TWI654490B - 用以塗佈半導體基板處理設備之元件的內部流體潤濕表面之塗佈系統及方法 - Google Patents
用以塗佈半導體基板處理設備之元件的內部流體潤濕表面之塗佈系統及方法Info
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- TWI654490B TWI654490B TW103145618A TW103145618A TWI654490B TW I654490 B TWI654490 B TW I654490B TW 103145618 A TW103145618 A TW 103145618A TW 103145618 A TW103145618 A TW 103145618A TW I654490 B TWI654490 B TW I654490B
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- Prior art keywords
- fluid
- ald
- mld
- barrier coating
- layer deposition
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- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
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Classifications
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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Abstract
本發明揭露一種用以在供半導體基板處理設備之真空腔室用的流體處理元件之內部流體潤濕表面上形成原子層沉積(ALD)障壁塗層或分子層沉積(MLD)障壁塗層的塗佈系統。塗佈系統包含:流體處理元件,其中內部流體潤濕表面定義該塗佈系統之製程區域;與該元件之該製程區域流體連通的氣體供應系統,其中該氣體供應系統透過該流體處理元件之入口供應製程氣體至該元件之該製程區域,使得可在該流體處理元件之該等流體潤濕表面上形成ALD或MLD障壁塗層;及與該元件之該製程區域流體連通的排放系統,其中該排放系統透過該流體處理元件之出口從該元件之該製程區域排放該等製程氣體。
Description
本發明關於由原子層沉積及分子層沉積所形成之塗層,且可在塗佈供半導體基板處理設備之真空腔室用的流體處理元件之內部流體潤濕表面方面具有特定用途。 [相關申請案之交互參照]
本申請案依35U.S.C. §119(e)主張2013年12月31日所提申之美國臨時專利申請案第61/922,196號之優先權,在此將其整體內容在此併入做為參考。
半導體基板處理設備係用以藉由包含蝕刻、物理氣相沉積(PVD)、化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)、原子層沉積(ALD)、電漿增強原子層沉積(PEALD)、脈衝沉積層(PDL)、分子層沉積(MLD)、電漿增強脈衝沉積層(PEPDL)處理、及阻劑移除的技術來處理半導體基板。半導體基板處理設備(像是前述之處理設備)可包含複數相關但獨立的流體處理元件,該等流體處理元件可用以將一組半導體基板從未完成狀態轉變成具有被施加之微電路的完成狀態。如此流體處理元件可包含曝露於腐蝕性及/或侵蝕性製程氣體的內部流體潤濕表面。因此,希望如此流體處理元件之如此內部流體潤濕表面在曝露於各製程氣體或製程流體時係抗腐蝕及/或抗侵蝕。
