TWI655702B - Substrate processing device and substrate processing method - Google Patents
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- 101710101695 Probable mitochondrial pyruvate carrier 1 Proteins 0.000 description 36
- 102100030373 HSPB1-associated protein 1 Human genes 0.000 description 20
- 101000843045 Homo sapiens HSPB1-associated protein 1 Proteins 0.000 description 20
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- 230000005855 radiation Effects 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 238000012384 transportation and delivery Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
基板處理裝置係包含有:複數個處理單元,係用以處理基板;處理液供給源,係用以將處理液供給至處理單元;以及處理液供給路徑,係用以導引處理液。處理液供給路徑係包含有:主供給路徑,係連接至處理液供給源;以及複數個分歧供給路徑,係分別從主供給路徑分歧至複數個處理單元。於各個分歧供給路徑配置有處理液關連單元以及處理液閥。控制器係控制複數個處理液閥,且不論處理液關連單元有無異常發生皆計畫用以消除分歧供給路徑的流路中的氣泡之氣泡消除動作(氣泡去除處理),並依據該計畫控制複數個處理液閥。 The substrate processing apparatus includes: a plurality of processing units for processing the substrate; a processing liquid supply source for supplying the processing liquid to the processing unit; and a processing liquid supply path for guiding the processing liquid. The processing liquid supply path includes: a main supply path connected to the processing liquid supply source; and a plurality of branched supply paths branching from the main supply path to a plurality of processing units. A processing liquid related unit and a processing liquid valve are arranged in each branch supply path. The controller controls a plurality of processing liquid valves, and plans to eliminate bubbles (bubble removal processing) for eliminating bubbles in the flow paths of the divergent supply paths regardless of whether or not abnormalities occur in the processing liquid-related unit, and controls according to the plan Multiple treatment fluid valves.
Description
本發明係有關於一種用以處理基板之基板處理裝置及基板處理方法。成為處理對象之基板係包括例如半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、FED(Field Emission Display;場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板以及太陽能電池用基板等。 The invention relates to a substrate processing device and a substrate processing method for processing substrates. The substrates to be processed include, for example, semiconductor wafers, liquid crystal display device substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disc substrates, magnetic disc substrates, and optical magnetic disc substrates Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, etc.
專利文獻1係揭示有一種以處理液處理基板之基板處理裝置的一例。該基板處理裝置係包含有複數個處理單元、用以將基板搬運至各個處理單元之搬運機器人以及用以進行裝置控制之主(master)裝置。處理單元係包含有:自轉夾具(spin chuck),係保持基板並使基板旋轉;以及處理液噴嘴,係將處理液供給至被自轉夾具保持的基板。於處理液噴嘴連接有處理液供給配管。於處理液供給配管連接有第一藥液供給配管、第二藥液供給配管以及清洗(rinse)液供給配管。於第一藥液供給配管、第二藥液供給配管以及清洗液供給配管各者夾設有流量計以及電動式針閥(needle valve)。流量計係檢測流經各個供給配管之處理液的流量,並將檢測結果輸入至主裝置。主裝置係因應流量檢測結果回授(feedback)控制電動式針閥的開度。 Patent Document 1 discloses an example of a substrate processing apparatus that processes a substrate with a processing liquid. The substrate processing apparatus includes a plurality of processing units, a transport robot for transporting substrates to each processing unit, and a master device for device control. The processing unit includes a spin chuck that holds the substrate and rotates the substrate, and a processing liquid nozzle that supplies the processing liquid to the substrate held by the spin chuck. A processing liquid supply pipe is connected to the processing liquid nozzle. The first chemical liquid supply pipe, the second chemical liquid supply pipe, and the rinse liquid supply pipe are connected to the processing liquid supply pipe. A flow meter and an electric needle valve are interposed between each of the first chemical liquid supply piping, the second chemical liquid supply piping, and the cleaning liquid supply piping. The flow meter detects the flow rate of the processing liquid flowing through each supply pipe, and inputs the detection result to the main device. The main device controls the opening of the electric needle valve according to the feedback of the flow detection result.
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
專利文獻1:美國專利公開第2015/220468號公報。 Patent Document 1: US Patent Publication No. 2015/220468.
存在於處理液的供給路徑出現泡氣之情形,該氣泡係起因於溶存於處理液中的氣體。當該氣泡被捕集(trap)至供給路徑時,有對處理液的正確的供給路徑和流量的檢測等產生障礙之虞。例如氣泡在流量計的檢測對象區域被捕捉時,無法正確地檢測流量。 There is a case where gas bubbles appear in the supply path of the processing liquid, and the bubbles are caused by the gas dissolved in the processing liquid. When the bubbles are trapped to the supply path, there is a possibility that the correct supply path of the processing liquid and the detection of the flow rate may be obstructed. For example, when bubbles are captured in the detection target area of the flowmeter, the flow rate cannot be detected correctly.
因此,在從流量計輸出錯誤訊號之情形中,需要以大流量將處理液壓送至處理液的供給路徑藉此壓出流路內的氣泡。具體而言,作業者實行的順序如下。 Therefore, in the case where an error signal is output from the flowmeter, it is necessary to send the processing hydraulic pressure to the supply path of the processing liquid at a large flow rate to thereby press out bubbles in the flow path. Specifically, the procedure performed by the operator is as follows.
順序1:停止基板處理裝置所為之基板處理運轉。 Sequence 1: Stop the substrate processing operation for the substrate processing device.
順序2:從與已輸出錯誤訊號的流量計對應之處理單元取出處理途中的基板。 Sequence 2: Take out the substrate in the process from the processing unit corresponding to the flowmeter that has output the error signal.
順序3:將連接至全部的處理單元的處理液噴嘴之閥關閉。 Sequence 3: The valves of the processing liquid nozzles connected to all the processing units are closed.
順序4:將配置有已輸出錯誤訊號的流量計之處理液供給路徑的閥開啟。 Sequence 4: Open the valve of the processing liquid supply path of the flowmeter equipped with the output error signal.
藉此,從設置於處理液供給源的泵朝一個處理單元的處理液供給路徑壓送處理液,該處理液係通過已產生錯誤訊號的流量計的檢測對象區域並從處理液噴嘴噴出。藉此,流量計的檢測對象區域的氣泡係與處理液一起朝處理液噴 嘴流動並排出。 With this, the processing liquid is pressure-fed from the pump provided in the processing liquid supply source to the processing liquid supply path of one processing unit, and the processing liquid is discharged from the processing liquid nozzle through the detection target area of the flowmeter that has generated an error signal. With this, the bubble system in the detection target area of the flowmeter is sprayed toward the processing liquid together with the processing liquid Mouth flows and discharges.
之後,作業者係將以順序4開啟的閥關閉,並再次開始基板處理裝置的通常運轉。 After that, the operator closes the valve opened in sequence 4 and restarts the normal operation of the substrate processing apparatus.
在此種順序中,需要進行用以停止基板處理裝置的基板處理運轉並去除氣泡之作業。因此,由於停止全部的處理單元的處理,因此降低基板處理裝置的稼動率。此外,有以順序2取出的基板成為無用之虞。 In such a sequence, an operation to stop the substrate processing operation of the substrate processing apparatus and remove air bubbles is required. Therefore, since the processing of all the processing units is stopped, the utilization rate of the substrate processing apparatus is reduced. In addition, there is a possibility that the substrate taken out in order 2 becomes useless.
因此,本發明的目的之一在於提供一種能提升基板處理裝置的稼動率之基板處理裝置及基板處理方法。 Therefore, one of the objects of the present invention is to provide a substrate processing apparatus and a substrate processing method that can increase the utilization rate of the substrate processing apparatus.
此外,本發明的另一目的在於提供一種能抑制伴隨著在流路內產生氣泡所造成的基板無用之基板處理裝置及基板處理方法。 In addition, another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing useless substrates caused by bubbles generated in a flow path.
本發明提供一種基板處理裝置,係包含有:複數個處理單元,係藉由處理液處理基板;處理液供給源,係用以供給前述處理液;處理液供給路徑,係包含有:主供給路徑,係連接至前述處理液供給源;以及複數個分歧供給路徑,係從前述主供給路徑分別分歧至前述複數個處理單元;處理液關連單元,係分別配置於前述複數個分歧供給路徑,並作用或響應至前述分歧供給路徑的流路內的處理液;複數個處理液閥,係分別將前述複數個分歧供給路徑予以開閉,並控制朝前述處理單元供給處理液;以及控制器,係控制前述複數個處理液閥。前述控制器係被程式化成不論前述處理液關連單元有無異常皆計畫用以消除前述分歧供給路徑的流路中的 氣泡之氣泡消除動作,並依據該計畫控制前述複數個處理液閥。 The present invention provides a substrate processing device including: a plurality of processing units for processing a substrate with a processing liquid; a processing liquid supply source for supplying the foregoing processing liquid; a processing liquid supply path including: a main supply path , Connected to the processing liquid supply source; and a plurality of branched supply paths, branching from the main supply path to the plurality of processing units; a processing liquid related unit, respectively configured on the plurality of branched supply paths, and functioning Or in response to the processing liquid in the flow path of the divergent supply path; a plurality of the process liquid valves respectively opening and closing the plural divergent supply paths and controlling the supply of the processing liquid to the processing unit; and a controller controlling the aforesaid Multiple treatment fluid valves. The controller is programmed to eliminate any abnormalities in the flow path of the divergent supply path regardless of the abnormality of the processing liquid-related unit The bubble elimination action of the bubbles, and control of the plurality of processing liquid valves described above in accordance with the plan.
依據此構成,控制處理液閥,俾使不論處理液關連單元有無異常皆進行用以消除分歧供給路徑的流路內的氣泡之氣泡消除動作。亦即,無須等待處理液關連單元產生異常,預先計畫氣泡消除動作並預防性地實施。藉此,由於能抑制或防止伴隨著處理液關連單元的異常所導致的基板處理裝置停止運轉,因此能提升基板處理裝置的稼動率。此外,由於能在氣泡於分歧供給路徑被捕獲並對基板處理產生影響之前就先消除分歧供給路徑的氣泡,因此能抑制或防止基板成為無用。 According to this configuration, the processing liquid valve is controlled so that the bubble elimination operation for eliminating bubbles in the flow path of the divergent supply path is performed regardless of the abnormality of the processing liquid-related unit. That is, there is no need to wait for an abnormality in the processing liquid-related unit, and the air bubble elimination operation is planned in advance and implemented preventively. With this, the substrate processing apparatus can be suppressed or prevented from being shut down due to the abnormality of the processing liquid connection unit, so that the utilization rate of the substrate processing apparatus can be improved. In addition, the bubbles in the branched supply path can be eliminated before the bubbles are trapped in the branched supply path and affect the substrate processing, so that the substrate can be suppressed or prevented from being useless.
在本發明的實施形態之一中,前述氣泡消除動作係包含有下述動作:將預先制定的數量(比分歧供給路徑的總數還少的數量,例如一個)的前述分歧供給路徑的前述處理液閥設成開狀態,將其他的前述分歧供給路徑的前述處理液閥設成閉狀態。藉此,能將來自處理液供給源的處理液集中性地送入至預先制定的數量的分歧供給路徑。藉此,能增加分歧供給路徑的流量並將分歧供給路徑內的氣泡流出。 In one embodiment of the present invention, the bubble elimination operation includes the operation of pre-determining a predetermined amount (a number smaller than the total number of divergent supply paths, for example, one) of the treatment liquid of the divergent supply path The valve is set to an open state, and the processing liquid valves of the other branch supply paths are set to a closed state. Thereby, the processing liquid from the processing liquid supply source can be collectively sent to a predetermined number of divergent supply paths. As a result, the flow rate of the branch supply path can be increased and bubbles in the branch supply path can flow out.
在本發明的實施形態之一中,前述控制器係被程式化成計畫前述處理單元中的基板處理動作,並以避免與前述基板處理動作產生干擾之方式計畫前述氣泡消除動作。藉此,能抑制對於基板處理動作的影響,並能預防性地進行氣泡消除動作。因此,能抑制基板處理裝置的稼動率的降 低並執行預防性的氣泡消除動作。 In one embodiment of the present invention, the controller is programmed to plan the substrate processing operation in the processing unit, and the bubble elimination operation is planned in a manner to avoid interference with the substrate processing operation. With this, the influence on the substrate processing operation can be suppressed, and the bubble eliminating operation can be performed preventively. Therefore, it is possible to suppress a decrease in the utilization rate of the substrate processing apparatus Low and perform preventive bubble elimination actions.
在本發明的實施形態之一中,前述處理液關連單元係包含有:流量計,係計測流經前述分歧供給路徑的流路之處理液的流量。藉此,由於能監視供給至基板的處理液的流量,因此能對基板施予高品質的處理。再者,由於能抑制或防止氣泡被分歧供給路徑的流路捕獲,因此能抑制或防止因為氣泡的存在導致流量檢測變成不正確或不可能。因此,由於能抑制或防止流量檢測不良導致基板處理裝置停止運轉,因此能提升基板處理裝置的稼動率。 In one embodiment of the present invention, the processing liquid related unit includes a flow meter that measures the flow rate of the processing liquid flowing through the flow path of the divergent supply path. With this, since the flow rate of the processing liquid supplied to the substrate can be monitored, high-quality processing can be applied to the substrate. Furthermore, since the air bubbles can be suppressed or prevented from being caught by the flow path of the branch supply path, it is possible to suppress or prevent the flow rate detection from becoming incorrect or impossible due to the presence of the air bubbles. Therefore, since it is possible to suppress or prevent the substrate processing apparatus from stopping due to a poor flow detection, the utilization rate of the substrate processing apparatus can be improved.
此外,本發明係提供一種基板處理方法,係應用於基板處理裝置,該基板處理裝置係包含有:複數個處理單元,係藉由處理液處理基板;處理液供給源,係用以供給前述處理液;處理液供給路徑,係包含有:主供給路徑,係連接至前述處理液供給源;以及複數個分歧供給路徑,係從前述主供給路徑分別分歧至前述複數個處理單元;處理液關連單元,係分別配置於前述複數個分歧供給路徑,並作用或響應至前述分歧供給路徑的流路內的處理液;以及複數個處理液閥,係分別將前述複數個分歧供給路徑予以開閉,並控制朝前述處理單元供給處理液。該基板處理方法係包含有:不論前述處理液關連單元有無異常皆計畫用以消除前述分歧供給路徑的流路中的氣泡之氣泡消除動作之步驟;以及氣泡消除步驟,係依據前述計畫將前述複數個處理液閥予以開閉,俾用以執行前述計畫的氣泡消除動作。 In addition, the present invention provides a substrate processing method, which is applied to a substrate processing apparatus including: a plurality of processing units for processing a substrate with a processing liquid; and a processing liquid supply source for supplying the aforementioned processing Liquid; the processing liquid supply path includes: a main supply path connected to the processing liquid supply source; and a plurality of branched supply paths branching from the main supply path to the plurality of processing units; a processing liquid related unit , Which are respectively disposed in the plurality of branched supply paths and act or respond to the processing liquid in the flow paths of the branched supply paths; and a plurality of processing liquid valves, which respectively open and close the plurality of branched supply paths and control The processing liquid is supplied to the aforementioned processing unit. The substrate processing method includes: a step of planning a bubble elimination operation for eliminating bubbles in the flow path of the divergent supply path regardless of whether the processing liquid connection unit is abnormal or not; and the bubble elimination step is based on the above plan The plurality of processing liquid valves described above are opened and closed so as to perform the bubble removal operation of the foregoing plan.
在本發明的實施形態之一的基板處理方法中,前述氣 泡消除步驟係將預先制定的數量的前述分歧供給路徑的前述處理液閥設成開狀態,將其他的前述分歧供給路徑的前述處理液閥設成閉狀態。 In the substrate processing method according to one embodiment of the present invention, the gas The bubble elimination step sets the predetermined number of the processing liquid valves of the divergent supply paths to an open state, and sets the processing liquid valves of the other diverging supply paths to a closed state.
在本發明的實施形態之一的基板處理方法中,進一步包含有計畫前述處理單元中的基板處理動作之步驟;計畫前述氣泡消除動作之步驟係以避免與前述基板處理動作產生干擾之方式計畫前述氣泡消除動作。 The substrate processing method according to one embodiment of the present invention further includes a step of planning a substrate processing operation in the processing unit; a step of planning the bubble elimination operation is to avoid interference with the substrate processing operation Plan the aforementioned bubble elimination action.
在本發明的實施形態之一的基板處理方法中,前述處理液關連單元係包含有:流量計,係計測流經前述分歧供給路徑的流路之處理液的流量。 In the substrate processing method according to one embodiment of the present invention, the processing liquid related unit includes a flow meter that measures the flow rate of the processing liquid flowing through the flow path of the divergent supply path.
此外,本發明係提供一種基板處理裝置,係包含有:第一處理區劃,係包含有:第一處理單元,係藉由處理液處理基板;第一處理液供給源,係用以供給前述處理液;第一處理液供給路徑,係包含有:第一主供給路徑,係連接至前述第一處理液供給源;以及第一分歧供給路徑,係從前述第一主供給路徑分歧至前述第一處理單元;第一處理液關連單元,係配置於前述第一分歧供給路徑,並作用或響應至前述第一分歧供給路徑的流路內的處理液;以及第一處理液閥,係將前述第一分歧供給路徑予以開閉,並控制朝前述第一處理單元供給處理液;第二處理區劃,係包含有:第二處理單元,係藉由處理液處理基板;第二處理液供給源,係用以供給前述處理液;第二處理液供給路徑,係包含有:第二主供給路徑,係連接至前述第二處理液供給源;以及第二分歧供給路徑,係從前述第二主供給路徑分歧至前述第二處理單 元;第二處理液關連單元,係配置於前述第二分歧供給路徑,並作用或響應至前述第二分歧供給路徑的流路內的處理液;以及第二處理液閥,係將前述第二分歧供給路徑予以開閉,並控制朝前述第二處理單元供給處理液;以及控制器,係控制前述第一處理液閥及前述第二處理液閥以及前述第一處理單元及前述第二處理單元。 In addition, the present invention provides a substrate processing apparatus including: a first processing zone, including: a first processing unit for processing a substrate with a processing liquid; and a first processing liquid supply source for supplying the aforementioned processing The first processing liquid supply path includes: a first main supply path connected to the first processing liquid supply source; and a first branched supply path branching from the first main supply path to the first A processing unit; a first processing liquid connection unit, which is disposed in the first branched supply path and acts or responds to the processing liquid in the flow path of the first branched supply path; and a first processing liquid valve, which connects the first A branch supply path is opened and closed, and the supply of the processing liquid to the first processing unit is controlled; the second processing area includes: a second processing unit that processes the substrate with the processing liquid; a second processing liquid supply source, which is used To supply the processing liquid; the second processing liquid supply path includes: a second main supply path connected to the second processing liquid supply source; and a second branched supply path diverging from the second main supply path To the aforementioned second processing order Element; a second processing liquid connection unit, which is disposed in the second branched supply path and acts or responds to the processing liquid in the flow path of the second branched supply path; and a second processing liquid valve, which connects the second The branch supply path is opened and closed, and the supply of the processing liquid to the second processing unit is controlled; and the controller controls the first processing liquid valve and the second processing liquid valve and the first processing unit and the second processing unit.
前述控制器係被程式化成:當被指示氣泡消除動作的計畫時,以與前述氣泡消除動作計畫對應之處理區劃計畫氣泡消除動作;在前述氣泡消除動作的計畫後,當被指示以前述第一處理區劃或前述第二處理區劃進行基板處理的計畫時,選擇不會與前述氣泡消除動作計畫產生干擾之處理區劃,並以前述選擇的處理區劃計畫前述基板處理。 The aforementioned controller is programmed to: when instructed by the bubble elimination action plan, plan the bubble elimination action with the processing area corresponding to the aforementioned bubble elimination action plan; after the aforementioned bubble elimination action plan, when instructed When performing a plan for substrate processing using the first processing zone or the second processing zone, select a process zone that does not interfere with the bubble elimination plan, and plan the substrate process with the selected process zone.
依據此構成,當在氣泡消除動作的計畫後被指示基板處理的計畫時,能選擇不會干擾氣泡消除動作計畫之處理區劃,並計畫使用了隸屬於該處理區劃的處理單元之基板處理。結果,能有效地利用複數個處理區劃並執行基板處理,藉此能抑制或防止伴隨著氣泡消除動作的執行導致基板處理裝置的停止時間。 According to this configuration, when the plan for instructing substrate processing after the plan for the bubble elimination operation is selected, the process division that does not interfere with the bubble elimination operation plan can be selected, and the plan uses a processing unit that belongs to the process division Substrate processing. As a result, it is possible to effectively utilize a plurality of processing divisions and perform substrate processing, whereby it is possible to suppress or prevent the stoppage time of the substrate processing apparatus accompanying the execution of the bubble eliminating operation.
本發明的上述目的、特徵及功效以及其他的目的、特徵及功效能藉由參照圖式以及下述的實施形態的說明而明瞭。 The above objects, features, and effects of the present invention and other objects, features, and effects can be made clear by referring to the drawings and the description of the following embodiments.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing device
2‧‧‧承載器保持部 2‧‧‧Carrier Holder
3‧‧‧索引部 3‧‧‧ Index Department
4‧‧‧處理部 4‧‧‧ Processing Department
5‧‧‧搬運路徑 5‧‧‧Handling path
10‧‧‧藥液供給區塊 10‧‧‧medicine supply block
11、21、22‧‧‧手部 11, 21, 22 ‧‧‧ hand
12‧‧‧多關節手臂 12‧‧‧Multi-joint arm
13、25、36‧‧‧旋轉軸線 13, 25, 36‧‧‧ rotation axis
15‧‧‧基板載置台 15‧‧‧Substrate mounting table
23、24‧‧‧手部進退機構 23.24‧‧‧Hand advance and retreat mechanism
31‧‧‧處理腔室 31‧‧‧Process chamber
32‧‧‧處理罩 32‧‧‧Processing hood
33‧‧‧自轉夾具 33‧‧‧Rotating fixture
34‧‧‧藥液噴嘴 34‧‧‧Medicinal liquid nozzle
40‧‧‧藥液供給配管 40‧‧‧medicine supply piping
41‧‧‧主供給路徑 41‧‧‧Main supply path
41A‧‧‧立起部 41A‧‧‧Rising Department
41B‧‧‧橫渡部 41B‧‧‧ Crossing Department
41C‧‧‧垂下部 41C
42、43‧‧‧分歧供給路徑 42、43‧‧‧Different supply paths
45‧‧‧流量調整閥 45‧‧‧Flow regulating valve
46‧‧‧流量計 46‧‧‧Flowmeter
47‧‧‧藥液閥 47‧‧‧Medicine valve
51‧‧‧藥液出口 51‧‧‧drug solution export
52‧‧‧藥液返回口 52‧‧‧Return port
55‧‧‧藥液槽 55‧‧‧medicine tank
56‧‧‧泵 56‧‧‧Pump
57‧‧‧藥液路徑 57‧‧‧ medicine liquid path
58‧‧‧溫度調節器 58‧‧‧Temperature Regulator
60‧‧‧電腦 60‧‧‧Computer
61‧‧‧控制部 61‧‧‧Control Department
62‧‧‧輸出輸入部 62‧‧‧Output input section
63‧‧‧記憶部 63‧‧‧ Memory Department
64‧‧‧主機電腦 64‧‧‧Host computer
65‧‧‧排程功能部 65‧‧‧Scheduling function
66‧‧‧處理執行指示部 66‧‧‧Process execution instruction department
70‧‧‧程式 70‧‧‧Program
71‧‧‧排程製作程式 71‧‧‧ Scheduler
72‧‧‧處理執行程式 72‧‧‧Process execution program
80‧‧‧製程工作資料 80‧‧‧ process work information
81‧‧‧排程資料 81‧‧‧ Schedule data
82‧‧‧使用歷程資料 82‧‧‧Use history data
90‧‧‧流路 90‧‧‧Flow
91‧‧‧第一感測器 91‧‧‧First sensor
92‧‧‧第二感測器 92‧‧‧Second sensor
93‧‧‧氣泡 93‧‧‧Bubble
B1、B2、B3、B4、B6、B7、B8、B9、B11、B12、B13、B14、B15、B16‧‧‧區塊 Blocks B1, B2, B3, B4, B6, B7, B8, B9, B11, B12, B13, B14, B15, B16‧‧‧
B5‧‧‧處理區塊 B5‧‧‧ processing block
B10‧‧‧藥液供給區塊 B10‧‧‧medicine supply block
C‧‧‧承載器 C‧‧‧Carrier
CC‧‧‧藥液箱 CC‧‧‧medicine tank
CC1‧‧‧第一藥液箱 CC1‧‧‧ First medicine tank
CC2‧‧‧第二藥液箱 CC2‧‧‧Second medicine liquid tank
CC3‧‧‧第三藥液箱 CC3‧‧‧ third medicine liquid tank
CR1‧‧‧第一主搬運機器人 CR1‧‧‧The first main handling robot
CR2‧‧‧第二主搬運機器人 CR2‧‧‧The second main handling robot
IR‧‧‧索引機器人 IR‧‧‧ Index Robot
LP、LP1、LP2、LP3、LP4‧‧‧裝載埠 LP, LP1, LP2, LP3, LP4
MPC、MPC1至MPC24‧‧‧處理單元 MPC, MPC1 to MPC24‧‧‧‧ processing unit
PASS1‧‧‧第一授受單元 PASS1‧‧‧The first unit
PASS2‧‧‧第二授受單元 PASS2‧‧‧Second Grant Unit
PZ、PZ2‧‧‧處理區劃 PZ, PZ2 ‧‧‧ processing division
PZ1‧‧‧第一處理區劃(處理區劃) PZ1‧‧‧The first processing zone (processing zone)
PZ2‧‧‧第二處理區劃(處理區劃) PZ2‧‧‧Second processing division (processing division)
PZ3‧‧‧第三處理區劃(處理區劃) PZ3‧‧‧third processing division (processing division)
T1、T2、T3‧‧‧區劃最後使用時刻 T1, T2, T3 ‧‧‧ Division last use time
TW、TW1至TW6‧‧‧單元塔 TW, TW1 to TW6 ‧‧‧ unit tower
V‧‧‧流速 V‧‧‧Flow rate
W、W1至W4‧‧‧基板 W, W1 to W4 ‧‧‧ substrate
t1、t2、t9、t17‧‧‧單元最後使用時刻 t1, t2, t9, t17 ‧‧‧ unit last use time
圖1係用以說明本發明實施形態之一的基板處理裝置的構成之示意性的俯視圖。 FIG. 1 is a schematic plan view for explaining the structure of a substrate processing apparatus according to an embodiment of the present invention.
圖2係與圖1的剖線Ⅱ-Ⅱ對應之示意性的剖視圖。 FIG. 2 is a schematic cross-sectional view corresponding to the section line II-II of FIG. 1.
圖3係用以說明前述基板處理裝置內的藥液配管系統之系統圖。 3 is a system diagram for explaining the chemical liquid piping system in the substrate processing apparatus.
圖4係用以說明前述基板處理裝置的電性構成之方塊圖。 FIG. 4 is a block diagram illustrating the electrical structure of the aforementioned substrate processing apparatus.
圖5係用以說明配置於藥液供給路徑的流量計的構成例之示意性的剖視圖。 5 is a schematic cross-sectional view for explaining a configuration example of a flowmeter arranged in a chemical liquid supply path.
圖6係用以說明前述基板處理裝置所具備的電腦所為的處理例之流程圖。 6 is a flowchart for explaining an example of processing performed by a computer included in the substrate processing apparatus.
圖7係用以說明前述基板處理裝置所具備的電腦所為的處理例之流程圖。 7 is a flowchart for explaining an example of processing performed by a computer included in the substrate processing apparatus.
圖8A係用以顯示排程(scheduling)時所作成的暫時時間表的一例。 FIG. 8A is an example of a temporary schedule created during scheduling.
圖8B係用以顯示排程時所作成的暫時時間表的另一例。 FIG. 8B shows another example of the temporary schedule created during scheduling.
圖8C係用以顯示排程時所作成的暫時時間表的又另一例。 FIG. 8C is another example of a temporary schedule created during scheduling.
圖9係用以顯示氣泡去除處理(氣泡消除動作)的排程的一例。 FIG. 9 is a diagram showing an example of the schedule of the bubble removing process (bubble removing operation).
圖10A係用以顯示基板處理的排程的一例。 FIG. 10A is an example for showing a schedule of substrate processing.
圖10B係用以顯示基板處理的排程的一例。 FIG. 10B is an example for showing a schedule of substrate processing.
圖11A係用以顯示包含有氣泡去除處理以及基板處理之排程的一例。 FIG. 11A is used to show an example of a schedule including bubble removal processing and substrate processing.
圖11B係用以顯示包含有氣泡去除處理以及基板處理 之排程的一例。 FIG. 11B is used to show the inclusion of bubble removal processing and substrate processing An example of scheduling.
圖12係用以顯示包含有氣泡去除處理以及基板處理之排程的另一例。 FIG. 12 is a diagram showing another example of a schedule including bubble removal processing and substrate processing.
圖1係用以說明本發明實施形態之一的基板處理裝置的構成之示意性的俯視圖。此外,圖2係與圖1的剖線Ⅱ-Ⅱ對應之示意性的剖視圖。 FIG. 1 is a schematic plan view for explaining the structure of a substrate processing apparatus according to an embodiment of the present invention. In addition, FIG. 2 is a schematic cross-sectional view corresponding to the cross-sectional line II-II of FIG. 1.
該基板處理裝置1係包含有承載器(carrier)保持部2、索引(indexer)部3以及處理部4。承載器保持部2係包含有:複數個裝載埠(load port)LP,係分別保持可收容複數片基板W之屬於基板收容器的承載器C。索引部3係包含有索引機器人IR。索引機器人IR係執行:搬入動作,係從被承載器保持部2保持的承載器C取出未處理的基板W並傳遞至處理部4;以及收容動作,係從處理部4接取處理完畢的基板W並收容至被承載器保持部2保持的承載器C。 The substrate processing apparatus 1 includes a carrier holding unit 2, an indexer unit 3, and a processing unit 4. The carrier holding portion 2 includes a plurality of load ports LP, and holds carriers C belonging to the substrate container that can accommodate a plurality of substrates W, respectively. The index unit 3 includes an index robot IR. The index robot IR executes: a loading operation, which takes out the unprocessed substrate W from the carrier C held by the carrier holding unit 2 and transfers it to the processing unit 4; and a storage operation, which takes the processed substrate from the processing unit 4 W is accommodated in the carrier C held by the carrier holding part 2.
處理部4係包含有複數個處理單元MPC1至MPC24(以下總稱時稱為「處理單元MPC」)、第一主搬運機器人CR1(第一搬運機器人)、第二主搬運機器人CR2(第二搬運機器人)、第一授受單元PASS1以及第二授受單元PASS2。俯視觀看時,於處理部4內形成有從索引部3直線狀地延伸之搬運路徑5。於該搬運路徑5內從索引部3側依序配置有第一授受單元PASS1、第一主搬運機器人CR1、第二授受單元PASS2以及第二主搬運機器人CR2。第一授受單元PASS1為用以仲介在索引機器人IR與第一主搬運機器人CR1之間的基板W的授 受之單元。第二授受單元PASS2係用以仲介在第一主搬運機器人CR1與第二主搬運機器人CR2之間的基板W的授受之單元。 The processing unit 4 includes a plurality of processing units MPC1 to MPC24 (hereinafter collectively referred to as "processing unit MPC"), a first main transport robot CR1 (first transport robot), a second main transport robot CR2 (second transport robot ), the first grant unit PASS1 and the second grant unit PASS2. In the plan view, a conveying path 5 extending linearly from the index section 3 is formed in the processing section 4. The first transfer unit PASS1, the first main transfer robot CR1, the second transfer unit PASS2, and the second main transfer robot CR2 are sequentially arranged in the transfer path 5 from the index unit 3 side. The first transfer unit PASS1 is used to mediate the substrate W between the index robot IR and the first main transfer robot CR1 Accepted by the unit. The second transfer unit PASS2 is a unit for mediating the transfer of the substrate W between the first main transfer robot CR1 and the second main transfer robot CR2.
