TWI663690B - 堆疊式封裝裝置與其形成方法 - Google Patents

堆疊式封裝裝置與其形成方法 Download PDF

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TWI663690B
TWI663690B TW103145038A TW103145038A TWI663690B TW I663690 B TWI663690 B TW I663690B TW 103145038 A TW103145038 A TW 103145038A TW 103145038 A TW103145038 A TW 103145038A TW I663690 B TWI663690 B TW I663690B
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fan
out structure
package
molding compound
chip
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TW103145038A
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TW201535596A (zh
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余振華
余國寵
李明機
李建勳
吳俊毅
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台灣積體電路製造股份有限公司
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Abstract

本發明的實施例提出一種堆疊式封裝裝置，包括扇出結構、一或多個記憶體晶片與多個連接件，這些連接件將記憶體晶片接合至扇出結構。扇出結構包括了邏輯晶片、環繞邏輯晶片的模塑料與多個導電柱，這些導電柱穿過所述的模塑料。

Description

堆疊式封裝裝置與其形成方法
本發明是有關於一種半導體裝置，且特別是有關於一種堆疊式封裝(package-on-package，PoP)裝置與其形成方法。
三維封裝應用(例如堆疊式封裝)已越來越流行且廣泛地使用在行動裝置中，這是因為它可以透過，例如增加頻寬且縮短強化邏輯晶片(例如為應用處理器)與記憶體晶片之間的佈線距離，而增強電氣效能。然而，隨著寬輸入輸出(wide input/output，wide I/O)記憶體晶片的問世，對於更高速度、更低功耗、更小的封裝尺寸與更少封裝層的需求也在增加。較大較厚的裝置與物理維度的電氣效能則變得受限。由於球型接頭所降低的良率，使用習知球形接頭封裝的堆疊式封裝裝置的挑戰在於要符合精細通道與高密度佈線的需求。因此，需要更好的裝置及其製造方法。
本發明的實施例提出一種堆疊式封裝裝置。此 堆疊式封裝裝置包括了第一扇出結構、第二扇出結構與接合第一扇出結構與第二扇出結構的多個連接件。此第一扇出結構包括了邏輯晶片、環繞邏輯晶片的第一模塑料、以及穿過第一模塑料的多個第一導電柱。第二扇出結構包括了一或多個記憶體晶片、環繞記憶體晶片的第二模塑料、以及穿過第二模塑料的多個第二導電柱。
以另一個角度來說，本發明的實施例提出一種堆疊式封裝裝置。此堆疊式封裝裝置包括了扇出結構、接合至扇出結構的表面的一或多個記憶體晶片、以及接合至所述扇出結構的該表面的封裝基板。此扇出結構包括了邏輯晶片，環繞邏輯晶片的模塑料，以及穿過模塑料的多個貫穿模塑孔。封裝基板包括了貫穿孔以及設置在此貫穿孔中的一或多個記憶體晶片。
以另一個角度來說，本發明的實施例提出一種堆疊式封裝裝置的形成方法。此方法包括：形成扇出結構並且將一或多個寬輸入輸出晶片接合至此扇出結構。所述的寬輸入輸出晶片是電性連接至邏輯晶片。形成扇出結構的方法包括：在載體上的光阻層中圖形化出多個第一開口；以導電材料填滿這些第一開口以形成多個導電柱，並且移除光阻層，留下在導電柱之間的多個第二開口。形成扇出結構的方法還包括：在載體上的其中一個第二開口中設置邏輯晶片，並且以模塑料來填滿第二開口。其中模塑料的側表面與邏輯晶片是實質上等高。
