TWI654481B - Exposure device - Google Patents

Exposure device

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Publication number
TWI654481B
TWI654481B TW107125221A TW107125221A TWI654481B TW I654481 B TWI654481 B TW I654481B TW 107125221 A TW107125221 A TW 107125221A TW 107125221 A TW107125221 A TW 107125221A TW I654481 B TWI654481 B TW I654481B
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TW
Taiwan
Prior art keywords
substrate
projection optical
pattern
optical systems
rotating
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Application number
TW107125221A
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Chinese (zh)
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TW201841048A (en
Inventor
熊澤雅人
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日商尼康股份有限公司
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Publication of TW201841048A publication Critical patent/TW201841048A/en
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Publication of TWI654481B publication Critical patent/TWI654481B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/24Curved surfaces

Abstract

光罩於圍繞特定之軸線(J)所形成之外周面具有圖案(Pm),上述外周面包含形成中心點設置於上述軸線上之球面之一部分之部分球面(Ma),上述圖案設置於上述部分球面。 The photomask has a pattern (Pm) on an outer peripheral surface formed around a specific axis (J). The outer peripheral surface includes a part of a spherical surface (Ma) forming a part of a spherical surface whose center point is disposed on the axis. Sphere.

Description

曝光裝置    Exposure device   

本發明係關於一種光罩、光罩單元、曝光裝置、基板處理裝置及元件製造方法。 The present invention relates to a photomask, a photomask unit, an exposure device, a substrate processing device, and a device manufacturing method.

本申請案基於2012年3月7日申請之日本專利特案2012-50664號且主張優先權,將其內容引用於本文。 This application is based on Japanese Patent Application No. 2012-50664 filed on March 7, 2012 and claims priority, the content of which is incorporated herein by reference.

作為構成顯示器裝置等顯示裝置之顯示元件,眾所周知有例如液晶顯示元件、有機電致發光(有機EL,Organic Electroluminescence)元件、用於電子紙之電泳元件等。 As a display element constituting a display device such as a display device, a liquid crystal display element, an organic electroluminescence (Organic Electroluminescence) element, an electrophoretic element for electronic paper, and the like are well known.

目前,作為該等顯示元件,如下之主動元件(active device)成為主流,其於基板表面形成被稱為薄膜電晶體之開關元件(TFT,Thin Film Transistor,薄膜電晶體),並於該基板上形成各者之顯示元件。 At present, as such display elements, the following active devices have become mainstream, and a switching element (TFT, Thin Film Transistor) called a thin film transistor is formed on the surface of a substrate, and the substrate is formed on the substrate. Form each display element.

近年來,提出有於片狀之基板(例如膜構件等)上形成顯示元件之技術。作為此種技術,眾所周知有例如被稱為捲對捲方式(以下僅表述為「繞捲方式」)之方法(例如參照專利文獻1)。 In recent years, a technique for forming a display element on a sheet-like substrate (such as a film member) has been proposed. As such a technique, a method called a roll-to-roll method (hereinafter, referred to simply as a “winding method”) is well known (for example, refer to Patent Document 1).

繞捲方式係將捲於基板供給側之供給用輥之1個片狀基板(例如帶狀之膜構件)送出,並且一面將送出之基板以基板回收側之回收用輥捲取一面搬送基板。 The winding method is to send out a sheet substrate (for example, a tape-shaped film member) that is wound on a supply roller on the substrate supply side, and to transport the substrate while winding the sent substrate with a recovery roller on the substrate recovery side.

於自將基板送出至捲取為止之期間,藉由複數個處理裝置形成構成TFT之閘極電極、閘極氧化膜、半導體膜、源極/汲極電極等。其後,於基板上依序形成顯示元件之其他構成要素。例如於在基板上形成有機EL 元件之情形時,於基板上依序形成發光層、陽極、陰極、電路等。 The gate electrode, the gate oxide film, the semiconductor film, the source / drain electrode, etc. constituting the TFT are formed by a plurality of processing devices from the time when the substrate is taken out to the time when the substrate is taken up. Thereafter, other constituent elements of the display element are sequentially formed on the substrate. For example, when an organic EL element is formed on a substrate, a light-emitting layer, an anode, a cathode, and a circuit are sequentially formed on the substrate.

該等構成要素存在使用例如以經由光罩之曝光光曝光基板之曝光裝置等,使用例如光微影法而形成之情形。 These constituent elements may be formed using, for example, a photolithography method using an exposure device that exposes a substrate with exposure light through a photomask.

作為曝光裝置之光罩之一例,眾所周知有例如圓筒型光罩。此種圓筒型光罩具有含有圖案之旋轉體。該旋轉體形成為例如圓筒形狀或圓柱形狀,於其圓筒面上形成有圖案。 As an example of a photomask of an exposure apparatus, a cylindrical photomask is known, for example. This cylindrical photomask has a rotating body containing a pattern. The rotating body is formed into, for example, a cylindrical shape or a cylindrical shape, and a pattern is formed on a cylindrical surface thereof.

藉由使用圓筒型光罩,無需使平台往返運動、或使用保持光罩之複數個平台,從而可降低成本。又,可藉由使被曝光體向一方向移動而將圖案轉印於被曝光體上之複數個部位,因此可減少平台之加減速之次數。其結果為可提高曝光精度。 By using a cylindrical mask, there is no need to move the platform back and forth or use a plurality of platforms holding the mask, thereby reducing costs. In addition, the pattern can be transferred to a plurality of positions on the exposed body by moving the exposed body in one direction, so the number of times of acceleration and deceleration of the platform can be reduced. As a result, exposure accuracy can be improved.

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

[專利文獻1]國際公開第2006/100868號 [Patent Document 1] International Publication No. 2006/100868

然而,上述曝光處理中,為了將圓筒面上之圖案像投影於作為平面之基板上,必需進行用以修正像面之光學設計,產生構造變得複雜之問題。 However, in the above exposure processing, in order to project a pattern image on a cylindrical surface onto a substrate that is a flat surface, it is necessary to perform an optical design to correct the image surface, which causes a problem that the structure becomes complicated.

本發明之態樣之目的在於提供一種可防止構造之複雜化之光罩、光罩單元、曝光裝置、基板處理裝置及元件製造方法。 An object of aspects of the present invention is to provide a photomask, a photomask unit, an exposure device, a substrate processing device, and a device manufacturing method that can prevent the structure from being complicated.

根據本發明之第1態樣,提供一種光罩,其係於圍繞特定之軸線所形成之外周面具有圖案者,且上述外周面包含形成中心點設置於上述軸線上之球面之一部分之部分球面,上述圖案設置於上述部分球面。 According to a first aspect of the present invention, there is provided a photomask, which is formed on a peripheral surface having a pattern formed around a specific axis, and the peripheral surface includes a part of a spherical surface forming a part of a spherical surface whose center point is disposed on the axis. The pattern is arranged on the part of the spherical surface.

根據本發明之第2態樣,提供一種光罩單元,其具備複數個 本發明之第1態樣之光罩,複數個上述光罩係分別使上述軸線相互平行而配置。 According to a second aspect of the present invention, there is provided a photomask unit including a plurality of photomasks according to the first aspect of the present invention, and the plurality of photomasks are arranged so that the axes are parallel to each other.

根據本發明之第3態樣,提供一種曝光裝置,其係將圖案轉印於基板者,具備:支撐裝置,其支撐於圍繞特定之軸線所形成之外周面具有上述圖案的本發明之第1態樣之光罩;及投影光學系統,其將支撐於上述支撐裝置之上述光罩之上述圖案之像投影於上述基板;且上述投影光學系統具有與上述光罩之上述部分球面之曲率半徑對應之大小之負的佩茲法爾和。 According to a third aspect of the present invention, there is provided an exposure device that transfers a pattern to a substrate, and includes a supporting device that supports the first aspect of the present invention having the above pattern on an outer peripheral surface formed around a specific axis Aspects of the mask; and a projection optical system that projects an image of the pattern of the mask supported on the supporting device onto the substrate; and the projection optical system has a radius of curvature corresponding to the partial spherical surface of the mask The size of Pezfal and the negative.

根據本發明之第4態樣,提供一種曝光裝置,其係將圖案轉印於基板者,具備:支撐裝置,其支撐具備複數個於圍繞特定之軸線所形成之外周面具有上述圖案之光罩的本發明之第2態樣之光罩單元;及複數個投影光學系統,其等對應於支撐於上述支撐裝置之複數個上述光罩之各者而設置,將上述圖案之像投影於上述基板;且上述投影光學系統具有與上述光罩之上述部分球面之曲率半徑對應之大小之負的佩茲法爾和。 According to a fourth aspect of the present invention, there is provided an exposure device that transfers a pattern to a substrate, and includes: a support device that supports a plurality of photomasks having the above pattern on an outer peripheral surface formed around a specific axis; A mask unit according to a second aspect of the present invention; and a plurality of projection optical systems, which are provided corresponding to each of the plurality of masks supported by the supporting device, and project an image of the pattern onto the substrate And the projection optical system has a negative Pezfal sum of a magnitude corresponding to a radius of curvature of the partial spherical surface of the mask.

根據本發明之第5態樣,提供一種基板處理裝置,其係對帶狀之基板進行處理者,具備:基板搬送部,其沿上述基板之長度方向搬送上述基板;及基板處理部,其沿上述基板搬送部之上述基板之搬送路徑設置,對沿上述搬送路徑而搬送之上述基板進行處理;且上述基板處理部包含將圖案轉印於上述基板之本發明之第4態樣之曝光裝置。 According to a fifth aspect of the present invention, there is provided a substrate processing apparatus for processing a strip-shaped substrate, comprising: a substrate transfer unit that transfers the substrate along a length direction of the substrate; and a substrate processing unit that transfers the substrate along The substrate transfer section of the substrate transfer section is configured to process the substrate transferred along the transfer path; and the substrate processing section includes an exposure device of a fourth aspect of the present invention that transfers a pattern to the substrate.

根據本發明之第6態樣,提供一種元件製造方法,其係對基板進行處理而製造元件者,包含如下步驟:使用本發明之第4態樣之曝光裝置,將圖案轉印於上述基板;及基於上述圖案而對轉印有上述圖案之上述基板進行加工。 According to a sixth aspect of the present invention, there is provided a component manufacturing method which includes processing a substrate to manufacture a component, including the steps of: using an exposure device of the fourth aspect of the present invention to transfer a pattern onto the substrate; And processing the substrate on which the pattern is transferred based on the pattern.

本發明之態樣中,可提供一種能夠防止構造之複雜化之光 罩。 In one aspect of the present invention, a mask can be provided which can prevent the structure from being complicated.

