can be implemented in various modifications. For example, in the above embodiment, the liquid crystal grain bonding adhesive 23 is applied by spraying of a spray unit (atomizer) 36, but the liquid crystal grain bonding adhesive may be applied by another method. twenty three.
圖6是示意地顯示變形例的接著劑塗佈步驟的局 部剖面側面圖。變形例的接著劑塗佈步驟是以例如圖6所示的噴射(inject)裝置52來實施。噴射裝置52具備有保持晶圓11的工作台54。工作台54的上表面成為保持被貼附在晶圓11上的保護構件21的第2面21b側的保持面54a。 Fig. 6 is a view schematically showing a procedure of an adhesive coating step of a modification Side profile of the section. The adhesive application step of the modification is carried out, for example, by an injecting device 52 as shown in FIG. The ejection device 52 is provided with a table 54 that holds the wafer 11. The upper surface of the table 54 serves as a holding surface 54a that holds the second surface 21b side of the protective member 21 attached to the wafer 11.
工作台54的上方配置有噴射噴嘴56。此噴射噴嘴56是構成為例如可相對於保持晶圓11的工作台54移動，而在晶圓11的背面11b的任意的區域噴射液狀晶粒接合用接著劑23。 An injection nozzle 56 is disposed above the table 54. The injection nozzle 56 is configured to eject the liquid crystal grain bonding adhesive 23 in an arbitrary region of the back surface 11b of the wafer 11 so as to be movable, for example, with respect to the table 54 holding the wafer 11.
在變形例的接著劑塗佈步驟中，首先，是以使被貼附在晶圓11上的保護構件21的第2面21b接觸於工作台54的保持面54a的方式，將晶圓11以及保護構件21載置在工作台54上。藉此，晶圓11會以背面11b側露出於上方的狀態被保持於工作台54。 In the adhesive application step of the modification, first, the wafer 11 and the wafer 11 are placed such that the second surface 21b of the protective member 21 attached to the wafer 11 is in contact with the holding surface 54a of the stage 54. The protective member 21 is placed on the table 54. Thereby, the wafer 11 is held by the table 54 in a state where the back surface 11b side is exposed upward.
其次，使噴射噴嘴56在任意的元件晶片17的上方移動，並使其噴射液狀晶粒接合用接著劑23。再者，液狀晶粒接合用接著劑23的噴射區域，也可限定在將晶圓11(元件晶片17)的溝15除外的區域。當重覆進行噴射噴嘴56的移動與液狀晶粒接合用接著劑23的噴射，而將液狀晶粒接合用接著劑23塗佈在所有的元件晶片17上時，變形例的接著劑塗佈步驟即結束。 Next, the ejection nozzle 56 is moved over the arbitrary element wafer 17, and the liquid crystal grain bonding adhesive 23 is ejected. Further, the ejection region of the liquid crystal die bonding adhesive 23 may be limited to a region excluding the groove 15 of the wafer 11 (element wafer 17). When the movement of the ejection nozzle 56 and the ejection of the liquid crystal bonding adhesive 23 are repeated, and the liquid crystal bonding adhesive 23 is applied onto all the element wafers 17, the adhesive coating of the modified example is applied. The cloth step ends.
另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍下，均可適當變更而實施。 In addition, the structure, the method, and the like of the above-described embodiments can be appropriately modified and implemented without departing from the scope of the invention.
11‧‧‧晶圓 11‧‧‧ wafer
11a‧‧‧正面 11a‧‧‧ positive
11b‧‧‧背面 11b‧‧‧Back
15‧‧‧溝 15‧‧‧ditch
17‧‧‧元件晶片 17‧‧‧Component chip
21‧‧‧保護構件 21‧‧‧Protection components
21a‧‧‧第1面 21a‧‧‧1st
21b‧‧‧第2面 21b‧‧‧2nd
23‧‧‧液狀晶粒接合用接著劑 23‧‧‧Liquid for die bonding
32‧‧‧噴覆裝置 32‧‧‧Spray device
34‧‧‧工作夾台 34‧‧‧Working table
34a‧‧‧保持面 34a‧‧‧ Keep face
36‧‧‧噴霧單元(噴霧器) 36‧‧‧Spray unit (sprayer)
38‧‧‧支撐臂 38‧‧‧Support arm
40‧‧‧噴霧噴嘴 40‧‧‧ spray nozzle
A‧‧‧間隔 A‧‧‧ interval
B‧‧‧厚度 B‧‧‧thickness
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