TWI815827B - Substrate processing equipment - Google Patents
Substrate processing equipment Download PDFInfo
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- TWI815827B TWI815827B TW107137698A TW107137698A TWI815827B TW I815827 B TWI815827 B TW I815827B TW 107137698 A TW107137698 A TW 107137698A TW 107137698 A TW107137698 A TW 107137698A TW I815827 B TWI815827 B TW I815827B
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- oxygen concentration
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- 238000012545 processing Methods 0.000 title claims abstract description 139
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 353
- 239000001301 oxygen Substances 0.000 claims abstract description 353
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 353
- 230000032258 transport Effects 0.000 claims abstract description 39
- 230000001105 regulatory effect Effects 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims description 172
- 238000005259 measurement Methods 0.000 claims description 71
- 238000004378 air conditioning Methods 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 238000007664 blowing Methods 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 32
- 235000012431 wafers Nutrition 0.000 abstract description 30
- 238000010438 heat treatment Methods 0.000 abstract description 28
- 238000012546 transfer Methods 0.000 abstract description 16
- 230000007423 decrease Effects 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- 238000001816 cooling Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 239000003039 volatile agent Substances 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002716 delivery method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 210000003000 inclusion body Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C15/00—Enclosures for apparatus; Booths
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/14—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Paper (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
提供一種對於基板處理中之氧濃度的管理有用之基板處理裝置。 A substrate processing apparatus useful for managing oxygen concentration in substrate processing is provided.
基板處理裝置(1),係具備有:載體區塊(3),可設置收容有複數個晶圓(W)之載體(11);液處理單元(U1)及熱處理單元(U2),進行對晶圓(W)之處理;搬送臂(A2),在載體(11)與液處理單元(U1)及熱處理單元(U2)之間搬送晶圓(W);殼體(10),收容液處理單元(U1)及熱處理單元(U2)及搬送臂(A2);包體(20),以高於殼體(10)之氣密性收容殼體(10);第一壓力調節部(40),調節殼體(10)內之氣壓;第二壓力調節部(50),調節包體(20)內之氣壓;及控制部(100),執行如下述者:以使包體(20)內之氣壓保持比包體(20)外之氣壓及殼體(10)內之氣壓低之狀態的方式,控制第一壓力調節部(40)及第二壓力調節部(50)。 The substrate processing device (1) is equipped with: a carrier block (3), which can be equipped with a carrier (11) that accommodates a plurality of wafers (W); a liquid processing unit (U1) and a heat treatment unit (U2) for processing Processing of wafers (W); the transport arm (A2) transports the wafers (W) between the carrier (11) and the liquid processing unit (U1) and the thermal processing unit (U2); the housing (10) accommodates liquid processing The unit (U1), the heat treatment unit (U2) and the transfer arm (A2); the package body (20) accommodates the housing (10) with a higher airtightness than the housing (10); the first pressure regulating part (40) , adjust the air pressure in the casing (10); the second pressure adjustment part (50) adjusts the air pressure in the bag body (20); and the control part (100) performs as follows: so that the air pressure in the bag body (20) The first pressure regulating part (40) and the second pressure regulating part (50) are controlled so that the air pressure is kept lower than the air pressure outside the package body (20) and the air pressure inside the casing (10).
Description
本揭示,係關於基板處理裝置。This disclosure relates to a substrate processing apparatus.
在半導體之製造工程中,係有塗佈膜之氧化的疑慮。在專利文獻1,係揭示有例如一種基板之熱處理裝置,其在使用對氧敏感之材料的塗佈膜之硬化處理中,在被維持為低氧氣氛圍的處理室內,進行塗佈了該材料之基板的加熱及降溫。 [先前技術文獻] [專利文獻]In the semiconductor manufacturing process, there is a concern about oxidation of the coating film. Patent Document 1 discloses, for example, a heat treatment apparatus for a substrate in which, in the hardening process of a coating film using an oxygen-sensitive material, the material is coated in a processing chamber maintained in a low oxygen atmosphere. Heating and cooling of substrates. [Prior technical literature] [Patent Document]
[專利文獻1] 日本特開2002-93799號公報[Patent Document 1] Japanese Patent Application Publication No. 2002-93799
[本發明所欲解決之課題][Problems to be solved by the present invention]
在上述之熱處理裝置這樣的基板處理裝置中,存在使用對氧更敏感之材料作為塗佈膜的情形。在像這樣的情況下,被要求更適切地管理基板處理中之氧濃度。In substrate processing apparatuses such as the above-mentioned heat treatment apparatus, a material more sensitive to oxygen may be used as a coating film. Under such circumstances, it is required to more appropriately manage the oxygen concentration in substrate processing.
本揭示,係以提供一種對於基板處理中之氧濃度的管理有用之基板處理裝置為目的。 [用以解決課題之手段]The present disclosure aims to provide a substrate processing apparatus useful for managing oxygen concentration in substrate processing. [Means used to solve problems]
本揭示之一態樣之基板處理裝置,係具備有:載體支撐部,可設置收容有複數個基板之載體;處理單元,進行對基板之處理;搬送臂,在載體與處理單元之間搬送基板;殼體,收容處理單元及搬送臂;包體,以高於殼體之氣密性收容殼體;第一壓力調節部,調節殼體內之氣壓;第二壓力調節部,調節包體內之氣壓;及控制部,以使包體內之氣壓保持低於包體外之氣壓及殼體內之氣壓的任一者之狀態的方式,控制第一壓力調節部及第二壓力調節部。A substrate processing device according to one aspect of the present disclosure is provided with: a carrier support portion that can be provided with a carrier that accommodates a plurality of substrates; a processing unit that processes the substrates; and a transfer arm that transfers the substrates between the carrier and the processing unit. ; The housing accommodates the processing unit and the transport arm; the package body accommodates the housing with a higher airtightness than the housing; the first pressure regulating part regulates the air pressure in the housing; the second pressure regulating part regulates the air pressure in the package ; and a control unit that controls the first pressure regulating unit and the second pressure regulating unit in such a manner that the air pressure inside the package is maintained lower than either the air pressure outside the package or the air pressure inside the housing.
根據該基板處理裝置,以氣密性高於殼體之包體收容殼體,並將包體內之氣壓保持為低於包體外之氣壓及殼體內之氣壓的狀態,藉此,可抑制從殼體內漏出至殼體外之氣體向包體外漏出的情形。因此,可將搬送區域、處理單元內等、殼體內的各部中之氧濃度調節成所期望的狀態。因此,本基板處理裝置,係對於基板處理中之氧濃度的管理有用。According to this substrate processing apparatus, the housing is housed in a package with a higher airtightness than the housing, and the air pressure inside the package is maintained lower than the air pressure outside the package and the air pressure inside the housing. This can suppress leakage from the housing. The gas leaked from the body to the outside of the shell leaks out of the package. Therefore, the oxygen concentration in each part of the housing, such as the transfer area, the processing unit, etc., can be adjusted to a desired state. Therefore, the present substrate processing apparatus is useful for managing the oxygen concentration during substrate processing.
亦可更具備有:第一空調部,調節包體內之氧濃度,控制部,係亦可進一步執行如下述者:以將包體內之氧濃度維持低於包體外之氧濃度的方式,控制第一空調部。在該情況下,將收容殼體之包體內的氧濃度進行調節,藉此,可有效率地調節殼體內的各部中之氧濃度。It may also be further provided with: a first air-conditioning unit that regulates the oxygen concentration inside the bag, and the control unit may further perform the following steps: controlling the third air-conditioning unit to maintain the oxygen concentration inside the bag lower than the oxygen concentration outside the bag. An air conditioning department. In this case, by adjusting the oxygen concentration in the package housing the case, the oxygen concentration in each part within the case can be adjusted efficiently.
第一空調部,係亦可具有:氣體供給部,將氣體供給至包體內;濃度調節部,調整從氣體供給部被傳送至包體內之氣體的氧濃度;及回流部,使氣體從包體內回流至氣體供給部,控制部,係亦可執行如下述者:在將包體內之氧濃度維持低於包體外的氧濃度之際,以使從氣體供給部被傳送至包體內之氣體的氧濃度比包體外之氧濃度更低的方式,控制濃度調節部。在該情況下,由於從氣體供給部被傳送至包體內之氣體的氧濃度得到調整,因此,可更確實地維持包體內之氧濃度。又,由於藉由回流部使包體內之氣體回流至氣體供給部,因此,氧濃度經調節之氣體可被循環利用並效率良好地維持氧濃度。The first air conditioning unit may include: a gas supply part that supplies gas into the package; a concentration adjustment part that adjusts the oxygen concentration of the gas sent from the gas supply part to the package; and a return part that allows the gas to flow out of the package. Returning to the gas supply part, the control part may also perform the following: while maintaining the oxygen concentration inside the package lower than the oxygen concentration outside the package, the oxygen of the gas transferred from the gas supply part to the package can be The concentration adjustment part is controlled so that the oxygen concentration is lower than the oxygen concentration outside the package. In this case, since the oxygen concentration of the gas sent from the gas supply part into the package is adjusted, the oxygen concentration in the package can be maintained more reliably. In addition, since the gas in the package is returned to the gas supply part through the return part, the gas with the adjusted oxygen concentration can be recycled and the oxygen concentration can be maintained efficiently.
第一壓力調節部,係亦可具有:送風部,將氣體從包體內傳送至殼體內,第二壓力調節部,係亦可具有:第一排氣部,將包體內之氣體的一部分導引至排氣路徑。在該情況下,能以簡單的構成來調節氣壓。The first pressure regulating part may also have an air supply part to transmit gas from the package to the casing. The second pressure regulating part may also have a first exhaust part to guide part of the gas in the package. to the exhaust path. In this case, the air pressure can be adjusted with a simple configuration.
該基板處理裝置,係亦可更具備有:第一門,用於進出包體內;第一鎖固,對容許第一門之開放的狀態與禁止第一門之開放的狀態進行切換;及第一氧濃度感測器,計測包體內之氧濃度,控制部,係亦可進一步執行如下述者:以使從氣體供給部被傳送至包體內之氣體的氧濃度比包體內之氧濃度更高的方式,控制濃度調節部;及在第一氧濃度感測器所致之氧濃度的計測結果低於預定值的情況下,以禁止第一門之開放的方式,控制第一鎖固。在該情況下,由於直至包體內之氧濃度被調節成預定值以上之前,係藉由第一鎖固禁止第一門的開放,因此,例如可在作業員進入包體內之前,使包體內的氧濃度確實地上升。The substrate processing device may further include: a first door for entering and exiting the package; a first lock for switching between a state that allows the opening of the first door and a state that prohibits the opening of the first door; and a first lock. An oxygen concentration sensor measures the oxygen concentration in the bag, and the control unit may further perform the following: so that the oxygen concentration of the gas sent from the gas supply part to the bag is higher than the oxygen concentration in the bag. in a manner of controlling the concentration adjustment part; and in the case where the measurement result of the oxygen concentration caused by the first oxygen concentration sensor is lower than a predetermined value, in a manner of prohibiting the opening of the first door, controlling the first lock. In this case, since the opening of the first door is prohibited by the first lock until the oxygen concentration in the package is adjusted to be equal to or higher than the predetermined value, for example, before the operator enters the package, the oxygen concentration in the package can be Oxygen concentration definitely rises.
而且,該基板處理裝置,係亦可更具備有:第二氧濃度感測器,計測殼體內可向外部開放之空間的氧濃度,控制部,係即便在第二氧濃度感測器所致之氧濃度的計測結果低於預定值的情況下,亦可以禁止第一門之開放的方式,控制第一鎖固。在該情況下,在作業員開放殼體中可向外部開放的空間之際,可使氧濃度確實地上升。Furthermore, the substrate processing apparatus may further include: a second oxygen concentration sensor that measures the oxygen concentration in a space open to the outside within the casing, and the control unit is configured to operate on the second oxygen concentration sensor. When the measurement result of the oxygen concentration is lower than a predetermined value, the first lock can also be controlled by prohibiting the opening of the first door. In this case, when the operator opens the space in the casing that can be opened to the outside, the oxygen concentration can be reliably increased.
又,該基板處理裝置,係亦可更具備有:第三氧濃度感測器,計測回流部內的氧濃度,控制部,係即便在第三氧濃度感測器所致之氧濃度的檢測結果低於預定值的情況下,亦可以禁止第一門之開放的方式,控制第一鎖固。在該情況下,由於直至回流部內之氧濃度成為預定值以上之前,係藉由第一鎖固禁止第一門的開放,因此,可使包體內的氧濃度更確實地上升。In addition, the substrate processing apparatus may further include a third oxygen concentration sensor that measures the oxygen concentration in the recirculation part, and a control unit that detects the oxygen concentration based on the detection result of the third oxygen concentration sensor. When the value is lower than the predetermined value, the first lock can also be controlled by prohibiting the opening of the first door. In this case, since the first lock prohibits the opening of the first door until the oxygen concentration in the return part reaches a predetermined value or more, the oxygen concentration in the package can be increased more reliably.
亦可更具備有:第四氧濃度感測器,計測氣體供給部內的氧濃度,控制部,係即便在第四氧濃度感測器所致之氧濃度的檢測結果低於預定值的情況下,亦可以禁止第一門之開放的方式,控制第一鎖固。在該情況下,由於直至氣體供給部內之氧濃度成為預定值以上之前,係藉由第一鎖固禁止第一門的開放,因此,可使包體內的氧濃度更確實地上升。You may further include a fourth oxygen concentration sensor that measures the oxygen concentration in the gas supply unit, and a control unit that detects the oxygen concentration even if the detection result of the oxygen concentration by the fourth oxygen concentration sensor is lower than a predetermined value. , you can also prohibit the opening of the first door and control the first lock. In this case, since the opening of the first door is prohibited by the first lock until the oxygen concentration in the gas supply part reaches a predetermined value or more, the oxygen concentration in the package can be increased more reliably.
而且,該基板處理裝置,係亦可更具備有:揮發物濃度感測器,用以計測從處理單元內流出至包體內之揮發物的濃度,控制部,係即便在揮發物濃度感測器所致之計測結果高於預定值的情況下,亦可以禁止第一門之開放的方式,控制第一鎖固。在該情況下,由於直至包體內之揮發物濃度成為預定值以下之前,係藉由第一鎖固禁止第一門的開放,因此,可在作業員進入包體內之前,確實地削減包體內的揮發物。Moreover, the substrate processing apparatus may further include: a volatile matter concentration sensor for measuring the concentration of volatile matter flowing out from the processing unit into the package, and the control unit is located on the volatile matter concentration sensor When the resulting measurement result is higher than the predetermined value, the first lock can also be controlled by prohibiting the opening of the first door. In this case, since the opening of the first door is prohibited by the first lock until the concentration of volatile matter in the package becomes below the predetermined value, it is possible to reliably reduce the concentration of volatile matter in the package before the operator enters the package. volatiles.
揮發物濃度感測器,係亦可被設置於第一排氣部。藉由該構成,可利用第一排氣部,輕易地檢測揮發物濃度。The volatile matter concentration sensor may also be disposed in the first exhaust part. With this configuration, the concentration of volatile matter can be easily detected using the first exhaust part.
氣體供給部,係亦可含有:第一氣體管路,將氣體導引至包體內;及第二氣體管路,將氣體導引至處理單元內。在該情況下,由於一面以第一氣體管路將氣體導引至包體內,一面以作為其他路徑之第二氣體管路將氣體導引至處理單元內,因此,可更嚴格地調節處理單元內的氧濃度。The gas supply part may also include: a first gas pipeline that guides the gas into the package; and a second gas pipeline that guides the gas into the processing unit. In this case, since the first gas pipe is used to guide the gas into the package, and the second gas pipe as another path is used to guide the gas into the processing unit, the processing unit can be adjusted more strictly. oxygen concentration within.
亦可更具備有:第二排氣部,將處理單元內之氣體導引至排氣路徑。在該情況下,由於對揮發物濃度高之處理單元內的氣體進行排氣,因此,可抑制揮發物濃度變得過大之情形。It may also be further provided with: a second exhaust part to guide the gas in the processing unit to the exhaust path. In this case, since the gas in the processing unit with a high volatile matter concentration is exhausted, it is possible to suppress the volatile matter concentration from becoming excessively high.
第二排氣部,係亦可具有:第三氣體管路,將氣體導引至殼體之側方。根據該構成,容易在包體內彙整來自處理單元內之排氣用的管路。The second exhaust part may also have a third gas pipeline to guide the gas to the side of the housing. According to this structure, it is easy to integrate the exhaust pipe from the processing unit inside the package.