20‧‧‧光源部 20‧‧‧Light source department

60‧‧‧處理裝置 60‧‧‧treatment device

70‧‧‧搬送裝置 70‧‧‧ transfer device

80‧‧‧對準裝置 80‧‧‧ alignment device

81‧‧‧對準相機 81‧‧‧ aiming at the camera

82‧‧‧調整裝置 82‧‧‧ adjusting device

AS‧‧‧孔徑光闌(光路限制構件) AS‧‧‧aperture diaphragm (light path restriction member)

BS‧‧‧分光鏡 BS‧‧‧ Beamsplitter

CL‧‧‧基板回收部 CL‧‧‧ Substrate Recycling Department

CONT‧‧‧控制部 CONT‧‧‧Control Department

EL‧‧‧曝光光 EL‧‧‧Exposure light

EX‧‧‧曝光裝置 EX‧‧‧Exposure device

FB‧‧‧片材基板(基板) FB‧‧‧ Sheet Substrate (Substrate)

Fp‧‧‧被處理面 Fp‧‧‧ treated surface

FPA(FPA1)‧‧‧基板處理裝置 FPA (FPA1) ‧‧‧Substrate processing equipment

IB‧‧‧照明光 IB‧‧‧illumination light

IU、ILU‧‧‧照明光學系統 IU, ILU ‧‧‧lighting optical system

J‧‧‧中心軸線(特定之軸線) J‧‧‧center axis (specific axis)

L11、L21‧‧‧光學元件(第1部分光學系統) L11, L21 ‧‧‧ Optical Elements (Part 1 Optical System)

L12、L14、L15、L16、L17、L18、L19、L22、L23、L24、L25、L27、L28、L29、L32、L33‧‧‧光學元件 L12, L14, L15, L16, L17, L18, L19, L22, L23, L24, L25, L27, L28, L29, L32, L33 ...

L13、L26、L31、L35‧‧‧凹面鏡 L13, L26, L31, L35 ‧‧‧ concave mirror

L20、L30、L36‧‧‧光學元件(第2部分光學系統) L20, L30, L36 ‧‧‧ Optics (Part 2 Optical System)

L34‧‧‧凸面鏡 L34‧‧‧ convex mirror

M‧‧‧光罩 M‧‧‧Photomask

M'‧‧‧圓筒體 M'‧‧‧ cylinder

M1、M2、M3、M21、M32‧‧‧平面反射鏡 M1, M2, M3, M21, M32‧‧‧ flat mirror

M31‧‧‧平面反射鏡(第1部分光學系統) M31‧‧‧Plane Mirror (Part 1 Optical System)

Ma‧‧‧部分球面 Ma‧‧‧Spherical

MJ‧‧‧旋轉軸(軸部) MJ‧‧‧Rotary shaft (shaft part)

MJ'‧‧‧共用旋轉軸 MJ'‧‧‧shared rotation axis

Mp‧‧‧圖案面 Mp‧‧‧Pattern

MST‧‧‧支撐裝置 MST‧‧‧Support device

MU‧‧‧光罩單元 MU‧‧‧Mask unit

PA‧‧‧圖案區域 PA‧‧‧Pattern area

PA1、PA2、PA3‧‧‧投影區域 PA1, PA2, PA3‧‧‧‧ projection area

PN‧‧‧非圖案區域 PN‧‧‧Unpatterned area

Pm、Pm'、Pm1、Pm2、Pm3‧‧‧圖案 Pm, Pm ', Pm1, Pm2, Pm3‧‧‧ patterns

PR‧‧‧基板處理部 PR‧‧‧Substrate Processing Department

PU、PU1、PU2、PU3‧‧‧投影光學系統 PU, PU1, PU2, PU3‧‧‧ projection optical system

R‧‧‧輥裝置 R‧‧‧ roller device

RD‧‧‧旋轉驅動裝置(旋轉裝置) RD‧‧‧Rotary drive device (rotary device)

RST‧‧‧平台 RST‧‧‧Platform

RT‧‧‧平面光罩 RT‧‧‧Plane Mask

SU‧‧‧基板供給部 SU‧‧‧ Substrate Supply Department

XYZ‧‧‧正交座標系 XYZ‧‧‧ Orthogonal Coordinate System

圖1係表示本實施形態之基板處理裝置之構成之圖。 FIG. 1 is a diagram showing the configuration of a substrate processing apparatus according to this embodiment.

圖2係表示曝光裝置之概略構成之圖。 FIG. 2 is a diagram showing a schematic configuration of an exposure apparatus.

圖3係自-X側觀察光罩之前視圖。 Figure 3 is a front view of the photomask viewed from the -X side.

圖4係表示投影光學系統之諸要素之值之圖。 FIG. 4 is a diagram showing values of elements of a projection optical system.

圖5係表示形成為非球面之每個面編號之非球面資料之圖。 FIG. 5 is a diagram showing aspherical data of each surface number formed as an aspherical surface.

圖6係表示第2實施形態之曝光裝置之概略構成之圖。 Fig. 6 is a diagram showing a schematic configuration of an exposure apparatus according to a second embodiment.

圖7係表示第2實施形態之投影光學系統之諸要素之值的圖。 FIG. 7 is a diagram showing values of elements of the projection optical system according to the second embodiment.

圖8係表示第2實施形態之形成為非球面之每個面編號之非球面資料的圖。 FIG. 8 is a view showing aspherical surface data of each surface number formed as an aspherical surface in the second embodiment.

圖9係表示第3實施形態之曝光裝置之概略構成之圖。 Fig. 9 is a diagram showing a schematic configuration of an exposure apparatus according to a third embodiment.

圖10係表示第3實施形態之投影光學系統之諸要素之值的圖。 FIG. 10 is a diagram showing values of elements of a projection optical system according to a third embodiment.

圖11係表示第3實施形態之形成為非球面之每個面編號之非球面資料的圖。 FIG. 11 is a view showing aspherical data of each surface number formed as an aspherical surface in the third embodiment.

圖12係表示具有光罩單元之曝光裝置之概略構成之圖。 FIG. 12 is a diagram showing a schematic configuration of an exposure apparatus having a mask unit.

圖13係用以說明微元件之製造步驟之一例之流程圖。 FIG. 13 is a flowchart illustrating an example of manufacturing steps of a micro-device.

圖14係說明製成本實施形態之光罩之方法之一例的圖。 FIG. 14 is a diagram illustrating an example of a method of forming a mask according to this embodiment.

以下,參照圖1至圖14對本發明之光罩、光罩單元、曝光裝置、基板處理裝置及元件製造方法之實施形態進行說明。 Hereinafter, embodiments of a photomask, a photomask unit, an exposure device, a substrate processing device, and a device manufacturing method according to the present invention will be described with reference to FIGS. 1 to 14.

(第1實施形態) (First Embodiment)

圖1係表示本發明之第1實施形態之基板處理裝置FPA之構成的圖。 FIG. 1 is a diagram showing a configuration of a substrate processing apparatus FPA according to a first embodiment of the present invention.

如圖1所示,基板處理裝置FPA具有:基板供給部SU,其供給片材基板(例如帶狀之膜構件)FB;基板處理部PR,其對片材基板FB之表面(被 處理面)進行處理;基板回收部CL,其回收片材基板FB;及控制部CONT,其控制該等各部分。基板處理裝置FPA例如設置於工廠等中。 As shown in FIG. 1, the substrate processing apparatus FPA includes a substrate supply unit SU that supplies a sheet substrate (for example, a strip-shaped film member) FB, and a substrate processing unit PR that faces the surface (processed surface) of the sheet substrate FB. Processing; a substrate recovery section CL that recovers the sheet substrate FB; and a control section CONT that controls each of these sections. The substrate processing apparatus FPA is installed in, for example, a factory.

以下,於基板處理裝置FPA之說明中,設定XYZ正交座標系,一面參照該XYZ正交座標系一面對各構件之位置關係進行說明。 Hereinafter, in the description of the substrate processing apparatus FPA, the XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described while referring to the XYZ orthogonal coordinate system.

XYZ正交座標系中,將片材基板FB之搬送方向(片材基板FB之長度方向)設為X軸方向,將與片材基板FB之搬送方向正交之方向(片材基板FB之短邊方向或片材基板FB之寬度方向)設為Y軸方向,將與X軸方向及Y軸方向之各者正交之方向設為Z軸方向。 In the XYZ orthogonal coordinate system, the transport direction of the sheet substrate FB (the length direction of the sheet substrate FB) is set to the X-axis direction, and the direction orthogonal to the transport direction of the sheet substrate FB (the shortness of the sheet substrate FB) is set. The side direction or the width direction of the sheet substrate FB) is the Y-axis direction, and the direction orthogonal to each of the X-axis direction and the Y-axis direction is the Z-axis direction.

基板處理裝置FPA係於自基板供給部SU送出片材基板FB至以基板回收部CL回收片材基板FB之期間,對片材基板FB之表面執行各種處理之捲對捲方式(以下僅表述為「繞捲方式」)的裝置。 The substrate processing apparatus FPA is a roll-to-roll method that performs various processes on the surface of the sheet substrate FB from the time when the sheet substrate FB is sent from the substrate supply unit SU to the recovery of the sheet substrate FB by the substrate recovery unit CL (hereinafter, it is only expressed as "Winding mode").

基板處理裝置FPA可用於在片材基板FB上形成例如有機EL元件、液晶顯示元件等顯示元件(電子元件)之情形。當然,於形成該等元件以外之元件之情形時亦可使用基板處理裝置FPA。 The substrate processing apparatus FPA can be used when a display element (electronic element) such as an organic EL element or a liquid crystal display element is formed on the sheet substrate FB. Of course, the substrate processing apparatus FPA can also be used when forming elements other than these elements.

於基板處理裝置FPA中,作為成為處理對象之片材基板FB,例如可使用樹脂膜或不鏽鋼等之箔(foil)。 In the substrate processing apparatus FPA, as the sheet substrate FB to be processed, for example, a foil such as a resin film or stainless steel can be used.

例如,樹脂膜可使用聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯-乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚接酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂等材料。 For example, as the resin film, polyethylene resin, polypropylene resin, polyester resin, ethylene-ethylene copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, and polyacrylate resin can be used. , Polystyrene resin, vinyl acetate resin and other materials.

片材基板FB之Y方向(短邊方向)之尺寸例如形成為1m~2m左右,X方向(長邊方向)之尺寸例如形成為10m以上。 The size in the Y direction (short side direction) of the sheet substrate FB is, for example, about 1 to 2 m, and the size in the X direction (long side direction) is, for example, 10 m or more.

當然,該尺寸僅僅為一例,並不限定於此。例如片材基板FB之Y方向之尺寸可為1m或50cm以下,亦可為2m以上。又,片材基板FB之X方向之尺寸亦可為10m以下。 Of course, this size is only an example, and it is not limited to this. For example, the dimension in the Y direction of the sheet substrate FB may be 1 m or less than 50 cm, or may be 2 m or more. The dimension in the X direction of the sheet substrate FB may be 10 m or less.

