TWI681491B - Substrate treating apparatus - Google Patents

Abstract

Provided is a substrate treating apparatus comprises an equipment front end module for carrying in a substrate for a treatment and carrying out the substrate which has been treated, a processing module for processing the substrate, a transfer chamber for carrying in and out the substrate to the processing module and controlling an oxygen concentration, and a loadlock chamber positioned between the equipment front and end module and the transfer chamber for providing a path for the substrate to be moved and controlling an oxygen concentration.

Description

Substrate processing device

The present disclosure relates to a device for processing substrates.

In the method of manufacturing a semiconductor device or a liquid crystal display, various processes such as a photolithography process, an etching process, an ashing process, an ion implantation process, a thin film deposition process, and a cleaning process are all performed on the substrate. The lithography process in these processes is used to form circuit patterns on the substrate. The photolithography process includes a coating process, an exposure process, and a development process that are performed sequentially. The coating process is used to apply photoresist on the substrate, the exposure process is used to expose the circuit pattern on the substrate on which the photoresist is formed, and the development process is used to selectively develop the photoresist layer portion of the substrate.

The present invention provides a substrate processing apparatus capable of efficiently processing substrates.

Exemplary embodiments of the present inventive concept may provide a substrate processing apparatus including a device front-end module for loading a substrate to be processed and a processed substrate; a process module for processing the substrate; Base Loading and unloading the board into the process module and the transfer chamber for controlling oxygen concentration; and between the front-end module of the equipment and the transfer chamber for providing a path for the substrate to be moved and controlling the oxygen concentration Load the lock chamber.

In an exemplary embodiment, a sensor in the load lock chamber may be provided to detect the oxygen concentration therein.

In an exemplary embodiment, the load lock chamber may include a loading chamber for providing a path for substrates to be loaded into the transfer chamber from the device front-end module; and a loading chamber for supplying The substrate carried out from the transfer chamber to the device front-end module provides a path; wherein the oxygen concentration in the loading chamber and the loading chamber can be independently controlled.

In an exemplary embodiment, the loading chamber may be provided with a loading sensor for detecting the oxygen concentration in the loading chamber, and a loading sensor for detecting the oxygen concentration in the loading chamber.

In an exemplary embodiment, the loading chamber may be connected to a loading supply line for supplying inert gas and a loading exhaust line for exhausting gas.

In an exemplary embodiment, the supply of inert gas or the discharge of gas can be controlled based on the oxygen concentration detected from the loading sensor.

In an exemplary embodiment, the load-out chamber may be connected to A gas carrying supply line and a gas carrying exhaust line for exhausting gas.

In an exemplary embodiment, the supply of inert gas or the discharge of gas can be controlled based on the oxygen concentration detected from the load sensor.

In an exemplary embodiment, the transfer chamber may be provided with a sensor for detecting the oxygen concentration in the transfer chamber.

In an exemplary embodiment, the transfer chamber may be connected to a supply line for supplying inert gas and an exhaust line for exhausting gas, wherein the supply or gas of inert gas may be controlled according to the oxygen concentration detected from the sensor Of discharge.

In an exemplary embodiment, it may be provided to open and close the substrate between the front-end module of the apparatus and the load lock chamber, or between the load lock chamber and the transfer chamber, or in the transfer The door of the path that is transported between the chamber and the process chamber.

In an exemplary embodiment, the door may include a shield, in which an exhaust hole is formed to exhaust an inert gas toward an outer surface of the path when the path is opened and is set in a plate shape, and a driving member for moving the shield.

In an exemplary embodiment, a plurality of discharge holes may be formed in the width direction of the path corresponding to the width of the path.

In an exemplary embodiment, a distribution space connected to the plurality of discharge holes may be formed inside the shield.

In an exemplary embodiment, the paths are each arranged vertically, and the doors may include a first door for opening and closing the top path and a second door for opening and closing the bottom path.

In an exemplary embodiment, the first door moves to the top when the top path is opened, and the second door moves to the bottom when the bottom path is opened.

In an exemplary embodiment, the first discharge hole of the first door and the second discharge hole of the second door may be formed at positions offset from an array in which the two doors are arranged perpendicular to each other when viewed from the side.

