TWI658335B - 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 - Google Patents
液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 Download PDFInfo
- Publication number
- TWI658335B TWI658335B TW106132812A TW106132812A TWI658335B TW I658335 B TWI658335 B TW I658335B TW 106132812 A TW106132812 A TW 106132812A TW 106132812 A TW106132812 A TW 106132812A TW I658335 B TWI658335 B TW I658335B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- liquid immersion
- liquid
- patent application
- exposure
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 295
- 238000007654 immersion Methods 0.000 title claims abstract description 164
- 238000000034 method Methods 0.000 title claims description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 176
- 238000011084 recovery Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims description 322
- 230000033001 locomotion Effects 0.000 claims description 60
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 9
- 239000005871 repellent Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 description 36
- 238000010586 diagram Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 18
- 238000005286 illumination Methods 0.000 description 15
- 230000001133 acceleration Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 8
- 230000001629 suppression Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261622235P | 2012-04-10 | 2012-04-10 | |
| US61/622,235 | 2012-04-10 | ||
| US13/793,667 US9323160B2 (en) | 2012-04-10 | 2013-03-11 | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US13/793,667 | 2013-03-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201804261A TW201804261A (zh) | 2018-02-01 |
| TWI658335B true TWI658335B (zh) | 2019-05-01 |
Family
ID=49292050
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106132812A TWI658335B (zh) | 2012-04-10 | 2013-03-19 | 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 |
| TW108109504A TWI698720B (zh) | 2012-04-10 | 2013-03-19 | 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 |
| TW102109578A TWI611270B (zh) | 2012-04-10 | 2013-03-19 | 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108109504A TWI698720B (zh) | 2012-04-10 | 2013-03-19 | 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 |
| TW102109578A TWI611270B (zh) | 2012-04-10 | 2013-03-19 | 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9323160B2 (enExample) |
| EP (1) | EP2836875B1 (enExample) |
| JP (3) | JP6245179B2 (enExample) |
| KR (1) | KR102158968B1 (enExample) |
| CN (2) | CN107728434B (enExample) |
| HK (2) | HK1204682A1 (enExample) |
| TW (3) | TWI658335B (enExample) |
| WO (1) | WO2013153939A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2009692A (en) | 2011-12-07 | 2013-06-10 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US9823580B2 (en) * | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| JP6369472B2 (ja) | 2013-10-08 | 2018-08-08 | 株式会社ニコン | 液浸部材、露光装置及び露光方法、並びにデバイス製造方法 |
| KR102206979B1 (ko) * | 2016-09-12 | 2021-01-25 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치를 위한 유체 처리 구조물 |
| CN110268334B (zh) | 2017-02-03 | 2024-10-29 | Asml荷兰有限公司 | 曝光设备 |
| CN109856922B (zh) * | 2017-11-30 | 2020-11-13 | 上海微电子装备（集团）股份有限公司 | 浸没流体控制装置、浸没式光刻系统与回收控制方法 |
| CN111480118B (zh) | 2017-12-15 | 2024-06-25 | Asml荷兰有限公司 | 流体处置结构、光刻设备、以及使用流体处置结构的方法 |
| JP6575629B2 (ja) * | 2018-04-04 | 2019-09-18 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| CN112650028B (zh) * | 2020-12-25 | 2024-02-09 | 浙江启尔机电技术有限公司 | 一种改善浸没流场压力特性的浸液供给回收装置 |
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| TW200727087A (en) * | 2005-11-16 | 2007-07-16 | Asml Netherlands Bv | Lithographic apparatus |
| TW200947145A (en) * | 2008-03-27 | 2009-11-16 | Nikon Corp | Immersion system, exposure apparatus, exposing method, and device fabricating method |
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| DE69738910D1 (de) | 1996-11-28 | 2008-09-25 | Nikon Corp | Ausrichtvorrichtung und belichtungsverfahren |
| DE69829614T2 (de) | 1997-03-10 | 2006-03-09 | Asml Netherlands B.V. | Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern |
| US6897963B1 (en) | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| US6452292B1 (en) | 2000-06-26 | 2002-09-17 | Nikon Corporation | Planar motor with linear coil arrays |
| JP4714403B2 (ja) | 2001-02-27 | 2011-06-29 | エーエスエムエル ユーエス，インコーポレイテッド | デュアルレチクルイメージを露光する方法および装置 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| CN100462844C (zh) | 2002-08-23 | 2009-02-18 | 株式会社尼康 | 投影光学系统、微影方法、曝光装置及使用此装置的方法 |
