TWI653314B - 使用複合材料的發光裝置、複合材料的製造方法及光學膜 - Google Patents

使用複合材料的發光裝置、複合材料的製造方法及光學膜 Download PDF

Info

Publication number
TWI653314B
TWI653314B TW107112763A TW107112763A TWI653314B TW I653314 B TWI653314 B TW I653314B TW 107112763 A TW107112763 A TW 107112763A TW 107112763 A TW107112763 A TW 107112763A TW I653314 B TWI653314 B TW I653314B
Authority
TW
Taiwan
Prior art keywords
composite material
quantum dots
light
color
projector
Prior art date
Application number
TW107112763A
Other languages
English (en)
Chinese (zh)
Other versions
TW201903120A (zh
Inventor
周必泰
周尚威
Original Assignee
優美特創新材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 優美特創新材料股份有限公司 filed Critical 優美特創新材料股份有限公司
Publication of TW201903120A publication Critical patent/TW201903120A/zh
Application granted granted Critical
Publication of TWI653314B publication Critical patent/TWI653314B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/08—Controlling the distribution of the light emitted by adjustment of elements by movement of the screens or filters
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/007—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light
    • G02B26/008—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light in the form of devices for effecting sequential colour changes, e.g. colour wheels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B33/00—Colour photography, other than mere exposure or projection of a colour film
    • G03B33/08—Sequential recording or projection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S10/00—Lighting devices or systems producing a varying lighting effect
    • F21S10/007—Lighting devices or systems producing a varying lighting effect using rotating transparent or colored disks, e.g. gobo wheels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/81—Of specified metal or metal alloy composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/811—Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx
    • Y10S977/812—Perovskites and superconducting composition, e.g. BaxSr1-xTiO3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/814—Group IV based elements and compounds, e.g. CxSiyGez, porous silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/816—III-N based compounds, e.g. AlxGayInzN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/819—III-As based compounds, e.g. AlxGayInzAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/82—III-Sb based compounds, e.g. AlxGayInzSb
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/823—Tl-containing or Bi-containing compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Astronomy & Astrophysics (AREA)
  • Multimedia (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
  • Optical Filters (AREA)
  • Led Device Packages (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Projection Apparatus (AREA)
TW107112763A 2017-04-18 2018-04-13 使用複合材料的發光裝置、複合材料的製造方法及光學膜 TWI653314B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/490,766 2017-04-18
US15/490,766 US10345688B2 (en) 2017-04-18 2017-04-18 Light emitting apparatus using composite material

Publications (2)

Publication Number Publication Date
TW201903120A TW201903120A (zh) 2019-01-16
TWI653314B true TWI653314B (zh) 2019-03-11

Family

ID=63790542

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107112763A TWI653314B (zh) 2017-04-18 2018-04-13 使用複合材料的發光裝置、複合材料的製造方法及光學膜

Country Status (4)