該基板處理裝置,係亦可更具備有:載體收容部,收容載體;第二門,使載體收容部內向包體外開關;第三門,使載體收容部內向包體內開關;收授部,在載體收容部內與載體支撐部之間進行載體的收授;及第二空調部,調節載體收容部內的氧濃度,控制部,係亦可進一步執行如下述者:在第二門的開放之前,以使載體收容部內之氧濃度接近包體外之氧濃度的方式,控制第二空調部;及在第三門的開放之前,以使載體收容部內之氧濃度接近包體內之氧濃度的方式,控制第二空調部。在該情況下,在開放第二門且搬出及搬入載體之際,可抑制氧濃度低之氣體從載體收容部內朝包體外的漏出。在開放第三門且搬送載體之際,可抑制氧濃度高之氣體從載體收容部內朝包體內的漏出。The substrate processing device may further include: a carrier accommodating part to accommodate the carrier; a second door to open and close the carrier accommodating part to the outside of the bag; a third door to open and close the carrier accommodating part to the inside of the bag; and a receiving and receiving part in The carrier is received and transferred between the carrier receiving part and the carrier supporting part; and the second air conditioning part adjusts the oxygen concentration in the carrier receiving part. The control part may further perform the following: before the second door is opened, The second air-conditioning unit is controlled in such a way that the oxygen concentration in the carrier receiving part is close to the oxygen concentration outside the bag; and before the opening of the third door, the third air conditioning part is controlled in such a way that the oxygen concentration in the carrier receiving part is close to the oxygen concentration in the bag. 2. Air conditioning department. In this case, when the second door is opened and the carrier is carried out and loaded in, leakage of gas with a low oxygen concentration from the inside of the carrier accommodating portion to the outside of the package can be suppressed. When the third door is opened and the carrier is transported, leakage of gas with a high oxygen concentration from the carrier accommodating portion into the package body can be suppressed.
該基板處理裝置,係亦可更具備有:第二鎖固,對容許第二門之開放的狀態與禁止第二門之開放的狀態進行切換;第三鎖固,對容許第三門之開放的狀態與禁止第三門之開放的狀態進行切換;及第五氧濃度感測器,計測載體收容部內之氧濃度,控制部,係亦可進一步執行如下述者:在第五氧濃度感測器所致之計測結果低於預定值的情況下,以禁止第二門之開放的方式,控制第二鎖固;及在第五氧濃度感測器所致之測定結果高於預定值的情況下,以禁止第三門之開放的方式,控制第三鎖固。在該情況下,由於直至載體收容部內的氧濃度被適切調節之前,係禁止第二門及第三門的開放,因此,可在第二門及第三門的開放之前,更確實地調節載體收容部內的氧濃度。 [發明之效果]The substrate processing device may further include: a second lock that switches between a state that allows the opening of the second door and a state that prohibits the opening of the second door; and a third lock that allows the opening of the third door. The state is switched with the state that prohibits the opening of the third door; and the fifth oxygen concentration sensor measures the oxygen concentration in the carrier receiving part, and the control unit can further perform the following: in the fifth oxygen concentration sensing When the measurement result caused by the fifth oxygen concentration sensor is lower than the predetermined value, the second lock is controlled by prohibiting the opening of the second door; and when the measurement result caused by the fifth oxygen concentration sensor is higher than the predetermined value Next, control the third lock by prohibiting the opening of the third door. In this case, since the opening of the second door and the third door is prohibited until the oxygen concentration in the carrier accommodating part is appropriately adjusted, the carrier can be adjusted more reliably before the second door and the third door are opened. Oxygen concentration in the containment unit. [Effects of the invention]
根據本揭示,可提供一種對於基板處理中之氧濃度的管理有用的基板處理裝置。According to the present disclosure, it is possible to provide a substrate processing apparatus useful for managing oxygen concentration in substrate processing.
以下,參照圖面,詳細地說明關於實施形態。在說明中,對同一要素或具有同一功能的要素標記同一符號,並省略重複的說明。Hereinafter, the embodiment will be described in detail with reference to the drawings. In the description, the same elements or elements with the same function are marked with the same symbols, and repeated descriptions are omitted.
[基板處理裝置] 基板處理裝置1,係進行對於基板之處理的裝置。基板處理裝置1,係例如在常壓的環境下,進行對於基板之處理。另外,常壓,係指以標準大氣壓101325Pa為中心上下20%之壓力的範圍。處理對象之基板,係例如半導體之晶圓W。在以下中,係作為一例,說明關於對晶圓W形成感光性被膜之基板處理裝置1。[Substrate processing equipment] The substrate processing device 1 is a device that processes a substrate. The substrate processing apparatus 1 processes substrates in, for example, a normal pressure environment. In addition, normal pressure refers to the pressure range 20% above and below the standard atmospheric pressure of 101325Pa. The substrate to be processed is, for example, a semiconductor wafer W. In the following, the substrate processing apparatus 1 for forming a photosensitive film on the wafer W will be described as an example.
如圖1及圖2所示般,基板處理裝置1,係具備有:感光性被膜之形成用的塗佈裝置2;包體20;第一空調部30;第一壓力調節部40;第二壓力調節部50;排氣部51;複數個負載鎖室60;收授部67;複數個第二空調部70;及控制部100。塗佈裝置2,係具有:載體區塊3(載體支撐部);處理區塊4;及殼體10。As shown in FIGS. 1 and 2 , the substrate processing apparatus 1 is equipped with: a coating device 2 for forming a photosensitive film; a package 20; a first air conditioning unit 30; a first pressure adjustment unit 40; The pressure regulating part 50; the exhaust part 51; a plurality of load lock chambers 60; a receiving and receiving part 67; a plurality of second air conditioning parts 70; and the control part 100. The coating device 2 has: a carrier block 3 (carrier support part); a processing block 4; and a housing 10.
載體區塊3,係可設置晶圓W用之載體11。載體11,係例如以密封狀態收容圓形之複數片晶圓W。載體區塊3,係內建有收授臂A1。收授臂A1,係從載體11取出晶圓W而傳遞至處理區塊4,並從處理區塊4接收晶圓W而返回到載體11內。The carrier block 3 is a carrier 11 for the wafer W. The carrier 11 accommodates, for example, a plurality of circular wafers W in a sealed state. The carrier block 3 has a built-in receiving and receiving arm A1. The receiving and receiving arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 4 , and receives the wafer W from the processing block 4 and returns it to the carrier 11 .
處理區塊4,係具有:複數個液處理單元U1(處理單元)及複數個熱處理單元U2(處理單元),進行對於晶圓W之處理;及搬送臂A2,將晶圓W搬送至該些單元。液處理單元U1,係進行將處理液塗佈於晶圓W之表面的處理(以下,稱為「塗佈處理」。)。液處理單元U1,係具有:罩杯C,收容塗佈處理中之晶圓W且回收處理液。熱處理單元U2,係進行藉由上述塗佈處理所形成之被膜之加熱等的熱處理。熱處理單元U2,係具有:腔室,收容被膜之加熱中的晶圓W。在處理區塊4內之載體區塊3側,係設置有棚架單元U10。棚架單元U10,係被區劃成沿上下方向排列的複數個格室。The processing block 4 has: a plurality of liquid processing units U1 (processing units) and a plurality of thermal processing units U2 (processing units) for processing the wafer W; and a transport arm A2 for transporting the wafer W to these units. unit. The liquid processing unit U1 performs processing of applying a processing liquid to the surface of the wafer W (hereinafter referred to as "coating processing"). The liquid processing unit U1 has a cup C, which accommodates the wafer W being coated and collects the processing liquid. The heat treatment unit U2 performs heat treatment such as heating of the film formed by the above-mentioned coating process. The heat treatment unit U2 has a chamber that accommodates the heated wafer W being coated. A shelf unit U10 is provided on the side of the carrier block 3 in the processing block 4 . The scaffold unit U10 is divided into a plurality of cells arranged in the up and down direction.
殼體10,係收容複數個液處理單元U1、複數個熱處理單元U2、棚架單元U10、收授臂A1及搬送臂A2。殼體10,係亦可不必被構成為一體,例如亦可按每個處理區塊分離。The casing 10 accommodates a plurality of liquid processing units U1, a plurality of heat treatment units U2, a rack unit U10, a receiving and receiving arm A1, and a transport arm A2. The housing 10 does not need to be integrally formed, and may be separated for each processing block, for example.
包體20,係以高於殼體10之氣密性收容殼體10。包體20,係含有:門21(第一門);鎖固(第一鎖固)22;及操作面板23。門21,係用於作業員從包體20外進出包體20內等。鎖固22,係對容許門21之開放的狀態(以下,稱為「解除狀態」。)與禁止門21之開放的狀態(以下,稱為「鎖固狀態」。)進行切換。操作面板23,係在包體20之外部空間側,被配置於門21的附近。操作面板23,係具有輸入部23a(參閱圖4(a))。操作面板23,係用於藉由對輸入部23a之輸入來要求門21的鎖固解除。The package body 20 contains the housing 10 with a higher airtightness than the housing 10 . The package body 20 includes: a door 21 (first door); a lock (first lock) 22; and an operation panel 23. The door 21 is used for operators to enter and exit the package body 20 from outside. The lock 22 switches between a state that allows the door 21 to be opened (hereinafter referred to as the "unlocked state") and a state that prohibits the door 21 from being opened (hereinafter referred to as the "locked state"). The operation panel 23 is attached to the external space side of the package body 20 and is arranged near the door 21 . The operation panel 23 has an input unit 23a (see Fig. 4(a)). The operation panel 23 is used to request unlocking of the door 21 by inputting to the input unit 23a.
第一空調部30,係調節包體20內之氧濃度。第一空調部30,係具有:氣體供給部31;濃度調節部32;及回流部33。第一空調部30,係被構成為藉由氣體供給部31、濃度調節部32及回流部33,使包體20內之氣體循環。循環之氣體,係例如含有惰性氣體(例如氮)及空氣。The first air conditioning unit 30 adjusts the oxygen concentration in the package body 20 . The first air conditioning unit 30 includes a gas supply unit 31 , a concentration adjustment unit 32 , and a return unit 33 . The first air conditioning unit 30 is configured to circulate the gas in the package body 20 through the gas supply unit 31, the concentration adjustment unit 32, and the return unit 33. The circulating gas contains, for example, inert gas (such as nitrogen) and air.
氣體供給部31,係含有:送風機31a,將氣體壓送至包體20內;管路L1,L2;及過濾器31b,31c。送風機31a,係具有:溫調單元31d,調節壓送之氣體的溫度。作為溫調單元31d之具體例,係可列舉出加熱器及冷卻線圈等。管路L1(第一氣體管路),係將氣體從送風機31a導引至包體20內。管路L2(第二氣體管路),係將氣體從送風機31a導引至各液處理單元U1內。例如管路L2,係將氣體導引至各液處理單元U1內之罩杯C。過濾器31b,係被設置於管路L1,去除流動於管路L1之氣體中的微粒等。過濾器31c,係被設置於管路L2,去除流動於管路L1之氣體中的微粒等。作為過濾器31b、31c之具體例,係可列舉出HEPA過濾器等。The gas supply part 31 includes: an air blower 31a to pressure-feed gas into the package body 20; pipelines L1 and L2; and filters 31b and 31c. The air blower 31a has a temperature adjustment unit 31d for adjusting the temperature of the pressure-fed gas. Specific examples of the temperature control unit 31d include a heater, a cooling coil, and the like. The pipeline L1 (first gas pipeline) guides gas from the blower 31a into the package body 20. The pipeline L2 (second gas pipeline) guides gas from the blower 31a into each liquid processing unit U1. For example, pipeline L2 guides gas to the cup C in each liquid treatment unit U1. The filter 31b is installed in the pipeline L1 and removes particles and the like in the gas flowing in the pipeline L1. The filter 31c is provided in the pipeline L2 and removes particles and the like in the gas flowing in the pipeline L1. Specific examples of the filters 31b and 31c include HEPA filters.
回流部33,係使氣體從包體20內回流至氣體供給部31。例如回流部33,係含有:管路L5,L6;及過濾器單元33a,33b,33c,33d。管路L5,係將氣體從包體20內及熱處理單元U2導引至氣體供給部31。管路L6,係將氣體從液處理單元U1導引至氣體供給部31。The recirculation part 33 recirculates gas from the inside of the package 20 to the gas supply part 31 . For example, the return part 33 includes: pipelines L5 and L6; and filter units 33a, 33b, 33c, and 33d. The pipeline L5 guides the gas from the inside of the package 20 and the heat treatment unit U2 to the gas supply part 31 . The pipeline L6 guides gas from the liquid processing unit U1 to the gas supply unit 31 .
過濾器單元33a,33b,係被設置於管路L5。過濾器單元33a,係含有:冷卻部C1;及過濾器F1。冷卻部C1,係例如藉由冷卻線圈冷卻氣體。過濾器F1,係例如HEPA過濾器,去除氣體中的微粒等。過濾器單元33b,係被配置於過濾器單元33a與氣體供給部31之間,含有過濾器F2。過濾器F2,係例如藉由活性碳去除氣體中的有機物。The filter units 33a and 33b are provided in the pipeline L5. The filter unit 33a includes a cooling unit C1 and a filter F1. The cooling part C1 cools the gas using a cooling coil, for example. The filter F1 is a HEPA filter, for example, and removes particles in the gas. The filter unit 33b is arranged between the filter unit 33a and the gas supply part 31, and includes the filter F2. The filter F2 removes organic matter in the gas using activated carbon, for example.
過濾器單元33c,33d,係被設置於管路L6。過濾器單元33c,係含有:冷卻部C3;及過濾器F3。冷卻部C3,係例如藉由冷卻線圈冷卻氣體。過濾器F3,係例如HEPA過濾器,去除氣體中的微粒等。過濾器單元33d,係被配置於過濾器單元33c與氣體供給部31之間,含有過濾器F4。過濾器F4,係例如藉由活性碳去除氣體中的有機物。The filter units 33c and 33d are provided in the pipeline L6. The filter unit 33c includes a cooling unit C3 and a filter F3. The cooling part C3 cools the gas using a cooling coil, for example. The filter F3 is a HEPA filter, for example, and removes particles in the gas. The filter unit 33d is disposed between the filter unit 33c and the gas supply part 31, and includes the filter F4. The filter F4 removes organic matter in the gas using activated carbon, for example.
另外,亦可在過濾器單元33a,33b,33c,33d的任一者設置氣體壓送用之送風機f。例如,在圖示之構成中,係在過濾器單元33a,33b,33d設置有送風機f。In addition, a blower f for pressurizing gas may be provided in any one of the filter units 33a, 33b, 33c, and 33d. For example, in the structure shown in the figure, the air blower f is provided in the filter units 33a, 33b, and 33d.
濃度調節部32,係對氣體供給部31供給之氣體的氧濃度進行調節。濃度調節部32,係例如含有:管路L3,L4;及閥32a,32b。管路L3,係將空氣從送風機31a導入至朝包體20內之氣體的流路內。例如,管路L1,係從過濾器單元33a,33b,33c,33d之任一者(例如過濾器單元33a)延伸,經由過濾器單元33a導入空氣。The concentration adjustment unit 32 adjusts the oxygen concentration of the gas supplied from the gas supply unit 31 . The concentration adjustment unit 32 includes, for example, pipelines L3 and L4 and valves 32a and 32b. The pipeline L3 introduces air from the blower 31a into the gas flow path into the package body 20 . For example, the pipeline L1 extends from any one of the filter units 33a, 33b, 33c, and 33d (for example, the filter unit 33a), and introduces air through the filter unit 33a.
閥32b,係被設置於管路L4,調節管路L4內之流路的開合度。管路L4,係從氣體供給部31將惰性氣體導入至朝包體20內之氣體的流路內。例如管路L4,係將氮氣之供給源N與送風機31a連接,並從供給源N將氮氣導入至送風機31a內。閥32b,係被設置於管路L4,調節管路L4內之流路的開合度。另外,調節流路之開合度,係亦含有遮斷流路的情形。The valve 32b is provided in the pipeline L4 and adjusts the opening and closing degree of the flow path in the pipeline L4. The pipe line L4 introduces the inert gas from the gas supply part 31 into the gas flow path into the package body 20 . For example, the pipeline L4 connects the nitrogen supply source N and the air blower 31a, and introduces the nitrogen gas from the supply source N into the air blower 31a. The valve 32b is provided in the pipeline L4 and adjusts the opening and closing degree of the flow path in the pipeline L4. In addition, adjusting the opening and closing of the flow path also includes blocking the flow path.
第一壓力調節部40,係調節殼體10內之氣壓。第一壓力調節部40,係具有送風部41,42。送風部41,係將氣體從包體20內傳送至殼體10內。送風部41,係例如內建有過濾器(未圖示)之風扇,將去除了微粒等之氣體傳送至殼體10內。送風部42,係將氣體從殼體10內傳送至包體20內。在藉由送風部41所傳送之氣體的量多於藉由送風部42所傳送之氣體的量之情況下,殼體10內之氣壓,係上升,在少於的情況下,殼體10內之氣壓,係下降。The first pressure regulating part 40 regulates the air pressure in the housing 10 . The first pressure regulating part 40 has air blowing parts 41 and 42. The air blowing part 41 transmits gas from the inside of the package body 20 to the inside of the casing 10 . The air blowing part 41 is, for example, a fan with a built-in filter (not shown), and sends the gas from which particles and the like have been removed into the casing 10 . The air blowing part 42 transmits gas from the casing 10 to the package body 20 . When the amount of gas delivered through the air blowing part 41 is greater than the amount of gas delivered through the air blowing part 42, the air pressure in the housing 10 rises. The air pressure is falling.
