TWI658162B - Vacuum evaporation device - Google Patents
Vacuum evaporation device Download PDFInfo
- Publication number
- TWI658162B TWI658162B TW106125452A TW106125452A TWI658162B TW I658162 B TWI658162 B TW I658162B TW 106125452 A TW106125452 A TW 106125452A TW 106125452 A TW106125452 A TW 106125452A TW I658162 B TWI658162 B TW I658162B
- Authority
- TW
- Taiwan
- Prior art keywords
- vapor deposition
- storage box
- substrate
- vacuum
- plated
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
提供可以將微粒的影響儘可能地減少的附著物減少方式的真空蒸鍍裝置。 本發明的真空蒸鍍裝置(DM),具備被配置於真空腔室(1)內的蒸鍍源(3),蒸鍍源是具有:收容蒸鍍物質(Vm)的收容箱(31)、及將蒸鍍物質加熱昇華或是氣化的加熱手段(33),在收容箱,設有被昇華或是氣化的蒸鍍物質的噴出部(32),噴出部是位於比真空腔室內的被鍍膜物(S)更垂直方向上方,噴出部,是具有對於垂直方向傾斜向下的噴出口(32b),使蒸鍍物質從該噴出口朝向被鍍膜物被噴出,收容箱是朝從被鍍膜物的端部分離的位置偏移地配置。Provided is a vacuum vapor deposition apparatus capable of reducing the influence of particles as much as possible on an attached matter. The vacuum vapor deposition device (DM) of the present invention includes a vapor deposition source (3) disposed in a vacuum chamber (1). The vapor deposition source includes a storage box (31) for storing a vapor deposition substance (Vm), And a heating means (33) for sublimating or vaporizing the vapor deposition material, the storage box is provided with a spraying part (32) for the vaporization material that is sublimated or vaporized, and the spraying part is located in the vacuum chamber The object to be plated (S) is more vertically upward, and the ejection part has an ejection port (32b) inclined obliquely downward to the vertical direction, so that the vapor deposition material is ejected from the ejection port toward the object to be plated, and the storage box is directed toward the object. The end portions of the plated object are separated from each other.
Description
[0001] 本發明,是有關真空蒸鍍裝置,更詳細的話,有關於設於收容箱的被昇華或是氣化的蒸鍍物質的噴出部是位於比真空腔室內的被鍍膜物更垂直方向上方的附著物減少方式者。[0001] The present invention relates to a vacuum evaporation device. More specifically, it relates to a sublimation or vaporization of a vapor deposition material ejection portion provided in a storage box in a direction that is more vertical than a coating object in a vacuum chamber. Those who reduce the attachments above.
[0002] 這種真空蒸鍍裝置已知例如專利文獻1的真空蒸鍍裝置。在此者中,在真空腔室的垂直方向下方,在該真空腔室的一方向設有將基板搬運的基板搬運手段,蒸鍍源是被面對配置在其上部。蒸鍍源,是將基板橫跨地設置,具有收容蒸鍍物質的筒狀的收容箱,在收容箱的下部中,蒸鍍物質的噴出口是沿著其長度方向由規定的間隔被列設。且,由加熱器將蒸鍍物質加熱並在收容箱內昇華或是氣化,藉由將此被昇華或是氣化者從噴出口朝向基板噴出,而對於基板被鍍膜。 [0003] 在此,在收容箱內被昇華或是氣化的蒸鍍物質,不是只有從噴出口朝向基板噴出,例如,也會附著、堆積在位於噴出口的周邊的收容箱的外表面部分。此情況,被附著、堆積的蒸鍍物質會成為微粒的發生源。因此,如上述習知例,以橫跨基板的方式設有收容箱的話,附著在收容箱的蒸鍍物質會成為微粒朝下方落下,附著在基板的問題會產生,此會導致製品成品率下降等的問題。 [先前技術文獻] [專利文獻] [0004] [專利文獻1] 日本專利第4216522號公報[0002] As such a vacuum evaporation apparatus, for example, a vacuum evaporation apparatus of Patent Document 1 is known. In this case, a substrate conveying means for conveying a substrate is provided below the vertical direction of the vacuum chamber in one direction of the vacuum chamber, and a vapor deposition source is disposed to face the upper portion. The vapor deposition source is a tube-shaped storage box for arranging substrates across the substrate. In the lower part of the storage box, the outlets of the vapor deposition materials are arranged at predetermined intervals along the longitudinal direction. . In addition, the vapor deposition substance is heated by the heater and sublimated or vaporized in the storage box, and the sublimated or vaporized person is ejected from the ejection port toward the substrate, and the substrate is coated. [0003] Here, the vapor deposition material that is sublimated or vaporized in the storage box is not only ejected from the ejection port toward the substrate, but