1‧‧‧Substrate processing device

4‧‧‧Carrier

6‧‧‧Support

10‧‧‧ Loading port

20‧‧‧Equipment Front End Module (EFEM)

21‧‧‧ Transmission frame

25‧‧‧ First transmission robot

27‧‧‧ Transmission Orbit

30‧‧‧Process unit

40‧‧‧Load lock chamber

41‧‧‧ Loading chamber

42‧‧‧ Loaded out of the chamber

50‧‧‧Transport chamber

53‧‧‧Second transmission robot

60‧‧‧Process module

100‧‧‧ loaded into the shell

102‧‧‧carry out the shell

110‧‧‧ Load sensor

112‧‧‧ Loaded sensor

200‧‧‧Gas supply component

210‧‧‧ loading supply line

211‧‧‧ Load supply control device

220‧‧‧ carrying out the supply pipeline

221‧‧‧Contains supply control device

230‧‧‧Supply pipeline

231‧‧‧ Supply control device

300‧‧‧Exhaust

310‧‧‧ Loaded exhaust line

311‧‧‧ Loaded exhaust control device

320‧‧‧Exhaust line

321‧‧‧Contains exhaust control device

330‧‧‧Exhaust line

331‧‧‧ Loaded exhaust control device

500‧‧‧Housing

510‧‧‧Sensor

600‧‧‧ door

601‧‧‧The first door

602‧‧‧The second door

610‧‧‧Shield

611‧‧‧Top plate

612‧‧‧Bottom plate

615‧‧‧distribution space

616‧‧‧Discharge hole

620‧‧‧Drive parts

630‧‧‧Seal

631‧‧‧Pipeline

641‧‧‧First discharge hole

642‧‧‧Second discharge hole

G‧‧‧gate

G1‧‧‧gate (front gate)

G2‧‧‧gate (rear gate)

G3‧‧‧gate

P‧‧‧Gas supply device

W‧‧‧Substrate

FIG. 1 is a plan view of an apparatus for processing a substrate according to an embodiment of the present invention.

Figure 2 is a side view of the loading chamber and the transfer chamber.

Figure 3 is a side view of the load-out chamber and the transfer chamber.

Figure 4 shows the inertia according to the setting in the transfer chamber or the load lock chamber The correlation between the flow rate of sex gas and the oxygen concentration in the transfer chamber or the load lock chamber.

FIG. 5 shows the relative oxygen concentration of the transfer chamber or the load lock chamber according to the pressure of the gas discharged in the transfer chamber or the load lock chamber.

Fig. 6 shows the thickness of the oxide film of the substrate according to the amount of oxygen.

7 is a front view of the door.

Fig. 8 is a rear view of the door of Fig. 7.

9 is a perspective view of the disassembled door.

Figure 10 shows the movement of the gate when the gate is opened.

11 is a side view of the door movement according to another embodiment of the present invention.

Various exemplary embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some exemplary embodiments are shown in the drawings. However, the invention can be implemented in different forms and should not be interpreted as being limited to the embodiments set forth herein. On the contrary, the provision of these embodiments makes the present disclosure complete and complete, and will have general knowledge in the technical field to which the case belongs The person fully conveys the scope of the present invention. Therefore, the features of the schema are exaggerated to emphasize a clear explanation.

FIG. 1 is a plan view of an apparatus for processing a substrate according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1 includes an equipment front end module (EFEM) 20 and a process unit 30. The EFEM 20 and the process unit 30 are arranged in one direction. The direction in which the EFEM 20 and the process unit 30 are arranged is referred to as the first direction X, and the direction perpendicular to the first direction X when viewed from the top side is referred to as the second direction Y.

The EFEM 20 loads the substrate for processing in the substrate processing apparatus 1 and loads the processed substrate from the substrate processing apparatus 1. The EMEM 20 includes a loading port 10 and a transfer frame 21. The loading port 10 may be arranged in front of the EFEM 20 along the first direction X. The loading port 10 has a plurality of support members 6. Each support 6 is arranged along the second direction Y and positions the carrier 4 (eg, cassette, FOUP, etc.) having the substrate W to be provided in the process and the substrate W that has been processed. In the carrier 4, the substrate W to be provided in the process and the substrate W that has been processed are provided. The transfer frame 21 is arranged between the loading port 10 and the process unit 30. The transfer frame 21 is arranged therein, and includes a first transfer robot 25 for transferring the substrate W between the loading port 10 and the process unit 30. The first transfer robot 25 is movable along a transfer track 27 which is arranged along the second direction Y.