為讓本發明能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
100‧‧‧扇出結構
101‧‧‧載體
102‧‧‧晶種層
104‧‧‧光阻
106‧‧‧開口
108‧‧‧導電柱
110、110’‧‧‧開口
112‧‧‧邏輯晶片
114‧‧‧模塑料
116‧‧‧重佈層
118‧‧‧接觸墊
120A、120B‧‧‧連接件
122‧‧‧底膠材料
126‧‧‧連接件
200‧‧‧扇出結構
208‧‧‧導電柱
212、212A~212D‧‧‧記憶體晶片
214‧‧‧模塑料
218、230‧‧‧接觸墊
300‧‧‧封裝結構
302‧‧‧封裝基板
304‧‧‧動態隨機存取記憶體晶粒
306‧‧‧焊線
308‧‧‧模塑料
400‧‧‧堆疊式封裝裝置
500‧‧‧封裝基板
502‧‧‧貫穿孔
504‧‧‧互連結構
506‧‧‧連接件
600‧‧‧堆疊式封裝裝置
圖1~圖11A是根據一實施例繪示製造堆疊式封裝裝置的多個中間階段的剖面圖；圖11B是根據另一實施例繪示堆疊式封裝裝置的剖面圖；圖12~圖16A是根據另一些實施例繪示製造堆疊式封裝裝置的多個中間階段的剖面圖；以及圖16B是根據另一實施例繪示堆疊式封裝裝置的剖面圖。
以下的揭露提供了各種實施例或例子，用以實作所提供標的的不同特徵。為了簡化本揭露，一些元件與佈局的具體例子會在以下說明。當然，這些僅僅是例子而不是用以限制本揭露。例如，若在後續說明中提到了第一特徵形成在第二特徵上面，這可包括第一特徵與第二特徵是直接接觸的實施例；這也可以包括第一特徵與第二特徵中還形成其他特徵的實施例，這使得第一特徵與第二特徵沒有直接接觸。此外，本揭露可能會在各種例子中重複圖示符號及/或文字。此重複是為了簡明與清晰的目的，但本身並不決定所討論的各種實施例及/或設置之間的關係。
再者，在空間上相對的用語，例如底下、下面、較低、上面、較高等，是用來容易地解釋在圖示中一個元件 或特徵與另一個元件或特徵之間的關係。這些空間上相對的用語除了涵蓋在圖示中所繪的方向，也涵蓋了裝置在使用或操作上不同的方向。這些裝置也可被旋轉(例如旋轉90度或旋轉至其他方向)，而在此所使用的空間上相對的描述同樣可以相對應的解釋。
各種實施例包含具有邏輯晶片與記憶體晶片的堆疊式封裝裝置。在邏輯晶片與記憶體晶片之間的相互連接可用扇出結構、堆疊式晶片(chip-on-chip)結構或基板上晶片(chip-on-substrate)結構來完成。例如，一或多個晶片可被模塑料所環繞，且互連結構會形成在模塑料當中。如此，每個晶片的輸入輸出墊(I/O pad)可以分散在比晶片本身更大的表面面積上，相對於現今的堆疊式封裝裝置來說具有多種優點。例如，各種實施例可以符合系統級封裝(system in package，Sip)的細球間距的需求，以將邏輯晶片(例如為應用處理器(application processor，AP))相互連接至寬輸入輸出記憶體的堆疊。其他的優點特徵可包括更好的速度與功耗、較低的製造成本、增加的容量、較好的良率、較薄的外型尺寸與較好的等級2可靠性裕度(level 2 reliability margins)等。
圖1~圖11A是根據一些實施例繪示製造堆疊式封裝裝置400(參照圖11A)的多個中間階段的剖面圖。圖1繪示了載體(carrier)101的剖面圖。載體101可為玻璃載體或類似物。導電的晶種層102可設置在(例如使用濺鍍製程)載體101之上。晶種層102可由導電材料來形成，例如為銅、銀、金與類似物。
圖2至圖4繪示了在載體101上形成導電柱的剖面圖。如圖2所示，圖形化的光阻104可形成於晶種層102與載體101之上。例如，光阻104可以沉積在晶種層102上以做為一個包覆層(blanket layer)。接下來，部份的光阻104可用光罩來曝光。取決於所使用的是正光阻或是負光阻，已曝光或沒曝光部分的光阻104會被移除。所造成的圖形化光阻104可包括開口106，其設置在載體101的周圍區域。
