TWI680358B - A resist pattern forming apparatus, a resist pattern forming method - Google Patents

Abstract

The object of the present invention is to provide a photoresist pattern formation device and a photoresist pattern formation method capable of forming a negative photoresist pattern with excellent heat resistance and durability.

The problem-solving method relates to a photoresist pattern forming device, which includes: a coating device for applying a negative photoresist composition to form a photoresist film on a substrate; and developing a photoresist film to form a prepattern. A developing device; a heating device for heating the pre-pattern after the development; a lighting device for performing a light treatment on the heated pre-pattern in a low oxygen gas environment.

Description

Photoresist pattern forming device and photoresist pattern forming method

The invention relates to a photoresist pattern forming device and a photoresist pattern forming method.

Generally, a photo-etching technique is used in the manufacturing process of electronic devices such as liquid crystal display devices and organic EL display devices. Photoresist is used in photolithography. The photoresist pattern obtained by patterning such a photoresist pattern can be used, for example, as a photomask during etching.

Conventionally, there has been a technology for improving heat resistance and durability by applying UV treatment to such a photoresist pattern for a photomask (for example, refer to Patent Document 1). In this technology, UV treatment is performed on a photoresist pattern composed of a positive photoresist composition.

On the other hand, the photoresist pattern does not peel off after patterning, and may be used as a permanent photoresist for an insulating film or a protective film. Such permanent photoresist may require high heat resistance or durability. Generally speaking, the photoresist pattern used as this permanent photoresist is composed of a negative photoresist composition The film is hardened by Post Bake at a high temperature (for example, 200 ° C or higher). However, there is a device such as a TFT element in the lower layer. Therefore, if a high temperature post-bake is performed, the device may be damaged. damage.

Therefore, a permanent photoresist having excellent heat resistance and durability was not conceived when the above-mentioned UV treatment was used without causing damage to TFT elements and the like.

[Prior technical literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-86353

However, the technique described in the above Patent Document 1 discloses that a UV treatment is performed on a photoresist pattern formed of a negative photoresist composition. However, in general, a negative photoresist is excellent in heat resistance and the like. Therefore, UV treatment has not been expected in order to impart heat resistance and durability. Therefore, in terms of using a negative photoresist composition as a permanent photoresist, it is desired that someone can provide a new technology that can improve heat resistance and durability.

The present invention has been made in view of such problems, and an object thereof is to provide a photoresist pattern forming apparatus and a photoresist pattern forming method capable of forming a negative photoresist pattern having excellent heat resistance and durability.

According to a first aspect of the present invention, a photoresist pattern forming device is provided, which includes: a coating device for applying a negative photoresist composition to form a photoresist film on a substrate; Image processing device to form a pre-pattern developing device; a heating device for heating the aforementioned pre-pattern after development; and a light-emitting device for processing the pre-pattern after heating in a low oxygen gas environment.

According to the photoresist pattern forming apparatus related to the first aspect, the residual solvent can be removed by heating the pre-pattern pattern after development. Therefore, since the residual amount of the pre-patterned solvent is reduced, the radical polymerization proceeds well in a low-oxygen state during light treatment, and the hardening of the pre-patterned pattern can be promoted. Therefore, a photoresist pattern having excellent heat resistance and durability and composed of a negative photoresist can be formed.

In the first aspect, the heating device may be designed to heat the pre-pattern at 150 ° C or lower.

According to this design, the pre-pattern is heated at a temperature of 150 ° C or lower, so the residual solvent contained in the pre-pattern can be removed well. Therefore, the prepattern can be hardened well.

According to a second aspect of the present invention, a photoresist pattern forming method is provided, which comprises: a coating step of forming a photoresist film on a substrate by coating a negative photoresist composition; and performing the aforementioned photoresist film Image development step of forming a pre-patterned image; a heating step of heating the pre-patterned pattern after the aforementioned development step; an illumination step of applying a photo-processing to the heated pre-patterned pattern in a low oxygen gas environment .

According to the photoresist pattern forming method related to the second aspect, the pre-pattern after the development is heated, so the residual solvent can be removed. Therefore, the residual amount of the pre-patterned solvent is reduced. Therefore, when the radical treatment is performed in a low-oxygen state during irradiation with light, the hardening of the pre-patterned pattern can be promoted. Therefore, a photoresist pattern having excellent heat resistance and durability and composed of a negative photoresist can be formed.

In the second aspect, the heating step may be designed to heat the pre-pattern at 150 ° C or lower.

According to this design, since the pre-pattern is heated at a temperature of 150 ° C. or lower, the residual solvent contained in the pre-pattern can be removed well. Therefore, the prepattern can be hardened well.

According to the present invention, a negative photoresist pattern having excellent heat resistance and durability can be formed. In addition, a film can be formed without damaging a device such as a TFT element.

SPA‧‧‧ Pattern Forming Device (Photoresist Pattern Forming Device)

LU‧‧‧Loader

CD‧‧‧ Coating Development Department

IF‧‧‧Face

CONT‧‧‧Control Department

G, G1, G2, G3‧‧‧ substrate

C‧‧‧Cassette

SR‧‧‧washing unit

DH‧‧‧Dehydration Baking Unit

CT‧‧‧ Coating Unit

PR‧‧‧Pre-baking unit

DV‧‧‧Developing unit (developing device)

UV, UV1‧‧‧lighting unit

PB‧‧‧ after drying unit

CV1 ~ CV10‧‧‧ conveyor belt mechanism

TR1 ~ TR6‧‧‧Transportation mechanism

EX‧‧‧Exposure device

EE‧‧‧Peripheral exposure device

S1‧‧‧coating steps

S2‧‧‧Pre-baking steps

S3‧‧‧Exposure steps

S4‧‧‧Development steps

S5‧‧‧After baking step

SS1‧‧‧Low temperature baking steps

SS2‧‧‧Low Oxygen Gas Illumination Procedure

10‧‧‧Card Standby

11, 11a, 11b ‧‧‧ handling mechanism

12, 12a, 12b ‧‧‧ handling arm

41‧‧‧dry cleaning device

42‧‧‧ Wet cleaning device

43‧‧‧air knife device

44‧‧‧Heating device

45‧‧‧cooling device

46‧‧‧HMDS device

47‧‧‧coating device

48‧‧‧ vacuum drying device

49‧‧‧ peripheral edge removal device

50‧‧‧Heating device

51‧‧‧cooling device

52‧‧‧ buffer device

55‧‧‧Development device

56‧‧‧washing device

57‧‧‧air knife device

59‧‧‧Heating device

60‧‧‧cooling device

80‧‧‧ preparation device

80a‧‧‧ substrate moving out entrance

80b‧‧‧Connecting section

81‧‧‧lighting device

81a‧‧‧Substrate removal entrance

82‧‧‧ chamber

83‧‧‧ Decompression mechanism

84‧‧‧Lifting mechanism

84a‧‧‧Support

85‧‧‧ chamber

85a‧‧‧Top

85b‧‧‧ opening

85c‧‧‧ cover

85d‧‧‧Shading member

85F‧‧‧The first substrate transfer section

85P‧‧‧Processing Department

85S‧‧‧Second board transfer section

86‧‧‧Lighting Department

87‧‧‧ pedestal

87a‧‧‧The first opening

87b‧‧‧ 2nd opening

88‧‧‧ handover agency

88a‧‧‧ substrate holding member

88b‧‧‧Transportation component

88c‧‧‧Drive mechanism

88d‧‧‧Lifting mechanism

88e‧‧‧Support

88f, 88g, 88h, 88i, 88j, 89f, 89g, 89h, 89i, 89j

89‧‧‧Conveying mechanism (substrate conveying department)

89a‧‧‧ substrate holding member

89b‧‧‧transport component

89c‧‧‧Drive mechanism

90‧‧‧Heating mechanism

91‧‧‧Gas Supply Department

100‧‧‧ 栉

101‧‧‧Mobile

102‧‧‧Fixed institutions

105, 105X, 105Y‧‧‧

107‧‧‧ supporting components

109‧‧‧Fixed institutions

180‧‧‧ chamber

180a‧‧‧ substrate moved into the exit

180b‧‧‧Connecting section

180f‧‧‧-X side of cavity 180 (predetermined surface)

182‧‧‧The first base

183‧‧‧First Porter

183a‧‧‧handling mechanism

183b‧‧‧Heating mechanism

184‧‧‧Second Base

185‧‧‧Second Porter

185a‧‧‧handling mechanism

185b‧‧‧Heating mechanism

R1‧‧‧First substrate conveying path

R2‧‧‧Second substrate conveying path

D1, D2‧‧‧ direction

FIG. 1 shows a plan view of a pattern forming apparatus related to the first embodiment.

FIG. 2 is a structural diagram when the illumination unit related to the first embodiment is viewed from the + Z direction.

Fig. 3 is a diagram showing the operation of the illumination unit related to the first embodiment; Illustration.

FIG. 4 is a diagram showing the operation of the illumination unit related to the first embodiment.

FIG. 5 is a flowchart showing a pattern forming method related to the first embodiment.

FIG. 6 is a structural diagram when the illumination unit related to the second embodiment is viewed from the −Y direction.

FIG. 7 is a diagram showing the operation of a lighting unit related to the second embodiment.

FIG. 8 is a diagram showing an operation of a lighting unit related to the second embodiment.

FIG. 9 is a diagram showing an operation of a lighting unit related to the second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and referring to this XYZ orthogonal coordinate system, the positional relationship of each member will be described. The predetermined direction in the horizontal plane is defined as the X-axis direction, and the direction orthogonal to the X-axis direction in the horizontal plane is defined as the Y-axis direction, and the direction orthogonal to both the X-axis and Y-axis directions (that is, the vertical direction) is Z axis direction. The directions of rotation (tilt) about the X-axis, Y-axis, and Z-axis are defined as the θ X, θ Y, and θ Z directions, respectively.

(First Embodiment)

FIG. 1 shows a plan view of a pattern forming apparatus SPA related to this embodiment.

The pattern forming apparatus SPA includes, for example, a loader LU arranged in a line in the X direction, a coating development processing unit CD, an interface portion IF, and a control unit CONT. The pattern forming apparatus SPA is arranged so that the coating development processing unit CD is sandwiched between the loader LU and the interface portion IF. The control unit CONT integrates the processes of each part of the pattern forming apparatus SPA.

(Loader)

The loader LU is a part which carries in and out the cassette C which accommodates several board | substrates G. The loader LU includes a cassette standby portion 10 and a transport mechanism 11.

The cassette standby unit 10 is arranged at, for example, an end portion on the -X side of the pattern forming apparatus SPA, and can accommodate a plurality of cassettes C. The cassettes C stored in the cassette standby section 10 are arranged in, for example, the Y direction. An opening (not shown) is formed on the -X side of the cassette standby portion 10, and the cassette C can be transferred between the pattern forming apparatus SPA and the outside through the opening.

The conveyance mechanism 11 is disposed on the + X side of the cassette standby section 10 and conveys the substrate G between the cassette C and the coating development processing section CD. For example, two transport mechanisms 11 are arranged in the Y direction, and the two transport mechanisms 11 have the same structure, for example. The conveying mechanism 11 a arranged on the −Y side can convey the substrate G from the loader LU to the coating development processing unit CD. The transfer mechanism 11b disposed on the + Y side can transfer the substrate G from the coating development processing unit CD to the loader LU.

The transport mechanism 11 includes a transport arm 12 (12a, 12b). The conveyance arm 12 has a holding part which holds a glass substrate, and is provided so that it may expand and contract in a certain direction, for example. The transfer arm 12 is designed to be rotatable in the θ Z direction. The conveying arm 12 can be rotated in each direction of the θ Z direction, and can be oriented in each direction of the cassette standby section 10 and the coating development processing section CD. By extending and retracting the conveying arm 12, the conveying arm 12 can reach each of the cassette standby section 10 and the application development processing section CD.

(Coating Development Processing Section)

The coating development processing unit CD is a portion that performs a series of processes including photoresist coating and development on the substrate G. The coating development processing unit CD includes a washing unit SR, a dehydration baking unit DH, a coating unit CT, a pre-baking unit PR, an interface portion IF, a developing unit DV, a light unit UV, and a post-baking unit PB.

The coating development processing unit CD is designed to be divided into two sides in the Y direction. On the -Y side, the substrate G from the loader LU is transported to the mesial portion IF in the + X direction. On the + Y side, the substrate G from the mesial portion IF is transferred to the loader LU in the -X direction.

The washing unit SR is a unit connected downstream of the loader LU and cleaning the substrate G. The washing unit SR includes a dry washing device 41, a wet washing device 42, and an air knife device 43. Conveyor belt mechanisms CV1 and CV2 are respectively provided on the −X side of the dry cleaning device 41 and the + X side of the air knife device 43. A belt mechanism (not shown) for conveying the substrate G is provided on the conveyor belt mechanisms CV1 and CV2.

The dry cleaning apparatus 41 removes organic substances on the substrate G by irradiating the substrate G with ultraviolet rays such as excimer laser light. The wet cleaning device 42 includes, for example, a hair brush (not shown). The wet cleaning device 42 cleans the substrate G using a cleaning solution and the brush. The air knife device 43 includes, for example, an air knife ejection mechanism (not shown). The air knife device 43 uses an air knife ejection mechanism to form an air knife on the substrate G to remove impurities on the substrate G.

The dehydration baking unit DH is a unit connected downstream of the washing unit SR and dehydrating the substrate G. The dehydration baking unit DH includes a heating device 44, an HMDS device 46, and a cooling device 45. The heating device 44 and the HMDS device 46 are arranged in a stacking manner in the conventional Z direction. A conveyor mechanism CV3 is provided at a position overlapping the heating device 44 and the HMDS device 46 when viewed from the Z direction, and a conveyor mechanism CV4 is provided at a position overlapping the cooling device 45 when viewed from the Z direction. Between the heating device 44 and the HMDS device 46 and the cooling device 45, a transfer mechanism TR1 that can transfer the substrate G is provided. The conveyance mechanism TR1 can be designed in the same structure as the conveyance mechanism 11 provided in the loader LU, for example.

The heating device 44 can be designed, for example, as a structure having a heater in a chamber in which the substrate G can be accommodated. The heating device 44 is arranged in, for example, a plurality of stages in the Z direction. The heating device 44 can heat the substrate G at a predetermined temperature. The HMDS device 46 is a device for improving the adhesion between the photoresist film coated on the substrate G and the substrate G by causing the HMDS gas to interact with the substrate G to perform a hydrophobic treatment. The cooling device 45 has, for example, a temperature adjustment mechanism in a chamber in which the substrate G can be stored, and can cool the substrate G to a predetermined temperature.

The coating unit (coating device) CT is connected downstream of the dehydration baking unit DH, and forms a photoresist film on a predetermined area on the substrate G. The coating unit CT includes a coating device 47, a reduced-pressure drying device 48, and a peripheral portion removing device 49. The coating device 47 is a device for coating a photoresist film on the substrate G. As the coating device 47, for example, a spin coating device, a non-spin coating device, a slit nozzle coating device, or the like can be used. It can also be designed to replace these various coating devices. The reduced-pressure drying device 48 can dry the surface of the substrate G after the photoresist film is applied. The peripheral edge removing device 49 is a device that removes the photoresist film applied to the peripheral edge of the substrate G and adjusts the shape of the photoresist film.

The pre-baking unit PR is a unit that is connected downstream of the coating unit CT and performs a pre-baking process on the substrate G. The pre-baking unit PR includes a heating device 50 and a cooling device 51. A belt mechanism CV5 is provided at a position overlapping the heating device 50. A belt mechanism CV6 is provided at a position overlapping the cooling device 51. The heating device 50 and the cooling device 51 are arranged to sandwich the transport mechanism TR2 in the Y direction.

The interface portion IF is a portion connected to the exposure device EX. The mesial portion IF includes a buffer device 52, a transport mechanism TR3, a conveyor mechanism CV7, CV8, and a peripheral exposure device EE. The buffer device 52 is arranged on the + X side of the conveyance mechanism TR2 of the pre-baking unit PR. A transport mechanism TR3 is provided on the -X side of the buffer device 52.

The buffer device 52 is a device that temporarily waits for the substrate G. The buffer device 52 is provided with a chamber (not shown) that houses the substrate G, a temperature adjustment device that adjusts the temperature in the chamber, a rotation control device that adjusts the position in the θ Z direction of the substrate G housed in the chamber, and the like. . On the buffer device In the chamber 52, the temperature of the substrate G can be maintained at a predetermined temperature. The conveyor mechanisms CV7 and CV8 are cooling devices 51 arranged to sandwich the pre-baking unit PR in the X direction.

The developing unit (developing device) DV is connected to the -X side of the cooling device 51 of the pre-baking unit PR, and performs developing processing on the exposed substrate G. A photoresist film (pre-pattern) patterned in a predetermined shape is formed on the developed substrate G.

The developing unit DV includes a developing device 55, a cleaning device 56, and an air knife device 57. The developing device 55 can supply a developing solution to the substrate G and perform a developing process. The cleaning device 56 can supply a cleaning liquid to the developed substrate G, and clean the substrate G. The air knife device 57 can form an air knife on the substrate G to dry the pre-pattern on the substrate G. A conveyor mechanism CV9 is provided on the + X side of the developing device 55, and a transport mechanism TR4 is provided on the -X side of the air knife device 57. The transfer mechanism TR4 can transfer the substrate G from the air knife device 57 to the post-baking unit PB. The transport mechanism TR4 includes a robot arm that can hold the substrate G and can be raised and lowered in the Z direction.