第二壓力調節部50,係調節包體20內之氣壓。第二壓力調節部50,係具有送風部43及排氣部52(第一排氣部)。送風部43,係使氣體在包體20內循環。排氣部52,係含有:管路L9;及擋板52a。管路L9,係將氣體從包體20內導引至排氣用之動力設備X。擋板52a,係被設置於管路L9,調節管路L9內之流路的開合度。當擋板52a之開合度上升時,則來自包體20內之排氣量增加而包體20內之氣壓下降,當擋板52a之開合度下降時,則來自包體20內之排氣量下降而包體20內之氣壓上升。The second pressure regulating part 50 regulates the air pressure in the bag body 20 . The second pressure regulating part 50 has an air blowing part 43 and an exhaust part 52 (first exhaust part). The air blowing part 43 circulates gas within the package body 20 . The exhaust part 52 includes: a pipeline L9; and a baffle 52a. Pipeline L9 guides gas from the package body 20 to the power equipment X for exhaust. The baffle 52a is provided in the pipeline L9 to adjust the opening and closing degree of the flow path in the pipeline L9. When the opening and closing degree of the baffle 52a increases, the exhaust volume from the package body 20 increases and the air pressure in the package body 20 decreases. When the opening and closing degree of the baffle 52a decreases, the exhaust volume from the package body 20 decreases. The air pressure in the package body 20 increases as it decreases.
排氣部51(第二排氣部),係具有管路L7,L8。管路L7(第三氣體管路),係將氣體從各液處理單元U1內之罩杯C導引至動力設備X。管路L8(第三氣體管路),係將氣體從各熱處理單元U2內之腔室導引至動力設備X。管路L7,L8,係將氣體導引至殼體10之側方(參閱圖3)。The exhaust part 51 (second exhaust part) has pipe lines L7 and L8. Pipeline L7 (third gas pipeline) guides gas from the cup C in each liquid processing unit U1 to the power equipment X. Pipeline L8 (third gas pipeline) guides gas from the chamber in each heat treatment unit U2 to the power equipment X. Pipes L7 and L8 guide the gas to the side of the housing 10 (see Figure 3).
複數個(例如2個)負載鎖室60,係被設置於包體20的周壁與載體區塊3之間。負載鎖室60,係含有:收容部61(載體收容部);門62,63;鎖固64(第二鎖固);開關驅動部65;及操作面板66。收容部61,係收容載體11。門62(第二門),係使負載鎖室60內向包體外開關。鎖固64,係例如電磁鎖固,對容許門62之開放的狀態(以下,稱為「解除狀態」。)與禁止門62之開放的狀態(以下,稱為「鎖固狀態」。)進行切換。A plurality of (for example, two) load lock chambers 60 are provided between the peripheral wall of the package body 20 and the carrier block 3 . The load lock chamber 60 includes: a storage part 61 (carrier storage part); doors 62, 63; a lock 64 (second lock); a switch driving part 65; and an operation panel 66. The accommodating part 61 stores the carrier 11 . Door 62 (second door) opens and closes the load lock chamber 60 from the inside to the outside of the package. The locking 64 is, for example, electromagnetic locking, and is performed between a state in which the opening of the door 62 is allowed (hereinafter referred to as the "released state") and a state in which the opening of the door 62 is prohibited (hereinafter referred to as the "locked state"). switch.
門63(第三門),係使收容部61內向包體20內開關。開關驅動部65(第三鎖固),係對容許門63之開放的狀態與禁止門63之開放的狀態進行切換。開關驅動部65,係含有門63之開關用的動力源(例如電動馬達),且亦進行門63之開關驅動。The door 63 (third door) opens and closes from the inside of the accommodating part 61 to the inside of the package body 20 . The switch driving unit 65 (third lock) switches the state in which the door 63 is allowed to open and the state in which the door 63 is prohibited from being opened. The switch driving unit 65 includes a power source (for example, an electric motor) for opening and closing the door 63, and also drives the door 63 to open and close.
操作面板66,係在包體20之外部空間側,被配置於門62的附近。操作面板66,係具有輸入部66a及顯示部66b(參閱圖4(b))。輸入部66a,係用於輸入門62的鎖固要求、門62的鎖固解除要求及載體11從收容部61朝載體區塊3的搬送要求等。顯示部66b,係用於顯示收容部61內有無載體11。The operation panel 66 is attached to the external space side of the package body 20 and is arranged near the door 62 . The operation panel 66 has an input part 66a and a display part 66b (see FIG. 4(b)). The input unit 66a is used to input a request for locking the door 62, a request for unlocking the door 62, a request for transporting the carrier 11 from the storage unit 61 to the carrier block 3, and the like. The display part 66b is used to display whether the carrier 11 is present in the accommodating part 61.
收授部67,係在載體區塊3與各負載鎖室60之間,進行載體11的收授。例如,收授部67,係具有搬送機械臂A3。搬送機械臂A3,係從收容部61內取出載體11而搬送至載體區塊3,並從載體區塊3接收載體11而搬送至收容部61內。The receiving and receiving unit 67 is located between the carrier block 3 and each load lock chamber 60 and performs receiving and receiving of the carrier 11 . For example, the receiving and receiving unit 67 has a transfer robot arm A3. The transport robot A3 takes out the carrier 11 from the accommodating part 61 and transports it to the carrier block 3 , and receives the carrier 11 from the carrier block 3 and transports it to the accommodating part 61 .
複數個(例如2個)第二空調部70,係分別調節複數個負載鎖室60內之氧濃度。各第二空調部70,係含有:管路L11,L12,L13,L14;閥71,72,73;及泵P。管路L11,係將氣體從包體20外導引至收容部61內。管路L12,係將氣體從包體20內導引至收容部61內。管路L13,係將氣體從收容部61內導引至管路L5。管路L14,係將氣體從收容部61內導引至動力設備X。A plurality of (for example, two) second air conditioning units 70 adjust the oxygen concentrations in a plurality of load lock chambers 60 respectively. Each second air conditioning unit 70 includes: pipelines L11, L12, L13, and L14; valves 71, 72, and 73; and a pump P. The pipeline L11 guides the gas from outside the package body 20 to the receiving part 61 . The pipeline L12 guides the gas from the package body 20 to the receiving part 61 . The pipeline L13 guides the gas from the containing part 61 to the pipeline L5. The pipeline L14 guides the gas from the accommodation part 61 to the power equipment X.
閥71,係被設置於管路L11,調節管路L11內之流路的開合度。閥72,係被設置於管路L12,調節管路L12內之流路的開合度。閥73,係被設置於管路L14,調節管路L14內之流路的開合度。泵P,係被設置於管路L13,將氣體從收容部61內壓送至管路L5。當在關閉閥71,73並開啟閥72的狀態下驅動泵P時,包體20內之氣體會流入收容部61內。當在關閉閥72而泵P停止的狀態下開啟閥71,73時,包體20外之氣體會流入收容部61內。如此一來,使包體20內外之氣體選擇性地流入收容部61內,藉此,調節收容部61內的氧濃度。The valve 71 is provided in the pipeline L11 and adjusts the opening and closing degree of the flow path in the pipeline L11. The valve 72 is provided in the pipeline L12 and adjusts the opening and closing degree of the flow path in the pipeline L12. The valve 73 is provided in the pipeline L14 and adjusts the opening and closing degree of the flow path in the pipeline L14. The pump P is provided in the pipe line L13, and pressurizes the gas from the accommodation part 61 to the pipe line L5. When the pump P is driven with the valves 71 and 73 closed and the valve 72 opened, the gas in the package 20 will flow into the receiving portion 61 . When the valves 71 and 73 are opened while the valve 72 is closed and the pump P is stopped, the gas outside the package 20 will flow into the accommodating portion 61 . In this way, the gas inside and outside the package body 20 selectively flows into the containing part 61, thereby adjusting the oxygen concentration in the containing part 61.
基板處理裝置1,係更具備有:氧濃度感測器D1~D6;揮發物濃度感測器D7;壓力感測器D8,D9;載體感測器D10;及門開關感測器D11。The substrate processing device 1 further includes: oxygen concentration sensors D1 to D6; a volatile concentration sensor D7; pressure sensors D8 and D9; a carrier sensor D10; and a door switch sensor D11.
氧濃度感測器D1(第一氧濃度感測器),係被設置於包體20內,計測包體20內的氧濃度。基板處理裝置1,係亦可在包體20內之複數個位置具備有氧濃度感測器D1。氧濃度感測器D2(第二氧濃度感測器),係被設置於殼體10內可向外部開放之空間。例如氧濃度感測器D2,係被設置於收授臂A1及搬送臂A2所致之晶圓W的搬送區域內。氧濃度感測器D3(第三氧濃度感測器),係被設置於回流部33內。例如,氧濃度感測器D3,係分別被設置於過濾器單元33a,33b,33c,33d的內部。基板處理裝置1,係亦可分別在過濾器單元33a,33b,33c,33d具備有複數個氧濃度感測器D3。氧濃度感測器D4(第四氧濃度感測器),係被設置於氣體供給部31內。例如氧濃度感測器D4,係亦可被配置於送風機31a內。基板處理裝置1,係亦可在送風機31a內具備有複數個氧濃度感測器D4。氧濃度感測器D5,係被設置於液處理單元U1之罩杯C內。氧濃度感測器D6(第五氧濃度感測器),係被設置於負載鎖室60之收容部61內。The oxygen concentration sensor D1 (first oxygen concentration sensor) is installed in the package body 20 and measures the oxygen concentration in the package body 20 . The substrate processing apparatus 1 may also be equipped with oxygen concentration sensors D1 at a plurality of positions within the package 20 . The oxygen concentration sensor D2 (second oxygen concentration sensor) is provided in a space open to the outside in the housing 10 . For example, the oxygen concentration sensor D2 is installed in the transfer area of the wafer W caused by the receiving arm A1 and the transfer arm A2. The oxygen concentration sensor D3 (third oxygen concentration sensor) is provided in the return part 33 . For example, the oxygen concentration sensors D3 are respectively provided inside the filter units 33a, 33b, 33c, and 33d. The substrate processing apparatus 1 may be provided with a plurality of oxygen concentration sensors D3 in the filter units 33a, 33b, 33c, and 33d respectively. The oxygen concentration sensor D4 (the fourth oxygen concentration sensor) is provided in the gas supply part 31 . For example, the oxygen concentration sensor D4 may also be disposed in the air blower 31a. The substrate processing apparatus 1 may be provided with a plurality of oxygen concentration sensors D4 in the air blower 31a. The oxygen concentration sensor D5 is installed in the cup C of the liquid treatment unit U1. The oxygen concentration sensor D6 (fifth oxygen concentration sensor) is provided in the receiving portion 61 of the load lock chamber 60 .
揮發物濃度感測器D7,係計測從液處理單元U1或熱處理單元U2流出至包體20內之揮發物的濃度(以下,稱為「包體20內之揮發物濃度」。)。揮發物濃度感測器D7,係被設置於排氣部52。The volatile matter concentration sensor D7 measures the concentration of volatile matter flowing out from the liquid treatment unit U1 or the heat treatment unit U2 into the package body 20 (hereinafter, referred to as "the volatile matter concentration in the package body 20"). The volatile matter concentration sensor D7 is provided in the exhaust part 52 .
壓力感測器D8,係被設置於殼體10內。計測殼體10內之壓力。壓力感測器D9,係被設置於包體20內,計測包體20內的壓力。The pressure sensor D8 is installed in the housing 10 . The pressure inside the housing 10 is measured. The pressure sensor D9 is installed in the package body 20 and measures the pressure in the package body 20 .
載體感測器D10,係被設置於負載鎖室60之收容部61內,檢測收容部61內有無載體11。門開關感測器D11,係檢測門21之開關狀態。門開關感測器D11,係在包體20內,被配置於門21的附近。門開關感測器D12,係檢測門62之開關狀態。門開關感測器D12,係在負載鎖室60之收容部61內,被配置於門62的附近。The carrier sensor D10 is installed in the receiving portion 61 of the load lock chamber 60 and detects whether the carrier 11 is present in the receiving portion 61 . The door switch sensor D11 detects the switch status of the door 21. The door switch sensor D11 is installed in the package body 20 and is arranged near the door 21 . The door switch sensor D12 detects the switch state of the door 62 . The door switch sensor D12 is located in the receiving portion 61 of the load lock chamber 60 and is arranged near the door 62 .
控制部100,係以使包體20內之氣壓保持低於包體20外之氣壓及殼體10內之氣壓的任一者之狀態的方式,控制第一壓力調節部40及第二壓力調節部50。控制部100,係亦可進一步執行如下述者:以將包體20內之氧濃度維持低於包體20外之氧濃度的方式,控制第一空調部30。例如,控制部100,係在將包體20內之氧濃度維持低於包體20外的氧濃度之際,以使從氣體供給部31被傳送至包體20內之氣體的氧濃度比包體20外之氧濃度更低的方式,控制濃度調節部32。The control unit 100 controls the first pressure regulator 40 and the second pressure regulator so that the air pressure inside the package body 20 is maintained lower than either the air pressure outside the package body 20 or the air pressure inside the casing 10 . Department 50. The control unit 100 may further perform the following steps: control the first air conditioning unit 30 in a manner to maintain the oxygen concentration inside the package 20 lower than the oxygen concentration outside the package 20 . For example, the control unit 100 maintains the oxygen concentration inside the package 20 lower than the oxygen concentration outside the package 20 so that the oxygen concentration of the gas sent from the gas supply unit 31 into the package 20 is lower than the oxygen concentration in the package 20 . The concentration adjustment unit 32 is controlled so that the oxygen concentration outside the body 20 is lower.
又,控制部100,係亦可進一步執行如下述者:以使從氣體供給部31被傳送至包體20內之氣體的氧濃度比包體20內之氧濃度更高的方式,控制濃度調節部32;及在氧濃度感測器D1所致之氧濃度的計測結果低於預定值的情況下,以禁止門21之開放的方式,控制鎖固22。 控制部100,係即便在氧濃度感測器D2所致之氧濃度的計測結果低於預定值的情況下、在氧濃度感測器D3所致之氧濃度的檢測結果低於預定值的情況下、在氧濃度感測器D4所致之氧濃度的檢測結果低於預定值的情況下或在揮發物濃度感測器D7所致之計測結果高於預定值的情況下,亦可以禁止門21之開放的方式,控制鎖固22。Furthermore, the control unit 100 may further control the concentration adjustment so that the oxygen concentration of the gas sent from the gas supply unit 31 into the package 20 is higher than the oxygen concentration in the package 20 . part 32; and when the measurement result of the oxygen concentration caused by the oxygen concentration sensor D1 is lower than a predetermined value, the lock 22 is controlled to prohibit the opening of the door 21. The control unit 100 is configured to operate when the measurement result of the oxygen concentration by the oxygen concentration sensor D2 is lower than a predetermined value and when the detection result of the oxygen concentration by the oxygen concentration sensor D3 is lower than the predetermined value. Next, when the detection result of the oxygen concentration caused by the oxygen concentration sensor D4 is lower than the predetermined value or when the measurement result caused by the volatile concentration sensor D7 is higher than the predetermined value, the door can also be prohibited. 21. Opening method, control locking 22.
而且,控制部100,係亦可執行如下述者:在門62的開放之前,以使收容部61內之氧濃度接近包體20外之氧濃度的方式,控制第二空調部70;在門63的開放之前,以使負載鎖室60內之氧濃度接近包體20內之氧濃度的方式,控制第二空調部70;在氧濃度感測器D6所致之計測結果低於預定值的情況下,以禁止門62之開放的方式,控制鎖固64;及在氧濃度感測器D6所致之測定結果高於預定值的情況下,以禁止門63之開放的方式,控制開關驅動部65。Moreover, the control unit 100 may also perform the following steps: before the door 62 is opened, the second air conditioning unit 70 is controlled in such a manner that the oxygen concentration in the accommodation part 61 is close to the oxygen concentration outside the package body 20; Before opening 63, the second air-conditioning unit 70 is controlled in such a way that the oxygen concentration in the load lock chamber 60 is close to the oxygen concentration in the package 20; when the measurement result caused by the oxygen concentration sensor D6 is lower than the predetermined value In this case, the lock 64 is controlled to prohibit the opening of the door 62; and when the measurement result caused by the oxygen concentration sensor D6 is higher than a predetermined value, the switch drive is controlled to prohibit the opening of the door 63. Department 65.
例如如圖5所示般,控制部100,係具有氣壓調節部101、第一氧濃度調節部102、第一鎖固控制部103、第二氧濃度調節部104、第二鎖固控制部105、搬送控制部106及第三鎖固控制部107作為功能上的構成(以下,稱「功能模組」。)。For example, as shown in FIG. 5 , the control unit 100 includes an air pressure adjustment unit 101 , a first oxygen concentration adjustment unit 102 , a first lock control unit 103 , a second oxygen concentration adjustment unit 104 , and a second lock control unit 105 , the transportation control unit 106 and the third locking control unit 107 serve as a functional configuration (hereinafter referred to as "functional module").
氣壓調節部101,係從壓力感測器D8取得殼體10內之氣壓資料,在殼體10內之氣壓低於目標氣壓的情況下,係以使從包體20內傳送至殼體10內之氣體之量增加的方式,控制送風部41。另外,在殼體10內之氣壓低於目標氣壓的情況下,氣壓調節部101,係亦可以使從殼體10內傳送至包體20內之氣體之量下降的方式,控制送風部42。殼體10內之氣壓的目標氣壓,係例如高於包體20內之氣壓數Pa左右的值。The air pressure regulating part 101 obtains the air pressure data in the casing 10 from the pressure sensor D8. When the air pressure in the casing 10 is lower than the target air pressure, it transmits it from the package 20 to the casing 10. The air supply part 41 is controlled in such a way that the amount of gas increases. In addition, when the air pressure in the casing 10 is lower than the target air pressure, the air pressure regulator 101 can also control the air blower 42 in a manner to reduce the amount of gas transmitted from the casing 10 to the package 20 . The target air pressure of the air pressure in the casing 10 is, for example, a value that is approximately several Pa higher than the air pressure in the package body 20 .
又,氣壓調節部101,係從壓力感測器D9取得殼體20內之氣壓資料,在包體20內之氣壓高於目標氣壓的情況下,係以使從包體20內被導引至動力設備X(排氣路徑)之氣體之量上升的方式,控制排氣部52。例如氣壓調節部101,係使擋板52a之開合度上升。包體20內之氣壓的目標氣壓,係低於包體20外之氣壓及殼體10內之氣壓的任一者之值。In addition, the air pressure regulator 101 obtains the air pressure data in the casing 20 from the pressure sensor D9, and when the air pressure in the package 20 is higher than the target air pressure, it is guided from the inside of the package 20 to The exhaust part 52 is controlled so that the amount of gas in the power equipment X (exhaust path) increases. For example, the air pressure regulator 101 increases the opening and closing degree of the shutter 52a. The target air pressure of the air pressure inside the package body 20 is a value lower than either the air pressure outside the package body 20 or the air pressure inside the casing 10 .
第一氧濃度調節部102,係以將包體20內之氧濃度維持低於包體20外之氧濃度的方式,控制第一空調部30。第一氧濃度調節部102,係基於從氧濃度感測器D1取得之包體20內之氧濃度的計測結果,以使從氣體供給部31被傳送至包體20內之氣體的氧濃度比包體20外之氧濃度更低的方式,控制濃度調節部32。又,第一氧濃度調節部102,係基於從第一鎖固控制部103取得之資訊,以使從氣體供給部31被傳送至包體20內之氣體的氧濃度比包體20內之氧濃度更高的方式,控制濃度調節部32。The first oxygen concentration adjustment unit 102 controls the first air conditioning unit 30 in a manner to maintain the oxygen concentration inside the package 20 lower than the oxygen concentration outside the package 20 . The first oxygen concentration adjustment unit 102 is based on the measurement result of the oxygen concentration in the package 20 obtained from the oxygen concentration sensor D1, so as to adjust the oxygen concentration ratio of the gas sent from the gas supply unit 31 to the package 20 The concentration adjustment unit 32 is controlled so that the oxygen concentration outside the package 20 is lower. In addition, the first oxygen concentration adjustment unit 102 is based on the information obtained from the first lock control unit 103 so that the oxygen concentration of the gas sent from the gas supply unit 31 to the package body 20 is higher than the oxygen concentration in the package body 20 . To achieve a higher concentration, the concentration adjustment unit 32 is controlled.
在降低從氣體供給部31被傳送至包體20內之氣體的氧濃度之情況下,第一氧濃度調節部102,係以使閥32a之開合度下降並使閥32b之開合度上升的方式,控制濃度調節部32。另一方面,在提高從氣體供給部31被傳送至包體20內之氣體的氧濃度之情況下,第一氧濃度調節部102,係以使閥32a之開合度上升並使閥32b之開合度下降的方式,控制濃度調節部32。When reducing the oxygen concentration of the gas sent from the gas supply part 31 into the package 20, the first oxygen concentration adjusting part 102 decreases the opening and closing degree of the valve 32a and increases the opening and closing degree of the valve 32b. , control the concentration adjustment unit 32. On the other hand, when the oxygen concentration of the gas sent from the gas supply part 31 into the package body 20 is increased, the first oxygen concentration adjustment part 102 increases the opening and closing degree of the valve 32a and opens the valve 32b. The concentration adjustment unit 32 is controlled so that the degree of closeness decreases.
第一鎖固控制部103,係基於有無對輸入部23a之鎖固解除的要求與氧濃度感測器D1~D4所致之計測結果與揮發物濃度感測器D7所致之計測結果,控制鎖固22。具體而言,第一鎖固控制部103,係在鎖固解除之要求被輸入至輸入部23a後,在氧濃度感測器D1所致之氧濃度的計測結果低於預定值的情況下,以禁止門21之開放的方式,控制鎖固22。第一鎖固控制部103,係即便在氧濃度感測器D2~D4所致之氧濃度的計測結果低於預定值的情況下,亦可以禁止門21之開放的方式,控制鎖固22。而且,第一鎖固控制部103,係即便在從揮發物濃度感測器D7取得之計測結果高於預定值的情況下,亦可以禁止門21之開放的方式,控制鎖固22。The first lock control unit 103 controls based on the presence or absence of a lock release request for the input unit 23a and the measurement results of the oxygen concentration sensors D1 to D4 and the measurement results of the volatile concentration sensor D7. Lock 22. Specifically, the first lock control unit 103, after the lock release request is input to the input unit 23a, when the measurement result of the oxygen concentration by the oxygen concentration sensor D1 is lower than a predetermined value, The lock 22 is controlled to prohibit the opening of the door 21 . The first lock control unit 103 can control the lock 22 so as to prohibit the opening of the door 21 even when the oxygen concentration measurement result of the oxygen concentration sensors D2 to D4 is lower than a predetermined value. Furthermore, the first lock control unit 103 can control the lock 22 so as to prohibit the opening of the door 21 even when the measurement result obtained from the volatile concentration sensor D7 is higher than a predetermined value.
第一鎖固控制部103,係在氧濃度感測器D1~D4所致之氧濃度的計測結果為預定值以上之狀態被保持預定時間以上,並且揮發物濃度感測器D7所致之揮發物濃度的計測結果為預定值以下之狀態被保持預定時間以上的情況下,以容許門21之開放的方式,控制鎖固22。氧濃度之上述預定值,係被設定為接近空氣中之氧濃度的值(例如19.5%)。揮發物濃度之上述預定值,係藉由揮發物的種類等而適當地設定。揮發物濃度之上述預定值,係例如5ppm。上述預定時間,係考慮計測結果的偏差等而適當地設定。上述預定時間,係例如1分鐘。The first locking control unit 103 maintains a state where the measurement results of the oxygen concentration by the oxygen concentration sensors D1 to D4 are equal to or higher than a predetermined value for a predetermined time or more, and the volatile matter concentration sensor D7 evaporates. When the measurement result of the substance concentration is below a predetermined value and is maintained for more than a predetermined time, the lock 22 is controlled to allow the opening of the door 21 . The above-mentioned predetermined value of the oxygen concentration is set to a value close to the oxygen concentration in the air (for example, 19.5%). The above-mentioned predetermined value of the volatile matter concentration is appropriately set depending on the type of volatile matter and the like. The above-mentioned predetermined value of the volatile matter concentration is, for example, 5 ppm. The above-mentioned predetermined time is appropriately set taking into account variations in measurement results and the like. The above predetermined time is, for example, 1 minute.
第二氧濃度調節部104,係在門62的開放之前,以使收容部61內之氧濃度接近包體20外之氧濃度的方式,控制第二空調部70。具體而言,第二氧濃度調節部104,係基於有無對輸入部66a之鎖固解除的要求,控制第二空調部70。The second oxygen concentration adjusting unit 104 controls the second air conditioning unit 70 before the door 62 is opened so that the oxygen concentration in the accommodating part 61 is close to the oxygen concentration outside the package 20 . Specifically, the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 based on whether there is a request to unlock the input unit 66a.
又,第二氧濃度調節部104,係在門63的開放之前,以使收容部61內之氧濃度接近殼體10內之氧濃度的方式,控制第二空調部70。具體而言,第二氧濃度調節部104,係基於有無對輸入部66a之載體11的搬送(從收容部61朝載體區塊3之搬送)要求,控制第二空調部70。In addition, the second oxygen concentration adjusting unit 104 controls the second air conditioning unit 70 so that the oxygen concentration in the accommodating part 61 is close to the oxygen concentration in the casing 10 before the door 63 is opened. Specifically, the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 based on the presence or absence of a request for transportation of the carrier 11 (transportation from the storage unit 61 to the carrier block 3 ) to the input unit 66 a.
第二鎖固控制部105,係基於有無對輸入部66a之鎖固解除的要求與氧濃度感測器D6所致之計測結果,控制鎖固64。具體而言,第二鎖固控制部105,係在鎖固解除之要求被輸入至輸入部66a後,在氧濃度感測器D6所致之計測結果低於預定值的情況下,以禁止門62之開放的方式,控制鎖固64。第二鎖固控制部105,係在氧濃度感測器D6所致之氧濃度的計測結果為預定值以上之狀態被保持預定時間以上的情況下,以禁止門62之開放的方式,控制鎖固64。氧濃度之上述預定值,係被設定為接近空氣中之氧濃度的值(例如19.5%)。上述預定時間,係考慮計測結果的偏差等而適當地設定。上述預定時間,係例如1分鐘。The second lock control unit 105 controls the lock 64 based on the presence or absence of a lock release request from the input unit 66a and the measurement result from the oxygen concentration sensor D6. Specifically, after the lock release request is input to the input unit 66a, the second lock control unit 105 prohibits the door when the measurement result caused by the oxygen concentration sensor D6 is lower than a predetermined value. The opening method of 62 controls the locking of 64. The second lock control unit 105 controls the lock to prohibit the opening of the door 62 when the measurement result of the oxygen concentration by the oxygen concentration sensor D6 is above a predetermined value and is maintained for more than a predetermined time. Solid 64. The above-mentioned predetermined value of the oxygen concentration is set to a value close to the oxygen concentration in the air (for example, 19.5%). The above-mentioned predetermined time is appropriately set taking into account variations in measurement results and the like. The above predetermined time is, for example, 1 minute.
搬送控制部106,係基於有無對輸入部66a之載體的搬送要求與載體感測器D10所致之檢測結果與載體區塊3中有無搬出對象的載體11,以在收容部61內與載體區塊3之間搬送載體11的方式,控制開關驅動部65及搬送機械臂A3。具體而言,搬送控制部106,係在載體11之搬送要求被輸入至輸入部66a的情況下,以將收容部61內之載體11搬送至載體區塊3的方式,控制搬送機械臂A3,並配合於此,以使門63開關的方式,控制開關驅動部65。又,搬送控制部106,係當在載體區塊3存在搬出對象之載體11的情況下,以將搬出對象之載體11從載體區塊3搬送至收容部61內的方式,控制搬送機械臂A3,並配合於此,以使門63開關的方式,控制開關驅動部65。此時,搬送控制部106,係藉由載體感測器D10,將未檢測到載體11之收容部61選擇作為載體11的搬送終點。The transport control unit 106 determines whether there is a carrier transport request to the input unit 66a, the detection result of the carrier sensor D10, and the presence or absence of the carrier 11 to be transported in the carrier block 3, so that the carrier 11 in the storage unit 61 and the carrier area To transport the carrier 11 between the blocks 3, the switch drive unit 65 and the transport robot arm A3 are controlled. Specifically, when the transportation request of the carrier 11 is input to the input unit 66a, the transportation control unit 106 controls the transportation robot A3 so that the carrier 11 in the storage unit 61 is transported to the carrier block 3. In conjunction with this, the switch driving unit 65 is controlled to open and close the door 63 . Furthermore, when the carrier 11 to be carried out exists in the carrier block 3 , the transport control unit 106 controls the transport robot arm A3 so that the carrier 11 to be carried out is transported from the carrier block 3 into the accommodating part 61 , and in cooperation with this, the switch driving unit 65 is controlled to open and close the door 63 . At this time, the transportation control unit 106 uses the carrier sensor D10 to select the storage portion 61 where the carrier 11 has not been detected as the transportation destination of the carrier 11 .
又,搬送控制部106,係基於從載體感測器D10取得之負載鎖室60內有無載體11的檢測結果,以顯示該檢測結果的方式,控制顯示部66b。例如,搬送控制部106,係在載體感測器D10檢測到收容部61內之載體11的情況下,使對應於該收容部61的顯示部66b點亮,在載體感測器D10未檢測到收容部61內之載體11的情況下,使對應於該收容部61的顯示部66b熄滅。Furthermore, the transport control unit 106 controls the display unit 66b to display the detection result based on the detection result of the presence or absence of the carrier 11 in the load lock chamber 60 obtained from the carrier sensor D10. For example, when the carrier sensor D10 detects the carrier 11 in the accommodating part 61, the transport control part 106 lights up the display part 66b corresponding to the accommodating part 61. If the carrier sensor D10 does not detect the carrier 11, In the case of the carrier 11 in the accommodating part 61, the display part 66b corresponding to the accommodating part 61 is turned off.
第三鎖固控制部107,係在氧濃度感測器D6所致之測定結果高於預定值的情況下,以禁止門63之開放的方式,經由搬送控制部106控制開關驅動部65。第三鎖固控制部107,係在氧濃度感測器D6所致之氧濃度的計測結果為預定值以下之狀態被保持預定時間以上的情況下,以容許門63之開放的方式,經由搬送控制部106控制開關驅動部65。氧濃度之上述預定值,係被設定為與包體20內之氧濃度的目標值相同。上述預定時間,係考慮計測結果的偏差等而適當地設定。上述預定時間,係例如1分鐘。The third locking control unit 107 controls the switch driving unit 65 via the transport control unit 106 to prohibit the opening of the door 63 when the measurement result of the oxygen concentration sensor D6 is higher than a predetermined value. When the measurement result of the oxygen concentration by the oxygen concentration sensor D6 is below a predetermined value and the state is maintained for more than a predetermined time, the third lock control unit 107 allows the opening of the door 63 via the conveyor. The control unit 106 controls the switch driving unit 65 . The above-mentioned predetermined value of the oxygen concentration is set to be the same as the target value of the oxygen concentration in the package 20 . The above-mentioned predetermined time is appropriately set taking into account variations in measurement results and the like. The above predetermined time is, for example, 1 minute.
控制部100,係藉由一個或複數個控制用電腦所構成。例如,如圖6所示般,控制部100,係具有電路91。電路91,係具有一個或複數個處理器92、記憶體93、儲存器94、輸出入埠95及計時器96。輸出入埠95,係在閥32a,32b、送風部41、送風部42、排氣部52、鎖固22、閥71,72,73、泵P、鎖固64、開關驅動部65、搬送機械臂A3,氧濃度感測器D1~D4、揮發物濃度感測器D7、壓力感測器D8,D9、輸入部23a、氧濃度感測器D6、載體感測器D10、門開關感測器D11、輸入部66a及顯示部66b等之間進行電信號之輸出入。計時器96,係例如以計數固定週期之基準脈衝的方式,計測經過時間。The control unit 100 is composed of one or a plurality of control computers. For example, as shown in FIG. 6 , the control unit 100 includes a circuit 91 . The circuit 91 has one or a plurality of processors 92, a memory 93, a storage 94, an input/output port 95 and a timer 96. The input/output port 95 is connected to the valves 32a and 32b, the air supply part 41, the air supply part 42, the exhaust part 52, the lock 22, the valves 71, 72, 73, the pump P, the lock 64, the switch driving part 65, and the conveying machine Arm A3, oxygen concentration sensors D1~D4, volatile matter concentration sensor D7, pressure sensors D8, D9, input part 23a, oxygen concentration sensor D6, carrier sensor D10, door switch sensor Electrical signals are input and output between D11, the input unit 66a, the display unit 66b, and the like. The timer 96 measures the elapsed time by counting reference pulses of a fixed period, for example.
儲存器94,係例如具有硬碟等、可藉由電腦讀取之記錄媒體。記憶媒體,係記錄用以構成各功能模組之程式。記憶媒體,係亦可為非揮發性之半導體記憶體、磁碟及光碟等的可取出之媒體。記憶體93,係暫時記錄從儲存器94之記憶媒體載入的程式及處理器92所致之演算結果。處理器92,係藉由與記憶體93協作執行上述程式的方式,構成各功能模組。The storage 94 is a recording medium that can be read by a computer, such as a hard disk. The memory medium records the programs used to constitute each functional module. Memory media can also be removable media such as non-volatile semiconductor memory, magnetic disks, and optical disks. The memory 93 temporarily records the program loaded from the memory medium of the storage 94 and the calculation result caused by the processor 92 . The processor 92 forms each functional module by cooperating with the memory 93 to execute the above program.
此外,控制器100之硬體構成,係不一定被限定於藉由程式構成各功能模組者。例如,控制器100之各功能模組,係亦可藉由專用之邏輯電路或整合了此邏輯電路之ASIC(Application Specific Integrated Circuit)所構成。In addition, the hardware structure of the controller 100 is not necessarily limited to the one in which each functional module is composed of a program. For example, each functional module of the controller 100 can also be composed of a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) integrating the logic circuit.
[基板處理方法] 接著,說明基板處理裝置1執行之基板處理的內容作為基板處理方法之一例。該基板處理,係含有塗佈裝置2中之基板處理、附隨於該基板處理而執行之空調處理、載體朝包體20之搬入處理及載體11從包體20的搬出處理。以下,說明各處理之程序。[Substrate processing method] Next, the contents of the substrate processing performed by the substrate processing apparatus 1 will be described as an example of the substrate processing method. The substrate processing includes substrate processing in the coating device 2 , air conditioning processing performed accompanying the substrate processing, loading processing of the carrier into the package body 20 , and unloading processing of the carrier 11 from the package body 20 . The procedures for each processing are explained below.
(基板處理程序) 塗佈裝置2,係以接下來之程序執行基板處理。首先,收授臂A1將載體11內之晶圓W搬送至棚架單元U10。其次,搬送臂A2將棚架單元U10之晶圓W搬送至液處理單元U1,液處理單元U1對該晶圓W施予塗佈處理。其次,搬送臂A2將晶圓W從液處理單元U1搬送至熱處理單元U2,熱處理單元U2對該晶圓W施予熱處理。其次,搬送臂A2將晶圓W從熱處理單元U2搬送至棚架單元U10,收授臂A1使該晶圓W從棚架單元U10返回到載體11內。藉由以上,完成對於一片晶圓W之塗佈處理及熱處理。(Substrate processing program) The coating device 2 performs substrate processing in the next step. First, the receiving and receiving arm A1 transports the wafer W in the carrier 11 to the rack unit U10. Next, the transfer arm A2 transfers the wafer W from the rack unit U10 to the liquid processing unit U1, and the liquid processing unit U1 applies a coating process to the wafer W. Next, the transfer arm A2 transfers the wafer W from the liquid processing unit U1 to the heat treatment unit U2, and the heat treatment unit U2 performs heat treatment on the wafer W. Next, the transfer arm A2 transfers the wafer W from the thermal processing unit U2 to the rack unit U10, and the receiving and receiving arm A1 returns the wafer W from the rack unit U10 to the carrier 11. Through the above, the coating process and heat treatment for one wafer W are completed.
(空調處理) 圖7,係表示空調處理程序的流程圖。首先,控制器100,係執行步驟S01。在步驟S01中,係由第一氧濃度調節部102確認門21為鎖固狀態(門21被關閉,並藉由鎖固22禁止門21之開放的狀態)的情形。在門21並非鎖固狀態的情況下,第一氧濃度調節部102,係待機至門21成為鎖固狀態。(air conditioning treatment) Fig. 7 is a flowchart showing the air conditioning processing procedure. First, the controller 100 executes step S01. In step S01, the first oxygen concentration adjustment unit 102 confirms that the door 21 is in a locked state (a state in which the door 21 is closed and the opening of the door 21 is prohibited by the lock 22). When the door 21 is not in the locked state, the first oxygen concentration adjustment unit 102 waits until the door 21 becomes the locked state.
在門21成為鎖固狀態後,控制部100,係執行步驟S02。在步驟S02中,係第一氧濃度調節部102以開始將包體20內的氧濃度維持低於包體20外的氧濃度之循環處理的方式,控制第一空調部30(例如濃度調節部32)。具體而言,第一氧濃度調節部102,係以使閥32a之開合度下降(例如關閉閥32a)並使閥32b之開合度上升的方式,控制濃度調節部32,且以開始各送風機f所致之氣體之壓送的方式,控制第一空調部30。After the door 21 enters the locked state, the control unit 100 executes step S02. In step S02, the first oxygen concentration adjustment unit 102 controls the first air conditioning unit 30 (for example, the concentration adjustment unit) in a manner to start a cycle process of maintaining the oxygen concentration inside the package 20 lower than the oxygen concentration outside the package 20. 32). Specifically, the first oxygen concentration adjustment unit 102 controls the concentration adjustment unit 32 to decrease the opening degree of the valve 32a (for example, close the valve 32a) and increase the opening degree of the valve 32b, and to start each air blower f. The resulting gas pressure delivery method controls the first air conditioning unit 30 .
接著,控制器100,係依序執行步驟S03,S04。在步驟S03中,氣壓調節部101從壓力感測器D8取得殼體10內的氣壓資料,並且從壓力感測器D9取得包體20內的氣壓資料。在步驟S04中,氣壓調節部101基於在步驟S03所取得之氣壓資料,判定包體20內的氣壓是否為目標氣壓以下。Next, the controller 100 executes steps S03 and S04 in sequence. In step S03, the air pressure regulator 101 obtains the air pressure data in the housing 10 from the pressure sensor D8, and obtains the air pressure data in the package body 20 from the pressure sensor D9. In step S04, the air pressure regulator 101 determines whether the air pressure in the package body 20 is lower than the target air pressure based on the air pressure data obtained in step S03.
在步驟S04中,在包體20內之氣壓被判定為非目標氣壓以下的情況下,控制部100,係執行步驟S05。在步驟S05中,氣壓調節部101以使擋板52a之開合度上升的方式,控制排氣部52。In step S04, when the air pressure in the package body 20 is determined to be less than the non-target air pressure, the control unit 100 executes step S05. In step S05, the air pressure regulator 101 controls the exhaust unit 52 to increase the opening and closing degree of the damper 52a.
其次,控制部100,係執行步驟S06。在步驟S04中,在包體20內之氣壓被判定為目標氣壓以下的情況下,控制部100,係執行步驟S06而不執行步驟S05。在步驟S06中,氣壓調節部101判定殼體10內之氣壓是否為目標氣壓以上。Next, the control unit 100 executes step S06. In step S04, when the air pressure in the package body 20 is determined to be less than the target air pressure, the control unit 100 executes step S06 without executing step S05. In step S06, the air pressure regulator 101 determines whether the air pressure in the casing 10 is equal to or higher than the target air pressure.
在步驟S06中,在殼體10內之氣壓被判定為非目標氣壓以上的情況下,控制部100,係依序執行步驟S07,S08。在步驟S07中,氣壓調節部101以使從包體20內傳送至殼體10內之氣體之量增加的方式,控制送風部41。在步驟S08中,氣壓調節部101以使從殼體10內傳送至包體20內之氣體之量下降的方式,控制送風部42。另外,控制部100,係亦可更換步驟S07,S08的順序來執行,且亦可並行S07,S08的順序來執行。抑或,控制部100,係亦可僅執行步驟S07,S08中之任一方。In step S06, when the air pressure inside the casing 10 is determined to be above the non-target air pressure, the control unit 100 sequentially executes steps S07 and S08. In step S07 , the air pressure regulator 101 controls the air blower 41 so as to increase the amount of gas transmitted from the package body 20 to the casing 10 . In step S08 , the air pressure regulator 101 controls the air blower 42 so that the amount of gas transferred from the casing 10 to the package 20 is reduced. In addition, the control unit 100 may change the order of steps S07 and S08, or may execute steps S07 and S08 in parallel. Alternatively, the control unit 100 may only execute any one of steps S07 and S08.
其次,控制部100,係依序執行步驟S09,S10。在步驟S06中,在殼體10內之氣壓被判定為目標氣壓以上的情況下,控制部100,係執行步驟S09,S10而不執行步驟S07,S08。在步驟S09中,第一氧濃度調節部102從氧濃度感測器D1取得包體20內之氧濃度的計測結果。在步驟S10中,第一氧濃度調節部102基於在步驟S09所取得之計測結果,判定包體20內的氧濃度是否低於預定值。Next, the control unit 100 sequentially executes steps S09 and S10. In step S06, when the air pressure in the casing 10 is determined to be equal to or higher than the target air pressure, the control unit 100 executes steps S09 and S10 without executing steps S07 and S08. In step S09, the first oxygen concentration adjustment unit 102 obtains the measurement result of the oxygen concentration in the package 20 from the oxygen concentration sensor D1. In step S10 , the first oxygen concentration adjustment unit 102 determines whether the oxygen concentration in the package 20 is lower than a predetermined value based on the measurement result obtained in step S09 .
在步驟S10中,在包體20內之氧濃度被判定為高於預定值的情況下,控制部100,係執行步驟S11。在步驟S11中,第一氧濃度調節部102以使閥32b之開合度上升的方式,控制第一空調部30。另外,第一氧濃度調節部102,係亦可以使閥32a之開合度下降的方式,控制第一空調部30。In step S10, when the oxygen concentration in the package body 20 is determined to be higher than the predetermined value, the control unit 100 executes step S11. In step S11, the first oxygen concentration adjustment unit 102 controls the first air conditioning unit 30 to increase the opening and closing degree of the valve 32b. In addition, the first oxygen concentration adjusting unit 102 may control the first air conditioning unit 30 by reducing the opening and closing degree of the valve 32a.
其次,控制部100,係執行步驟S12。在步驟S12中,第一氧濃度調節部102判定從輸入部23a是否存在門21之鎖固解除的要求。Next, the control unit 100 executes step S12. In step S12, the first oxygen concentration adjustment unit 102 determines whether there is a request to unlock the door 21 from the input unit 23a.
在步驟S12中,在被判定為從輸入部23a不存在門21之鎖固解除的要求之情況下,控制部100,係使處理返回到步驟S02。以後,在步驟S12中,直至被判定為存在門21之鎖固解除的要求之前,控制部100,係繼續殼體10內及包體20內之壓力調節與包體20內之氧濃度的調節。In step S12, when it is determined that there is no request to unlock the door 21 from the input unit 23a, the control unit 100 returns the process to step S02. Thereafter, in step S12, until it is determined that there is a request to unlock the door 21, the control unit 100 continues to adjust the pressure in the casing 10 and the package 20 and the oxygen concentration in the package 20. .
在步驟S12中,在被判定為從輸入部23a不存在門21之鎖固解除的要求之情況下,控制部100,係執行步驟S13。在步驟S13中,控制部100,係執行第一鎖固解除處理。第一鎖固解除處理之具體內容,係如後述。藉由以上,完成空調處理程序。In step S12, when it is determined that there is no request to unlock the door 21 from the input unit 23a, the control unit 100 executes step S13. In step S13, the control unit 100 executes the first lock release process. The specific content of the first lock release process is as described later. With the above, the air conditioning processing procedure is completed.
圖8,係表示第一鎖固解除處理程序的流程圖。如圖8所示般,控制器100,係首先執行步驟S101。在步驟S101中,第一氧濃度調節部102以開始使包體20內的氧濃度上升之處理的方式,控制濃度調節部32及排氣部52。例如第一氧濃度調節部102,係以使閥32a之開合度上升並使閥32b之開合度下降(例如關閉閥32b)的方式,控制濃度調節部32,且以使擋板52a之開合度上升的方式,控制排氣部52。FIG. 8 is a flowchart showing the first lock release processing program. As shown in Figure 8, the controller 100 first executes step S101. In step S101, the first oxygen concentration adjustment unit 102 controls the concentration adjustment unit 32 and the exhaust unit 52 so as to start the process of increasing the oxygen concentration in the package body 20. For example, the first oxygen concentration adjustment unit 102 controls the concentration adjustment unit 32 to increase the opening degree of the valve 32a and decrease the opening degree of the valve 32b (for example, closing the valve 32b), and to increase the opening degree of the damper 52a. The exhaust part 52 is controlled in an ascending manner.
其次,控制部100,係依序執行步驟S102,S103。在步驟S102中,第一氧濃度調節部102從氧濃度感測器D1~D4取得包體20內之氧濃度的計測結果。在步驟S103中,第一氧濃度調節部102基於在步驟S102所取得之計測結果,判定氧濃度感測器D1~D4之計測結果中是否存在預定值以下的值。Next, the control unit 100 sequentially executes steps S102 and S103. In step S102, the first oxygen concentration adjustment unit 102 obtains the measurement results of the oxygen concentration in the package 20 from the oxygen concentration sensors D1 to D4. In step S103, the first oxygen concentration adjustment unit 102 determines whether the measurement results of the oxygen concentration sensors D1 to D4 include values below a predetermined value based on the measurement results obtained in step S102.
在步驟S103中,在被判定為氧濃度感測器D1~D4之計測結果中存在預定值以下的值之情況下,控制部100,係使處理返回到步驟S102。以後,直至氧濃度感測器D1~D4之計測結果中變得不存在預定值以下的值之前,重複確認氧濃度感測器D1~D4的計測結果。In step S103, when it is determined that the measurement results of the oxygen concentration sensors D1 to D4 include a value below a predetermined value, the control unit 100 returns the process to step S102. Thereafter, the measurement results of the oxygen concentration sensors D1 to D4 are repeatedly confirmed until the measurement results of the oxygen concentration sensors D1 to D4 no longer have a value below the predetermined value.
在步驟S103中,在被判定為氧濃度感測器D1~D4之計測結果中不存在預定值以下的值之情況下,控制部100,係依序執行步驟S104,S105。在步驟S104中,第一氧濃度調節部102從揮發物濃度感測器D7取得包體20內之揮發物濃度的計測結果。在步驟S105中,第一氧濃度調節部102判定揮發物濃度感測器D7之計測結果是否為預定值以下。In step S103, when it is determined that the measurement results of the oxygen concentration sensors D1 to D4 do not have a value below the predetermined value, the control unit 100 sequentially executes steps S104 and S105. In step S104, the first oxygen concentration adjustment unit 102 obtains the measurement result of the volatile concentration in the package 20 from the volatile concentration sensor D7. In step S105, the first oxygen concentration adjustment unit 102 determines whether the measurement result of the volatile matter concentration sensor D7 is equal to or less than a predetermined value.
在步驟S105中,在揮發物濃度感測器D7之計測結果被判定為高於預定值的情況下,控制部100,係使處理返回到步驟S104。以後,直至揮發物濃度感測器D7的計測結果成為預定值以下之前,重複確認揮發物濃度感測器D7的計測結果。In step S105, when the measurement result of the volatile concentration sensor D7 is determined to be higher than the predetermined value, the control unit 100 returns the process to step S104. Thereafter, the measurement result of the volatile matter concentration sensor D7 is repeatedly checked until the measurement result of the volatile matter concentration sensor D7 becomes the predetermined value or less.
在步驟S105中,在揮發物濃度感測器D7之計測結果被判定為預定值以下的情況下,控制部100,係執行步驟S106。在步驟S106中,第一鎖固控制部103以容許門21之開放的方式,控制鎖固22。藉由以上,可完成第一鎖固解除處理,並開放門21。藉此,作業員等可進入包體20內而進行維護工作。In step S105, when the measurement result of the volatile matter concentration sensor D7 is determined to be less than the predetermined value, the control unit 100 executes step S106. In step S106, the first lock control unit 103 controls the lock 22 to allow the door 21 to be opened. Through the above, the first lock release process can be completed, and the door 21 can be opened. Thereby, operators can enter the package body 20 to perform maintenance work.
(載體之搬入處理程序) 圖9及圖10,係表示載體搬入處理程序的流程圖。首先,控制器100,係執行步驟S21。在步驟S21中,第二鎖固控制部105待機至門62之鎖固解除的要求被輸入於輸入部66a。(Carrier import processing procedure) 9 and 10 are flowcharts showing the carrier loading processing procedure. First, the controller 100 executes step S21. In step S21, the second lock control unit 105 waits until a request to unlock the door 62 is input to the input unit 66a.
在步驟S21中,在從輸入部66a存在了門62之鎖固解除的要求後,控制部100,係依序執行步驟S22,S23。在步驟S22中,第二氧濃度調節部104以開始使負載鎖室60內的氧濃度接近包體20外的氧濃度之處理的方式,控制第二空調部70。第二氧濃度調節部104,係以使閥71之開合度上升並使閥72之開合度下降(例如關閉閥72)且使閥73之開合度上升的方式,控制第二空調部70。在步驟S23中,第二鎖固控制部105判定從氧濃度感測器D6取得之負載鎖室60內之氧濃度的計測結果是否為預定值以上。In step S21, after there is a request to unlock the door 62 from the input unit 66a, the control unit 100 sequentially executes steps S22 and S23. In step S22 , the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 so as to start a process of bringing the oxygen concentration inside the load lock chamber 60 close to the oxygen concentration outside the package 20 . The second oxygen concentration adjusting unit 104 controls the second air conditioning unit 70 so as to increase the opening degree of the valve 71, decrease the opening degree of the valve 72 (for example, close the valve 72), and increase the opening degree of the valve 73. In step S23, the second lock control unit 105 determines whether the measurement result of the oxygen concentration in the load lock chamber 60 obtained from the oxygen concentration sensor D6 is equal to or higher than a predetermined value.