片材基板FB例如以具有可撓性之方式形成。此處,所謂可 撓性,係指例如即便對基板施加至少自重程度之特定之力,亦可於不存在線斷或斷裂之情況下使該基板彎曲之性質。又,例如藉由上述特定之力而彎曲之性質亦包含於可撓性中。又,上述可撓性係根據基板之材質、大小、厚度或溫度等環境等而變化。 The sheet substrate FB is formed to have flexibility, for example. Here, the term "flexible" refers to a property that, for example, the substrate can be bent without a wire break or break even if a specific force of at least a certain degree of self-weight is applied to the substrate. Further, for example, the property of being bent by the above-mentioned specific force is also included in the flexibility. The flexibility described above varies depending on the environment such as the material, size, thickness, and temperature of the substrate.

再者,作為片材基板FB,可使用1個帶狀之基板,亦可為將複數個單位基板連接而形成為帶狀之構成。 In addition, as the sheet substrate FB, one strip-shaped substrate may be used, or a configuration in which a plurality of unit substrates are connected and formed into a strip shape may be used.

片材基板FB即便受到相對較高溫(例如200℃左右)之熱,亦可以使尺寸實質上不變化(熱變形較小)之方式減小熱膨脹係數。例如,可將無機填料混合於樹脂膜中而減小熱膨脹係數。作為無機填料之例,可列舉氧化鈦、氧化鋅、氧化鋁、氧化矽等。 Even if the sheet substrate FB is subjected to a relatively high temperature (for example, about 200 ° C.), the thermal expansion coefficient can be reduced in such a manner that the size does not change substantially (the thermal deformation is small). For example, the inorganic filler may be mixed in a resin film to reduce the thermal expansion coefficient. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide.

基板供給部SU係將例如捲成輥狀之片材基板FB送出並供給至基板處理部PR。於基板供給部SU,設置有例如纏繞片材基板FB之軸部或使該軸部旋轉之旋轉驅動源等。此外,亦可為設置有例如覆蓋捲成輥狀之狀態之片材基板FB之蓋部等之構成。 The substrate supply unit SU sends out and supplies the sheet substrate FB wound into a roll shape to the substrate processing unit PR, for example. The substrate supply unit SU is provided with, for example, a shaft portion around which the sheet substrate FB is wound or a rotation drive source for rotating the shaft portion. In addition, it is also possible to have a configuration in which a cover portion or the like is provided to cover the sheet substrate FB in a state of being rolled into a roll.

基板回收部CL將來自基板處理部PR之片材基板FB捲取為例如輥狀而回收。於基板回收部CL,與基板供給部SU同樣地設置有用以纏繞片材基板FB之軸部或使該軸部旋轉之旋轉驅動源、覆蓋經回收之片材基板FB之蓋部等。 The substrate recovery unit CL winds up the sheet substrate FB from the substrate processing unit PR into, for example, a roll shape and recovers it. In the substrate recovery portion CL, a rotation drive source for winding or rotating the shaft portion of the sheet substrate FB, a cover portion covering the recovered sheet substrate FB, and the like are provided in the same manner as the substrate supply portion SU.

再者,於基板處理部PR中,於將片材基板FB切斷為例如面板狀之情形等時,例如亦可為以將片材基板FB重疊之狀態回收等以與捲成輥狀之狀態不同之狀態回收片材基板FB之構成。 Furthermore, in the substrate processing unit PR, when the sheet substrate FB is cut into, for example, a panel shape, for example, the sheet substrate FB may be recovered in a state where the sheet substrate FB is overlapped and wound in a roll shape. The constitution of the sheet substrate FB is recovered in different states.

基板處理部PR將自基板供給部SU供給之片材基板FB搬送至基板回收部CL,並且於搬送之過程中對片材基板FB之被處理面Fp進行處理。基板處理部PR具有例如處理裝置60、搬送裝置70及對準裝置80等。 The substrate processing unit PR transfers the sheet substrate FB supplied from the substrate supply unit SU to the substrate recovery unit CL, and processes the processed surface Fp of the sheet substrate FB during the transfer. The substrate processing unit PR includes, for example, a processing device 60, a transfer device 70, an alignment device 80, and the like.

處理裝置60具有用以相對於片材基板FB之被處理面Fp形 成例如有機EL元件之各種裝置。作為此種裝置,例如可列舉用以在被處理面Fp上形成隔壁之隔壁形成裝置、用以形成用於驅動有機EL元件之電極之電極形成裝置、用以形成發光層之發光層形成裝置等。 The processing device 60 has various devices for forming, for example, an organic EL element with respect to the processing surface Fp of the sheet substrate FB. Examples of such a device include a partition wall forming device for forming a partition wall on the surface to be processed Fp, an electrode forming device for forming an electrode for driving an organic EL element, and a light emitting layer forming device for forming a light emitting layer. .

更具體而言,可列舉液滴塗佈裝置(例如噴墨型塗佈裝置、旋轉塗佈型塗佈裝置等)、蒸鍍裝置、濺鍍裝置、大氣壓CVD(Chemical Vapor Deposition,化學氣相沈積)裝置、霧沈積裝置、無電解電鍍裝置等成膜裝置或曝光裝置、顯影裝置、表面改質裝置、清洗裝置等。該等各裝置適當設置於例如片材基板FB之搬送路徑上。 More specifically, a droplet coating device (e.g., an inkjet type coating device, a spin coating type coating device, etc.), a vapor deposition device, a sputtering device, and atmospheric pressure CVD (Chemical Vapor Deposition) ) Equipment, mist deposition equipment, electroless plating equipment and other film-forming equipment or exposure equipment, developing equipment, surface modification equipment, cleaning equipment, etc. Each of these devices is appropriately provided on, for example, a conveyance path of the sheet substrate FB.

本實施形態中,於構成處理裝置60之各種裝置中,以曝光裝置為主體進行說明。 In the present embodiment, among various devices constituting the processing device 60, an exposure device will be mainly described.

搬送裝置70具有於基板處理部PR內例如將片材基板FB向基板回收部CL側搬送之輥裝置R。輥裝置R沿片材基板FB之搬送路徑設置有例如複數個。於複數個輥裝置R中之至少一部分輥裝置R安裝有驅動機構(未圖示)。 The transfer device 70 includes a roller device R that transfers, for example, the sheet substrate FB to the substrate recovery portion CL side in the substrate processing unit PR. A plurality of roller devices R are provided along the conveyance path of the sheet substrate FB, for example. A driving mechanism (not shown) is attached to at least a part of the plurality of roller devices R.

藉由將此種輥裝置R旋轉,片材基板FB沿X軸方向進行搬送。亦可為複數個輥裝置R中之例如一部分輥裝置R可沿與搬送方向正交之方向移動地設置之構成。 By rotating such a roller device R, the sheet substrate FB is conveyed in the X-axis direction. A configuration may be adopted in which, for example, a part of the plurality of roller devices R is movably provided in a direction orthogonal to the conveying direction.

對準裝置80對片材基板FB進行對準動作。對準裝置80具有:對準相機81,其檢測片材基板FB之位置狀態;及調整裝置82,其基於對準相機81之檢測結果而將片材基抜FB於X方向、Y方向、Z方向、θX方向、θY方向、θZ方向進行微調整。 The alignment device 80 performs an alignment operation on the sheet substrate FB. The alignment device 80 includes: an alignment camera 81 that detects the position state of the sheet substrate FB; and an adjustment device 82 that positions the sheet base FB in the X direction, the Y direction, and the Z direction based on the detection result of the alignment camera 81. Direction, θX direction, θY direction, θZ direction for fine adjustment.

對準相機81係檢測例如形成於片材基板FB之對準標記等,將檢測結果發送至控制部CONT。控制部CONT基於該檢測結果求出片材基板之位置資訊,基於該位置資訊控制利用調整裝置82之調整量。 The alignment camera 81 detects, for example, an alignment mark formed on the sheet substrate FB, and sends the detection result to the control unit CONT. The control unit CONT obtains the position information of the sheet substrate based on the detection result, and controls the adjustment amount using the adjustment device 82 based on the position information.

圖2係表示用作處理裝置60之曝光裝置EX之概略構成之 圖。 FIG. 2 is a diagram showing a schematic configuration of an exposure device EX used as the processing device 60. As shown in FIG.

如圖2所示,曝光裝置EX係將形成於光罩M之圖案Pm之像投影於片材基板FB之裝置。曝光裝置EX具有:照明光學系統IU,其對光罩M照明曝光光;支撐裝置MST,其圍繞旋轉軸(軸部)MJ而旋轉自如地支撐光罩M;及投影光學系統PU,其投影形成於光罩M之圖案Pm之像。 As shown in FIG. 2, the exposure device EX is a device that projects an image of the pattern Pm formed on the mask M onto the sheet substrate FB. The exposure device EX includes: an illumination optical system IU that illuminates the exposure light of the mask M; a support device MST that supports the mask M in a rotatable manner around a rotation axis (axis portion) MJ; and a projection optical system PU that is formed by projection Image of the pattern Pm on the mask M.

圖3係自-X側觀察光罩M之前視圖。 FIG. 3 is a front view of the photomask M viewed from the -X side.

如圖2及圖3所示,本實施形態中之光罩M係形成為以與Y軸平行之中心軸線(特定之軸線)J為中心之實質之圓盤狀。光罩M之外周面包含形成中心點設置於上述中心軸線J上之球面之一部分的部分球面Ma。球面之中心點於沿著上述中心軸線J之方向位於部分球面Ma之實質之中央部。 As shown in FIG. 2 and FIG. 3, the mask M in this embodiment is formed into a substantially disc shape with a center axis (specific axis) J parallel to the Y axis as a center. The outer peripheral surface of the mask M includes a partial spherical surface Ma that forms a part of a spherical surface whose center point is disposed on the central axis J. The center point of the spherical surface is located at a substantial central portion of the spherical surface Ma in a direction along the above-mentioned central axis J.

圖案Pm形成於部分球面Ma中之於圓周方向去除非圖案區域PN之圖案區域PA。作為圖案Pm,可採用直接形成於球面Ma之構成或將形成有圖案Pm之片材貼設於球面Ma之構成等。 The pattern Pm is formed in the pattern area PA in which the non-pattern area PN is removed in the circumferential direction in the partial spherical surface Ma. As the pattern Pm, a configuration formed directly on the spherical surface Ma or a configuration in which a sheet on which the pattern Pm is formed is attached to the spherical surface Ma can be adopted.

形成於圖案區域PA之圖案Pm藉由反射曝光用照明光之材料及吸收該照明光之材料而圖案化。圖案Pm例如作為用以形成液晶或有機EL之顯示面板部之像素電極、TFT、配線等之電路圖案,用以形成移動終端機器用之顯示面板部及周邊電路部之電路圖案等而描畫。 The pattern Pm formed in the pattern area PA is patterned by a material that reflects the illumination light for exposure and a material that absorbs the illumination light. The pattern Pm is drawn, for example, as a circuit pattern for forming pixel electrodes, TFTs, wirings, and the like of a display panel section of a liquid crystal or organic EL, and for forming a circuit pattern of a display panel section and a peripheral circuit section for a mobile terminal device.