The post-baking unit PB is connected to the downstream side of the developing unit DV and can bake the substrate G after the developing process. The post-baking unit PB includes a heating device 59 and a cooling device 60. A transport mechanism TR5 is provided between the heating device 59 and the cooling device 60. The transfer mechanism TR5 can transfer the substrate G from the heating device 59 to the cooling device 60. The heating device 59 can post-bake the developed substrate G. The cooling device 60 can cool the substrate G after baking.

The illumination unit UV is disposed on the + Z side of the post-baking unit PB, and is connected to the + Y side of the transport mechanism TR6. The illumination unit UV can be adjusted by The baked substrate G is irradiated with light of a predetermined wavelength, for example, to increase the hardness of the pre-pattern.

The conveyance mechanism TR6 can convey the substrate G from the cooling device 60 to the illumination unit UV, and transfer the substrate G from the illumination unit UV to the conveyance arm 12. The transport mechanism TR6 includes a robot arm that can hold the substrate G and can be raised and lowered in the Z direction.

In addition, when it is not necessary to cool the substrate G after the baking, the conveyance mechanism TR6 may directly convey the substrate G to the irradiation unit UV without passing through the cooling device 60.

(Lighting unit)

FIG. 2 is a structural diagram when the illumination unit UV is viewed in the −Z direction. 3 (a) and 3 (b) are structural diagrams when the illumination unit UV is viewed in the + Y direction. 4 (a) and 4 (b) are structural diagrams when the illumination unit UV is viewed in the + X direction. In addition, in FIGS. 2 to 4, in order to make the figure easy to distinguish, a part of the structure is omitted and shown.

As shown in FIGS. 2 and 3, the illumination unit UV includes a preparation device 80 and an illumination device 81.

The preparation device 80 includes a chamber 82, a pressure reducing mechanism 83, and a lifting mechanism 84. The preparatory device 80 is a preparatory room provided as, for example, a substrate G temporarily stored and conveyed to the illumination device 81. Of course, it can also be used for other purposes. The preparation apparatus 80 has, for example, a substrate carrying-out port 80a on the + Y side. In the preparatory device 80, the substrate G can be stored in a state where the pressure in the chamber 82 is reduced by the decompression mechanism 83. As the decompression mechanism 83, for example, a pump mechanism can be used. Wait.

The elevating mechanism 84 is provided so as to be movable in the Z direction. A plurality of support pins 84a are provided on the + Z side of the elevating mechanism 84, for example. The + Z side ends of the plurality of support pins 84a are provided in the same plane parallel to the XY plane, for example. Therefore, the substrate G can be supported in parallel with the XY plane by the plurality of support pins 84a. The elevating mechanism 84 can support the substrate G housed in the chamber 82, and at the same time convey the substrate G in the Z direction in the chamber 82.

The illumination device 81 is a device connected to the preparation device 80 and irradiates the substrate G. The illumination device 81 includes a chamber 85, an illumination portion 86, a pedestal 87, a transfer mechanism 88, a transfer mechanism (substrate transfer portion) 89, a heating mechanism 90, and a gas supply portion 91. The illuminating device 81 has a board | substrate carrying-out entrance 81a on the + X side, for example.

The substrate carrying-out entrance 81 a is connected to the −X side of the preparation device 80, and the substrate G can be carried in and out of the preparation device 80. In addition, a connection portion 80b for connecting to the display unit DV is provided on the + X side of the chamber 82. The connection portion 80b physically connects the chamber 82 to the development unit DV side, and also electrically connects the chamber 82 to the development unit DV by a wire or the like connecting the chamber 82.

The chamber 85 can store the substrate G subjected to the irradiation process. The cavity 85 is designed to be rectangular in a plan view, for example, a long side in a certain direction. An opening portion 85b for illumination is provided on the top portion 85a of the chamber 85. The opening portion 85 b is provided in the cavity 85 in a position corresponding to the illumination portion 86 in a plan view. In addition, a lid portion 85c is provided on the top portion 85a of the chamber 85. The cover portion 85c may be provided at a plurality of places, for example, the cover portion 85c may be provided at three places along the long side direction of the cavity 85 in a plan view. Office. The cover part 85c is provided in the top part 85a of the cavity 85, and is a position separated from the opening part 85b.

In the cavity 85, a light shielding member 85d is provided at a position sandwiching the opening 85b. The light shielding member 85 d is attached to, for example, the top portion 85 a of the cavity 85, and is a plate-shaped member that shields the light from the light irradiation unit 86. The light shielding member 85d is formed at a position where the inside of the cavity 85 can be partitioned, for example. Hereinafter, portions of the chamber 85 that are partitioned by the light shielding member 85d will be respectively referred to as a first substrate transfer portion 85F, a processing portion 85P, and a second substrate transfer portion 85S. The first substrate transfer section 85F is a portion on the side of the preparation device 80 in the chamber 85. The processing portion 85P is a portion where the opening portion 85b is formed. The second substrate conveyance unit 85S is a portion farthest from the preparation device 80.

The light radiated to the processing unit 85P is blocked by the light shielding member 85d. Therefore, the light from the light irradiating section 86 is not irradiated to the first substrate conveying section 85F and the second substrate conveying section 85S, and is only irradiated to the processing section 85P.

The illumination section 86 is attached to the opening 85 b of the chamber 85. The illuminating unit 86 includes an irradiating lamp that can irradiate both ultraviolet rays (e.g., i-rays, etc.) and visible light. . The irradiation lamp is constituted by, for example, a metal halide lamp.

Here, in this embodiment, "ultraviolet" means the lower limit of the wavelength range is about 1 nm, and the upper limit is light at the short wavelength end of visible light, and "visible light" means the lower limit of the wavelength range is about 360 to 400 nm, and the upper limit is 760 to 830 nm. Left and right light.

The wavelength of the light (irradiated light) irradiated by the irradiating portion 86 is 300 nm or more, and preferably 300 to 450 nm. By setting the wavelength of the irradiated light to 300 nm or more, the pre-pattern can be easily hardened from the surface layer to the inside. On the other hand, as long as it is below an appropriate upper limit value, generation of radiant heat can be suppressed, and excessive temperature rise during hardening can be suppressed.

The pedestal 87 is housed in the cavity 85 and is a plate-like member formed along the longitudinal direction of the cavity 85. The pedestal 87 is arranged throughout the first substrate conveyance section 85F, the processing section 85P, and the second substrate conveyance section 85S. The pedestal 87 has a first opening portion 87a and a second opening portion 87b. The first opening portion 87a is formed in a portion arranged in the first substrate conveyance portion 85F. The second opening portion 87 b is formed almost over the entire surface of the pedestal 87. The second opening portion 87b is connected to, for example, an air supply mechanism and a suction mechanism (not shown). Therefore, air can be ejected from the second opening portion 87b, and an air layer is completely formed on the base 87 by the air.

The transfer mechanism 88 includes a substrate holding member 88a, a transfer member 88b, a driving mechanism 88c, and a lifting mechanism 88d. The transfer mechanism 88 is provided so as to be movable between two devices, the preparation device 80 and the illumination device 81.

The substrate holding member 88 a includes a ridge portion 100 and a moving portion 101. The sloping portion 100 is provided, for example, so that the sloping portions face each other in the Y direction. The ridge portion 100 can hold the substrate G. The bottom of the beveled portion 100 is connected to the moving portion 101. The moving portion 101 is a wall portion provided to penetrate the + Y side and the -Y side of the chamber 85. The moving section 101 includes a fixing mechanism 102 on the + Y side and the −Y side of the chamber 85. The moving part 101 is fixed to the above-mentioned conveying member 88b through the fixing mechanism 102.

The transfer member 88b is a linear member using, for example, a steel cable. The conveying member 88b is ring-shaped in contact with at least the + Y side and the -Y side of the chamber 85. The transfer member 88b is provided on the + Y side and the -Y side of the chamber 85 in the X direction.

As shown in FIG. 2 and FIG. 4 (b), corner portions of the transport member 88 b on the −X side of the chamber 85 are guided to the Y direction by the pulley portions 88 f and 88 g, respectively. As shown in FIG. 4 (b), a plurality of pulley portions 88h are provided on the -X side end surface of the chamber 85. An end surface of the transfer member 88b on the -X side of the chamber 85 is connected to the drive mechanism 88c through the pulley portion 88h. In addition, as shown in FIG. 2 and FIG. 3 (b), the + X side of the transfer member 88 b hangs on the pulley parts 88 i and 88 j provided at the corners of the + X side of the chamber 85.