在此揭露的是用以在供半導體基板處理設備之真空腔室用的流體處理元件之內部流體潤濕表面上形成原子層沉積(ALD)障壁塗層或分子層沉積(MLD)障壁塗層的塗佈系統。流體處理元件在該流體處理元件之入口及出口之間具有內部流體潤濕表面,其中該等內部流體潤濕表面在半導體基板的處理期間於半導體基板處理設備之真空腔室中接觸製程流體。塗佈系統包含流體處理元件,其中內部流體潤濕表面定義該塗佈系統之製程區域。氣體供應系統係與流體處理元件之製程區域流體連通,其中該氣體供應系統透過該流體處理元件之入口將製程氣體供應至該流體處理元件的該製程區域,使得可在該流體處理元件之流體潤濕表面上形成ALD或MLD障壁塗層。排放系統係與流體處理元件之製程區域流體連通,其中該排放系統透過該流體處理元件之出口從該流體處理元件之該製程區域排放製程氣體。
亦在此揭露的是供半導體基板處理設備之真空腔室用的流體處理元件。流體處理元件包含內部流體潤濕表面,且在該等內部流體潤濕表面上包含原子層沉積(ALD)或分子層沉積(MLD)障壁塗層,其中包含該ALD或MLD障壁塗層的該等流體潤濕表面係用以在半導體基板處理製程期間被製程氣體及/或流體接觸,其中該ALD或MLD障壁塗層保護底下的該等流體潤濕表面免受侵蝕及/或腐蝕。
又在此揭露的是在流體處理元件之內部流體潤濕表面上形成原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,該流體處理元件係供半導體基板處理設備之真空腔室用,其中該流體處理元件之該等內部流體潤濕表面構成用以形成該ALD或MLD障壁塗層之製程區域。方法包含利用氣體供應系統將原子層沉積氣體或分子層沉積氣體依序注射至流體處理元件之入口內而在內部流體潤濕表面上形成ALD或MLD障壁塗層、及利用排放系統從該元件之出口依序排放該等原子層沉積氣體或該等分子層沉積氣體。
在以下詳細描述中,提出眾多特定細節以提供在此揭露之設備及方法的徹底理解。然而,如同對於該領域中具有通常知識者將係顯而易見,可在無此等特定細節的情況下或藉由使用替代元件或製程來執行在此之實施例。在其它情況中,不詳述為人熟知的製程、程序、及/或元件,以免無謂地混淆在此揭露實施例之實施態樣。當在此使用時,用語「約」代表±10%。
在此揭露的是用以在供半導體基板處理設備之真空腔室用的流體處理元件之內部流體潤濕表面上形成原子層沉積(ALD)障壁塗層或分子層沉積(MLD)障壁塗層的塗佈系統(如在此所用為ALD或MLD設備)。流體處理元件在該流體處理元件之入口及出口之間具有內部流體潤濕表面,其中該等內部流體潤濕表面在半導體基板的處理期間於半導體基板處理設備之真空腔室中接觸製程流體。塗佈系統包含流體處理元件,其中內部流體潤濕表面定義該塗佈系統之製程區域。氣體供應系統係與流體處理元件之製程區域流體連通,其中該氣體供應系統透過該流體處理元件之入口將製程氣體供應至該流體處理元件的該製程區域,使得可在該流體處理元件之流體潤濕表面上形成ALD或MLD障壁塗層。排放系統係與流體處理元件之製程區域流體連通,其中該排放系統透過該流體處理元件之出口從該流體處理元件之該製程區域排放製程氣體。
半導體基板處理設備可包含複數相關但獨立的流體處理元件,該等流體處理元件可在半導體基板處理設備之真空腔室的上游、下游、或內部,其中該處理設備係用以處理支撐於真空腔室之反應器空間內的半導體基板。舉例來說,如此流體處理元件可包含但不限於排放組件(像是共同受讓之美國專利公開案第2013/0248113號中所揭露者)、氣體輸送系統(像是共同受讓之美國專利公開案第2013/0305190號中所揭露者)、氣體盒(像是共同受讓之美國專利第6,101,419號中所揭露者)、氣體棒(像是共同受讓之美國專利公開案第2013/0056087號或美國專利第6,283,143號中所揭露者)、近接頭(像是共同受讓之美國專利第7,363,727號中所揭露者)、包含液體分配噴嘴之陣列的液體分配裝置(流體輸送系統)(像是共同受讓之美國專利公開案第2013/233356號中所揭露者)、空氣過濾單元及/或排放系統(像是共同受讓之美國專利第8,282,698號中所揭露者)、去離子水壓力系統及相對應的設施管線(像是共同受讓之美國專利第6,406,273號中所揭露該等者)、包含氣體切換部份之氣體分散系統(像是共同受讓之美國專利公開案第2012/0070997號中所揭露者)、溫度控制構件(像是共同受讓之美國專利第7,517,803號中所揭露之溫度控制頂板、或共同受讓之美國專利第7,939,784號中所揭露之溫度控制底板)、及/或擴散件(像是共同受讓之美國專利第6,663,025號中所揭露者),茲將以上文件之所有者整體併入做為參考。