also adheres to and accumulates on the outer surface portion of the storage box located around the ejection port. . In this case, the deposited and deposited material becomes a source of generation of particles. Therefore, as in the conventional example, if a storage box is provided across the substrate, the vapor deposition substance attached to the storage box will fall down as particles, and the problem of adhesion to the substrate will occur, which will cause the product yield to decrease. And other issues. [Prior Art Document] [Patent Document] [0004] [Patent Document 1] Japanese Patent No. 4216522
[本發明所欲解決的課題] [0005] 本發明,是鑑於以上的點,其課題是提供一種可以將微粒的影響儘可能地減少的附著物減少方式的真空蒸鍍裝置。 [用以解決課題的手段] [0006] 為了解決上述課題,本發明的真空蒸鍍裝置,具備被配置於真空腔室內的蒸鍍源,蒸鍍源是具有:收容蒸鍍物質的收容箱、及將蒸鍍物質加熱昇華或是氣化的加熱手段,是在收容箱設有將被昇華或是氣化的蒸鍍物質的蒸氣噴出的噴出部,噴出部是位於比真空腔室內的被鍍膜物更垂直方向上方,噴出部,是具有對於垂直方向傾斜向下的噴出口,使蒸鍍物質的蒸氣從該噴出口朝向被鍍膜物被噴出,收容箱是朝從被鍍膜物的端部分離的位置偏移地配置。 [0007] 依據本發明的話,在收容箱內將被昇華或是氣化的蒸鍍物質從噴出口朝向基板噴出時,蒸鍍物質也附著、堆積在收容箱的外表面,即使成為微粒的發生源朝下方落下,但因為收容箱是偏移地配置,所以附著在被鍍膜物成為困難。其結果,可以將微粒的影響儘可能地減少。 [0008] 在本發明中,前述加熱手段,是將前述收容箱加熱,藉由來自該收容箱的輻射熱將前述蒸鍍物質加熱較佳。由此,蒸鍍物質即使附著在收容箱的外表面,藉由收容箱本身被加熱,使蒸鍍物質再度被昇華或是氣化。因此,微粒的發生源形成困難,而有利。 [0009] 且具備與前述噴出口接近配置來防止來自該噴出口的蒸鍍物質的蒸氣朝向被鍍膜物被噴出的朝垂直方向往復動自如的活門板,活門板是朝從被鍍膜物的端部分離方向被偏移較佳。由此,附著在活門板的蒸鍍物質即使是成為微粒朝下方落下,可以難附著在被鍍膜物。 [0010] 且具有使被鍍膜物水平配置的保持部較佳。在此,水平,不是嚴格的水平的意思,而是實質上水平的意思。進一步,進一步具有將前述保持部以垂直方向的軸線為中心旋轉驅動的驅動手段較佳。由此,可以改善膜厚分布。 [0011] 又,被鍍膜物是在一方向長的基板,藉由前述移動手段將基板對於前述蒸鍍源朝真空腔室內的一方向一邊相對移動一邊鍍膜的情況,將對於蒸鍍源的基板的相對移動方向設成X軸方向,將與X軸方向垂直交叉的基板的寬度方向設成Y軸方向,在前述收容箱,噴出部是在Y軸方向由規定的間隔被列設較佳。此情況,依據基板的寬度,為了提高膜厚分布的均一性,將蒸鍍源在Y軸方向兩側分別配置也可以。[Problems to be Solved by the Present Invention] [0005] In view of the foregoing, the present invention has as its object to provide a vacuum vapor deposition apparatus that can reduce the effect of particles as much as possible by an attachment reduction method. [Means for Solving the Problems] 0006 [0006] In order to solve the above-mentioned problems, the vacuum vapor deposition device of the present invention includes a vapor deposition source disposed in a vacuum chamber. The vapor deposition source includes a storage box for storing a vapor deposition substance, And the heating means for sublimating or vaporizing the vapor deposition material is provided in the storage box with a spraying part that sprays the vapor of the vaporized vaporization material that is sublimated or vaporized, and the spraying part is a coating film located in a vacuum chamber. The object is more vertically upward, and the ejection part has an ejection port inclined downward with respect to the vertical direction. The vapor of the vapor deposition substance is ejected from the ejection port toward the object to be coated, and the storage box is separated from the end of the object to be coated. The position is offset. [0007] According to the present invention, when the sublimated or vaporized vapor deposition material is ejected from the ejection port toward the substrate in the storage box, the vapor deposition material also adheres to and accumulates on the outer surface of the storage box, even if particles are generated. The source falls downward, but because the storage box is disposed offset, it becomes difficult to attach to the object to be coated. As a result, the influence of fine particles can be reduced as much as possible. [0008] In the present invention, it is preferable that the heating means heats the storage box, and heats the vapor deposition material by radiant heat from the storage box. Thereby, even if the vapor deposition material adheres to the outer surface of the storage box, the storage box itself is heated, so that the vapor deposition material is sublimated or vaporized again. Therefore, it is difficult and advantageous to form a microparticle generation source. [0009] The valve plate is disposed close to the ejection port to prevent the vapor of the vapor deposition material from the ejection port from being ejected toward the object to be plated, and the valve plate can move back and forth in a vertical direction. The valve plate is toward the end from the object to be plated. It is preferable that the part separation direction is shifted. This makes it difficult for the vapor deposition substance adhering to the shutter plate to adhere to the object to be plated even if the particles fall downward. [0010] Furthermore, it is preferable to have a holding portion that horizontally arranges the object to be plated. Here, level does not mean strictly horizontal, but means substantially horizontal. Further, it is preferable to further include a driving means for rotationally driving the holding portion around an axis in the vertical direction. This can improve the film thickness distribution. [0011] In the case where the object to be coated is a substrate that is long in one direction, and the substrate is coated with respect to the vapor deposition source while being relatively moved in one direction in the vacuum chamber by the moving means, the substrate of the vapor deposition source will be coated. The relative movement direction of X is set to the X-axis direction, and the width direction of the substrate perpendicularly crossing the X-axis direction is set to the Y-axis direction. In the aforementioned storage box, the ejection sections are preferably arranged at predetermined intervals in the Y-axis direction. In this case, depending on the width of the substrate, in order to improve the uniformity of the film thickness distribution, the vapor deposition sources may be arranged on both sides in the Y-axis direction.
[0013] 以下,參照圖面,被鍍膜物為具有矩形的輪廓的規定厚度的玻璃基板(以下,稱為「基板S」),以在基板S的單面將規定的薄膜鍍膜的情況為例說明本發明的真空蒸鍍裝置的實施例。 [0014] 參照第1圖及第2圖,真空蒸鍍裝置DM是具備真空腔室1。在真空腔室1中,雖未特別圖示說明,但是透過排氣管連接有真空泵,可以抽真空保持在規定壓力(真空度)。且,在真空腔室1的垂直方向下部設有基板搬運裝置2。基板搬運裝置2,是具有在將作為鍍膜面的上面開放的狀態下將基板S保持的載體21,藉由圖外的驅動裝置而將載體21、進而基板S朝真空腔室1內的一方向由規定速度移動。基板搬運裝置2因為可以利用公知者,所以省略此以上的說明,但是在本實施例中,基板搬運裝置2,是對於後述的蒸鍍源朝真空腔室1內的一方向將基板S相對移動的移動手段。在以下,將對於蒸鍍源的基板S的相對移動方向設成X軸方向,將與X軸方向垂直交叉的基板S的寬度方向設成Y軸方向。 [0015] 在真空腔室1中,設有位於比基板S更垂直方向上方的蒸鍍源3。蒸鍍源3,是具有將對應欲鍍膜在基板S的薄膜而適宜選擇的蒸鍍物質Vm收容的收容箱31。此情況,收容箱31,是在Y軸方向長的長方體形狀者,在其下面的Y軸方向的角部中,由筒體構成的作為噴出部的噴出噴嘴32的複數根是在Y軸方向規定隔有間隔地被突設。此情況,噴出噴嘴32是使其噴嘴孔的孔軸32a對於垂直方向由規定的角度被傾斜,其先端的噴出口32b是成為垂直方向傾斜向下。此情況,孔軸32a的傾斜角,是考慮基板S的寬度、來自起因於蒸鍍物質Vm的噴出噴嘴32的蒸鍍物質Vm的噴出分布、和形成於基板S的薄膜的膜厚的均一性等被適宜設定。 [0016] 且作為加熱手段的電熱線33是被捲繞在包含噴出噴嘴32的收容箱31的周圍,藉由從圖外的電源通電,可以將收容箱31橫跨其整體大致均等地加熱。且,藉由將收容箱31加熱且藉由來自該收容箱31的輻射熱將容器31a內的蒸鍍物質Vm加熱,就可以將該蒸鍍物質Vm昇華或是氣化。又,雖未特別圖示說明,但是在收容箱31內設有分散板,可以將收容箱31加熱將其內部的蒸鍍物質Vm昇華或是氣化,可以將此被昇華或是氣化的蒸鍍物質Vm從各噴出噴嘴32大致均等地噴出。且,將收容箱31大致均等地加熱的方式不限定於上述者。進一步,不另外設置將容器31a內的蒸鍍物質Vm直接加熱的加熱手段也可以,例如,將作為別的加熱手段的電熱線捲繞在容器31a的周圍並通電,而將蒸鍍物質Vm藉由傳熱進行加熱也可以。 [0017] 如上述構成的收容箱31,是使噴出噴嘴32的噴出口32b朝從基板S的Y軸方向一端分離的位置被偏移配置。此情況,噴出口32b及基板S的Y軸方向一端之間的間隔DS,可考慮形成於基板S的薄膜的膜厚的均一性等被適宜設定。且,在真空腔室1內,具備與噴出噴嘴32的噴出口32b接近配置來防止來自該噴出口32b的蒸鍍物質的蒸氣朝向基板S被噴出的朝垂直方向往復動自如的活門板4。活門板4,是來自噴出噴嘴32的蒸鍍物質Vm的噴出成為穩定為止期間,朝圖中由虛線顯示的遮蔽位置移動,噴出若穩定的話,朝圖中由實線所示的噴出位置移動。在這些的兩位置之間將活門板4往復動的驅動手段,因為可以使用公知的構造者,所以在此省略說明。活門板4也朝從基板S的Y軸方向一端分離方向被偏移。活門板4的下端,是朝向收容箱31呈L字狀彎曲。 [0018] 依據以上的實施例的話,在收容箱31內將被昇華或是氣化的蒸鍍物質Vm從噴出口32b朝向基板S噴出時,蒸鍍物質Vm也附著、堆積在收容箱31的外表面,即使成為微粒的發生源朝下方落下,因為收容箱31是偏移地配置,所以附著在基板S成為困難。其結果,可以將微粒的影響儘可能地減少。且,加熱手段33,因為是採用了將收容箱31加熱,藉由來自收容箱31的輻射熱將蒸鍍物質Vm加熱的構成,蒸鍍物質Vm即使附著在包含噴出口32b的收容箱31的內面和外面,藉由收容箱31本身被加熱,使蒸鍍物質Vm再度被昇華或是氣化。因此,微粒的發生源形成困難,而有利。且,活門板4是朝從基板S的端部分離方向被偏移,活門板4的下端是朝向收容箱31呈L字狀彎曲較佳。由此,與上述同樣,附著在活門板4的蒸鍍物質即使是成為微粒朝下方落下,也難附著在基板。 [0019] 以上,雖說明了本發明的實施例,但是本發明不限定於上述者。在上述實施例中雖說明了,在收容箱31設有複數根噴出噴嘴32的例,但是只有設置一根噴出噴嘴32也可以,且,在收容箱的角部開設圓形或開縫狀的孔,作為此噴出部也可以。 [0020] 但是將收容箱31偏移配置的情況,依據基板S的寬度,具有膜厚分布無法大致均一的情況。這種情況,如第3圖所示,在真空腔室1內,可以分別將收容箱31配置在基板S的寬度方向兩側。此情況,將各噴出噴嘴32的孔軸32a適宜地改變配置也可以。且,如第4圖所示,可以將基板S設置在旋轉平台5上,由規定的旋轉數一邊旋轉一邊鍍膜。旋轉平台5,是可以使用:具有將基板S水平保持的板狀的保持部51,馬達等的驅動手段52的旋轉軸53是被連結在此保持部51,藉由驅動手段52將保持部51以旋轉軸53為中心旋轉驅動的公知者。採用這種構成的話,可以改善膜厚分布。 [0021] 且為了改善膜厚分布,而將蒸鍍源3或是基板S移動也可以。例如,以在收容箱3是維持對於基板S偏移地配置的狀態,將蒸鍍源3及基板S之間的距離DS變更的方式,將蒸鍍源3及基板S的至少其中任一水平移動也可以。或是將蒸鍍源3上下移動也可以,將蒸鍍源3以在噴出噴嘴32的並設方向(X軸方向)延伸的軸為中心由規定的角度擺動也可以。 [0022] 進一步,在上述實施例中雖說明了,被鍍膜物是玻璃基板,藉由基板搬運裝置2將玻璃基板由一定的速度一邊搬運一邊鍍膜的例,但是真空蒸鍍裝置的構成,不限定於上述者。例如,將被鍍膜物作為薄片狀的基材,在驅動滾子及捲取滾子之間一邊由一定的速度將基材移動一邊在基材的單面鍍膜的裝置,本發明也可以適用。且,將被鍍膜物組裝在真空腔室1,在蒸鍍源附設具有公知的構造的驅動手段,對於被鍍膜物將蒸鍍源3一邊相對移動一邊鍍膜者,本發明也可以適用。進一步,雖說明了在收容箱31將噴出噴嘴32一列地設置的例,是複數列設置也可以。[0013] Hereinafter, referring to the drawings, the object to be coated is a glass substrate (hereinafter referred to as "substrate S") having a predetermined thickness having a rectangular outline, and a case where a predetermined thin film is coated on one side of the substrate S is taken as an example. An example of the vacuum evaporation apparatus of this invention is demonstrated. [0014] Referring to FIGS. 1 and 2, the vacuum evaporation apparatus DM includes a vacuum chamber 1. Although not specifically illustrated in the vacuum chamber 1, a vacuum pump is connected through the exhaust pipe, and the vacuum chamber 1 can be evacuated and maintained at a predetermined pressure (degree of vacuum). A substrate transfer device 2 is provided at a lower portion of the vacuum chamber 1 in the vertical direction. The substrate transfer device 2 includes a carrier 21 that holds the substrate S in a state where the upper surface serving as a coating surface is opened, and the carrier 21 and the substrate S are directed in one direction of the vacuum chamber 1 by a driving device (not shown). Move at the specified speed. Since the substrate transfer device 2 can be used by a publicly known person, the above description is omitted. However, in this embodiment, the substrate transfer device 2 relatively moves the substrate S in a direction in the vacuum chamber 1 with respect to a vapor deposition source described later. Means of movement. In the following, the relative movement direction of the substrate S to the vapor deposition source is set to the X-axis direction, and the width direction of the substrate S perpendicularly crossing the X-axis direction is set to the Y-axis direction. [0015] In the vacuum chamber 1, a vapor deposition source 3 is provided which is located in a more vertical direction than the substrate S. The vapor deposition source 3 is a storage box 31 having a vapor deposition substance Vm appropriately selected corresponding to a thin film to be deposited on the substrate S. In this case, the storage box 31 has a rectangular parallelepiped shape that is long in the Y-axis direction. Among the corners in the Y-axis direction below the storage box 31, a plurality of ejection nozzles 32 as ejection sections formed of a cylinder are in the Y-axis direction. Provision is protruded at intervals. In this case, the ejection nozzle 32 is such that the hole axis 32a of the nozzle hole is inclined at a predetermined angle with respect to the vertical direction, and the ejection port 32b at the tip thereof is inclined downward in the vertical direction. In this case, the inclination angle of the hole axis 32a is based on the uniformity of the width of the substrate S, the ejection distribution of the vapor deposition material Vm from the ejection nozzle 32 caused by the vapor deposition