又,該部分球面Ma圍繞上述中心軸線J而形成為帶狀,以使通過上述球面之中心點且與正交於中心軸線J之軸交線交叉,並且包含上述軸交線與部分球面Ma之交點且相切於部分球面Ma的切平面與上述中心軸線J實質上平行之方式形成。 In addition, the partial spherical surface Ma is formed into a band shape around the center axis J so as to pass through the center point of the spherical surface and intersect an axis intersection line orthogonal to the center axis J, and includes the axis intersection line and a portion of the spherical surface Ma. A tangent plane that intersects and is tangent to a part of the spherical surface Ma is formed so as to be substantially parallel to the above-mentioned central axis J.

旋轉軸MJ係使軸線與上述中心軸線J吻合(成為軸中心)而突設於光罩M之Y方向兩側。又,旋轉軸MJ係藉由支撐裝置MST而與光罩M之外周面一同旋轉自如地保持,並且連接於旋轉驅動裝置(旋轉裝置)RD而得以賦予旋轉驅動。旋轉驅動裝置RD之驅動(即光罩M之旋轉 驅動)係藉由控制部CONT進行控制。 The rotation axis MJ is provided on both sides in the Y direction of the mask M so that the axis line coincides with the center axis J (becomes the axis center). In addition, the rotation axis MJ is rotatably held together with the outer peripheral surface of the mask M by the support device MST, and is connected to a rotation drive device (rotation device) RD to give a rotation drive. The driving of the rotary driving device RD (i.e., the rotary driving of the mask M) is controlled by the control unit CONT.

照明光學系統IU係對光罩M照明曝光光EL。照明光學系統IU具有光源部20、平面反射鏡M1、構成投影光學系統PU之一部分之光學元件(第1部分光學系統)L11及光學元件L12、凹面鏡L13、平面反射鏡M2。 The illumination optical system IU illuminates the exposure light EL to the mask M. The illumination optical system IU includes a light source section 20, a flat mirror M1, an optical element (first optical system) L11 constituting a part of the projection optical system PU, and an optical element L12, a concave mirror L13, and a flat mirror M2.

作為光源部20,可採用設置水銀燈或雷射產生裝置等光源裝置之構成、或設置複眼光學元件等形成2次光源之元件之構成。 As the light source section 20, a configuration in which a light source device such as a mercury lamp or a laser generator is provided, or a configuration in which a secondary light source such as a compound eye optical element is provided can be adopted.

投影光學系統PU係將形成於光罩M之圖案Pm之像投影於片材基板FB。投影光學系統PU具有沿曝光光EL之行進方向依序配置之上述光學元件L11、L12、凹面鏡L13、平面反射鏡M2、及光學元件L14、孔徑光闌(光路限制構件)AS、光學元件L15~L19、及光學元件(第2部分光學系統)L20。 The projection optical system PU projects an image of the pattern Pm formed on the mask M onto the sheet substrate FB. The projection optical system PU has the above-mentioned optical elements L11, L12, concave mirror L13, plane mirror M2, and optical element L14, aperture stop (optical path restriction member) AS, and optical element L15, which are sequentially arranged along the traveling direction of the exposure light EL. L19, and optical element (part 2 optical system) L20.

孔徑光闌AS係規定投影光學系統PU之數值孔徑。孔徑光闌AS配置於投影光學系統PU之與出射瞳(或入射瞳)共軛之面的瞳面之位置。又,凹面鏡L13之反射面亦配置於投影光學系統PU中之瞳面之位置。 The aperture stop AS specifies the numerical aperture of the projection optical system PU. The aperture stop AS is disposed at a position of a pupil surface of a projection optical system PU that is conjugate to an exit pupil (or an entrance pupil). In addition, the reflective surface of the concave mirror L13 is also disposed at the position of the pupil surface in the projection optical system PU.

自光源部20之曝光光EL於平面反射鏡M1及凹面鏡L13依序反射後,依序透過光學元件L12、L11而照明形成於光罩M之部分球面Ma之圖案Pm。 After the exposure light EL from the light source part 20 is sequentially reflected by the flat mirror M1 and the concave mirror L13, it sequentially passes through the optical elements L12 and L11 to illuminate the pattern Pm formed on a part of the spherical surface Ma of the mask M.

於光罩M(部分球面Ma)反射之曝光光EL由光學元件L11接收(透過)後,透過光學元件L12而於凹面鏡L13及平面反射鏡M2反射。於平面反射鏡M2反射之曝光光EL依序透過光學元件L14~L19後,藉由光學元件L20而投影於片材基板FB。 After the exposure light EL reflected by the mask M (partial spherical Ma) is received (transmitted) by the optical element L11, it passes through the optical element L12 and is reflected by the concave mirror L13 and the flat mirror M2. The exposure light EL reflected by the plane mirror M2 sequentially passes through the optical elements L14 to L19, and is projected on the sheet substrate FB through the optical element L20.

圖4中表示投影光學系統PU之諸要素之值。 The values of the elements of the projection optical system PU are shown in FIG. 4.

圖4中,於左端表示曝光光EL於上述光學元件L11、L12、凹面鏡L13、平面反射鏡M2、及光學元件L14、孔徑光闌AS、光學元件L15~L20依序 入射或出射之各光學面之面編號。 In FIG. 4, at the left end, the optical surfaces of the exposure light EL on the above-mentioned optical elements L11, L12, concave mirror L13, flat mirror M2, and optical element L14, aperture stop AS, and optical elements L15 to L20 are sequentially incident or emitted. Face number.

又,r表示各光學面之曲率半徑,d表示各光學面間之面間隔。而且,r之列中表示各光學面之近軸曲率半徑,d之列中表示各面間隔。 In addition, r represents a curvature radius of each optical surface, and d represents a surface interval between the optical surfaces. In addition, a column of r indicates a paraxial curvature radius of each optical surface, and a column of d indicates an interval between the surfaces.

圖5中表示形成為非球面之每個面編號之非球面資料。 FIG. 5 shows aspherical data of each surface number formed as an aspheric surface.

圖5中,K為圓錐係數(conic coefficient),A~F為4次、6次、8次、…之非球面係數。 In FIG. 5, K is a conic coefficient, and A to F are aspherical coefficients of 4th, 6th, 8th,...

再者,圖4及圖5中,近軸曲率半徑r之符號係將朝向物體面側(圖案Pm面側)凸出之情形設為正,面間隔d設為以光學面之前後而將符號反轉者。 In addition, in FIG. 4 and FIG. 5, the sign of the paraxial curvature radius r is set to be positive when it protrudes toward the object surface side (pattern Pm surface side), and the surface interval d is set to the symbol before and after the optical surface. Reverser.

投影光學系統PU係例如波長(曝光波長)為365nm,縮小倍率為1倍(等倍),物體側之數值孔徑NA為0.055,具有藉由上述之光學元件L11、L12、凹面鏡L13、平面反射鏡M2、及光學元件L14、孔徑光闌AS、光學元件L15~L20而設定之負的佩茲法爾和。 The projection optical system PU system has, for example, a wavelength (exposure wavelength) of 365 nm, a reduction ratio of 1 (equal magnification), a numerical aperture NA of the object side of 0.055, and the above-mentioned optical elements L11, L12, concave mirror L13, and plane mirror. M2, and the optical element L14, the aperture stop AS, and the optical elements L15 to L20 are set to a negative Pezfal sum.

此處,於由複數個光學元件所構成之光學系統中,若將i編號之光學面之焦距設為fi,將光學面之前後之折射率設為ni、ni',則佩茲法爾和Psum由下式表示。 Here, in an optical system composed of a plurality of optical elements, if the focal length of the optical surface of the i-number is set to fi and the refractive index of the optical surface is set to ni and ni ', then Pezfal and Psum is expressed by the following formula.

此時,若將像面之曲率半徑設為R0,則佩茲法爾和Psum如下。 At this time, if the curvature radius of the image plane is set to R0, Pezfal and Psum are as follows.

Psum=-1/R0 Psum = -1 / R0

例如,於凹面鏡L13之情形時,具有正功率,佩茲法爾和成為負值。如圖4所示,曲率半徑ri為負值之凹面鏡L13之焦距fi由下式表示。 For example, in the case of the concave mirror L13, it has a positive power, and the Pezfal sum becomes a negative value. As shown in FIG. 4, the focal length fi of the concave mirror L13 having a negative curvature radius ri is expressed by the following formula.

[數2] [Number 2]

又,凹面鏡L13之佩茲法爾和Psum由下式表示。 In addition, Pezfal and Psum of the concave mirror L13 are expressed by the following formula.

而且,本實施形態中,投影光學系統PU之佩茲法爾和之大小設定為與形成有圖案Pm之部分球面Ma之曲率半徑之倒數(即曲率)實質上相等。具體而言,如圖4所示,於部分球面Ma之曲率半徑為500mm之情形時,投影光學系統PU之佩茲法爾和之大小為-0.00199(≒-1/500)。 Further, in the present embodiment, the size of the Pezfal sum of the projection optical system PU is set to be substantially equal to the reciprocal (that is, curvature) of the radius of curvature of the spherical surface Ma where the pattern Pm is formed. Specifically, as shown in FIG. 4, when the curvature radius of a part of the spherical surface Ma is 500 mm, the size of the Pezfal sum of the projection optical system PU is −0.00199 (≒ −1 / 500).

藉此,形成於部分球面Ma之圖案Pm之像以實質之平面狀投影於片材基板FB之被處理面Fp。 Thereby, the image of the pattern Pm formed on the partial spherical surface Ma is projected onto the processed surface Fp of the sheet substrate FB in a substantially planar shape.

如上述般構成之基板處理裝置FPA係藉由控制部CONT之控制,以所謂之捲對捲方式(以下表述為繞捲方式)製造例如顯示基板1。以下,說明使用上述構成之基板處理裝置FPA製造顯示基板1之步驟。 The substrate processing apparatus FPA configured as described above is manufactured by, for example, the display substrate 1 in a so-called roll-to-roll method (hereinafter referred to as a winding method) under the control of the control unit CONT. Hereinafter, the steps for manufacturing the display substrate 1 using the substrate processing apparatus FPA having the above-described configuration will be described.

首先,成為於設置於基板供給部SU之輥纏繞有帶狀之片材基板FB之狀態。控制部CONT自該狀態起自基板供給部SU送出該片材基板FB,將送出之片材基板FB以基板回收部CL之輥進行捲取,而搬送片材基板FB。 First, a state is obtained in which a belt-shaped sheet substrate FB is wound on a roller provided in the substrate supply unit SU. From this state, the control unit CONT sends out the sheet substrate FB from the substrate supply unit SU, winds up the fed-out sheet substrate FB by a roller of the substrate recovery unit CL, and transfers the sheet substrate FB.

