TWI652761B - Substrate processing device - Google Patents

Abstract

The substrate processing apparatus includes a plurality of chuck members 13 that are held in a horizontal posture by holding the substrate W horizontally; a processing liquid supply means for supplying the processing liquid to the substrate W; and a heat source disposed above the substrate W. . The chuck member 13 includes a conductive member 41, at least a part of which is formed of a carbon-containing material, and includes a base portion 46 disposed below the substrate W, and a contact portion 47 upward from the upper surface 46a of the base portion 46. And the chuck cover 42 is attached to the conductive member 41 and covers the contact portion 47 without covering at least a part of the base portion 46 in a plan view.

Description

   Substrate processing device   

The present invention relates to a substrate processing apparatus for processing a substrate. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, Photomask substrate, ceramic substrate, solar cell substrate, and the like.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus that processes a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. Japanese Patent Application Laid-Open No. 2014-241390 discloses a monolithic substrate processing apparatus that processes substrates one by one.

The substrate processing apparatus includes a spin chuck that rotates the substrate about a vertical axis of rotation passing through a center portion of the substrate while holding the substrate horizontally; a nozzle that sprays a chemical solution or rinses toward the upper surface of the substrate. Processing liquids such as liquids; and infrared heaters that emit light toward the upper surface of the substrate. The spin chuck includes a plurality of chuck pins that are pressed against the outer periphery of the substrate.

The chuck pin includes a conductive member having conductivity and a pin cover covering the conductive member. The conductive member includes a base portion disposed above the rotating base and a grip portion protruding upward from the upper surface of the base portion. The pin cover covers substantially the entire area of the conductive member in a plan view. The conductive member is protected by the pin cover from the light of the infrared heater. This prevents deformation of the conductive member due to temperature rise.

In Japanese Patent Application Laid-Open No. 2014-241390, in order to protect the conductive member from being affected by the heat of a heat source, the conductive member is covered with a pin cover. However, in this chuck pin, a treatment liquid is likely to remain between the conductive member and the pin cover. In particular, since the pin cover covers almost the entire area of the conductive member, the remaining amount of the processing liquid increases. The processing liquid remaining between the conductive member and the pin cover may become particles that may cause contamination of the substrate.

Therefore, one object of the present invention is to protect the conductive member of the chuck member from being affected by a heat source, and to reduce the processing liquid remaining between the conductive member and the chuck cover.

An embodiment of the present invention provides a substrate processing apparatus including a plurality of chuck members and holding the substrate in a horizontal posture by holding the substrate horizontally; and a processing liquid supply means for holding the plurality of chuck members. The aforementioned substrate supplies the processing liquid; the heat source is disposed above the aforementioned substrate held by the plurality of chuck members; and the chuck opening and closing mechanism switches the plurality of chuck members between a closed state and an open state, and the aforementioned closed state The state in which the plurality of chuck members are pressed to the outer periphery of the substrate, and the open state is a state in which the plurality of chuck members are pressed against the substrate; at least one of the plurality of chuck members includes: conductive The member, at least a part of which is formed of a carbon-containing material, includes: a base portion disposed below the substrate; and a contact portion protruding upward from the upper surface of the base portion and pressed against an outer peripheral portion of the substrate; And a chuck cover, which is mounted on the conductive member and does not cover at least one of the base portions in a plan view It partially covers the aforementioned contact portion.

According to this configuration, the contact portion pressed against the outer peripheral portion of the substrate is provided on the conductive member of the chuck member. The contact portion is covered by the chuck cover in a plan view. Therefore, the contact portion can be protected from the heat of the heat source. Furthermore, since a part or all of the base portion provided on the conductive member is not covered by the chuck cover in a plan view, it is possible to reduce the residual in the conductivity compared to a case where most of the base portion is covered by the chuck cover. Treatment liquid between component and chuck cover. Further, the base portion is disposed below the substrate, and is spaced downward from a heat source disposed above the substrate. Therefore, even if the base portion is not covered by the chuck cover, the base portion is less susceptible to heat than a contact portion protruding upward from the upper surface of the base portion. Thereby, it is possible to reduce particles caused by the residual treatment liquid while preventing deformation of the conductive member caused by temperature rise.

Each of the plurality of chuck members may include a conductive member and a chuck cover, or not all of them, and only one or more chuck members may include a conductive member and a chuck cover. The chuck member provided with the conductive member and the chuck cover may be a movable chuck capable of moving relative to the rotation axis of the substrate, or a fixed chuck unable to move relative to the rotation axis of the substrate.

In the foregoing embodiment, at least one of the following features may be added to the substrate processing apparatus.

The chuck cover covers the entire area of the top surface of the contact portion located at the uppermost portion of the conductive member in a plan view.

According to this configuration, the entire area of the top surface of the contact portion is covered with the chuck cover in a plan view. The top surface of the contact portion is the uppermost portion of the conductive member and is closest to the heat source. Therefore, by covering the entire area of the top surface of the contact portion with the chuck cover, it is possible to effectively prevent deformation of the conductive member caused by a temperature rise.

The chuck cover includes a cover portion, which is disposed above the top surface of the contact portion at the uppermost position in the conductive member, and forms a supply space between the lower surface of the cover portion and the top surface of the contact portion. The gap through which the liquid passes.

According to this configuration, a gap is formed between the lower surface of the cover portion and the top surface of the contact portion. The distance in the vertical direction from the top surface of the contact portion to the lower surface of the cover portion, that is, the height of the gap is greater than the height of a droplet or a liquid film formed on the top surface of the contact portion. If the gap is very narrow, it is difficult for liquid to drain from between the lower surface of the cover portion and the top surface of the contact portion. Therefore, by providing a gap between the lower surface of the cover portion and the top surface of the contact portion to allow the liquid to flow smoothly, the treatment liquid remaining between the two can be reduced.

The chuck cover includes a cover portion disposed above a top surface of the contact portion located at an uppermost position in the conductive member, and an insertion shaft inserted into an insertion hole opened in the top surface of the contact portion.

According to this configuration, since the chuck cover is provided with the cover portion and the insertion shaft, liquid residue can be reduced, and the chuck cover can be attached to the conductive member without using a fastening member. Specifically, the insertion shaft of the chuck cover is inserted into an insertion hole opened in the top surface of the contact portion. Thereby, the chuck cover is attached to the conductive member, and the cover portion of the chuck cover is disposed above the top surface of the contact portion. In this way, the chuck cover can be attached to the conductive member by a simple operation of inserting the insertion shaft of the chuck cover into the insertion hole of the conductive member.

The chuck cover further includes a hook portion protruding from an outer peripheral surface of the insertion shaft; the hook portion is inserted into a hook insertion hole recessed from an inner peripheral surface of the insertion hole.

According to this configuration, if the insertion shaft of the chuck cover is inserted into the insertion hole of the conductive member and the chuck cover is arranged at a predetermined mounting position, the hook portion protruding from the outer peripheral surface of the insertion shaft is inserted into the self-insertion. The recessed hook on the inner peripheral surface of the hole is inserted into the hole. The axial movement of the insertion shaft relative to the insertion hole is restricted by the contact between the outer surface of the hook portion and the inner surface of the hook insertion hole. Therefore, detachment of the chuck cover from the conductive member can be reliably prevented.

The chuck cover covers a top surface of the contact portion located at the uppermost portion of the conductive member in a plan view; at least a part of an outer edge of the chuck cover overlaps an outer edge of the top surface of the contact portion in a plan view. .

