TWI661323B - 模擬方法，模擬程式，製程控制系統，模擬器，製程設計方法及光罩設計方法 - Google Patents

模擬方法，模擬程式，製程控制系統，模擬器，製程設計方法及光罩設計方法 Download PDF

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Publication number
TWI661323B
TWI661323B TW103136187A TW103136187A TWI661323B TW I661323 B TWI661323 B TW I661323B TW 103136187 A TW103136187 A TW 103136187A TW 103136187 A TW103136187 A TW 103136187A TW I661323 B TWI661323 B TW I661323B
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TW
Taiwan
Prior art keywords
wafer
mask
etching
aperture ratio
rate
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TW103136187A
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English (en)
Chinese (zh)
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TW201520803A (zh
Inventor
Nobuyuki Kuboi
久保井信行
Takashi Kinoshita
木下隆
Original Assignee
Sony Semiconductor Solutions Corporation
索尼半導體解決方案公司
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Application filed by Sony Semiconductor Solutions Corporation, 索尼半導體解決方案公司 filed Critical Sony Semiconductor Solutions Corporation
Publication of TW201520803A publication Critical patent/TW201520803A/zh
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Publication of TWI661323B publication Critical patent/TWI661323B/zh

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Classifications

    • H10P74/23—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H10P50/242—
    • H10P74/203—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103136187A 2013-11-28 2014-10-20 模擬方法，模擬程式，製程控制系統，模擬器，製程設計方法及光罩設計方法 TWI661323B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013245647A JP6173889B2 (ja) 2013-11-28 2013-11-28 シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法
JP2013-245647 2013-11-28

Publications (2)

Publication Number Publication Date
TW201520803A TW201520803A (zh) 2015-06-01
TWI661323B true TWI661323B (zh) 2019-06-01

Family

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Family Applications (1)

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TW103136187A TWI661323B (zh) 2013-11-28 2014-10-20 模擬方法，模擬程式，製程控制系統，模擬器，製程設計方法及光罩設計方法

Country Status (3)

Country Link
US (1) US9431310B2 (enExample)
JP (1) JP6173889B2 (enExample)
TW (1) TWI661323B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
US9865471B2 (en) * 2015-04-30 2018-01-09 Tokyo Electron Limited Etching method and etching apparatus
JP6516603B2 (ja) * 2015-04-30 2019-05-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US10534257B2 (en) * 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
WO2019162346A1 (en) * 2018-02-23 2019-08-29 Asml Netherlands B.V. Methods for training machine learning model for computation lithography
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
KR102708927B1 (ko) 2018-04-10 2024-09-23 램 리써치 코포레이션 피처들을 특징화하기 위한 머신 러닝의 광학 계측
CN112005347B (zh) 2018-04-10 2025-04-04 朗姆研究公司 抗蚀剂和蚀刻建模
CN112640037A (zh) 2018-09-03 2021-04-09 首选网络株式会社 学习装置、推理装置、学习模型的生成方法及推理方法
KR102541743B1 (ko) 2018-09-03 2023-06-13 가부시키가이샤 프리퍼드 네트웍스 학습 장치, 추론 장치 및 학습 완료 모델
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
EP3850628B1 (en) * 2019-01-28 2023-10-18 Yangtze Memory Technologies Co., Ltd. Systems and methods for designing dummy patterns

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030015660A1 (en) * 2001-07-19 2003-01-23 Chie Shishido Method and system for monitoring a semiconductor device manufacturing process
US20030230551A1 (en) * 2002-06-14 2003-12-18 Akira Kagoshima Etching system and etching method
US7363099B2 (en) * 2002-06-07 2008-04-22 Cadence Design Systems, Inc. Integrated circuit metrology
US20110082577A1 (en) * 2009-08-24 2011-04-07 Sony Corporation Shape simulation apparatus, shape simulation program, semiconductor production apparatus, and semiconductor device production method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5050830B2 (ja) * 2007-12-19 2012-10-17 ソニー株式会社 ドライエッチング装置および半導体装置の製造方法
JP5732843B2 (ja) * 2010-12-21 2015-06-10 ソニー株式会社 シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030015660A1 (en) * 2001-07-19 2003-01-23 Chie Shishido Method and system for monitoring a semiconductor device manufacturing process
US7363099B2 (en) * 2002-06-07 2008-04-22 Cadence Design Systems, Inc. Integrated circuit metrology
US20030230551A1 (en) * 2002-06-14 2003-12-18 Akira Kagoshima Etching system and etching method
US20110082577A1 (en) * 2009-08-24 2011-04-07 Sony Corporation Shape simulation apparatus, shape simulation program, semiconductor production apparatus, and semiconductor device production method

Also Published As

Publication number Publication date
US20150149970A1 (en) 2015-05-28
TW201520803A (zh) 2015-06-01
US9431310B2 (en) 2016-08-30
JP6173889B2 (ja) 2017-08-02
JP2015103769A (ja) 2015-06-04

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