索引機器人IR、第一主搬運機器人CR1以及第二主搬運機器人CR2係構成用以在承載器保持部2與處理單元MPC之間搬運基板W之基板搬運單元。 The index robot IR, the first main transport robot CR1 and the second main transport robot CR2 constitute a substrate transport unit for transporting the substrate W between the carrier holding portion 2 and the processing unit MPC.
複數個處理單元MPC係以形成複數個單元塔TW1至TW6(以下總稱時稱為「單元塔TW」)之方式分散地配置。各個單元塔TW係將複數個處理單元MPC積層成複數層(在本實施形態為四層)而形成。在該實施形態中,各個單元塔TW係將四個處理單元MPC於上下方向積層而形成。複數個單元塔TW係分配至搬運路徑5的兩側,並沿著搬運路徑5排列。具體而言,在本實施形態中,於搬運路徑5的一側排列有三個單元塔TW1、TW3、TW5,於搬運路徑5的另一側排列有三個單元塔TW2、TW4、TW6。接著,單元塔TW1與單元塔TW2係作為一對並夾著搬運路徑5彼此相對向,單元塔TW3與單元塔TW4係作為一對並夾著搬運路徑5彼此相對向,單元塔TW5與單元塔TW6係作為一對並夾著搬運路徑5相對向。因此,在作為一對之單元塔TW1、TW2、作為一對之單元塔TW3、TW4以及作為一對之單元塔TW5、TW6中,單元塔TW1、TW2、單元塔TW3、TW4、單元塔TW5、TW6與索引部3之間的基板搬運距離係彼此大致相等。與此相應地,在作為一對之單元塔TW1、TW2、作為一對之單元塔TW3、TW4以及作為一對之單元塔TW5、TW6中,單元塔TW1、 TW2、單元塔TW3、TW4、單元塔TW5、TW6與索引部3之間的基板搬運時間係大致相等。 The plurality of processing units MPC are distributedly arranged in such a manner as to form a plurality of unit towers TW1 to TW6 (hereinafter collectively referred to as "unit tower TW"). Each unit tower TW is formed by stacking a plurality of processing units MPC into a plurality of layers (four layers in this embodiment). In this embodiment, each unit tower TW is formed by stacking four processing units MPC in the vertical direction. A plurality of unit towers TW are distributed on both sides of the transportation path 5 and are arranged along the transportation path 5. Specifically, in this embodiment, three unit towers TW1, TW3, and TW5 are arranged on one side of the conveyance path 5, and three unit towers TW2, TW4, and TW6 are arranged on the other side of the conveyance path 5. Next, the unit tower TW1 and the unit tower TW2 are a pair and face each other across the conveyance path 5, the unit tower TW3 and the unit tower TW4 are a pair and face each other across the conveyance path 5, the unit tower TW5 and the unit tower The TW6 is a pair and faces the conveying path 5 in a pair. Therefore, in the unit towers TW1, TW2 as a pair, the unit towers TW3, TW4 as a pair, and the unit towers TW5, TW6 as a pair, the unit towers TW1, TW2, unit towers TW3, TW4, unit tower TW5, The board conveyance distance between the TW6 and the index unit 3 is approximately equal to each other. Accordingly, in the unit towers TW1, TW2 as a pair, the unit towers TW3, TW4 as a pair, and the unit towers TW5, TW6 as a pair, the unit tower TW1 The substrate transfer time between TW2, unit towers TW3, TW4, unit towers TW5, TW6, and index unit 3 is approximately equal.
與索引部3相距的距離相等之各對的單元塔TW1、TW2、單元塔TW3、TW4、單元塔TW5、TW6係分別形成處理區劃PZ1、PZ2、PZ3(以下總稱時稱為「處理區劃PZ」)。亦即,在最接近索引部3之位置夾著搬運路徑5相對向的一對單元塔TW1、TW2係形成第一處理區劃PZ1。在下一個接近索引部3的位置夾著搬運路徑5相對向的一對單元塔TW3、TW4係形成第二處理區劃PZ2。在下一個接近索引部3的位置亦即在本實施形態中距離索引部3最遠的位置夾著搬運路徑5相對向的一對單元塔TW5、TW6係形成第三處理區劃PZ3。 Each pair of unit towers TW1, TW2, unit towers TW3, TW4, unit towers TW5, TW6 are formed with processing zones PZ1, PZ2, PZ3 (hereinafter collectively referred to as "processing zone PZ") ). That is, the pair of unit towers TW1 and TW2 facing each other with the conveying path 5 sandwiched at the position closest to the index section 3 form the first processing zone PZ1. A pair of unit towers TW3 and TW4 facing each other with the conveying path 5 sandwiched at the next position close to the index section 3 forms a second processing zone PZ2. A pair of unit towers TW5 and TW6 facing the conveyance path 5 at the next position closest to the index section 3, that is, the position farthest from the index section 3 in this embodiment, forms the third processing zone PZ3.
於第一處理區劃PZ1與索引部3之間配置有第一授受單元PASS1。相對於第一授受單元PASS1中之與索引部3為相反側配置有第一主搬運機器人CR1。第一主搬運機器人CR1係配置於接近第一處理區劃PZ1之位置,更具而言配置於形成第一處理區劃PZ1之一對單元塔TW1、TW2之間的位置。相對於第一主搬運機器人CR1中之與第一授受單元PASS1為相反側配置有第二授受單元PASS2。藉此,第一主搬運機器人CR1係以與第一授受單元PASS1、第一處理區劃PZ1的單元塔TW1、TW2以及第二授受單元PASS2相對向之方式配置。 The first grant unit PASS1 is arranged between the first processing zone PZ1 and the index unit 3. The first main transport robot CR1 is disposed on the opposite side of the index unit 3 in the first transfer unit PASS1. The first main transport robot CR1 is disposed at a position close to the first processing zone PZ1, more specifically, at a position between the pair of unit towers TW1, TW2 forming a first processing zone PZ1. A second transfer unit PASS2 is arranged on the side opposite to the first transfer unit PASS1 in the first main transport robot CR1. As a result, the first main transport robot CR1 is arranged so as to face the unit towers TW1, TW2 of the first receiving unit PASS1, the first processing zone PZ1, and the second receiving unit PASS2.
相對於第二授受單元PASS2中之與第一主搬運機器人CR1為相反側配置有第二主搬運機器人CR2。第二主搬運機器人CR2係配置於接近第二處理區劃PZ2以及第三處理區劃 PZ3之位置,更具體而言配置於被形成第二處理區劃PZ2及第三處理區劃PZ3之兩對的單元塔TW3、TW4單元塔TW5、TW6圍繞的位置。藉此,第二主搬運機器人CR2係以與第二授受單元PASS2以及第二處理區劃PZ2及第三處理區劃PZ3的單元塔TW3至TW6相對向之方式配置。 The second main transport robot CR2 is arranged on the opposite side of the first main transport robot CR1 in the second transfer unit PASS2. The second main transport robot CR2 is disposed close to the second processing zone PZ2 and the third processing zone The position of PZ3 is more specifically arranged at a position surrounded by unit towers TW3, TW4 unit towers TW5, TW6 forming two pairs of the second processing zone PZ2 and the third processing zone PZ3. As a result, the second main transport robot CR2 is arranged to face the unit towers TW3 to TW6 of the second transfer unit PASS2 and the second processing zone PZ2 and the third processing zone PZ3.
在本實施形態中,索引機器人IR為水平多關節手臂型的機器人。索引機器人IR係包含有:手部(hand)11,係保持基板W;多關節手臂12,係結合至手部11;手臂旋轉機構(未圖示),係使多關節手臂12繞著鉛直的旋轉軸線13旋轉;以及手臂升降機構(未圖示),係使多關節手臂12上下動作。藉由此種構成,索引機器人IR係使手部11對被任意的裝載埠LP保持的承載器C以及第一授受單元PASS1進行存取,並相對於該存取的目的地搬入基板W或搬出基板W。藉此,索引機器人IR係在處理部4(更正確而言為第一授受單元PASS1)與任意的承載器C之間搬運基板W。 In this embodiment, the index robot IR is a horizontal articulated arm type robot. The indexing robot IR system includes: a hand 11 which holds the substrate W; a multi-joint arm 12 which is coupled to the hand 11; an arm rotation mechanism (not shown) which makes the multi-joint arm 12 go around the vertical The rotation axis 13 rotates; and the arm lifting mechanism (not shown) causes the multi-joint arm 12 to move up and down. With this configuration, the indexing robot IR causes the hand 11 to access the carrier C held by the arbitrary loading port LP and the first transfer unit PASS1, and to carry the substrate W or out relative to the destination of the access Substrate W. With this, the index robot IR transfers the substrate W between the processing unit 4 (more precisely, the first transfer unit PASS1) and an arbitrary carrier C.
於第一主搬運機器人CR1及第二主搬運機器人CR2能使用具有大致同樣的構成之基板搬運機器人。較佳為此種基板搬運機器人係包含有:一對手部21、22,係保持基板W;一對手部進退機構23、24,係分別使一對手部21、22於水平方向(放射方向)進退;手部旋轉機構(未圖示),係使一對手部進退機構23、24繞著鉛直的旋轉軸線25旋轉;以及手部升降機構(未圖示),係使手部進退機構23、24上下動作。藉此,能以一方的手部21、22從存取的目的地取出基板W,並以另一方的手部21、22將基板W搬入至存取的目的地。藉由 將此種構成的基板搬運機器人應用於第一主搬運機器人CR1,第一主搬運機器人CR1係能使手部21、22對第一授受單元PASS1、用以形成第一處理區劃PZ1的單元塔TW1、TW2之複數個處理單元MPC、以及第二授受單元PASS2直接進行存取,並相對於該存取的目的地搬入基板W或搬出基板W。此外,藉由將此種構成的基板搬運機器人應用於第二主搬運機器人CR2,第二主搬運機器人CR2係能使手部21、22對第二授受單元PASS2以及用以形成第二處理區劃PZ2及第三處理區劃PZ3的單元塔TW3至TW6之複數個處理單元MPC直接進行存取,並相對於該存取的目的地搬入基板W或搬出基板W。 For the first main transfer robot CR1 and the second main transfer robot CR2, a substrate transfer robot having substantially the same configuration can be used. Preferably, such a substrate transport robot includes: a pair of hands 21, 22 to hold the substrate W; a pair of hand advance and retreat mechanisms 23, 24 to advance and retreat a hand 21, 22 in the horizontal direction (radiation direction), respectively ; Hand rotation mechanism (not shown), which rotates a hand forward and backward mechanism 23, 24 around the vertical axis of rotation 25; and hand lift mechanism (not shown), which causes the hand forward and backward mechanism 23, 24 Move up and down. Thereby, the substrate W can be taken out from the access destination with one hand 21 and 22 and the substrate W can be carried into the access destination with the other hand 21 and 22. By The substrate transport robot of such a configuration is applied to the first main transport robot CR1, which enables the hands 21, 22 to pair the first transfer unit PASS1, the unit tower TW1 used to form the first processing zone PZ1 The multiple processing units MPC of TW2 and the second grant unit PASS2 directly access and carry the substrate W in or out of the substrate W relative to the destination of the access. In addition, by applying the substrate transfer robot of such a configuration to the second main transfer robot CR2, the second main transfer robot CR2 enables the hands 21, 22 to pair the second transfer unit PASS2 and to form the second processing zone PZ2 The plurality of processing units MPC of the cell towers TW3 to TW6 of the third processing zone PZ3 directly access and carry the substrate W in or out of the substrate W with respect to the destination of the access.
第一授受單元PASS1及第二授受單元PASS2係具備有:基板載置台15,係暫時地保持基板W。 The first transfer unit PASS1 and the second transfer unit PASS2 are provided with a substrate mounting table 15 that temporarily holds the substrate W.
分別與第一處理區劃PZ1、第二處理區劃PZ2以及第三處理區劃PZ3對應地設置有三個藥液箱CC1、CC2、CC3(藥液供給源,為處理流體供給源的一例,在以下總稱時稱為「藥液箱CC」)。第一藥液箱CC1係對用以形成第一處理區劃PZ1之複數個處理單元MPC供給用以處理基板W之藥液(處理流體的一例)。亦即,第一藥液箱CC1係被第一處理區劃PZ1所含有的複數個處理單元MPC共有。同樣地,第二藥液箱CC2係對用以形成第二處理區劃PZ2之複數個處理單元MPC供給用以處理基板W之藥液。亦即,第二藥液箱CC2係被第二處理區劃PZ2所含有的複數個處理單元MPC共有。再者,同樣地,第三藥液箱CC3係對用以形成第三處理區劃PZ3 之複數個處理單元MPC供給用以處理基板W之藥液。亦即,第三藥液箱CC3係被第三處理區劃PZ3所含有的複數個處理單元MPC共有。 Three chemical liquid tanks CC1, CC2, and CC3 are provided corresponding to the first processing zone PZ1, the second processing zone PZ2, and the third processing zone PZ3 (medical solution supply source, which is an example of the processing fluid supply source. It is called "drug tank CC"). The first chemical liquid tank CC1 supplies a chemical liquid (an example of a processing fluid) for processing the substrate W to the plurality of processing units MPC forming the first processing zone PZ1. That is, the first chemical liquid tank CC1 is shared by the plurality of processing units MPC included in the first processing zone PZ1. Similarly, the second chemical liquid tank CC2 supplies the chemical liquid for processing the substrate W to the plurality of processing units MPC for forming the second processing zone PZ2. That is, the second chemical solution tank CC2 is shared by the plurality of processing units MPC included in the second processing zone PZ2. Furthermore, in the same way, the third chemical liquid tank CC3 is used to form the third processing zone PZ3 A plurality of processing units MPC supplies a chemical solution for processing the substrate W. That is, the third chemical liquid tank CC3 is shared by a plurality of processing units MPC included in the third processing zone PZ3.
在圖1中,雖然第一藥液箱CC1、第二藥液箱CC2以及第三藥液箱CC3係設置於處理部4的一側方,但亦可配置於其他的場所。例如,第一藥液箱CC1、第二藥液箱CC2以及第三藥液箱CC3的一部分或全部亦可配置於與索引部3為相反側的搬運路徑5的端部附近。此外,第一藥液箱CC1、第二藥液箱CC2以及第三藥液箱CC3的一部分或全部亦可配置於比配置有包含有處理單元MPC等之基板處理裝置本體的地面還下方的下部的空間。亦即,為了縮小裝置整體的佔有面積,亦可將藥液箱CC立體性地配置於基板處理裝置本體。 In FIG. 1, although the first chemical liquid tank CC1, the second chemical liquid tank CC2, and the third chemical liquid tank CC3 are provided on one side of the processing unit 4, they may be disposed in other places. For example, part or all of the first chemical liquid tank CC1, the second chemical liquid tank CC2, and the third chemical liquid tank CC3 may be disposed near the end of the conveyance path 5 on the opposite side to the index portion 3. In addition, part or all of the first chemical liquid tank CC1, the second chemical liquid tank CC2, and the third chemical liquid tank CC3 may be disposed at a lower portion below the floor surface of the substrate processing apparatus body including the processing unit MPC, etc. Space. That is, in order to reduce the occupied area of the entire device, the chemical solution tank CC may be three-dimensionally arranged on the substrate processing device body.