Country Link
US (3) US10345688B2 (https=)
JP (1) JP2018178116A (https=)
CN (1) CN108732741A (https=)
TW (1) TWI653314B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10883045B2 (en) * 2016-05-02 2021-01-05 Current Lighting Solutions, Llc Phosphor materials including fluidization materials for light sources
US10345688B2 (en) * 2017-04-18 2019-07-09 Unique Materials Co., Ltd. Light emitting apparatus using composite material
WO2019035307A1 (ja) * 2017-08-17 2019-02-21 ソニー株式会社 光源装置および投射型表示装置
CN107656399A (zh) * 2017-11-01 2018-02-02 惠州市华星光电技术有限公司 液晶显示器
CN109343271A (zh) * 2018-11-13 2019-02-15 惠州市华星光电技术有限公司 背光模组及液晶显示器
US20220235266A1 (en) * 2019-05-23 2022-07-28 Sony Group Corporation Light emitting element with emissive semiconductor nanocrystal materials and projector light source based on these materials
WO2020233859A1 (en) * 2019-05-23 2020-11-26 Sony Corporation Nanocrystal emissive materials, light emitting element, and projector light source based on these materials
US20200373279A1 (en) * 2019-05-24 2020-11-26 Applied Materials, Inc. Color Conversion Layers for Light-Emitting Devices
KR102737505B1 (ko) * 2019-06-03 2024-12-05 삼성전자주식회사 발광장치, 백라이트 유닛 및 디스플레이 장치
CN110776918A (zh) * 2019-11-27 2020-02-11 重庆医科大学 一种新型荧光纳米量子点及其制备方法
US11655964B2 (en) 2020-07-14 2023-05-23 Sony Group Corporation Film, illumination device, projector color wheel and method of manufacturing a film
US11740451B2 (en) * 2020-07-14 2023-08-29 Sony Group Corporation Projector color wheel and projector illumination device
TWI775110B (zh) * 2020-07-15 2022-08-21 歆熾電氣技術股份有限公司 量子點複合材料及其製備方法與led封裝結構
KR20230041786A (ko) 2020-07-24 2023-03-24 어플라이드 머티어리얼스, 인코포레이티드 Uv-led 경화를 위한 티올계 가교제들을 갖는 양자점 배합물들
US11404612B2 (en) 2020-08-28 2022-08-02 Applied Materials, Inc. LED device having blue photoluminescent material and red/green quantum dots
US11646397B2 (en) 2020-08-28 2023-05-09 Applied Materials, Inc. Chelating agents for quantum dot precursor materials in color conversion layers for micro-LEDs
US11942576B2 (en) 2020-08-28 2024-03-26 Applied Materials, Inc. Blue color converter for micro LEDs
FR3124799A1 (fr) * 2021-06-30 2023-01-06 Aledia Nanoparticule émettrice de lumière et protégée, son procédé de fabrication et son application pour les convertisseurs de rayonnement de dispositif optoélectronique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120175588A1 (en) 2009-06-30 2012-07-12 Tiecheng Qiao Semiconductor nanocrystals used with led sources
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
US20150053914A1 (en) 2013-08-21 2015-02-26 Juanita N. Kurtin Semiconductor structure with insulator coating

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1812335A4 (en) * 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
KR100783251B1 (ko) * 2006-04-10 2007-12-06 삼성전기주식회사 양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법
KR101462651B1 (ko) * 2007-08-23 2014-11-17 삼성전자 주식회사 나노결정 혼합물 및 그를 이용하는 발광 다이오드
GB0821122D0 (en) * 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
JP2014507013A (ja) * 2011-02-07 2014-03-20 インテマティックス・コーポレーション 光ルミネセンスカラーホイール
JPWO2014024218A1 (ja) * 2012-08-06 2016-07-21 パナソニックＩｐマネジメント株式会社 蛍光体光学素子、その製造方法及び光源装置
US9658520B2 (en) * 2012-10-01 2017-05-23 Koninklijke Philips N.V. Wavelength converting element comprising ceramic capsule
WO2015037733A1 (ja) * 2013-09-13 2015-03-19 凸版印刷株式会社 波長変換シート及びバックライトユニット
WO2015054493A1 (en) * 2013-10-09 2015-04-16 Nanocomposix, Inc. Encapsulated particles
HK1222879A1 (zh) * 2013-11-13 2017-07-14 Nanoco Technologies Ltd 包含量子点荧光体的led盖
WO2016016134A1 (en) * 2014-07-28 2016-02-04 Koninklijke Philips N.V. Silica coated quantum dots with improved quantum efficiency
US10106734B2 (en) * 2014-07-30 2018-10-23 Osram Opto Semiconductor Gmbh Alloyed rod structure in a nanocrystalline quantum dot
JP6428089B2 (ja) * 2014-09-24 2018-11-28 日亜化学工業株式会社 発光装置
JP6354502B2 (ja) * 2014-09-30 2018-07-11 セイコーエプソン株式会社 光源装置およびプロジェクター
US10156325B2 (en) * 2014-09-30 2018-12-18 Lumileds Llc Quantum dots in enclosed environment
US10266760B2 (en) * 2015-05-13 2019-04-23 Osram Opto Semiconductors Gmbh Composition of, and method for forming, a semiconductor structure with multiple insulator coatings
CN107949925A (zh) * 2015-06-30 2018-04-20 剑桥企业有限公司 发光装置
JP2018529832A (ja) * 2015-09-15 2018-10-11 スリーエム イノベイティブ プロパティズ カンパニー 添加剤安定化複合ナノ粒子
CN107017325B (zh) * 2015-11-30 2020-06-23 隆达电子股份有限公司 量子点复合材料及其制造方法与应用
DE112017000676B4 (de) * 2016-02-04 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zum Anlegen von Licht und Wärme auf Quantenpunkte zur Erhöhung der Quantenausbeute
US20180040783A1 (en) * 2016-08-03 2018-02-08 Lumileds Llc Coated wavelength converting nanoparticles
US10407613B2 (en) * 2017-01-27 2019-09-10 Osram Opto Semiconductors Gmbh Composition of, and method for forming, a semiconductor structure with polymer and insulator coatings
US10345688B2 (en) * 2017-04-18 2019-07-09 Unique Materials Co., Ltd. Light emitting apparatus using composite material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120175588A1 (en) 2009-06-30 2012-07-12 Tiecheng Qiao Semiconductor nanocrystals used with led sources
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
US20150053914A1 (en) 2013-08-21 2015-02-26 Juanita N. Kurtin Semiconductor structure with insulator coating

