TWI660017B - 用於鈷化學機械拋光(cmp)之替代氧化劑 - Google Patents

用於鈷化學機械拋光(cmp)之替代氧化劑 Download PDF

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Publication number
TWI660017B
TWI660017B TW106123275A TW106123275A TWI660017B TW I660017 B TWI660017 B TW I660017B TW 106123275 A TW106123275 A TW 106123275A TW 106123275 A TW106123275 A TW 106123275A TW I660017 B TWI660017 B TW I660017B
Authority
TW
Taiwan
Prior art keywords
polishing composition
compound
cobalt
acid
oxidant
Prior art date
Application number
TW106123275A
Other languages
English (en)
Chinese (zh)
Other versions
TW201807119A (zh
Inventor
史蒂芬 卡夫特
菲利普 Ｗ 卡特
安德魯 R 渥夫
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201807119A publication Critical patent/TW201807119A/zh
Application granted granted Critical
Publication of TWI660017B publication Critical patent/TWI660017B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW106123275A 2016-07-14 2017-07-12 用於鈷化學機械拋光(cmp)之替代氧化劑 TWI660017B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662362222P 2016-07-14 2016-07-14
US62/362,222 2016-07-14

Publications (2)

Publication Number Publication Date
TW201807119A TW201807119A (zh) 2018-03-01
TWI660017B true TWI660017B (zh) 2019-05-21

Family

ID=60942463

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106123275A TWI660017B (zh) 2016-07-14 2017-07-12 用於鈷化學機械拋光(cmp)之替代氧化劑

Country Status (7)

Country Link
US (1) US11851584B2 (cg-RX-API-DMAC7.html)
EP (1) EP3484971B1 (cg-RX-API-DMAC7.html)
JP (2) JP7253924B2 (cg-RX-API-DMAC7.html)
KR (3) KR20230014887A (cg-RX-API-DMAC7.html)
CN (1) CN109415599B (cg-RX-API-DMAC7.html)
TW (1) TWI660017B (cg-RX-API-DMAC7.html)
WO (1) WO2018013847A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066786A1 (ja) * 2018-09-28 2020-04-02 花王株式会社 酸化珪素膜用研磨液組成物
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
WO2021076352A1 (en) * 2019-10-15 2021-04-22 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
JP2022061016A (ja) * 2020-10-05 2022-04-15 花王株式会社 酸化珪素膜用研磨液組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201343905A (zh) * 2012-02-15 2013-11-01 Advanced Tech Materials 利用後段化學機械拋光移除之組成物及其使用方法
TW201603945A (zh) * 2014-07-25 2016-02-01 氣體產品及化學品股份公司 含鈷之基材的化學機械硏磨

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US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
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US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
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TW201343905A (zh) * 2012-02-15 2013-11-01 Advanced Tech Materials 利用後段化學機械拋光移除之組成物及其使用方法
TW201603945A (zh) * 2014-07-25 2016-02-01 氣體產品及化學品股份公司 含鈷之基材的化學機械硏磨

Also Published As

Publication number Publication date
CN109415599B (zh) 2022-09-27
EP3484971B1 (en) 2025-08-27
WO2018013847A1 (en) 2018-01-18
US11851584B2 (en) 2023-12-26
KR20230014887A (ko) 2023-01-30
CN109415599A (zh) 2019-03-01
TW201807119A (zh) 2018-03-01
JP2022097502A (ja) 2022-06-30
KR20190018751A (ko) 2019-02-25
KR20250005498A (ko) 2025-01-09
JP7253924B2 (ja) 2023-04-07
EP3484971A1 (en) 2019-05-22
EP3484971A4 (en) 2020-02-26
US20180016469A1 (en) 2018-01-18
JP2019527468A (ja) 2019-09-26

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