圖3繪示了在開口106中填滿如銅、銀、金與類似物的導電材料以形成導電柱(conductive pillar)108的剖面圖。上述填滿開口106的步驟可包括以下步驟。首先，以導電材料沉積一晶種層(未繪示)並電化學電鍍開口106。開口106中可填滿過量的導電材料，並且可進行化學機械式研磨(chemical mechanical polish，CMP)來移除光阻104以上過剩部分的導電材料。接下來，如圖4所示，例如在灰化處理中將光阻104移除。
如此一來，導電柱108會形成在晶種層102之上。或者，導電柱108也可替換為導電間柱(conductive studs)或導電線(例如為銅線、金線或銀線)。導電柱108彼此由開口110所隔開。在相鄰的導電柱108中至少有一個110’足夠大到可放置一個半導體晶片(例如為邏輯晶片112，可參照圖5)。在一些實施例中，導電柱108可具有約100微米(μm)至約500微米的間距(pitch)。
圖5繪示了在載體101上設置半導體晶片(例如為邏輯晶片112)的剖面圖。邏輯晶片112可以是一個應用 處理器，但也可以使用其他種類的半導體晶片(例如記憶體晶片)。在一些實施例中，邏輯晶片112具有約40微米至300微米的厚度。邏輯晶片112的側表面與導電柱108實質上是等高的。這可透過以下的步驟來完成，例如選擇適當高度的光阻104並/或在導電柱108上實施CMP至與邏輯晶片112搭配的高度。邏輯晶片112可附著於載體101(例如利用黏接層)。
接下來，如圖6所示，分配模塑料114以填滿導電柱108與邏輯晶片112之間的空隙。模塑料114可包括任意適當的材料，例如為環氧樹脂、模塑底膠材料等。形成模塑料114的適當方法可包括壓模成型(compressive molding)、移轉成型(transfer molding)、液體密封成型(liquid encapsulent molding)等。例如，模塑料114可以液體的形式分配在導電柱108/邏輯晶片112之間。接著，實施固化程序(curing process)以固化模塑料114。模塑料114的填充可能會溢出導電柱108/邏輯晶片112，使得模塑料114會覆蓋在導電柱108/邏輯晶片112的上表面。可實施CMP(或其他研磨/回蝕刻技術)以暴露出導電柱108/邏輯晶片112的上表面。在所造成的結構中，模塑料114的側表面、導電柱108與邏輯晶片112可實質上地等高。此外，導電柱108可穿過模塑料114，如此一來導電柱108也可被稱為貫穿模塑孔(through-molding vias，TMVs)108。從上視圖(未繪示)來看，模塑料114可環繞邏輯晶片112。
互連結構116(例如為一或多個重佈層(redistribution layers，RDLs))可形成於邏輯晶片112與 模塑料114之上。接觸墊118也可形成於導電柱108之上。所造成的扇出結構100是繪示於圖7當中。扇出結構100包括了邏輯晶片112、導電柱108、模塑料114與重佈層116。重佈層116可在模塑料114與導電柱108之上橫向地穿過邏輯晶片112的邊緣。重佈層116可包括在一或多個聚合物層中所形成的互連結構(例如為導線及/或穿孔(vias))。此聚合物層可用任意適當的材料來形成，例如為聚醯亞胺(polyimide，PI)、聚苯噁唑(polybenzoxazole，PBO)，苯並環丁烯(benzocyclobuten，BCB)、環氧樹脂(epoxy)、矽、丙烯酸酯(acrylates)、奈米填充的酚醛樹脂(nano-filled pheno resin)、矽氧烷(siloxane)、氟化聚合物(fluorinated polymer)、降冰片烯高分子(polynorbornene)等，並使用任意適當的方法，例如為旋塗式的塗布技術(spin-on coating technique)等。當邏輯晶片112仍然附著於載體101時(並沒有繪示於圖7中)，此聚合物層可形成於邏輯晶片112之上。
重佈層116的互連結構可形成於上述的聚合物層之中，並且電性連接於邏輯晶片112及/或導電柱108。此互連結構的形成可包括：圖形化聚合物層(例如使用微影與蝕刻的製程)並在圖形化後的聚合物層中形成互連結構(例如，沉積一晶種層並使用遮罩層來定義互連結構的形狀)。在形成重佈層116以後，可將扇出結構100從載體101中移除，並且扇出結構100的方向可如圖7所示般翻轉。
