TWI662040B - 多雜芳族化合物及使用其的有機電激發光元件 - Google Patents

多雜芳族化合物及使用其的有機電激發光元件 Download PDF

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TWI662040B
TWI662040B TW107122519A TW107122519A TWI662040B TW I662040 B TWI662040 B TW I662040B TW 107122519 A TW107122519 A TW 107122519A TW 107122519 A TW107122519 A TW 107122519A TW I662040 B TWI662040 B TW I662040B
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organic electroluminescence
compound
electroluminescence element
organic
light
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TW201917131A (zh
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顏豐文
莊立杰
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機光科技股份有限公司
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Abstract

本發明揭示一種衍生自7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]核心結構的新穎多雜芳族化合物。該多雜芳族化合物可用作有機電激發光材料用於有機電激發光元件和電子設備。

Description

多雜芳族化合物及使用其的有機電激發光元件
本發明係關於一種具有7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]核心結構的多雜芳族化合物，更具體言之係關於一種使用該多雜芳族化合物的有機電激發光元件。
有機電激發光（有機EL）元件是一種有機發光二極體（LED），其中發光層是由有機化合物製成的膜，有機化合物可響應電流而發光。包含有機化合物的發光層被夾置於兩個電極之間。有機EL元件由於其高照度、重量輕、超薄外形、自照明而無需背光、低功耗、廣視角、高對比、製造方法簡單以及反應時間快速而被應用於平板顯示器。
1987年在伊士曼柯達（Eastman Kodak）公司的鄧青雲（Ching W. Tang）和史蒂芬范斯萊克（Steven Van Slyke）報導出第一個二極體元件。該元件使用具有單獨的電洞傳輸層和電子傳輸層的雙層結構，使得復合和發光在有機層的中間發生。此舉造成操作電壓降低並且效率提高，從而引領當今主流的有機EL元件研究及元件生產。
典型上，有機EL係由位於兩個電極之間的有機材料層構成。有機材料層包括電洞傳輸層（hole transporting layer，HTL）、發光層（emitting layer，EML）、及電子傳輸層（electron transporting layer，ETL）。有機電激發光的基本機制涉及載子（carrier）的注入、傳輸、及復合以及激子（exciton）的形成，以進行發光。當施加外部電壓到有機EL元件時，電子和電洞分別從陰極和陽極注入。電子從陰極注入最低未佔用分子軌域（lowest unoccupied molecular orbital，LUMO） 中，而電洞從陽極注入最高佔用分子軌域（highest occupied molecular orbital，HOMO）中。隨後，電子在發光層中與電洞重組而形成激子，然後激子失活而發光。當發光分子吸收能量而達到激發態時，依據電子和電洞的自旋組合，激子可呈單重態或三重態。眾所周知，在電激發下形成的激子通常包括25％的單重態激子和75％的三重態激子。然而，在螢光材料中，75％的三重態激子中的電生成能量將作為熱量消散，因為從三重態衰減是自旋禁阻（spin forbidden）的。因此，螢光電激發光元件僅具有25%的內部量子效率（internal quantum efficiency），導致理論上最高的外部量子效率（EQE）僅有5％，因為元件的光輸出耦合效率只有約20％。相較於螢光電激發光元件，磷光有機EL元件利用自旋─軌域相互作用（spin-orbit interacttion）來促進單重態與三重態之間的系統間穿越（intersystem crossing），因此來自單重態和三重態的發光皆可取得，而且電激發光元件的內部量子效率可自25％升至100％。
在2012年，安達教授（Adachi）和其同事開發出一種新型螢光有機EL元件。此新型有機EL元件體現熱活化延遲螢光（thermally activated delayed fluorescence，TADF）機制，其係一種有希望經由反向系統間穿越（reverse intersystem crossing，RISC）機制，藉由將自旋禁阻的三重態激子轉化至單重態能階以獲得高比例的單重態激子形成的方式。
三重態及單重態激子均能被磷光有機EL元件利用。由於與單重態激子相比，三重態激子具有較長的壽命和擴散距離，故磷光有機EL元件通常需要在發光層（EML）與電子傳輸層（ETL）之間設置附加的電洞阻擋層（HBL）或以具有電洞阻擋能力的電子傳輸層（HBETL）取代典型的ETL。使用HBL或HBETL的目的是為了將注入電洞與電子的復合及生成激子的鬆弛（relaxation）侷限在發光層內，因此能夠提升元件的效率。為了滿足這些作用，電洞阻擋材料必須具有適合阻止電洞從發光層移到電子傳輸層並使電子從電子傳輸層移到發光層的HOMO（最高佔用分子軌域）和LUMO（最低未佔用分子軌域）能階。除此之外，還需要磷光發射主體材料具有良好的熱和電化學穩定性。
具有10H-螺[吖啶-9,9'-芴]結構的化合物已經在有機EL元件上找到用途，此可見於美國專利第8,632,893號。此外，具有7',7'-二甲基-5',7',10,11-四氫螺[二苯并[a,d][7]輪烯-5,13'-茚并[1,2-b]吖啶]結構的化合物被用於OLED，其由韓國專利申請號1020100029865公開。在本發明中，我們開發出具有7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]核心結構的新穎多雜芳族化合物，用以改善有機EL元件的性能。
因此，本發明的目的是提供一種多雜芳族化合物及使用該多雜芳族化合物的有機EL元件，該有機EL元件能夠在降低的電壓下操作並且表現出高的發光效率。
本發明的另一目的是提供一種多雜芳族化合物，該多雜芳族化合物可用作發光層中的磷光主體材料、螢光主體材料、螢光摻雜材料、TADF主體材料、或TADF摻雜材料、及/或有機EL元件的電子傳輸層（ETL）材料，以改善功耗和發光效率。
依據本發明，一種可用於有機EL元件的多雜芳族化合物被揭示出。該多雜芳族化合物係由下式（1）表示： 式（1） 其中X為O、S、或Se；n和p各自獨立為0至2的整數；L表示以下式（2）： 式（2） 並且B表示以下式（3）： 式（3） 其中m為0至4的整數；Y為O、S、Se、CR 6R 7、NR 8或SiR 9R 10；以及R 1至R 11係獨立選自由氫原子、鹵化物、具有1至60個碳原子的經取代或未經取代烷基、具有6至60個碳原子的經取代或未經取代芳基、具有6至60個碳原子的經取代或未經取代芳烷基、具有3至60個碳原子的經取代或未經取代雜芳基、及具有6至60個碳原子的經取代或未經取代芳胺基所組成之群組。
本發明進一步揭示一種有機電激發光元件。該有機電激發光元件包含由陰極和陽極組成的一電極對、及在該電極對之間的一發光層及一個或更多個有機薄膜層。該發光層和該有機薄膜層中之至少一者包含式（1）的多雜芳族化合物。
本發明探究多雜芳族化合物及使用該多雜芳族化合物的有機電激發光元件（有機EL元件）。下面將詳細說明生產、結構及組成部分，以使本發明可被充分理解。本發明的應用顯然不受限於所屬技術領域中具有通常知識者熟知的具體細節。另一方面，不對眾所周知的一般組成部分和程序作詳細描述，以避免對本發明造成不必要的限制。現在將在下面更詳細地描述本發明的一些較佳實施例。然而，應當理解的是，除了本文明確描述的實施例之外，本發明還可實施於各種其他實施例中，也就是說，本發明還可被廣泛應用於其他實施例，且本發明的範圍不會因此受到明確的限制，只受隨附申請專利範圍的內容限制。
在本發明的一個實施例中，揭露了可以用作發光層的主體材料、螢光摻雜材料、熱活化延遲螢光主體材料、或熱活化延遲螢光摻雜材料、及/或有機EL元件的電子傳輸材料的多雜芳族化合物。該多雜芳族化合物係由下式（1）表示： 式（1） 其中X為O、S、或Se；n和p各自獨立為0至2的整數；L表示以下式（2）： 式（2） 並且B表示以下式（3）： 式（3） 其中m為0至4的整數；Y為O、S、Se、CR 6R 7、NR 8或SiR 9R 10；以及R 1至R 11係獨立選自由氫原子、鹵化物、具有1至60個碳原子的經取代或未經取代烷基、具有6至60個碳原子的經取代或未經取代芳基、具有6至60個碳原子的經取代或未經取代芳烷基、具有3至60個碳原子的經取代或未經取代雜芳基、及具有6至60個碳原子的經取代或未經取代芳胺基所組成之群組。
在一些實施例中，R 8或R 11表示以下取代基中之一者： 。
較佳地，該多雜芳族化合物係由以下式（4）至式（9）中之一者表示： formula (4), formula (5), formula (6), formula (7), formula (8), formula (9), 其中X、n、p、L、m、Y、及R 1至R 11具有與上述定義相同的含義。
較佳地，該多雜芳族化合物為以下化合物中之一者： 。
在本發明的另一個實施例中，揭示了一種有機電激發光元件。該有機電激發光元件包含由陰極和陽極組成的一電極對、及在該電極對之間的一發光層及一個或更多個有機薄膜層。該發光層和該有機薄膜層中之至少一者包含式（1）的多雜芳族化合物。
在一些實施例中，包含該式（1）之多雜芳族化合物的該發光層為一主體材料。該主體材料可以是磷光主體材料或螢光主體材料。在某些實施例中，包含該式（1）之多雜芳族化合物的該發光層被用作一螢光摻雜材料。
在一些實施例中，包含該式（1）之多雜芳族化合物的該發光層為一熱活化延遲螢光主體材料。在其他實施例中，包含該式（1）之多雜芳族化合物的該發光層被用作一熱活化延遲螢光摻雜材料。在一些實施例中，包含該式（1）之多雜芳族化合物的該有機薄膜層為一電子傳輸層。
在本發明的另一實施例中，該有機電激發光元件為一發光面板。在本發明的其他實施例中，該有機電激發光元件為一背光面板。
將藉由以下的例示性實施例來清楚闡明本發明的多雜芳族化合物之詳細製備，但本發明並不限於此等例示性實施例。實施例1至實施例6說明本發明的多雜芳族化合物之製備，而實施例7說明有機EL元件的製造及測試報告。 實施例1
N-(2-溴苯基)-9,9-二甲基-9H-芴-2-胺之合成
將10 g（35.3 mmol）的1-溴-2-碘苯、7.4 g（35.3 mmol）的9,9-二甲基-9H-芴-2-胺、0.52 g（0.7 mmol）的Pd(dppf)Cl 2、6.8 g（70.6 mmol）的叔丁醇鈉、及60 ml的甲苯的混合物除氣並置於氮氣下，然後在100℃加熱2小時。反應完成後，使混合物冷卻至室溫，然後過濾移除溶劑。粗產物以管柱層析純化，產出9.4 g的黃色固體（73％）。 1H NMR (CDCl 3, 400 MHz)：化學位移(ppm) 8.11(d, 1H), 7.65(d, 1H), 7.55(d, 2H), 7.43(m, 1H), 7.31(m, 1H), 7.18(m, 2H), 6.68-6.74(m, 2H), 6.50-6.56(m, 2H) , 4.11(s, 1H), 1.68(s, 6H)。
7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]之合成
將5 g（13.7 mmol）的N-(2-溴苯基)-9,9-二甲基-9H-芴-2-胺和100 ml的THF的混合物在乾冰浴中冷卻，之後滴加8.2 ml的正丁基鋰（2.5 M溶於己烷，20.6 mmol），然後在乾冰浴中攪拌1小時。之後，滴加2.9 g溶於20 ml THF的4H-環戊[1,2-b:5,4-b']-二噻吩-4-酮，並在室溫下攪拌1小時，然後在70℃加熱12小時。減壓移除生成混合物中的溶劑。隨後，加入1.58 g的甲磺酸和50 ml的CHCl 3，然後在60℃攪拌2小時。反應完成後，使混合物冷卻至室溫並移除溶劑。以管柱層析純化粗產物，得到1.64 g的棕色固體（26％）。 1H NMR (CDCl 3, 400 MHz)：化學位移(ppm) 8.05(d, 1H), 7.61(m, 3H), 7.44(d, 2H), 7.27-7.33(m, 1H), 6.92-7.01(m, 4H), 6.64-6.68(m, 2H),6.48(d, H),4.13(s, 1H), 1.66(s, 6H)。
化合物C3之合成
將1 g（2.18 mmol）的7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]、0.93 g（2.39 mmol）的2-(3-溴苯基)-4,6-二苯基-1,3,5-三嗪、0.04 g（0.04 mmol）的Pd 2(dba) 3、及30 ml的鄰二甲苯的混合物除氣並置於氮氣下，然後在120℃加熱3小時。反應完成後，使混合物冷卻至室溫。隨後，將50 ml的甲醇加到混合物中，然後過濾並用甲醇洗滌，得到1.13 g的黃色固體（68％）。 1H NMR (CDCl 3, 400 MHz)：化學位移(ppm) 8.35(d, 4H), 7.93(d, 1H),7.69(d, 1H), 7.52-7.59(m, 7H), 7.34-7.42(m, 6H), 7.26(m, 1H), 6.96-7.02(m, 3H), 6.86 (d, 1H), 6.61-6.67(d, 3H),6.52(d, 1H),1.69(s, 6H)。MS(m/z , EI +)：766.7。 實施例2
