TWI672352B - 半導體用之黏著膜及半導體裝置 - Google Patents

半導體用之黏著膜及半導體裝置 Download PDF

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TWI672352B
TWI672352B TW106140503A TW106140503A TWI672352B TW I672352 B TWI672352 B TW I672352B TW 106140503 A TW106140503 A TW 106140503A TW 106140503 A TW106140503 A TW 106140503A TW I672352 B TWI672352 B TW I672352B
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adhesive film
semiconductor
layer
adhesive
meth
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TW106140503A
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TW201825624A (zh
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金熹正
羅樓李
金榮國
李光珠
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南韓商Ｌｇ化學股份有限公司
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    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
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Abstract

提供半導體用之黏著膜，其包括：傳導層，其含有至少一種選自由下列所組成之群組的金屬：銅、鎳、鈷、鐵、不鏽鋼(SUS)、及鋁，且具有0.05 µm或更大之厚度；以及黏著層，其形成於該傳導層之至少一表面上且包括(甲基)丙烯酸酯系樹脂、固化劑、及環氧樹脂；以及提供包括上述黏著膜之半導體裝置。

Description

半導體用之黏著膜及半導體裝置
相關申請案交互參考 　　[0001] 本申請案主張2016年11月29日向韓國智慧財產局(Korean Intellectual Property Office)提出申請之韓國專利申請案10-2016-0160379的優先權及權益，該案整體內容係以引用方式併入本文中。 　　[0002] 本發明係關於半導體用之黏著膜，以及半導體裝置。
[0003] 近來，隨著電子裝置微型化、高性能及容量增大的趨勢漸增，對於高密度及高度集成之半導體封裝件的需求已迅速增加，因而半導體晶片的尺寸日益變大，以及在改善集成度方面，愈來愈常使用多級式堆疊晶片的堆疊封裝法。 　　[0004] 視多級半導體堆疊封裝之用途而定，晶片的厚度變較薄以及電路之集成度變較高。然而，晶片本身之模數降低，造成製程及最終產品的可靠度之問題。 　　[0005] 為了解決此等問題，已嘗試增強半導體封裝製程中所使用之黏著劑的物理性質。 　　[0006] 此外，近來，由於半導體晶片已變得較薄，存在晶片於現有的刀片裁切製程中受損因而降低產率的問題，為了克服此問題，建議先用刀片裁切半導體晶片然後將之拋光的製備方法。 　　[0007] 在此種製備方法中黏著劑未被裁切。因而，使用雷射裁切該黏著劑，然後在低溫下經由基底膜的擴展製程(expanding process)裁切。 　　[0008] 此外，近來，為了保護晶片上的電路，已應用經由低溫擴展製程及熱收縮製程來裁切黏著劑的方法而不使用雷射。 　　[0009] 然而，慣用黏著劑具有低延性(ductility)，因而在室溫下不容易裁切，以及在裁切後使之在室溫下靜置時，因低延性之故而發生再黏著，從而降低半導體晶片的生產率。 　　[0010] 另一方面，在近來半導體封裝朝更高密度及更高度集成之趨勢下，所產生的電磁波量亦增加。然而，存在此等電磁波經由電子設備的接合部分或連接部分洩漏而造成有害影響(諸如引起其他電性元件或電子組件故障，或使人體免疫功能減弱)的問題。 　　[0011] 因此，已對於能實現可有效屏蔽及吸收造成電性元件故障且對人體有負面影響的電磁波之特性，同時改善半導體封裝用之產品的裁切性質以及黏著性之方法進行各種研究。