圖8繪示了在扇出結構100中，於重佈層116之上形成連接件120(標示為120A與120B)的剖面圖。連接 件120透過重佈層116提供了至邏輯晶片112及/或導電柱108的電性連結。連接件120在維度與分佈上可以是一致或不一致的。例如，連接件120A可以是間距約為30微米至約100微米的微凸塊(microbumps)，其中連接件120B可以是可控塌陷晶片連接(control collapse chip connection，C4)凸塊，其具有約100微米至500微米的間距。不同尺寸的連接件120允許在接下來的製程步驟中(例如參照圖9)可電性連接至不同的電氣特徵。在這樣的實施例中，在形成連接件120B之前，可先形成連接件120A於重佈層116之上。在一些實施例中，連接件120可具有約30微米至100微米的高度。
圖9繪示了扇出結構100，其是利用連接件120來接合至另一個扇出結構200。底膠材料122可在連接件120的周圍，分配於扇出結構100與200之間。底膠材料122可提供支持給連接件120。
扇出結構200可實質上地相似於(在結構上與形成製程上)扇出結構100，其中相似的圖式符號所指的是相似的元件。例如，扇出結構200包括了半導體晶片(例如，記憶體晶片212)與導電柱208。記憶體晶片212可為寬輸入輸出的記憶體晶片(例如，具有一千個或更多個接觸墊230)，但也可使用其他類型的半導體晶片(例如，其他類型的記憶體晶片)。在一些實施例中，記憶體晶片212可具有約40微米至300微米的厚度。
記憶體晶片212與導電柱208可藉由模塑料214而一起固定，並且記憶體晶片212的寬側面、導電柱208 與模塑料214為實質上等高。扇出結構200可不包括任意一個重佈層，並且連接件120可透過電性連接至導電柱208與記憶體晶片212上的接觸墊來接合至扇出結構200。例如，連接件120A可以電性連接至記憶體晶片212上的接觸墊230，並且連接件120B可電性連接至導電柱208上的接觸墊218。連接件120A與120B的間距可被選擇，以分別對應至接觸墊230與218的間距。
額外的封裝組件可選擇地接合至扇出結構100與200。例如，積體電路封裝結構300可相對於扇出結構200接合至扇出結構100的另一面。所造成的結構如圖10所繪示。封裝結構300可為記憶體封裝，亦如為低功率雙倍資料率2(low-power double data rate 2，LP-DDR2)封裝、低功率雙倍資料率3(LP-DDR3)封裝、LP-DDRx封裝、寬輸入輸出封裝等。封裝結構300可包括多個堆疊的記憶體晶粒，例如為動態隨機存取記憶體(dynamic random acces memory，DRAM)晶粒304，其是接合至封裝基板302(例如利用焊線306)。DRAM晶粒304與焊線306可被保護性的模塑料308給包住。其他類型的封裝結構也可以被使用。或者，取決於封裝的設計，也可以省略封裝結構300。
封裝基板302可以是有機基板或是陶瓷基板，並且可包括互連結構(例如，導電線及/或通孔)，此互連結構提供了至DRAM晶粒304的電性連接。連接件124可以設置在封裝基板302的底部表面。封裝結構300可用連接件124來接合至扇出結構100，其中連接件124可接合至導電柱108上的接觸墊118。邏輯晶片112可透過重佈層116、 導電柱108、連接件124、基板302與焊線306電性連接至DRAM晶粒304。如此一來，藉由扇出結構100中的導電柱108，額外的封裝結構可接合至扇出結構100，其中扇出結構100是電性連接至邏輯晶片112。
圖11A繪示了相對於扇出結構100在扇出結構200的表面上設置連接件126(例如為球柵陣列(ball grid array，BGA)球)的剖面圖。於是，堆疊式封裝裝置400是完整的。連接件126會形成在接觸墊218上以電性連接至導電柱208。在一些實施例中，連接件126具有約250微米至500微米的間距。連接件126可用來將堆疊式封裝裝置400電性連接至一個主機板(未繪示)或另一個電子系統的裝置組件。導電柱208(連同堆疊式封裝裝置400的其他互連結構)提供了連接件126與邏輯晶片112，記憶體晶片212及/或DRAM晶粒304之間的電性連接。