控制部CONT係於自將片材基板FB送出至捲取為止之期間,一面藉由基板處理部PR之搬送裝置70使片材基板FB於基板處理部PR內適當搬送,一面藉由處理裝置60使顯示基板1之構成要素依序形成於片材基板FB上。 The control unit CONT is used to appropriately transfer the sheet substrate FB in the substrate processing unit PR by the transfer device 70 of the substrate processing unit PR during the period from the time when the sheet substrate FB is fed to the winding, and the processing device 60 The constituent elements of the display substrate 1 are sequentially formed on the sheet substrate FB.

於進行利用處理裝置60之處理時,控制部CONT於對準裝置80進行片材基板FB之位置對準。 When the processing by the processing device 60 is performed, the control unit CONT performs the position alignment of the sheet substrate FB on the alignment device 80.

控制部CONT係於自將片材基板FB送出至捲取為止之期間,一面藉由基板處理部PR之搬送裝置70使片材基板FB於基板處理部PR內適當搬送,一面於處理裝置60中之曝光裝置EX,使光罩M之圖案Pm投影於片材基板FB之被處理面Fp。 The control unit CONT is in the processing device 60 while the sheet substrate FB is appropriately transferred in the substrate processing unit PR by the transfer device 70 of the substrate processing unit PR during the period from the time when the sheet substrate FB is fed to the winding. The exposure device EX projects the pattern Pm of the mask M onto the processed surface Fp of the sheet substrate FB.

此時,控制部CONT控制旋轉驅動裝置RD之驅動及輥裝置R之驅動,而同步驅動光罩M之圍繞旋轉軸MJ之旋轉與片材基板FB。 At this time, the control unit CONT controls the driving of the rotation driving device RD and the driving of the roller device R, and synchronously drives the rotation of the photomask M around the rotation axis MJ and the sheet substrate FB.

更詳細而言,控制部CONT係以如下方式進行驅動控制:使片材基板FB之移動速度(搬送速度)相對於光罩M所具有之部分球面Ma之圍繞旋轉軸MJ之移動速度的比,與投影光學系統PU之投影倍率(本實施形態中為等倍)相等。 More specifically, the control unit CONT performs drive control such that the ratio of the moving speed (conveying speed) of the sheet substrate FB to the moving speed of the partial spherical surface Ma of the mask M around the rotation axis MJ, It is equal to the projection magnification (equal magnification in this embodiment) of the projection optical system PU.

藉此,由照明光學系統IU所照明之旋轉之光罩M之圖案Pm之像經由投影光學系統PU,而以對應於投影倍率之大小逐次投影於片材基板FB上。 Thereby, the image of the pattern Pm of the rotating mask M illuminated by the illumination optical system IU is sequentially projected onto the sheet substrate FB through the projection optical system PU at a size corresponding to the projection magnification.

如此,本實施形態中,使用於形成球面之一部分之部分球面形成有圖案Pm之光罩M,因此無需用以修正像面之光學設計,可防止構造之複雜化。 As described above, in the present embodiment, a mask M having a pattern Pm formed on a part of the spherical surface forming a spherical surface is used. Therefore, an optical design for correcting the image plane is not required, and the structure can be prevented from being complicated.

尤其,本實施形態中,藉由使用凹面鏡L13,可容易地實現具有負的佩茲法爾和之投影光學系統PU,可以簡單之構造而容易地將圖案Pm之像投影於片材基板FB。 In particular, in this embodiment, by using the concave mirror L13, a projection optical system PU having a negative Pezfal and sum can be easily realized, and an image of the pattern Pm can be easily projected onto the sheet substrate FB.

(第2實施形態) (Second Embodiment)

繼而,參照圖6至圖8對曝光裝置EX之第2實施形態進行說明。 Next, a second embodiment of the exposure apparatus EX will be described with reference to FIGS. 6 to 8.

第2實施形態中,照明光學系統IU及投影光學系統PU之構成與上述第1實施形態不同。因此,以下對照明光學系統IU及投影光學系統PU進行說明。 In the second embodiment, the configurations of the illumination optical system IU and the projection optical system PU are different from those of the first embodiment. Therefore, the illumination optical system IU and the projection optical system PU will be described below.

再者,該等圖中,對於與圖1至圖5所示之第1實施形態之構成要素 相同之要素標附相同之符號,省略或簡化其說明。 In these drawings, the same components as those in the first embodiment shown in FIGS. 1 to 5 are denoted by the same reference numerals, and descriptions thereof are omitted or simplified.

本實施形態中之照明光學系統IU如圖6所示,具備光源部20、沿曝光光EL之光路依序配置之分光鏡BS、光學元件L25、L24、孔徑光闌AS及光學元件L23、L22、L21。該等分光鏡BS、光學元件L25、L24、孔徑光闌AS、光學元件L23、L22、L21如下所述般,構成投影光學系統PU之一部分。 As shown in FIG. 6, the illumination optical system IU in this embodiment includes a light source section 20, a beam splitter BS sequentially arranged along the optical path of the exposure light EL, optical elements L25 and L24, an aperture stop AS, and optical elements L23 and L22. , L21. The beam splitters BS, optical elements L25, L24, aperture stop AS, and optical elements L23, L22, and L21 constitute a part of the projection optical system PU as described below.

投影光學系統PU具備沿曝光光EL之光路依序配置之上述之光學元件(第1部分光學系統)L21、光學元件L22~L23、孔徑光闌AS、光學元件L24、L25、分光鏡BS、凹面鏡L26、平面反射鏡M21、光學元件L27~L29及光學元件(第2部分光學系統)L30。凹面鏡L26係配置於投影光學系統PU中之瞳面之位置。 The projection optical system PU includes the above-mentioned optical elements (part 1 optical system) L21, optical elements L22 to L23, aperture stop AS, optical elements L24, L25, beam splitter BS, and concave mirror arranged sequentially along the optical path of the exposure light EL. L26, plane mirror M21, optical elements L27 to L29, and optical element (part 2 optical system) L30. The concave mirror L26 is disposed on the pupil surface of the projection optical system PU.

來自光源部20之曝光光EL於作為照明光學系統IU之分光鏡BS入射並反射後,經由光學元件L25、L24、孔徑光闌AS、光學元件L23、L22、L21,照明形成於光罩M之部分球面Ma之圖案Pm。 After the exposure light EL from the light source unit 20 is incident and reflected by the beam splitter BS as the illumination optical system IU, the illumination is formed on the mask M through the optical elements L25, L24, the aperture stop AS, and the optical elements L23, L22, and L21. The pattern Pm of a part of the spherical Ma.

於光罩M(部分球面Ma)反射之曝光光EL經由作為投影光學系統PU之光學元件L21~L23、孔徑光闌AS、光學元件L24、L25而入射至分光鏡BS。 The exposure light EL reflected by the mask M (partial spherical surface Ma) enters the beam splitter BS through the optical elements L21 to L23, the aperture stop AS, and the optical elements L24 and L25 as the projection optical system PU.

入射至分光鏡BS之曝光光EL透過分光鏡BS後,於凹面鏡L26反射而再次依序透過分光鏡BS、光學元件L25、L24後,於平面反射鏡M21反射。 After the exposure light EL incident on the beam splitter BS passes through the beam splitter BS, it is reflected by the concave mirror L26, passes through the beam splitter BS, the optical elements L25, and L24 in sequence and is reflected by the plane mirror M21.

於平面反射鏡M21反射之曝光光EL依序透過光學元件L27~L30,而將光罩M之圖案Pm之像投影於片材基板FB。 The exposure light EL reflected by the plane mirror M21 sequentially passes through the optical elements L27 to L30, and the image of the pattern Pm of the mask M is projected on the sheet substrate FB.

圖7中表示本實施形態中之投影光學系統PU之諸要素之值。 FIG. 7 shows the values of the elements of the projection optical system PU in this embodiment.

圖7中,於左端表示曝光光EL於上述光學元件L21~L23、孔徑光闌 AS、光學元件L24、L25、分光鏡BS、凹面鏡L26、光學元件L27~L30依序入射或出射之各光學面之面編號。 In FIG. 7, the left side shows the optical surfaces where the exposure light EL enters or exits sequentially from the above-mentioned optical elements L21 to L23, aperture stop AS, optical elements L24, L25, beam splitter BS, concave mirror L26, and optical elements L27 to L30. Face number.

又,r表示各光學面之曲率半徑,d表示各光學面間之面間隔。而且,r之列中表示各光學面之近軸曲率半徑,d之列中表示各面間隔。 In addition, r represents a curvature radius of each optical surface, and d represents a surface interval between the optical surfaces. In addition, a column of r indicates a paraxial curvature radius of each optical surface, and a column of d indicates an interval between the surfaces.

圖8中表示形成為非球面之每個面編號之非球面資料。 FIG. 8 shows aspherical data of each surface number formed as an aspheric surface.

圖8中、K表示圓錐係數,A~F表示4次、6次、8次、…之非球面係數。 In FIG. 8, K represents a conic coefficient, and A to F represent aspheric coefficients of 4th, 6th, 8th, ....

再者,圖7及圖8中,近軸曲率半徑r之符號係將朝向物體面側(圖案Pm面側)凸出之情形設為正,面間隔d設為以光學面之前後而將符號反轉者。 In FIGS. 7 and 8, the sign of the paraxial curvature radius r is set to be positive when it protrudes toward the object surface side (pattern Pm surface side), and the surface interval d is set in front of and behind the optical surface. Reverser.

投影光學系統PU係例如波長(曝光波長)為365nm,投影倍率為2倍(擴大),物體側之數值孔徑NA為0.054。藉由上述之光學元件L21~L23、孔徑光闌AS、光學元件L24、L25、分光鏡BS、凹面鏡L26、光學元件L27~L30而設定之佩茲法爾和之大小為-0.00200(-1/500)。 The projection optical system PU system has, for example, a wavelength (exposure wavelength) of 365 nm, a projection magnification of 2 (expanded), and a numerical aperture NA on the object side of 0.054. The size of the Pezfal sum set by the above-mentioned optical elements L21 to L23, aperture stop AS, optical elements L24, L25, beam splitter BS, concave mirror L26, and optical elements L27 to L30 is -0.00200 (-1 / 500).

因此,本實施形態中,亦藉由使用於形成球面之一部分之部分球面形成有圖案Pm之光罩M,且使用具有負的佩茲法爾和之投影光學系統PU,而可防止構造之複雜化,並且可以良好之光學性能自部分球面Ma投影於平面(片材基板FB之被處理面Fp)。 Therefore, in this embodiment, a mask M having a pattern Pm formed on a part of the spherical surface forming a spherical surface is used, and a projection optical system PU having a negative Pezfal sum is used to prevent the complexity of the structure. And can project good optical performance from a part of the spherical surface Ma to a plane (the processed surface Fp of the sheet substrate FB).

進而,根據本實施形態,於照明光學系統IU與投影光學系統PU之間共用光學元件,因此可實現裝置之小型化。 Furthermore, according to this embodiment, since the optical element is shared between the illumination optical system IU and the projection optical system PU, the device can be miniaturized.

(第3實施形態) (Third Embodiment)

繼而,參照圖9至圖11對曝光裝置EX之第3實施形態進行說明。 Next, a third embodiment of the exposure apparatus EX will be described with reference to FIGS. 9 to 11.

第3實施形態中,照明光學系統IU及投影光學系統PU之構成與上述第1實施形態不同。因此,以下對照明光學系統IU及投影光學系統PU進行說明。 In the third embodiment, the configurations of the illumination optical system IU and the projection optical system PU are different from those of the first embodiment. Therefore, the illumination optical system IU and the projection optical system PU will be described below.

再者,該等圖中,對於與圖1至圖5所示之第1實施形態之構成要素相同之要素標附相同符號,省略或簡化其說明。 In these drawings, the same elements as those in the first embodiment shown in FIG. 1 to FIG. 5 are denoted by the same symbols, and descriptions thereof are omitted or simplified.

本實施形態中之照明光學系統IU如圖9所示,具備沿曝光光EL之光路依序配置之凸面鏡L34、光學元件L33、L32、凹面鏡L31、平面反射鏡M31。該等凸面鏡L34、光學元件L33、L32、凹面鏡L31、平面反射鏡M31如下所述般構成投影光學系統PU之一部分。 As shown in FIG. 9, the illumination optical system IU in this embodiment includes a convex mirror L34, optical elements L33, L32, a concave mirror L31, and a flat mirror M31 which are sequentially arranged along the optical path of the exposure light EL. The convex mirror L34, the optical elements L33, L32, the concave mirror L31, and the flat mirror M31 constitute a part of the projection optical system PU as described below.

凸面鏡L34具有半透過性,使自與對向於光學元件L33之面為相反側之面入射之曝光光EL朝向光學元件L33出射。 The convex mirror L34 is semi-transmissive, and causes the exposure light EL incident from the surface opposite to the surface facing the optical element L33 to be emitted toward the optical element L33.

入射至光學元件L33之曝光光EL透過光學元件L33、L32後,於凹面鏡31及平面反射鏡M31反射,朝向光罩M之中心軸線J行進,照明形成於光罩M之部分球面Ma之圖案Pm。 After the exposure light EL incident on the optical element L33 passes through the optical elements L33 and L32, it is reflected by the concave mirror 31 and the plane mirror M31, and travels toward the center axis J of the mask M, and illuminates the pattern Pm formed on a part of the spherical surface Ma of the mask M .

投影光學系統PU除具備沿曝光光EL之光路依序配置之上述之平面反射鏡(第1部分光學系統)M31、凹面鏡L31、光學元件L32、L33、凸面鏡L34以外,亦具備凹面鏡L35、平面反射鏡M32、孔徑光闌AS、光學元件(第2部分光學系統)L36。 The projection optical system PU includes the above-mentioned plane mirror (part 1 optical system) M31, concave mirror L31, optical elements L32, L33, and convex mirror L34, which are sequentially arranged along the optical path of the exposure light EL, and also includes a concave mirror L35 and a plane reflection Mirror M32, aperture stop AS, optical element (second optical system) L36.

凹面鏡L31、L35配置於投影光學系統PU中之瞳面之位置。凹面鏡L35配置於孔徑光闌AS之附近。 The concave mirrors L31 and L35 are arranged on the pupil surface of the projection optical system PU. The concave mirror L35 is arranged near the aperture stop AS.

於光罩M(部分球面Ma)反射之曝光光EL於作為投影光學系統PU之平面反射鏡M31、凹面鏡L31反射後,依序透過光學元件L32、L33而於凸面鏡L34反射。 After the exposure light EL reflected from the mask M (partial spherical Ma) is reflected by the plane mirror M31 and the concave mirror L31 as the projection optical system PU, it sequentially passes through the optical elements L32 and L33 and is reflected by the convex mirror L34.

於凸面鏡L34反射之曝光光EL再次依序透過光學元件L33、L32後,於凹面鏡L35及平面反射鏡M32反射。 After the exposure light EL reflected by the convex mirror L34 passes through the optical elements L33 and L32 in sequence, it is reflected by the concave mirror L35 and the plane mirror M32.

於平面反射鏡M32反射之曝光光EL透過光學元件L36,而將光罩M之圖案Pm之像投影於片材基板FB。 The exposure light EL reflected by the plane mirror M32 passes through the optical element L36, and the image of the pattern Pm of the mask M is projected on the sheet substrate FB.

圖10中表示本實施形態中之投影光學系統PU之諸要素之 值。 Fig. 10 shows the values of the elements of the projection optical system PU in this embodiment.

圖10中,於左端表示曝光光EL於上述凹面鏡L31、光學元件L32、L33、凸面鏡L34、凹面鏡L35、孔徑光闌AS、光學元件L36依序入射或出射之各光學面之面編號。 In FIG. 10, at the left end, the surface numbers of the optical surfaces in which the exposure light EL enters or exits from the concave mirror L31, the optical elements L32, L33, the convex mirror L34, the concave mirror L35, the aperture stop AS, and the optical element L36 in sequence are shown at the left end.

又,r表示各光學面之曲率半徑,d表示各光學面間之面間隔。而且,r之列中表示各光學面之近軸曲率半徑,d之列中表示各面間隔。 In addition, r represents a curvature radius of each optical surface, and d represents a surface interval between the optical surfaces. In addition, a column of r indicates a paraxial curvature radius of each optical surface, and a column of d indicates an interval between the surfaces.

圖11中表示形成為非球面之每個面編號之非球面資料。 FIG. 11 shows aspherical data of each surface number formed as an aspheric surface.

圖11中,K表示圓錐係數,A~F表示4次、6次、8次、…之非球面係數。 In FIG. 11, K represents a conic coefficient, and A to F represent aspheric coefficients of 4th, 6th, 8th, ....

再者,圖10及圖11中,近軸曲率半徑r之符號係將朝向物體面側(圖案Pm面側)凸出之情形設為正,面間隔d設為以光學面之前後而將符號反轉者。 In addition, in FIG. 10 and FIG. 11, the sign of the paraxial curvature radius r is set to be positive when it protrudes toward the object surface side (pattern Pm surface side), and the surface interval d is set to the symbol before and after the optical surface. Reverser.

投影光學系統PU係例如波長(曝光波長)為365nm,投影倍率為1.25倍(擴大),物體側之數值孔徑NA為0.055,藉由上述之凹面鏡L31、光學元件L32、L33、凸面鏡L34、凹面鏡L35、孔徑光闌AS、光學元件L36而設定之佩茲法爾和之大小為-0.00175(≒-1/560)。 The projection optical system PU system has, for example, a wavelength (exposure wavelength) of 365 nm, a projection magnification of 1.25 times (expanded), and a numerical aperture NA on the object side of 0.055. With the above-mentioned concave mirror L31, optical elements L32, L33, convex mirror L34, and concave mirror L35 , The aperture stop AS, and the Pezfal sum set by the optical element L36 are -0.00175 (≒ -1 / 560).

因此,本實施形態中,亦藉由使用於形成球面之一部分之部分球面形成有圖案Pm之光罩M,且使用具有負的佩茲法爾和之投影光學系統PU,而可防止構造之複雜化,並且可以良好之光學性能自部分球面Ma投影於平面(片材基板FB之被處理面Fp)。 Therefore, in this embodiment, a mask M having a pattern Pm formed on a part of the spherical surface forming a spherical surface is used, and a projection optical system PU having a negative Pezfal sum is used to prevent the complexity of the structure. And can project good optical performance from a part of the spherical surface Ma to a plane (the processed surface Fp of the sheet substrate FB).

(第4實施形態) (Fourth Embodiment)

繼而,參照圖12對曝光裝置EX之第4實施形態進行說明。 Next, a fourth embodiment of the exposure apparatus EX will be described with reference to FIG. 12.

第4實施形態中之曝光裝置EX中,成為如下構成:設置以使軸線相互平行之方式配置有複數個上述之光罩M而成之光罩單元,對應於各光罩而設置投影光學系統。 The exposure apparatus EX in the fourth embodiment has a configuration in which a mask unit in which a plurality of the above-mentioned masks M are arranged so that axes are parallel to each other is provided, and a projection optical system is provided corresponding to each mask.

再者,該等圖中,對於與圖1至圖5所示之第1實施形態之構成要素相同之要素標附相同之符號,省略或簡化其說明。 In these drawings, the same components as those in the first embodiment shown in FIG. 1 to FIG. 5 are denoted by the same symbols, and descriptions thereof are omitted or simplified.

如圖12所示,本實施形態中之曝光裝置EX具備設置有分別具有上述之部分球面Ma之複數個(此處為3個)光罩M1~M3的光罩單元MU。光罩M1~M3於Y方向隔開間隔而配置。 As shown in FIG. 12, the exposure apparatus EX in this embodiment includes a photomask unit MU provided with a plurality of (here, three) photomasks M1 to M3 each having the partial spherical surface Ma described above. The photomasks M1 to M3 are arranged at intervals in the Y direction.

各光罩M1~M3之中心軸線J於Y軸方向延伸,且相互平行地配置。本實施形態中,光罩M1~M3具備共用旋轉軸MJ',該共用旋轉軸MJ'係於Y軸方向延伸且與部分球面Ma一同將共用軸線作為軸中心,且可圍繞該共用軸線而旋轉。各光罩M1~M3之中心軸線J係以與共用旋轉軸MJ'之共用軸線為同軸之方式配置。 The center axes J of the photomasks M1 to M3 extend in the Y-axis direction and are arranged in parallel with each other. In this embodiment, the masks M1 to M3 are provided with a common rotation axis MJ ', which extends in the Y-axis direction and has a common axis as an axis center together with a part of the spherical surface Ma, and can be rotated around the common axis. . The central axis J of each of the photomasks M1 to M3 is arranged so as to be coaxial with the common axis of the common rotation axis MJ ′.

設置有如下投影光學系統PU1~PU3:具有與對應於各光罩M1~M3之各者而將各光罩M1~M3之圖案Pm1~Pm3之像投影於片材基板FB的上述實施形態中之投影光學系統PU同樣之構成,且具有與各光罩M1~M3之部分球面Ma之曲率半徑對應之大小之負的佩茲法爾和。 The following projection optical systems PU1 to PU3 are provided, each of which has an image corresponding to each of the masks M1 to M3 and projects the images of the patterns Pm1 to Pm3 of each of the masks M1 to M3 on the sheet substrate FB. The projection optical system PU has the same configuration, and has a negative Pezfal sum of a magnitude corresponding to the curvature radius of a part of the spherical surface Ma of each of the masks M1 to M3.