技術問題 　　[0012] 本發明之一目的係提供半導體用之黏著膜，其可因固化產物的物理性質改善而改善半導體晶片之可靠度，以及可在無特殊限制的情況下應用於各種不同裁切方法以實現優異裁切性質，因而改善半導體封裝製程的可靠度及效率，且其可展現優異的電磁波吸收性能。 　　[0013] 本發明另一目的係提供包含上述半導體用之黏著膜的半導體裝置。 技術方案 　　[0014] 在本發明一實施態樣中，提供半導體用之黏著膜，其包含：傳導層，其含有至少一種選自由下列所組成之群組的金屬：銅、鎳、鈷、鐵、不鏽鋼(SUS)、及鋁，且具有0.05 µm或更大之厚度；以及，黏著層，其形成於該傳導層之至少一表面上且包含(甲基)丙烯酸酯系樹脂((meth)acrylate-based resin)、固化劑、及環氧樹脂。 　　[0015] 在本發明另一實施態樣中，提供包含上述半導體用之黏著膜以及與該黏著膜之黏著層的一表面接觸之半導體元件的半導體裝置。 　　[0016] 下文，將更詳細描述根據本發明之具體實施態樣的半導體用之黏著膜以及半導體元件。 　　[0017] 如上述，根據本發明一實施態樣，可提供半導體用之黏著膜，其包含：傳導層(conductive layer)，其含有至少一種選自由下列所組成之群組的金屬：銅、鎳、鈷、鐵、不鏽鋼(SUS)、及鋁，且具有0.05 µm或更大之厚度；以及，黏著層(adhesive layer)，其形成於該傳導層之至少一表面上且包含(甲基)丙烯酸酯系樹脂、固化劑、及環氧樹脂。 　　[0018] 本案發明人對於可用於接合或封裝半導體元件的組件進行廣泛研究，並經由大量實驗發現具有上述組成之黏著層的半導體用之黏著膜可因固化產物的物理性質改善而改善半導體晶片之可靠度，以及可在無特殊限制的情況下應用於各種不同裁切方法以實現優異裁切性質，因而改善半導體封裝製程的可靠度及效率，以及另外，該半導體用之黏著膜同時包含傳導層，因而確保優異的電磁波吸收性能。本發明已基於此發現而完成。 　　[0019] 尤其是，由於實施態樣之半導體用之黏著膜包含上述特定金屬以及厚度大於或等於預定數值的傳導層，其可有效屏蔽及吸收造成半導體封裝製程或最終生產的產品中之元件故障或對人體有負面影響的電磁波。 　　[0020] 更具體而言，含有至少一種選自由銅、鎳、鈷、鐵、不鏽鋼(SUS)、及鋁所組成之群組的金屬之傳導層必須具有0.05 µm或更大之厚度，以實質上可實現電磁波屏蔽效果。 　　[0021] 當傳導層具有小於0.05 µm之厚度時，可由該傳導層吸收之電磁波的總強度不顯著，該傳導層的電阻會大幅提高，從而降低電磁波反射效率。 　　[0022] 傳導層可具有0.05 µm或更大、0.05 µm至10 µm、或0.1 µm至5 µm之厚度。 　　[0023] 此外，視傳導層中所含之金屬的種類而定，該傳導層的較佳範圍可變化。 　　[0024] 例如，傳導層可包含0.1 µm至10 µm之銅層、0.1 µm至10 µm之不鏽鋼(SUS)層、0.1 µm至10 µm之鋁層、0.05 µm至10 µm之鎳層、0.05 µm至10 µm之鈷層、或0.05 µm至10 µm之鐵(Fe)層。 　　[0025] 同時，傳導層之較佳實例包含0.1 µm至5 µm之銅層、0.1 µm至5 µm之不鏽鋼(SUS)層、0.1 µm至5 µm之鋁層、0.05 µm至2 µm之鎳層、0.05 µm至2 µm之鈷層、或0.05 µm至2 µm之鐵(Fe)層。 　　[0026] 上述傳導層可藉由諸如將上述金屬氣相沉積在黏著層上或層合上述金屬薄膜之方法形成。 　　[0027] 並且，實施態樣之半導體用之黏著膜可進一步包含形成在傳導層與黏著層之間且具有0.001 µm至1 µm之厚度的障壁層(barrier layer)。 　　[0028] 障壁層可用以防止傳導層中之原子或離子擴散至黏著層中。 　　[0029] 障壁層可具有0.001 µm至1 µm、或0.005 µm至0.5 µm之厚度。 　　[0030] 由於障壁層具有上述厚度，故可能防止傳導層的金屬之離子化，同時防止傳導層之原子或離子擴散至黏著層中，從而進一步增強半導體封裝的可靠度。 　　[0031] 當障壁層之厚度太薄時，難以防止上述傳導層中所含的金屬之離子化(ionization)。 　　[0032] 此外，當障壁層之厚度太厚時，實施態樣的半導體用之整體黏著膜會變得非常厚。因此，難以應用於具有細微厚度的半導體封裝，或半導體封裝之可靠度會降低，以及生產成本會不必要地提高。 　　[0033] 具體而言，障壁層可包括一或多種選自由下列所組成之群組的過渡金屬：鈦(Ti)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)，不鏽鋼，鎳合金，及稀土金屬，或其氧化物、及其氮化物。較佳的，障壁層可包含上述組分中除不鏽鋼以外的組分、或其氧化物、及其氮化物。 　　[0034] 障壁層包含與傳導層中所含者不同的組分。例如，當傳導層包含不鏽鋼時，障壁層包含上述組分中除不鏽鋼以外的組分。 　　[0035] 由於障壁層包含如上所述的過渡金屬，故可能防止傳導層的金屬之離子化，同時防止傳導層之原子或離子擴散至黏著層中，從而如上述進一步提高可靠度。 　　[0036] 鎳合金意指含有鎳及一或多種選自由下列所組成之群組的元素之合金：碳、錳、矽、硫、鐵、銅、鉻、鋁、鈦、鉬及鈷。合金之具體種類係如同下表1中的那些。[0037] 另一方面，如上述，半導體用之黏著膜可因固化產物的物理性質改善而改善半導體晶片之可靠度，以及可在無特別限制的情況下應用於各種不同裁切方法以實現優異裁切性質，因而改善半導體封裝製程的可靠度及效率，此等效果顯為因上述黏著層所致。 　　