According to this configuration, part or all of the top surface of the contact portion is covered with the chuck cover in a plan view. This effectively protects the portion of the conductive member closest to the heat source. Furthermore, the chuck cover is miniaturized so that part or all of the outer edge of the chuck cover overlaps with the outer edge of the top surface of the contact portion in a plan view. Therefore, while the top surface of the contact portion can be effectively protected, the chuck cover can be prevented from increasing in size.

Only a part of the outer edge of the chuck cover may overlap the outer edge of the top surface of the contact portion in a plan view, or any part of the outer edge of the chuck cover may overlap the outer edge of the top surface of the contact portion in a plan view. In the former case, the chuck cover may cover the entire area of the top surface of the contact portion when viewed from above, or may cover only a part of the top surface of the contact portion when viewed from above. In the latter case, the entire area of the top surface of the contact portion is covered by the chuck cover in plan view. The so-called outer edge of the chuck cover overlaps the outer edge of the top surface of the contact portion in a plan view, and includes not only the case where the outer edge of the chuck cover is directly above the outer edge of the top surface of the contact portion, but also the The case where the outer edge is horizontally offset from the outer edge of the top surface of the contact portion by several mm (for example, 3 mm or less).

The chuck cover covers a top surface of the contact portion located at the uppermost portion of the conductive member in a plan view, and protrudes from an outer edge of the top surface of the contact portion.

According to this configuration, part or all of the top surface of the contact portion is covered with the chuck cover in a plan view. This effectively protects the portion of the conductive member closest to the heat source. Furthermore, since the eaves portion protruding from the outer edge of the top surface of the contact portion is provided on the chuck cover, a part of the conductive member other than the top surface is protected by the eaves portion of the chuck cover without being affected by the heat source. This makes it possible to more reliably protect the conductive member from being affected by a heat source.

The foregoing or other other objects, features, and effects in the present invention will become apparent from the following description of embodiments with reference to the accompanying drawings.

1‧‧‧ substrate processing device

2‧‧‧ processing unit

3‧‧‧control device

4‧‧‧ chamber

5‧‧‧rotary chuck

6‧‧‧ treatment liquid supply device

7‧‧‧Heating device

8‧‧‧ shield

8a‧‧‧upper end

12‧‧‧ rotating base

13‧‧‧Chuck member

13a‧‧‧movable chuck

13b‧‧‧Fixed chuck

14‧‧‧ chuck opening and closing mechanism

15‧‧‧rotation axis

16‧‧‧Rotary motor

17‧‧‧The first liquid medicine nozzle

18‧‧‧The first liquid medicine piping

19‧‧‧The first liquid medicine valve

20‧‧‧The first liquid arm

21‧‧‧The first nozzle moving device

22‧‧‧Second chemical liquid nozzle

23‧‧‧Second chemical liquid pipe

24‧‧‧Second liquid medicine valve

25‧‧‧Second Liquid Arm

26‧‧‧Second nozzle moving device

27‧‧‧ Eluent nozzle

28‧‧‧ Eluent piping

29‧‧‧ Eluent Valve

30‧‧‧ Eluent Arm

31‧‧‧ the third nozzle moving device

32‧‧‧ Infrared heater

32a‧‧‧irradiated surface

33‧‧‧ Infrared Light

34‧‧‧ Lampshade

35‧‧‧heater arm

36‧‧‧ heater moving device

41‧‧‧Conductive member

42‧‧‧ chuck cover

43‧‧‧ fixing bolt

44‧‧‧ top cover

45‧‧‧washer

46‧‧‧Basic Department

46a‧‧‧upper surface

47‧‧‧Contact

47a‧‧‧Top

48‧‧‧ holding section

48a‧‧‧ Inside surface of upper groove

48b‧‧‧Inner surface of the lower groove

49‧‧‧Support Department

49a‧‧‧ support

51‧‧‧ Bolt insertion hole

52‧‧‧upper tube

53‧‧‧Ring

54‧‧‧ lower tubular part

55‧‧‧washer insertion hole

56‧‧‧ head

57‧‧‧ flange

58‧‧‧Shaft

59‧‧‧Support shaft

60‧‧‧ shaft insertion hole

61‧‧‧Circular Department

62‧‧‧Tube

63, 65‧‧‧ Cover

64‧‧‧ Insertion

65a‧‧‧upper surface

65b‧‧‧inclined

65c‧‧‧outer surface

65d‧‧‧ lower surface

65o‧‧‧rim

66‧‧‧Insert shaft

66a‧‧‧outer surface

66b‧‧‧inclined

66c‧‧‧ lower surface

67‧‧‧ Hook

68‧‧‧ insertion hole

68a‧‧‧Inner peripheral surface

68b‧‧‧underside

69‧‧‧ Hook insertion section

71‧‧‧ cornice

A1‧‧‧axis of rotation

A2‧‧‧ chuck rotation axis

A3‧‧‧ heater rotation axis

G1‧‧‧ Clearance

W‧‧‧ substrate

FIG. 1 is a schematic view of horizontally observing the inside of a chamber provided in a substrate processing apparatus according to an embodiment of the present invention.

Figure 2 is a schematic top view of a rotating base and its associated structure.

Figure 3 is a top view of the chuck member.

FIG. 4 is a cross-sectional view showing a vertical section taken along the line IV-IV shown in FIG. 3.

FIG. 5 is a cross-sectional view showing a vertical section taken along the line V-V shown in FIG. 3.

FIG. 6 is an external view of the chuck cover when viewed in the direction of the arrow VI shown in FIG. 5.

FIG. 7 is a cross-sectional view showing a horizontal section taken along the line VII-VII shown in FIG. 6.

Fig. 8 is a process diagram for explaining an example of processing of a substrate by a substrate processing apparatus.

Fig. 9 is a plan view showing a part of a chuck member according to another embodiment of the present invention.

FIG. 1 is a schematic view of the interior of a chamber 4 provided in a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a schematic top view of the rotating base 12 and its associated structure.

As shown in FIG. 1, the substrate processing apparatus 1 is a single-chip apparatus that processes a disc-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a processing unit 2 that processes the substrate W using a processing fluid such as a processing liquid or a processing gas; a transfer robot (not shown) that transfers the substrate W to the processing unit 2; and a control device 3 that controls the substrate processing apparatus 1. The control device 3 is a computer. The computer includes: a memory section, which stores information such as programs, and an arithmetic section, and controls the substrate processing device 1 based on the information stored in the memory section.

The processing unit 2 includes: a box-shaped chamber 4 having an internal space; and a rotating chuck 5 that holds a substrate W horizontally in the chamber 4 while winding the substrate W through a vertical portion of a center portion of the substrate W The rotation axis A1 rotates; the processing liquid supply device 6 supplies the processing liquid to the substrate W held on the spin chuck 5; the heating device 7 heats the substrate W held on the spin chuck 5 from above; and a cylindrical shape A cup 8 surrounds the chuck 5.

The rotating chuck 5 includes a circular plate-shaped rotating base 12 held in a horizontal posture, a plurality of chuck members 13 protruding upward from the outer peripheral portion of the upper surface of the rotating base 12, and a chuck opening and closing mechanism 14 for making a plurality of The chuck members 13 are opened and closed. The rotating chuck 5 further includes: a rotation shaft 15 extending downward from a central portion of the rotation base 12 along the rotation axis A1; and a rotation motor 16 that rotates the rotation base 12 and the chuck member 13 by rotating the rotation shaft 15 The rotation axis A1 rotates.

