TWI679672B - 電漿處理裝置 - Google Patents
電漿處理裝置 Download PDFInfo
- Publication number
- TWI679672B TWI679672B TW104135241A TW104135241A TWI679672B TW I679672 B TWI679672 B TW I679672B TW 104135241 A TW104135241 A TW 104135241A TW 104135241 A TW104135241 A TW 104135241A TW I679672 B TWI679672 B TW I679672B
- Authority
- TW
- Taiwan
- Prior art keywords
- frequency
- frequency antenna
- antenna
- antenna element
- plasma
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 120
- 239000003990 capacitor Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000008878 coupling Effects 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 230000001939 inductive effect Effects 0.000 claims abstract description 4
- 238000004904 shortening Methods 0.000 claims description 6
- 230000003993 interaction Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 30
- 239000007789 gas Substances 0.000 description 40
- 235000012431 wafers Nutrition 0.000 description 33
- 238000010521 absorption reaction Methods 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000005404 monopole Effects 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000004804 winding Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
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- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- LFHISGNCFUNFFM-UHFFFAOYSA-N chloropicrin Chemical compound [O-][N+](=O)C(Cl)(Cl)Cl LFHISGNCFUNFFM-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-225230 | 2014-11-05 | ||
| JP2014225230A JP6623511B2 (ja) | 2014-11-05 | 2014-11-05 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201630030A TW201630030A (zh) | 2016-08-16 |
| TWI679672B true TWI679672B (zh) | 2019-12-11 |
Family
ID=55853448
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104135241A TWI679672B (zh) | 2014-11-05 | 2015-10-27 | 電漿處理裝置 |
| TW108140484A TW202013430A (zh) | 2014-11-05 | 2015-10-27 | 電漿處理裝置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108140484A TW202013430A (zh) | 2014-11-05 | 2015-10-27 | 電漿處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20160126065A1 (https=) |
| JP (1) | JP6623511B2 (https=) |
| KR (2) | KR101872076B1 (https=) |
| TW (2) | TWI679672B (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108024436A (zh) * | 2016-11-01 | 2018-05-11 | 中微半导体设备(上海)有限公司 | 一种等离子体处理装置 |
| US11222769B2 (en) * | 2017-05-26 | 2022-01-11 | Applied Materials, Inc. | Monopole antenna array source with gas supply or grid filter for semiconductor process equipment |
| JP7002268B2 (ja) * | 2017-09-28 | 2022-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7139181B2 (ja) * | 2018-07-26 | 2022-09-20 | ワイエイシイテクノロジーズ株式会社 | プラズマ処理装置 |
| JP7225058B2 (ja) * | 2019-08-19 | 2023-02-20 | 株式会社東芝 | 高周波アンテナ及びプラズマ処理装置 |
| JP7233348B2 (ja) | 2019-09-13 | 2023-03-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP2021077451A (ja) * | 2019-11-05 | 2021-05-20 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| KR20230056214A (ko) * | 2021-10-20 | 2023-04-27 | 세메스 주식회사 | 플라즈마 처리 장치 및 이를 이용한 플라즈마 처리 방법 |
| KR102735887B1 (ko) * | 2021-11-18 | 2024-12-02 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040124779A1 (en) * | 2002-12-31 | 2004-07-01 | Howald Arthur M. | Plasma processor apparatus and method, and antenna |
| US20110094995A1 (en) * | 2009-10-27 | 2011-04-28 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US20110104902A1 (en) * | 2009-10-27 | 2011-05-05 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP2011119659A (ja) * | 2009-10-27 | 2011-06-16 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| US20120190207A1 (en) * | 2011-01-25 | 2012-07-26 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US20120247679A1 (en) * | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Plasma processing apparatus |
| TW201304615A (zh) * | 2011-03-29 | 2013-01-16 | Tokyo Electron Ltd | 電漿處理裝置及電漿處理方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW376547B (en) * | 1997-03-27 | 1999-12-11 | Matsushita Electric Industrial Co Ltd | Method and apparatus for plasma processing |
| KR20010112958A (ko) * | 2000-06-15 | 2001-12-24 | 황 철 주 | 고밀도 플라즈마 반응기 |
| US7098599B2 (en) * | 2000-12-27 | 2006-08-29 | Japan Science & Technology Corporation | Plasma generator |
| US6667577B2 (en) * | 2001-12-18 | 2003-12-23 | Applied Materials, Inc | Plasma reactor with spoke antenna having a VHF mode with the spokes in phase |
| JP2007149638A (ja) * | 2005-10-27 | 2007-06-14 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
| JP5231308B2 (ja) * | 2009-03-31 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5227245B2 (ja) | 2009-04-28 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5592098B2 (ja) | 2009-10-27 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| KR101757922B1 (ko) | 2009-10-27 | 2017-07-14 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
| JP2013182966A (ja) * | 2012-03-01 | 2013-09-12 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
| KR101328520B1 (ko) * | 2012-05-17 | 2013-11-20 | 한양대학교 산학협력단 | 플라즈마 장비 |
-
2014
- 2014-11-05 JP JP2014225230A patent/JP6623511B2/ja active Active
-
2015
- 2015-10-27 TW TW104135241A patent/TWI679672B/zh active
- 2015-10-27 TW TW108140484A patent/TW202013430A/zh unknown
- 2015-11-04 KR KR1020150154315A patent/KR101872076B1/ko active Active
- 2015-11-05 US US14/934,091 patent/US20160126065A1/en not_active Abandoned
-
2018
- 2018-06-21 KR KR1020180071244A patent/KR101998520B1/ko active Active
-
2019
- 2019-12-30 US US16/730,861 patent/US11443920B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040124779A1 (en) * | 2002-12-31 | 2004-07-01 | Howald Arthur M. | Plasma processor apparatus and method, and antenna |
| US20110094995A1 (en) * | 2009-10-27 | 2011-04-28 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US20110104902A1 (en) * | 2009-10-27 | 2011-05-05 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP2011119659A (ja) * | 2009-10-27 | 2011-06-16 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| US20120190207A1 (en) * | 2011-01-25 | 2012-07-26 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP2012156261A (ja) * | 2011-01-25 | 2012-08-16 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| TW201304615A (zh) * | 2011-03-29 | 2013-01-16 | Tokyo Electron Ltd | 電漿處理裝置及電漿處理方法 |
| US20120247679A1 (en) * | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US20200144026A1 (en) | 2020-05-07 |
| US20160126065A1 (en) | 2016-05-05 |
| KR101998520B1 (ko) | 2019-07-09 |
| TW201630030A (zh) | 2016-08-16 |
| JP2016091811A (ja) | 2016-05-23 |
| TW202013430A (zh) | 2020-04-01 |
| US11443920B2 (en) | 2022-09-13 |
| JP6623511B2 (ja) | 2019-12-25 |
| KR101872076B1 (ko) | 2018-06-27 |
| KR20160053812A (ko) | 2016-05-13 |
| KR20180074633A (ko) | 2018-07-03 |
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