The driving mechanism 88c is provided outside the chamber 85 and on the -Z side of the chamber 85. The driving mechanism 88c includes a motor (not shown) and can drive the transmission member 88b by rotating the motor. The lifting mechanism 88d shown in FIG. 3 is provided on the -Z side of the first substrate conveying section 85F, and is provided to be movable in the Z direction by an actuator (not shown). The lifting mechanism 88d includes a plurality of support pins 88e. The support pin 88e is arranged at a position overlapping with the first opening portion 87a provided in the pedestal 87 when viewed from the Z direction. When the lifting mechanism 88d moves in the Z direction, the support pin 88e comes out of the first opening portion 87a on the base 87.

The transfer mechanism 88 can drive the transfer member 88b by a drive mechanism 88c provided outside the chamber 85. Through the transfer member 88b, the substrate holding member 88a can be moved in the X direction. In this manner, the inside of the chamber 85 can be driven by the driving mechanism 88c provided outside the chamber 85. The substrate holding member 88a moves. In addition, the transfer mechanism 88 can receive the substrate G held by the ridge portion 100 by moving the lifting mechanism 88d in the Z direction.

The transport mechanism 89 includes a substrate holding member 89a, a transfer member 89b, and a drive mechanism 89c. For example, as shown in FIG. 4 (a) and the like, the transport mechanism 89 is provided on the −Z side of the transfer mechanism 88.

The substrate holding members 89a are designed to be L-shaped when viewed from the Z direction, and a total of four substrate holding members 89a are arranged corresponding to the corner positions of the substrate G. The substrate holding member 89a can hold a corner portion of the substrate G. More specifically, the substrate holding member 89a can hold the X-side and Y-side surfaces (side surfaces) and -Z-side surfaces (bottom surfaces) among the corners of the substrate G. The four substrate holding members 80 a are fixed to the support wire 105. The supporting steel cable 105 is composed of two steel cables installed along the X direction, four steel cables installed along the Y direction, and a total of six steel cables. All the support cables 105 are under tension.

Two steel cables 105X provided in the X direction connect the substrate holding members 89a arranged in the X direction among the four substrate holding members 89a. The four steel cables 105Y provided along the Y direction are arranged to penetrate the chamber 85 in the Y direction. Among the four steel cables 105Y, the outermost steel cable 105Y on the + X side is connected to the two substrate holding members on the + X side through the support member 106. 89a. The outermost steel cable 105Y on the -X side is connected to the two substrate holding members 89a on the -X side through the support member 107.

Two fixing mechanisms 108 fixed to the transfer member 89b are provided on the + Y side of the chamber 85. The ends of the + Y side of the wire 105Y are connected to the two fixing mechanisms 108, respectively. On the -Y side of the chamber 85, a fixed The two fixing mechanisms 109 of the transfer member 89b, and the ends of the -Y side of the wire 105Y are connected to the fixing mechanisms 109, respectively.

As the transfer member 89b, a linear member such as a steel cable is used. For example, two transfer members 89b are provided. The two fixing mechanisms 108 and 109 described above are respectively fixed to the respective transport members 89b. Therefore, one of the two transfer members 89b is connected to the two substrate holding members 89a on the -X side, and the other transfer member 89b is connected to the two substrate holding members 89a on the + X side.

Each transfer member 89b is provided on the side of the chamber 85 in the X direction, for example. In addition, each conveying member 89b is annularly connected to at least the side portions on the + Y side and the -Y side of the chamber 85. Each transfer member 89b is provided on the + Y side and the -Y side of the chamber 85 in the X direction.

As shown in FIG. 2 and FIG. 4 (b), the corner portions of each transmission member 89 b on the −X side of the chamber 85 are guided in the Y direction by the pulley portions 89 f and 89 g, respectively. As shown in FIG. 4 (b), a plurality of pulley portions 89h are provided on the -X side end surface of the chamber 85. Each transfer member 89b is connected to the drive mechanism 89c at the -X side end surface of the chamber 85 through the pulley portion 89h. By the pulley parts 89f, 89g, and 89h, the two conveying members 89b can move independently without being entangled.

In addition, the arrangement of the pulley parts 88f, 89f, 88g, 89g, 88h, and 89h is not limited to this embodiment as long as the transmission member 88b and the two transmission members 89b can move independently without being entangled with each other. The configuration shown is of course other configurations.

The transfer member 89b is similar to, for example, the transfer member 88b, For example, a linear member such as a wire rope is used. As shown in FIG. 3 (b), the transfer member 89 b provided on the transfer mechanism 89 is arranged on the −Z side with respect to the transfer member 88 b provided on the transfer mechanism 88.

In addition, as shown in FIG. 2 and the like, parts of the transport member 88b and the transport member 89b, for example, provided along the cavity 85 are arranged to overlap when viewed from the Z direction. Therefore, like the conveyance member 88b, the conveyance member 89b is provided in the X direction in the side part of the chamber 85, for example.

As shown in FIG. 2 and FIG. 4 (b), the corner portions of each transmission member 89 b on the −X side of the chamber 85 are guided in the Y direction by the pulley portions 89 f and 89 g, respectively. As shown in FIG. 4 (b), a plurality of pulley portions 89h are provided on the -X side end surface of the chamber 85.

Each transfer member 89b is connected to the drive mechanism 89c through the pulley part 89h at the -X side end surface of the chamber 85. In addition, as shown in FIG. 2 and FIG. 3 (b), the + X side of each transfer member 89 b is hung on pulley parts 89 i and 89 j provided at corners of the + X side of the chamber 85.

The driving mechanism 89c is provided outside the chamber 85 and on the -Z side of the chamber 85. The driving mechanism 89c includes a motor (not shown), and is designed to drive each transmission member 89b by rotating the motor. The driving mechanism 89c is provided for each of the two transfer members 89b. For example, by synchronizing the driving mechanism 89c, the four substrate holding members 89a can be moved at the same speed.

The conveyance mechanism 89 can drive the conveyance member 89b by the drive mechanism 89c, and the board | substrate holding member 89a can be moved to an X direction through this conveyance member 89b. As such, by the drive provided outside the chamber 85 The driving of the mechanism 89c can move the substrate holding member 89a inside the chamber 85.

The heating mechanism 90 is provided in the bottom of the processing part 85P of the chamber 85, for example. The heating mechanism 90 includes, for example, a heating section such as an electric heating wire, or a temperature control section that adjusts the heating temperature of the heating section.

The gas supply unit 91 is used to supply an inert gas (gas) into the chamber 85. The inert gas is preferably nitrogen, for example. The gas supply unit 91 can be maintained in a low-oxygen state (deoxidized and dehydrated state) by supplying nitrogen into the chamber 85. Specifically, the gas supply unit 91 can supply nitrogen gas so that the oxygen concentration in the chamber 85 becomes 900 ppm or less, for example.

(Pattern formation method)

The pattern forming method using the pattern forming apparatus SPA configured as described above will be described.

FIG. 5 (a) shows a step chart of a conventional pattern forming method as a comparison, and FIG. 5 (b) shows a step chart of a pattern forming method related to this embodiment.

As shown in FIG. 5 (a), the conventional pattern forming method sequentially performs a coating step S1, a pre-baking step S2, an exposure step S3, a developing step S4, and a post-baking step S5.

In contrast, as shown in FIG. 5 (b), the pattern forming method of this embodiment is to sequentially perform the coating step S1, the pre-baking step S2, the exposure step S3, the developing step S4, and the low-temperature baking step SS1. And lighting in a low oxygen gas environment under a low oxygen gas environment and in a heated state Step SS2.

That is, the pattern forming method of this embodiment is significantly different from the conventional pattern forming method in that the pre-patterning is performed by performing post-baking treatment at a relatively low temperature and then irradiating the light in a heated state. hardening.

Each step of the pattern forming method of this embodiment will be described below.

First, the cassette C accommodating the substrate G is loaded into the cassette standby section 10 of the loader LU. The substrate G in the cassette C is transferred to the washing unit SR through the transfer mechanism 11.

The substrate G transferred to the washing unit SR passes through the conveyor mechanism CV1 and is transferred to the dry cleaning apparatus 41. The substrate G is sequentially processed by the dry cleaning device 41, the wet cleaning device 42, and the air knife device 43. The substrate G carried out by the air knife device 43 is conveyed to the dehydration baking unit DH through the conveyor mechanism CV2.

In the dehydration and baking unit DH, the heating process of the substrate G is first performed by the heating device 44. The heated substrate G is conveyed, for example, in the Z direction, and is processed by the HMDS gas in the HMDS device 46. The substrate G processed by the HMDS can be transferred to the cooling device 45 by the transfer mechanism TR1 to be cooled. The substrate G after the cooling process can be transferred to the coating unit CT by the conveyor mechanism CV4.

(Coating step S1)

Then, in the coating unit CT, a coating step of applying a photoresist composition to form a photoresist film on the substrate G is performed.

In this embodiment, a negative-type photoresist composition formed by dissolving and removing the exposed portion by exposure and development to form a pre-patterned pattern is coated on the substrate G. Examples of such a photoresist composition include the photoresist compositions (r1) and (r2) exemplified below.