圖3係用以說明基板處理裝置1內的藥液配管系統之系統圖。處理單元MPC係包含有:處理腔室(processing chamber)31;處理罩(processing cup)32,係配置於處理腔室31內;自轉夾具(spin chuck)33,係配置於處理罩32內;以及藥液噴嘴34,係用以將藥液供給至基板W。自轉夾具33係構成為以水平姿勢保持處理對象的一片的基板W並使基板W繞著鉛直的旋轉軸線36旋轉。藥液噴嘴34係配置於處理腔室31內,並朝被自轉夾具33保持的基板W的上表面分別噴出藥液及清洗液。從藥液箱CC經由藥液供給配管40對藥液噴嘴34供給藥液。 FIG. 3 is a system diagram for explaining the chemical liquid piping system in the substrate processing apparatus 1. The processing unit MPC includes: a processing chamber 31; a processing cup 32 arranged in the processing chamber 31; a spin chuck 33 arranged in the processing cover 32; and The chemical liquid nozzle 34 is used to supply the chemical liquid to the substrate W. The rotation jig 33 is configured to hold one substrate W to be processed in a horizontal posture and rotate the substrate W about a vertical rotation axis 36. The chemical liquid nozzle 34 is disposed in the processing chamber 31 and discharges the chemical liquid and the cleaning liquid toward the upper surface of the substrate W held by the rotation jig 33, respectively. The chemical liquid is supplied from the chemical liquid tank CC to the chemical liquid nozzle 34 via the chemical liquid supply pipe 40.
藥液箱CC係於每個處理區劃PZ分別設置一個。藥液配管系統係包含有:藥液供給配管40,係用以從藥液箱CC對 處理單元MPC供給藥液。 A chemical liquid tank CC is provided for each processing zone PZ. The medical fluid piping system includes: the medical fluid supply piping 40, which is used to The processing unit MPC supplies the chemical solution.
藥液供給配管40係包含有:主供給路徑41,係跨設於用以構成一個處理區劃PZ之兩個單元塔TW,並配置成門形。主供給路徑41係包含有:立起部41A,係沿著一方的單元塔TW立起;橫渡部41B,係結合至該立起部41A,並在搬運路徑5的上方橫渡至另一方的單元塔TW;以及垂下部41C,係結合至該橫渡部41B,並沿著該另一方的單元塔TW垂下。於藥液箱CC的藥液出口51結合有主供給路徑41的入口部,且於藥液箱CC的藥液返回口52結合有主供給路徑41的出口部。藥液供給配管40係進一步包含有:複數個分歧供給路徑42,係從立起部41A分別分歧至用以構成單元塔TW之複數個處理單元MPC;以及複數個分歧供給路徑43,係從垂下部41C分別分歧至用以構成單元塔TW之複數個處理單元MPC。於各個分歧供給路徑42、43夾設有流量調整閥45、流量計46以及藥液閥47。各個分歧供給路徑42、43的前端係導入至處理單元MPC內,並結合至藥液噴嘴34。流量調整閥45係用以調整流經分歧供給路徑42、43的藥液的流量之閥。流量計46係用以計測流通分歧供給路徑42、43的藥液的流量之裝置。藥液閥47係用以將分歧供給路徑42、43予以開閉從而控制從藥液噴嘴34噴出藥液以及停止從藥液噴嘴34噴出藥液之閥。 The chemical liquid supply piping 40 includes a main supply path 41 that is spanned between two unit towers TW that constitute a processing zone PZ, and is arranged in a gate shape. The main supply path 41 includes: an upright portion 41A, which stands up along one unit tower TW; a crossing portion 41B, which is coupled to the upright portion 41A, and crosses the unit above the transportation path 5 to the other unit The tower TW; and the hanging portion 41C are coupled to the crossing portion 41B and hang down along the other unit tower TW. The chemical liquid outlet 51 of the chemical liquid tank CC is coupled to the inlet portion of the main supply path 41, and the chemical liquid return port 52 of the chemical liquid tank CC is coupled to the outlet portion of the main supply path 41. The chemical liquid supply piping 40 further includes: a plurality of branched supply paths 42 branching from the rising portion 41A to a plurality of processing units MPC constituting the unit tower TW; and a plurality of branched supply paths 43 hanging from the The sections 41C branch into a plurality of processing units MPC that constitute the unit tower TW, respectively. A flow rate adjustment valve 45, a flow meter 46, and a chemical liquid valve 47 are interposed between the branch supply paths 42 and 43. The front ends of the respective branch supply paths 42 and 43 are introduced into the processing unit MPC and are coupled to the chemical liquid nozzle 34. The flow rate adjustment valve 45 is a valve for adjusting the flow rate of the chemical liquid flowing through the branch supply paths 42 and 43. The flow meter 46 is a device for measuring the flow rate of the chemical liquid flowing through the branch supply paths 42 and 43. The chemical liquid valve 47 is a valve for opening and closing the branch supply paths 42 and 43 to control the discharge of the chemical liquid from the chemical liquid nozzle 34 and to stop the discharge of the chemical liquid from the chemical liquid nozzle 34.
藥液箱CC係包含有:藥液槽55,係用以儲留藥液;泵(pump)56,係從藥液槽55汲取藥液並壓送至主供給路徑41;以及溫度調節器(加熱器)58,係夾設於藥液槽55與藥液出口 51之間的藥液路徑57。從藥液槽55被泵56汲取的藥液係通過藥液路徑57及藥液供給配管40供給至處理單元MPC。未被處理單元MPC使用的藥液係通過藥液供給配管40返回至藥液槽55,藉此循環藥液。由於在該藥液的循環路徑夾設有溫度調節器58,因此能藉由驅動泵56並使藥液循環來維持藥液槽55內的藥液的溫度。朝向主供給路徑41之藥液的壓送係除了使用泵56的構成之外,亦可藉由以加壓氣體(例如氮氣等惰性氣體)加壓密閉形狀的藥液槽55的內部之構成來進行。 The liquid medicine tank CC includes: a liquid medicine tank 55 for storing the liquid medicine; a pump 56 for drawing up the liquid medicine from the liquid medicine tank 55 and sending it to the main supply path 41; and a temperature regulator ( Heater) 58, clamped between the chemical liquid tank 55 and the chemical liquid outlet 51的的液液PATH57. The chemical liquid system pumped from the chemical liquid tank 55 by the pump 56 is supplied to the processing unit MPC through the chemical liquid path 57 and the chemical liquid supply piping 40. The chemical solution that is not used by the processing unit MPC is returned to the chemical solution tank 55 through the chemical solution supply pipe 40 to circulate the chemical solution. Since the temperature regulator 58 is interposed in the circulation path of the chemical liquid, the temperature of the chemical liquid in the chemical liquid tank 55 can be maintained by driving the pump 56 and circulating the chemical liquid. The pressure feeding of the chemical solution toward the main supply path 41 is not limited to the configuration using the pump 56, but can also be configured by pressurizing the inside of the closed-shaped chemical solution tank 55 with a pressurized gas (for example, an inert gas such as nitrogen). get on.
圖4係用以說明基板處理裝置1的電性構成之方塊圖。基板處理裝置1係具備有作為控制器的電腦60。電腦60係控制處理單元MPC1至MPC8、處理單元MPC9至MPC16、處理單元MPC17至MPC24、藥液箱CC1、CC2、CC3、主搬運機器人CR1、CR2以及索引機器人IR。電腦60亦可具有個人電腦(personal computer)(FA(Factory Automation;工廠自動化)電腦)的形態。電腦60係具備有控制部61、輸出輸入部62以及記憶部63。控制部61係包含有CPU(Central Processing Unit;中央處理器)等運算單元。輸出輸入部62係包含有顯示單元等輸出機器、鍵盤、指向裝置(pointing device)、觸控面板(touch panel)等輸入機器。再者,輸出輸入部62係包含有用以與屬於外部電腦的主機電腦64進行通訊的通訊模組。記憶部63係包含有固態記憶體裝置(solid-state memory device)、硬碟驅動機(hard disk drive)等記憶裝置。 FIG. 4 is a block diagram for explaining the electrical structure of the substrate processing apparatus 1. The substrate processing apparatus 1 is provided with a computer 60 as a controller. The computer 60 controls the processing units MPC1 to MPC8, the processing units MPC9 to MPC16, the processing units MPC17 to MPC24, the chemical tanks CC1, CC2, CC3, the main transport robots CR1, CR2, and the indexing robot IR. The computer 60 may also be in the form of a personal computer (FA (Factory Automation) computer). The computer 60 includes a control unit 61, an output input unit 62, and a memory unit 63. The control unit 61 includes an arithmetic unit such as a CPU (Central Processing Unit). The input/output unit 62 includes output devices such as a display unit, input devices such as a keyboard, a pointing device, and a touch panel. Furthermore, the input/output unit 62 includes a communication module for communicating with a host computer 64 belonging to an external computer. The memory portion 63 includes a solid-state memory device (hard-state memory device), a hard disk drive (hard disk drive) and other memory devices.
控制部61係包含有排程功能部65以及處理執行指示部 66。排程功能部65係製作用以使基板處理裝置1的資源(resource)依循時間系列作動之計畫(排程),俾用以從承載器C搬出基板W,並以處理單元MPC1至MPC24中的一個以上處理該基板W後,將該處理後的基板W收容於承載器C。處理執行指示部66係依循排程功能部65所製作的排程使基板處理裝置1的資源作動。所謂資源係指基板處理裝置1所具備之用以進行基板的處理所使用之各種單元,具體而言包含有處理單元MPC1至MPC24、索引機器人IR、主搬運機器人CR1、CR2、藥液箱CC1、CC2、CC3以及該等的構成要素。 The control unit 61 includes a scheduling function unit 65 and a process execution instruction unit 66. The scheduling function part 65 is a plan (scheduling) for making the resources of the substrate processing apparatus 1 act according to a time series, so as to carry out the substrate W from the carrier C, and use the processing units MPC1 to MPC24 After processing one or more of the substrates W, the processed substrates W are housed in the carrier C. The processing execution instruction unit 66 activates the resources of the substrate processing apparatus 1 according to the schedule created by the schedule function unit 65. The resource refers to various units included in the substrate processing apparatus 1 for performing substrate processing, and specifically includes processing units MPC1 to MPC24, indexing robot IR, main transport robots CR1, CR2, and chemical tank CC1. CC2, CC3 and their constituent elements.
記憶部63係構成為用以記憶包含有讓控制部61執行之程式70、從主機電腦64接收的製程工作資料(process job data)(製程工作資訊)80、由排程功能部65製作的排程資料81、以及處理單元MPC及處理區劃PZ的使用歷程資料82之各種資料等。 The memory section 63 is configured to memorize the program 70 to be executed by the control section 61, the process job data (process job information) 80 received from the host computer 64, and the schedule created by the schedule function section 65 Process data 81, and various data such as the usage history data 82 of the processing unit MPC and the processing zone PZ.
記憶於記憶部63的程式70係包含有:排程製作程式71,係用以使控制部61作為排程控制功能部65作動;以及處理執行程式72,係用以使控制部61作為處理執行指示部66作動。 The program 70 memorized in the memory part 63 includes: a schedule creation program 71 for actuating the control part 61 as a schedule control function part 65; and a process execution program 72 for the control part 61 as a process execution The instruction section 66 operates.
製程工作資料80係包含有:製程工作(PJ)符號,係賦予至各個基板W;以及配方(recipe),係與製程工作符號建立對應。配方係已定義基板處理內容之資料,並包含有基板處理條件及基板處理順序。更具體而言,包含有基板種類資訊、並行處理單元資訊、使用處理液資訊、處理時間資訊等。基板種類資訊係用以表示處理對象的基板W的種類之資訊。基 板W的種類的具體例係為了製作入製品內所使用之製品基板、為了處理單元MPC的維護(maintenance)等所使用且非使用於製品的製造之非製品基板等。所謂並行處理單元資訊係指用以指定可使用的處理單元MPC之處理單元指定資訊,並表示可進行被指定的處理單元MPC所為之並行處理。亦即,只要能以指定的處理單元中的任一者處理基板W即可。所謂使用處理液資訊係指用以指定為了基板處理所使用的處理液的種類之資訊。具體例係用以指定藥液的種類及藥液的溫度之資訊。所謂處理時間資訊係用以供給處理液之持續時間等。使用處理液資訊及處理時間資訊係處理條件資訊的例子。 The process work data 80 includes: a process work (PJ) symbol, which is assigned to each substrate W; and a recipe, which corresponds to the process work symbol. The recipe is the data that defines the content of substrate processing, and includes the substrate processing conditions and substrate processing sequence. More specifically, it includes substrate type information, parallel processing unit information, used processing liquid information, processing time information, and so on. The substrate type information is information indicating the type of the substrate W to be processed. base Specific examples of the type of the board W are non-product substrates that are used for manufacturing product substrates used in products, used for maintenance of the processing unit MPC, and are not used for manufacturing products. The so-called parallel processing unit information refers to the processing unit designation information used to designate the usable processing unit MPC, and indicates that the parallel processing that the designated processing unit MPC can be performed. That is, as long as the substrate W can be processed by any one of the designated processing units. The used processing liquid information refers to information for specifying the type of processing liquid used for substrate processing. Specific examples are information used to specify the type of chemical liquid and the temperature of the chemical liquid. The so-called processing time information is used to provide the duration of the processing liquid. The processing liquid information and processing time information are examples of processing condition information.
所謂製程工作係指對應施予共通的處理的一片或複數片基板W所進行之該處理。所謂製程工作符號係用以識別製程工作之識別資訊(基板群識別資訊)。亦即,對被賦予共通的製程工作符號的複數片基板W施予與該製程工作符號建立對應的配方所為之共通的處理。例如,在對處理順序(從承載器C的取出順序)連續的複數片基板W施予共通的處理時,對這些複數片基板W賦予共通的製程工作符號。然而,也會有與不同的製程工作符號對應的基板處理內容(配方)為相同之情形。 The so-called process work refers to the processing performed on one or a plurality of substrates W subjected to common processing. The so-called process work symbol is the identification information (substrate group identification information) used to identify the process work. That is, the plurality of substrates W to which the common process work symbol is given are subjected to a process common to the recipes corresponding to the process work symbol. For example, when a common process is applied to a plurality of substrates W in which the processing order (the order of taking out from the carrier C) is continuous, a common process work symbol is given to the plurality of substrates W. However, there may be cases where the substrate processing contents (recipes) corresponding to different process work symbols are the same.
控制部61係從主機電腦64經由輸出輸入部62取得針對各個基板W的製程工作資料並記憶至記憶部63。製程工作資料的取得及記憶只要在執行針對各個基板W的排程之前進行即可。例如,亦可在承載器C被保持在裝載埠LP1至LP4 後,立即從主機電腦64對控制部61賦予與被收容於該承載器C的基板W對應之製程工作資料。排程功能部65係依據儲存於記憶部63的製程工作資料80計畫各個製程工作,並將用以表示該計畫之排程資料81儲存於記憶部63。處理執行指示部66係依據儲存於記憶部63的排程資料81控制索引機器人IR、主搬運機器人CR1、CR2、處理單元MPC1至MPC24以及藥液箱CC1、CC2、CC3,藉此使基板處理裝置1執行製程工作。 The control unit 61 acquires process work data for each substrate W from the host computer 64 via the output input unit 62 and stores it in the memory unit 63. The process work data can be acquired and memorized only before the schedule for each substrate W is executed. For example, the carrier C can also be held at the loading ports LP1 to LP4 Immediately after, the host computer 64 immediately gives the control unit 61 the process work data corresponding to the substrate W housed in the carrier C. The scheduling function part 65 plans each process work based on the process work data 80 stored in the memory part 63, and stores the schedule data 81 representing the plan in the memory part 63. The processing execution instruction part 66 controls the index robot IR, the main transfer robots CR1, CR2, the processing units MPC1 to MPC24, and the chemical tanks CC1, CC2, and CC3 according to the schedule data 81 stored in the memory part 63, thereby enabling the substrate processing apparatus 1 Perform process work.
從各個處理單元MPC對控制部61輸入流量計46的輸出訊號。藉此,控制部61係監視是否在各個處理單元MPC中噴出適當流量的藥液。此外,控制部61係將各個處理單元MPC的藥液閥47予以開閉。藉此,控制部61係控制各個處理單元MPC中的藥液的噴出。此外,為了預防流量計46中的氣泡溶入,控制部61係定期性地或者因應來自輸出輸入部62的指示輸入執行氣泡去除處理。為了進行該氣泡去除處理,控制部61係將處理單元MPC的藥液閥47予以開閉。 The output signal of the flow meter 46 is input to the control unit 61 from each processing unit MPC. With this, the control unit 61 monitors whether or not a proper flow of chemical solution is discharged in each processing unit MPC. In addition, the control unit 61 opens and closes the chemical liquid valve 47 of each processing unit MPC. Thereby, the control part 61 controls the discharge of the chemical liquid in each processing unit MPC. In addition, in order to prevent the bubbles from entering the flowmeter 46, the control unit 61 performs the bubble removal process periodically or in response to an instruction input from the output input unit 62. In order to perform this bubble removal process, the control unit 61 opens and closes the chemical liquid valve 47 of the processing unit MPC.