[0038] 具體而言，黏著層可包含：包括含有環氧系官能基(epoxy-based functional group)之(甲基)丙烯酸酯系重複單元((meth)acrylate-based repeating unit)的(甲基)丙烯酸酯系樹脂、包括酚樹脂之固化劑、及環氧樹脂。 　　[0039] 由於該(甲基)丙烯酸酯系樹脂包括含有環氧系官能基之(甲基)丙烯酸酯系重複單元，所以該黏著層具有更均勻且剛性的內部結構，因而在超薄晶圓的多級堆疊期間可確保高耐衝擊性，且又可改善半導體製造後的電性質。 　　[0040] (甲基)丙烯酸酯系樹脂展現0.15 eq/kg或更低、或0.10 eq/kg或更低之羥基當量(hydroxyl equivalent weight)，因而能與環氧樹脂更平順以及均勻地固化，不會抑制與該樹脂組成物的其他組分(例如環氧樹脂或酚樹脂)之相容性。特別是，這使得能在樹脂組成物固化期間有更均勻且剛性的內部結構，以及展現改良之初始張力模數(initial tensile modulus)，從而實現高裁切性質，即使是在低溫下進行的擴展製程(expanding process)中。 　　[0041] 當(甲基)丙烯酸樹脂之羥基當量高時，例如，當其大於0.15 eq/kg時，與環氧樹脂、或酚樹脂等之相容性降低，且由上述樹脂組成物所製造的黏著膜之外觀性質及機械性質的一致性會變差。特別是，當黏著膜一開始係在室溫下伸長時，難以獲得高模數，以及會難以確保低溫擴展製程中之充分裁切性質。 　　[0042] (甲基)丙烯酸酯系樹脂可具有-10℃至20℃、或-5℃至15℃之玻璃轉化溫度。 　　[0043] 藉由使用具有上述玻璃轉化溫度的(甲基)丙烯酸酯系樹脂，黏著層可具有充分流動性(flowability)且最終生產的黏著膜可確保高黏著強度，以及使用該黏著層容易製造呈薄膜等形式的黏著膜。 　　[0044] 此外，(甲基)丙烯酸酯系樹脂可進一步包含含有芳族官能基之(甲基)丙烯酸酯系重複單元(BzMA)。 　　[0045] 如上述，黏著層可包含包括含有環氧系官能基(epoxy-based functional group)之(甲基)丙烯酸酯系重複單元及含有芳族官能基之(甲基)丙烯酸酯系重複單元(BzMA)的(甲基)丙烯酸酯系樹脂。 　　[0046] 由於(甲基)丙烯酸酯系樹脂包括含有芳族官能基之(甲基)丙烯酸酯系重複單元(BzMA)，該黏著層可確保其中所含的組分之間的較高相容性及黏著強度，以及具有高彈性。此外，可防止黏著劑因裁切晶圓時所產生的熱而軟化、以及在黏著劑一部分中產生毛邊(burr)的現象。 　　[0047] 此外，黏著層展現相對經改良的初始張力模數，從而實現高裁切性質，即使是在低溫下進行的擴展製程中。 　　[0048] 含有芳族官能基的(甲基)丙烯酸酯系官能基在(甲基)丙烯酸酯系樹脂中的含量可為2至40重量%、3至30重量%、或5至25重量%。 　　[0049] 若包含芳族官能基的(甲基)丙烯酸酯系官能基在(甲基)丙烯酸酯系樹脂中之含量太低，則提高與環氧樹脂或酚樹脂之相容性的效果會不顯著，以及降低最終生產的黏著膜之吸濕性質(hygroscopic property)的效果亦不顯著，從而使得難以獲得該實施態樣之組成物的預期效果。 　　[0050] 若包含芳族官能基的(甲基)丙烯酸酯系官能基在(甲基)丙烯酸酯系樹脂中的含量太高，則最終生產的黏著膜之黏著強度會降低。 　　[0051] 芳族官能基可為具有6至20個碳原子之芳基；或包含具有6至20個碳原子之芳基及具有1至10個碳原子之伸烷基的芳基伸烷基(arylalkylene group)。 　　[0052] 含有環氧系官能基之(甲基)丙烯酸酯系重複單元可包含具有3至20個環氧基碳原子(epoxy carbon atom)的環烷基甲基(甲基)丙烯酸酯重複單元。「具有3至20個環氧基碳原子的環烷基甲基」係指鍵結有環氧基之具有3至30個碳原子的環烷基係經甲基取代的結構。 　　[0053] 具有3至20個環氧基碳原子的環烷基甲基(甲基)丙烯酸酯之實例包括(甲基)丙烯酸環氧丙酯(glycidyl(meth)acrylate)及(甲基)丙烯酸3,4-環氧基環己基甲酯(3,4-epoxycyclohexylmethyl(meth)acrylate)。 　　[0054] 並且，(甲基)丙烯酸酯系樹脂可進一步包含至少一種選自由下列所組成之群組的重複單元：含有反應性官能基之乙烯基系重複單元及含有具有1至10個碳原子之烷基的(甲基)丙烯酸酯系官能基。 　　[0055] 反應性官能基可包含至少一選自由下列所組成之群組的官能基：醇、胺、羧酸、環氧化物、醯亞胺、(甲基)丙烯酸酯、腈、降莰烯、烯烴、聚乙二醇、硫醇、及乙烯基。 　　[0056] 當(甲基)丙烯酸酯系樹脂進一步包含至少一選自由含有反應性官能基之乙烯基系重複單元及含有具有1至10個碳原子之烷基的(甲基)丙烯酸酯系官能基所組成之群組的重複單元時，該(甲基)丙烯酸酯系樹脂可含有0.1至20重量%、或0.5至10重量%之含有環氧系官能基之(甲基)丙烯酸酯系重複單元。 　　[0057] 並且，在實施態樣之黏著層中，相對於(甲基)丙烯酸酯系樹脂、環氧樹脂以及酚樹脂之總重，(甲基)丙烯酸酯系樹脂的重量比可為0.55至0.95。 　　