<Photoresist composition (r1)>

The photoresist composition (r1) is a chemically amplified negative photoresist composition containing an alkali-soluble resin and an acid generator.

The alkali-soluble resin in the photoresist composition (r1) can be arbitrarily selected from conventionally known products according to the light source used for exposing the resin generally used as the base resin of the negative chemically amplified photoresist composition. use. Examples thereof include a phenol resin, a polyhydroxystyrene resin, and an acrylic resin.

As the alkali-soluble resin, a phenol resin, a polyhydroxystyrene resin, an acrylic resin, or the like may be used alone, or two or more kinds may be used in combination.

Content of the said alkali-soluble resin, for example, when the photoresist composition (r1) contains an alkali-soluble resin, an acid generator, and the plasticizer mentioned later, with respect to the total solid content of an alkali-soluble resin, an acid generator, and a plasticizer 100 It is preferably 30 to 99 parts by mass, and more preferably 65 to 95 parts by mass.

The acid generator in the photoresist composition (r1) is not particularly limited as long as it is a compound that generates an acid directly or indirectly by irradiation with light, and can be arbitrarily selected and used from conventionally known products.

The acid generator may be used singly or in combination of two or more kinds.

The content of the acid generator in the photoresist composition (r1) is preferably 0.01 to 5 parts by mass, and preferably 0.05 to 2 parts by mass relative to 100 parts by mass of the total solid content of the photoresist composition (r1). It is more preferably in the range of 0.1 to 1 part by mass.

In the photoresist composition (r1), components other than an alkali-soluble resin and an acid generator can be used as needed. For example, in addition to an alkali-soluble resin and an acid generator, a plasticizer may be incorporated. By blending a plasticizer, the occurrence of cracks can be suppressed. Examples of the plasticizer include acrylic resin and polyethylene resin.

In addition, the photoresist composition (r1) may contain a crosslinking agent in addition to an alkali-soluble resin and an acid generator, or in addition to an alkali-soluble resin, an acid generator, and a plasticizer.

The cross-linking agent is an amine-based compound, and examples thereof include melamine resin, urea resin, guanamine resin, glycoluril-formaldehyde resin, succinamide-formaldehyde resin, ethylene urea-formaldehyde resin, and the like. In particular, alkoxymethyl An alkoxymethylated amine-based resin such as a melamine resin or an alkoxymethylated urea resin.

In the photoresist composition (r1), in addition to the above components, a fluorine-containing polymer having a structural unit containing an alkali dissociable group (preferably an alkali dissociable group containing a fluorine atom) may be blended as necessary. Compound.

The "base dissociable group" refers to an organic group that can be dissociated by the action of a base. That is, the "alkali dissociable group" is dissociated by the action of an alkali imaging solution (for example, a 2.38% by mass TMAH aqueous solution at 23 ° C).

If the base dissociative group is dissociated by the action of an alkali imaging solution, The hydrophilic group improves the affinity for the alkali developing solution. That is, the fluorine-containing polymer compound is a "polymer compound having a fluorine atom" which is highly hydrophobic and also has an "alkali dissociative group". Therefore, the alkali imaging solution is subjected to the action of the alkali imaging solution. Improved affinity. Therefore, by using this negative-type photoresist composition, a photoresist film which is hydrophobic at the time of immersion exposure and can be well dissolved in an alkali developing solution during development can be formed.

In the photoresist composition (r1), in addition to the above components, quenchers such as secondary or tertiary amines such as triethylamine, tributylamine, dibutylamine, and triethanolamine may be added as necessary; An active agent, a functional silane coupling agent as an adjuvant, a filler, a colorant, a viscosity modifier, a defoamer, and the like.

The photoresist composition (r1) can be prepared by dissolving an alkali-soluble resin, an acid generator, and other components in an organic solvent as necessary.

<Photoresist composition (r2)>

The photoresist composition (r2) is a negative-type photoresist composition containing an alkali-soluble resin, a cationic polymerization initiator, and a sensitizer.

Examples of the alkali-soluble resin in the photoresist composition (r2) include a polyfunctional epoxy resin. The polyfunctional epoxy resin is not particularly limited as long as it is a photoresist type epoxy resin having a sufficient epoxy group in one molecule to form a thick film. Examples of the polyfunctional epoxy resin include a polyfunctional phenol novolac epoxy resin and a polyfunctional epoxy resin. O-cresol novolac epoxy resin, polyfunctional triphenyl novolac epoxy resin, polyfunctional bisphenol A novolac epoxy resin, etc.

In addition, as the alkali-soluble resin, an alkali-soluble base material having photocurability can be used.

The cationic polymerization initiator in the photoresist composition (r2) generates a cationic part when it is irradiated with excimer laser, X-ray, or electron beam, such as ultraviolet, far ultraviolet, KrF, ArF, etc. The moiety can be a compound that is a polymerization initiator. This cationic polymerization initiator can be arbitrarily selected and used from conventionally known products.

The cationic polymerization initiator may be used alone or as a mixture of two or more.

The content of the cationic polymerization initiator in the photoresist composition (r2) is preferably 0.5 to 20 parts by mass relative to 100 parts by mass of the alkali-soluble resin. By setting the content of the cationic polymerization initiator to 0.5 parts by mass or more, sufficient sensitivity can be obtained. On the other hand, by setting it to 20 parts by mass or less, the characteristics of the photoresist film can be improved.

In the photoresist composition (r2), the sensitizer is preferably composed of a naphthalene derivative or anthracene or a derivative thereof which can be crosslinked with the above-mentioned polyfunctional epoxy resin. The sensitizing function of such a sensitizer can further increase the sensitivity of the photoresist composition. Among these, a sensitizer composed of dihydroxynaphthalene or anthracene having two hydroxyl groups is particularly preferred. Since these sensitizers have a plurality of aromatic rings, they can increase the hardness of the photoresist pattern.

The sensitizer can be used alone or as a mixture of two or more.

The content of the sensitizer in the photoresist composition (r2) is preferably 1 to 50 parts by mass relative to 100 parts by mass of the alkali-soluble resin.

In the photoresist composition (r2), alkali may be used as necessary. Components other than soluble resin, cationic polymerization initiator, and sensitizer.

From the viewpoint of further improving the curability of, for example, a photoresist pattern, an oxetane derivative is preferably used.

In addition, a photopolymerization initiator for a photosensitive resin composition other than the above-mentioned cationic polymerization initiator may be used. In addition, a photopolymerizable compound may be blended from the viewpoint that hardening failure is unlikely to occur during exposure and sufficient heat resistance is easily obtained.

In addition, in the photoresist composition (r2), miscible additives such as resins, plasticizers, stabilizers, colorants, couplers, etc. added to improve the performance of the photoresist pattern can be appropriately blended as needed. Conventionally known substances such as mixtures and levelers.

The photoresist composition (r2) can be prepared by dissolving an alkali-soluble resin, a cationic polymerization initiator, a sensitizer, and other components than necessary in an organic solvent.

(Pre-baking step S2)

The substrate G after the coating process is transported to a pre-baking unit PR, a pre-baking process is performed in the heating device 50, and a cooling process is performed in the cooling device 51. The substrate G processed in the pre-baking unit PR is transferred to the interface portion IF by the transfer mechanism TR2.

(Exposure step S3)

In the mesial portion IF, for example, after the temperature of the buffer device 52 is adjusted, the peripheral exposure device EE performs peripheral exposure. After the peripheral exposure, The substrate G is conveyed to the exposure apparatus EX by the conveyance mechanism TR3 for exposure processing. The substrate G after the exposure process is carried to the developing unit DV after being subjected to a heating process and a cooling process.

(Development step S4)

The substrate G after the exposure process is carried to the developing unit DV after being subjected to a heating process and a cooling process. The developing unit DV sequentially performs developing processing, cleaning processing, and drying processing on the substrate G to form a predetermined pattern on the substrate G.

(Low temperature baking step SS1)

After the drying process, the substrate G is conveyed to the post-baking unit PB by the conveying mechanism TR4, and the pre-pattern after the development is heated. In the post-baking unit PB, the substrate G (pre-patterning) is first heated by the heating device 59 at a temperature lower than the post-baking processing temperature (200 ° C. or higher) of the conventional pattern forming method. The pre-pattern heating temperature in the heating device 59 is set to 150 ° C or lower. In this embodiment, the pre-patterned heating temperature of the heating device 59 is set to, for example, 120 ° C.

Here, in consideration of the total amount of heat applied to the pre-pattern, the temperature condition when the substrate G is heated by the heating device 59 does not indicate a set temperature of a heating means such as a hot plate on which the substrate G is disposed, but means that the The temperature of the pre-pattern itself is heated by a plate or the like or by radiation of light. In addition, the temperature of the pre-pattern itself can be measured by using, for example, a thermocouple.