圖5係用以說明流量計46的構成例之示意性的剖視圖。在此例子中,流量計46為超音波流量計。流量計46係包含有配置於分歧供給路徑42、43的外周面之第一感測器91及第二感測器92。第一感測器91及第二感測器92係沿著分歧供給路徑42、43的流路90的流動方向隔著間隔配置,且以夾著流路相對向之方式配置。第一感測器91及第二感測器92係例如由能產生及接收超音波之壓電元件所構成。亦即,第一感測器91係能產生超音波,且由第二感測器92檢測該 超音波。反之,第二感測器92能產生超音波,且由第一感測器91檢測該超音波。計測從第一感測器91產生超音波後直至第二感測器92檢測該超音波為止之時間α 1。此外,檢測從第二感測器92產生超音波後直至第一感測器91檢測該超音波為止之時間α 2。在流路90中的流體於靜止時彼此相等且流路90中的流體具有有意義的流速V之情形中,時間α 1、α 2係依存於該流速V而不同。因此,能藉由計測時間α 1、α 2來求出流路90中的流量。 FIG. 5 is a schematic cross-sectional view for explaining a configuration example of the flow meter 46. In this example, the flow meter 46 is an ultrasonic flow meter. The flow meter 46 includes a first sensor 91 and a second sensor 92 arranged on the outer peripheral surfaces of the branched supply paths 42 and 43. The first sensor 91 and the second sensor 92 are arranged along the flow direction of the flow path 90 of the branched supply paths 42 and 43 with an interval therebetween, and are arranged so as to face each other across the flow path. The first sensor 91 and the second sensor 92 are composed of, for example, piezoelectric elements capable of generating and receiving ultrasonic waves. That is, the first sensor 91 can generate ultrasonic waves, and the second sensor 92 detects this Ultrasound. On the contrary, the second sensor 92 can generate ultrasonic waves, and the first sensor 91 detects the ultrasonic waves. The time α 1 after the ultrasonic wave is generated by the first sensor 91 until the ultrasonic wave is detected by the second sensor 92 is measured. In addition, the time α 2 after the generation of the ultrasonic wave by the second sensor 92 until the detection of the ultrasonic wave by the first sensor 91 is detected. In the case where the fluids in the flow path 90 are equal to each other at rest and the fluids in the flow path 90 have a meaningful flow velocity V, the times α1 and α2 are different depending on the flow velocity V. Therefore, the flow rate in the flow path 90 can be obtained by measuring the times α1 and α2.
超音波的傳遞速度係依存於佔有流路90之流體的種類。亦即,只要以藥液充滿流路90整體,即能藉由計測時間α 1、α 2來求出正確的流量。另一方面,當氣泡93被流路90捕捉時,亦即產生所謂的氣泡溶入時,即無法求出正確的流量。 The transmission speed of ultrasonic waves depends on the type of fluid occupying the flow path 90. That is, as long as the entire flow path 90 is filled with the chemical solution, the correct flow rate can be obtained by measuring the time α1, α2. On the other hand, when the bubble 93 is caught by the flow path 90, that is, when so-called bubble dissolution occurs, the correct flow rate cannot be obtained.
由於此種氣泡溶入係代表成為異常的流量值,因此電腦60能藉由監視流量計46的輸出訊號來檢測流量計46中的氣泡溶入。當電腦60檢測出氣泡溶入時,會發出警報。例如,電腦60係將警報顯示輸出至輸出輸入部62的顯示器。 Since this bubble dissolution system represents an abnormal flow value, the computer 60 can detect the bubble dissolution in the flow meter 46 by monitoring the output signal of the flow meter 46. When the computer 60 detects the dissolution of air bubbles, it will issue an alarm. For example, the computer 60 outputs the alarm display to the display of the output input unit 62.
在已輸出此種警報顯示之情形中,需要藉由將大流量的藥液壓送至已產生氣泡溶入的流路90來推出流路90內的氣泡93。具體而言,作業者係藉由操作輸出輸入部62來執行下述順序。 In the case where such an alarm display has been output, it is necessary to push out the bubbles 93 in the flow path 90 by sending a large flow of medicine hydraulic pressure to the flow path 90 in which bubbles have been dissolved. Specifically, the operator performs the following procedure by operating the output input unit 62.
順序1:停止基板處理運轉。 Sequence 1: Stop the substrate processing operation.
順序2:從與已產生氣泡溶入的流量計46對應之處理單元MPC取出處理途中的基板W。 Step 2: The substrate W in the process is taken out from the processing unit MPC corresponding to the flow meter 46 in which bubbles have been dissolved.
順序3:將連接至所有處理單元MPC的藥液噴嘴34之藥液閥47關閉。 Sequence 3: The chemical liquid valve 47 of the chemical liquid nozzle 34 connected to all the processing units MPC is closed.
順序4:將與已產生氣泡溶入的流量計46對應之藥液閥47開啟。 Sequence 4: The chemical liquid valve 47 corresponding to the flow meter 46 in which bubbles have been dissolved is opened.
藉此,從藥液箱CC朝一個處理單元MPC的分歧供給路徑42、43壓送藥液,該藥液係通過已產生氣泡溶入的流量計46的流路並從藥液噴嘴34噴出。藉此,流量計46的流路90內的氣泡93係與藥液一起朝藥液噴嘴34流動並排出。 As a result, a chemical solution is pressure-fed from the chemical solution tank CC to the branch supply paths 42 and 43 of one processing unit MPC, and the chemical solution is discharged from the chemical solution nozzle 34 through the flow path of the flow meter 46 in which bubbles are generated. As a result, the bubbles 93 in the flow path 90 of the flow meter 46 flow along with the chemical liquid toward the chemical liquid nozzle 34 and are discharged.
之後,作業者係將以順序4開啟的藥液閥47關閉,並再次開啟基板處理裝置1的通常運轉。 After that, the operator closes the chemical liquid valve 47 opened in sequence 4 and reopens the normal operation of the substrate processing apparatus 1.
在此種順序中,需要進行用以停止基板處理運轉並去除氣泡93之作業。因此,由於停止全部的處理單元MPC的處理,故降低基板處理裝置1的稼動率。此外,亦有以順序2取出的基板W成為無用之虞。 In such a sequence, an operation to stop the substrate processing operation and remove bubbles 93 is required. Therefore, since the processing of all the processing units MPC is stopped, the utilization rate of the substrate processing apparatus 1 is reduced. In addition, there is a possibility that the substrate W taken out in order 2 becomes useless.
因此,在本實施形態中,無須等待警報,亦即不論流量計46有無異常,皆預防性地進行用以去除藥液供給配管40內的氣泡尤其是從流量計46的流路去除氣泡之氣泡去除處理。 Therefore, in the present embodiment, there is no need to wait for an alarm, that is, whether or not the flowmeter 46 is abnormal or not, it is performed preventively to remove air bubbles in the chemical liquid supply pipe 40, especially to remove air bubbles from the flow path of the flow meter 46 Removal processing.
圖6及圖7係用以說明排程功能部65所為之處理例之流程圖。更具體而言,表現出藉由控制部61(電腦60)執行排程製作程式71而以預定的控制週期反覆進行之處理。換言之,於排程製作程式71組入有步驟群,俾用以使電腦60執行圖6及圖7所示的處理。 6 and 7 are flowcharts for explaining processing examples performed by the scheduling function 65. More specifically, the control unit 61 (computer 60) executes the schedule creation program 71 and repeats the processing in a predetermined control cycle. In other words, a step group is incorporated in the schedule creation program 71 to enable the computer 60 to execute the processing shown in FIGS. 6 and 7.
主機電腦64係將製程工作資料賦予給控制部61,並指 示開始該製程工作資料所定義的製程工作,亦即指示開始基板處理。控制部61係接收該製程工作資料並儲存至記憶部63。排程功能部65係使用該製程工作資料進行用以執行製程工作之排程。製程工作的開始亦可由作業者操作輸出輸入部62的操作部進行指示。再者,主機電腦64係例如以一定時間間隔指示開始用以預防流量計46的氣泡溶入之氣泡去除處理。該氣泡去除處理的開始亦可由作業者操作輸出輸入部62的操作部進行指示。或者,亦能在電腦60依據流量計46的輸出訊號檢測出氣泡溶入時從電腦60指示開始氣泡去除處理。 The host computer 64 assigns the process work data to the control unit 61, and instructs It indicates that the process work defined in the process work data is started, that is, the substrate processing is started. The control part 61 receives the process work data and stores it in the memory part 63. The scheduling function 65 uses the process work data to perform scheduling for executing the process work. The start of the process work can also be instructed by the operator by operating the operation unit of the output input unit 62. In addition, the host computer 64 instructs to start the bubble removal process to prevent the bubbles of the flowmeter 46 from dissolving, for example, at a certain time interval. The start of this bubble removal process may be instructed by the operator by operating the operation unit of the output input unit 62. Alternatively, the computer 60 can instruct the computer 60 to start the bubble removal process when the computer 60 detects that the bubble is dissolved based on the output signal of the flow meter 46.
如圖6所示,排程功能部65係在存在指示輸入時(步驟S1),判斷被賦予的指示是基板處理(製程工作)還是氣泡去除處理(步驟S2)。當為基板處理時,判斷是否已經存在有指示接受完畢的氣泡去除處理(步驟S3)。當存在有指示接受完畢的氣泡去除處理時(步驟S3:是),排程功能部65係計畫氣泡去除處理(步驟S4),並於之後執行用以進行基板處理(製程工作)之計畫(步驟S5)。另一方面,當被賦予的指示為氣泡去除處理時(步驟S2),首先先接受指示再判斷是否存在有計畫中的基板處理(步驟S6)。當無計畫中的基板處理時(步驟S6:否),開始氣泡去除處理的排程(步驟S4)。當存在有計畫中的基板處理時(步驟S6:是),直至該基板處理的排程結束為止進行待機(步驟S7),並於之後進行氣泡去除處理的排程(步驟S4)。藉由此種處理,能以避免與基板處理動作產生干擾之方式計畫氣泡去除處理。結束氣泡去除處理的排程後,處理執 行指示部66係執行該計畫的氣泡去除處理(步驟S8);同樣地,在結束基板處理的排程時,處理執行指示部66係執行該計畫的基板處理(步驟S9)。 As shown in FIG. 6, when there is an instruction input (step S1 ), the scheduling function unit 65 determines whether the given instruction is substrate processing (process work) or bubble removal processing (step S2 ). In the case of substrate processing, it is determined whether or not there is already a bubble removal process indicating completion of the acceptance (step S3). When there is a bubble removal process indicating that the acceptance is completed (step S3: YES), the scheduling function unit 65 plans the bubble removal process (step S4), and then executes a plan for substrate processing (process work) (Step S5). On the other hand, when the given instruction is the bubble removal process (step S2), the instruction is first received and then it is determined whether there is a planned substrate process (step S6). When there is no planned substrate processing (step S6: No), the schedule of the bubble removal process is started (step S4). When there is a planned substrate processing (step S6: YES), it waits until the end of the substrate processing schedule (step S7), and then the air bubble removal processing schedule (step S4). With this process, the bubble removal process can be planned in a manner that avoids interference with the substrate processing operation. After finishing the air bubble removal processing schedule, the processing execution The line instruction unit 66 executes the bubble removal process of the plan (step S8); similarly, when the schedule of the substrate processing is ended, the process execution instruction unit 66 executes the substrate process of the plan (step S9).
圖7係顯示基板處理的計畫的詳細流程。排程功能部65係針對與製程工作資料對應的基板W逐片地依序執行排程。首先,排程功能部65係參照與製程工作資料對應的配方,並依據該配方的並行處理單元資訊特定可使用於基板W的處理之一個以上的處理單元MPC(步驟S51)。接著,排程功能部65係執行用以選擇應使用於基板處理的一個處理區劃PZ之處理區劃選擇處理(步驟S52)。例如,在處理區劃選擇處理中,以均等地選擇複數個處理區劃PZ1、PZ2、PZ3之方式選擇任一個處理區劃PZ。此外,在步驟S52中,亦可以用以執行基板處理之處理區劃PZ不會與氣泡去除處理執行中的處理區劃PZ產生干擾之方式選擇應使用於基板處理之一個處理區劃PZ(詳細係使用圖11A及圖11B,於後述之)。 FIG. 7 shows a detailed flow of the substrate processing plan. The scheduling function part 65 performs the scheduling for the substrate W corresponding to the process work data one by one in sequence. First, the scheduling function unit 65 refers to the recipe corresponding to the process work data, and specifies one or more processing units MPC that can be used for the processing of the substrate W based on the parallel processing unit information of the recipe (step S51). Next, the scheduling function section 65 executes a processing zone selection process for selecting one processing zone PZ that should be used for substrate processing (step S52). For example, in the processing division selection processing, any one of the processing divisions PZ is selected in such a manner that the plurality of processing divisions PZ1, PZ2, and PZ3 are equally selected. In addition, in step S52, it is also possible to select a processing zone PZ that should be used for substrate processing in such a manner that the processing zone PZ for performing substrate processing does not interfere with the processing zone PZ during the execution of the bubble removal process 11A and FIG. 11B, described later).
接著,排程功能部65係製作用以處理一片基板W之暫時時間表(步驟S53)。例如,作成在處理區劃選擇處理中選擇第一處理區劃PZ1,且於與製程工作資料對應之配方的並行處理單元資訊包含有第一處理區劃PZ1的全部的處理單元MPC1至MPC8。亦即,考量依循該配方的基板處理亦能在八個處理單元MPC1至MPC8的任一者中執行的情形。該情形中,該基板W為了接受處理所通過的路徑為八條。亦即,為了進行該基板W的處理所能選擇的路徑係通過處理單元MPC1至MPC8的任一者之八個路徑。因此,排程功能部65 係對該一片基板W製作與該八個路徑對應的暫時時間表。 Next, the scheduling function unit 65 creates a temporary schedule for processing one substrate W (step S53). For example, the first processing zone PZ1 is selected in the processing zone selection process, and the parallel processing unit information of the recipe corresponding to the process work data includes all the processing units MPC1 to MPC8 of the first processing zone PZ1. That is, it is considered that the substrate processing according to the recipe can be executed in any of the eight processing units MPC1 to MPC8. In this case, there are eight paths through which the substrate W passes for processing. That is, the paths that can be selected for processing the substrate W are eight paths that pass through any one of the processing units MPC1 to MPC8. Therefore, the scheduling function 65 A temporary schedule corresponding to the eight paths is produced for this piece of substrate W.