化合物C12之合成
使用與實施例1相同的合成程序，不同之處僅在於使用12-(3-溴苯基)-4,6-二苯基嘧啶取代2-(3-溴苯基)-4,6-二苯基-1,3,5-三嗪，得到化合物5'-(3-(4,6-二苯基嘧啶-2-基)苯基)-7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]。MS(m/z,EI +)：765.6。 實施例3
化合物C5之合成
使用與實施例1相同的合成程序，不同之處僅在於使用9-(3-溴苯基)-9H-咔唑取代2-(3-溴苯基)-4,6-二苯基-1,3,5-三嗪，得到所需化合物5'-(3-(9H- 咔唑-9-基)苯基)-7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]。MS(m/z,EI +)：700.6。 實施例4
化合物C7之合成
使用與實施例1相同的合成程序，不同之處僅在於使用2-溴二苯并[b,d]噻吩取代2-(3-溴苯基)-4,6-二苯基-1,3,5-三嗪，得到所需化合物5'-(二苯并[b,d]噻吩-2-基)-7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]。MS(m/z,EI +)：641.5。 實施例5
化合物C8之合成
使用與實施例1相同的合成程序，不同之處僅在於使用2-溴-9,9-二甲基-9H-芴取代2-(3-溴苯基)-4,6-二苯基-1,3,5-三嗪，得到所需化合物5'-(9,9-二甲基-9H-芴-2-基)-7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]。MS(m/z,EI +)：651.6。 實施例6
化合物C6之合成
使用與實施例1相同的合成程序，不同之處僅在於使用6-溴-9,9'-二苯基-9H,9'H-3,3'-雙咔唑取代2-(3-溴苯基)-4,6-二苯基-1,3,5-三嗪，得到所需化合物5'-(9,9'-二苯基-9H,9'H-[3,3'-雙咔唑-6-基)-7',7'-二甲基-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]。MS(m/z,EI +)：942.1。 實施例7
化合物C1之合成
使用與實施例1相同的合成程序，不同之處僅在於使用1-溴萘取代2-(3-溴苯基)-4,6-二苯基-1,3,5-三嗪，得到所需化合物7',7'-二甲基-5'-(萘-1-基)-5',7'-二氫螺[環戊[1,2-b:5,4-b']二噻吩-4,13'-茚并[1,2-b]吖啶]。MS(m/z,EI +)：585.6。 生產有機電激發光元件之一般方法
提供阻值為9~12歐姆/平方（ohm/square）及厚度為120~160 nm的銦錫氧化物塗層玻璃（以下稱為ITO基板），並在超音波浴（例如洗滌劑、去離子水）中進行多步驟清洗。在氣相沉積有機層之前，藉由紫外光（UV）和臭氧進一步處理清洗過的ITO基板。ITO基板的所有預處理製程皆在潔淨室（100級）內進行。
在高真空設備下（10 -7Torr）利用電阻加熱的石英舟以氣相沉積將這些有機層依序塗佈到ITO基板上。藉助石英晶體監視器來精確監控或設定各層的厚度和氣相沉積速率（0.1~0.3 nm/sec）。如上所述，還可以使個別層包含不只一種化合物，即通常摻雜有摻雜材料的主體材料。此可藉由來自兩個或更多個來源的共氣相沉積成功地實現，表示本發明的多雜芳族化合物是熱穩定的。
使用二吡嗪并[2,3-f:2',3'-h]喹喔啉-2,3,6,7,10,11-六腈（dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile）（HAT-CN）形成有機EL元件的電洞注入層。使用N,N-雙(萘-1-基)-N,N-雙(苯基)-聯苯胺（NPB）形成電洞傳輸層。使用雙(2-苯基吡啶)(2,4-二苯基吡啶)-銥（III）（D1）作為磷光摻雜劑，並使用3-(9,9-二甲基吖啶-10(9H)-基)-9H-呫噸-9-酮（D2）作為螢光摻雜劑。使用4-(10,10-二甲基-10H-茚并[2,1-b]三亞苯-13-基)二苯并[b,d]噻吩（H1）作為磷光主體材料，並且使用二苯并[b,d]噻吩-2,8-二基雙(二苯基氧化膦)（H2）作為螢光主體材料和TADF主體材料。使用2-(10,10-二甲基-10H-茚并[2,1-b]三亞苯-13-基)-9-苯基-1,10-啡啉（ET1）作為電子傳輸材料。使用化合物C12作為螢光摻雜材料來與化合物D2比較，並且使用化合物C3作為TADF摻雜材料來與化合物A比較。使用化合物C5和C7作為磷光主體材料來與化合物H1比較。將化合物C8用作螢光主體材料與化合物H2進行比較，並將化合物C6用作TADF主體材料與化合物H2進行比較。使用化合物C1作為電子傳輸材料來與化合物ET1進行比較。本發明中用於製作對照和例示性有機EL元件的傳統OLED材料和本發明的例示性多雜芳族化合物之化學結構如下所示： Compound A Compound C3 Compound C12 Compound C5 Compound C7 Compound C8 Compound C6 Compound C1 。