Incidentally, the pre-pattern will be generated when the photo processing is described later. Raw photopolymerization and hardening. If there are many residual solvents in the pre-pattern, such a photopolymerization reaction does not easily progress, and therefore it is difficult to harden the pre-pattern well.

In order to solve this problem, in this embodiment, before the light treatment, the pre-pattern is heated by the heating device 53 of the post-baking unit PB, and the residual solvent (organic solvent) contained in the pre-pattern is evaporated and removed. This allows the photopolymerization reaction to proceed favorably during the irradiation treatment.

(Low-oxygen gas environment illumination step SS2)

The post-baking substrate G is cooled in the cooling device 60 and is transported to the illumination unit UV by a transport mechanism TR6. In the illumination unit UV, the substrate G is first transferred into the chamber 82 of the preparation device 80. After the substrate G is transferred into the chamber 82 through the substrate carrying-out inlet 80a, the substrate carrying-out inlet 80a is closed. In order to generate a low-oxygen gas environment in a short time, the chamber 82 is closed, and the decompression mechanism 83 is operated to decompress deal with. After the decompression process, the lifting mechanism 84 is moved to the + Z side, and the substrate G is supported by the support pin 84a. At this time, the substrate G is held up to a position (a position on the + Z side) higher than the height of the substrate holding member 88 a of the transfer mechanism 88.

After the substrate G is supported, the crotch-shaped portion 100 of the substrate holding member 88a is inserted into the chamber 82, and the crotch-shaped portion 100 is arranged on the -Z side of the substrate G. After arranging the ridge portion 100, the lifting mechanism 84 is moved to the -Z side so that the supported substrate G is moved to the -Z side. Since the ridge portion 100 is arranged on the -Z side of the substrate G, the substrate G is transferred to the ridge portion 100 from the support pin 84a.

After receiving the substrate G, the substrate holding member 88a is moved to the -X side by the transmission member 88b driven by the driving mechanism 88c, and the substrate G is carried into the chamber 85. After the substrate G is carried in, the chamber 88 is hermetically closed, and the gas supply unit 91 is operated, so that the inside of the chamber 85 becomes a low-oxygen gas environment. In addition, the inside of the chamber 85 is made into a low-oxygen gas environment, the driving mechanism 88c is further driven, and the substrate G is arranged to overlap the first opening portion 87a of the first substrate conveying portion 85F when viewed from the Z direction.

After the substrate G is arranged, the lifting mechanism 88d is moved to the + Z side, and the support pin 88e is extended from the first opening 87a. Since the substrate G is disposed on the + Z side of the support pin 88e, the substrate G is transferred from the substrate holding member 88a to the holding pin 88e. After the substrate G is handed over, the driving mechanism 89c is driven to move the substrate holding member 89a to the -Z side of the substrate G. At this time, the driving mechanism 89c is driven so that each of the four substrate holding members 89a overlaps the four corners of the substrate G when viewed from the Z direction.

After the substrate holding member 89a is arranged, the lifting mechanism 88d is moved to the -Z side, and the substrate G is moved to the -Z side. Since the substrate holding member 89a is arranged on the -Z side of the substrate G, the substrate G is carried to the substrate holding member 89a by the support pin 88e. When the substrate G is transported, for example, an air supply unit (not shown) is operated, and air is ejected and sucked into the second opening portion 87b at a predetermined ejection amount and intake amount to form an air layer on the base 87. When the substrate G is transported, since an air layer is formed between the substrate G and the pedestal 87, the substrate G is held by the air layer and the substrate holding member 89a. Therefore, even if only the corners of the substrate G are held by the substrate holding member 89a, the substrate G will not bend or crack, and will be held securely.

After the substrate G is held by the substrate holding member 89a, the driving mechanism 89c is driven to transfer the substrate G to the processing unit 85P. Since the substrate G floats on the air layer and is transported, the substrate G can be transported with a low driving force. Therefore, the transfer member 89b can complete the operation with a low load.

After the substrate G is transferred to the processing unit 85P, the heating mechanism 90 is operated. The heating mechanism 90 heats the substrate G (a pre-pattern formed on the substrate G) to a temperature of 100 ° C to 120 ° C. After the temperature of the substrate G reaches 100 ° C. to 120 ° C., the illumination unit UV carries the substrate G to the −X side in the processing unit 85P, and simultaneously drives the illumination unit 86.

With this operation, in the processing unit 85P, the surface of the substrate G is irradiated with light of a predetermined wavelength by the light irradiation unit 86 while the substrate G is being transported and heated. The light shielding members 85d are provided on the + X side and the -X side of the processing section 85P, so that light does not leak out of the processing section 85P during processing.

In the processing unit 85P, the substrate G can be irradiated at the same time. Therefore, the substrate G is slowly carried out of the second substrate transfer unit 85S from the portion where the irradiation is completed. When all the irradiation of the substrate G is completed, the entire substrate G is stored in the second substrate conveyance unit 85S. After the illumination is completed, the operations of the illumination unit 86 and the heating mechanism 90 are stopped, and the substrate G is transferred to the first substrate transfer unit 85F.

The substrate G transferred to the first substrate transfer unit 85F is transferred by the transfer mechanism 89 to the substrate transfer mechanism 88, and is transferred from the chamber 85 to the chamber 82 by the substrate transfer mechanism 88. In the chamber 82, the substrate G is transferred from the substrate transfer mechanism 88 to the lifting mechanism 84, and then passes through the In the illustrated conveying mechanism, the substrate G is transferred from the inside of the chamber 82 to the outside of the illumination unit UV through the substrate loading / unloading inlet 80a.

As described above, according to the illumination unit UV of this embodiment, the pre-patterned type of the substrate G heated in the low-oxygen gas environment is irradiated in the chamber 82. In this embodiment, before baking, post-baking is performed at a lower temperature than in the past, and the residual solvent contained in the pre-pattern which is a hindrance to the photopolymerization reaction is removed. Therefore, according to this embodiment, since the photopolymerization reaction of the pre-patterned photoresist film proceeds well in a low oxygen state, a photoresist pattern with high hardness can be formed.

Next, the substrate G on which the photoresist pattern is formed is transferred to the transfer arm 12 through the transfer mechanism TR6, and is stored in the cassette C through the transfer mechanism 11. In this way, a series of pattern formation processes including a coating process, an exposure process, and a development process are completed for the substrate G.

As described above, according to this embodiment, the pre-patterning pattern in which the residual solvent is removed by post-baking is irradiated in a low-oxygen gas environment while being heated to increase the hardness of the photoresist pattern pattern. By using such a high-resistance photoresist pattern, a negative photoresist pattern having excellent durability and heat resistance can be obtained. In addition, according to the pattern forming method of this embodiment, compared with a case where the photoresist pattern is hardened by performing post-baking only at a high temperature in the past, the processing temperature during pattern hardening can be lowered, so that the TFT element can be prevented. And other equipment causing damage.

The photoresist pattern produced by this embodiment is excellent in heat resistance and durability, and is therefore suitable for use as an interlayer insulation of an active matrix substrate used in, for example, a liquid crystal display device, an organic EL display device, and the like. Film or film coating materials for semiconductor devices (surface protection film, bump protection film, MCM (multi-chip module) interlayer protection film, contact coating film), packaging materials (sealing materials, sticky crystal materials)

(Second Embodiment)

Next, a second embodiment of the present invention will be described.

This embodiment is different from the above-mentioned embodiment in the structure of the illumination unit. Therefore, in the following description, the structure of the illumination unit is used as a main description. The same or common structures as those in the above embodiments are denoted by the same symbols, and detailed descriptions thereof are omitted.

FIG. 6 is a structural diagram when the illumination unit UV1 of the present embodiment is viewed in the + Y direction. As shown in FIG. 6, the illumination unit UV1 includes a chamber 180, an illumination unit 86, a first pedestal 182, a first conveyance unit 183, a second pedestal 184, and a second conveyance unit 185. The chamber 180 has a cubic box shape, and an inert gas is supplied from a gas supply unit (not shown), so that the inside is in a low oxygen state (deoxidation and dehydration state). The cavity 180 is disposed on a side surface (+ Y side) of the post-baking unit PB. In addition, in the present embodiment, the cavity 180 of the illumination unit UV1 is disposed on the upper surface (+ Z side) of the post-baking unit PB.

A substrate carrying-in exit 180a is provided on the -X side (predetermined surface) 180f of the chamber 180. The substrate carrying-in exit 180 a allows the substrate G to be carried into and out of the chamber 180. In addition, a connection portion 180b for connecting to the post-baking unit PB is provided on a predetermined surface 180f of the chamber 180. The connection portion 180b physically connects the chamber 180 to the back-baking unit PB side, and also electrically connects the chamber 180 with the back-baking unit PB by connecting wires and the like to the chamber 180.

In this embodiment, the light-emitting portion 86 is mounted on the + Z side of the cavity 180, and the end portion on the + Z side is arranged to protrude outside the cavity 180.

The first pedestal 182 is disposed inside the chamber 180. The first pedestal 182 supports a substrate G carried into the chamber 180. The first pedestal 182 is disposed on the + X side of the substrate carry-in exit 180a, and can support the substrate G carried in through the substrate carry-in exit 180a. The first pedestal 182 includes a transport mechanism (not shown) that transports the substrate G in the X direction. In addition, the first pedestal 182 can be raised and lowered in the Z direction. The first pedestal 182 is movable between a position equal to the height of the first conveyance section 183 (position in the Z direction) and a position equal to the height of the second conveyance section 185. The first pedestal 182 can support the substrate G from the second conveyance section 185 at a position equal to the height of the second conveyance section 185. The first pedestal 182 can be raised and lowered while supporting the substrate G.

The first transfer unit 183 can transfer the substrate G transferred from the first base 182. The first conveyance unit 183 includes a conveyance mechanism 183a and a heating mechanism 183b. The conveyance mechanism 183a can convey the substrate G in the + X direction while keeping the posture of the substrate G parallel to the horizontal plane (XY plane). When the operation of the conveyance mechanism 183a is stopped, the substrate G can be held while supporting the substrate G. The heating mechanism 183b can adjust the temperature of the substrate G which is subsequently irradiated with light to an appropriate temperature. For example, the heating mechanism 183b can maintain the temperature of the substrate G at about 100 ° C.

The second pedestal 184 is provided inside the chamber 180 and at the end on the + X side. The second pedestal 184 can support the substrate G transferred from the first transfer section 183. The second pedestal 184 has a substrate G for conveying in the X direction. Also, a transport mechanism is not shown. In addition, the second pedestal 184 can be raised and lowered in the Z direction. The second pedestal 184 is movable between a position equal to the height of the first conveyance section 183 (position in the Z direction) and a position equal to the height of the second conveyance section 185. The second pedestal 184 can be raised and lowered while supporting the substrate G. When the second pedestal 184 is disposed at a position equal to the height of the second conveyance section 185, the substrate G can be conveyed to the second conveyance section 185.

The second transfer unit 185 can transfer the substrate G transferred from the second base 184. The second conveyance section 185 is disposed on the + Z side of the first conveyance section 183. The second conveyance section 185 is arranged to face the light irradiation section 86. The second conveyance unit 185 includes a conveyance mechanism 185a and a heating mechanism 185b. The conveyance mechanism 185a can hold the attitude | position of the board | substrate G parallel to a horizontal plane (XY plane), and can convey to the -X direction. When the operation of the conveyance mechanism 185a is stopped, the substrate G can be held while supporting the substrate G. The heating mechanism 185 b is disposed at a position that sandwiches the substrate G between the Z direction and the illumination unit 86. The heating mechanism 185b can heat the substrate G which is irradiated by the irradiating unit 86 from the -Z side. The heating mechanism 185b can heat the substrate G supported by the conveyance mechanism 185a. When the first pedestal 182 is arranged on the -X side of the first conveyance section 185, the conveyance mechanism 185 a can convey the substrate G to the first pedestal 182.

The substrate G carried in from the substrate carrying-in exit 180a is transferred to the second base 184 in the + X direction via the first base 182 and the first conveyance unit 183. In this manner, a substrate conveyance path R1 for conveying the substrate G in a certain direction (+ X direction) is formed in the chamber 180. The substrate G supported on the second base 184 passes through the second base 184 and the second conveyance unit. 185 is carried to the first pedestal 182 in the -X direction. In this manner, the second substrate conveyance path R2 for conveying the substrate G in a certain direction (-X direction) is formed in the chamber 180. The second substrate conveyance path R2 is arranged to face the first substrate conveyance path R1 and is arranged side by side in the + Z direction.

In the present embodiment, the illumination unit 86 may also move along the transport path (the second substrate transport path R2) of the substrate G that receives the light. That is, the illumination unit 86 is movable in a direction D1 and a direction D2 parallel to the X-axis in FIG. 9. For example, the chamber 180 may be provided with a horizontal movement mechanism that moves the illumination unit 86 horizontally. By designing such a structure, the light-emitting portion 86 can be moved in the direction D1 or the direction D2, and the substrate G can be irradiated at the same time. Thereby, the relative speed of the board | substrate G and the light irradiation part 86 conveyed in the -X direction on the 2nd conveyance part 185 can be changed freely. As a result, the amount of light to be irradiated to the substrate G and the yield time can be freely set.

Specifically, by moving the illumination unit 86 in the same direction (direction D1) as the substrate G and performing illumination at the same time, the relative speed of the illumination unit 86 with respect to the substrate G decreases. Therefore, it is possible to increase the output of the illumination unit 86 without increasing the output. Increase the amount of light on the substrate G. From another point of view, even if the conveying speed is increased, the amount of irradiation of the substrate G can be maintained at the same level. Therefore, the conveying speed of the substrate G in the device can be increased, and the throughput can be improved.

On the other hand, if the illumination unit 86 is moved in the opposite direction (direction D2) from the substrate G and the illumination is performed at the same time, the relative speed between the substrate G and the illumination unit 86 increases, so the time required to irradiate the substrate G (the production time ) Becomes shorter. In this way, when the illumination step is the bottleneck, Increase in output. In addition, by changing the moving speed of the light irradiation section 86, the amount of light to the substrate G can be adjusted without changing the conveyance speed of the substrate G or the output of the light irradiation section 86. When the illumination unit 86 is moved in the direction D2, it is easy to reduce the amount of illumination of the substrate G.

In addition, the movement direction of the light irradiation part 86 and the board | substrate conveyance direction of the 2nd conveyance part 185 should just be substantially parallel. Specifically, the included angle between the moving direction of the illumination section 86 and the substrate conveyance direction of the second conveyance section 185 may be 30 degrees or less.

Next, the illumination processing in the illumination unit UV1 of this embodiment will be described.

7 to O are explanatory diagrams of the operation of the illumination unit UV1. Hereinafter, in the case where a plurality of substrates G are carried in the illumination unit UV1, they are denoted as G1, G2, G3, ... according to the order in which the plurality of substrates are carried.

The control unit CONT moves the robot arm holding the substrate G in the + Z direction, and as shown in FIG. 7 (a), the substrate G1 is carried into the chamber 180 from the substrate carry-in exit 180 a. In the illumination unit UV1, the first pedestal 182 is disposed at a position equal to the height of the first conveyance portion 183. Thereby, the substrate G1 carried into the chamber 180 can be disposed on the first base 182.

Next, as shown in FIG. 7 (b), the control unit CONT transports the substrate G1 placed on the first pedestal 182 in the + X direction, and moves the substrate G1 to the first transport unit 183. After the control unit CONT transfers the substrate G1 to the substantially central portion in the X direction of the first transfer unit 183, it temporarily stops the transfer mechanism 183a and operates the heating mechanism 183b. With this operation, the substrate G1 supported by the transport mechanism 183a can be adjusted by the heating mechanism 183b. Set to the desired temperature.

After the substrate G1 is warmed up for a certain period of time, the control unit CONT transports the substrate G1 in the + X direction by the transport mechanism 183a as shown in FIG. 7 (c). The substrate G1 is transferred to the second pedestal 184 by the first conveying portion 183.

In addition, the control unit CONT carries the other substrate G2 transferred from the developing unit DV into the chamber 180. The control unit CONT moves the robot arm of the transfer mechanism TR4 to the substrate carry-in exit 180a, and moves the substrate G2 from the substrate carry-in exit 180a into the chamber 180. The substrate G2 carried into the chamber 180 is placed on the first base 182.

Next, as shown in FIG. 8 (a), the control unit CONT moves the second pedestal 184 that supports the substrate G1 to the + Z side, and aligns the height position of the second conveyance unit 185. In addition, the control unit CONT transports the substrate G2 placed on the first base 182 in the + X direction, and moves the substrate G2 to the first transport unit 183. After the control unit CONT transports the substrate G2 to a substantially central portion in the X direction of the first transporting unit 183, it temporarily stops the transporting mechanism 183a and operates the heating mechanism 183b. With this operation, the substrate G2 supported by the conveyance mechanism 183a can be adjusted to a desired temperature by the heating mechanism 183b.

Next, as shown in FIG. 8 (b), the control unit CONT moves the first pedestal 182 in the + Z direction and aligns the height position of the second conveyance unit 185. In addition, the control unit CONT transports the substrate G1 placed on the second base 184 in the -X direction, and moves the substrate G1 to the second transport unit 185. The control unit CONT controls the substrate G1 transferred to the second transfer unit 185 by The illumination unit 86 performs illumination. The control unit CONT causes the conveyance mechanism 185a to operate, moves the substrate G1 in the -X direction, and simultaneously operates the heating mechanism 185b to maintain the temperature of the substrate G1 at about 100 ° C.

In this state, the control unit CONT causes the illumination unit 86 to emit light. The light emitted from the light irradiating section 86 is irradiated onto the substrate G1. With this operation, it is possible to irradiate the substrate G1 that is moved horizontally by the conveyance mechanism 185a. Illumination continues until the entire substrate G1 passes the illumination unit 86 in the -X direction. As shown in FIG. 8 (c), the substrate G1 conveyed in the -X direction by the second conveyance unit 185 is placed on the first base 182 arranged in advance. After the substrate G1 is placed on the first pedestal 182, the control portion CONT moves the first pedestal 182 in the -Z direction and aligns the height position with the first conveying portion 183.

Next, as shown in FIG. 9 (a), the control unit CONT uses the robot arm of the first pedestal 182 and the transport mechanism TR4 to carry out the substrate G1 on the first pedestal 182. In addition, the control unit CONT moves the substrate G2 preheated in the first conveyance unit 183 in the + X direction, and places the substrate G2 on the second base 184.

Next, as shown in FIG. 9 (b), the control unit CONT moves the second pedestal 184 supporting the substrate G2 to the + Z side, and aligns the height position of the second conveyance unit 185. In addition, the control unit CONT transports the substrate G3 placed on the first base 182 in the + X direction, and moves the substrate G3 to the first transport unit 183. After the control unit CONT transports the substrate G3 to a substantially central portion in the X direction of the first transporting unit 183, it temporarily stops the transporting mechanism 183a and warms up the substrate G3.

Then, the control unit CONT sequentially irradiates the substrate G2 and the substrate G3 in the same manner as described above, and transmits the substrate G2 and the substrate G3 through the substrate carry-in exit 180a and then carries it out from the chamber 180. In addition, a new substrate is carried into the chamber 180 through the substrate carrying-in exit 180a, and the light L is irradiated. The substrates G1 to G3 carried out from the chamber 180 are transferred to the post-baking unit PB through the transfer mechanism TR4. By repeating the above operations, the substrate G that has passed through the developing unit DV can be subjected to a light treatment (hardening treatment).

As described above, according to this embodiment, the substrate carrying-in exit 180a that allows the substrate G to be carried in and out is provided on the predetermined surface 180f, and the substrate G is carried into the chamber 180 through the substrate carrying-in outlet 180a and carried in through the substrate. The outlet 180 a is moved inside the chamber 180 so as to be moved outside the chamber 180. Therefore, the substrate G is carried in and out on the same side (predetermined side) of the chamber 180. Thereby, the space necessary for the transfer of the substrate G between the existing devices can be saved, and therefore, the illumination section 86 with a small occupied space can be provided.

In addition, in the irradiation step shown in FIG. 9 (b), the control unit CONT can also move the irradiation unit 86 in the direction D1 or the direction D2, and simultaneously irradiate the substrate G1. For example, when the illumination unit 86 is moved in the direction D1 and the substrate G1 is illuminated at the same time, the control unit CONT moves the substrate G1 from the second base 184 to the second stage while the illumination unit 86 is arranged at a predetermined movement start position. When the front end of the substrate G1 reaches the above-mentioned movement start position, the conveyance unit 185 starts to move the illumination unit 86 in the direction D1 and starts to irradiate the substrate G1 at the same time. The control unit CONT causes the illumination unit 86 to move at a slower speed than the substrate G1, and simultaneously irradiates light. Control department The CONT stops the movement of the illumination unit 86 when the illumination unit 86 moving slower than the substrate G1 reaches the position of the rear end of the substrate G1. Then, the control unit CONT moves the illumination unit 86 in the direction D2 and returns to the movement start position.

The embodiment of the present invention has been described above, but it is not limited to the content of the above embodiment, and may be appropriately changed within a range not departing from the gist of the invention.

<Evaluation>

The photoresist pattern formed using the pattern forming device SPA was evaluated.

(Example 1)

In Example 1, the irradiation unit UV performs irradiation treatment on the photoresist film baked by the post-baking unit PB through the irradiation portion 86 with a cumulative exposure of 300 mJ / cm ² . The illumination unit UV does not heat the substrate G by the heating mechanism 90. The irradiation unit UV supplies nitrogen gas during the irradiation, so that the oxygen concentration in the chamber 82 becomes 75 ppm.

(Example 2)

In Example 2, the irradiation unit UV performs irradiation treatment on the photoresist film baked by the post-baking unit PB through the irradiation portion 86 with a cumulative exposure of 300 mJ / cm ² . In addition, when the illumination unit UV is illuminated, the substrate G is heated at 120 ° C. by the heating mechanism 90. The irradiation unit UV supplies nitrogen gas during irradiation, so that the oxygen concentration in the chamber 82 becomes 450 ppm.

(Example 3)

In the embodiment, the irradiation unit UV performs irradiation treatment on the photoresist film baked by the post-baking unit PB through the irradiation portion 86 with a cumulative exposure of 1800 mJ / cm ² . The irradiation unit UV heats the substrate G at 120 ° C. by a heating mechanism 90. The irradiation unit UV supplies nitrogen gas during irradiation, so that the oxygen concentration in the chamber 82 becomes 610 ppm.

(Comparative example 1)

In Comparative Example 1, the photoresist film baked by the post-baking unit PB was not illuminated. That is, the cumulative exposure amount of the illumination section 86 is 0 mJ / cm ² . In addition, heating is not performed by the heating mechanism 90, and the inside of the chamber 82 is an atmospheric environment.

(Comparative example 2)

In Comparative Example 2, the irradiation unit UV irradiates the photoresist film baked in the post-baking unit PB by the irradiation unit 88 with a cumulative exposure of 1000 mJ / cm ² . The illumination unit UV does not heat the substrate G by the heating mechanism 90. When the illumination unit UV is illuminated, the inside of the chamber 82 is an atmospheric environment.

(Evaluation of film hardness)

The photoresist patterns obtained in Examples 1 to 3 and Comparative Examples 1 and 2 were respectively subjected to a pencil hardness test. The pencil hardness of the photoresist-type surface film was then tested. In this test, a load of 350 g was applied to the tip of the pencil.

Table 1 shows the evaluation results of the hardness of the photoresist pattern.

As shown in Table 1, the hardness of the photoresist type pencils obtained in Comparative Examples 1 and 2 was F and B, and the photoresist type pencils obtained in Examples 1 to 3 were H, 2H, and 2H. In this way, it was confirmed that the photoresist patterns obtained in Examples 1 to 3 had higher film hardness than the photoresist patterns obtained in Comparative Examples 1 and 2.

From this, it can be seen that the cases of Examples 1 to 3 are different from Comparative Examples 1 and 2. By irradiating light in a low-oxygen gas environment, the photopolymerization reaction proceeds well, and the hardness of the photoresist pattern can be improved.

In addition, it is considered that the entire photoresist pattern obtained in Examples 1 to 3 is sufficiently hardened even inside, and durability and heat resistance are considered to be high.

In addition, it was confirmed that the hardness of the photoresist type pencil obtained in Example 2 was 2H, which was higher than the hardness K of the photoresist type pencil obtained in Example 1.

From this result, it is considered that when the substrate G is heated by the heating mechanism 90 when the light is irradiated in a low-oxygen gas environment, the photopolymerization reaction can be promoted and the hardness of the photoresist pattern can be further improved.

Claims (4)

A photoresist pattern forming device includes: a coating device that coats a negative photoresist composition used to form a permanent photoresist to form a photoresist film on a substrate; and performs development processing of the photoresist film. Forming a pre-pattern developing device; a heating device for heating the aforementioned pre-pattern after development; and an illumination device for illuminating the heated pre-pattern in a low-oxygen gas environment, the aforementioned illumination device is provided with The heating mechanism is disposed on the bottom of the chamber and heats the substrate when the substrate is illuminated in the low-oxygen gas environment. For example, the photoresist pattern forming device of the first patent application range, wherein the aforementioned heating device heats the aforementioned pre-pattern below 150 ° C. A photoresist pattern forming method includes: a coating step of coating a negative photoresist composition used to form a permanent photoresist to form a photoresist film on a substrate; and performing a development process of the aforementioned photoresist film. A developing step of forming a pre-pattern; a heating step of heating the aforementioned pre-pattern after the aforementioned developing step; and a light-irradiating step of applying a light treatment to the heated pre-pattern in a low-oxygen gas environment in the foregoing In the irradiation step, a heating mechanism provided at the bottom of the chamber is used, and the substrate is heated when the irradiation is performed in the low oxygen gas environment. For example, the method for forming a photoresist pattern in item 3 of the patent application range, wherein the aforementioned heating step is heating the aforementioned pre-pattern below 150 ° C.