Also Published As

Publication number Publication date
US20190011819A1 (en) 2019-01-10
JP2018178116A (ja) 2018-11-15
TW201903120A (zh) 2019-01-16
US20180364553A1 (en) 2018-12-20
US20180299755A1 (en) 2018-10-18
US10345688B2 (en) 2019-07-09
US10317785B2 (en) 2019-06-11
CN108732741A (zh) 2018-11-02
US10234753B2 (en) 2019-03-19

Similar Documents

Publication Publication Date Title
TWI653314B (zh) 使用複合材料的發光裝置、複合材料的製造方法及光學膜
US8941293B2 (en) Solid state lighting devices comprising quantum dots
JP4789809B2 (ja) ナノ結晶をドーピングしたマトリックス
TWI631395B (zh) 光學構件與具有其之顯示裝置及其製造方法
CN1748326B (zh) 掺入发光材料的发光器件及其形成方法
TWI655268B (zh) 用於生產發光材料之程序、波長轉換器及發光裝置
US20080173886A1 (en) Solid state lighting devices comprising quantum dots
TWI613275B (zh) 量子點複合材料及其製造方法與應用
TW200822398A (en) Light-emitting device
TWI680178B (zh) 量子點材料及其製備方法
KR102637839B1 (ko) 디스플레이 디바이스들을 위한 백라이트 유닛들
KR101585430B1 (ko) 형광체용 나노하이브리드 복합체, 그를 이용한 광학 모듈 및 그의 제조방법
KR20160072177A (ko) 발광 다이오드 (led) 디바이스들
TWI690750B (zh) 量子點顯示裝置
JP2007524119A5 (https=)
JP6344190B2 (ja) 光半導体発光装置、照明器具、表示装置、及び光半導体発光装置の製造方法
JP2020501296A (ja) 表示装置用のバックライトユニット
TW200805698A (en) High efficient phosphor-converted light emitting diode
TW201143160A (en) Light-emitting device
JP6287747B2 (ja) 光散乱組成物、光散乱複合体及びその製造方法
KR101413660B1 (ko) 발광다이오드용 양자점-고분자 복합체 플레이트 및 그 제조 방법
TWI643363B (zh) 波長轉換元件、其製造方法及發光裝置
CN121665774A (zh) 一种次毫米发光二极管及其制备方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees