TWI664303B - 沈積系統、沈積設備、及操作一沈積系統之方法 - Google Patents
沈積系統、沈積設備、及操作一沈積系統之方法 Download PDFInfo
- Publication number
- TWI664303B TWI664303B TW107108724A TW107108724A TWI664303B TW I664303 B TWI664303 B TW I664303B TW 107108724 A TW107108724 A TW 107108724A TW 107108724 A TW107108724 A TW 107108724A TW I664303 B TWI664303 B TW I664303B
- Authority
- TW
- Taiwan
- Prior art keywords
- deposition
- steam source
- steam
- mask
- patent application
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 198
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000001816 cooling Methods 0.000 claims abstract description 57
- 238000012545 processing Methods 0.000 claims description 24
- 238000009826 distribution Methods 0.000 claims description 21
- 230000033001 locomotion Effects 0.000 claims description 18
- 230000000873 masking effect Effects 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 abstract description 171
- 238000007493 shaping process Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000005507 spraying Methods 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??PCT/EP2017/056381 | 2017-03-17 | ||
| EP2017056381 | 2017-03-17 | ||
| PCT/EP2017/058829 WO2018166637A1 (en) | 2017-03-17 | 2017-04-12 | Deposition system, deposition apparatus, and method of operating a deposition system |
| ??PCT/EP2017/058829 | 2017-04-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201900908A TW201900908A (zh) | 2019-01-01 |
| TWI664303B true TWI664303B (zh) | 2019-07-01 |
Family
ID=58537018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107108724A TWI664303B (zh) | 2017-03-17 | 2018-03-14 | 沈積系統、沈積設備、及操作一沈積系統之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20200224305A1 (ko) |
| JP (1) | JP6549314B2 (ko) |
| KR (1) | KR102158652B1 (ko) |
| CN (1) | CN108966659B (ko) |
| TW (1) | TWI664303B (ko) |
| WO (1) | WO2018166637A1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109652773B (zh) * | 2019-02-25 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种防着组件以及蒸镀设备 |
| WO2021052595A1 (en) * | 2019-09-19 | 2021-03-25 | Applied Materials, Inc. | Method of operating an evaporation source, evaporation system, and shield handling apparatus |
| WO2021052592A1 (en) * | 2019-09-19 | 2021-03-25 | Applied Materials, Inc. | Method of operating an evaporation source, evaporation system, and shield handling apparatus |
| JP7439253B2 (ja) * | 2019-10-28 | 2024-02-27 | アプライド マテリアルズ インコーポレイテッド | アイドルシールド、堆積装置、堆積システム、ならびに組み立てる方法および動作させる方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201604302A (zh) * | 2014-03-21 | 2016-02-01 | 應用材料股份有限公司 | 蒸發源陣列 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080006523A1 (en) * | 2006-06-26 | 2008-01-10 | Akihiro Hosokawa | Cooled pvd shield |
| CN201214679Y (zh) * | 2006-06-26 | 2009-04-01 | 应用材料股份有限公司 | 一种物理气相沉积装置以及与其相关的防护套件 |
| JP2008223102A (ja) * | 2007-03-14 | 2008-09-25 | Seiko Epson Corp | 蒸着装置、および蒸着方法 |
| JP2014132101A (ja) * | 2011-04-11 | 2014-07-17 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
| WO2015086049A1 (en) * | 2013-12-10 | 2015-06-18 | Applied Materials, Inc. | Evaporation source for organic material, apparatus having an evaporation source for organic material, system having an evaporation deposition apparatus with an evaporation source for organic materials, and method for operating an evaporation source for organic material |
-
2017
- 2017-04-12 KR KR1020187008246A patent/KR102158652B1/ko active IP Right Grant
- 2017-04-12 JP JP2018512124A patent/JP6549314B2/ja active Active
- 2017-04-12 CN CN201780007161.5A patent/CN108966659B/zh active Active
- 2017-04-12 US US15/754,920 patent/US20200224305A1/en not_active Abandoned
- 2017-04-12 WO PCT/EP2017/058829 patent/WO2018166637A1/en active Application Filing
-
2018
- 2018-03-14 TW TW107108724A patent/TWI664303B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201604302A (zh) * | 2014-03-21 | 2016-02-01 | 應用材料股份有限公司 | 蒸發源陣列 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019512043A (ja) | 2019-05-09 |
| WO2018166637A1 (en) | 2018-09-20 |
| US20200224305A1 (en) | 2020-07-16 |
| JP6549314B2 (ja) | 2019-07-24 |
| TW201900908A (zh) | 2019-01-01 |
| CN108966659A (zh) | 2018-12-07 |
| KR20180115665A (ko) | 2018-10-23 |
| CN108966659B (zh) | 2021-01-15 |
| KR102158652B1 (ko) | 2020-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI664303B (zh) | 沈積系統、沈積設備、及操作一沈積系統之方法 | |
| JP6815390B2 (ja) | 堆積装置を操作する方法、蒸発した源材料を基板に堆積する方法、及び堆積装置 | |
| JP6633185B2 (ja) | 材料堆積装置、真空堆積システム及びそのための方法 | |
| TWI638899B (zh) | 用於沈積一已蒸發源材料之蒸發源與用於其之遮蔽裝置、及用以沈積一已蒸發源材料之方法 | |
| TWI690611B (zh) | 真空沉積腔室 | |
| JP6594986B2 (ja) | 真空堆積のための材料源アレンジメント及び材料分配アレンジメント | |
| JP2019534938A (ja) | 材料堆積装置、真空堆積システム、及び真空堆積を行う方法 | |
| JP6488397B2 (ja) | 真空堆積のための材料源アレンジメント及びノズル | |
| JP7439253B2 (ja) | アイドルシールド、堆積装置、堆積システム、ならびに組み立てる方法および動作させる方法 | |
| JP2020023750A (ja) | 堆積装置を操作する方法、蒸発した源材料を基板に堆積する方法、及び堆積装置 | |
| CN211814626U (zh) | 用于防护罩的瓦、防护罩和沉积设备 | |
| TW202025535A (zh) | 用以在一真空腔室中沈積材料於一基板上之材料沈積設備、真空處理系統及用以處理一垂直定向之大面積基板的方法 | |
| TW201828368A (zh) | 用於一基板上之一材料之沉積的設備、用以沉積一或多層於一基板上之系統、及用以監視一真空沉積系統之方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |