TWI678413B - 多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法 - Google Patents

多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法 Download PDF

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Publication number
TWI678413B
TWI678413B TW105108414A TW105108414A TWI678413B TW I678413 B TWI678413 B TW I678413B TW 105108414 A TW105108414 A TW 105108414A TW 105108414 A TW105108414 A TW 105108414A TW I678413 B TWI678413 B TW I678413B
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TW
Taiwan
Prior art keywords
mass
etching
etching solution
acid
hydrogen peroxide
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TW105108414A
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English (en)
Chinese (zh)
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TW201710470A (zh
Inventor
着能真
Makoto CHAKUNO
鬼頭佑典
Yusuke Kito
淵上真一郎
Shinichirou FUCHIGAMI
小佐野善秀
Yoshihide Kosano
Original Assignee
日商松下知識產權經營股份有限公司
Panasonic Intellectual Property Management Co., Ltd.
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Publication of TW201710470A publication Critical patent/TW201710470A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
TW105108414A 2015-03-20 2016-03-18 多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法 TWI678413B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015058223A JP6516214B2 (ja) 2015-03-20 2015-03-20 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
JP2015-058223 2015-03-20

Publications (2)

Publication Number Publication Date
TW201710470A TW201710470A (zh) 2017-03-16
TWI678413B true TWI678413B (zh) 2019-12-01

Family

ID=56978120

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105108414A TWI678413B (zh) 2015-03-20 2016-03-18 多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法

Country Status (4)

Country Link
JP (1) JP6516214B2 (https=)
CN (1) CN106460197B (https=)
TW (1) TWI678413B (https=)
WO (1) WO2016152091A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516214B2 (ja) * 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
CN107151795A (zh) * 2017-06-02 2017-09-12 苏州晶瑞化学股份有限公司 一种铜钼合金膜用蚀刻液
JP6822985B2 (ja) 2018-01-05 2021-01-27 フタバ産業株式会社 消音装置
JP7595273B2 (ja) * 2020-09-24 2024-12-06 パナソニックＩｐマネジメント株式会社 エッチング液
JP7806697B2 (ja) 2020-09-29 2026-01-27 三菱瓦斯化学株式会社 半導体基板洗浄用組成物及び洗浄方法
JP7570529B2 (ja) * 2021-02-24 2024-10-21 株式会社Ｓｃｒｅｅｎホールディングス モリブデンをエッチングする方法
CN114014771B (zh) * 2021-06-30 2023-12-12 安徽华恒生物科技股份有限公司 一种超高纯度的氨基酸及其制备方法和其应用
CN114318340B (zh) * 2021-12-22 2023-09-29 惠州达诚微电子材料有限公司 一种蚀刻液组合物及其制备方法
WO2024038697A1 (ja) * 2022-08-19 2024-02-22 株式会社Adeka 組成物、エッチング方法、及び積層体の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102762770A (zh) * 2010-02-15 2012-10-31 三菱瓦斯化学株式会社 包含铜层及钼层的多层薄膜用蚀刻液

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JPS5286933A (en) * 1976-01-14 1977-07-20 Tokai Electro Chemical Co Method of treating surface of copper and copper alloy
KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
CN103717787B (zh) * 2011-07-26 2016-08-24 三菱瓦斯化学株式会社 铜/钼系多层薄膜用蚀刻液
JP2013091820A (ja) * 2011-10-24 2013-05-16 Kanto Chem Co Inc 銅層および／または銅合金層を含む金属膜用エッチング液組成物およびそれを用いたエッチング方法
KR101517013B1 (ko) * 2013-10-02 2015-05-04 주식회사 이엔에프테크놀로지 구리 및 몰리브덴 함유 막의 식각액 조성물
KR20150043569A (ko) * 2013-10-07 2015-04-23 주식회사 이엔에프테크놀로지 구리 및 몰리브덴 함유 막의 식각액 조성물
JP6128404B2 (ja) * 2013-11-25 2017-05-17 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN104498951B (zh) * 2014-12-11 2017-05-17 深圳新宙邦科技股份有限公司 一种双氧水系铜钼合金膜用蚀刻液
JP6516214B2 (ja) * 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102762770A (zh) * 2010-02-15 2012-10-31 三菱瓦斯化学株式会社 包含铜层及钼层的多层薄膜用蚀刻液

Also Published As

Publication number Publication date
JP2016176126A (ja) 2016-10-06
WO2016152091A1 (ja) 2016-09-29
JP6516214B2 (ja) 2019-05-22
TW201710470A (zh) 2017-03-16
CN106460197B (zh) 2019-02-22
CN106460197A (zh) 2017-02-22

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