圖8A係顯示與通過處理單元MPC1之路徑對應的暫時時間表。該暫時時間表係包含有:區塊B1,係表示藉由索引機器人IR從承載器C搬出(Get)基板W;區塊B2,係表示藉由索引機器人IR將該基板W搬入(Put)至第一授受單元PASS1;區塊B3,係表示藉由第一主搬運機器人CR1從第一授受單元PASS1搬出(Get)該基板W;區塊B4,係表示藉由第一主搬運機器人CR1將該基板W搬入(Put)至處理單元MPC1;處理區塊B5,係表示藉由處理單元MPC1對該基板W進行處理;區塊B6,係表示藉由第一搬運機器人CR1從處理單元MPC1搬出(Get)處理完畢的基板W;區塊B7,係表示藉由第一主搬運機器人CR1將該基板W搬入(Put)至第一授受單元PASS1;區塊B8,係表示藉由索引機器人IR將該基板W從第一授受單元PASS1搬出(Get);以及區塊B9,係表示藉由索引機器人IR將該基板W搬入(Put)至承載器C。排程功能部65係以在時間軸上不會彼此重疊之方式依序地配置這些區塊,藉此製作暫時時間表。再者,圖8A的暫時時間表係包含有:藥液供給區塊B10,係表示在配置有處理區塊B5的期間中的預定的藥液處理期間中從第一藥液箱CC1供給藥液。 FIG. 8A shows a temporary schedule corresponding to the path through the processing unit MPC1. The temporary timetable includes: block B1, which means that the substrate W is removed from the carrier C by the index robot IR; block B2, which means that the substrate W is put (Put) by the index robot IR to The first transfer unit PASS1; block B3, which means that the substrate W is carried out (Get) from the first transfer unit PASS1 by the first main transfer robot CR1; block B4, which means that the first main transfer robot CR1 The substrate W is put into the processing unit MPC1; the processing block B5 indicates that the substrate W is processed by the processing unit MPC1; the block B6 indicates that the first transport robot CR1 is removed from the processing unit MPC1 (Get ) The processed substrate W; block B7, which means that the substrate W is put into the first transfer unit PASS1 by the first main transport robot CR1; block B8, which means the substrate is used by the index robot IR W is taken out (Get) from the first grant unit PASS1; and block B9 means that the substrate W is put into the carrier C by the index robot IR. The scheduling function unit 65 sequentially arranges these blocks so as not to overlap each other on the time axis, thereby creating a temporary schedule. In addition, the temporary schedule of FIG. 8A includes: a chemical solution supply block B10, which indicates that the chemical solution is supplied from the first chemical solution tank CC1 during a predetermined chemical solution processing period in the period in which the processing block B5 is disposed .
詳細說明處理區塊B5,處理區塊B5係包含有例如以下的複數個步驟。例如包含有下述步驟等:基板固定步驟,係將藉由第一主搬運機器人CR1(或第二主搬運機器人CR2)搬運至處理單元MPC之基板W固定至自轉夾具33(參照圖3); 從藥液噴嘴34朝固定至自轉夾具33的基板W供給從藥液箱CC汲取的藥液之步驟;置換步驟,係將藥液置換成清洗液;乾燥步驟,係使清洗液乾燥;以及固定解除步驟,係解除自轉夾具33對於基板W的固定。如此,由於處理區塊B5包含有藥液供給步驟以外的步驟,因此相較於藥液供給區塊B10,處理區塊B5的時間性較短。此外,由於在藥液供給區塊B10之前執行基板固定步驟等,因此藥液供給區塊B10係從處理區塊B5開始後延遲預定時間才開始。 The processing block B5 is described in detail. The processing block B5 includes, for example, the following plural steps. For example, the following steps are included: the substrate fixing step is to fix the substrate W transferred to the processing unit MPC by the first main transfer robot CR1 (or the second main transfer robot CR2) to the rotation jig 33 (refer to FIG. 3); The step of supplying the chemical liquid drawn from the chemical liquid tank CC from the chemical liquid nozzle 34 to the substrate W fixed to the rotation jig 33; the replacement step is to replace the chemical liquid with the cleaning liquid; the drying step is to dry the cleaning liquid; and fixing In the releasing step, the fixation of the substrate W by the rotation jig 33 is released. In this way, since the processing block B5 includes steps other than the chemical solution supply step, the time of the processing block B5 is shorter than that of the chemical solution supply block B10. In addition, since the substrate fixing step and the like are performed before the chemical liquid supply block B10, the chemical liquid supply block B10 is delayed from the start of the processing block B5 by a predetermined time.
雖然圖式中省略,但是排程功能部65係對相同的基板W製作與分別通過處理單元MPC2至MPC8之路徑對應之同樣的暫時時間表(已將處理區塊分別配置於處理單元MPC2至MPC8之暫時時間表)。如此,對一片基板W製作合計八條路徑分的暫時時間表。 Although omitted from the figure, the scheduling function 65 creates the same temporary schedule corresponding to the paths passing through the processing units MPC2 to MPC8 for the same substrate W (processing blocks have been arranged in the processing units MPC2 to MPC8, respectively) Temporary schedule). In this way, a temporary timetable for a total of eight paths is produced for one substrate W.
所製作的暫時時間表係作為排程資料81的一部分儲存至記憶部63。在暫時時間表的製作階段中,未考慮與關於其他基板W的區塊之間的干擾(在時間軸上彼此重疊)。 The created temporary schedule is stored in the memory 63 as part of the schedule data 81. In the production stage of the temporary schedule, the interference with the blocks on other substrates W (overlapping each other on the time axis) is not considered.
排程功能部65係在製作完與一片基板W對應之全部的暫時時間表後(步驟S54),執行正式排程(步驟S55至步驟S58)。所謂正式排程係指將所製作的暫時時間表的區塊以不會與各個資源的其他的區塊重複之方式配置於時間軸上。其中,由於藥液箱CC係具備有能將藥液供給至所對應的處理區劃PZ的全部的處理單元MPC之能力,因此允許藥液供給區塊重複配置於藥液箱CC。藉由正式排程所製作的排程資料係儲存於記憶部63。 The schedule function unit 65 executes the official schedule (step S55 to step S58) after all temporary schedules corresponding to one substrate W have been created (step S54). The so-called formal scheduling refers to arranging the blocks of the created temporary schedule on the time axis so as not to overlap with other blocks of each resource. Among them, since the chemical solution tank CC is equipped with the ability to supply the chemical solution to all the processing units MPC of the corresponding processing zone PZ, the chemical solution supply block is allowed to be repeatedly arranged in the chemical solution tank CC. The schedule data created by the official schedule is stored in the memory 63.
更具體地說明,排程功能部65係選擇與該基板W對應且製作完畢的複數個暫時時間表中的一個,並取得一個用以構成該暫時時間表之區塊(步驟S55)。此時所取得的區塊係未配置的區塊中之配置於暫時時間表的時間軸上最早的位置之區塊。再者,排程功能部65係檢索能配置所取得的該區塊之位置(步驟S56),並將該區塊配置於該檢索的位置(步驟S57)。各個區塊係作成同一個資源不會在相同的時間重複使用,並配置於時間軸上最早的位置。同樣的動作係針對用以構成所選擇的暫時時間表之全部的區塊反覆執行(步驟S58)。如此,配置了用以構成所選擇的暫時時間表之全部的區塊,藉此結束與該暫時時間表對應之正式排程。該正式排程係針對所製作的全部的暫時時間表予以執行(步驟S59)。亦即,針對作成以存在有用以處理該基板W之可能性的處理單元MPC1至MPC8處理基板W之全部的情形,亦即針對八條路徑之情形執行正式排程。 More specifically, the scheduling function unit 65 selects one of the plurality of temporary schedules corresponding to the substrate W and has been completed, and obtains a block for constituting the temporary schedule (step S55). The block obtained at this time is the block arranged at the earliest position on the time axis of the temporary schedule among the unallocated blocks. Furthermore, the scheduling function unit 65 searches for the position where the obtained block can be arranged (step S56), and arranges the block at the searched position (step S57). Each block is made of the same resource and will not be reused at the same time, and is arranged at the earliest position on the time axis. The same action is repeated for all the blocks that constitute the selected temporary schedule (step S58). In this way, all the blocks that constitute the selected temporary schedule are configured, thereby ending the official schedule corresponding to the temporary schedule. This official schedule is executed for all the created temporary schedules (step S59). That is, for the case where the processing units MPC1 to MPC8 made with the possibility of being useful to process the substrate W process all of the substrate W, that is, the formal scheduling is performed for the case of eight paths.
當結束該八條路徑的正式排程時,進行處理單元選擇處理(步驟S60)。在處理單元選擇處理中,選擇一個正式排程,亦即選擇通過一個處理單元MPC之正式排程,藉此選擇用以處理一片基板W之處理單元MPC。在處理單元選擇處理中,選擇用以處理該基板W並返回至承載器C之時刻最早的一個正式排程。若在存在基板W返回至承載器C之時刻相等之複數個正式排程時,選擇使用距離前次的使用之使用間隔最長之處理單元MPC,亦即選擇單元最後使用時刻最古老的處理單元MPC之正式排程。藉此,能以均等地使用一個處理區 劃PZ內的處理單元MPC之方式選擇處理單元MPC。 When the official schedule of the eight routes is ended, a processing unit selection process is performed (step S60). In the processing unit selection process, a formal schedule is selected, that is, a formal schedule through a processing unit MPC is selected, thereby selecting a processing unit MPC for processing one substrate W. In the processing unit selection process, the earliest official schedule for processing the substrate W and returning to the carrier C is selected. If there are a plurality of official schedules equal to the time when the substrate W returns to the carrier C, the processing unit MPC with the longest use interval from the previous use is selected, that is, the oldest processing unit MPC with the last use time of the selection unit is selected The official schedule. By this, one processing area can be used equally Select the processing unit MPC by dividing the processing unit MPC in PZ.
如此,當選擇與一個暫時時間表對應之一個正式排程時,完成與該一片基板W對應之排程。接著,用以表示所選擇的正式排程之排程資料係儲存於記憶部63。處理執行指示部66係在之後的任意的時序(timing)實際地開始與該基板W對應之處理(步驟S62)。亦即,開始基板搬運動作,該基板搬運動作係藉由索引機器人IR從承載器C搬出基板W,並藉由主搬運機器人CR1、CR2將基板W搬運至處理單元MPC。 In this way, when a formal schedule corresponding to a temporary schedule is selected, the schedule corresponding to the one piece of substrate W is completed. Next, the schedule data indicating the selected official schedule is stored in the memory 63. The process execution instruction unit 66 actually starts the process corresponding to the substrate W at any subsequent timing (step S62). That is, the substrate transfer operation is started. The substrate transfer operation transfers the substrate W from the carrier C by the index robot IR, and transfers the substrate W to the processing unit MPC by the main transfer robots CR1 and CR2.
同樣的動作係依序對用以構成製程工作之全部的基板W執行(步驟S61)。 The same operation is sequentially performed on all the substrates W constituting the process work (step S61).
當在處理區劃選擇處理(步驟S52)中選擇第二處理區劃PZ2時,排程功能部65係對一片基板W製作與分別通過處理單元MPC9至MPC16之路徑對應的暫時時間表(已將處理區塊分別配置於處理單元MPC9至MPC16之暫時時間表)。藉此,對一片基板W製作合計八條路徑分的暫時時間表。圖8B係顯示與通過處理單元MPC9之路徑對應的暫時時間表。該暫時時間表係包含有:區塊B1,係表示藉由索引機器人IR從承載器C搬出(Get)基板W;區塊B2,係表示藉由索引機器人IR將該基板W搬入(Put)至第一授受單元PASS1;區塊B3,係表示藉由第一主搬運機器人CR1從第一授受單元PASS1搬出(Get)該基板W;區塊B11,係表示藉由第一主搬運機器人CR1將該基板W搬入(Put)至第二授受單元PASS2;區塊B12,係表示藉由第二主搬運機器人CR2從第二授受單元PASS2搬出(Get)該基板W;區塊B13,係表示藉由第二主 搬運機器人CR2將該基板W搬入(Put)至處理單元MPC9;處理區塊B5,係表示藉由處理單元MPC9對該基板W進行處理;區塊B14,係表示藉由第二主搬運機器人CR2從處理單元MPC9搬出(Get)處理完畢的基板W;區塊B15,係表示藉由第二主搬運機器人CR2將該基板W搬入(Put)至第二授受單元PASS2;區塊B16,係表示藉由第一主搬運機器人CR1將該基板W從第二授受單元PASS2搬出(Get);區塊B7,係表示藉由第一主搬運機器人CR1將該基板W搬入(Put)至第一授受單元PASS1;區塊B8,係表示藉由索引機器人IR將基板W從第一授受單元PASS1搬出(Get);以及區塊B9,係表示藉由索引機器人IR將該基板W搬入(Put)至承載器C。排程功能部65係以不會在時間軸上彼此重疊之方式依序配置這些區塊,藉此製作暫時時間表。再者,圖8B的暫時時間表係包含有:藥液供給區塊B10,係表示在配置有處理區塊的期間中的預定的藥液處理期間中從第二藥液箱CC2供給藥液。 When the second processing zone PZ2 is selected in the processing zone selection process (step S52), the scheduling function unit 65 creates a temporary schedule corresponding to the paths passing through the processing units MPC9 to MPC16, respectively, The blocks are respectively allocated to the temporary schedules of the processing units MPC9 to MPC16). With this, a temporary timetable for a total of eight paths is produced for one substrate W. FIG. 8B shows a temporary schedule corresponding to the path through the processing unit MPC9. The temporary timetable includes: block B1, which means that the substrate W is removed from the carrier C by the index robot IR; block B2, which means that the substrate W is put (Put) by the index robot IR to The first transfer unit PASS1; block B3, which means that the substrate W is carried out (Get) from the first transfer unit PASS1 by the first main transfer robot CR1; block B11, which means that the first main transfer robot CR1 The substrate W is put into the second grant unit PASS2; block B12 indicates that the substrate W is removed from the second grant unit PASS2 by the second main transfer robot CR2; block B13 indicates that the Second master The transfer robot CR2 puts the substrate W into the processing unit MPC9; the processing block B5 indicates that the substrate W is processed by the processing unit MPC9; the block B14 indicates that the second master transfer robot CR2 The processing unit MPC9 carries out (Get) the processed substrate W; the block B15 indicates that the substrate W is transferred (Put) to the second grant unit PASS2 by the second main transport robot CR2; the block B16 indicates that the The first main transport robot CR1 transfers (Get) the substrate W from the second transfer unit PASS2; Block B7 indicates that the first main transfer robot CR1 transfers (Put) the substrate W to the first transfer unit PASS1; Block B8 indicates that the substrate W is removed from the first transfer unit PASS1 by the index robot IR; and block B9 indicates that the substrate W is put into the carrier C by the index robot IR. The scheduling function part 65 arranges these blocks in sequence so as not to overlap each other on the time axis, thereby creating a temporary schedule. In addition, the temporary schedule in FIG. 8B includes a chemical solution supply block B10, which indicates that the chemical solution is supplied from the second chemical solution tank CC2 during a predetermined chemical solution processing period in the period in which the processing block is arranged.
當在處理區劃選擇處理(步驟S52)中選擇第三處理區劃PZ3時,排程功能部65係對一片基板W製作與分別通過處理單元MPC17至MPC24之路徑對應的暫時時間表(已將處理區塊分別配置於處理單元MPC17至MPC24之暫時時間表)。藉此,對一片基板W製作合計八條路徑分的暫時時間表。圖8C係顯示與通過處理單元MPC17之路徑對應的暫時時間表。該暫時時間表係與圖8B的暫時時間表大致同樣。其中,不同點為:通過處理單元MPC17;以及於第三藥液箱CC3配置 有用以表示藥液供給之藥液供給區塊。 When the third processing zone PZ3 is selected in the processing zone selection process (step S52), the scheduling function unit 65 creates a temporary schedule corresponding to the paths passing through the processing units MPC17 to MPC24, respectively, The blocks are respectively allocated to the temporary schedules of the processing units MPC17 to MPC24). With this, a temporary timetable for a total of eight paths is produced for one substrate W. FIG. 8C shows a temporary schedule corresponding to the path through the processing unit MPC17. This temporary schedule is substantially the same as the temporary schedule of FIG. 8B. Among them, the difference is: through the processing unit MPC17; and the configuration in the third chemical tank CC3 There is a chemical liquid supply block for indicating the chemical liquid supply.
圖9係顯示氣泡去除處理的排程之一例。在此例子中,針對共有藥液箱CC1之第一處理區劃PZ1的處理單元MPC1至MPC8計畫氣泡去除處理。排程功能部65係針對處理單元MPC1至MPC8以在時間軸上不會彼此重疊之方式依序配置氣泡去除處理區塊。藉此,計畫用以針對處理單元MPC1至MPC8依序執行之氣泡去除處理。 FIG. 9 shows an example of the schedule of the bubble removal process. In this example, the bubble removal process is planned for the processing units MPC1 to MPC8 of the first processing zone PZ1 sharing the chemical tank CC1. The scheduling function unit 65 sequentially arranges the bubble removal processing blocks for the processing units MPC1 to MPC8 so as not to overlap each other on the time axis. In this way, it is planned to perform the bubble removal processing for the processing units MPC1 to MPC8 in sequence.