The rotating base 12 has an outer diameter larger than the diameter of the substrate W. The center line of the rotation base 12 is disposed on the rotation axis A1. The plurality of chuck members 13 are held on the rotating base 12 at the outer periphery of the rotating base 12. The substrate W is held by a plurality of chuck members 13 in a state where the lower surface of the substrate W and the upper surface of the rotating base 12 are spaced apart in the vertical direction. When the rotation motor 16 rotates the rotation shaft 15 in this state, the substrate W rotates about the rotation axis A1 together with the rotation base 12 and the chuck member 13.

As shown in FIG. 2, the plurality of chuck members 13 are arranged at intervals in the circumferential direction (the direction about the rotation axis A1). FIG. 2 illustrates an example in which six chuck members 13 are provided on the rotary chuck 5. The six chuck members 13 are composed of three movable chucks 13 a capable of moving relative to the rotating base 12 and three fixed chucks 13 b fixed to the rotating base 12. The three movable chucks 13a are aligned in the circumferential direction without the fixed chucks 13b interposed therebetween. The number of the movable chucks 13a may be less than three and may be more than three. Each of the plurality of chuck members 13 may be a movable chuck 13a.

The movable chuck 13a can be rotated relative to the closed position (position shown in FIG. 2) where the movable chuck 13a is pressed on the outer peripheral surface of the substrate W and the open position of the movable chuck 13a away from the outer peripheral surface of the substrate W. The base 12 rotates around the chuck rotation axis A2. The shape or structure of the fixed chuck 13b is the same as that of the movable chuck 13a. The movable chuck 13 a is different from the fixed chuck 13 b in that a support shaft 59 (see FIG. 4) connected to the movable chuck 13 a is driven by the chuck opening and closing mechanism 14. The chuck opening and closing mechanism 14 moves the movable chuck 13 a to a closed state in which the plurality of chuck members 13 are pressed against the outer periphery of the substrate W, and an open state in which the plurality of chuck members 13 press the substrate W. Between a plurality of chuck members 13.

As shown in FIG. 1, the processing liquid supply device 6 includes a first chemical liquid nozzle 17 that sprays a first chemical liquid toward the upper surface of the substrate W; a first chemical liquid pipe 18 connected to the first chemical liquid nozzle 17; The chemical liquid valve 19 is inserted in the first chemical liquid pipe 18; the first chemical liquid arm 20 is provided with a first chemical liquid nozzle 17 at the front end; and the first nozzle moving device 21 is configured to make the first chemical liquid arm 20 The movement causes the liquid contact position of the first chemical solution to move within the upper surface of the substrate W.

When the first chemical liquid valve 19 is opened, the first chemical liquid supplied from the first chemical liquid pipe 18 to the first chemical liquid nozzle 17 is discharged downward from the first chemical liquid nozzle 17. When the first chemical liquid valve 19 is closed, the ejection of the first chemical liquid from the first chemical liquid nozzle 17 is stopped. The first nozzle moving device 21 moves the first chemical liquid nozzle 17 to move the liquid contact position of the first chemical liquid within the upper surface of the substrate W by moving the first chemical liquid nozzle 17. Further, the first nozzle moving device 21 moves the first chemical liquid nozzle 17 to a processing position where the first chemical liquid nozzle 17 ejected from the first chemical liquid nozzle 17 contacts the upper surface of the substrate W and the first chemical liquid nozzle 17 is retracted to a plan view. The rotating chuck 5 moves between retreat positions.

The processing liquid supply device 6 includes: a second chemical liquid nozzle 22 that sprays a second chemical liquid toward the upper surface of the substrate W; a second chemical liquid pipe 23 connected to the second chemical liquid nozzle 22; a second chemical liquid valve 24; The second chemical liquid pipe 23 is installed; the second chemical liquid arm 25 is provided with a second chemical liquid nozzle 22 at the front end; and the second nozzle moving device 26 moves the second chemical liquid arm 25 to move the second drug The liquid-contacting position of the liquid moves within the upper surface of the substrate W.

When the second chemical liquid valve 24 is opened, the second chemical liquid supplied from the second chemical liquid pipe 23 to the second chemical liquid nozzle 22 is discharged downward from the second chemical liquid nozzle 22. When the second chemical liquid valve 24 is closed, the ejection of the second chemical liquid from the second chemical liquid nozzle 22 is stopped. The second nozzle moving device 26 moves the second chemical liquid nozzle 22 to move the liquid contact position of the second chemical liquid within the upper surface of the substrate W by moving the second chemical liquid nozzle 22. Further, the second nozzle moving device 26 moves the second chemical liquid nozzle 22 to a processing position where the second chemical liquid sprayed from the second chemical liquid nozzle 22 contacts the upper surface of the substrate W and the second chemical liquid nozzle 22 is retracted to a plan view The rotating chuck 5 moves between retreat positions.

The first chemical solution and the second chemical solution include, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), and organic bases (such as TMAH (Tetramethylammonium hydroxide; Tetramethylammonium hydroxide; etc.), a liquid of at least one of a surfactant and an anticorrosive. Specific examples of the first chemical solution are SPM (sulfuric acid / hydrogen peroxide mixture; mixed solution of sulfuric acid and hydrogen peroxide, that is, a mixed solution of sulfuric acid and hydrogen peroxide water), phosphoric acid (such as a concentration of 80% or more and less than 100% Phosphoric acid aqueous solution), hydrofluoric acid (hydrofluoric acid). A specific example of the second chemical liquid is SC1 (Standard clean 1; a mixed liquid of ammonia water, hydrogen peroxide water, and water).

The processing liquid supply device 6 includes an eluent nozzle 27 that sprays the eluent toward the upper surface of the substrate W, an eluent pipe 28 connected to the eluent nozzle 27, and an eluent valve 29 interposed in the eluent. Pipe 28; eluent arm 30, eluent nozzle 27 and third nozzle moving device 31 are installed at the front end, and the liquid contact position of the eluent is on the upper surface of the substrate W by moving the eluent arm 30 Move inside.

When the eluent valve 29 is opened, the eluent supplied from the eluent pipe 28 to the eluent nozzle 27 is ejected downward from the eluent nozzle 27. When the eluent valve 29 is closed, the ejection of the eluent from the eluent nozzle 27 is stopped. The third nozzle moving device 31 moves the eluent contact position within the upper surface of the substrate W by moving the eluent nozzle 27. Further, the third nozzle moving device 31 moves the eluent nozzle 27 to a processing position where the eluent sprayed from the eluent nozzle 27 contacts the upper surface of the substrate W, and the eluent nozzle 27 is retracted around the rotary chuck 5 Move between their retreat positions.

The eluent supplied to the eluent nozzle 27 is pure water (deionized water). The eluent supplied to the eluent nozzle 27 is not limited to pure water, but may be carbonated water, electrolytic ion water, hydrogen water, ozone water, IPA (isopropyl alcohol), or a diluted concentration (for example, about 10 ppm to 100 ppm). ) Of hydrochloric acid water.