堆疊式封裝裝置400包括了兩個扇出結構100、200，其是透過連接件120與重佈層116彼此電性連接。扇出結構100、200中的導電柱108、208更分別提供了至額外封裝組件(例如，封裝結構300及/或主機板)的電性連接。因此，邏輯晶片(例如為應用處理器)與記憶體晶片(例如，寬輸入輸出晶片)可用扇出結構(例如模塑料、導電柱、與重佈層)來接合。堆疊式封裝裝置400的優點特徵可包括以下一或多個特徵：成本效應(例如，因為使用了相對簡單的互連結構，而不用昂貴的基板貫穿通孔(through-substrate vias)、增加的容量(例如，因為能夠包括寬輸入輸出晶片與其他記憶體晶片)、改良的電性連接的 可靠度、較好的良率、較快的電氣速度(例如，因為在邏輯晶片112與記憶體晶片212、304之間較短的佈線)、較薄的外形尺寸，好的等級2可靠性裕度(例如，在溫度循環(temperature cycle，TC)及/或掉落測試中有更好的結果)等。
圖11B是根據另一實施例繪示堆疊式封裝裝置400的剖面圖。在圖11B中，扇出結構200可包括多個堆疊的半導體晶片，例如為記憶體晶片212A~212D(可以是寬輸入輸出晶片)。每個記憶體晶片212A~212D可具有約40微米至約300微米的厚度。雖然在此繪示了四個記憶體晶片，但根據不同的封裝設計也可以用任意數目的記憶體晶片。這些堆疊的半導體晶片可以透過設置在記憶體晶片212A~212D之間的連接件(未繪示)彼此連接。扇出結構100可以透過最上層的記憶體晶片212A的上表面上的接觸墊來接合至堆疊的記憶體晶片212A~212D。因此，額外的寬輸入輸出晶片可以用類似的封裝設置來包含於堆疊式封裝裝置400當中。
圖12~圖16A是根據另一些實施例繪示了製造堆疊式封裝裝置600(參照圖16A)的多個中間階段的剖面圖。圖12繪示了扇出結構100的剖面圖。圖12中的扇出結構100可以是實質上類似於圖8中的扇出結構100，其中相似的圖式符號所指的是相似的元件。接下來，如圖13所示，例如為記憶體晶片212(例如，寬輸入輸出晶片)的半導體晶片是接合至扇出結構100。不像堆疊式封裝裝置400，記憶體晶片212可以不是分離的扇出結構200的一部分。記憶體 晶片212可利用連接件120A接合至扇出結構100。模塑料122A可以分配在連接件120A之間。重佈層116可提供記憶體晶片212與邏輯晶片112/導電柱108之間的電性連接。
圖14A繪示了封裝基板500接合至扇出結構100的剖面圖。封裝基板500可以是印刷電路板、中介板(interposer)或類似物，並且封裝基板500可包括導通的互連結構504，其可電性連接至連接件120B。在一些實施例中，封裝基板500可具有約50微米至1300微米的厚度。
封裝基板500還包括了貫穿孔502，並且記憶體晶片212可至少部分地設置於貫穿孔502當中。如圖14B所示的封裝基板500的上視圖，封裝基板500可環繞記憶體晶片212。在一些實施例中，可對封裝基板500實施雷射鑽孔來形成貫穿孔502。於是，封裝基板500與記憶體晶片212都可設置於扇出結構100的同一側。
圖15繪示了額外封裝組件選擇性地接合至扇出結構100的剖面圖。例如，封裝結構300可以相對於記憶體晶片212接合至扇出結構100的另一面。封裝結構300可為記憶體封裝，例如為LP-DDR2封裝、LP-DDR3封裝等。封裝結構300可包括接合至封裝基板302的一或多個堆疊的記憶體晶粒(例如DRAM晶粒304)，例如可用焊線306來接合。DRAM晶粒304與焊線306可被保護性的模塑料308所包覆。也可以使用其他類型的封裝結構。或者，取決於封裝的設計，也可以省略封裝結構300。
連接件124可以設置在封裝基板302的底部表面。封裝結構300可利用連接件124接合至扇出結構100，其中連接件124可接合至導電柱108上的接觸墊。邏輯晶片112可透過重佈層116、導電柱108、連接件124與基板302電性連接至DRAM晶粒304。
圖16A繪示了在封裝基板500上相對於扇出結構100的一側設置連接件506(例如，BGA球)的剖面圖。如此，堆疊式封裝裝置600是完整的。在一些實施例中，連接件506具有約250微米至約500微米的間距。連接件506可用來將堆疊式封裝裝置600電性連接至一個主機板(未繪示)或電氣系統的另一個裝置組件。封裝基板500、重佈層116、導電柱108與各種連接件120、124中的互連結構提供了連接件506與邏輯晶片112、記憶體晶片212及/或封裝結構300之間的電性連接。