在本實施形態中,氣泡去除處理係用以從一個藥液箱CC僅對預先設定的數量(在本實施形態中為一個)的處理單元MPC壓送藥液之處理。藉此,以通過藥液供給配管40並僅通過一個流量計46之方式以大流量流通藥液,藉此消除該流量計46以及配置有該流量計46的分歧供給路徑42、43內的氣泡。由於在氣泡去除處理中使用連接至對象的處理單元MPC之藥液箱CC,因此於所對應的藥液箱CC配置有與氣泡去除處理的期間對應之長度的藥液供給區塊。 In the present embodiment, the air bubble removal process is a process for pressurizing and feeding a medical solution from one medical solution tank CC to only a predetermined number (one in the present embodiment) of the processing units MPC. By this, the chemical liquid is circulated at a large flow rate through the chemical liquid supply pipe 40 and only through one flow meter 46, thereby eliminating bubbles in the flow meter 46 and the branch supply paths 42 and 43 where the flow meter 46 is arranged . Since the chemical liquid tank CC connected to the target processing unit MPC is used for the bubble removal process, a chemical liquid supply block of a length corresponding to the period of the bubble removal process is arranged in the corresponding chemical liquid tank CC.
更具體而言,所謂針對處理單元MPC1之氣泡去除處理係指將在第一處理區劃PZ1中將處理單元MPC1的藥液閥47開啟並將隸屬於第一處理區劃PZ1之其他的全部的處理單元MPC2至MPC8的藥液閥47關閉之狀態持續一定時間之處理。因此,電腦60係藉由控制處理單元MPC1至MPC8的藥液閥47來執行氣泡去除處理。針對其他的處理單元MPC之氣泡去除處理亦同樣。 More specifically, the so-called air bubble removal process for the processing unit MPC1 refers to all the other processing units that will open the chemical liquid valve 47 of the processing unit MPC1 in the first processing zone PZ1 and belong to the first processing zone PZ1 The process of closing the liquid valve 47 of MPC2 to MPC8 for a certain period of time. Therefore, the computer 60 executes the bubble removal process by controlling the chemical liquid valves 47 of the processing units MPC1 to MPC8. The same applies to the bubble removal process for other processing units MPC.
圖10A及圖10B係顯示基板處理的排程的一例。在此例子中,設想下述情形:從主機電腦64所賦予的製程工作資料 係規定了應用用以將處理單元MPC1至MPC24指定成並行處理單元之配方來處理四片基板W1至W4之事宜。 10A and 10B show an example of a schedule of substrate processing. In this example, imagine the following scenario: process work data assigned from the host computer 64 It stipulates the processing of four substrates W1 to W4 using the recipe for designating the processing units MPC1 to MPC24 as parallel processing units.
在計畫第一片的基板W1的處理時,由於第一處理區劃PZ1、第二處理區劃PZ2以及第三處理區劃PZ3皆非使用於用以進行基板處理,因此排程功能部65係選擇例如號碼最小的第一處理區劃PZ1並製作八個暫時時間表,該八個暫時時間表係分別表示分別通過第一處理區劃PZ1中的有效的處理單元MPC1至MPC8之八個路徑。排程功能部65係針對這些暫時時間表的各者執行正式排程,並製作用以藉由一個處理單元MPC(例如處理單元MPC1)處理第一片基板W1之計畫。處理單元MPC1中之結束基板W1的處理之時刻係成為處理單元MPC1的單元最後使用時刻t1,且成為第一處理區劃PZ1的區劃最後使用時刻T1。這些單元最後使用時刻t1、區劃最後使用時刻T1係使用歷程資料82(參照圖4)的例子。同樣地,關於其他的處理單元MPC及處理區劃PZ,單元最後使用時刻以及區劃最後使用時刻亦作為使用歷程資料82記憶於記憶部63。 When planning the processing of the first substrate W1, since the first processing zone PZ1, the second processing zone PZ2, and the third processing zone PZ3 are not used for substrate processing, the scheduling function 65 selects, for example, The first processing zone PZ1 with the smallest number makes eight temporary schedules, which respectively represent eight paths through the effective processing units MPC1 to MPC8 in the first processing zone PZ1, respectively. The scheduling function unit 65 performs formal scheduling for each of these temporary schedules, and prepares a plan for processing the first substrate W1 by one processing unit MPC (eg, processing unit MPC1). The time when the processing of the substrate W1 in the processing unit MPC1 ends is the unit last use time t1 which becomes the processing unit MPC1, and the zone last use time T1 which becomes the first processing zone PZ1. The last use time t1 of these units and the last use time T1 of the division are examples of use history data 82 (refer to FIG. 4 ). Similarly, regarding the other processing unit MPC and the processing zone PZ, the unit last use time and the zone last use time are also stored in the memory section 63 as the use history data 82.
在計畫第二片的基板W2的處理時,針對第一處理區劃PZ1,一片的基板W1的處理已計畫完畢;針對第二處理區劃PZ2及第三處理區劃PZ3,基板處理尚未計畫。因此,排程功能部65係選擇基板處理尚未計畫的第二處理區劃PZ2及第三處理區劃PZ3中之號碼最小的第二處理區劃PZ2並製作八個暫時時間表,該八個暫時時間表係分別表示分別通過第二處理區劃PZ2中的有效的處理單元MPC9至MPC16之八個 路徑。排程功能部65係對這些暫時時間表各者執行正式排程,並製作用以藉由一個處理單元MPC(例如處理單元MPC9)處理第二片的基板W2之計畫。在結束處理單元MPC9所為之基板W2的處理之時刻係成為處理單元MPC19的單元最後使用時刻t9,且成為第二處理區劃PZ2的區劃最後使用時刻T2。 When planning the processing of the second substrate W2, the processing of one substrate W1 has been planned for the first processing zone PZ1; for the second processing zone PZ2 and the third processing zone PZ3, the substrate process has not been planned. Therefore, the scheduling function unit 65 selects the second processing zone PZ2 with the smallest number among the second processing zone PZ2 and the third processing zone PZ3 that have not yet been planned by the substrate processing and creates eight temporary schedules, and the eight temporary schedules Respectively represent eight effective processing units MPC9 to MPC16 in the second processing zone PZ2 respectively path. The scheduling function unit 65 performs formal scheduling on each of these temporary schedules and prepares a plan for processing the second substrate W2 by one processing unit MPC (for example, processing unit MPC9). At the time when the processing of the substrate W2 by the processing unit MPC9 is ended, the unit last usage time t9 which becomes the processing unit MPC19 and the division last usage time T2 which becomes the second processing division PZ2.
在計畫第三片的基板W3的處理時,由於針對第一處理區劃PZ1及第二處理區劃PZ2之基板處理已計畫完畢,因此排程功能部65係選擇第三處理區劃PZ3並製作八個暫時時間表,該八個暫時時間表係分別表示分別通過第三處理區劃PZ3中的有效的處理單元MPC17至MPC24之八個路徑。排程功能部65係對這些暫時時間表各者執行正式排程,並製作用以藉由一個處理單元MPC(例如處理單元MPC17)處理第三片的基板W3之計畫。在結束處理單元MPC17所為之基板W3的處理之時刻係成為處理單元MPC17的單元最後使用時刻t17,且成為第三處理區劃PZ3的區劃最後使用時刻T3。 When planning the processing of the third substrate W3, since the substrate processing for the first processing zone PZ1 and the second processing zone PZ2 has been planned, the scheduling function unit 65 selects the third processing zone PZ3 and makes eight A temporary schedule, the eight temporary schedules respectively represent eight paths through the effective processing units MPC17 to MPC24 in the third processing zone PZ3. The scheduling function unit 65 performs formal scheduling on each of these temporary schedules, and prepares a plan for processing the third substrate W3 by one processing unit MPC (eg, processing unit MPC17). At the time when the processing of the substrate W3 by the processing unit MPC17 is ended, the unit last usage time t17 which becomes the processing unit MPC17 and the division last usage time T3 which becomes the third processing division PZ3.
在計畫第四片的基板W4(參照圖10)的處理時,排程功能部65係比較第一處理區劃PZ1、第二處理區劃PZ2以及第三處理區劃PZ3的區劃最後使用時刻T1、T2、T3,並選擇與最古老的區劃最後使用時刻T1(參照圖10A)對應之第一處理區劃PZ1。再者,排程功能部65係製作八個暫時時間表,該八個暫時時間表係分別表示分別通過第一處理區劃PZ1中的有效的處理單元MPC1至MPC8之八個路徑。排程功能部65係分別對這些暫時時間表各者執行正式排程,並選擇一個處理 單元MPC。在圖10B的例子中,在第一主搬運機器人CR1能搬入基板W4之時刻a1中,由於第一處理區劃PZ1的處理單元MPC1至MPC8皆未處理基板W,因此即使在任一個處理單元MPC1至MPC8中皆能計畫基板W4的處理,且基板處理結束推定時刻(基板W4返回至承載器C之時刻)亦實質性地相等。另一方面,處理單元MPC1的單元最後使用時刻t1係初始值以外的有意義值,且其他的處理單元MPC2至MPC8的單元最後使用時刻皆為初始值。因此,排程功能部65係選擇已使用了通過處理單元MPC2至MPC8中之號碼最小的處理單元MPC2的暫時時間表之正式排程,並製作以該處理單元MPC2處理第四片的基板W4之計畫。由於結束處理單元MPC2所為之基板W4的處理之時刻係處理單元MPC2的單元最後使用時刻t2,且為比單元最後使用時刻t1還後面的時刻,因此成為第一處理區劃PZ1的區劃最後使用時刻T1=t2。 When planning the processing of the fourth substrate W4 (see FIG. 10 ), the scheduling function 65 compares the last use times T1 and T2 of the first processing zone PZ1, the second processing zone PZ2, and the third processing zone PZ3 , T3, and select the first processing zone PZ1 corresponding to the last usage time T1 of the oldest zone (refer to FIG. 10A). Furthermore, the scheduling function unit 65 creates eight temporary schedules, which respectively represent eight paths respectively passing through the effective processing units MPC1 to MPC8 in the first processing zone PZ1. The scheduling function unit 65 executes a formal schedule for each of these temporary schedules and selects a process Unit MPC. In the example of FIG. 10B, at the time a1 when the first main transport robot CR1 can carry the substrate W4, since the processing units MPC1 to MPC8 of the first processing zone PZ1 have not processed the substrate W, even in any of the processing units MPC1 to MPC8 Both can plan the processing of the substrate W4, and the estimated timing of the substrate processing end (the time when the substrate W4 returns to the carrier C) is also substantially equal. On the other hand, the last use time t1 of the unit of the processing unit MPC1 is a meaningful value other than the initial value, and the last use time of the units of the other processing units MPC2 to MPC8 is the initial value. Therefore, the scheduling function unit 65 selects the official schedule that has used the temporary schedule of the processing unit MPC2 having the smallest number among the processing units MPC2 to MPC8, and prepares the substrate W4 for processing the fourth piece by the processing unit MPC2 plan. Since the processing time of the substrate W4 for which the processing unit MPC2 is completed is the last use time t2 of the unit of the processing unit MPC2 and the time after the last use time t1 of the unit, it becomes the last use time T1 of the division of the first processing division PZ1 =t2.
圖11A及圖11B係顯示緊接著對於第一處理區劃PZ1之氣泡去除處理的指示,在該計畫結束之前被賦予基板處理(製程工作)的指示之情形的排程例子。作成與圖9的情形同樣地,排程功能部65係當在時刻t0被輸入氣泡去除指示時(在圖6的步驟S1的「存在指示輸入?」中為「是」,在步驟S2的「基板處理/氣泡去除?」中為「氣泡去除處理」),製作用以於時刻t1至時刻t10的期間執行共有藥液箱CC1之第一處理區劃PZ1的處理單元MPC1至MPC8的氣泡去除處理之計畫(在圖6的步驟S2中為「氣泡去處理」,在步驟S6的「基 板處理計畫中?」中為「否」,在步驟S4中為「計畫氣泡去除處理」)。當於結束該氣泡去除處理的排程之後的時刻t2被輸入基板處理指示時,排程功能部65係計畫製程工作(在圖6的步驟S1的「存在指示輸入?」中為「是」,在步驟S2的「基板處理/氣泡去除?」中為「基板處理」,在步驟S3的「氣泡去除處理接受完畢?」中為「是」,在步驟S5中為「計畫基板處理」)。 FIGS. 11A and 11B show an example of a schedule in which an instruction for substrate removal (process work) is given immediately before the end of the plan for the instruction for removing bubbles in the first processing zone PZ1. As in the case of FIG. 9, the scheduling function unit 65 is when the bubble removal instruction is input at time t0 (“Yes” in “Present instruction input?” in step S1 of FIG. 6, and “Yes” in step S2 "Substrate processing/bubble removal?" is "bubble removal processing"), and is made to perform the bubble removal processing of the processing units MPC1 to MPC8 of the first processing zone PZ1 of the common chemical tank CC1 from time t1 to time t10 Plan (in step S2 of FIG. 6 is "bubble removal processing", in step S6 "basic Board processing plan? "Is "No", and in step S4 it is "planned bubble removal process"). When a substrate processing instruction is input at time t2 after the end of the scheduling of the bubble removal process, the scheduling function unit 65 plans the process operation ("Yes" in "Existence instruction input?" in step S1 of FIG. 6) , "Substrate processing" in "Substrate processing/Bubble removal?" in step S2, "Yes" in "Accepted bubble removal processing completed?" in Step S3, "Planning substrate processing" in Step S5) .
在能將第一片的基板W1搬入至處理單元MPC之最先的時序(時刻t3)中,由於以第一處理區劃PZ1進行氣泡去除處理,因此無法將第一藥液箱CC1使用於用以進行藥液處理。亦即,排程功能部65皆無法對隸屬於第一處理區劃PZ1之處理單元MPC1至MPC8各者製作用以搬運基板W1之計畫。因此,排程功能部65係探索能不與計畫完畢的氣泡去除處理產生干擾地計畫基板處理之處理區劃PZ(圖7的步驟S52的「處理區劃選擇」)。在此,作成用以藉由屬於計畫有氣泡去除處理的第一處理區劃PZ1以外的處理劃區PZ之第二處理區劃PZ2的處理單元MPC(在圖11A的例子中為處理單元MPC9)處理基板W1之計畫。亦即,排程功能部65係對處理單元MPC9配置從時刻t4開始之處理區塊,並對第二藥液箱CC2配置與該處理區塊對應的藥液供給區塊。此外,如前所述,由於並非在處理區塊的整體期間中使用藥液,因此藥液供給區塊具有相當於比處理區塊內的該處理區塊還短的期間之長度。亦即,將從時刻t4起延遲預定時刻的時刻t5開始之藥液供給區塊配置於第二藥液箱CC2。 At the first timing (time t3) when the first substrate W1 can be carried into the processing unit MPC, the first processing zone PZ1 is used to remove bubbles, so the first chemical solution tank CC1 cannot be used for Carry out chemical treatment. That is, none of the scheduling function part 65 can create a plan for transferring the substrate W1 to each of the processing units MPC1 to MPC8 belonging to the first processing zone PZ1. Therefore, the scheduling function unit 65 searches for the processing zone PZ that can plan the substrate process without interfering with the planned bubble removal process ("process zone selection" in step S52 of FIG. 7). Here, the processing unit MPC (the processing unit MPC9 in the example of FIG. 11A) for processing by the second processing division PZ2 belonging to the processing division PZ other than the first processing division PZ1 in which the bubble removal processing is planned is created Plan of substrate W1. That is, the scheduling function unit 65 arranges the processing block starting from time t4 for the processing unit MPC9, and arranges the chemical supply block corresponding to the processing block for the second chemical tank CC2. As described above, since the chemical liquid is not used in the entire period of the processing block, the chemical liquid supply block has a length corresponding to a period shorter than the processing block in the processing block. That is, the chemical solution supply block starting at time t5 delayed from the predetermined time by time t4 is arranged in the second chemical solution tank CC2.