material Vm, and the uniformity of the film thickness of the thin film formed on the substrate S. Etc. are set appropriately. [0016] The heating wire 33 as a heating means is wound around the storage box 31 including the ejection nozzle 32, and the power can be supplied to the storage box 31 across the entire body by applying power from a power source not shown in the figure. In addition, by heating the storage box 31 and heating the vapor deposition substance Vm in the container 31a by radiant heat from the storage box 31, the vapor deposition substance Vm can be sublimated or vaporized. Although not specifically illustrated, a dispersion plate is provided in the storage box 31. The storage box 31 can be heated to sublimate or vaporize the vapor deposition substance Vm inside, and this can be sublimated or vaporized. The vapor deposition material Vm is ejected from each ejection nozzle 32 approximately uniformly. The method of heating the storage box 31 substantially uniformly is not limited to the above. Further, the heating means for directly heating the vapor deposition substance Vm in the container 31a may not be separately provided. For example, a heating wire as another heating means is wound around the container 31a and is energized, and the vapor deposition substance Vm is borrowed. Heating by heat transfer is also possible. [0017] The storage box 31 configured as described above is disposed so that the ejection port 32b of the ejection nozzle 32 is shifted from a position separated from one end in the Y-axis direction of the substrate S. In this case, the interval DS between the discharge port 32b and one end in the Y-axis direction of the substrate S can be appropriately set in consideration of the uniformity of the film thickness of the thin film formed on the substrate S, and the like. In the vacuum chamber 1, a shutter plate 4 is provided, which is arranged close to the ejection port 32 b of the ejection nozzle 32 to prevent the vapor of the vapor deposition material from the ejection port 32 b from being ejected toward the substrate S in a vertical direction. The shutter plate 4 moves to the shielding position shown by the broken line in the figure until the discharge of the vapor deposition material Vm from the discharge nozzle 32 becomes stable, and if the discharge is stable, moves to the discharge position shown by the solid line in the figure. The driving means for reciprocating the shutter plate 4 between these two positions can use a well-known constructor, so the description is omitted here. The shutter plate 4 is also shifted in a direction separated from one end in the Y-axis direction of the substrate S. The lower end of the shutter plate 4 is bent in an L shape toward the storage box 31. [0018] According to the above embodiment, when the sublimated or vaporized vapor deposition material Vm is ejected from the ejection port 32b toward the substrate S in the storage box 31, the vapor deposition material Vm also adheres to and accumulates in the storage box 31. Even if the outer surface falls downward as a source of generation of particles, the storage box 31 is disposed offset, so that it is difficult to adhere to the substrate S. As a result, the influence of fine particles can be reduced as much as possible. The heating means 33 is configured to heat the storage box 31 and heat the vapor deposition material Vm by radiant heat from the storage box 31. Even if the vapor deposition material Vm is attached to the storage box 31 including the ejection port 32b, The surface and the outside are heated by the storage box 31 itself, so that the vapor deposition material Vm is sublimated or vaporized again. Therefore, it is difficult and advantageous to form a microparticle generation source. The shutter plate 4 is shifted in a direction away from the end portion of the substrate S, and the lower end of the shutter plate 4 is preferably bent in an L shape toward the storage box 31. Therefore, similar to the above, even if the vapor deposition substance adhering to the shutter plate 4 falls down as particles, it is difficult to adhere to the substrate. [0019] Although the embodiments of the present invention have been described above, the present invention is not limited to the above. Although the above embodiment has described an example in which a plurality of ejection nozzles 32 are provided in the storage box 31, only one ejection nozzle 32 may be provided, and a circular or slit-shaped opening may be provided at a corner of the storage box. A hole may be used as this ejection portion. [0020] However, when the storage box 31 is shifted, depending on the width of the substrate S, the film thickness distribution may not be substantially uniform. In this case, as shown in FIG. 3, in the vacuum chamber 1, the storage boxes 31 may be disposed on both sides in the width direction of the substrate S, respectively. In this case, the hole shaft 32a of each of the discharge nozzles 32 may be appropriately changed in arrangement. In addition, as shown in FIG. 4, the substrate S can be set on the rotary table 5 and can be coated while being rotated by a predetermined number of rotations. The rotating platform 5 can be used. A rotating shaft 53 having a plate-shaped holding portion 51 for horizontally holding the substrate S, and a driving means 52 such as a motor is connected to the holding portion 51. The holding portion 51 is driven by the driving means 52. A known person is driven to rotate around the rotation shaft 53. With this configuration, the film thickness distribution can be improved. [0021] In order to improve the film thickness distribution, the evaporation source 3 or the substrate S may be moved. For example, at least one of the vapor deposition source 3 and the substrate S is changed so that the storage box 3 is maintained in a state of being offset from the substrate S, and the distance DS between the vapor deposition source 3 and the substrate S is changed. Mobile is also possible. Alternatively, the vapor deposition source 3 may be moved up and down, and the vapor deposition source 3 may be swung at a predetermined angle around an axis extending in the juxtaposed direction (X-axis direction) of the discharge nozzles 32. [0022] Further, in the above-mentioned embodiment, although the object to be coated is a glass substrate, and the glass substrate is transported at a constant speed while being coated by the substrate transfer device 2, the configuration of the vacuum evaporation device is not described. Limited to the above. For example, the present invention can also be applied to an apparatus for coating a single-sided surface of a substrate by using an object to be coated as a sheet-like substrate and moving the substrate at a constant speed between a driving roller and a take-up roller. In addition, the object to be coated is assembled in the vacuum chamber 1 and a driving means having a known structure is attached to the evaporation source. The present invention is also applicable to a case where the object to be coated is coated while the evaporation source 3 is relatively moved. Furthermore, although the example in which the ejection nozzles 32 are arranged in a row in the storage box 31 has been described, a plurality of rows may be provided.