各投影光學系統PU1~PU3根據投影倍率而分別投影於片材基板FB上之投影區域PA1~PA3沿Y方向鄰接配置。再者,所謂鄰接配置,係不僅包含相鄰之投影區域之端緣彼此接觸之構成,亦包含相鄰之投影區域之端緣彼此之一部分相互重疊之概念。 The projection areas PA1 to PU3 of the projection optical systems PU1 to PU3 that are respectively projected on the sheet substrate FB according to the projection magnification are arranged adjacent to each other in the Y direction. In addition, the so-called adjacent arrangement includes not only a configuration in which the edges of adjacent projection areas are in contact with each other, but also a concept in which the edges of adjacent projection areas overlap each other.

上述構成之曝光裝置EX中,光罩M1~M3之部分球面Ma對應於共用旋轉軸MJ'之旋轉而一體地旋轉,由曝光光EL照明之光罩M1~M3之圖案Pm1~Pm3之像經由投影光學系統PU1~PU3而分別投影於投影區域PA1~PA3。 In the exposure device EX configured as described above, part of the spherical surface Ma of the masks M1 to M3 rotates integrally in accordance with the rotation of the common rotation axis MJ ', and the images of the patterns Pm1 to Pm3 of the masks M1 to M3 illuminated by the exposure light EL pass through The projection optical systems PU1 to PU3 are respectively projected onto the projection areas PA1 to PA3.

此時,於例如形成於光罩M1~M3之圖案Pm1~Pm3相同之情形時,於片材基板FB形成複數個相同之圖案,從而可製造複數個。 At this time, when, for example, the patterns Pm1 to Pm3 formed on the photomasks M1 to M3 are the same, a plurality of the same patterns are formed on the sheet substrate FB, so that a plurality of patterns can be manufactured.

另一方面,於例如形成於光罩M1~M3之圖案Pm1~Pm3經合成而形 成一個圖案之情形時,可於片材基板FB形成大型且大面積之圖案。 On the other hand, in the case where the patterns Pm1 to Pm3 formed on the photomasks M1 to M3 are synthesized to form a single pattern, a large-scale and large-area pattern can be formed on the sheet substrate FB.

再者,上述實施形態中之光罩單元MU中,藉由共用軸部MJ'而將3個光罩M1~M3以同軸設置,又,投影光學系統PU1~PU3亦成為沿Y方向配置之構成。 Furthermore, in the mask unit MU in the above embodiment, the three masks M1 to M3 are coaxially arranged by using the common shaft portion MJ ′, and the projection optical systems PU1 to PU3 are also arranged in the Y direction. .

另一方面,於例如因空間之制約而不易將3個投影光學系統PU1~PU3沿共用軸線配置之情形時,亦可成為使光罩M2及投影光學系統PU2相對於光罩M1、M3及投影光學系統PU1、PU3而於X方向上相隔之所謂鋸齒狀配置之構成。 On the other hand, when it is difficult to arrange the three projection optical systems PU1 to PU3 along the common axis due to space constraints, for example, the mask M2 and the projection optical system PU2 may be made relative to the masks M1, M3, and projection. The optical systems PU1 and PU3 are arranged in a so-called zigzag configuration spaced apart in the X direction.

又,上述實施形態中所示之光罩單元MU所具備之光罩M1~M3之數量及投影光學系統PU之數量為一例,亦可為具備2個光罩之構成或具備4個以上之光罩之構成。 In addition, the number of the masks M1 to M3 and the number of the projection optical system PU included in the mask unit MU shown in the above-mentioned embodiment are examples, and it may be a configuration with two masks or four or more lights. The structure of the hood.

於此情形時,於例如因空間之制約而不易將複數個投影光學系統沿共用軸線配置之情形時,關於於與搬送方向正交之方向(Y方向)相鄰之光罩及投影光學系統,亦可成為於搬送方向(X方向)相隔之鋸齒狀配置之構成。 In this case, for example, when it is difficult to arrange a plurality of projection optical systems along a common axis due to space constraints, regarding a mask and a projection optical system adjacent to a direction (Y direction) orthogonal to the conveying direction, It is also possible to have a configuration having a zigzag arrangement spaced from the conveyance direction (X direction).

以上,一面參照隨附圖式一面對本發明之較佳實施形態進行了說明,但本發明並不限定於該例。上述例中所例示之各構成構件之各形狀或組合等為一例,可於不脫離本發明之主旨之範圍內,基於設計要求等進行各種變更。 The preferred embodiment of the present invention has been described above with reference to the accompanying drawings, but the present invention is not limited to this example. Each shape or combination of the constituent members illustrated in the above examples is an example, and various changes can be made based on design requirements and the like without departing from the spirit of the present invention.

上述實施形態之曝光裝置係藉由將包含本案申請專利範圍中所列舉之各構成要素之各種子系統以保持特定之機械精度、電氣精度、光學精度之方式進行組裝而製造。 The exposure apparatus of the above-mentioned embodiment is manufactured by assembling various subsystems including each constituent element listed in the scope of the patent application for the present application in such a manner as to maintain specific mechanical accuracy, electrical accuracy, and optical accuracy.

為了確保該等各種精度,於該組裝之前後,對各種光學系統進行用以達成光學精度之調整,對各種機械系統進行用以達成機械精度之調整,對各種電氣系統進行用以達成電氣精度之調整。 In order to ensure these various precisions, before and after the assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are used to achieve electrical accuracy. Adjustment.

自各種子系統向曝光裝置之組裝步驟包含各種子系統相互之機械連接、電氣電路之配線連接、氣壓電路之配管連接等。於自該各種子系統向曝光裝置之組裝步驟前,具有各子系統各自之組裝步驟。 The assembly steps from various subsystems to the exposure device include the mechanical connections of various subsystems, wiring connections of electrical circuits, and piping connections of pneumatic circuits. Before the assembling steps from the various subsystems to the exposure device, there are respective assembling steps of each subsystem.

若各種子系統向曝光裝置之組裝步驟結束,則進行綜合調整,確保作為曝光裝置整體之各種精度。再者,曝光裝置之製造可於溫度及潔淨度等得到管理之無塵室進行。 After the assembly steps of the various subsystems to the exposure device are completed, comprehensive adjustment is performed to ensure various accuracy as a whole of the exposure device. Furthermore, the manufacturing of the exposure device can be performed in a clean room in which temperature and cleanliness are managed.

半導體元件等微元件如圖13所示般經由如下步驟而製造:步驟201,進行微元件之功能及性能設計;步驟202,製作基於該設計步驟之光罩(reticle);步驟203,製造作為元件之基材之基板(長條之片狀撓性基板);包含基板處理(曝光處理)之基板處理步驟204,該基板處理(曝光處理)包括根據上述實施形態,使用光罩之圖案,以曝光光對基板進行曝光,及使經曝光之基板(感光劑)顯影;元件組裝步驟(包含切割步驟、接合步驟、封裝步驟等加工製程)205;及檢查步驟206等。 Microelements such as semiconductor elements are manufactured as shown in FIG. 13 through the following steps: step 201, designing the function and performance of the microelement; step 202, making a reticle based on the design step; step 203, producing as the element Substrate (long sheet-shaped flexible substrate); substrate processing step 204 including substrate processing (exposure processing), the substrate processing (exposure processing) includes using a pattern of a photomask to expose according to the above embodiment; The substrate is exposed by light, and the exposed substrate (photosensitizer) is developed; the component assembling step (including the cutting process, the bonding step, the packaging step and other processing processes) 205; and the inspection step 206 and the like.

再者,步驟204中,包含如下者:藉由使感光劑顯影,形成與光罩之圖案對應之曝光圖案層(經顯影之感光劑層),經由該曝光圖案層而對基板進行加工。 Furthermore, step 204 includes the following: developing the photosensitizer to form an exposure pattern layer (developed photosensitizer layer) corresponding to the pattern of the photomask, and processing the substrate through the exposure pattern layer.

又,近年來,作為生態製程,較理想為無需感光劑之顯影之加成製程。 In addition, in recent years, as an ecological manufacturing process, an additive manufacturing process that does not require a photosensitizer is more desirable.

於此情形時,基板處理步驟204係由如下步驟等而構成:將自藉由紫外線之曝光光之照射而顯示較高之撥液性之狀態變化為顯示親液性之狀態之感光性SAM(Self-Assembled Monolayer,自組裝單分子層)劑塗佈於基板之表面;根據上述實施形態,使用光罩M之圖案Pm,以曝光光對塗佈有感光性SAM劑之基板進行曝光;藉由該曝光而於基板上對親液性提高之部分利用印刷方式或噴墨方式等選擇性地塗佈配線用之導電性墨水或膏、或者TFT用之半導體材料之溶液等。 In this case, the substrate processing step 204 is constituted by a step of changing the state of showing a high liquid repellency from the irradiation of ultraviolet light to light-sensitive SAM ( Self-Assembled Monolayer agent is coated on the surface of the substrate; according to the above embodiment, the pattern Pm of the photomask M is used to expose the substrate coated with the photosensitive SAM agent with exposure light; This exposure selectively coats conductive ink or paste for wiring, or a solution of a semiconductor material for TFT on a portion of the substrate on which the lyophilic property is improved by a printing method or an inkjet method.

進而,亦周知有如於受到曝光光之照射之部分表現鍍敷還原能之材料。於使用此種材料之情形時,藉由將經曝光之基板直接浸漬於無電解鍍敷液(含有鈀等之離子),可形成配線用之金屬層。 Furthermore, a material which exhibits reduction energy of plating, such as a portion irradiated by exposure light, is also known. When using such a material, a metal layer for wiring can be formed by directly immersing the exposed substrate in an electroless plating solution (containing ions such as palladium).

另外,於製作圖13中之光罩之步驟202中,可使用之前之各實施形態中所說明之投影光學系統PU,將作為母板之平面光罩之圖案容易地轉印於作為光罩M之具有球面狀外周面之圓筒體上。此處,使用圖14對使用之前之圖6所示之曝光裝置之投影光學系統PU製作球面狀之圓筒光罩M之一例進行說明。 In addition, in the step 202 of making the mask in FIG. 13, the projection optical system PU described in the previous embodiments can be used to easily transfer the pattern of the planar mask as the mother board to the mask M. On a cylindrical body with a spherical outer peripheral surface. Here, an example in which a spherical cylindrical mask M is produced using the projection optical system PU of the exposure apparatus shown in FIG. 6 before using FIG. 14 will be described.

圖14所示之投影光學系統PU係使圖6所示之投影光學系統PU之物面與像面之關係相反者,於圖6中作為被曝光對象之基板FB所處之像面側,配置作為母板之平面光罩RT,於圖6中光罩M所處之物面側,配置作為光罩M之具有球狀表面之圓筒體M'。 The projection optical system PU shown in FIG. 14 is the reverse of the relationship between the object plane and the image plane of the projection optical system PU shown in FIG. 6, and is arranged on the image plane side of the substrate FB as the object to be exposed in FIG. 6. As the planar mask RT as the mother board, a cylindrical body M ′ having a spherical surface as the mask M is disposed on the object surface side where the mask M is located in FIG. 6.