如此流體處理元件在其中包含內部流體潤濕表面,其中侵蝕性及/或腐蝕性製程氣體及/或流體可能造成該等內部流體潤濕表面的劣化且/或造成來自該等內部流體潤濕表面的污染物被釋放到半導體基板處理設備之真空腔室中(亦即,處理環境或反應器空間),因而在半導體基板處理期間造成半導體基板之處理缺陷及/或基板污染。舉例來說,在真空腔室上游(曝露於高壓腐蝕性氣體)及在真空腔室下游(曝露於低壓氣體、可能還有自由基)之流體處理元件的含鐵部件可能在以下情況中造成基板污染:當侵蝕性及/或腐蝕性製程氣體及/或液體與釋放鐵進入真空腔室中的內部流體潤濕表面交互作用,因而導致受處理之半導體基板的鐵污染時。與通常具有簡單幾何之真空腔室的元件相反,下游或上游流體處理元件的含鐵元件(導致基板污染)係非常難以清楚識別,更別提維修了。此係由於流體處理元件中包含太多具有不規則幾何的元件,且該等流體處理元件中包含太多可能在高溫塗佈製程下降解的元件。舉例來說,無鐵Si CVD塗佈可能需要施加約400°C的溫度,其中流體處理元件之像是氣體盒(如圖3中所示)內的氣體閥之類彈簧隔板材料(Co-Ni合金)/O型環/塑膠把手的元件無法在約400°C的塗佈溫度下倖存。
為了減少來自流體處理元件之內部流體潤濕表面的污染物,將整個上游或下游流體處理元件預先組裝、真空密封、並配置成形成原子層沉積(ALD)設備或分子層沉積(MLD)設備的製程空間,其中可在該等流體處理元件之該等內部流體潤濕表面上形成ALD或MLD障壁塗層。圖1顯示用以在流體處理元件之內部流體潤濕表面上形成ALD或MLD障壁塗層的塗佈系統之實施例。為了在流體處理元件110之內部流體潤濕表面上形成ALD或MLD障壁塗層,從ALD或MLD前驅物氣體輸送系統100(氣體供應系統)透過流體處理元件110之入口105注射ALD或MLD塗佈氣體,並藉由排放系統120透過流體處理元件110之出口115排放該等ALD或MLD前驅物氣體。然後將流體處理元件從輔助之ALD前驅物氣體輸送系統100及排放系統120移除。當與氣體輸送系統及排放系統斷開時,可將在其內部流體潤濕表面上具有ALD或MLD障壁塗層的整個流體處理元件安裝在半導體基板處理設備之真空腔室的上游、下游、或當中,其中該流體處理元件之該ALD或MLD障壁塗層將減少來自該流體處理元件的污染(像是金屬污染)。
在流體處理元件之內部流體潤濕表面上形成ALD或MLD障壁塗層的方法包含利用氣體供應系統100將原子層沉積氣體或分子層沉積氣體依序注射至流體處理元件110之入口105內而藉此在流體處理元件100之內部流體潤濕表面上形成ALD或MLD障壁塗層,以及利用排放系統從元件110之出口115依序排放該等原子層沉積氣體或該等分子層沉積氣體,其中該等流體處理元件之該等內部流體潤濕表面構成供形成ALD或MLD障壁塗層用的製程區域。舉例來說,方法可包含將第一反應物氣體之脈衝注射在流體處理元件之內部流體潤濕表面上,及將第二反應物氣體之脈衝注射在該流體處理元件之該等內部流體潤濕表面上以與該第一反應物氣體反應而在該流體處理元件之該等內部流體潤濕表面上形成ALD或MLD障壁塗層,其中該方法較佳地包含將每一注射步驟重複複數次。方法亦包含在注射第一反應物氣體之脈衝以後利用排放系統排放多餘的該第一反應物氣體,以及在分配第二反應物氣體之脈衝以後利用該排放系統排放多餘的該第二反應物氣體及(複數)反應副產物。較佳地,第一及第二反應物氣體係注射至流體處理元件中,而在該流體處理元件之內部流體潤濕表面上形成ALD或MLD障壁塗層,直到該塗層係形成至期望的厚度。