The shield 8 surrounds the rotating base 12. When the processing liquid is supplied to the substrate W while the substrate W is rotated by the spin chuck 5, the processing liquid is scattered from the substrate W to the periphery of the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion 8 a of the shield 8 opened upward is disposed above the rotating base 12. Therefore, the treatment liquid such as the chemical liquid or the eluent discharged to the periphery of the substrate W is caught by the shield 8. The treatment liquid caught by the shield 8 is sent to a recovery device or a drainage device (not shown).

The heating device 7 includes an infrared heater 32 disposed above the substrate W held on the rotating chuck 5; a heater arm 35 with an infrared heater 32 mounted at a front end thereof; and a heater moving device 36 for the heater arm 35 mobile.

The infrared heater 32 includes an infrared lamp 33 that emits light including infrared rays, and a lamp cover 34 that houses the infrared lamp 33. The infrared lamp 33 is disposed inside the lamp cover 34. The cover 34 is smaller than the substrate W in a plan view. The infrared lamp 33 and the lamp cover 34 are attached to the heater arm 35. The infrared lamp 33 and the lamp cover 34 move with the heater arm 35.

The infrared lamp 33 is a halogen lamp. The infrared lamp 33 includes a filament and a quartz tube that accommodates the filament. The infrared lamp 33 may be a carbon heater or a heating element other than a halogen lamp and a carbon heater. At least a part of the globe 34 is formed of a material having translucency and heat resistance such as quartz.

The cover 34 has a bottom wall parallel to the upper surface of the substrate W. The infrared lamp 33 is disposed above the bottom wall. The lower surface of the bottom wall includes an irradiation surface 32a that is parallel and flat to the upper surface of the substrate W. In a state where the infrared heater 32 is disposed above the substrate W, the irradiation surface 32a faces the upper surface of the substrate W at intervals. When the infrared lamp 33 emits light in this state, the light passing through the irradiation surface 32 a is irradiated onto the upper surface of the substrate W. The irradiation surface 32a is, for example, a circle having a diameter smaller than the radius of the substrate W. The irradiation surface 32a may have a shape other than a circle.

The heater moving device 36 holds the infrared heater 32 at a predetermined height. The heater moving device 36 horizontally moves the infrared heater 32 by rotating the heater arm 35 about the heater rotation axis A3, and the heater rotation axis A3 is vertically connected around the rotary chuck 5 extend. As a result, the irradiation position (a part of the area on the upper surface of the substrate W) irradiated with infrared rays moves within the upper surface of the substrate W. As shown in FIG. 2, the heater moving device 36 moves the infrared heater 32 horizontally along an arc-shaped path passing through the center of the substrate W in a plan view. The infrared heater 32 moves in a horizontal plane, which includes above the rotating chuck 5. The heater moving device 36 changes the distance between the irradiation surface 32 a and the substrate W by moving the infrared heater 32 in the vertical direction.

The light of the infrared heater 32 is irradiated to an irradiation position in the upper surface of the substrate W. The control device 3 causes the rotary chuck 5 to rotate the substrate W while the infrared heater 32 emits infrared rays, and causes the heater moving device 36 to rotate the infrared heater 32 about the heater rotation axis A3. Thereby, the upper surface of the substrate W is scanned by the irradiation position as a heating position. Therefore, light including infrared rays is absorbed by the upper surface of the substrate W, and radiant heat is transmitted from the infrared lamp 33 to the substrate W. When the infrared lamp 33 emits infrared rays while the liquid such as the processing liquid is held on the substrate W, the substrate W and the processing liquid are heated and the temperature rises.

FIG. 3 is a plan view of the chuck member 13. FIG. 4 is a cross-sectional view showing a vertical section taken along the line IV-IV shown in FIG. 3. FIG. 5 is a cross-sectional view showing a vertical section taken along the line V-V shown in FIG. 3. FIG. 6 is an external view of the chuck cover 42 viewed in the direction of an arrow VI shown in FIG. 5. FIG. 7 is a cross-sectional view showing a horizontal section taken along the line VII-VII shown in FIG. 6. FIG. 3 shows a state where the chuck member 13 (movable chuck 13a) is disposed in the closed position.

As shown in FIG. 4, the chuck member 13 includes a conductive member 41, which is disposed above the rotating base 12 and a chuck cover 42, and covers the conductive member 41 in a plan view. The chuck member 13 further includes: a fixing bolt 43 that fixes the conductive member 41 to the support shaft 59 of the chuck opening and closing mechanism 14; a top cover 44 that covers the fixing bolt 43 in a plan view; and a ring-shaped washer 45 that is interposed between the conductive Between the sexual member 41 and the support shaft 59. In order to prevent the substrate W from being charged, the conductive member 41 is grounded via the fixing bolt 43 and the support shaft 59.

The conductive member 41 is formed of a composite material having chemical resistance and electrical conductivity. A specific example of the composite material is a material containing a resin and carbon. The conductive member 41 may be a laminated member in which a resin member formed of a resin and a carbon member formed of a carbon-containing carbon material are alternately laminated, or may be formed of a resin in which a carbon material is dispersed.

The carbon contained in the conductive member 41 may be a carbon fiber, or a powder or a particle of carbon. Specific examples of the resin contained in the conductive member 41 are PFA (tetrafluoro ethylene-perfluoro alkylvinyl ether copolymer), PCTFE (Poly Chloro Tri Furuoro Ethylene; polytrifluorochloride) Ethylene), PTFE (polytetrafluoroethylene; polytetrafluoroethylene), and PEEK (polyetheretherketone; polyetheretherketone).

The chuck cover 42 is formed of a resin having chemical resistance. Specific examples of the resin contained in the chuck cover 42 are PTFE, ETFE (ethylene tetrafluoroethylene; ethylene-tetrafluoroethylene copolymer), and PEEK. In the present embodiment, the chuck cover 42 is formed of white (including pure white and milky white) PTFE and has a surface other than white. As described above, since the conductive member 41 contains black carbon, the outer surface of the conductive member 41 is black. The outer surface of the chuck cover 42 has higher reflectance of light (visible light) than the outer surface of the conductive member 41.

As shown in FIG. 4, the conductive member 41 includes a base portion 46 disposed above the rotating base 12, and a contact portion 47 protruding upward from the upper surface 46 a of the base portion 46. The contact portion 47 refers to a portion located above the upper surface 46 a of the base portion 46. The upper surface 46a of the base portion 46 is, for example, a plane that is parallel and horizontal to the lower surface of the substrate W. The contact portion 47 includes a holding portion 48 that presses the outer peripheral portion of the substrate W, and a support portion 49 that supports the substrate W from below.

The substrate W is in contact with the contact portion 47 regardless of whether the plurality of chuck members 13 are in an open state or a closed state. The base portion 46 is disposed below the substrate W supported or held by the plurality of contact portions 47. The top surface 47a of the contact portion 47 is disposed above the substrate W supported or held by the contact portion 47. The top surface 47 a of the contact portion 47 is a horizontal plane, and is located at the uppermost position among the conductive members 41.

The base portion 46 is formed with a bolt mounting hole 51 into which the fixing bolt 43 and the top cover 44 are inserted. The base portion 46 is further formed with a washer mounting hole 55 into which the washer 45 is inserted. The bolt mounting hole 51 is a through hole penetrating the base portion 46 in the vertical direction. The washer mounting hole 55 is a recessed portion recessed upward from the lower surface of the base portion 46. The bolt mounting hole 51 is opened at the bottom surface of the washer mounting hole 55. The inner peripheral surface of the base portion 46 forming the through hole includes: an upper cylindrical portion 52 surrounding the top cover 44; an annular portion 53 contacting the flange portion 57 of the fixing bolt 43; and a lower cylindrical portion 54. The shaft portion 58 of the fixing bolt 43 is surrounded at intervals in the radial direction of the fixing bolt 43.