堆疊式封裝裝置600包括了接合至封裝基板500/記憶體晶片212的扇出結構100。扇出結構100是透過連接件120與重佈層116電性連接至記憶體晶片212與封裝基板500。扇出結構100中的導電柱108還可提供至額外封裝組件(例如，封裝結構300及/或主機板)的電性連接。如此，邏輯晶片(例如為應用處理器)與記憶體晶片(例如，寬輸入輸出晶片)可用扇出結構(例如具有模塑料、導電柱及/或重佈層)彼此接合。堆疊式封裝裝置600的優點特徵可包括以下一或多個優點：成本效應(例如，因為使用了相對簡單的互連結構，而不用昂貴的基板貫穿通孔、增加的容量(例如，因為能夠包括寬輸入輸出晶片與其他記憶體晶片)、改 良的電性連接的可靠度、較好的良率、較快的電氣速度(例如，因為在邏輯晶片112與記憶體晶片212、304之間較短的佈線)、較薄的外形尺寸，好的等級2可靠性裕度(例如，在溫度循環及/或掉落測試中有更好的結果)等。
圖16B是根據其他實施例繪示堆疊式封裝裝置600的剖面圖。在圖16B中，堆疊式封裝裝置600可包括多個堆疊的半導體晶片，例如為記憶體晶片212A~212D(可為寬輸入輸出晶片)。雖然在此繪示了四個記憶體晶片，但根據不同的封裝設計也可以用任意數目的記憶體晶片。這些堆疊的半導體晶片可以透過設置在記憶體晶片212A~212D之間的連接件彼此連接。扇出結構100可以透過最上層的記憶體晶片212A的上表面上的接觸墊來接合至堆疊的記憶體晶片212A~212D。因此，額外的寬輸入輸出晶片可以用類似的封裝設置來包含於堆疊式封裝裝置600當中。
因此，如上所詳述的，在一些實施例中，具有邏輯晶片與記憶體晶片的堆疊式封裝裝置可用扇出結構來接合。例如第一扇出結構可提供被模塑料所環繞的邏輯晶片。互連結構(例如為導電柱)可穿過模塑料。各種記憶體晶片(例如寬輸入輸出晶片、LP-DDR2/DP-DDR3晶片等)可接合至第一扇出結構的任一側，並且重佈層與互連結構會將記憶體晶片電性連接至邏輯晶片。此記憶體晶片可以設置在第二扇出結構中、或直接接合至第一扇出結構、或提供在另一個封裝結構中等。各種實施例的優點可包括：改善的速度與功耗、較低的製造成本、增加的容量、改善的良率、較薄的外形尺寸、改善的等級2可靠性裕度等。
在一實施例中，堆疊式封裝裝置包括了第一扇出結構、第二扇出結構與接合第一扇出結構與第二扇出結構的多個連接件。此第一扇出結構包括了邏輯晶片、環繞邏輯晶片的第一模塑料、以及穿過第一模塑料的多個第一導電柱。第二扇出結構包括了一或多個記憶體晶片、環繞記憶體晶片的第二模塑料、以及穿過第二模塑料的多個第二導電柱。
在另一實施例中，堆疊式封裝裝置包括了扇出結構、接合至扇出結構的表面的一或多個記憶體晶片、以及接合至所述扇出結構的該表面的封裝基板。此扇出結構包括了邏輯晶片，環繞邏輯晶片的模塑料，以及穿過模塑料的多個貫穿模塑孔。封裝基板包括了貫穿孔以及設置在此貫穿孔中的一或多個記憶體晶片。
在另一實施例中，一種用以形成堆疊式封裝裝置的方法包括：形成扇出結構並且將一或多個寬輸入輸出晶片接合至此扇出結構。所述的寬輸入輸出晶片是電性連接至邏輯晶片。形成扇出結構的方法包括：在載體上的光阻層中圖形化出多個第一開口；以導電材料填滿這些第一開口以形成多個導電柱，並且移除光阻層，留下在導電柱之間的多個第二開口。形成扇出結構的方法還包括：在載體上的其中一個第二開口中設置邏輯晶片，並且以模塑料來填滿第二開口。其中模塑料的側表面與邏輯晶片是實質上等高。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故 本發明的保護範圍當視後附的申請專利範圍所界定者為準。

Claims (6)