如圖11B所示,在能將第二片的基板W2搬入至處理單元MPC之最先的時序(時刻t6)中,雖然在第一處理區劃PZ1中的氣泡去除處理尚未結束(時刻t10以前),但由於在用以開始用以進行基板處理之藥液的使用之時序(時刻t11)結束第一處理區劃PZ1的氣泡去除處理,因此可利用第一藥液箱CC1。因此,排程功能部65係作成用以藉由第一處理區劃PZ1的處理單元MPC(在圖11B的例子中為處理單元MPC1)處理基板W2之計畫。亦即,排程功能部65係將從時刻t6開始之處理區塊配置於處理單元MPC1,並以從時刻11開始之方式將與該處理區塊對應的藥液供給區塊配置於第一藥液箱CC1。 As shown in FIG. 11B, at the first timing (time t6) at which the second substrate W2 can be carried into the processing unit MPC, although the bubble removal processing in the first processing zone PZ1 has not ended (before time t10) However, since the bubble removal process of the first processing zone PZ1 ends at the timing (time t11) for starting the use of the chemical solution for substrate processing, the first chemical solution tank CC1 can be used. Therefore, the schedule function section 65 is a plan for processing the substrate W2 by the processing unit MPC (the processing unit MPC1 in the example of FIG. 11B) of the first processing zone PZ1. That is, the scheduling function part 65 is to arrange the processing block from time t6 on the processing unit MPC1, and to arrange the medical solution supply block corresponding to the processing block on the first medicine from time 11 Liquid tank CC1.
如此,以不與氣泡去除處理產生干擾之方式計畫基板處理。 In this way, the substrate processing is planned so as not to interfere with the bubble removal processing.
圖12係顯示緊接著基板處理(程序工作)的指示(時刻t0),在該計畫結束之前對第一處理區劃PZ1賦予氣泡去除處理的指示(時刻t01)之情形的排程例子。排程功能部65係保留氣泡去除處理的計畫,並作成與圖10A及圖10B的情形同樣地計畫四片的基板W1至基板W4的處理。亦即,當於時刻t0存在有基板處理的指示時(在圖6的步驟S1的「存在指示輸入?」中為「是」,在步驟S2的「基板處理/氣泡去除?」中為「基板處理」),排程功能部65係如下述般計畫基板處理(在圖6的步驟S2的「基板處理/氣泡去除?」中為「基板處理」,在步驟S3的「氣泡去除處理接受完畢?」中為「否」,在步驟S5中為「計畫基板處理」)。 FIG. 12 shows an example of a schedule in the case where an instruction (time t01) for bubble removal processing is given to the first processing zone PZ1 immediately before the end of the plan (time t0) of substrate processing (program operation). The scheduling function unit 65 retains the plan of the bubble removal process, and prepares the process of planning four substrates W1 to W4 in the same manner as in the case of FIGS. 10A and 10B. That is, when there is an instruction for substrate processing at time t0 ("Yes" in the "presence instruction input?" in step S1 of FIG. 6, and "substrate in "substrate processing/bubble removal?" in step S2 Processing"), the scheduling function unit 65 plans the substrate processing as follows ("Substrate processing/Bubble removal?" in step S2 of FIG. 6 is "substrate processing", and the "bubble removal processing is accepted in step S3" "?" is "No", in step S5 it is "planned substrate processing").
首先,在處理單元MPC1中以從時刻t1開始之方式配置第一片的基板W1用的處理區塊。再者,在第一藥液箱CC1中將與該處理區塊對應的藥液供給區塊配置於時刻t11至時刻t12的期間。 First, the processing block for the first substrate W1 is arranged in the processing unit MPC1 from time t1. Furthermore, the chemical solution supply block corresponding to the processing block is arranged in the period from time t11 to time t12 in the first chemical solution tank CC1.
接著,在處理單元MPC9中以從時刻t2開始之方式配置第二片的基板W2用的處理區塊。再者,在第二藥液箱CC2中將與該處理區塊對應的藥液處理區塊配置於時刻t21至時刻t22的期間。 Next, the processing block for the second substrate W2 is arranged in the processing unit MPC9 from time t2. In addition, the chemical solution processing block corresponding to the processing block is arranged in the period from time t21 to time t22 in the second chemical solution tank CC2.
在處理單元MPC17中以從時刻t3開始之方式配置第三片的基板W3用的處理區塊。再者,在第三藥液箱CC3將與該處理區塊對應的藥液處理區塊配置於時刻t31至時刻t32的期間。 In the processing unit MPC17, a processing block for the third substrate W3 is arranged from time t3. Furthermore, the chemical solution processing block corresponding to the processing block is arranged in the period from time t31 to time t32 in the third chemical solution tank CC3.
最後,在處理單元MPC2中以從時刻t4開始之方式配置第四片的基板W4用的處理區塊。再者,在第一藥液箱CC1中將與該處理區塊對應的藥液處理區塊配置於時刻t41至時刻t42的期間。 Finally, the processing block for the fourth substrate W4 is arranged in the processing unit MPC2 from time t4. In addition, the chemical solution processing block corresponding to the processing block is disposed in the period from time t41 to time t42 in the first chemical solution tank CC1.
接著,在這之後,作成與圖9的情形同樣地以與計畫完畢的基板處理之間不會產生干擾之方式計畫第一處理區劃PZ1的處理單元MPC1至MPC8的氣泡去除處理。更具體而言,以在第一處理區劃PZ1中從基板W1及基板W4的基板處理用的第一藥液箱CC1的使用結束之時刻t42開始之方式,從處理單元MPC1依序配置有氣泡去除處理區塊。 Next, as in the case of FIG. 9, the bubble removal process of the processing units MPC1 to MPC8 of the first processing zone PZ1 is planned so as not to cause interference with the planned substrate processing. More specifically, in the first processing zone PZ1, from the time t42 when the use of the first chemical solution tank CC1 for substrate processing of the substrate W1 and the substrate W4 starts, the bubble removal is sequentially arranged from the processing unit MPC1 Processing blocks.
如此,以不與先接受的基板處理產生干擾之方式計畫氣泡去除處理。 In this way, the bubble removal process is planned so as not to interfere with the substrate process previously received.
如上所述,本實施形態的基板處理裝置1係包含有:複數個處理單元MPC,係藉由處理液處理基板W;藥液箱CC,係將作為處理液的一例之藥液供給至處理單元MPC;以及藥液供給配管40,係將藥液從藥液箱CC導引至處理單元MPC。藥液供給配管40係包含有:主供給路徑41,係連接至藥液箱CC;以及複數個分歧供給路徑42、43,係從主供給路徑41分別分歧至複數個處理單元MPC。於各個分歧供給路徑42、43配置有:流量計46,係檢測流通於分歧供給路徑42、43的流路之藥液的流量;以及藥液閥47,係將分歧供給路徑42、43予以開閉並控制藥液供給至處理單元MPC(尤其是藥液噴嘴34)。作為控制器之電腦60係控制複數個藥液閥47,且不論流量計46有無發生異常皆計畫用以消除分歧供給路徑42、43的流路中的氣泡之氣泡消除動作(氣泡去除處理),並依據該計畫控制複數個藥液閥47。 As described above, the substrate processing apparatus 1 of this embodiment includes: a plurality of processing units MPC, which processes the substrate W with the processing liquid; and a chemical tank CC, which supplies the chemical liquid as an example of the processing liquid to the processing unit MPC; and the chemical liquid supply piping 40, which guides the chemical liquid from the chemical liquid tank CC to the processing unit MPC. The chemical liquid supply piping 40 includes a main supply path 41 connected to the chemical liquid tank CC, and a plurality of branched supply paths 42 and 43 branched from the main supply path 41 to a plurality of processing units MPC. The branch supply paths 42 and 43 are provided with: a flow meter 46 that detects the flow rate of the chemical liquid flowing through the flow paths of the branch supply paths 42 and 43; and a chemical liquid valve 47 that opens and closes the branch supply paths 42 and 43 And control the supply of the chemical liquid to the processing unit MPC (especially the chemical liquid nozzle 34). The computer 60 as a controller controls a plurality of chemical liquid valves 47, and plans to eliminate bubbles (bubble removal processing) for eliminating bubbles in the flow paths of the branch supply paths 42, 43 regardless of whether or not an abnormality occurs in the flow meter 46. , And control a plurality of liquid medicine valves 47 according to the plan.
依據此構成,不論流量計46有無異常皆控制藥液閥47,俾進行用以消除分歧供給路徑42、43的流路內的氣泡之氣泡消除動作。亦即,無須等待流量計46產生異常,預先計畫氣泡消除動作並預防性地實施。藉此,由於抑制或防止伴隨著流量計46的異常所導致的基板處理裝置1停止運轉,因此能提升基板處理裝置1的稼動率。此外,由於能在氣泡於分歧供給路徑42、43被捕獲並對基板處理產生影響之前就先消除分歧供給路徑42、43的氣泡,因此能抑制或防止基板W成為無用。 According to this configuration, the chemical liquid valve 47 is controlled regardless of whether there is an abnormality in the flow meter 46, so as to perform a bubble elimination operation for eliminating bubbles in the flow paths of the branch supply paths 42, 43. That is, it is not necessary to wait for the flowmeter 46 to generate an abnormality, and the bubble elimination operation is planned in advance and is implemented preventively. With this, since the operation of the substrate processing apparatus 1 due to the abnormality of the flowmeter 46 is suppressed or prevented, the utilization rate of the substrate processing apparatus 1 can be improved. In addition, the bubbles in the branch supply paths 42 and 43 can be eliminated before the bubbles are trapped in the branch supply paths 42 and 43 and affect the substrate processing, so that the substrate W can be suppressed or prevented from becoming useless.
此外,在本實施形態中,電腦60係計畫處理單元MPC 中的基板處理動作,並以避免與前述基板處理動作產生干擾之方式計畫氣泡去除處理。藉此,能抑制對於基板處理動作的影響並預防性地進行氣泡消除動作。因此,能抑制基板處理裝置1的稼動率的降低並執行預防性的氣泡消除動作。 In addition, in this embodiment, the computer 60 is the program processing unit MPC In the substrate processing operation in the process, and to avoid interference with the aforementioned substrate processing operation, the bubble removal process is planned. With this, the influence of the substrate processing operation can be suppressed, and the bubble eliminating operation can be performed preventively. Therefore, it is possible to perform a preventive bubble elimination operation while suppressing a decrease in the utilization rate of the substrate processing apparatus 1.
再者,本實施形態的基板處理裝置1係具備有於複數個處理區劃PZ1至PZ3各者各自獨立的藥液供給配管40。此外,於每個藥液供給配管40判斷是否可開始氣泡消除動作。例如,在圖12的例子中,將第一處理區劃PZ1中的氣泡去除處理的開始時序設定於停止使用第一處理區劃PZ1的藥液箱CC1之時刻t42。該時刻t42係比其他的處理區劃PZ2、PZ3的藥液箱CC2、CC3的使用之時刻還早。因此,能不用等待其他的處理區劃PZ2、PZ3停止使用而能迅速地開始第一理區劃PZ1的氣泡消除動作。 In addition, the substrate processing apparatus 1 of the present embodiment is provided with the chemical liquid supply piping 40 independent of each of the plurality of processing zones PZ1 to PZ3. In addition, it is determined whether the bubble elimination operation can be started for each chemical solution supply pipe 40. For example, in the example of FIG. 12, the start timing of the bubble removal process in the first processing zone PZ1 is set at the time t42 when the use of the chemical tank CC1 of the first processing zone PZ1 is stopped. This time t42 is earlier than the use time of the chemical tanks CC2 and CC3 of the other processing zones PZ2 and PZ3. Therefore, without waiting for the other processing zones PZ2 and PZ3 to stop being used, the bubble elimination operation of the first management zone PZ1 can be quickly started.
此外,在本實施形態中,於某個處理區劃PZ計畫有氣泡消除動作之情形中,探索未計畫有氣泡消除動作之其他的處理區劃PZ,並以在其他的處理區劃PZ中執行基板處理之方式計畫基板處理。 In addition, in the present embodiment, in a case where a bubble elimination operation is planned for a certain processing zone PZ, another process zone PZ where no bubble elimination action is planned is explored, and the substrate is executed in the other process zone PZ The processing method is planned for substrate processing.
藉此,即使在緊接著基板處理的指示被賦予氣泡去除處理的指示之情形中,亦無須等待計畫完畢的基板處理結束而能開始氣泡去除處理。藉此,可將氣泡去除處理提前執行。 With this, even in the case where an instruction for bubble removal processing is given immediately after the substrate processing instruction, the bubble removal processing can be started without waiting for the completion of the planned substrate processing. With this, the bubble removal process can be executed in advance.
在圖11A及圖11B的例子中,當被指示基板處理計畫時,排程功能部65係從複數個處理區劃PZ1至PZ3中選擇不會與已存在的氣泡去除處理計畫產生干擾之處理區劃PZ內的處理單元MPC(基板W1為第二處理區劃PZ2內的處理單元 MPC9,基板W2為第一處理區劃PZ1的MPC8),並立案基板處理計畫。 In the examples of FIGS. 11A and 11B, when the substrate processing plan is instructed, the scheduling function unit 65 selects a process that does not interfere with the existing bubble removal process plan from the plurality of processing zones PZ1 to PZ3 Processing unit MPC in the division PZ (substrate W1 is the processing unit in the second processing division PZ2 MPC9, substrate W2 is MPC8 of the first processing zone PZ1), and the substrate processing plan is filed.
藉此,即使在緊接著基板處理的指示被賦予基板處理的指示之情形中,亦無須等待計畫完畢的氣泡去除處理結束而能開始基板處理。藉此,可將基板處理提前執行。 With this, even in the case where the instruction for substrate processing is given immediately after the instruction for substrate processing, the substrate processing can be started without waiting for the completion of the planned bubble removal processing to be completed. By this, the substrate processing can be performed in advance.
以上雖然已說明本發明的具體實施形態,但本發明亦能如下述例示性地列舉般進一步以其他的形態來實施。 Although the specific embodiments of the present invention have been described above, the present invention can also be implemented in other forms as exemplified below.
例如,在前述實施形態中,與第一處理區劃PZ1、第二處理區劃PZ2以及第三處理區劃PZ3對應地設置有第一藥液箱CC1、第二藥液箱CC2以及第三藥液箱CC3。然而,亦可為複數個處理區劃PZ共有一個藥液箱,且於該一個藥液箱設置分別對應於複數個處理區劃PZ之複數個泵等壓送裝置。 For example, in the foregoing embodiment, the first chemical liquid tank CC1, the second chemical liquid tank CC2, and the third chemical liquid tank CC3 are provided corresponding to the first processing area PZ1, the second processing area PZ2, and the third processing area PZ3 . However, it is also possible for a plurality of treatment zones PZ to share a chemical liquid tank, and a plurality of pump equal pressure delivery devices respectively corresponding to the plurality of treatment zones PZ are provided in the one chemical liquid tank.
此外,在前述實施形態中,雖然用以檢測通過分歧供給路徑42、43的藥液的流量之流量計46為處理液關連單元的一例,但作為處理液關連單元亦可例示其他諸如濃度感測器、液質感測器、壓力感測器、溫度感測器、熱交換器等。該等為存在有因為在分歧供給路42、43內產生的氣泡而對於該動作或檢測產生障礙之虞的裝置。 Furthermore, in the foregoing embodiment, although the flow meter 46 for detecting the flow rate of the chemical liquid passing through the divergent supply paths 42 and 43 is an example of the processing liquid related unit, as the processing liquid related unit, other such as concentration sensing may be exemplified. Sensor, liquid quality sensor, pressure sensor, temperature sensor, heat exchanger, etc. These are devices that may cause an obstacle to the operation or detection due to bubbles generated in the branch supply paths 42 and 43.
雖然已詳細地說明本發明的實施形態,但這些僅是用以明瞭本發明的技術性內容之具體例,本發明不應解釋成限定於這些具體例,本發明的範圍僅被添付的申請專利範圍所限定。 Although the embodiments of the present invention have been described in detail, these are only specific examples to clarify the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, and the scope of the present invention is only applied for patents The scope is limited.
本發明係與2016年4月15日於日本特許廳所提出的 日本特願2016-082422號對應,本申請的所有內容係被引用並組入於此。 The present invention was proposed at the Japan Patent Office on April 15, 2016 Japanese Patent Application No. 2016-082422 corresponds, all contents of this application are cited and incorporated herein.
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