在步驟S23中,在氧濃度感測器D6之計測結果被判定為低於預定值的情況下,控制部100,係使處理返回到步驟S22。以後,直至氧濃度感測器D6的計測結果成為預定值以上之前,重複確認氧濃度感測器D6的計測結果。In step S23, when the measurement result of the oxygen concentration sensor D6 is determined to be lower than the predetermined value, the control unit 100 returns the process to step S22. Thereafter, the measurement result of the oxygen concentration sensor D6 is repeatedly checked until the measurement result of the oxygen concentration sensor D6 becomes a predetermined value or more.
在步驟S23中,在氧濃度感測器D6之計測結果被判定為預定值以上的情況下,控制部100,係執行步驟S24。在步驟S24中,第二氧濃度調節部104以停止使負載鎖室60內的氧濃度上升之處理的方式,控制第二空調部70。例如,第二氧濃度調節部104,係以關閉閥71、閥72及閥73的方式,控制第二空調部70。In step S23, when the measurement result of the oxygen concentration sensor D6 is determined to be equal to or greater than the predetermined value, the control unit 100 executes step S24. In step S24, the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 so as to stop the process of increasing the oxygen concentration in the load lock chamber 60. For example, the second oxygen concentration adjusting unit 104 controls the second air conditioning unit 70 to close the valve 71 , the valve 72 and the valve 73 .
其次,控制部100,係執行步驟S25。在步驟S25中,第二鎖固控制部105以將鎖固狀態(門62被關閉,並藉由鎖固64禁止門62之開放的狀態)切換成解除狀態(門62被關閉,並未藉由鎖固64禁止門62之開放的狀態)並容許門62之開放的方式,控制鎖固64。Next, the control unit 100 executes step S25. In step S25, the second lock control unit 105 switches the locked state (a state in which the door 62 is closed and the opening of the door 62 is prohibited by the lock 64) to the unlocked state (the door 62 is closed and is not opened by the lock 64). The lock 64 is controlled in such a manner that the lock 64 prohibits the opening of the door 62 and allows the opening of the door 62 .
其次,控制部100,係執行步驟S26。在步驟S26中,搬送控制部106待機至載體11搬入收容部61內。具體而言,搬送控制部106,係待機至收容部61內之載體感測器D10檢測到載體11。Next, the control unit 100 executes step S26. In step S26, the transport control unit 106 waits until the carrier 11 is loaded into the accommodating unit 61. Specifically, the transport control unit 106 waits until the carrier sensor D10 in the storage unit 61 detects the carrier 11 .
當收容部61內之載體感測器D10檢測到載體11時,控制部100,係執行步驟S27。在步驟S27中,搬送控制部106以顯示負載鎖室60內存在載體11之要旨的方式,控制顯示部65b。When the carrier sensor D10 in the receiving part 61 detects the carrier 11, the control part 100 executes step S27. In step S27, the transportation control unit 106 controls the display unit 65b to display that the carrier 11 is present in the load lock chamber 60.
如圖10所示般,控制器100,係接著執行步驟S28。在步驟S28中,搬送控制部106待機至載體11之搬送的要求被輸入於輸入部65a。As shown in Figure 10, the controller 100 then executes step S28. In step S28, the transportation control unit 106 waits until a request for transportation of the carrier 11 is input to the input unit 65a.
當載體11之搬送的要求被輸入時,控制部100,係依序執行步驟S29,S30。在步驟S29中,第二鎖固控制部105確認門62被關閉。具體而言,第二鎖固控制部105,係確認門開關感測器D11檢測到門62被關閉。在門62未被關閉的情況下,第二鎖固控制部105,係待機至門62被關閉。When a request to transport the carrier 11 is input, the control unit 100 sequentially executes steps S29 and S30. In step S29, the second lock control unit 105 confirms that the door 62 is closed. Specifically, the second lock control unit 105 confirms that the door switch sensor D11 detects that the door 62 is closed. When the door 62 is not closed, the second lock control unit 105 waits until the door 62 is closed.
其次,控制部100,係執行步驟S30。在步驟S30中,第二鎖固控制部105以將解除狀態切換成鎖固狀態並禁止門62之開放的方式,控制鎖固64。Next, the control unit 100 executes step S30. In step S30, the second lock control unit 105 controls the lock 64 to switch the unlocked state to the locked state and prohibit the opening of the door 62.
其次,控制部100,係依序執行步驟S31,S32。在步驟S31中,第二氧濃度調節部104以開始使負載鎖室60內的氧濃度下降之處理的方式,控制第二空調部70。第二氧濃度調節部104,係以使閥71之開合度下降(例如關閉閥71)並使閥72之開合度上升,且以使閥73之開合度下降(例如關閉閥73)並開始泵P所致之氣體之壓送的方式,控制第二空調部70。在步驟S32中,第三鎖固控制部107判定從氧濃度感測器D6取得之負載鎖室60內之氧濃度的計測結果是否為預定值以下。Next, the control unit 100 sequentially executes steps S31 and S32. In step S31, the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 so as to start a process of lowering the oxygen concentration in the load lock chamber 60. The second oxygen concentration adjusting unit 104 decreases the opening degree of the valve 71 (for example, closes the valve 71), increases the opening degree of the valve 72, and decreases the opening degree of the valve 73 (for example, closes the valve 73) to start the pump. The method of pressurizing the gas caused by P controls the second air conditioning unit 70 . In step S32, the third lock control unit 107 determines whether the measurement result of the oxygen concentration in the load lock chamber 60 obtained from the oxygen concentration sensor D6 is equal to or less than a predetermined value.
在步驟S32中,在氧濃度感測器D6之計測結果被判定為高於預定值的情況下,控制部100,係使處理返回到步驟S31。以後,直至氧濃度感測器D6的計測結果成為預定值以上之前,重複確認氧濃度感測器D6的計測結果。In step S32, when the measurement result of the oxygen concentration sensor D6 is determined to be higher than the predetermined value, the control unit 100 returns the process to step S31. Thereafter, the measurement result of the oxygen concentration sensor D6 is repeatedly checked until the measurement result of the oxygen concentration sensor D6 becomes a predetermined value or more.
在步驟S32中,在氧濃度感測器D6之計測結果被判定為預定值以下的情況下,控制部100,係執行步驟S33。在步驟S33中,第二氧濃度調節部104以停止負載鎖室60內之氧濃度的下降處理之方式,控制第二空調部70。例如第二氧濃度調節部104,係以將開合度設成為0的方式,關閉閥71、閥72及閥73,並以使泵P所致之氣體之壓送停止的方式,控制第二空調部70。In step S32, when the measurement result of the oxygen concentration sensor D6 is determined to be less than the predetermined value, the control unit 100 executes step S33. In step S33, the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 so as to stop the reduction process of the oxygen concentration in the load lock chamber 60. For example, the second oxygen concentration adjustment unit 104 controls the second air conditioner to close the valve 71, the valve 72, and the valve 73 so that the opening and closing degree is set to 0, and to stop the pressure feeding of gas by the pump P. Department 70.
其次,控制部100,係依序執行步驟S34,S35,S36。在步驟S34中,第三鎖固控制部107將鎖固狀態切換成解除狀態,搬送控制部106以開啟門63的方式,控制開關驅動部65。在步驟S35中,搬送控制部106以將負載鎖室60內之載體11搬送至載體區塊3的方式,控制搬送機械臂A3。在步驟S36中,搬送控制部106以顯示負載鎖室60內不存在載體11的方式,控制顯示部65b。例如搬送控制部106,係以從點亮狀態切換成熄滅狀態的方式,控制顯示部65b。Next, the control unit 100 sequentially executes steps S34, S35, and S36. In step S34, the third locking control unit 107 switches the locking state to the unlocked state, and the transportation control unit 106 controls the switch driving unit 65 to open the door 63. In step S35 , the transport control unit 106 controls the transport robot arm A3 to transport the carrier 11 in the load lock chamber 60 to the carrier block 3 . In step S36, the transportation control unit 106 controls the display unit 65b so as to display that the carrier 11 is not present in the load lock chamber 60. For example, the transport control unit 106 controls the display unit 65b so as to switch from the lighting state to the off state.
其次,控制部100,係執行步驟S37。在步驟S37中,搬送控制部106以關閉門63的方式,控制開關驅動部65,第三鎖固控制部107將解除狀態切換成鎖固狀態。藉由以上,完成載體搬入處理。Next, the control unit 100 executes step S37. In step S37, the transport control unit 106 controls the switch drive unit 65 to close the door 63, and the third lock control unit 107 switches the unlocked state to the locked state. Through the above, the carrier loading process is completed.
(載體之搬出處理程序) 圖11及圖12,係表示載體搬出處理程序的流程圖。如圖11所示般,控制器100,係首先執行步驟S41。在步驟S41中,第二氧濃度調節部104待機直至被設置於載體區塊3之載體11成為取出對象。取出對象之載體11,係指例如完成所收容之所有晶圓W的塗佈處理之載體11。(Carrier removal process) 11 and 12 are flowcharts showing the carrier unloading processing procedure. As shown in Fig. 11, the controller 100 first executes step S41. In step S41, the second oxygen concentration adjustment unit 104 waits until the carrier 11 provided in the carrier block 3 becomes a removal target. The carrier 11 to be taken out refers to, for example, the carrier 11 that has completed the coating process for all the wafers W accommodated therein.
其次,控制部100,係依序執行步驟S42,S43。在步驟S42中,第二氧濃度調節部104以開始使複數個負載鎖室60中之空的負載鎖室60內之氧濃度下降之處理的方式,控制第二空調部70。第二氧濃度調節部104,係以使閥71之開合度下降(例如關閉閥71)並使閥72之開合度上升,且以使閥73之開合度下降(例如關閉閥73)並開始泵P所致之氣體之壓送的方式,控制第二空調部70。在步驟S43中,第三鎖固控制部107判定從氧濃度感測器D6取得之負載鎖室60內之氧濃度的計測結果是否為預定值以下。Next, the control unit 100 sequentially executes steps S42 and S43. In step S42 , the second oxygen concentration adjusting unit 104 controls the second air conditioning unit 70 so as to start a process of lowering the oxygen concentration in the empty load lock chamber 60 among the plurality of load lock chambers 60 . The second oxygen concentration adjusting unit 104 decreases the opening degree of the valve 71 (for example, closes the valve 71), increases the opening degree of the valve 72, and decreases the opening degree of the valve 73 (for example, closes the valve 73) to start the pump. The method of pressurizing the gas caused by P controls the second air conditioning unit 70 . In step S43, the third lock control unit 107 determines whether the measurement result of the oxygen concentration in the load lock chamber 60 obtained from the oxygen concentration sensor D6 is equal to or less than a predetermined value.
在步驟S43中,在氧濃度感測器D6之計測結果被判定為高於預定值的情況下,控制部100,係使處理返回到步驟S42。以後,直至氧濃度感測器D6的計測結果成為預定值以上之前,重複確認氧濃度感測器D6的計測結果。In step S43, when the measurement result of the oxygen concentration sensor D6 is determined to be higher than the predetermined value, the control unit 100 returns the process to step S42. Thereafter, the measurement result of the oxygen concentration sensor D6 is repeatedly checked until the measurement result of the oxygen concentration sensor D6 becomes a predetermined value or more.
在步驟S43中,在氧濃度感測器D6之計測結果被判定為預定值以下的情況下,控制部100,係執行步驟S44。在步驟S44中,第二氧濃度調節部104以停止負載鎖室60內之氧濃度的下降處理之方式,控制第二空調部70。例如第二氧濃度調節部104,係以將開合度設成為0的方式,關閉閥71、閥72及閥73,並以使泵P所致之氣體之壓送停止的方式,控制第二空調部70。In step S43, when the measurement result of the oxygen concentration sensor D6 is determined to be less than the predetermined value, the control unit 100 executes step S44. In step S44, the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 so as to stop the reduction process of the oxygen concentration in the load lock chamber 60. For example, the second oxygen concentration adjustment unit 104 controls the second air conditioner to close the valve 71, the valve 72, and the valve 73 so that the opening and closing degree is set to 0, and to stop the pressure feeding of gas by the pump P. Department 70.
其次,控制部100,係依序執行步驟S45,S46,S47。在步驟S45中,第三鎖固控制部107將鎖固狀態切換成解除狀態,搬送控制部106以開啟門63的方式,控制開關驅動部65。在步驟S46中,搬送控制部106以將載體區塊3之載體11搬送至負載鎖室60內的方式,控制搬送機械臂A3。在步驟S47中,搬送控制部106以顯示負載鎖室60內存在載體11的方式,控制顯示部65b。例如搬送控制部106,係以從熄滅狀態切換成點亮狀態的方式,控制顯示部65b。Next, the control unit 100 sequentially executes steps S45, S46, and S47. In step S45, the third locking control unit 107 switches the locking state to the unlocked state, and the transportation control unit 106 controls the switch driving unit 65 to open the door 63. In step S46 , the transport control unit 106 controls the transport robot arm A3 so as to transport the carriers 11 of the carrier block 3 into the load lock chamber 60 . In step S47, the transportation control unit 106 controls the display unit 65b to display that the carrier 11 is present in the load lock chamber 60. For example, the transport control unit 106 controls the display unit 65b to switch the display unit 65b from the light-off state to the light-on state.
其次,控制部100,係執行步驟S48。在步驟S48中,搬送控制部106以關閉門63的方式,控制開關驅動部65,第三鎖固控制部107將解除狀態切換成鎖固狀態。Next, the control unit 100 executes step S48. In step S48, the transport control unit 106 controls the switch drive unit 65 to close the door 63, and the third lock control unit 107 switches the unlocked state to the locked state.
如圖12所示般,控制器100,係接著執行步驟S49。在步驟S49中,第二氧濃度調節部104待機至門62之鎖固解除的要求被輸入於輸入部65a。As shown in Figure 12, the controller 100 then executes step S49. In step S49, the second oxygen concentration adjustment unit 104 waits until a request to unlock the door 62 is input to the input unit 65a.
當門62之鎖固解除的要求被輸入時,控制部100,係依序執行步驟S50,S51。在步驟S50中,第二氧濃度調節部104以開始使負載鎖室60內的氧濃度上升之處理的方式,控制第二空調部70。第二氧濃度調節部104,係以使閥71之開合度上升並使閥72之開合度下降(例如關閉閥72)且使閥73之開合度上升的方式,控制第二空調部70。在步驟S51中,第二氧濃度調節部104判定從氧濃度感測器D6取得之負載鎖室60內之氧濃度的計測結果是否為預定值以上。When a request to unlock the door 62 is input, the control unit 100 sequentially executes steps S50 and S51. In step S50 , the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 so as to start a process of increasing the oxygen concentration in the load lock chamber 60 . The second oxygen concentration adjusting unit 104 controls the second air conditioning unit 70 so as to increase the opening degree of the valve 71, decrease the opening degree of the valve 72 (for example, close the valve 72), and increase the opening degree of the valve 73. In step S51, the second oxygen concentration adjustment unit 104 determines whether the measurement result of the oxygen concentration in the load lock chamber 60 obtained from the oxygen concentration sensor D6 is equal to or higher than a predetermined value.
在步驟S51中,在氧濃度感測器D6之計測結果被判定為低於預定值的情況下,控制部100,係使處理返回到步驟S50。以後,直至氧濃度感測器D6的計測結果成為預定值以上之前,重複確認氧濃度感測器D6的計測結果。In step S51, when the measurement result of the oxygen concentration sensor D6 is determined to be lower than the predetermined value, the control unit 100 returns the process to step S50. Thereafter, the measurement result of the oxygen concentration sensor D6 is repeatedly checked until the measurement result of the oxygen concentration sensor D6 becomes a predetermined value or more.
在步驟S51中,在氧濃度感測器D6之計測結果被判定為預定值以上的情況下,控制部100,係執行步驟S52。在步驟S52中,第二氧濃度調節部104以停止負載鎖室60內之氧濃度的上升處理之方式,控制第二空調部70。第二氧濃度調節部104,係以將開合度設成為0的方式,控制閥71、閥72及閥73。In step S51, when the measurement result of the oxygen concentration sensor D6 is determined to be equal to or greater than the predetermined value, the control unit 100 executes step S52. In step S52, the second oxygen concentration adjustment unit 104 controls the second air conditioning unit 70 to stop the process of increasing the oxygen concentration in the load lock chamber 60. The second oxygen concentration adjusting unit 104 controls the valve 71 , the valve 72 and the valve 73 so that the opening and closing degree is set to 0.