The process unit 30 includes a load lock chamber 40, a transfer chamber 50 and a process module 60.

The load lock chamber 40 and the transfer frame 21 are arranged adjacent to each other. In an example, the load lock chamber 40 may be disposed between the transfer chamber 50 and the EFEM 20. The load lock chamber 40 is provided to be able to control the oxygen concentration.

The load lock chamber 40 may include a load chamber 41 and a load chamber 42. The loading chamber 41 provides a spare space for the substrate W to be provided for processing when being transferred to the process module 60. The load-out chamber 42 provides a spare space for the substrate W that has been processed before being transferred to the EFEM 20. The loading chamber 41 and the loading chamber 42 are provided independently of each other.

A gate G1 (front gate G1) and a gate G2 (rear gate G2) are provided in the loading chamber 41 and the unloading chamber 42, respectively. The gate G1 (front gate G1) and the gate G2 (rear gate G2) include a front gate G1 located in a path connected to the EFEM 20 and a rear gate G2 located in a path connected to a transfer chamber 50 which will be described later. The gate G1 (front gate G1) and the gate G2 (rear gate G2) provide a path for the substrate to move. The gate G1 (front gate G1) and the gate G2 (rear gate G2) can be opened and closed by a door 600 which will be described later. The loading chamber 41 and the loading chamber 42 are provided to be able to control the oxygen concentration therein.

The transfer chamber 50 and the load lock chamber 40 are arranged adjacent to each other. When from the top When viewed from the side, the transfer chamber 50 may have a polygonal body. In one example, when viewed from the top side, the transfer chamber may have a pentagonal body. In the outer surface of the main body, the load lock chamber 40 and a plurality of process modules 60 are arranged along the periphery of the main body. In each side wall of the main body, a channel for substrate W entry is formed, and the path is connected to the transfer chamber 50, the load lock chamber 40, or the process module 60. In the internal space of the transfer chamber 50, a second transfer robot 53 for transferring the substrate W is arranged. The second transfer robot 53 transfers the unprocessed substrate W prepared in the loading chamber 41 to the process module 60 or transfers the processed substrate W from the process module 60 to the load-out chamber 42. In addition, in order to sequentially provide the substrate W among the plurality of process modules, the substrate W is transferred between the process modules 60. As in the example of FIG. 1, when the transfer chamber 50 has a pentagonal body, the load lock chamber 40 may be arranged in the side wall adjacent to the EFEM 20, and the process module 60 may be arranged in the rest of the side wall in sequence in. The transfer chamber 50 may be different according to the above-mentioned forms, and various forms may be provided according to the number of required process modules. The transfer chamber 50 is provided to be able to control the oxygen concentration therein.

The process module 60 is arranged along the periphery of the transfer chamber 50. A plurality of process modules 60 can be provided. The substrate W can be processed in each process module 60. The process module 60 receives the substrate W from the second transfer robot 53, processes the substrate W, and supplies the processed substrate W to the second transfer robot 53. The gate G3 is provided in the path in which the substrate is transferred between the process module 60 and the transfer chamber 50. The processing performed in each process module 60 may be the same or different. The process performed by the process module 60 may be a substrate used in manufacturing W semiconductor device or display panel manufacturing process. In one example, one or more of the process modules 60 may include a plasma module for processing the substrate W using plasma.

2 is a side view of the loading chamber and the transfer chamber, and FIG. 3 is a side view of the loading chamber and the transfer chamber.

2 and 3, the gas supply member 200 is connected to the load lock chamber 40 and the transfer chamber 50. The gas supply member 200 supplies inert gas to the load lock chamber 40 and the transfer chamber 50. In one example, the inert gas provided by the gas supply member 200 may be nitrogen. In the illustrated embodiment, the loading chamber 41, the loading chamber 42 and the transfer chamber 50 are connected to one gas supply member 200. However, they may be respectively connected to different gas supply members, or only one of them may be connected to different gas supply members.

The loading supply line 210 for supplying inert gas to the loading chamber 41 may be provided as a structure that can control the supply of inert gas and/or the amount of inert gas supplied. For example, the loading supply control device 211 for opening and closing the loading supply line 210 or controlling the flow rate may be provided in the loading supply line 210. The loading supply control device 211 may be a valve, MFC (Mass Flow Controller), or the like. The loading sensor 110 may be provided in the loading housing 100 of the loading chamber 41. The loading sensor 110 can detect the oxygen concentration in the loading chamber 41.

The delivery supply line 220 for supplying the inert gas to the delivery chamber 42 may be provided as a structure regardless of whether the inert gas is supplied and/or a structure that can control the amount of the inert gas supplied. For example, a load-out supply control device 221 for opening and closing the load-out supply line 220 or controlling the flow rate may be provided in the load-out supply line 220. The carry-out supply control device 221 may be a valve, MFC (Mass Flow Controller), or the like. The load sensor 112 may be provided in the load housing 102 of the load chamber 42. The load sensor 112 may detect the oxygen concentration in the load chamber 42.

The supply line 230 for supplying the inert gas to the transfer chamber 50 may be provided as a structure regardless of whether the inert gas is supplied and/or a structure that can control the amount of the inert gas supplied. For example, a supply control device 231 for opening and closing the supply line 230 or controlling the flow rate may be provided in the supply line 230. The supply control device 231 may be a valve, MFC (mass flow controller), or the like. The sensor 510 may be provided in the housing 500 of the transfer chamber 50. The sensor 510 can detect the oxygen concentration in the transfer chamber 50.

The load lock chamber 40 and the transfer chamber 50 are connected to the exhaust device 300. The exhaust device 300 exhausts the gas in the load lock chamber 40 and the transfer chamber 50. In the illustrated embodiment, the loading chamber 41, the loading chamber 42 and the transfer chamber 50 are connected to one exhaust device 300. However, they may be connected to each exhaust device 300, or only one of them may be connected to a different exhaust device 300.

The loading exhaust line 310 for exhausting gas to the loading chamber 41 may be provided as a structure regardless of whether the gas is exhausted and/or a structure that can control the amount of exhausted gas. For example, a loading exhaust control device 311 for opening and closing the loading exhaust line 310 or controlling the flow rate may be provided in the loading exhaust line 310. The loaded exhaust control device 331 may be a valve, MFC (Mass Flow Controller), or the like.

The carrier exhaust line 320 for exhausting gas to the carrier chamber 42 may be provided as a structure regardless of whether the gas is exhausted and/or a structure that can control the amount of exhausted gas. For example, a carried-out exhaust gas control device 321 for opening and closing the carried-out exhaust gas line 320 or controlling the flow rate may be provided in the carried-out exhaust gas line 320. The carried-out exhaust gas control device 321 may be a valve, MFC (Mass Flow Controller), or the like.

The exhaust line 330 for exhausting the gas to the transfer chamber 50 may be provided as a structure regardless of whether the gas is exhausted and/or a structure that can control the amount of the exhausted gas. For example, a loading exhaust control device 331 for opening and closing the exhaust line 330 or controlling the flow rate may be provided in the exhaust line 330. The loaded exhaust control device 331 may be a valve, MFC (Mass Flow Controller), or the like.

FIG. 4 shows the correlation of the oxygen concentration in the transfer chamber or the load lock chamber according to the flow rate of the inert gas provided in the transfer chamber or the load lock chamber.

Oxygen can flow into the load lock chamber 40 or the transfer chamber 50. Specifically, the front gate G1 is opened during loading of the substrate from the EFEM 20 into the loading chamber 41 or during loading of the substrate from the loading chamber 42 to the EFEM 20, and the outside air of the substrate processing apparatus 1 is permeable The front gate G1 flows. Here, the oxygen contained in the outside air flows together. And when the rear gate G2 is opened according to the process of transferring the substrate, outside air including oxygen may flow into the transfer chamber 50.

When the flow rate of the inert gas supplied to the load lock chamber 40 increases, the amount of oxygen in the load lock chamber 40 may decrease. This is the effect of the increased pressure in the load lock chamber 40 by the flow of inert gas, the inflow of outside air that decreases according to the flow of inert gas supplied, and so on. For reasons similar to the load lock chamber 40, when the amount of inert gas supplied increases, the amount of oxygen in the transfer chamber 50 may decrease.

FIG. 5 shows the relative oxygen concentration of the transfer chamber or the load lock chamber according to the pressure of the gas discharged in the transfer chamber or the load lock chamber.

When the pressure for exhausting the gas in the load lock chamber 40 increases, the amount of oxygen in the load lock chamber 40 may increase. This can be interpreted as that when the pressure for exhausting gas increases, the amount of exhausting gas increases, the amount and pressure of the gas in the load lock chamber 40 decrease, and thus the external air flow rate increases. For reasons similar to the load lock chamber 40, when the As the amount of body pressure increases, the amount of oxygen in the transfer chamber 50 may decrease.

Fig. 6 shows the thickness of the oxide film of the substrate according to the amount of oxygen.

The substrate may be oxidized by surrounding oxygen. Here, when other requirements are kept the same, the thickness of the oxide film according to the oxygen concentration may be similar to the root function diagram shown in FIG. 6. Therefore, an oxide film with a required thickness can be formed by controlling the oxygen concentration in which the substrate is placed without special treatment in the substrate.

The method for forming an oxide film on a substrate using the substrate processing apparatus 1 according to an embodiment of the present invention is specifically described below.

The loading supply line 210 supplies inert gas to the loading chamber 41. The inert gas may be provided inside the loading chamber 41 regardless of the open state of the front gate G1 and the rear gate G2. And the loading exhaust line 310 exhausts the gas loaded inside the exhaust chamber 41. The gas discharge into the chamber 41 is performed when the front gate G1 is closed, and may be stopped when the front gate G1 is opened. Therefore, it is possible to reduce the flow of external air discharged from the gas loaded into the chamber 41. In addition, when the front gate G1 is opened and closed, gas can be discharged in the loading chamber 41. Here, the amount of gas discharged into the loading chamber 41 may be controlled according to the open state of the front gate G1 to control the oxygen concentration of the loading chamber 41 according to the inflow of external air. In one example, when the front gate G1 is opened, the amount of gas discharged into the chamber 41 can be controlled to be lower than that of the front gate Decrease when the door G1 is closed. Also, the supply of inert gas through the loading supply line 210 can be controlled according to the oxygen concentration detected in the loading sensor 110. And, the gas exhausted through the loading exhaust line 310 can be controlled according to the oxygen concentration detected in the loading sensor 110.

The front gate G1 of the loading chamber 41 is opened for loading the substrate from the EFEM 20, and is closed after loading the substrate. The pressure of the loading chamber 41 can be controlled by the supply of inert gas loaded into the supply line 210 and the exhaust of gas by loading into the exhaust line 310 to maintain the set range. In one example, the loading chamber 41 can be operated from 1 torr to 850 torr.

After the substrate is loaded into the loading chamber 41 and the set time passes, the rear gate G2 is opened and the substrate is transferred to the transfer chamber 50. After that, when the substrate is carried out, the rear gate G2 may be closed. It is possible to supply inert gas to the loading chamber 41 and discharge the gas from the loading chamber 41 without the rear gate G2 being in an open state.

After the substrate is loaded into the loading chamber 41, it is possible to manage the time it takes to be loaded into the transfer chamber 50 within a set time range. In addition, the oxygen concentration loaded into the chamber 41 can be controlled by controlling the amount of inert gas supplied and/or gas exhausted. Therefore, before processing in the processing module, the thickness of the oxide film formed on the substrate can be controlled by controlling the oxygen concentration loaded into the chamber 41.

The supply line 230 supplies inert gas to the transfer chamber 50. The inert gas may be provided in the transfer chamber 50 regardless of the open state of the rear gate G2 and the gate G3. The amount of inert gas supplied can be controlled to control the oxygen concentration detected in the sensor 510. In one example, when the oxygen concentration in the transfer chamber 50 is lower than the set concentration, the amount of inert gas supplied may be reduced. In addition, when the oxygen concentration in the transfer chamber 50 is higher than the set concentration, the amount of inert gas supplied may increase.