在較佳實施例中,方法包含將第一反應物氣體之脈衝注射在流體處理元件之內部流體潤濕表面上,並接著將第一沖洗氣體脈衝注射在該流體處理元件之該等內部流體潤濕表面上以將多餘的該第一反應物氣體從該等內部流體潤濕表面及該流體處理元件排除。方法包含將第二反應物氣體之脈衝注射在流體處理元件之內部流體潤濕表面上以與第一反應物氣體反應而在該流體處理元件之該等內部流體潤濕表面上形成ALD或MLD障壁塗層,並將第二沖洗氣體脈衝注射在該流體處理元件之該等內部流體潤濕表面上以將多餘的該第二反應物氣體及(複數)反應副產物從該等內部流體潤濕表面及該流體處理元件移除。方法亦較佳地包含在注射第一反應物氣體之脈衝以後利用排放系統排放多餘的該第一反應物氣體、在注射第一沖洗氣體脈衝以後利用該排放系統排放多餘的該第一沖洗氣體脈衝、在分配第二反應物氣體之脈衝以後利用該排放系統排放多餘的該第二反應物氣體及(複數)反應副產物、及在注射第二沖洗氣體脈衝以後利用該排放系統排放多餘的該第二沖洗氣體脈衝。
由ALD或MLD製程所沉積的塗層通常比經由CVD所沉積的類似膜具有更高的純度及更佳的對於微特徵部表面形貌之保形性。此外,ALD及/或MLD製程經常比CVD製程在更低的溫度下沉積類似的材料,因而減少對於組成具有內部流體潤濕表面之流體處理元件的個別元件之熱應力。舉例來說,可在如約50°C(通常的範圍為約50°C到300°C)這麼低的溫度下應用Al2
O3
ALD塗佈。在替代性實施例中,ALD或MLD塗層可在約室溫下形成。此實現塗佈流體處理元件之內部流體潤濕表面的所有者,而不會「燒壞」包含在該流體處理元件中的元件(像是O型環、MFC、密合墊、及/或閥)。在實施例中,可將流體處理元件110設置在烘箱(未顯示)中,使得流體處理元件110之內部流體潤濕表面的溫度可增加至期望的溫度而使ALD或MLD障壁塗層製程可以執行。在較佳實施例中,可將一或更多加熱器150配置成與流體處理元件110熱接觸,使得一或更多加熱器150可將流體處理元件110之內部流體潤濕表面的溫度增加至期望的溫度。一或更多加熱器150可為例如其中包含電阻導線之加熱器(亦即,加熱器帶),其中該加熱器係設置在流體處理元件110之表面上;配置成加熱流體處理元件110的加熱燈;或類似者。
在較佳實施例中,各自包含內部流體潤濕表面之複數流體處理元件係與彼此流體連通,使得每一流體處理元件的內部構成ALD或MLD設備(亦即,塗佈系統)之製程區域。依此方式,可同時在每一流體處理元件之內部流體潤濕表面上形成ALD或MLD障壁塗層。舉例來說,如圖2中所示,為了在第一流體處理元件110a及第二流體處理元件110b之內部流體潤濕表面上形成ALD或MLD障壁塗層,從ALD或MLD前驅物氣體輸送系統100(氣體供應系統)透過第一流體處理元件110a之入口105注射ALD塗佈氣體,並藉由排放系統120透過第二流體處理元件110b之出口115排放該ALD塗佈氣體,其中第一流體處理元件110a及第二流體處理元件110b係與彼此流體連通。接著可將流體處理元件110a、110b從氣體供應系統100及排放系統120移除,其中可將組件110a、110b安裝在相同或不同的半導體基板處理設備上(像是電漿蝕刻設備或沉積設備之真空腔室)。較佳地,依此方式而同時塗佈二或更多流體處理元件。
形成ALD或MLD障壁塗層之方法容許塗層以高度精確及可控制之方式逐層成長。因此,在流體處理元件之內部流體潤濕表面上所形成的ALD或MLD障壁塗層之厚度可依需求加以調整,並且被保形且均勻地施加在整個流體處理元件之內部流體潤濕表面上,因而去除不理想地改變組成流體處理元件之元件(例如像是O型環)之部件尺寸的風險。再者,ALD及MLD製程可沉積無針孔(pinhole)的障壁塗層,因此導致流體處理元件之內部流體潤濕表面的完整覆蓋。可藉由具有高塗佈附著性之ALD製程在不同內部流體潤濕表面(像是流體處理元件之金屬表面、陶瓷表面、或溫度敏感之聚合物表面)上沉積各式惰性材料(像是氧化物/氮化物/氟化物材料)。在較佳實施例中,ALD障壁塗層係由Al2
O3
形成。在替代性實施例中,ALD塗層可包含以下之至少一者:鉭(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)、鉿(Hf)、鉬(Mo)、鈮(Nb)、釩(V)、釕(Ru)及/或鉻(Cr)及其混合物及/或合金。在替代性較佳實施例中,MLD障壁塗層為有機材料、或有機無機混成材料。舉例來說,MLD障壁塗層可為聚醯胺、聚醯亞胺、聚脲、聚硫脲、聚氨酯、聚甲亞胺(polyazomethine)、或聚酯材料。在較佳實施例中,ALD或MLD障壁塗層具有約0.1到500nm或更大之厚度,其中該ALD或MLD障壁塗層較佳地具有約10nm或更大之厚度,且更佳地具有約100nm或更大之厚度。
在較佳實施例中,僅流體處理元件之內部流體潤濕表面會被塗佈。內部流體潤濕表面可為流體處理元件之任何內部表面,其中該流體處理元件之內部構成ALD或MLD設備之製程區域。較佳地,流體處理元件中所包含之真空密封件(亦即,密合墊及O型環)做為硬式罩幕以避免塗佈流體處理元件之外部表面(亦即,非流體潤濕表面)。在若干實施例中,流體處理元件之外部表面上的障壁塗層可能導致處理錯誤,而因此係較佳地加以避免。舉例來說,絕緣性材料在氣體焊接件外部上的ALD塗佈可能干擾該焊接件的RF接地路徑而可能導致該焊接件中的製程氣體點燃。
圖3及4各自顯示可在其內部流體潤濕表面上包含ALD或MLD障壁塗層的示範流體處理元件。圖3顯示氣體盒110之剖面,其中該氣體盒之內部構成ALD或MLD設備之製程區域且其中該氣體盒之內部形成該氣體盒之其上包含ALD或MLD障壁塗層164的內部流體潤濕表面163。圖4顯示溫度控制頂板110,其包含用以將冷卻劑(例如去離子水)循環穿過溫度控制頂板110之通道的冷卻劑入口105及冷卻劑出口115。通道形成流體處理元件之內部,其中該通道之內部流體潤濕表面163在其上包含ALD或MLD障壁塗層164。
操作員可透過與系統控制器200(像是監視器)及數據輸入裝置(像是鍵盤)的互動來控制ALD或MLD障壁塗層的形成。運用系統控制器200以在沉積、沉積後處理、及/或其它製程操作期間控制製程條件。控制器200通常會包含一或更多記憶體裝置及一或更多處理器。處理器可包含CPU或電腦、類比及/或數位輸入/輸出連接部、歩進馬達控制板等。
在若干實施例中,控制器200控制ALD或MLD設備(亦即,塗佈系統)的所有活動。系統控制器200執行包含用於以下者之指令集合的系統控制軟體:控制ALD或MLD障壁塗佈製程、反應物及惰性氣體的流率、排放速率及溫度及該等反應物及惰性氣體之相關的混合、一或更多加熱器150之溫度、流體處理元件110之內部中的壓力、及塗佈製程的其它參數。在一些實施例中,可運用其它儲存在與控制器相關聯之記憶體裝置上的電腦程式。
通常會有與控制器200相關聯的使用者介面。使用者介面可包含顯示螢幕、設備及/或製程條件之圖形軟體顯示、及使用者輸入裝置(像是指向裝置、鍵盤、觸控螢幕、麥克風等)。
非暫態電腦機器可讀取媒體(non-transient computer machine-readable medium)可包含用於ALD或MLD設備(亦即,塗佈系統)之控制的程式指令。用以控制處理操作的電腦程式碼可以任何習知的電腦可讀程式語言撰寫:例如組合語言、C、C++、Pascal、Fortran、或其它者。編譯之目標碼或腳本係由處理器執行以執行在程式中識別之任務。
用以監測製程的訊號可由系統控制器之類比及/或數位輸入連接部提供。用以控制製程之訊號係輸出在設備之類比及數位輸出連接部上。
雖然已參照其具體實施例詳加描述在流體處理元件之內部表面上形成ALD或MLD障壁塗層的塗佈系統及方法,然而對於該領域中具有通常知識者顯而易見的是,在不偏離隨附請求項之範圍的情況下可做出各種改變及修改,並可運用相當者。