有機EL元件一般包含透過熱蒸發形成為陰極的低功函數金屬，例如Al、Mg、Ca、Li及K，且該低功函數金屬可有助於電子從陰極注入電子傳輸層。另外，在陰極與電子傳輸層之間引入薄膜電子注入層，用於降低電子注入阻障並改善有機EL元件的性能。習知的電洞注入層材料為具有低功函數的金屬鹵化物或金屬氧化物，例如：LiF、LiQ（如下所示）、MgO、或Li 2O。另一方面，在製作有機EL元件之後，透過使用PR650光譜掃描光譜儀量測EL光譜及CIE座標。此外，使用吉時利（Keithley）2400可程式化電壓電流源測得電流/電壓、亮度/電壓、及效率/電壓特性。在室溫（約25℃）及大氣壓下操作上述設備。 實施例7
使用與上述一般方法類似的程序製作發射綠光並具有以下如圖1所示元件結構的有機EL元件：ITO/HAT-CN（20 nm）/NPB（130 nm）/摻雜有摻雜劑的主體（30 nm）/ETM/LiQ/Al（160 nm）。將此等有機EL元件的I-V-B（在1000 尼特下）測試報告總結於下表1。 表1
摻雜劑（%） 主體 ETM 電壓（V） 效率（cd/A）
D1 (8%) H1 ET1 4.9 14
D1 (8%) C5 ET1 4.6 20
D1 (8%) C7 ET1 4.8 16
D2 (20%) H2 ET1 5.1 11
D2 (20%) C8 ET1 4.7 13
C12 (20%) H2 ET1 4.9 15
A (20%) H2 ET1 5 10
A (20%) C6 ET1 4.8 13
C3 (20%) H2 ET1 4.7 22
C3 (20%) H2 C1 4.5 25
根據上述有機EL元件的測試報告總結，顯而易見的是，用作有機EL元件的螢光或TADF摻雜材料、磷光、螢光或TADF主體材料、或電子傳輸材料的式（1）多雜芳族化合物表現出比現有技術的材料更佳的性能。具體來說，本發明使用式（1）的多雜芳族化合物作為摻雜材料、主體材料或電子傳輸材料來與主體材料H2或摻雜材料D1、D2或化合物A搭配的有機EL元件可具有更低的功耗和更高的發光效率。
總而言之，本發明揭示了多雜芳族化合物，該多雜芳族化合物可在有機EL元件中用作發光層的主體材料、螢光摻雜材料、熱活化延遲螢光主體材料或熱活化延遲螢光摻雜材料、或電子傳輸材料。所述的多雜芳族化合物係由下式（1）表示： 式（1） 其中X為O、S、或Se；n和p各自獨立為0至2的整數；L表示以下式（2）： 式（2） 並且B表示以下式（3）： 式（3） 其中m為0至4的整數；Y為O、S、Se、CR 6R 7、NR 8或SiR 9R 10；以及R 1至R 11係獨立選自由氫原子、鹵化物、具有1至60個碳原子的經取代或未經取代烷基、具有6至60個碳原子的經取代或未經取代芳基、具有6至60個碳原子的經取代或未經取代芳烷基、具有3至60個碳原子的經取代或未經取代雜芳基、及具有6至60個碳原子的經取代或未經取代芳胺基所組成之群組。
根據上述教示顯然可以作出許多的修改及變化。因此，應當瞭解的是，在隨附申請專利範圍的範圍內，可以以本文具體描述的方式以外的其他方式來實施本發明。雖然，本文中已說明並描述了具體實施例，但對於所屬技術領域中具有通常知識者來說，顯而易見的是可以在不偏離欲單獨由隨附申請專利範圍限制的情況下對本發明作出許多修改。
6 透明電極
7 電洞注入層
8 電洞傳輸層
9 發光層
10 電洞阻擋層
11 電子傳輸層
12 電子注入層
13 金屬電極
圖1顯示本發明的有機EL元件的一個實施例。在該元件中，電洞注入層7沉積在透明電極6上，電洞傳輸層8沉積在電洞注入層7上，螢光或磷光發光層9沉積在電洞傳輸層8上，電洞阻擋層10沉積在發光層9上，電子傳輸層11沉積在電洞阻擋層10上，電子注入層12沉積在電子傳輸層11上，以及金屬電極13沉積在電子注入層12上。

Claims (11)

  1. 一種多雜芳族化合物，係由以下式(4)至式(6)、式(8)至式(9)中之一式表示：：
    Figure TWI662040B_C0001
    Figure TWI662040B_C0002
    Figure TWI662040B_C0003