The exhaust line 330 exhausts the gas in the transfer chamber 50. The gas can be discharged without using the open state of the rear gate G2 and the gate. The amount of exhaust gas can be controlled to control the oxygen concentration detected in the detector 510. In one example, when the oxygen concentration in the transfer chamber 50 is lower than the set concentration, the amount of inert gas supplied may be reduced. In addition, when the oxygen concentration in the transfer chamber 50 is higher than the set concentration, the amount of inert gas supplied may increase.

The pressure of the inert gas can be supplied through the inert gas of the supply line 230 and the gas discharge through the exhaust line 330 can be controlled to maintain the set range. In one example, the transfer chamber 50 can be operated within 700 to 850 torr. After that, the substrate is processed in more than one process module and then loaded out into the loading chamber 42.

Unprocessed substrates are loaded into the transfer chamber 50 and out of the process chamber 60 and/or the time consumed by the processed substrate and/or processed substrates are loaded into the process chamber 60 The time consumed for loading into the transfer chamber 50 and loading out to the loading module 42 can be managed within a set time range. In addition, the oxygen concentration in the transfer chamber 50 can be controlled by controlling the amount of inert gas supplied and/or exhaust gas. Therefore, by controlling the oxygen concentration in the transfer chamber 50, the substrate can control the thickness of the oxide film generated in the transfer chamber 50 after processing in the process chamber 60 and/or before transferring in the process chamber 60 The thickness of the oxide film produced in the chamber 50.

The delivery supply line 220 supplies the inert gas to the delivery chamber 42. The inert gas may be provided in the load-out chamber 42 regardless of the open state of the front gate G1 and the rear gate G2. The carrier exhaust line 320 exhausts the gas in the carrier chamber 42. And the carrying exhaust line 320 exhausts the gas in the carrying chamber 42. The gas discharging from the chamber 42 is discharged when the front gate G1 is closed, and can be stopped when the front gate G1 is opened. Therefore, it is possible to reduce the flow of outside air from which gas is discharged in the carrying chamber 42. In addition, when the front gate G1 is opened and closed, gas discharge can be performed in the load-out chamber 42. Here, the amount of gas exhausted in the carry-out chamber 42 may be controlled according to the open state of the front gate G1 to control the oxygen concentration of the carry-out chamber 42 according to the inflow of outside air. In one example, when the front gate G1 is opened, the amount of gas discharged from the load chamber 42 can be controlled to be reduced compared to when the front gate G1 is closed.

Also, the supply of inert gas through the delivery supply line 220 can be controlled according to the oxygen concentration detected in the delivery sensor 112. In addition, according to the oxygen concentration detected in the load sensor 112, the discharge through the load can be controlled. The gas in the gas line 320 is discharged.

The rear gate G2 of the loading chamber 42 is opened for loading the substrate from the transfer chamber 50 and closed after loading the substrate. It is possible to supply the inert gas to the load-out chamber 42 and discharge the gas from the load-out chamber 42 without opening the rear gate G2. The pressure of the carrier chamber 41 can be controlled by the inert gas supply of the carrier supply line 220 and the gas discharge by the carrier exhaust line 320 to maintain the set range. In one example, the carry-out chamber 42 can be operated from 1 torr to 850 torr.

After the substrate is loaded into the load-out chamber 42 and the time lapse is set, the front gate G1 is opened and the substrate is transferred to the EFEM 20. After that, when the substrate is carried out, the front gate G1 is closed.

After the substrate is loaded into the load-out chamber 42, the time to be loaded into the EFEM 20 can be managed within a set time range. In addition, the oxygen concentration in the load-out chamber 42 can be controlled by controlling the amount of inert gas supplied and/or gas exhausted. Therefore, after processing in the processing module, the thickness of the oxide film formed on the substrate can be controlled by controlling the oxygen concentration in the carry-out chamber 42.

7 is a front view of the door. Fig. 8 is a rear view of the door of Fig. 7.

Door 600 can be provided to open and close the front gate G1, rear gate G2 or Gate G3. The door 600 includes a shield member 610 and a driving member 620.