The fixing bolt 43 includes: a shaft portion 58 provided with a male thread; a head portion 56 to which a tool for rotating the fixing bolt 43 can be mounted; and a flange portion 57 disposed between the shaft portion 58 and the head portion 56. The male screw of the shaft portion 58 is mounted on a female screw provided on the inner peripheral surface of the support shaft 59. The lower surface of the flange portion 57 is pressed downward to the annular portion 53 of the base portion 46. The lower surface of the washer 45 is pressed downward to the upper end surface of the support shaft 59. The conductive member 41 and the washer 45 are sandwiched by the flange portion 57 and the support shaft 59 in the vertical direction. Thereby, the conductive member 41 and the washer 45 are fixed to the support shaft 59.

The support shaft 59 is inserted into a shaft insertion hole 60 opened on the outer surface of the rotating base 12. The rotating base 12 includes a circular plate portion 61 held in a horizontal posture, and a cylindrical portion 62 protruding upward from the circular plate portion 61. The shaft insertion hole 60 extends from the internal space of the circular plate portion 61 toward the upper end surface of the cylindrical portion 62. The upper end surface of the cylindrical portion 62 is spaced downward from the lower surface of the washer 45. The support shaft 59 and the cylindrical portion 62 are arranged below the chuck member 13. The chuck opening / closing mechanism 14 rotates the support shaft 59 connected to the movable chuck 13a around the center line of the vertical support shaft 59 corresponding to the chuck rotation axis A2. Thereby, the conductive member 41, the chuck cover 42, the fixing bolt 43, the top cover 44, and the washer 45 are integrally rotated around the chuck rotation axis A2.

The top cover 44 includes a cover portion 63 that covers the conductive member 41 in a plan view, and an insertion portion 64 that is inserted into the bolt mounting hole 51. The cover portion 63 is disposed above the conductive member 41. The lower surface of the cover portion 63 is in contact with the upper surface 46 a of the base portion 46. The insertion portion 64 extends downward from the cover portion 63. The upper tubular portion 52 on the base portion 46 surrounds the insertion portion 64. The male screw provided on the insertion portion 64 is a female screw provided on the upper cylindrical portion 52. Thereby, the top cover 44 is fixed to the conductive member 41. The upper end of the bolt mounting hole 51 is blocked by the top cover 44.

As shown in FIG. 5, the grip portion 48 of the contact portion 47 includes two groove inner surfaces forming a receiving groove opened inward. The inner surfaces of the two grooves include: an upper surface of the groove 48a, which extends obliquely upward from the bottom of the receiving groove; and a lower surface of the groove 48b, which extends obliquely downward from the bottom of the receiving groove. The support portion 49 of the contact portion 47 includes a support surface 49a inclined obliquely with respect to a horizontal plane. The support surface 49a extends obliquely downward from the lower end of the lower groove inner surface 48b in the direction of the rotation axis A1 (see FIG. 2). The supporting surface 49a is inclined with respect to the horizontal plane at an angle smaller than the inclination angle of the lower groove inner surface 48b with respect to the horizontal plane.

When the plurality of chuck members 13 are in an open state, the substrate W is supported by the plurality of support portions 49 in a state where the plurality of holding portions 48 are separated from the substrate W. When the chuck opening / closing mechanism 14 moves the movable chuck 13 a inward in the closed position in this state, the plurality of holding portions 48 are brought close to the substrate W while the substrate W is pulled up by the plurality of support portions 49. Outer periphery. In this process, the supporting surface 49a of the supporting portion 49 is separated from the substrate W, and the upper groove inner surface 48a and the lower groove inner surface 48b of the holding portion 48 are pressed against the outer peripheral portion of the substrate W. In contrast, when the chuck opening / closing mechanism 14 moves the movable chuck 13 a outward in the direction of the open position, the holding portion 48 is separated from the substrate W, and the supporting surface 49 a of the supporting portion 49 is in contact with the outer periphery of the substrate W.

As shown in FIG. 5, the chuck cover 42 includes a cover portion 65 disposed above the contact portion 47, and an insertion shaft 66 inserted into an insertion hole 68 and a hook portion 67 opened in the top surface 47 a of the contact portion 47 and accommodated in A hook insertion portion 69 is provided in the insertion hole 68. The insertion shaft 66 extends downward from the cover portion 65, and the hook portion 67 projects outward from the insertion shaft 66. The outline shape of the cover portion 65 in plan view is the same as the top surface 47 a of the contact portion 47. As shown in FIG. 3, the outer edge 65 o of the cover portion 65 overlaps the outer edge of the top surface 47 a of the contact portion 47 at any position in a plan view. The cover portion 65 covers the entire area of the top surface 47 a of the contact portion 47 in a plan view.

As shown in FIG. 6, the cover portion 65 of the chuck cover 42 includes: an upper surface 65a, which is horizontal and flat; an annular inclined surface 65b, which extends obliquely downward from the outer edge of the upper surface 65a; The outer edge of 65b extends downward and the lower surface 65d extends horizontally inward from the lower end of the outer peripheral surface 65c to the outer peripheral surface 66a of the insertion shaft 66. The lower surface 65d is spaced upward from the top surface 47a of the contact portion 47 and faces parallel to the top surface 47a of the contact portion 47. The lower surface 65d of the cover portion 65 and the top surface 47a of the contact portion 47 form a gap G1 between the chuck cover 42 and the contact portion 47. The size of the gap G1, that is, the distance in the vertical direction from the top surface 47a of the contact portion 47 to the lower surface 65d of the cover portion 65 is, for example, 0.5 mm to 1.0 mm.

When the substrate W is processed, the chemical solution and the eluent are sequentially supplied to the substrate W, and then the substrate W is dried by high-speed rotation. Since there is a gap G1 between the conductive member 41 and the chuck cover 42, liquid such as a chemical solution is easily discharged from between the conductive member 41 and the chuck cover 42. Even if a trace amount of the medicinal solution remains in the gap G1 between the conductive member 41 and the chuck cover 42, the eluent is supplied to the gap G1. Thereby, the medicinal solution is rinsed from the gap G1. Further, since the eluent between the conductive member 41 and the chuck cover 42 is discharged from the gap G1 when the substrate W is dried, the eluent does not easily remain in the gap G1. Therefore, it is possible to reduce particles caused by the liquid remaining between the conductive member 41 and the chuck cover 42.

As shown in FIG. 6, the insertion shaft 66 of the chuck cover 42 includes a lower surface 66c that is horizontal and flat, a ring-shaped inclined surface 66b that extends obliquely upward from the outer edge of the lower surface 66c, and a cylindrical outer peripheral surface 66a. And extends upward from the upper end of the inclined surface 66b. The hook portion 67 protrudes outward from the outer peripheral surface 66 a of the insertion shaft 66. The hook portion 67 is provided at the front end of the insertion shaft 66. The lower surface of the hook portion 67 is inclined with respect to the horizontal plane at an angle smaller than the inclined surface 66 b of the insertion shaft 66.

