TWI660530B - 有機薄膜電晶體及其製造方法 - Google Patents

有機薄膜電晶體及其製造方法 Download PDF

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TWI660530B
TWI660530B TW104106566A TW104106566A TWI660530B TW I660530 B TWI660530 B TW I660530B TW 104106566 A TW104106566 A TW 104106566A TW 104106566 A TW104106566 A TW 104106566A TW I660530 B TWI660530 B TW I660530B
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group
general formula
atom
represented
resin
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TW104106566A
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TW201535817A (zh
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滝沢裕雄
新居輝樹
米久田康智
平野修史
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日商富士軟片股份有限公司
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
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    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
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    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2500/00—Characteristics or properties of obtained polyolefins; Use thereof
    • C08F2500/02—Low molecular weight, e.g. <100,000 Da.
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
TW104106566A 2014-03-03 2015-03-03 有機薄膜電晶體及其製造方法 TWI660530B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-040903 2014-03-03
JP2014040903A JP6140626B2 (ja) 2014-03-03 2014-03-03 有機薄膜トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
TW201535817A TW201535817A (zh) 2015-09-16
TWI660530B true TWI660530B (zh) 2019-05-21

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TW104106566A TWI660530B (zh) 2014-03-03 2015-03-03 有機薄膜電晶體及其製造方法

Country Status (7)

Country Link
US (1) US9799832B2 (ko)
EP (1) EP3116031A4 (ko)
JP (1) JP6140626B2 (ko)
KR (1) KR101917939B1 (ko)
CN (1) CN106062965B (ko)
TW (1) TWI660530B (ko)
WO (1) WO2015133375A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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JPWO2017038948A1 (ja) * 2015-09-02 2018-06-28 富士フイルム株式会社 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機半導体組成物、有機半導体膜および有機半導体膜の製造方法
JP6733157B2 (ja) * 2015-11-27 2020-07-29 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
GB2550145A (en) * 2016-05-10 2017-11-15 Sumitomo Chemical Co Phase separation for enhanced carrier mobility in OTFT devices
CN105845721B (zh) * 2016-05-20 2019-02-22 京东方科技集团股份有限公司 一种顶栅结构及其制备方法、薄膜晶体管、阵列基板以及显示设备
KR102573853B1 (ko) 2016-09-20 2023-09-01 삼성디스플레이 주식회사 발광 표시 장치
CN106883248A (zh) * 2017-03-22 2017-06-23 中国科学院大学 一种基于稠环呋喃的小分子材料制备方法及其应用
CN106981478A (zh) * 2017-04-07 2017-07-25 京东方科技集团股份有限公司 顶栅型薄膜晶体管及其制作方法、阵列基板、显示面板
JP7206912B2 (ja) * 2017-09-29 2023-01-18 東レ株式会社 電界効果型トランジスタ、その製造方法、それを用いた無線通信装置および商品タグ
CN108766629B (zh) * 2018-05-29 2020-11-24 重庆大学 一种提高柔性透明导电薄膜密着性的方法
KR102224346B1 (ko) * 2019-07-11 2021-03-05 한양대학교 산학협력단 유무기 하이브리드층, 이 층을 구비하는 유무기 적층체, 및 이 적층체를 가스 배리어로 구비하는 유기전자소자
JP2021024933A (ja) * 2019-08-02 2021-02-22 三菱ケミカル株式会社 共重合体、硬化性重合体組成物、硬化物、積層体
CN115805103B (zh) * 2021-09-14 2024-04-09 万华化学集团股份有限公司 一种失活钛硅分子筛的再生方法

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US20100044684A1 (en) * 2006-06-29 2010-02-25 Cambridge Enterprise Limited Blended polymer fets
US20120261648A1 (en) * 2011-04-18 2012-10-18 Xerox Corporation Semiconductor composition
US20120298974A1 (en) * 2011-05-27 2012-11-29 Postech Academy-Industry Foundation Simplified organic electronic device employing polymeric anode with high work function

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GB0028867D0 (en) 2000-11-28 2001-01-10 Avecia Ltd Field effect translators,methods for the manufacture thereof and materials therefor
GB0318817D0 (en) * 2003-08-11 2003-09-10 Univ Cambridge Tech Method of making a polymer device
GB2449023B (en) * 2006-01-21 2011-06-15 Merck Patent Gmbh Electronic short channel device comprising an organic semiconductor formulation
EP2232606A1 (en) * 2007-12-17 2010-09-29 3M Innovative Properties Company Solution processable organic semiconductors based on anthracene
JP5636626B2 (ja) * 2007-12-27 2014-12-10 ソニー株式会社 半導体薄膜の形成方法および薄膜半導体装置の製造方法
WO2009116373A1 (ja) * 2008-03-18 2009-09-24 東レ株式会社 ゲート絶縁材料、ゲート絶縁膜、および有機電界効果型トランジスタ
JP4730623B2 (ja) * 2008-07-24 2011-07-20 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
JP5896863B2 (ja) * 2012-08-27 2016-03-30 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
CN103151461A (zh) * 2013-02-27 2013-06-12 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法和制备装置

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20100044684A1 (en) * 2006-06-29 2010-02-25 Cambridge Enterprise Limited Blended polymer fets
US20120261648A1 (en) * 2011-04-18 2012-10-18 Xerox Corporation Semiconductor composition
US20120298974A1 (en) * 2011-05-27 2012-11-29 Postech Academy-Industry Foundation Simplified organic electronic device employing polymeric anode with high work function

Also Published As

Publication number Publication date
EP3116031A4 (en) 2017-03-15
WO2015133375A1 (ja) 2015-09-11
KR20160127787A (ko) 2016-11-04
US9799832B2 (en) 2017-10-24
EP3116031A1 (en) 2017-01-11
CN106062965B (zh) 2019-04-26
TW201535817A (zh) 2015-09-16
US20160372662A1 (en) 2016-12-22
CN106062965A (zh) 2016-10-26
KR101917939B1 (ko) 2018-11-12
JP2015167164A (ja) 2015-09-24
JP6140626B2 (ja) 2017-05-31

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