[0058] 由於黏著層包含在上述範圍內之(甲基)丙烯酸酯系樹脂(相對於(甲基)丙烯酸酯系樹脂、環氧樹脂及酚樹脂之總重)，該黏著層展現低伸長率(elongation)同時在初始伸長時展現相對高模數，因而可實現在低溫擴展製程中之高裁切性質，同時實現高彈性、優異機械性質以及高黏著強度。 　　[0059] 若相對於(甲基)丙烯酸酯系樹脂、環氧樹脂以及酚樹脂之總重的(甲基)丙烯酸酯系樹脂之重量比係低於上述範圍，則該黏著層之黏著性質降低，因而晶圓的可濕性(wettability)降低，此使得無法預期有均勻的裁切性質，以及從可靠度觀點來看，晶圓與黏著膜界面之間的黏著性降低，此導致黏著強度降低且使可靠度變弱。 　　[0060] 若相對於(甲基)丙烯酸酯系樹脂、環氧樹脂以及酚樹脂之總重的(甲基)丙烯酸酯系樹脂之重量比係高於上述範圍，則該黏著層在室溫下伸長5 %至15 %時所產生的模數可能不足以及可能變得太高，以及該黏著層在室溫下之伸長率會大幅提高然而裁切性質變低，從而大幅抑制可加工性(workability)。 　　[0061] 黏著層中之環氧樹脂與酚樹脂的重量比可考慮最終生產的產品之性質而做調整，例如，重量比可為10:1至1:10。 　　[0062] 並且，黏著層中所含之固化劑可包含酚樹脂，更具體而言，可包含軟化點為100℃或更高之酚樹脂。 　　[0063] 酚樹脂可具有100℃或更高、110℃至160℃、或115℃至150℃之軟化點。 　　[0064] 上述實施態樣之黏著層可包含具有相對高軟化點的酚樹脂，且如上述具有100℃或更高、110℃至160℃、或115℃至150℃之軟化點的酚樹脂可與液態環氧樹脂及具有-10℃至30℃之玻璃轉化溫度的熱塑性樹脂一起形成黏著組分之基底(或基質)，以及能使由該黏著層所製造的黏著膜在室溫下具有較高張力模數及優異黏著強度且具有針對半導體而最佳化之流動性質。 　　[0065] 反之，若酚樹脂之軟化點低於上述範圍，則由該黏著層所製造的黏著膜之張力模數會降低或在室溫下之伸長率會明顯提高，以及黏著膜之熔體黏度(melt viscosity)會降低或模數會降低，因而會因為在切晶製程(dicing process)中所產生的熱而產生更多毛邊或裁切性質或拾取效率(pickup efficiency)會降低。 　　[0066] 此外，在接合黏著膜之製程中或當黏著膜長時間曝露於高溫條件時，會產生大量滲出(bleed-out)。 　　[0067] 此外，酚樹脂可具有80 g/eq至400 g/eq之羥基當量、90 g/eq至250 g/eq之羥基當量、100 g/eq至178 g/eq之羥基當量、或210 g/eq至240 g/eq之羥基當量。 　　[0068] 由於酚樹脂具有上述羥基當量範圍，即使固化時間短，固化程度亦會提高，從而使黏著層可提供在室溫下之較高張力模數及優異黏著強度。 　　[0069] 酚樹脂可包含選自由雙酚A酚醛清漆樹脂(bisphenol A novolac resin)及聯苯酚醛清漆樹脂(biphenyl novolac resin)所組成之群組中的至少一者。 　　[0070] 並且，環氧樹脂可用以調整黏著層之固化程度或提高黏著性能等。 　　[0071] 環氧樹脂之具體實例包括選自由下列所組成之群組的至少一聚合物樹脂：聯苯系環氧樹脂(biphenyl-based epoxy resin)、雙酚A環氧樹脂(bisphenol A epoxy resin)、雙酚F環氧樹脂(bisphenol F epoxy resin)、甲酚酚醛清漆環氧樹脂(cresol novolac epoxy resin)、酚系酚醛清漆環氧樹脂(phenol novolac epoxy resin)、四官能性環氧樹脂(tetrafunctional epoxy resin)、三苯甲烷型環氧樹脂(triphenylmethane type of epoxy resin)、經烷基改質之三苯甲烷型環氧樹脂(alkyl modified triphenylmethane type of epoxy resin)、萘型環氧樹脂(naphthalene type of epoxy resin)、二環戊二烯型環氧樹脂(dicyclopentadiene type of epoxy resin)、及經二環戊二烯改質之酚型環氧樹脂(dicyclopentadiene modified phenol type of epoxy resin)。 　　[0072] 環氧樹脂之軟化點(softening point)可為50℃至120℃。 　　[0073] 若環氧樹脂之軟化點太低，則黏著層之黏著強度會提高，因而會降低切晶(dicing)後之晶片的拾取性質(pickup property)。若環氧樹脂之軟化點太高，則黏著層的流動性(flowability)會降低，且黏著層的黏著強度會降低。 　　[0074] 環氧樹脂可具有100至300 g/eq之環氧化物當量(epoxy equivalent weight)。 　　[0075] 固化劑可進一步包含至少一選自由胺系固化劑(amine-based curing agent)及酸酐系固化劑(acid anhydride-based curing agent)所組成之群組中的化合物。 　　[0076] 所使用之固化劑的量可考慮最終生產的黏著膜之物理性質等而適當地選擇，例如可使用以100重量份之環氧樹脂計為10至700重量份、或30至300重量份之量。 　　[0077] 黏著層可進一步包含固化觸媒。 　　[0078] 固化觸媒係用以促進固化劑之作用或黏著層的固化，且可使用已知用於製造半導體用之黏著膜等的任何固化觸媒而無特別限制。 　　[0079] 例如，作為固化觸媒，可使用選自由下列所組成之群組中的一或多種：磷化合物、硼化合物、磷-硼化合物(phosphorous-boron compound)及咪唑系化合物。所使用之固化觸媒的量可考慮最終生產的黏著膜之物理性質等而適當地選擇，例如，其用量以100重量份之液態及固態環氧樹脂、(甲基)丙烯酸酯系樹脂及酚樹脂計為0.5至10重量份。 　　[0080] 黏著層可進一步包含離子清除劑(ion scavenger)，其包括：包含一或多種選自由鋯、銻、鉍、鎂及鋁所組成之群組的金屬之金屬氧化物；多孔矽酸鹽(porous silicate)；多孔鋁矽酸鹽(porous aluminosilicate)；或沸石。 　　[0081] 包含一或多種選自由鋯、銻、鉍、鎂及鋁所組成之群組的金屬之金屬氧化物的實例可包括氧化鋯、氧化銻、氧化鉍、氧化鎂、氧化鋁、以銻鉍為底質之氧化物、以鋯鉍為底質之氧化物、以鋯鎂為底質之氧化物、以鎂鋁為底質之氧化物、以銻鎂為底質之氧化物、以銻鋁為底質之氧化物、以銻鋯為底質之氧化物、以鋯鋁為底質之氧化物、以鉍鎂為底質之氧化物、以鉍鋁為底質之氧化物、或其二或更多種的混合物。 　　[0082] 離子清除劑可用以吸附存在於黏著層或由彼所製造之黏著膜內部的金屬離子或鹵素離子，因而可改善與該黏著膜接觸之接線的電性可靠度(electrical reliability)。 　　[0083] 黏著層中之離子清除劑的含量無特別限制，但考慮與過渡金屬離子之反應性、可加工性、及由該樹脂組成物所製造之黏著膜的物理性質，其所含之量，以半導體用之黏著劑組成物的總固體重量計，可為0.01至20重量%，較佳為0.01至10重量%。 　　[0084] 黏著層可進一步包含10重量%至90重量%之有機溶劑。有機溶劑的含量可考慮黏著層之物理性質、最終生產的黏著膜之物理性質、及製程來決定。 　　[0085] 黏著層可進一步包含一或多種選自由偶合劑及無機填料所組成之群組的添加劑。偶合劑及無機填料之具體實例無特別限制，且可使用已知可用於半導體封裝用之黏著劑的組分而無明顯限制。 　　[0086] 並且，當在室溫下以0.3 mm/s之速度伸長至多達5 %時，黏著層可具有100 MPa或更大之模數。 　　[0087] 此外，黏著層可具有在室溫下以0.3 mm/s之速度伸長至10 %時所產生為55 MPa或更大的模數，以及可具有在15 %伸長率時所產生為40 MPa或更大的模數。 　　[0088] 此外，黏著層於室溫下之伸長率可為300 %或更低。 　　[0089] 黏著層展現低伸長率同時在初始伸長期間展現相對高彈性，以及可實現在低溫擴展製程中之高裁切性質，同時實現高彈性、優異機械性質及高黏著強度。 　　[0090] 此外，將黏著層應用至具有半導體晶片之多層結構的封裝以實現更安定結構、機械性質(諸如優異耐熱性及耐衝擊性)，還能防止回流裂痕(reflow crack)等等。特別是，即使當長時間曝露於半導體製程中所應用的高溫條件下時，實質上不會產生空隙。 　　[0091] 此外，黏著層具有高斷裂強度(breaking strength)及低斷裂伸長率(elongation at break)，因而可應用於非接觸型黏著劑裁切(non-contact-type adhesive cutting)(例如DBG(先切割後研磨(dicing before grinding)))、以及使用刀片之晶圓裁切，且即使在低溫下亦具有優異裁切性質，因而即使在裁切之後使之在室溫下靜置，再黏著(re-adhesion)的可能性變低，因而提高半導體製程中之可靠度及效率。 　　[0092] 黏著膜可用作為晶粒附接膜(die attach film)(DAF)用於將引線框或基板與晶粒附接或將晶粒與晶粒附接。 　　[0093] 因而，黏著膜可加工成晶粒黏合膜(die bonding film)、或切晶黏合膜(dicing die bonding film)等形式。 　　[0094] 並且，在半導體用之黏著膜中，黏著膜可具有0.1 µm至300 µm之厚度。 　　[0095] 另外，傳導層之厚度相對於黏著層可為0.001至0.8，或0.002至0.5。 　　[0096] 由於傳導層之厚度相對於半導體用之黏著膜係在0.001至0.8、或0.002至0.5之範圍，該黏著膜可獲致高黏著強度甚至同時確保安定的電磁波屏蔽效率。 　　[0097] 傳導層及黏著層各者的厚度可為一層的厚度、一或多個傳導層的總厚度、或一或多個黏著層的總厚度。 　　[0098] 半導體用之黏著膜可包含至少一各傳導層及黏著層。 　　[0099] 例如，半導體用之黏著膜可具有兩個黏著層形成於傳導層兩表面上的結構，以及該傳導層及該黏著層可依序層合。 　　[0100] 並且，根據本發明另一實施態樣，可提供包含半導體用之黏著膜、以及與該黏著膜之黏著層的一表面接觸之半導體元件的半導體裝置。 　　[0101] 如上所述，該半導體用之黏著膜可因改善固化產物的物理性質而改善半導體晶片之可靠度，以及可應用於各種裁切方法而無特殊限制，以實現優異裁切性質，因而改善半導體封裝製程的可靠度及效率，及另外，該半導體用之黏著膜同時包含傳導層，因而展現優異的電磁波吸收性能。 　　[0102] 位於黏著膜最外表面之黏著層可接合至半導體元件的一表面。 　　[0103] 此外，位於該黏著膜之另一最外表面的另一黏著層可接合至黏附體(諸如基板)。 　　[0104] 黏附體(adherend)的具體實例並無限制，例如，黏附體可為電路板或引線框。 　　[0105] 具體而言，作為電路板，可使用習知基板，諸如印刷線路板。 　　[0106] 另外，作為引線框(lead frame)，可使用有機基板包括金屬引線框(諸如Cu引線框及42合金引線框)、或玻璃環氧樹脂(glass epoxy)、BT(雙順丁烯二醯亞胺-三(bismaleimide-triazine))、或聚醯亞胺等等。 　　[0107] 如上所述，半導體用之黏著膜可包括選自傳導層及黏著層之至少一者。 　　[0108] 例如，半導體用之黏著膜可具有兩個黏著層係形成於傳導層兩表面上的結構，或其可具有傳導層及黏著層依序層合的結構。 　　[0109] 此外，半導體裝置可包含一或更多的半導體用之黏著膜及半導體元件。 　　[0110] 例如，半導體裝置可具有一或更多的半導體用之黏著膜及半導體元件係分別依序層合的結構。 　　[0111] 更具體而言，半導體裝置可進一步包含用以透過線接合(wire bonding)或覆晶法(flip-chip method)而與半導體元件接合之黏附體(adherend)。半導體用之黏著膜可形成於黏附體與半導體元件之間，或該黏著膜可形成於與該半導體元件和該黏附體所接合的表面相對之表面上。 　　[0112] 此外，半導體裝置可包含二或更多半導體元件，及該二或更多半導體元件中之至少二者可經由半導體用之黏著膜接合。 　　[0113] 此實施態樣之半導體裝置的實例顯示於圖1至3。 　　[0114] 然而，上述實施態樣之半導體裝置的細節不侷限於此。 　　[0115] 例如，如圖1所示，半導體裝置係建構成使電路圖案116形成於封裝基板110上，信號墊(signal pad) 112及接地點(ground contact)114可配置於其上，該信號墊或接地點可經由接合墊122及導線125接合至半導體元件120，以及上述半導體用之黏著膜可形成於該半導體元件與該電路圖案或封裝基板之間。 　　[0116] 半導體元件可埋在模製構件130中。 　　[0117] 此外，如圖2所示，半導體裝置可具有如下的結構：第一半導體元件201及第二半導體元件202係層合在封裝基板200上，該第一半導體元件及該第二半導體元件係經由導線204連接至接地點部件203，以及第一半導體用之黏著膜210及第二半導體用之黏著膜220可個別形成於該封裝基板與該第一半導體元件之間、及在該第一半導體元件與該第二半導體元件之間。 　　[0118] 該第一半導體元件、該第二半導體元件及該導線可埋於模製構件205中。 　　[0119] 另外，如圖3所示，第一半導體元件301可透過線接合或覆晶法接合於封裝基板300上，以及FOW(線上之膜(film over wire))308可形成於該第一半導體元件上。 　　[0120] 第二半導體元件302、第三半導體元件303、第四半導體元件304、第五半導體元件305依序層合於FOW上，以及第一半導體用之黏著膜310、第二半導體用之黏著膜320、及第三半導體用之黏著膜330可個別形成於該第二半導體元件302、該第三半導體元件303、該第四半導體元件304、及該第五半導體元件305之間。 　　[0121] 該第二半導體元件302、該第三半導體元件303、該第四半導體元件304、及該第五半導體元件305可經由導線307個別或同時連接至接地點部件306。此等均亦可埋於模製構件中。 有利功效 　　[0122] 根據本發明，可提供半導體用之黏著膜，其可因固化產物的物理性質改善而改善半導體晶片之可靠度，且可在無特殊限制的情況下應用於各種不同裁切方法以實現優異裁切性質，因而改善半導體封裝製程的可靠度及效率，且其可展現優異的電磁波吸收性能；以及提供包含上述半導體用之黏著膜的半導體裝置。
[0124] 藉由以下實施例更詳細說明本發明之具體實施態樣。然而，該等實施例僅提出以說明本發明的具體實施態樣，本發明之範圍不侷限於此。 實施例1至5：製造半導體用之黏著層及黏著膜 實施例1 (1)製造黏著層之溶液 　　[0125] 在甲基乙基酮溶劑中混合57 g酚樹脂KH-6021(由DIC Corp.製造，雙酚A酚醛清漆樹脂，羥基當量：121 g/eq，軟化點：125℃)(為環氧樹脂之固化劑)、85 g之環氧樹脂EOCN-104S (由Nippon Kayaku Co., Ltd.製造，甲酚酚醛清漆型環氧樹脂，環氧化物當量：214 g/eq，軟化點：83℃)、425 g之丙烯酸酯樹脂(KG-3015P)、61.7 g之R972、0.96 g之DICY、及0.11 g之2MAOK，以獲得黏著層之溶液(固體含量：20重量%濃度)。 (2)製造半導體用之黏著膜 　　[0126] 將前文製造的黏著層之溶液塗至經脫離處理(release-treated)的聚對酞酸乙二酯膜(厚度38 µm)上，然後在110℃下乾燥3分鐘以獲得厚度為約9 µm之黏著膜。 　　[0127] 然後將該黏著膜層合在約2 µm厚之銅箔的兩表面上，以製造厚度為約20 µm的半導體用之黏著膜。 實施例2 　　[0128] 以與實施例1中之相同方式獲得黏著層之溶液(固體含量：20重量%濃度)，惟使用KG-3082代替KG-3015P作為丙烯酸酯樹脂。藉由使用所得的溶液，以與實施例1中之相同方式將該黏著膜層合在約2 µm厚之銅箔的兩表面上，以製造厚度為約20 µm的半導體用之黏著膜。 實施例3 　　[0129] 藉由濺鍍法將約0.05 µm厚之鈮(Nb) 氧化物層形成於約2 µm厚之銅箔的一表面上。 　　[0130] 然後，將實施例1中所獲得之具有約9 µm厚度的黏著膜層合在該鈮(Nb)氧化物層上。 　　[0131] 相似地，藉由濺鍍法將約0.05 µm厚之鈮(Nb)氧化物層形成於約2 µm厚之銅箔的另一表面上，以及層合具有厚度約9 µm之黏著膜。 比較例1 　　[0132] 將實施例1中所製造的黏著層之溶液塗至經脫離處理的聚對酞酸乙二酯膜(厚度：38 µm)上，然後在110℃下乾燥3分鐘以獲得具有20 µm厚度之黏著膜。 比較例2 　　[0133] 將0.04 µm厚之銅層形成於實施例1中所獲得的具有約9 µm厚度之黏著膜上，以及再次將具有約9 µm厚度的黏著膜層合在該銅層上以製造具有約18.4 µm厚度的半導體用之黏著膜。＜填料＞ 　　[0134] R 972：Evonik Industries，燻製二氧化矽(fumed silica)，平均粒度17 nm ＜丙烯酸酯樹脂＞ 　　[0135] KG-3015P：以丙烯酸丁酯：丙烯酸乙酯：丙烯腈：甲基丙烯酸甲酯：甲基丙烯酸環氧丙酯之組成比 = 41:24:30:2:3合成的丙烯酸系樹脂(重量平均分子量：約900,000，玻璃轉化溫度：17℃) 　　[0136] KG-3082：以丙烯酸丁酯：丙烯腈：甲基丙烯酸環氧丙酯：甲基丙烯酸苄酯之組成比 = 46:20:6:28合成的丙烯酸系樹脂(重量平均分子量：約660,000，玻璃轉化溫度：14℃，羥基當量：約0.05 eq/kg) ＜添加劑＞ 　　[0137] DICY：二氰二胺(Dicyandiamide) 　　2 MAOK：咪唑系硬化加速劑(Imidazole-based hardening accelerator) 　　3 [實驗實例：評估半導體用之黏著膜的電磁波屏蔽效果] (1)製造半導體裝置 　　[0138] 在溫度為70℃之條件下，將分別在實施例及比較例中所獲得的半導體用之黏著膜附接至具有一側為10 mm且厚度為80 µm之四角形的第一半導體元件。在溫度為125℃、壓力為1 kg以及時間為1秒的條件下，將附接有黏著膜的第一半導體元件附接至BGA基板。 　　[0139] 然後，使用乾燥機在125℃下將接合有第一半導體元件的BGA基板熱處理1小時以熱固化該黏著膜。 　　[0140] 隨後，使用線接合機(製造商：ShinKawa，商品名：UTC-1000)，在下列條件下於150℃下，在該第一半導體元件上以線徑(wire diameter)23 µm且間距(pitch)為100 µm進行線接合。 (2)評估電磁波屏蔽效果 　　[0141] 透過信號源(signal source)將電力供應至前文製造的半導體裝置，將近場天線(near field antenna)置於半導體裝置上，然後使用頻譜分析儀於為約1 MHz至8 GHz之頻率範圍以2D掃描測量得自該天線的電磁波之強度(dBm)。 　　[0142] 測量結果係示於下表3。[0143] 實施例之黏著膜在初始伸長時展現高模數，但隨著伸長率提高，模數相對降低。由於該黏著膜在室溫具有低伸長率，其可在低溫擴展製程中獲致高裁切性質。亦確認可實現優異的電磁波吸收性能，如上表3所示。 　　[0144] 特別是，在實施例2之黏著膜的情況下，由於其在初始伸長時具有較高模數且在室溫下具有較低伸長率(相較於實施例1)，因而在低溫擴展製程中可實現改良的裁切性質。 　　[0145] 更具體而言，如上表3所示，確認實施例1至3之半導體用之黏著膜係建構成使2 µm厚之銅層位於黏著層之間，因此相較於比較例，其於1 MHz至8 GHz之頻帶的電磁波屏蔽性能(electromagnetic wave shielding performance)改善約6至14 dBm。 　　[0146] 反之，確認比較例2的具有0.04 µm厚之銅層係位於黏著層之間的結構之半導體用之黏著膜，於1 MHz至8 GHz之頻帶的電磁波屏蔽性能，與比較例相較，並無明顯差異。因此，可看出為了改善電磁波屏蔽性能，需要厚度不小於預定值的傳導層。 　　[0147] 因此，確認實施例1至3之半導體用之黏著膜可實現能有效屏蔽及吸收造成電性元件故障及對人體有負面影響的電磁波之特性。 (3)評估離子遷移 　　[0148] 將實施例1及3的半導體用之黏著膜層合在以間隔為75 µm提供的兩個銅電極上，然後以此狀態在125℃下熱處理1小時以熱固化該黏著膜。 　　[0149] 隨後，在85℃及85 RH%之條件下對該銅電極施加5.5 V之電壓，並測量直到電阻值在等於數分鐘之短時間內突然降低(發生短路)所需的時間。 　　[0150] 時間測量的結果，確認實施例1的半導體用之黏著膜花費190小時發生短路，以及實施例3的半導體用之黏著膜花費220小時發生短路。因而，確認在實施例之黏著膜的情況下，因黏著層的特性之故，傳導層之原子或離子較難以擴散至黏著層中。特別是，實施例2的半導體用之黏著膜因存在形成於銅箔層兩表面上之鈮氧化物層之故而可防止原子或離子擴散至黏著層中，且可改善傳導層的金屬之離子化。