As shown in FIG. 7, the insertion shaft 66 has an elliptical horizontal section. FIG. 7 shows an example in which two protrusions protruding from the outer peripheral surface 66a of the insertion shaft 66 are provided on the hook portion 67. As shown in FIG. The hook portion 67 may be a ring-shaped protrusion continuous across the entire circumference of the insertion shaft 66. The two protrusions protrude in opposite directions from two positions on the outer peripheral surface 66a of the insertion shaft 66 from two positions around the center line of the insertion shaft 66 at different 180-degree rotation angles. The two protrusions are located on a straight line extending along the short axis of the insertion shaft 66.

As shown in FIG. 6, the insertion hole 68 of the conductive member 41 is a recessed portion extending downward from the top surface 47 a of the contact portion 47. The insertion hole 68 includes an inner peripheral surface 68 a that surrounds the outer peripheral surface 66 a of the insertion shaft 66, and a bottom surface 68 b that supports the lower surface 66 c of the insertion shaft 66. As shown in FIG. 7, the insertion hole 68 has an elliptical horizontal cross section. The horizontal section of the insertion hole 68 is similar to the horizontal section of the insertion shaft 66 and is larger than the horizontal section of the insertion shaft 66. The hook insertion portion 69 is recessed outward from the inner peripheral surface 68 a of the insertion hole 68. FIG. 7 shows an example in which two recessed portions facing each other through the insertion hole 68 are provided in the hook insertion portion 69. The hook insertion portion 69 may be a continuous recessed portion extending across the entire circumference of the insertion hole 68.

When the insertion shaft 66 is inserted into the insertion hole 68, the hook portion 67 is pressed against the inner peripheral surface 68 a of the insertion hole 68 and elastically deforms. Therefore, the insertion shaft 66 moves in the direction of the bottom surface 68b of the insertion hole 68 in a state where the hook portion 67 has been elastically deformed. When the lower surface 66c of the insertion shaft 66 reaches the bottom surface 68b of the insertion hole 68, the movement of the insertion shaft 66 relative to the insertion hole 68 is stopped, and the chuck cover 42 is held there. Then, the hook portion 67 enters the hook insertion portion 69 and returns to the original shape. The upward movement of the chuck cover 42 with respect to the conductive member 41 is restricted by the contact between the outer surface of the hook portion 67 and the inner surface of the hook insertion portion 69. The position where the lower surface 66c of the insertion shaft 66 contacts the bottom surface 68b of the insertion hole 68 is set such that a gap G1 is formed between the conductive member 41 and the chuck cover 42.

As shown in FIG. 3, the base portion 46 is larger than the contact portion 47 in a plan view. The contact portion 47 is located around the chuck rotation axis A2 in a plan view and does not intersect the chuck rotation axis A2. When the substrate W is held by the plurality of chuck members 13, a portion of the base portion 46 is exposed from the substrate W in a plan view, and the remaining portion of the base portion 46 is covered by the substrate W in a plan view. At this time, the support portion 49 of the contact portion 47 is located below the substrate W, and is covered by the substrate W in a plan view. Similarly, the top cover 44 is covered with the substrate W in a plan view.

On the other hand, most of the top surface 47a of the contact portion 47 is located outside the outer edge of the substrate W (the portion indicated by the two-dot chain line in FIG. 3) in plan view, and the remaining portion of the top surface 47a of the contact portion 47 is The part is located inside the outer edge of the substrate W in a plan view. The chuck cover 42 covers the entire area of the top surface 47 a of the contact portion 47 in a plan view. Therefore, the top surface 47a of the contact portion 47 is not exposed in a plan view, so that it cannot be viewed in a plan view. Even if the infrared heater 32 emits light, the light of the infrared heater 32 does not directly hit the top surface 47 a of the contact portion 47.

FIG. 8 is a process diagram for explaining an example of the processing of the substrate W by the substrate processing apparatus 1. The following steps are executed by the control device 3 controlling the substrate processing device 1. In other words, the control device 3 is programmed so as to execute the following steps.

When the substrate W is processed by the processing unit 2, a carrying-in step of carrying the substrate W into the chamber 4 is performed (step S1 in FIG. 8).

Specifically, the control device 3 allows the hand of the transfer robot holding the substrate W to enter the chamber 4 in a state where all the nozzles are retracted from above the rotary chuck 5. Then, the control device 3 mounts the substrate W on the plurality of chuck members 13 by a transfer robot. Then, the control device 3 retracts the hand of the transfer robot from the inside of the chamber 4. Then, the control device 3 moves the movable chuck 13 a from the open position to the closed position after placing the substrate W on the plurality of chuck members 13. Then, the control device 3 causes the rotary motor 16 to start rotating the substrate W.

Next, a first chemical liquid supply step of supplying SPM as an example of the first chemical liquid to the substrate W is performed (step S2 in FIG. 8).

Specifically, the control device 3 controls the first nozzle moving device 21 to move the first chemical liquid nozzle 17 from the retreated position to the processing position. Thereby, the first chemical liquid nozzle 17 is disposed above the substrate W. Then, the control device 3 opens the first chemical liquid valve 19 so that the first chemical liquid nozzle 17 ejects SPM higher than room temperature (for example, 140 ° C.) toward the upper surface of the substrate W in the rotating state. By controlling the first nozzle moving device 21 in this state, the control device 3 moves the liquid contact position of the SPM on the upper surface of the substrate W between the central portion and the outer peripheral portion.

After the SPM sprayed from the first chemical liquid nozzle 17 contacts the upper surface of the substrate W, it flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the SPM is supplied to the entire area of the upper surface of the substrate W, and a liquid film of the SPM covering the entire area of the upper surface of the substrate W is formed on the substrate W. As a result, foreign matter such as a resist film is removed from the substrate W by the SPM. Further, the control device 3 moves the SPM's liquid contact position on the upper surface of the substrate W between the central portion and the outer peripheral portion while the substrate W is rotating, so the SPM liquid contact position passes through the entire area of the upper surface of the substrate W, thereby The entire area of the upper surface of the substrate W is scanned. Therefore, the SPM ejected from the first chemical liquid nozzle 17 is directly supplied to the entire area on the upper surface of the substrate W, so that the entire area on the upper surface of the substrate W is processed uniformly.

Next, a liquid-covering step of holding the liquid film of the SPM on the substrate W in a state where the supply of the SPM to the substrate W is stopped (step S3 in FIG. 8) is performed.

Specifically, the control device 3 controls the rotation chuck 5 to reduce the rotation speed of the substrate W to a level lower than that in the first chemical liquid supply process in a state where the entire area of the upper surface of the substrate W is covered by the SPM liquid film. The substrate W has a low rotation speed (for example, 1 rpm to 30 rpm) with a small rotation speed. Therefore, the centrifugal force of the SPM acting on the substrate W is reduced, and the amount of SPM discharged from the substrate W is reduced. The control device 3 closes the first chemical liquid valve 19 to stop the SPM from being ejected from the first chemical liquid nozzle 17 while the substrate W is rotating at a low rotational speed. Thereby, in a state where the supply of SPM to the substrate W has been stopped, the liquid film of SPM covering the entire area of the upper surface of the substrate W is held on the substrate W. After the control device 3 has stopped supplying the SPM to the substrate W, the first nozzle moving device 21 is controlled, whereby the first chemical liquid nozzle 17 is retracted from above the spin chuck 5.

Next, the heating process of heating the substrate W and the SPM on the substrate W (step S4 in FIG. 8) and the liquid coating process are performed in parallel.