The shield 610 may be provided in the form of a plate having a set thickness. The driving member 620 may be connected to the outside of the shield member 610 and move the shield member 610 in the setting direction (up and down or left and right). Hereinafter, an example when the driving member 620 is connected to the front of the shield 610 and the shield 610 is moved up and down is explained.

The seal 630 is provided on the rear side of the shield 610. When the shield 610 is arranged on the gate G to close the gate (G1, G2, or G3; hereinafter referred to as G), a seal 630 may be provided to surround the outer circumference of the gate G, and the seal of the gate G may be enhanced by the door 600.

9 is a perspective view of the disassembled door.

Referring to FIG. 9, a distribution space 615 and a discharge hole 616 are formed in the shield 610.

The distribution space 615 is formed to have the set volume inside of the shield 610. In an example, the distribution space 615 may have a groove-shaped space on the top side of the bottom plate 612, and the top of the bottom plate 612 may be closed by the top plate 611. In the shield 610, a discharge hole 616 connecting the distribution space 615 to the outside is formed. When the shield 610 moves to open the gate G, the discharge hole 616 is formed in a direction toward the gate G. Therefore, when the shield 610 is set to move upward to open the gate G, the discharge hole 616 is formed in the screen At the bottom surface of the shield 610. The plurality of discharge holes 616 may form the outer surface of the shield 610 along the width of the gate G to correspond to the width of the gate G.

Figure 10 shows the movement of the gate when the gate is opened.

The gas flows to the distribution space 615 through the pipe 631. In an example, the pipe 631 may be formed where the driving member 620 and the shield member 610 cross. Also, the end of the pipe 631 may be connected to the gas supply device P. In an example, the gas supply device P may be a pipe. The gas supply device P supplies an inert gas. The inert gas may be nitrogen. In addition, the duct 631 may be formed to connect the outside of the shield 610 and the distribution space 615, and the gas supply device may also be connected to the outside of the shield 610.

The exhaust hole 616 exhausts gas toward the opened gate G. In one example, when the shield 610 moves, the gate G is opened, and the gas supply device P may supply the gas of the gas discharged from the discharge hole 616 to the gate G. In addition, the gas supply device P may supply gas irrespective of the open state of the gate G, so that when the shield 610 is placed in a position where the gate G is opened, the gas discharged from the discharge hole 616 shields the front of the gate G. Moreover, the gas supply device P may also supply gas for the gas to be selectively exhausted to the gate G.

When the front of the gate G is shielded by the gas, the gate G may stop the gas movement, so that the movement of the gas allowing the movement of the substrate is minimized.

11 is a side view of the door movement according to another embodiment of the present invention.

Referring to FIG. 11, the two gates G may be arranged up and down respectively. Also, a first door 601 and a second door 602 that open and close the gate G may be provided in each gate G, respectively. Here, when the gate G is opened, the first door 601 placed on the upper side may move to the top side. When the gate G is opened, the second door 602 placed on the bottom side may move to the bottom side. When the gate G placed at the top is opened, the first exhaust hole 641 of the first door 601 may exhaust gas toward the gate G. And, when the gate G placed at the bottom is closed, the second exhaust hole 642 of the second door 602 may exhaust gas toward the gate G placed at the top. Therefore, in front of the top gate G, the gas discharged from the first door 610 and the second door 602 may flow. When viewed from the side, the first discharge hole 641 of the first door 601 and the second discharge hole 642 of the second door 602 formed in the corresponding direction may be formed at positions deviated from the array in which the two doors are vertically arranged. Therefore, the gas discharged from the first discharge hole 641 and the second discharge hole 642 does not collide and flow in front of the gate G.

The second door 602 may move to the direction of opening the gate G placed at the bottom, and when the gate G placed at the top is closed, the first door 601 may operate similarly to the above description.

The aforementioned embodiment is an example of the present invention. In addition, the above content only shows and describes preferred embodiments, and the embodiments may include various combinations, modifications Change and environment. That is, those with ordinary knowledge in the technical field to which this case belongs will understand that these embodiments can be replaced, modified, and changed without departing from the principle and spirit of defining the scope of the appended patent application and its equivalents . Furthermore, it is not intended that the scope of the application be limited to these specific embodiments or their specific features or benefits. On the contrary, it is intended to limit the scope of this application to the scope of patent applications and their equivalents that are now followed.