100‧‧‧氣體輸送系統
105‧‧‧入口
110‧‧‧流體處理元件
110a‧‧‧第一流體處理元件
110b‧‧‧第二流體處理元件
115‧‧‧出口
120‧‧‧排放系統
150‧‧‧加熱器
163‧‧‧內部流體潤濕表面
164‧‧‧ALD或MLD障壁塗層
200‧‧‧系統控制器
圖1顯示根據在此揭露實施例之示範塗佈系統。
圖2顯示根據在此揭露實施例之示範塗佈系統。
圖3顯示根據在此揭露實施例之示範流體處理元件。
圖4顯示根據在此揭露實施例之示範流體處理元件。
Claims (17)
- 一種供半導體基板處理設備之真空腔室用的流體處理元件,該流體處理元件包含內部的流體潤濕表面且在內部的該等流體潤濕表面上包含原子層沉積(ALD)或分子層沉積(MLD)障壁塗層,其中包含該ALD或MLD障壁塗層的該等流體潤濕表面係用以在半導體基板處理製程期間受到製程氣體及/或流體接觸,其中該ALD或MLD障壁塗層保護底下的該等流體潤濕表面免受侵蝕及/或腐蝕。
- 如申請專利範圍第1項之供半導體基板處理設備之真空腔室用的流體處理元件,其中該流體處理元件為該半導體基板處理設備之該真空腔室的一排放組件、一氣體輸送系統、一氣體盒、一氣體棒、一近接頭、一空氣過濾單元、一去離子水循環系統、一設施管線、一氣體管線、包含一氣體切換部份之一氣體分散系統、一溫度控制頂板、一溫度控制底板、及/或一擴散件。
- 如申請專利範圍第1項之供半導體基板處理設備之真空腔室用的流體處理元件,其中該ALD障壁塗層包含鉭(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)、鉿(Hf)、鉬(Mo)、鈮(Nb)、釩(V)、釕(Ru)及/或鉻(Cr)及其混合物及/或合金。
- 如申請專利範圍第1項之供半導體基板處理設備之真空腔室用的流體處理元件,其中該ALD障壁塗層為:(a)氧化物、氮化物、或氟化物材料;及/或(b)氧化鋁(Al2O3)。
- 如申請專利範圍第1項之供半導體基板處理設備之真空腔室用的流體處理元件,其中該MLD障壁塗層為: (a)聚醯胺、聚醯亞胺、聚脲、聚硫脲、聚氨酯、聚甲亞胺(polyazomethine)、或聚酯材料;及/或(b)有機材料、或有機無機混成材料。
- 如申請專利範圍第1項之供半導體基板處理設備之真空腔室用的流體處理元件,其中該ALD或MLD障壁塗層之厚度為約0.1至500nm或更大。
- 如申請專利範圍第1項之供半導體基板處理設備之真空腔室用的流體處理元件,其中內部的該等流體潤濕表面包含複數元件,該複數元件係在形成該ALD或MLD障壁塗層之前預先組裝並真空密封。
- 如申請專利範圍第7項之供半導體基板處理設備之真空腔室用的流體處理元件,該複數元件在預先組裝時係配置成形成該ALD或MLD障壁塗層的製程空間。
- 一種在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,其中該流體處理元件之內部的該等流體潤濕表面構成用以沉積該ALD或MLD障壁塗層之製程區域,該方法包含:預先組裝複數元件以形成具有一入口及一出口的該流體處理元件,其中該流體處理元件在該流體處理元件之第一端係透過該入口而連接至一氣體供應系統,且一排放系統係連接於該流體處理元件之第二端;將來自該氣體供應系統的原子層沉積氣體或分子層沉積氣體依序注射至該流體處理元件之該入口內;提供一ALD或MLD製程以在內部的該等流體潤濕表面上形成該ALD或MLD障壁塗層; 利用該排放系統從該出口依序排放該等原子層沉積氣體或該等分子層沉積氣體;及將該流體處理元件與該氣體供應系統及該排放系統斷開;其中將該流體處理元件安裝在一半導體基板處理設備之真空腔室之內、上游、或下游。