[0023][0023]
DM‧‧‧真空蒸鍍裝置DM‧‧‧Vacuum evaporation device
S‧‧‧基板(被鍍膜物)S‧‧‧ substrate (coated object)
Vm‧‧‧蒸鍍物質Vm‧‧‧Evaporation substance
1‧‧‧真空腔室1‧‧‧vacuum chamber
2‧‧‧基板搬運裝置(保持部、移動手段)2‧‧‧ substrate transfer device (holding unit, moving means)
3‧‧‧蒸鍍源3‧‧‧ evaporation source
4‧‧‧活門板4‧‧‧ valve plate
5‧‧‧旋轉平台5‧‧‧ rotating platform
21‧‧‧載體21‧‧‧ carrier
31‧‧‧收容箱31‧‧‧Storage Box
31a‧‧‧容器31a‧‧‧container
32‧‧‧噴出噴嘴(噴出部)32‧‧‧Ejection nozzle (ejection section)
32a‧‧‧孔軸32a‧‧‧hole shaft
32b‧‧‧噴出口32b‧‧‧jet outlet
33‧‧‧電熱線(加熱手段)33‧‧‧ Electric hotline (heating means)
51‧‧‧保持部51‧‧‧holding department
52‧‧‧驅動手段52‧‧‧Driving means
53‧‧‧旋轉軸(軸)53‧‧‧Rotating shaft (axis)
[0012] [第1圖] 說明本發明的真空蒸鍍裝置的實施例,一部分為剖面視的部分立體圖。 [第2圖] 說明基板及蒸鍍源的配置關係的圖。 [第3圖] 說明蒸鍍源的變形例的圖。 [第4圖] 說明真空蒸鍍裝置的變形例的圖。[0012] 第 [FIG. 1] An embodiment of the vacuum evaporation apparatus of the present invention will be described, and a part is a partial perspective view in cross section.第 [Fig. 2] A diagram illustrating the arrangement relationship between a substrate and a vapor deposition source. [Fig. 3] A diagram illustrating a modified example of the vapor deposition source. [Fig. 4] A diagram illustrating a modification of the vacuum vapor deposition apparatus.
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-152343 | 2016-08-02 | ||
JP2016152343 | 2016-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201816151A TW201816151A (en) | 2018-05-01 |
TWI658162B true TWI658162B (en) | 2019-05-01 |
Family
ID=61073370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106125452A TWI658162B (en) | 2016-08-02 | 2017-07-28 | Vacuum evaporation device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6554612B2 (en) |
KR (1) | KR102170484B1 (en) |
CN (1) | CN109415800B (en) |
TW (1) | TWI658162B (en) |
WO (1) | WO2018025638A1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04272169A (en) * | 1991-02-25 | 1992-09-28 | Shimadzu Corp | Impregnating type vacuum deposition device |
JP2003317948A (en) * | 2002-04-23 | 2003-11-07 | Ulvac Japan Ltd | Evaporation source and thin film formation device using the same |
JP2004100002A (en) * | 2002-09-11 | 2004-04-02 | Ulvac Japan Ltd | Evaporation source and thin-film deposition system using the same |
CN103233201A (en) * | 2013-05-03 | 2013-08-07 | 中国科学院光电技术研究所 | Preparation method of medium protective film layer by downward thermal evaporation |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4216522A (en) | 1977-06-06 | 1980-08-05 | Texas Instruments Incorporated | Interchangeable module for integrated circuits |
KR20060030426A (en) * | 2004-10-05 | 2006-04-10 | 삼성에스디아이 주식회사 | Vacuum evaporating apparatus and vacuum evaporating method |
JP2008031501A (en) * | 2006-07-26 | 2008-02-14 | Canon Inc | Film deposition apparatus, and method of manufacturing vapor-deposited thin film |
KR101063192B1 (en) * | 2008-11-12 | 2011-09-07 | 주식회사 야스 | Deposition source capable of downward deposition |
KR20140120556A (en) * | 2013-04-03 | 2014-10-14 | 삼성디스플레이 주식회사 | Deposition apparatus |
KR20140145842A (en) * | 2013-06-14 | 2014-12-24 | 엘아이지에이디피 주식회사 | Apparatus for supplying deposition source and method for operating that |
KR20150057272A (en) * | 2013-11-19 | 2015-05-28 | 주식회사 포리스 | Downward Type Deposition Source, Deposition Apparatus and Method Having the Same |