| KR20110104084A (ko) * | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| WO2005024517A2 (en) | 2003-09-03 | 2005-03-17 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| TWI361450B (en) * | 2003-10-31 | 2012-04-01 | Nikon Corp | Platen, stage device, exposure device and exposure method |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| WO2005119742A1 (ja) * | 2004-06-04 | 2005-12-15 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| KR101119814B1 (ko) * | 2004-06-07 | 2012-03-06 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치 및 노광 방법 |
| KR101511876B1 (ko) | 2004-06-09 | 2015-04-13 | 가부시키가이샤 니콘 | 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 |
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| JP4844186B2 (ja) | 2005-03-18 | 2011-12-28 | 株式会社ニコン | プレート部材、基板保持装置、露光装置及び露光方法、並びにデバイス製造方法 |
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| JP2007335662A (ja) * | 2006-06-15 | 2007-12-27 | Canon Inc | 露光装置 |
| US8004651B2 (en) | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| US8068209B2 (en) | 2007-03-23 | 2011-11-29 | Nikon Corporation | Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool |
| US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| US8300207B2 (en) * | 2007-05-17 | 2012-10-30 | Nikon Corporation | Exposure apparatus, immersion system, exposing method, and device fabricating method |
| JP2009088037A (ja) * | 2007-09-28 | 2009-04-23 | Nikon Corp | 露光方法及びデバイス製造方法、並びに露光装置 |
| US8451425B2 (en) * | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
| US8610873B2 (en) | 2008-03-17 | 2013-12-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
| US8289497B2 (en) | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
| JP2011086804A (ja) * | 2009-10-16 | 2011-04-28 | Nikon Corp | 液浸部材、露光装置、露光方法、及びデバイス製造方法 |
| JP5232901B2 (ja) * | 2011-07-22 | 2013-07-10 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| NL2009271A (en) | 2011-09-15 | 2013-03-18 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| US9323160B2 (en) * | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
-
2013
- 2013-03-11 US US13/793,667 patent/US9323160B2/en active Active
- 2013-03-15 EP EP13718235.8A patent/EP2836875B1/en active Active
- 2013-03-15 KR KR1020147031457A patent/KR102158968B1/ko active Active
- 2013-03-15 WO PCT/JP2013/058454 patent/WO2013153939A1/en not_active Ceased
- 2013-03-15 CN CN201711011972.0A patent/CN107728434B/zh active Active
- 2013-03-15 HK HK15105266.9A patent/HK1204682A1/xx unknown
- 2013-03-15 CN CN201380029835.3A patent/CN104350425B/zh active Active
- 2013-03-15 JP JP2014550210A patent/JP6245179B2/ja active Active
- 2013-03-19 TW TW106132812A patent/TWI658335B/zh active
- 2013-03-19 TW TW108109504A patent/TWI698720B/zh active
- 2013-03-19 TW TW102109578A patent/TWI611270B/zh active
-
2015
- 2015-05-11 HK HK18105176.5A patent/HK1245901A1/zh unknown
-
2016
- 2016-04-11 US US15/095,500 patent/US9810999B2/en active Active
-
2017
- 2017-10-17 US US15/786,023 patent/US10139736B2/en active Active
- 2017-11-13 JP JP2017218195A patent/JP6569717B2/ja active Active
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2018
- 2018-10-24 US US16/169,210 patent/US10520828B2/en active Active
-
2019
- 2019-08-07 JP JP2019145187A patent/JP2019191613A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200727087A (en) * | 2005-11-16 | 2007-07-16 | Asml Netherlands Bv | Lithographic apparatus |
| TW200947145A (en) * | 2008-03-27 | 2009-11-16 | Nikon Corp | Immersion system, exposure apparatus, exposing method, and device fabricating method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015515738A (ja) | 2015-05-28 |
| HK1204090A1 (en) | 2015-11-06 |
| JP2019191613A (ja) | 2019-10-31 |
| HK1204682A1 (en) | 2015-11-27 |
| US20180039186A1 (en) | 2018-02-08 |
| TW201804261A (zh) | 2018-02-01 |
| EP2836875B1 (en) | 2020-11-18 |
| US20190056672A1 (en) | 2019-02-21 |
| EP2836875A1 (en) | 2015-02-18 |
| CN107728434B (zh) | 2020-04-03 |
| HK1245901A1 (zh) | 2018-08-31 |
| US9810999B2 (en) | 2017-11-07 |
| TWI611270B (zh) | 2018-01-11 |
| JP6245179B2 (ja) | 2017-12-13 |
| WO2013153939A1 (en) | 2013-10-17 |
| KR102158968B1 (ko) | 2020-09-23 |
| US9323160B2 (en) | 2016-04-26 |
| TW201344376A (zh) | 2013-11-01 |
| CN107728434A (zh) | 2018-02-23 |
| JP6569717B2 (ja) | 2019-09-04 |
| TW201928530A (zh) | 2019-07-16 |
| US10139736B2 (en) | 2018-11-27 |
| KR20150005603A (ko) | 2015-01-14 |
| TWI698720B (zh) | 2020-07-11 |
| JP2018022198A (ja) | 2018-02-08 |
| CN104350425A (zh) | 2015-02-11 |
| US20130265555A1 (en) | 2013-10-10 |
| CN104350425B (zh) | 2017-11-28 |
| US20160223915A1 (en) | 2016-08-04 |
| US10520828B2 (en) | 2019-12-31 |
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