TWI658132B - 研磨用組成物、研磨用組成物之製造方法及矽晶圓製造方法 - Google Patents

研磨用組成物、研磨用組成物之製造方法及矽晶圓製造方法 Download PDF

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Publication number
TWI658132B
TWI658132B TW103132789A TW103132789A TWI658132B TW I658132 B TWI658132 B TW I658132B TW 103132789 A TW103132789 A TW 103132789A TW 103132789 A TW103132789 A TW 103132789A TW I658132 B TWI658132 B TW I658132B
Authority
TW
Taiwan
Prior art keywords
polishing
polishing composition
particles
silicon wafer
protrusions
Prior art date
Application number
TW103132789A
Other languages
English (en)
Chinese (zh)
Other versions
TW201518491A (zh
Inventor
井出匠学
高橋洋介
高見信一郎
Original Assignee
福吉米股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 福吉米股份有限公司 filed Critical 福吉米股份有限公司
Publication of TW201518491A publication Critical patent/TW201518491A/zh
Application granted granted Critical
Publication of TWI658132B publication Critical patent/TWI658132B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW103132789A 2013-09-26 2014-09-23 研磨用組成物、研磨用組成物之製造方法及矽晶圓製造方法 TWI658132B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-200641 2013-09-26
JP2013200641 2013-09-26

Publications (2)

Publication Number Publication Date
TW201518491A TW201518491A (zh) 2015-05-16
TWI658132B true TWI658132B (zh) 2019-05-01

Family

ID=52743227

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103132789A TWI658132B (zh) 2013-09-26 2014-09-23 研磨用組成物、研磨用組成物之製造方法及矽晶圓製造方法

Country Status (3)

Country Link
JP (1) JP6279593B2 (ja)
TW (1) TWI658132B (ja)
WO (1) WO2015046090A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6482200B2 (ja) * 2014-07-18 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
US11897081B2 (en) 2016-03-01 2024-02-13 Fujimi Incorporated Method for polishing silicon substrate and polishing composition set
JP6716160B2 (ja) * 2016-05-31 2020-07-01 株式会社ディスコ 加工装置及び加工方法
JP6604313B2 (ja) * 2016-11-10 2019-11-13 株式会社Ｓｕｍｃｏ 砥粒の評価方法並びにウェーハの製造方法
JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
EP3690983A4 (en) * 2017-09-28 2021-04-21 Zeon Corporation COMPOSITION FOR FUNCTIONAL LAYER OF A WATER-FREE SECONDARY BATTERY, FUNCTIONAL LAYER FOR WATER-FREE SECONDARY BATTERY, ELEMENT OF A WATER-FREE SECONDARY BATTERY, AND WATER-FREE SECONDARY BATTERY
US10822524B2 (en) * 2017-12-14 2020-11-03 Rohm And Haas Electronic Materials Cmp Holdings, I Aqueous compositions of low dishing silica particles for polysilicon polishing
KR20220150963A (ko) * 2020-03-13 2022-11-11 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 연마 방법
JPWO2022202688A1 (ja) * 2021-03-26 2022-09-29

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010058985A (ja) * 2008-09-01 2010-03-18 Jgc Catalysts & Chemicals Ltd シリカゾルおよびその製造方法
JP2013080752A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3169120B2 (ja) * 1995-07-21 2001-05-21 信越半導体株式会社 半導体鏡面ウェーハの製造方法
JP4038429B2 (ja) * 2000-10-26 2008-01-23 信越半導体株式会社 ウェーハの製造方法及び研磨装置並びにウェーハ
JP2010153576A (ja) * 2008-12-25 2010-07-08 Asahi Glass Co Ltd 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2012079964A (ja) * 2010-10-04 2012-04-19 Nissan Chem Ind Ltd 半導体ウェーハ用研磨液組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010058985A (ja) * 2008-09-01 2010-03-18 Jgc Catalysts & Chemicals Ltd シリカゾルおよびその製造方法
JP2013080752A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物

Also Published As

Publication number Publication date
WO2015046090A1 (ja) 2015-04-02
JP6279593B2 (ja) 2018-02-14
TW201518491A (zh) 2015-05-16
JPWO2015046090A1 (ja) 2017-03-09

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