-
2017
- 2017-07-19 CN CN201780039108.3A patent/CN109415800B/en active Active
- 2017-07-19 WO PCT/JP2017/026066 patent/WO2018025638A1/en active Application Filing
- 2017-07-19 JP JP2018531822A patent/JP6554612B2/en active Active
- 2017-07-19 KR KR1020187033457A patent/KR102170484B1/en active IP Right Grant
- 2017-07-28 TW TW106125452A patent/TWI658162B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04272169A (en) * | 1991-02-25 | 1992-09-28 | Shimadzu Corp | Impregnating type vacuum deposition device |
JP2003317948A (en) * | 2002-04-23 | 2003-11-07 | Ulvac Japan Ltd | Evaporation source and thin film formation device using the same |
JP2004100002A (en) * | 2002-09-11 | 2004-04-02 | Ulvac Japan Ltd | Evaporation source and thin-film deposition system using the same |
CN103233201A (en) * | 2013-05-03 | 2013-08-07 | 中国科学院光电技术研究所 | Preparation method of medium protective film layer by downward thermal evaporation |
Also Published As
Publication number | Publication date |
---|---|
KR102170484B1 (en) | 2020-10-28 |
TW201816151A (en) | 2018-05-01 |
CN109415800B (en) | 2021-01-08 |
KR20180137525A (en) | 2018-12-27 |
JPWO2018025638A1 (en) | 2018-10-18 |
JP6554612B2 (en) | 2019-07-31 |
CN109415800A (en) | 2019-03-01 |
WO2018025638A1 (en) | 2018-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2009519591A (en) | Apparatus and method for treating the surface of a substrate | |
US20070148348A1 (en) | Evaporation source and method of depositing thin film using the same | |
BR102017025826A2 (en) | application head and application system of a coating product on a surface to be coated | |
JP6002888B2 (en) | Deposition method | |
KR20180129960A (en) | Vacuum deposition apparatus | |
KR20170130557A (en) | Template manufacturing equipment for imprints | |
KR20150144423A (en) | Apparatus for drying substrate | |
TWI658162B (en) | Vacuum evaporation device | |
KR101309044B1 (en) | Nano coating apparatus | |
KR20060018746A (en) | Apparatus for depositing organic material | |
WO2013172403A1 (en) | Film-formation device and film-formation method | |
TWI745830B (en) | Liquid processing apparatus and liquid processing method | |
JP7092543B2 (en) | Vacuum deposition equipment | |
KR20130007343A (en) | Linear nozzle for depositing a thin film and apparatus thereof | |
KR101230241B1 (en) | Method of Aerosol Deposition for Ceramic Powder | |
JP7011521B2 (en) | Thin-film deposition source for vacuum-film deposition equipment | |
JP3707574B2 (en) | Method and apparatus for producing ceramic green sheet | |
KR101199680B1 (en) | Linear Evaporation Source | |
JP2020132984A (en) | Vacuum treatment apparatus and vacuum treatment method | |
KR101123634B1 (en) | Apparatus controlling the ambient pressure of spray nozzle uniformly Coating apparatus for solid powder using the same | |
KR100698926B1 (en) | Substrate coating apparatus | |
JP7141793B2 (en) | Evaporation source for vacuum deposition apparatus and vacuum deposition method | |
KR102188345B1 (en) | Vapor deposition device substrate treting method | |
KR101347259B1 (en) | Evaporating apparatus of organic matter | |
KR100646514B1 (en) | Apparatus for Depositing Organic Material |