於該圓筒體M'之球狀之外周面均勻地塗佈光阻劑,藉由自平面光罩RT經由投影光學系統PU而投影之圖案Pm'進行曝光。本實施形態中,圖案Pm'之最佳聚焦面(圖案像面)係沿圓筒體M'之球狀之外周面向圖14中之Y軸與Z軸之兩個方向之各者彎曲者。 A photoresist is uniformly applied to the spherical outer peripheral surface of the cylindrical body M ′, and exposure is performed by a pattern Pm ′ projected from the planar mask RT through the projection optical system PU. In this embodiment, the optimal focusing surface (pattern image plane) of the pattern Pm ′ is a curve along the spherical outer periphery of the cylindrical body M ′ in each of the two directions of the Y axis and the Z axis in FIG. 14.

圖14中,至少於X方向一維地移動之平台RST係以使光罩RT之圖案面Mp與XY面平行之方式支撐光罩RT。於光罩RT之上方設置有照明光學系統ILU,該照明光學系統ILU係朝向圖案面Mp照射於Y軸方向延伸之狹縫狀(或長方形狀)之照明光IB。 In FIG. 14, the stage RST that moves one-dimensionally at least in the X direction supports the mask RT such that the pattern surface Mp of the mask RT is parallel to the XY plane. An illumination optical system ILU is provided above the photomask RT. The illumination optical system ILU radiates a slit-shaped (or rectangular) illumination light IB extending in the Y-axis direction toward the pattern surface Mp.

如此,本實施形態中,藉由將圖6中所說明之投影光學系統PU直接使用或稍許變更而使用,可自平面之光罩RT製作球面狀之圓筒光罩M。 As described above, in this embodiment, a spherical cylindrical mask M can be produced from a planar mask RT by using the projection optical system PU described in FIG. 6 as it is or using it with a slight modification.

圖14中,說明了使用圖6之投影光學系統PU之例,使用其他圖2、圖9所示之投影光學系統PU亦可同樣地自平面之光罩RT製作球面狀之圓筒 光罩M。 FIG. 14 illustrates an example in which the projection optical system PU shown in FIG. 6 is used. A spherical cylindrical mask M can be similarly manufactured from a flat mask RT using other projection optical systems PU shown in FIGS. 2 and 9. .

Claims (10)

一種曝光裝置,係將形成於繞既定軸線旋轉之旋轉光罩之外周面的圖案,曝光於在長邊方向以既定速度移動之基板上,其具備:支承裝置,以前述旋轉光罩之複數個在各自之前述軸線與共用軸線同軸之狀態下於前述軸線之方向相隔既定間隔配置的方式,將設於前述旋轉光罩之軸部旋轉自如地支承;複數個投影光學系統,與前述複數個旋轉光罩之各個對應地在前述軸線之方向分離配置,將前述複數個旋轉光罩各自之前述圖案之像投影於前述基板;以及複數個照明光學系統,與前述複數個投影光學系統之各個對應設置,以照明光照明前述旋轉光罩之外周面;前述複數個旋轉光罩各自之外周面,構成於前述軸線上設定有中心點之球面的一部分,且形成為繞前述軸線帶狀地形成而設有前述圖案之部分球面,前述複數個投影光學系統之各個,具有與形成於前述旋轉光罩之外周面之前述部分球面之曲率半徑相對應之大小之負的佩茲法爾和。An exposure device that exposes a pattern formed on the outer peripheral surface of a rotating photomask that rotates around a predetermined axis and exposes it to a substrate that moves at a predetermined speed in the longitudinal direction. The exposure device includes a support device that uses a plurality of the aforementioned rotating photomasks. In a manner in which the aforementioned axes are coaxial with the common axis and arranged at predetermined intervals in the direction of the aforementioned axis, the shaft portion provided in the aforementioned rotating reticle is rotatably supported; a plurality of projection optical systems are rotated with the aforementioned plurality of rotations Each of the photomasks is separately arranged correspondingly in the direction of the aforementioned axis, and the images of the respective patterns of the plurality of rotating photomasks are projected on the substrate; and a plurality of illumination optical systems are provided correspondingly to the respective projection optical systems. , The outer peripheral surface of the rotating mask is illuminated with illumination light; each of the outer peripheral surfaces of the plurality of rotating masks constitutes a part of a spherical surface with a center point set on the axis, and is formed to be formed in a band shape around the axis A part of the sphere having the aforementioned pattern, and each of the aforementioned plurality of projection optical systems has Outside circumferential surface of the rotating mask portion corresponding to a radius of curvature of the spherical surface of the magnitudes of the negative and Peizifaer. 如申請專利範圍第1項之曝光裝置,其中,前述複數個投影光學系統之各個,係將前述旋轉光罩之前述圖案之像以放大或等倍中之任一種倍率投影至前述基板上。For example, the exposure device of the first scope of the application for a patent, wherein each of the plurality of projection optical systems is to project the image of the pattern of the rotary reticle onto the substrate at any magnification or equal magnification. 如申請專利範圍第2項之曝光裝置,其中,前述複數個投影光學系統分別包含:分光鏡,供來自前述照明光學系統之前述照明光射入並使之射向前述旋轉光罩之外周面,且將來自前述旋轉光罩之前述圖案之曝光用光射向前述基板。For example, the exposure device according to item 2 of the patent application, wherein the plurality of projection optical systems each include a beam splitter for the illumination light from the illumination optical system to be incident on the outer peripheral surface of the rotating mask, And the exposure light of the said pattern from the said rotating reticle is irradiated to the said substrate. 如申請專利範圍第2或3項之曝光裝置,其中,前述複數個投影光學系統分別包含至少一個凹面鏡,前述複數個照明光學系統之各個,透過前述凹面鏡之至少一部分將前述照明光射向前述旋轉光罩之外周面。For example, the exposure device according to the second or third aspect of the patent application, wherein the plurality of projection optical systems each include at least one concave mirror, and each of the plurality of illumination optical systems transmits the illumination light to the rotation through at least a part of the concave mirror. The outer surface of the mask. 如申請專利範圍第4項之曝光裝置,其中,前述複數個投影光學系統,分別包含將來自前述旋轉光罩之前述圖案之曝光用光所通過的面作成非球面而成的光學元件。For example, the exposure device according to item 4 of the patent application, wherein the plurality of projection optical systems each include an optical element formed by making an aspherical surface through which the exposure light of the pattern from the rotary mask passes. 一種曝光裝置,係將於繞既定軸線旋轉之旋轉光罩之外周面以反射照明光之材料形成之圖案,曝光於在長邊方向以既定速度移動之可撓性片狀基板上,其具備:支承裝置,以前述旋轉光罩之複數個在各自之前述軸線與共用軸線同軸之狀態或彼此平行之狀態下於前述軸線之方向相隔既定間隔配置的方式,將前述旋轉光罩之與前述軸線同軸之軸部旋轉自如地支承;複數個投影光學系統,與前述複數個旋轉光罩之各個對應地在前述軸線之方向分離配置,供將在前述複數個旋轉光罩各自之前述圖案反射之曝光用光射入並將前述圖案之像投影至前述片狀基板;以及複數個照明光學系統,與前述複數個投影光學系統之各個對應設置,透過構成前述投影光學系統之複數個光學元件或複數個反射鏡之至少一部分以前述照明光照明前述旋轉光罩之外周面;前述複數個旋轉光罩各自之外周面,構成於前述軸線上設定有中心點之球面的一部分,且形成為繞前述軸線帶狀地形成而設有前述圖案之部分球面,前述複數個投影光學系統之各個,具有與形成於前述旋轉光罩之外周面之前述部分球面之曲率半徑相對應之大小之負的佩茲法爾和。An exposure device is a pattern formed by a material that reflects the illumination light on the outer peripheral surface of a rotating mask that rotates around a predetermined axis, and is exposed on a flexible sheet substrate that moves at a predetermined speed in the long side direction. The device includes: The supporting device is coaxially arranged with the aforementioned axis in a manner that a plurality of the aforementioned rotary masks are arranged at predetermined intervals in a direction of the aforementioned axes in a state where the aforementioned axes are coaxial with the common axis or in a state where they are parallel to each other. The shaft portion is rotatably supported; a plurality of projection optical systems are arranged separately from each other in the direction of the axis corresponding to each of the plurality of rotating photomasks, and are used for exposure for reflecting the aforementioned patterns in the plurality of rotating photomasks. Light is incident and the image of the pattern is projected onto the sheet substrate; and a plurality of illumination optical systems are provided corresponding to each of the plurality of projection optical systems, and pass through a plurality of optical elements or a plurality of reflections constituting the projection optical system. At least a part of the mirror illuminates the outer peripheral surface of the rotating reticle with the illumination light; Each of the outer peripheral surfaces of the reticle forms a part of a spherical surface with a center point set on the axis, and is formed as a part of a spherical surface formed in a band shape around the axis and provided with the pattern. Each of the plurality of projection optical systems, A negative Pezfal sum having a magnitude corresponding to the radius of curvature of the aforementioned partial spherical surface formed on the outer peripheral surface of the aforementioned rotating reticle. 如申請專利範圍第6項之曝光裝置,其中,前述複數個投影光學系統之各個,係將前述旋轉光罩之前述圖案之像以放大或等倍中之任一種倍率投影至前述片狀基板上。For example, the exposure device of the sixth scope of the application for a patent, wherein each of the plurality of projection optical systems is to project the image of the pattern of the rotary reticle onto the sheet substrate at any magnification or equal magnification. . 如申請專利範圍第7項之曝光裝置,其中,前述複數個投影光學系統分別包含至少一個凹面鏡,前述複數個照明光學系統之各個,透過前述凹面鏡之至少一部分將前述照明光射向前述旋轉光罩之外周面。For example, the exposure device of the seventh scope of the patent application, wherein the plurality of projection optical systems each include at least one concave mirror, and each of the plurality of illumination optical systems transmits the illumination light to the rotating photomask through at least a part of the concave mirror. Outside perimeter. 如申請專利範圍第7項之曝光裝置,其中,前述複數個投影光學系統分別包含:分光鏡,供來自前述照明光學系統之前述照明光射入並使之射向前述旋轉光罩之外周面,且將在前述旋轉光罩之前述圖案反射之曝光用光射向前述片狀基板。For example, the exposure device according to item 7 of the patent application, wherein the plurality of projection optical systems each include a beam splitter for the illumination light from the illumination optical system to be incident on the outer peripheral surface of the rotating mask, The exposure light reflected on the pattern of the rotating photomask is directed toward the sheet substrate. 如申請專利範圍第6至9項中任一項之曝光裝置,其中,前述複數個投影光學系統,分別包含將來自前述旋轉光罩之前述圖案之曝光用光所通過的面作成非球面而成的光學元件。For example, the exposure device according to any one of claims 6 to 9, wherein the plurality of projection optical systems each include an aspheric surface formed by passing a surface through which the exposure light from the pattern from the rotating mask passes. Optical components.
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