其次,控制部100,係依序執行步驟S53,S54。在步驟S53中,第二鎖固控制部105以將鎖固狀態切換成解除狀態的方式,控制鎖固64。在步驟S54中,搬送控制部106待機至載體感測器D10未檢測出載體11。Next, the control unit 100 sequentially executes steps S53 and S54. In step S53, the second lock control unit 105 controls the lock 64 to switch the lock state to the unlocked state. In step S54, the transport control unit 106 waits until the carrier sensor D10 does not detect the carrier 11.
當載體感測器D10未檢測出載體11時,控制部100,係執行步驟S55。在步驟S55中,搬送控制部106以顯示負載鎖室60內不存在載體11的方式,控制顯示部65b。例如搬送控制部106,係以從點亮狀態切換成熄滅狀態的方式,控制顯示部65b。When the carrier sensor D10 does not detect the carrier 11, the control unit 100 executes step S55. In step S55, the transportation control unit 106 controls the display unit 65b so as to display that the carrier 11 is not present in the load lock chamber 60. For example, the transport control unit 106 controls the display unit 65b so as to switch from the lighting state to the off state.
其次,控制部100,係執行步驟S56。在步驟S56中,搬送控制部106待機至門62之鎖固的要求被輸入於輸入部65a。在步驟S56中,當門62之鎖固的要求被輸入時,控制部100,係執行步驟S56。在步驟S26中,第二鎖固控制部105確認門62被關閉。具體而言,第二鎖固控制部105,係確認門開關感測器D11檢測到門62被關閉。在門62未被關閉的情況下,第二鎖固控制部105,係待機至門62被關閉。Next, the control unit 100 executes step S56. In step S56, the transport control unit 106 waits until a request to lock the door 62 is input to the input unit 65a. In step S56, when a request to lock the door 62 is input, the control unit 100 executes step S56. In step S26, the second lock control unit 105 confirms that the door 62 is closed. Specifically, the second lock control unit 105 confirms that the door switch sensor D11 detects that the door 62 is closed. When the door 62 is not closed, the second lock control unit 105 waits until the door 62 is closed.
其次,控制部100,係執行步驟S58。在步驟S58中,第二鎖固控制部105以將解除狀態切換成鎖固狀態並容許門62之開放的方式,控制鎖固64。藉由以上,完成載體搬出處理。Next, the control unit 100 executes step S58. In step S58, the second lock control unit 105 controls the lock 64 to switch the unlocked state to the locked state and allow the door 62 to be opened. Through the above, the carrier unloading process is completed.
基板處理裝置1,係具備有:載體區塊3,可設置收容有複數個晶圓W之載體11;液處理單元U1及熱處理單元U2,進行對晶圓W之處理;搬送臂A2,在載體11與液處理單元U1及熱處理單元U2之間搬送晶圓W;殼體10,收容液處理單元U1、熱處理單元U2及搬送臂A2;包體20,以高於殼體10之氣密性收容殼體10;第一壓力調節部40,調節殼體10內之氣壓;第二壓力調節部50,調節包體20內之氣壓;及控制部100,以使包體20內之氣壓保持低於包體20外之氣壓及殼體10內之氣壓的任一者之狀態的方式,控制第一壓力調節部40及第二壓力調節部50。 The substrate processing device 1 is equipped with: a carrier block 3, which can be provided with a carrier 11 for accommodating a plurality of wafers W; a liquid processing unit U1 and a heat treatment unit U2 for processing the wafers W; a transfer arm A2, which is mounted on the carrier 11 transports the wafer W between the liquid processing unit U1 and the thermal processing unit U2; the housing 10 houses the liquid processing unit U1, the thermal processing unit U2 and the transport arm A2; the package 20 houses it with a higher airtightness than the housing 10 Housing 10; the first pressure regulating part 40, which regulates the air pressure in the housing 10; the second pressure regulating part 50, which regulates the air pressure in the package body 20; and the control part 100, so that the air pressure in the package body 20 is kept below The first pressure regulating part 40 and the second pressure regulating part 50 are controlled by the state of any one of the air pressure outside the package body 20 and the air pressure inside the casing 10 .
根據該基板處理裝置1,以氣密性高於殼體10之包體20收容殼體10,並將包體20內之氣壓保持為比包體20外之氣壓及殼體10內之氣壓低的狀態,藉此,可抑制從殼體10內漏出至殼體10外之氣體向包體20外漏出的情形。因此,可將搬送區域、液處理單元U1內等、殼體10內的各部中之氧濃度維持為所期望的狀態。因此,基板處理裝置1,係對於基板處理中之氧濃度的管理有用。 According to the substrate processing apparatus 1, the housing 10 is accommodated in the package 20 with a higher airtightness than the housing 10, and the air pressure inside the package 20 is kept lower than the air pressure outside the package 20 and the air pressure inside the housing 10. state, whereby the gas leaking from the inside of the casing 10 to the outside of the casing 10 can be suppressed from leaking out of the package body 20 . Therefore, the oxygen concentration in each part of the casing 10 , such as the transfer area, the liquid treatment unit U1 , etc., can be maintained in a desired state. Therefore, the substrate processing apparatus 1 is useful for managing the oxygen concentration during substrate processing.
該基板處理裝置1,係亦可更具備有:第一空調部30,調節包體20內之氧濃度,控制部100,係亦可進一步執行如下述者:以將包體20內之氧濃度維持低於包體20外之氧濃度的方式,控制第一空調部30。在該情況下,將收容殼體10之包體20內的氧濃度進行調節,藉此, 可有效率地調節殼體10內的各部中之氧濃度。 The substrate processing apparatus 1 may further include: a first air conditioning unit 30 to adjust the oxygen concentration in the package 20 , and the control unit 100 may further perform the following steps: to adjust the oxygen concentration in the package 20 The first air conditioning unit 30 is controlled to maintain the oxygen concentration lower than that outside the package body 20 . In this case, the oxygen concentration in the package 20 containing the housing 10 is adjusted, thereby, The oxygen concentration in each part within the housing 10 can be adjusted efficiently.
第一空調部30,係亦可具有:氣體供給部31,將氣體供給至包體20內;濃度調節部32,調整從氣體供給部31被傳送至包體20內之氣體的氧濃度;及回流部33,使氣體從包體20內回流至氣體供給部31,控制部100,係亦可執行如下述者:在將包體20內之氧濃度維持低於包體20外的氧濃度之際,以使從氣體供給部31被傳送至包體20內之氣體的氧濃度比包體20外之氧濃度更低的方式,控制濃度調節部32。在該情況下,由於經濃度調節之氣體從氣體供給部31被傳送至包體20內,因此,可更確實地維持包體20內之氧濃度。又,由於藉由回流部33使包體20內之氣體回流至氣體供給部31,因此,氧濃度經調節之氣體可被循環利用並效率良好地維持氧濃度。 The first air conditioning unit 30 may also include: a gas supply unit 31 that supplies gas into the package body 20; a concentration adjustment unit 32 that adjusts the oxygen concentration of the gas sent from the gas supply unit 31 to the package body 20; and The reflux part 33 makes the gas flow back from the inside of the package 20 to the gas supply part 31. The control part 100 may also perform the following steps: maintaining the oxygen concentration inside the package 20 lower than the oxygen concentration outside the package 20. In this case, the concentration adjustment unit 32 is controlled so that the oxygen concentration of the gas sent from the gas supply unit 31 into the package body 20 is lower than the oxygen concentration outside the package body 20 . In this case, since the concentration-adjusted gas is delivered from the gas supply part 31 into the package body 20 , the oxygen concentration in the package body 20 can be maintained more reliably. In addition, since the gas in the package 20 is returned to the gas supply part 31 through the return part 33, the gas with the adjusted oxygen concentration can be recycled and the oxygen concentration can be maintained efficiently.
第一壓力調節部40,係亦可具有:送風部41,將氣體從包體20內傳送至殼體10內,第二壓力調節部50,係亦可具有:排氣部52,將包體20內之氣體的一部分導引至排氣路徑。根據該構成,能以簡單的構成來調節氣壓。 The first pressure regulating part 40 may also have an air blowing part 41 for transmitting gas from the package body 20 to the housing 10. The second pressure regulating part 50 may also have an exhaust part 52 for transmitting gas from the package body 20 to the housing 10. Part of the gas within 20 is directed to the exhaust path. According to this structure, the air pressure can be adjusted with a simple structure.
該基板處理裝置1,係亦可更具備有:門21,用於進出包體20內;鎖固22,對容許門21之開放的狀態與禁止門21之開放的狀態進行切換;及氧濃度感測器D1,計測包體20內之氧濃度,控制部100,係亦可進一步執行如下述者:以使從氣體供給部31被傳送至包體20內之氣體的氧濃度比包體20內之氧濃度更高的方式,控制濃度調節部32;及在氧濃度感測器D1所致之氧濃度的計測結果低於預定值的情況下,以禁止門21之開放的方式,控制鎖固22。在該情況下,由於直至包體20內之氧濃度被調節成預定值以上之前,係藉由鎖固22禁止門21的開放,因此,例如可在人員進入包體20內的情況下等,在門21的開放之前,使包體20內的氧濃度確實地上升。The substrate processing device 1 may further include: a door 21 for entering and exiting the package 20; a lock 22 for switching between a state that allows the opening of the door 21 and a state that prohibits the opening of the door 21; and an oxygen concentration. The sensor D1 measures the oxygen concentration in the package 20 . The control unit 100 may further perform the following steps: so that the oxygen concentration of the gas sent from the gas supply unit 31 to the package 20 is higher than the oxygen concentration in the package 20 . The concentration adjustment unit 32 is controlled in a manner that the oxygen concentration in the air is higher; and when the measurement result of the oxygen concentration caused by the oxygen concentration sensor D1 is lower than a predetermined value, the lock is controlled in a manner that prohibits the opening of the door 21 Solid 22. In this case, the lock 22 prohibits the door 21 from opening until the oxygen concentration in the package 20 is adjusted to a predetermined value or more. Therefore, for example, when a person enters the package 20, Before the door 21 is opened, the oxygen concentration in the package body 20 is surely increased.
而且,該基板處理裝置1,係亦可更具備有:氧濃度感測器D2,計測殼體10內可向外部開放之空間的氧濃度,控制部100,係即便在氧濃度感測器D2所致之氧濃度的計測結果低於預定值的情況下,亦可以禁止門21之開放的方式,控制鎖固22。在該情況下,在開放殼體10中可向外部開放的空間之際,可使氧濃度確實地上升。Furthermore, the substrate processing apparatus 1 may further include an oxygen concentration sensor D2 that measures the oxygen concentration in a space open to the outside in the casing 10 , and the control unit 100 is configured to detect the oxygen concentration sensor D2 When the resulting measurement result of the oxygen concentration is lower than a predetermined value, the lock 22 can also be controlled to prohibit the opening of the door 21 . In this case, when opening the space openable to the outside in the casing 10, the oxygen concentration can be reliably increased.
又,該基板處理裝置1,係亦可更具備有:氧濃度感測器D3,計測回流部33內的氧濃度,控制部100,係即便在氧濃度感測器D3所致之氧濃度的檢測結果低於預定值的情況下,亦可以禁止門21之開放的方式,控制鎖固22。在該情況下,由於直至回流部33內之氧濃度成為預定值以上之前,係藉由鎖固22禁止門21的開放,因此,可使包體20內的氧濃度更確實地上升。In addition, the substrate processing apparatus 1 may further include an oxygen concentration sensor D3 for measuring the oxygen concentration in the recirculation part 33, and the control unit 100 may be configured to measure the oxygen concentration caused by the oxygen concentration sensor D3. When the detection result is lower than the predetermined value, the lock 22 can also be controlled to prohibit the opening of the door 21 . In this case, since the lock 22 prohibits the door 21 from opening until the oxygen concentration in the return part 33 reaches a predetermined value or more, the oxygen concentration in the package body 20 can be increased more reliably.
又,亦可更具備有:氧濃度感測器D4,計測氣體供給部31內的氧濃度,控制部100,係即便在氧濃度感測器D4所致之氧濃度的檢測結果低於預定值的情況下,亦可以禁止門21之開放的方式,控制鎖固22。在該情況下,由於直至氣體供給部31內之氧濃度成為預定值以上之前,係藉由鎖固22禁止門21的開放,因此,可使包體20內的氧濃度更確實地上升。Furthermore, the oxygen concentration sensor D4 may be further provided to measure the oxygen concentration in the gas supply unit 31, and the control unit 100 may detect the oxygen concentration even if the detection result of the oxygen concentration by the oxygen concentration sensor D4 is lower than a predetermined value. In this case, the lock 22 can also be controlled by prohibiting the opening of the door 21 . In this case, the lock 22 prevents the door 21 from opening until the oxygen concentration in the gas supply part 31 reaches a predetermined value or more. Therefore, the oxygen concentration in the package 20 can be increased more reliably.
而且,該基板處理裝置1,係亦可更具備有:揮發物濃度感測器D7,用以計測從液處理單元U1及熱處理單元U2內流出至包體20內之揮發物的濃度,控制部100,係即便在揮發物濃度感測器D7所致之計測結果高於預定值的情況下,亦可以禁止門21之開放的方式,控制鎖固22。在該情況下,由於直至包體20內之揮發物濃度成為預定值以下之前,係藉由鎖固22禁止門21的開放,因此,可使包體20內的揮發物確實地下降。Moreover, the substrate processing apparatus 1 may further include a volatile concentration sensor D7 for measuring the concentration of volatiles flowing out from the liquid processing unit U1 and the heat treatment unit U2 into the package 20, and the control unit 100, even when the measurement result caused by the volatile matter concentration sensor D7 is higher than a predetermined value, the lock 22 can be controlled to prohibit the opening of the door 21. In this case, the lock 22 prevents the door 21 from opening until the concentration of volatile matter in the package body 20 becomes below the predetermined value. Therefore, the volatile matter in the package body 20 can be reliably reduced.
揮發物濃度感測器D7,係亦可被設置於排氣部52。藉由該構成,可利用排氣部52,輕易地檢測揮發物。又,在擋板52a之開合度為最大的情況下,係由於被導引至排氣部52之氣體的量增加,因此,可更輕易地檢測揮發物。The volatile matter concentration sensor D7 may also be provided in the exhaust part 52 . With this configuration, the exhaust part 52 can be used to easily detect volatile matter. In addition, when the opening and closing degree of the baffle 52a is the maximum, the amount of gas guided to the exhaust part 52 increases, so the volatile matter can be detected more easily.
氣體供給部31,係亦可含有:管路L1,將氣體導引至包體20內;及管路L2,將氣體導引至液處理單元U1及熱處理單元U2內。在該情況下,由於一面以管路L1將氣體導引至包體20內,一面以作為其他路徑之管路L2將氣體導引至液處理單元U1及熱處理單元U2內,因此,可更嚴格地調節液處理單元U1及熱處理單元U2內的氧濃度。The gas supply part 31 may also include: a pipeline L1 that guides the gas into the package 20; and a pipeline L2 that guides the gas into the liquid treatment unit U1 and the heat treatment unit U2. In this case, since the gas is guided into the package body 20 through the pipeline L1, and the gas is guided into the liquid treatment unit U1 and the heat treatment unit U2 through the pipeline L2 as another path, it can be more stringent. The oxygen concentration in the liquid treatment unit U1 and the heat treatment unit U2 is adjusted accordingly.
亦可更具備有:排氣部51,將液處理單元U1及熱處理單元U2內之氣體導引至排氣路徑。在該情況下,由於對揮發物濃度高之液處理單元U1及熱處理單元U2內的氣體進行排氣,因此,可抑制揮發物濃度變得過大之情形。又,相較於使揮發物濃度高之液處理單元U1及熱處理單元U2內的氣體回流至回流部33的情況,回流部33之過濾器單元33b,33d所去除之揮發物的量會被降低,因此,可抑制過濾器單元33b,33d之維護頻率的增加。It may further include an exhaust part 51 to guide the gas in the liquid treatment unit U1 and the heat treatment unit U2 to the exhaust path. In this case, since the gas in the liquid treatment unit U1 and the heat treatment unit U2 with high volatile matter concentration is exhausted, it is possible to suppress the volatile matter concentration from becoming excessively high. In addition, compared with the case where the gas in the liquid treatment unit U1 and the heat treatment unit U2 with a high concentration of volatile matter is returned to the return part 33, the amount of volatile matter removed by the filter units 33b and 33d of the return part 33 will be reduced. , therefore, an increase in the frequency of maintenance of the filter units 33b, 33d can be suppressed.
排氣部51,係亦可具有:管路L7,L8,將氣體導引至殼體10之側方。根據該構成,容易在包體20內彙整來自液處理單元U1內及熱處理單元U2內之排氣用的管路。The exhaust part 51 may also have pipelines L7 and L8 to guide gas to the side of the housing 10 . According to this structure, it is easy to integrate the exhaust pipes from the liquid processing unit U1 and the heat treatment unit U2 in the package body 20 .