    Figure TWI662040B_C0004
    Figure TWI662040B_C0005
    其中X為O、S、或Se；式(4)的Y為O、S、或Se；式(5)的Y為O、S、Se、CR6R7、NR8、或SiR9R10；式(6)的Y為O、S、Se、或NR8；式(8)的Y為CR6R7、NR8、或SiR9R10；式(9)的Y為O、S、或Se；n和p各自獨立為0至2的整數；L表示以下式(2)：
    Figure TWI662040B_C0006
    其中m為0至4的整數；以及R1至R11係獨立選自由氫原子、鹵化物、具有1至60個碳原子的經取代或未經取代烷基、具有6至60個碳原子的經取代或未經取代芳基、具有6至60個碳原子的經取代或未經取代芳烷基、具有3至60個碳原子的經取代或未經取代雜芳基、及具有6至60個碳原子的經取代或未經取代芳胺基所組成之群組。
  2. 如請求項1所述之多雜芳族化合物，其中R8或R11表示以下取代基中之一取代基：
    Figure TWI662040B_C0007
    Figure TWI662040B_C0008
    Figure TWI662040B_C0009
    Figure TWI662040B_C0010
    Figure TWI662040B_C0011
    Figure TWI662040B_C0012
    Figure TWI662040B_C0013
  3. 如請求項1所述之多雜芳族化合物，其中該多雜芳族化合物為以下化合物中之一化合物：
    Figure TWI662040B_C0014
    Figure TWI662040B_C0015
    Figure TWI662040B_C0016
    Figure TWI662040B_C0017
    Figure TWI662040B_C0018
    Figure TWI662040B_C0019
    Figure TWI662040B_C0020
    Figure TWI662040B_C0021
    Figure TWI662040B_C0022
    Figure TWI662040B_C0023
    Figure TWI662040B_C0024
    Figure TWI662040B_C0025
    Figure TWI662040B_C0026
    Figure TWI662040B_C0027
    Figure TWI662040B_C0028
    Figure TWI662040B_C0029
    Figure TWI662040B_C0030
    Figure TWI662040B_C0031
    Figure TWI662040B_C0032
    Figure TWI662040B_C0033
    Figure TWI662040B_C0034
    Figure TWI662040B_C0035
    Figure TWI662040B_C0036
    Figure TWI662040B_C0037
    Figure TWI662040B_C0038
    Figure TWI662040B_C0039
    Figure TWI662040B_C0040
    Figure TWI662040B_C0041
    Figure TWI662040B_C0042
    Figure TWI662040B_C0043
  4. 一種有機電激發光元件，包含由陰極和陽極組成的一電極對、及在該電極對之間的一發光層及一個或更多個有機薄膜層，其中該發光層和該有機薄膜層中之至少一者包含如請求項1所述之多雜芳族化合物。
  5. 如請求項4所述之有機電激發光元件，其中該多雜芳族化合物在該有機電激發光元件中用作該發光層的主體材料。
  6. 如請求項4所述之有機電激發光元件，其中該多雜芳族化合物在該有機電激發光元件中用作該發光層的螢光摻雜材料。
  7. 如請求項4所述之有機電激發光元件，其中該多雜芳族化合物在該有機電激發光元件中用作該發光層的熱活化延遲螢光主體材料。
  8. 如請求項4所述之有機電激發光元件，其中該多雜芳族化合物在該有機電激發光元件中用作該發光層的熱活化延遲螢光摻雜材料。
  9. 如請求項4所述之有機電激發光元件，其中該多雜芳族化合物的該有機薄膜層為一電子傳輸層。
  10. 如請求項4所述之有機電激發光元件，其中該有機電激發光元件為一發光面板。
  11. 如請求項4所述之有機電激發光元件，其中該有機電激發光元件為一背光面板。
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