- 如申請專利範圍第9項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,其中將來自該氣體供應系統的該等原子層沉積氣體或該等分子層沉積氣體依序注射至該流體處理元件之該入口內包含:(a)將一第一反應物氣體之脈衝注射在該流體處理元件之內部的該等流體潤濕表面上;及(b)將一第二反應物氣體之脈衝注射在該流體處理元件之內部的該等流體潤濕表面上以與該第一反應物氣體反應而在該流體處理元件之內部的該等流體潤濕表面上形成該ALD或MLD障壁塗層;或(c)重複(a)及(b)至少兩次。
- 如申請專利範圍第10項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,更包含:(a)在注射該第一反應物氣體之脈衝以後利用該排放系統透過該出口排放多餘的該第一反應物氣體;及(b)在注射該第二反應物氣體之脈衝以後利用該排放系統透過該出口排放多餘的該第二反應物氣體及(複數)反應副產物;或 (c)重複(a)排放多餘的該第一反應物氣體及(b)排放多餘的該第二反應物氣體至少兩次。
- 如申請專利範圍第9項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,更包含:(a)將該流體處理元件之內部的該等流體潤濕表面加熱至預定溫度,同時在內部的該等流體潤濕表面上形成該ALD或MLD障壁塗層;及/或(b)在形成該ALD或MLD障壁塗層之前將該流體處理元件的內部的該等流體潤濕表面真空密封。
- 如申請專利範圍第9項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,其中預先組裝該複數元件更包含將複數流體處理元件配置成使得每一流體處理元件之內部的該等流體潤濕表面係與彼此流體連通,且可在每一個別之流體處理元件的內部的該等流體潤濕表面上形成該ALD或MLD障壁塗層。
- 如申請專利範圍第9項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,其中當將該流體處理元件裝設為該半導體基板處理設備之該真空腔室的一部份時,該流體處理元件之內部的該等流體潤濕表面並未曝露於該真空腔室之反應器空間。
- 如申請專利範圍第9項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方 法,其中預先組裝該複數元件包含將該複數元件真空密封,其中該ALD或MLD障壁塗層在該真空密封上形成一膜層。
- 如申請專利範圍第15項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,其中該複數元件之該真空密封使用該複數元件之二者之間的至少一O型環。
- 如申請專利範圍第9項之在流體處理元件之內部的流體潤濕表面上為該流體處理元件提供原子層沉積(ALD)或分子層沉積(MLD)障壁塗層的方法,其中該ALD或MLD障壁塗層僅形成於該流體處理元件的內部的該等流體潤濕表面上。
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Also Published As
Publication number | Publication date |
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SG10201408611YA (en) | 2015-07-30 |
KR102410093B1 (ko) | 2022-06-16 |
KR20150079483A (ko) | 2015-07-08 |
US9873940B2 (en) | 2018-01-23 |
US20180127868A1 (en) | 2018-05-10 |
US20150184296A1 (en) | 2015-07-02 |
TW201539142A (zh) | 2015-10-16 |
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