該基板處理裝置1,係亦可更具備有:負載鎖室60,收容載體11;門62,使負載鎖室60內向包體20外開關;門63,使負載鎖室60內向包體20內開關;收授部67,在負載鎖室60與載體區塊3之間進行載體11的收授;及第二空調部70,調節負載鎖室60內的氧濃度,控制部100,係亦可進一步執行如下述者:在門62的開放之前,以使負載鎖室60內之氧濃度接近包體20外之氧濃度的方式,控制第二空調部70;及在門63的開放之前,以使負載鎖室60內之氧濃度接近包體20內之氧濃度的方式,控制第二空調部70。根據該構成,可開放門62而從負載鎖室60內搬出載體11,並可開放門63而進行載體11朝負載鎖室60內之儲存。又,在載體11的搬出及儲存之際,可同時抑制氧濃度高之氣體從負載鎖室60內朝包體20外的漏出與氧濃度低之氣體從負載鎖室60內朝包體20內的漏出。The substrate processing device 1 may further include: a load lock chamber 60 for accommodating the carrier 11; a door 62 for opening and closing the load lock chamber 60 from the inside to the outside of the package body 20; and a door 63 for opening and closing the load lock chamber 60 from the inside of the package body 20. switch; the receiving and receiving part 67 is used to receive and receive the carrier 11 between the load lock chamber 60 and the carrier block 3; and the second air conditioning part 70 is used to adjust the oxygen concentration in the load lock chamber 60. The control part 100 can also be Further execution is as follows: before the door 62 is opened, the second air conditioning unit 70 is controlled in such a manner that the oxygen concentration in the load lock chamber 60 is close to the oxygen concentration outside the package 20; and before the door 63 is opened, The second air conditioning unit 70 is controlled so that the oxygen concentration in the load lock chamber 60 is close to the oxygen concentration in the package body 20 . According to this configuration, the door 62 can be opened to carry out the carrier 11 from the load lock chamber 60 , and the door 63 can be opened to store the carrier 11 in the load lock chamber 60 . In addition, when the carrier 11 is carried out and stored, the leakage of gas with a high oxygen concentration from the load lock chamber 60 to the outside of the package 20 and the leakage of gas with a low oxygen concentration from the load lock chamber 60 into the package 20 can be suppressed at the same time. of leakage.
該基板處理裝置1,係亦可更具備有:鎖固64,對容許門62之開放的狀態與禁止門62之開放的狀態進行切換;開關驅動部65,對容許門63之開放的狀態與禁止門63之開放的狀態進行切換;及氧濃度感測器D6,計測負載鎖室60內之氧濃度,控制部100,係亦可進一步執行如下述者:在氧濃度感測器D6所致之計測結果低於預定值的情況下,以禁止門62之開放的方式,控制鎖固64;及在氧濃度感測器D6所致之測定結果高於預定值的情況下,以禁止門63之開放的方式,控制開關驅動部65。在該情況下,由於直至負載鎖室60內的氧濃度被適切調節之前,係禁止門62及門63的開放,因此,可在門62或門63的開放之前,更確實地調節負載鎖室60內的氧濃度。The substrate processing apparatus 1 may further include: a lock 64 for switching between a state that allows the door 62 to be opened and a state that prohibits the door 62 from being opened; and a switch drive unit 65 that switches between a state that allows the door 63 to be opened and a state that prohibits the door 62 from being opened. The prohibition door 63 is switched to an open state; and the oxygen concentration sensor D6 measures the oxygen concentration in the load lock chamber 60. The control unit 100 may further perform the following: when the oxygen concentration sensor D6 When the measurement result of the oxygen concentration sensor D6 is lower than the predetermined value, the lock 64 is controlled to prohibit the opening of the door 62; and when the measurement result of the oxygen concentration sensor D6 is higher than the predetermined value, the door 63 is prohibited from opening. In an open mode, the switch driving part 65 is controlled. In this case, the opening of the door 62 and the door 63 is prohibited until the oxygen concentration in the load lock chamber 60 is appropriately adjusted. Therefore, the load lock chamber can be adjusted more reliably before the door 62 or the door 63 is opened. Oxygen concentration within 60%.
以上,雖說明了實施形態,但本發明並不一定限定於上述之實施形態,在不脫離其要旨的範圍下可進行各種變更。例如,基板處理裝置1,係除了感光性被膜的形成以外,亦可被構成為進一步施加該感光性被膜的曝光及該感光性被膜的顯像。上述之構成,係只要是在被維持為預定氛圍之空間內所進行的處理,則亦可應用於在低氧以外的氛圍下對基板所進行的處理。作為處理對象之基板,係不限於半導體晶圓,亦可為例如玻璃基板、光罩基板、FPD(Flat Panel Display)等。Although the embodiments have been described above, the present invention is not necessarily limited to the above-described embodiments, and various changes can be made without departing from the gist of the invention. For example, the substrate processing apparatus 1 may be configured to further expose the photosensitive film and develop the photosensitive film in addition to the formation of the photosensitive film. The above-mentioned structure can also be applied to processing of a substrate in an atmosphere other than low oxygen, as long as the processing is performed in a space maintained in a predetermined atmosphere. The substrate to be processed is not limited to a semiconductor wafer, but may also be a glass substrate, a photomask substrate, an FPD (Flat Panel Display), etc.
1‧‧‧基板處理裝置 11‧‧‧載體 3‧‧‧載體區塊(載體支撐部) 4‧‧‧處理區塊 10‧‧‧殼體 20‧‧‧包體 21‧‧‧門(第一門) 22‧‧‧鎖固(第一鎖固) 30‧‧‧第一空調部 31‧‧‧氣體供給部 32‧‧‧濃度調節部 33‧‧‧回流部 40‧‧‧第一壓力調節部 41‧‧‧送風部 50‧‧‧第二壓力調節部 51‧‧‧排氣部(第二排氣部) 52‧‧‧排氣部(第一排氣部) 61‧‧‧收容部(載體收容部) 62‧‧‧門(第二門) 63‧‧‧門(第三門) 64‧‧‧鎖固(第二鎖固) 65‧‧‧開關驅動部(第三鎖固) 67‧‧‧收授部 70‧‧‧第二空調部 100‧‧‧控制部 A2‧‧‧搬送臂 D1‧‧‧氧濃度感測器(第一氧濃度感測器) D2‧‧‧氧濃度感測器(第二氧濃度感測器) D3‧‧‧氧濃度感測器(第三氧濃度感測器) D4‧‧‧氧濃度感測器(第四氧濃度感測器) D6‧‧‧氧濃度感測器(第五氧濃度感測器) D7‧‧‧揮發物濃度感測器 L1‧‧‧管路(第一氣體管路) L2‧‧‧管路(第二氣體管路) L7、L8‧‧‧管路(第三氣體管路) U1‧‧‧液處理單元(處理單元) U2‧‧‧熱處理單元(處理單元) W‧‧‧晶圓(基板) X‧‧‧動力設備(排氣路徑)1‧‧‧Substrate processing device 11‧‧‧Carrier 3‧‧‧Carrier block (carrier support part) 4‧‧‧Processing Block 10‧‧‧Casing 20‧‧‧Inclusion body Gate 21‧‧‧(the first gate) 22‧‧‧Lock (first lock) 30‧‧‧First Air Conditioning Department 31‧‧‧Gas Supply Department 32‧‧‧Concentration adjustment part 33‧‧‧Reflow Department 40‧‧‧First pressure regulating part 41‧‧‧Air supply part 50‧‧‧Second pressure regulating part 51‧‧‧Exhaust part (second exhaust part) 52‧‧‧Exhaust part (first exhaust part) 61‧‧‧Containment Department (Carrier Containment Department) Gate 62‧‧‧(Second Gate) Gate 63‧‧‧(the third gate) 64‧‧‧Lock (second lock) 65‧‧‧Switch driving part (third locking) 67‧‧‧Receiving and Receiving Department 70‧‧‧Second Air Conditioning Department 100‧‧‧Control Department A2‧‧‧Conveying arm D1‧‧‧Oxygen concentration sensor (the first oxygen concentration sensor) D2‧‧‧Oxygen concentration sensor (second oxygen concentration sensor) D3‧‧‧Oxygen concentration sensor (the third oxygen concentration sensor) D4‧‧‧Oxygen concentration sensor (the fourth oxygen concentration sensor) D6‧‧‧Oxygen concentration sensor (fifth oxygen concentration sensor) D7‧‧‧Volatile concentration sensor L1‧‧‧pipeline (first gas pipeline) L2‧‧‧pipe (second gas pipe) L7, L8‧‧‧pipeline (third gas pipeline) U1‧‧‧Liquid processing unit (processing unit) U2‧‧‧Heat treatment unit (processing unit) W‧‧‧wafer (substrate) X‧‧‧Power equipment (exhaust path)
[圖1] 圖1,係表示基板處理裝置之概略構成的示意圖。 [圖2] 圖2,係沿著圖1之II-II線的剖面圖。 [圖3] 圖3,係表示氣體管路的側視圖。 [圖4] 圖4(a)及圖4(b),係表示操作面板的示意圖。 [圖5] 圖5,係表示控制部之功能上之構成的方塊圖。 [圖6] 圖6,係表示控制部之硬體構成的方塊圖。 [圖7] 圖7,係表示空調處理程序的流程圖。 [圖8] 圖8,係表示第一鎖固解除處理程序的流程圖。 [圖9] 圖9,係表示載體搬入處理程序的流程圖。 [圖10] 圖10,係表示載體搬入處理程序的流程圖。 [圖11] 圖11,係表示載體搬出處理程序的流程圖。 [圖12] 圖12,係表示載體搬出處理程序的流程圖。[Fig. 1] Fig. 1 is a schematic diagram showing the schematic structure of a substrate processing apparatus. [Fig. 2] Fig. 2 is a cross-sectional view along line II-II of Fig. 1. [Fig. 3] Fig. 3 is a side view showing a gas pipeline. [Fig. 4] Fig. 4(a) and Fig. 4(b) are schematic diagrams showing the operation panel. [Fig. 5] Fig. 5 is a block diagram showing the functional structure of the control unit. [Fig. 6] Fig. 6 is a block diagram showing the hardware structure of the control unit. [Fig. 7] Fig. 7 is a flowchart showing an air conditioning processing program. [Fig. 8] Fig. 8 is a flowchart showing the first lock release processing program. [Fig. 9] Fig. 9 is a flowchart showing the carrier loading processing program. [Fig. 10] Fig. 10 is a flowchart showing the carrier loading processing program. [Fig. 11] Fig. 11 is a flowchart showing the carrier unloading processing program. [Fig. 12] Fig. 12 is a flowchart showing the carrier unloading processing program.
1:基板處理裝置 1:Substrate processing device
2:塗佈裝置 2: Coating device
10:殼體 10: Shell
20:包體 20: package body
21:門 21:door
22:鎖固 22:Lock
30:第一空調部 30:First air conditioning department
31:氣體供給部 31:Gas supply department
31a:送風機 31a: Blower
31b:過濾器 31b: filter
31c:過濾器 31c: filter
31d:溫調單元 31d:Temperature control unit
32:濃度調節部 32:Concentration adjustment part
32a:閥 32a: valve
32b:閥 32b: valve
33:回流部 33: Return Department
33a:過濾器單元 33a: Filter unit
33b:過濾器單元 33b: Filter unit
33c:過濾器單元 33c: Filter unit
33d:過濾器單元 33d: filter unit
50:第二壓力調節部 50: Second pressure regulating part
51:排氣部 51:Exhaust part
52:排氣部 52:Exhaust part
52a:擋板 52a:Baffle
60:負載鎖室 60:Load lock chamber
61:收容部 61: Containment Department
62:門 62:door
63:門 63:door
64:鎖固 64:Lock
70:第二空調部 70:Second Air Conditioning Department
71:閥 71:Valve
72:閥 72:Valve
73:閥 73:Valve
100:控制部 100:Control Department
C1:冷卻部 C1: Cooling part
C3:冷卻部 C3: Cooling part
D1:氧濃度感測器 D1: Oxygen concentration sensor
D2:氧濃度感測器 D2: Oxygen concentration sensor
D3:氧濃度感測器 D3: Oxygen concentration sensor
D4:氧濃度感測器 D4: Oxygen concentration sensor
D5:氧濃度感測器 D5: Oxygen concentration sensor
D6:氧濃度感測器 D6: Oxygen concentration sensor
D7:揮發物濃度感測器 D7: Volatile concentration sensor
D8:壓力感測器 D8: Pressure sensor
D9:壓力感測器 D9: Pressure sensor
F1:過濾器 F1: filter
F2:過濾器 F2: Filter
F3:過濾器 F3: Filter
F4:過濾器 F4: Filter
L1:管路 L1:Pipeline
L2:管路 L2:Pipeline
L4:管路 L4:Pipeline
L5:管路 L5:Pipeline
L6:管路 L6:Pipeline
L7:管路 L7:Pipeline
L8:管路 L8:Pipeline
L9:管路 L9:Pipeline
L11:管路 L11:Pipeline
L12:管路 L12:Pipeline
L13:管路 L13:Pipeline
L14:管路 L14:Pipeline
U1:液處理單元 U1: liquid processing unit
U2:熱處理單元 U2: Heat treatment unit
f:送風機 f: blower
C:罩杯 C: cup
N:供給源 N: supply source
P:泵 P:pump
W:晶圓 W:wafer
X:動力設備 X: Power equipment
Claims (15)
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JP2017-214934 | 2017-11-07 | ||
JP2017214934 | 2017-11-07 |
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TW201931494A TW201931494A (en) | 2019-08-01 |
TWI815827B true TWI815827B (en) | 2023-09-21 |
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TW107137698A TWI815827B (en) | 2017-11-07 | 2018-10-25 | Substrate processing equipment |
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JP (1) | JP6872632B2 (en) |
TW (1) | TWI815827B (en) |
WO (1) | WO2019093244A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080220621A1 (en) * | 2005-01-28 | 2008-09-11 | Tokyo Electron Limited | Substrate treatment apparatus and substrate treatment method |
JP2008263048A (en) * | 2007-04-12 | 2008-10-30 | Renesas Technology Corp | Semiconductor manufacturing device and manufacturing method of semiconductor device |
WO2017037937A1 (en) * | 2015-09-04 | 2017-03-09 | 株式会社日立国際電気 | Reaction tube, substrate processing device and semiconductor device manufacturing method |
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JP3608065B2 (en) * | 1996-10-31 | 2005-01-05 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus and maintenance method for boat and heat insulation cylinder |
JP3349919B2 (en) * | 1997-03-28 | 2002-11-25 | 東芝セラミックス株式会社 | Air purification device for semiconductor manufacturing process |
JP3595756B2 (en) * | 2000-06-01 | 2004-12-02 | キヤノン株式会社 | Exposure apparatus, lithography apparatus, load lock apparatus, device manufacturing method, and lithography method |
JP2002261072A (en) * | 2000-12-25 | 2002-09-13 | Dainippon Screen Mfg Co Ltd | Substrate processor |
JP3979113B2 (en) * | 2002-02-12 | 2007-09-19 | セイコーエプソン株式会社 | Chamber device atmosphere replacement method, chamber device, electro-optical device and organic EL device including the same |
JP4263559B2 (en) * | 2003-07-28 | 2009-05-13 | 東京エレクトロン株式会社 | Development processing apparatus and development processing method |
JP5774331B2 (en) * | 2011-03-03 | 2015-09-09 | 株式会社日立国際電気 | Substrate processing system, management apparatus, data analysis method, and data analysis program |
US10239101B2 (en) * | 2014-01-29 | 2019-03-26 | Murata Machinery, Ltd. | Purge device and method of diffusing gas including purge gas |
KR20170118397A (en) * | 2016-04-15 | 2017-10-25 | 피에스케이 주식회사 | Substrate treating apparatus |
-
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- 2018-10-25 TW TW107137698A patent/TWI815827B/en active
- 2018-11-02 JP JP2019552764A patent/JP6872632B2/en active Active
- 2018-11-02 WO PCT/JP2018/040881 patent/WO2019093244A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20080220621A1 (en) * | 2005-01-28 | 2008-09-11 | Tokyo Electron Limited | Substrate treatment apparatus and substrate treatment method |
JP2008263048A (en) * | 2007-04-12 | 2008-10-30 | Renesas Technology Corp | Semiconductor manufacturing device and manufacturing method of semiconductor device |
WO2017037937A1 (en) * | 2015-09-04 | 2017-03-09 | 株式会社日立国際電気 | Reaction tube, substrate processing device and semiconductor device manufacturing method |
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JP6872632B2 (en) | 2021-05-19 |
TW201931494A (en) | 2019-08-01 |
JPWO2019093244A1 (en) | 2020-11-26 |
WO2019093244A1 (en) | 2019-05-16 |
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