[0151]
110‧‧‧封裝基板
112‧‧‧信號墊
114‧‧‧接地點
116‧‧‧電路圖案
120‧‧‧半導體元件
122‧‧‧接合墊
125‧‧‧導線
130‧‧‧模製構件
140‧‧‧半導體用之黏著膜
200‧‧‧封裝基板
201‧‧‧第一半導體元件
202‧‧‧第二半導體元件
203‧‧‧接地點部件
204‧‧‧導線
205‧‧‧模製構件
210‧‧‧第一半導體用之黏著膜
220‧‧‧第二半導體用之黏著膜
300‧‧‧封裝基板
301‧‧‧第一半導體元件
302‧‧‧第二半導體元件
303‧‧‧第三半導體元件
304‧‧‧第四半導體元件
305‧‧‧第五半導體元件
306‧‧‧接地點部件
307‧‧‧導線
308‧‧‧FOW(線上之膜)
310‧‧‧第一半導體用之黏著膜
320‧‧‧第二半導體用之黏著膜
330‧‧‧第三半導體用之黏著膜
[0123] 　　圖1顯示根據本發明一實施態樣的包含半導體用之黏著膜的半導體裝置之一實例。 　　圖2顯示根據本發明一實施態樣的包含半導體用之黏著膜的半導體裝置之另一實例。 　　圖3顯示根據本發明一實施態樣的包含半導體用之黏著膜的半導體裝置之又一實例。

Claims (15)

  1. 一種半導體用之黏著膜，其包含：傳導層，其含有至少一種選自由下列所組成之群組的金屬：銅、鎳、鈷、鐵、不鏽鋼(SUS)、及鋁，且具有0.05μm或更大之厚度；以及黏著層，其形成於該傳導層之至少一表面上且包含(甲基)丙烯酸酯系樹脂、固化劑、及環氧樹脂，其中，該黏著層包含包括含有環氧系官能基之(甲基)丙烯酸酯系重複單元及含有芳族官能基之(甲基)丙烯酸酯系重複單元的(甲基)丙烯酸酯系樹脂、包括酚樹脂之固化劑、及環氧樹脂。
  2. 如申請專利範圍第1項之半導體用之黏著膜，其中，該傳導層具有0.05μm至10μm之厚度。
  3. 如申請專利範圍第1項之半導體用之黏著膜，其中，該傳導層為0.1μm至10μm之銅層、0.1μm至10μm之鋼(SUS)層、0.1μm至10μm之鋁層、0.05μm至10μm之鎳層、0.05μm至10μm之鈷層、或0.05μm至10μm之鐵(Fe)層。
  4. 如申請專利範圍第1項之半導體用之黏著膜，其進一步包含形成在該傳導層與該黏著層之間且具有0.001μm至1μm之厚度的障壁層。
  5. 如申請專利範圍第4項之半導體用之黏著膜，其中，該障壁層包括一或多種選自由下列所組成之群組的過渡金屬：鈦(Ti)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉭(Ta)，不鏽鋼，鎳合金，及稀土金屬，或其氧化物、及其氮化物。
  6. 如申請專利範圍第1項之半導體用之黏著膜，其中，該(甲基)丙烯酸酯系樹脂具有0.15eq/kg或更低之羥基當量。
  7. 如申請專利範圍第1項之半導體用之黏著膜，其中，該(甲基)丙烯酸酯系樹脂包括2至40重量%之含有芳族官能基的(甲基)丙烯酸酯系重複單元。
  8. 如申請專利範圍第1項之半導體用之黏著膜，其中，相對於該(甲基)丙烯酸酯系樹脂、該環氧樹脂及該酚樹脂之總重，該(甲基)丙烯酸酯系樹脂的重量比為0.55至0.95。
  9. 如申請專利範圍第1項之半導體用之黏著膜，其中，該酚樹脂具有100℃或更高之軟化點。
  10. 如申請專利範圍第1項之半導體用之黏著膜，其中，該環氧樹脂之軟化點為50℃至120℃。
  11. 如申請專利範圍第1項之半導體用之黏著膜，其中，該黏著膜具有0.1μm至300μm之厚度，以及該傳導層之厚度相對於該黏著層為0.001至0.8。
  12. 一種半導體裝置，其包含如申請專利範圍第1項之半導體用之黏著膜、以及與該黏著膜之黏著層的一表面接觸之半導體元件。
  13. 如申請專利範圍第12項之半導體裝置，其中，該半導體裝置進一步包含用以透過線接合(wire bonding)或覆晶法(flip-chip method)而與半導體元件接合之黏附體(adherend)。
  14. 如申請專利範圍第13項之半導體裝置，其中，該半導體用之黏著膜係形成於該黏附體與該半導體元件之間，或該半導體用之黏著膜係形成於與該半導體元件及該黏附體所接合的表面相對的表面上。
  15. 如申請專利範圍第12項之半導體裝置，其中，該半導體裝置包含二或更多半導體元件，以及該二或更多半導體元件之至少二者係經由該半導體用之黏著膜接合。
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