1‧‧‧Substrate processing device

4‧‧‧Carrier

6‧‧‧Support

10‧‧‧ Loading port

20‧‧‧Equipment Front End Module (EFEM)

21‧‧‧ Transmission frame

25‧‧‧ First transmission robot

27‧‧‧ Transmission Orbit

30‧‧‧Process unit

40‧‧‧Load lock chamber

41‧‧‧ Loading chamber

42‧‧‧ Loaded out of the chamber

50‧‧‧Transport chamber

53‧‧‧Second transmission robot

60‧‧‧Process module

G1‧‧‧gate (front gate)

G2‧‧‧gate (rear gate)

G3‧‧‧gate

W‧‧‧Substrate

Claims (14)

A substrate processing device includes: a device front-end module for loading a substrate to be processed and a processed substrate; a process module for processing the substrate; a transfer chamber for loading the substrate and Carried out to the process module and control the oxygen concentration; and a loading lock chamber, which is located between the front-end module of the equipment and the transfer chamber, is used to provide a path for the substrate to be moved and control the oxygen concentration; The loading lock chamber includes: a loading chamber for providing a path for the substrate to be loaded into the transfer chamber from the device front-end module; and a loading chamber for loading from the transfer chamber The substrate out of the front-end module of the device provides a path; wherein the loading chamber and the loading chamber are provided independently of each other; wherein the loading chamber is provided with a loading sensor for detecting the loading Oxygen concentration into the chamber; wherein the load-out chamber is provided with a load-out sensor for detecting the oxygen concentration in the load-out chamber; wherein the transfer chamber is provided with a sensor for detecting the transfer chamber Indoor oxygen concentration; and The oxygen concentration in the loading chamber and the loading chamber is independently controlled. The substrate processing apparatus according to claim 1, wherein the load lock chamber is provided with a sensor to detect the oxygen concentration therein. The substrate processing apparatus according to claim 1, wherein the loading chamber is connected to a loading supply line for supplying an inert gas, and is connected to a loading exhaust line for discharging gas. The substrate processing apparatus according to claim 3, wherein the supply of the inert gas or the discharge of the gas is controlled according to the oxygen concentration detected from the loading sensor. The substrate processing apparatus according to claim 1, wherein the load-out chamber is connected to a load-out supply line for supplying an inert gas, and is connected to a load-out exhaust line for exhausting gas. The substrate processing apparatus according to claim 5, wherein the supply of the inert gas or the discharge of the gas is controlled according to the oxygen concentration detected from the load sensor. The substrate processing apparatus according to claim 1, wherein the transfer chamber is connected to a supply line for supplying an inert gas, and is connected to an exhaust line for exhausting gas, wherein according to the detection from the sensor The oxygen concentration controls the supply of the inert gas or the discharge of the gas. The substrate processing apparatus according to claim 1, further comprising a door for opening and closing the substrate between the front-end module of the apparatus and the load lock chamber, or between the load lock chamber and the transfer The path that is transferred between the chambers, or between the transfer chamber and the process chamber. The substrate processing apparatus according to claim 8, wherein the door includes: a shield member in which a discharge hole is formed to discharge an inert gas toward an outer surface of the path when the path is opened and set in a plate shape; and a driving member, Used to move the shield. The substrate processing apparatus according to claim 9, wherein a plurality of discharge holes are formed in the width direction of the path corresponding to the width of the path. The substrate processing apparatus according to claim 10, wherein the shield includes a distribution space connected to a plurality of discharge holes therein. The substrate processing apparatus as recited in claim 9, wherein the paths are each vertically arranged, and the door includes a first door for opening and closing the top path and a second door for opening and closing the bottom path. The substrate processing apparatus according to claim 12, wherein the first door moves to the top when the top path is opened, and the second door moves to the bottom when the bottom path is opened. The substrate processing apparatus according to claim 13, wherein the first discharge hole of the first door and the second discharge hole of the second door are formed to be arranged perpendicular to each other when viewed from the side The position of the array is off.

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