  1. 一種堆疊式封裝(package-on-package，PoP)裝置，包括：一第一扇出結構，包括：一邏輯晶片；一第一模塑料，環繞該邏輯晶片；以及多個第一導電柱，穿過該第一模塑料；一第二扇出結構，包括：一或多個記憶體晶片；一第二模塑料，環繞該一或多個記憶體晶片；以及多個第二導電柱，穿過該第二模塑料；多個第一連接件，包括多個微凸塊(microbumps)與多個可控塌陷晶片連接(control collapse chip connection，C4)凸塊，該些微凸塊之間的間距小於該些可控塌陷晶片連接凸塊之間的間距，該些第一連接件將該第一扇出結構接合至該第二扇出結構，其中該些微凸塊用以電性連接至該一或多個記憶體晶片上的接觸墊，該些可控塌陷晶片連接凸塊電性連接至該些第二導電柱；以及一封裝結構，相對於該第二扇出結構接合至該第一扇出結構的一表面，其中該封裝結構包括：多個堆疊的動態隨機存取記憶體(dynamic random access memory，DRAM)晶片；一封裝基板，電性連接至該些堆疊的動態隨機存取記憶體晶片；以及多個第二連接件，將該封裝基板電性連接至該第一扇出結構，其中該些第二連接件是對齊至該些第一導電柱。
  2. 如申請專利範圍第1項所述之堆疊式封裝裝置，其中該第一扇出結構更包括一或多個重佈層(redistribution layers，RDLs)，其將該第二扇出結構電性連接至該邏輯晶片與該些第一導電柱。
  3. 如申請專利範圍第1項所述之堆疊式封裝裝置，其中該邏輯晶片的側表面、該第一模塑料、以及該些第一導電柱為實質上等高，並且該一或多個記憶體晶片的側表面、該第二模塑料、與該些第二導電柱為實質上等高。
  4. 一種堆疊式封裝裝置，包括：一扇出結構，包括：一邏輯晶片；一模塑料，環繞該邏輯晶片；以及多個貫穿模塑孔(through molding vias，TMVs)，穿過該模塑料；多個連接件，包括多個微凸塊(microbumps)與多個可控塌陷晶片連接(control collapse chip connection，C4)凸塊，該些微凸塊之間的間距小於該些可控塌陷晶片連接凸塊之間的間距，該些連接件接合至該扇出結構；一或多個記憶體晶片，接合至該扇出結構的一第一表面，其中該些微凸塊用以電性連接至該一或多個記憶體晶片上的接觸墊；以及一第一封裝基板，接合至該扇出結構的該第一表面，其中該第一封裝基板包括包括多個導電柱與一貫穿孔，並且該一或多個記憶體晶片是設置於該貫穿孔當中，使該第一封裝基板環繞該一或多個記憶體晶片，其中該第一封裝基板為印刷電路板或中介板，該些可控塌陷晶片連接凸塊電性連接至該些導電柱。
  5. 如申請專利範圍第4項所述之堆疊式封裝裝置，其中該扇出結構還包括在該模塑料與該邏輯晶片之上的一或多個重佈層，其中該一或多個重佈層將該一或多個記憶體晶片與該封裝基板電性連接至該邏輯晶片與該些貫穿模塑孔。
  6. 一種堆疊式封裝的形成方法，包括：形成一第一扇出結構，其中形成該第一扇出結構的步驟包括：在一載體上的一光阻層中圖形化出多個第一開口；以一導電材料填滿該些第一開口以形成多個第一導電柱；移除該光阻層，留下在該些第一導電柱之間的多個第二開口；在該載體上的該些第二開口的其中之一設置一邏輯晶片；並且以一模塑料填滿該些第二開口，其中該模塑料的側表面與該邏輯晶片為實質上等高；並且形成多個第一連接件，該些第一連接件包括多個微凸塊(microbumps)與多個可控塌陷晶片連接(control collapse chip connection，C4)凸塊，該些微凸塊之間的間距小於該些可控塌陷晶片連接凸塊之間的間距，該些第一連接件接合至該第一扇出結構；將一或多個寬輸入輸出晶片接合至該第一扇出結構，其中該些微凸塊用以電性連接至該一或多個記憶體晶片上的接觸墊，該一或多個寬輸入輸出晶片是電性連接至該邏輯晶片；將一第二封裝基板接合至該第一扇出結構，其中該第二封裝基板包括多個第二導電柱與一貫穿孔，該一或多個寬輸入輸出晶片於該貫穿孔中，該些可控塌陷晶片連接凸塊電性連接至該些第二導電柱；以及在接合該一或多個寬輸入輸出晶片以後，將一封裝結構相對於該一或多個寬輸入輸出晶片接合至該第一扇出結構的一表面，其中該封裝結構包括：多個堆疊的動態隨機存取記憶體晶片；一第一封裝基板，電性連接至該些堆疊的動態隨機存取記憶體晶片；以及多個第二連接件，將該第一封裝結構電性連接至該第一扇出結構，其中該些第二連接件是對齊至該些第一導電柱。
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