Specifically, the control device 3 causes the infrared heater 32 to start emitting light. Thereby, the temperature (heating temperature) of the infrared heater 32 rises to a temperature higher than the boiling point of the first chemical solution (SPM in this treatment example), and is maintained at this temperature. Then, the control device 3 moves the infrared heater 32 from the retreat position to the processing position by the heater moving device 36. After the control device 3 is arranged above the substrate W with the infrared heater 32, the heater is moved by the heater moving device 36 so that the position of the upper surface of the substrate W irradiated with infrared rays moves from one of the central portion and the outer peripheral portion to the other. The infrared heater 32 moves horizontally. The control device 3 causes the infrared heater 32 to retreat from above the substrate W after the infrared heater 32 has heated the substrate W for a predetermined time. Then, the control device 3 stops the light emission of the infrared heater 32. Light emission and movement of the infrared heater 32 may be started at the same time or may be started at different times.

In this way, while the substrate W is rotated, the irradiation position of the infrared rays on the upper surface of the substrate W is moved from one of the central portion and the outer peripheral portion toward the other, so that the substrate W is uniformly heated. Therefore, the SPM liquid film covering the entire area of the upper surface of the substrate W can be uniformly heated. The heating temperature of the substrate W by the infrared heater 32 is set to a temperature at which the SPM is above the boiling point of the concentration. Therefore, the SPM on the substrate W is heated to the boiling point of the concentration. In particular, when the heating temperature of the substrate W by the infrared heater 32 is set to a temperature higher than the boiling point of the concentration of the SPM, the temperature at the interface between the substrate W and the SPM is maintained at a temperature higher than the boiling point, thereby promoting the self-substrate W Remove foreign matter.

Next, the first chemical liquid discharge step of discharging the SPM on the substrate W is performed (step S5 in FIG. 8).

Specifically, the control device 3 controls the rotary chuck 5 to rotate the substrate W at a rotation speed greater than the rotation speed of the substrate W in the liquid-covering process in a state where the supply of liquid to the substrate W is stopped. Thereby, a larger centrifugal force is applied to the SPM on the substrate W than in the liquid-covering process, and the SPM on the substrate W is dropped toward the periphery of the substrate W. Therefore, almost all the SPM is discharged from the substrate W. Further, the SPM scattered toward the periphery of the substrate W is caught by the cover 8 and guided to the recovery device or the liquid discharge device through the cover 8.

Next, a first eluent supply step of supplying pure water as an example of the eluent to the substrate W is performed (step S6 in FIG. 8).

Specifically, the control device 3 controls the third nozzle moving device 31 to move the eluent nozzle 27 from the retreat position to the processing position. The control device 3 opens the eluent valve 29 after the eluent nozzle 27 is disposed above the substrate W, and causes the eluent nozzle 27 to spray pure water toward the upper surface of the substrate W in a rotating state. Thereby, a liquid film of pure water covering the entire area of the upper surface of the substrate W is formed, and the SPM remaining on the substrate W is washed with pure water. Then, if a predetermined time elapses after the eluent valve 29 is opened, the control device 3 closes the eluent valve 29 to stop the discharge of the pure water. Then, the control device 3 controls the third nozzle moving device 31 to retract the eluent nozzle 27 from above the substrate W.

Next, a second chemical liquid supply step of supplying SC1 as an example of the second chemical liquid to the substrate W is performed (step S7 in FIG. 8).

Specifically, the control device 3 controls the second nozzle moving device 26 to move the second chemical liquid nozzle 22 from the retreated position to the processing position. The control device 3 opens the second chemical liquid valve 24 after the second chemical liquid nozzle 22 is disposed above the substrate W, so that the second chemical liquid nozzle 22 ejects SC1 toward the upper surface of the substrate W in a rotating state. By controlling the second nozzle moving device 26 in this state, the control device 3 moves the liquid contact position of the SC1 on the upper surface of the substrate W between the central portion and the outer peripheral portion. Then, if a predetermined time elapses after the second chemical liquid valve 24 is opened, the control device 3 closes the second chemical liquid valve 24 to stop ejecting SC1. Then, the control device 3 controls the second nozzle moving device 26 to retract the second chemical liquid nozzle 22 from above the substrate W.

The SC1 ejected from the second chemical liquid nozzle 22 contacts the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, the pure water on the substrate W is washed away by SC1 and discharged to the periphery of the substrate W. Thereby, the liquid film of pure water on the substrate W is replaced with a liquid film of SC1 covering the entire area on the upper surface of the substrate W. Furthermore, the control device 3 moves the liquid contact position of SC1 on the upper surface of the substrate W between the central portion and the outer peripheral portion while the substrate W is rotating, so the liquid contact position of SC1 passes through the entire area of the upper surface of the substrate W. The entire area of the upper surface of the substrate W can be scanned. Therefore, the SC1 sprayed from the second chemical liquid nozzle 22 is directly sprayed onto the entire area of the upper surface of the substrate W, and the entire area of the upper surface of the substrate W is uniformly processed.

Next, a second eluent supplying step of supplying pure water as an example of the eluent to the substrate W is performed (step S8 in FIG. 8).

Specifically, the control device 3 controls the third nozzle moving device 31 to move the eluent nozzle 27 from the retreat position to the processing position. The control device 3 opens the eluent valve 29 after the eluent nozzle 27 is disposed above the substrate W, and causes the eluent nozzle 27 to spray pure water toward the upper surface of the substrate W in a rotating state. Thereby, SC1 on the substrate W is washed away by pure water and discharged to the periphery of the substrate W. Therefore, the liquid film of SC1 on the substrate W is replaced with a liquid film of pure water covering the entire area of the upper surface of the substrate W. Then, if a predetermined time elapses after the eluent valve 29 is opened, the control device 3 closes the eluent valve 29 to stop the ejection of pure water. Then, the control device 3 controls the third nozzle moving device 31 to retract the eluent nozzle 27 from above the substrate W.

Next, a drying step of drying the substrate W is performed (step S9 in FIG. 8).

Specifically, the control device 3 causes the spin chuck 5 to accelerate the rotation of the substrate W at a higher rotation speed (for example, thousands of rpm) than the rotation speed from the first chemical liquid supply step to the second eluent liquid supply step. The substrate W is rotated. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhered to the substrate W is dropped around the substrate W. In this manner, the liquid is removed from the substrate W, and the substrate W is dried. Then, if a predetermined time elapses after the high-speed rotation of the substrate W is started, the control device 3 stops the rotation of the substrate W by the spin chuck 5 by controlling the rotation motor 16.

Next, the carrying-out process of carrying out the board | substrate W from the chamber 4 is performed (step S10 of FIG. 8).

Specifically, the control device moves each movable chuck 13 a from the closed position to the open position, and releases the holding of the substrate W by the rotary chuck 5. Then, the control device 3 allows the hand of the transfer robot to enter the chamber 4 in a state where all the nozzles are retracted from above the rotary chuck 5. Then, the control device 3 holds the substrate W on the spin chuck 5 by the hand of the transfer robot. Then, the control device 3 retracts the hand of the transfer robot from the inside of the chamber 4. Thereby, the processed substrate W is carried out from the chamber 4.

As described above, in this embodiment, the contact portion 47 pressed on the outer peripheral portion of the substrate W is provided on the conductive member 41 of the chuck member 13. The contact portion 47 is covered by the chuck cover 42 in a plan view. Therefore, the contact portion 47 can be protected from the heat of the infrared heater 32. Furthermore, part or all of the base portion 46 provided on the conductive member 41 is not covered by the chuck cover 42 in a plan view, and therefore, compared with a case where most of the base portion 46 is covered by the chuck cover 42, It is possible to reduce the processing liquid remaining between the conductive member 41 and the chuck cover 42. Further, the base portion 46 is disposed below the substrate W, and is spaced downward from the infrared heater 32 disposed above the substrate W. Therefore, even if the base portion 46 is not covered by the chuck cover 42, the base portion 46 is less susceptible to heat than the contact portion 47 protruding upward from the upper surface 46 a of the base portion 46. Thereby, while preventing deformation of the conductive member 41 due to temperature rise, it is possible to reduce particles caused by the residual processing liquid.

In this embodiment, the entire area of the top surface 47 a of the contact portion 47 is covered by the chuck cover 42 in a plan view. The top surface 47 a of the contact portion 47 is the uppermost portion of the conductive member 41 and is closest to the infrared heater 32. Therefore, by covering the entire area of the top surface 47 a of the contact portion 47 with the chuck cover 42, deformation of the conductive member 41 due to temperature rise can be effectively prevented.

In the present embodiment, a gap G1 is formed between the lower surface 65d of the cover portion 65 and the top surface 47a of the contact portion 47. The distance in the vertical direction from the top surface 47a of the contact portion 47 to the lower surface 65d of the cover portion 65 (that is, the height of the gap G1) is higher than the height of a droplet or a liquid film formed on the top surface 47a of the contact portion 47 Big. If the gap G1 is very narrow, the liquid cannot be easily discharged from between the lower surface 65 d of the cover portion 65 and the top surface 47 a of the contact portion 47. Therefore, by providing a gap G1 of a size between which the liquid 65 can flow smoothly between the lower surface 65d of the cover portion 65 and the top surface 47a of the contact portion 47, the processing liquid remaining between the two can be reduced.

In this embodiment, by providing the cover portion 65 and the insertion shaft 66 on the chuck cover 42, liquid residues can be reduced, and the chuck cover 42 can be attached to the conductive member 41 without using a fastening member. Specifically, the insertion shaft 66 of the chuck cover 42 is inserted into an insertion hole 68 opened in the top surface 47 a of the contact portion 47. Thereby, the chuck cover 42 is attached to the conductive member 41, and the cover portion 65 of the chuck cover 42 is disposed above the top surface 47a of the contact portion 47. In this way, the chuck cover 42 can be attached to the conductive member 41 by a simple operation of inserting the insertion shaft 66 of the chuck cover 42 into the insertion hole 68 of the conductive member 41.

In the present embodiment, if the insertion shaft 66 of the chuck cover 42 is inserted into the insertion hole 68 of the conductive member 41 and the chuck cover 42 is arranged at a predetermined installation position, it protrudes from the outer peripheral surface 66a of the insertion shaft 66. The hook portion 67 is inserted into a hook insertion hole recessed from the inner peripheral surface 68 a of the insertion hole 68. Movement of the insertion shaft 66 with respect to the insertion hole 68 in the axial direction (up-down direction) is restricted by the contact between the outer surface of the hook portion 67 and the inner surface of the hook insertion hole. Therefore, the chuck cover 42 can be reliably prevented from being detached from the conductive member 41.

In this embodiment, part or all of the top surface 47a of the contact portion 47 is covered by the chuck cover 42 in a plan view. Thereby, the portion of the conductive member 41 closest to the infrared heater 32 can be effectively protected. Further, the chuck cover 42 is miniaturized so that part or all of the outer edge of the chuck cover 42 overlaps the outer edge of the top surface 47 a of the contact portion 47 in a plan view. Therefore, the top surface 47 a of the contact portion 47 can be effectively protected and the chuck cover 42 can be prevented from increasing in size.

(Other embodiments)

The present invention is not limited to the contents of the foregoing embodiments, and various changes can be made within the scope of the present invention.

For example, in the foregoing embodiment, the case where the chuck cover 42 covers the entire area of the top surface 47a of the contact portion 47 in a plan view has been described, but a portion of the top surface 47a of the contact portion 47 may be self-clamped in a plan view. The disk cover 42 is exposed.

In the foregoing embodiment, the case where the lower surface 65d of the cover portion 65 is spaced upward from the top surface 47a of the contact portion 47 and a gap G1 is formed between the conductive member 41 and the chuck cover 42 has been described. The lower surface 65 d of the cover portion 65 may also be in contact with the top surface 47 a of the contact portion 47.

In the foregoing embodiment, the case where the chuck cover 42 is attached to the conductive member 41 by inserting the insertion hole 68 into the insertion hole 68 has been described, but the clip may be attached without using the insertion shaft 66 and the insertion hole 68. The disk cover 42 is attached to the conductive member 41. The hook portion 67 may be omitted from the chuck cover 42. In order to prevent liquid from entering the insertion hole 68, the insertion shaft 66 may be pressed into the insertion hole 68.

In the foregoing embodiment, the case where the outer edge 65o of the cover portion 65 of the chuck cover 42 overlaps with the outer edge of the top surface 47a of the contact portion 47 at any position in a plan view has been described, as shown in FIG. 9 The outer peripheral portion of the cover portion 65 may also protrude from the outer edge of the top surface 47 a of the contact portion 47. In this case, the cover portion 65 may protrude from the outer edge of the top surface 47 a of the contact portion 47 across its entire circumference, or only a part of the cover portion 65 may protrude from the outer edge of the top surface 47 a of the contact portion 47.

9 shows that the front portion of the outer edge 650 of the cover portion 65 overlaps the outer edge of the top surface 47a of the contact portion 47, and the rear portion and the side portions of the outer edge 65o of the cover portion 65 protrude from the outer edge of the top surface 47a of the contact portion 47. example. The rear portion and the side portion of the cover portion 65 overlap the base portion 46 and cover a portion of the base portion 46 in a plan view. With this configuration, since the eaves portion 71 protruding from the outer edge of the top surface 47a of the contact portion 47 is provided on the chuck cover 42, a part of the conductive member 41 other than the top surface 47a is protected by the eaves portion 71 of the chuck cover 42 It is not affected by the infrared heater 32. Accordingly, the conductive member 41 can be more reliably protected from being affected by the infrared heater 32.

In the foregoing embodiment, the case where the heat source of at least one of the heating substrate W and the processing liquid is the infrared heater 32 including the infrared lamp 33 has been described, but it may also include a heating wire that generates heat by being energized. Resistance heaters, or blowers that blow hot air at temperatures above room temperature, are used as heat sources.

In the foregoing embodiment, the case where the drying process is performed while the light emission of the infrared heater 32 is stopped has been described. However, the control device 3 may heat the substrate W and the substrate W on the substrate W and the substrate W in parallel with the drying process. Of liquid. In this case, the control device 3 can move the infrared heater 32 such that the irradiation position of the light on the upper surface of the substrate W is within the upper surface of the substrate W, and the infrared heater 32 can be moved while the infrared heater 32 is stationary. The heater 32 emits light. In either case, the evaporation of the liquid is promoted by the heating of the substrate W and the liquid, so that the time until the substrate W is dried can be shortened.

In the foregoing embodiment, the case where the first chemical liquid nozzle 17, the second chemical liquid nozzle 22, and the eluent liquid nozzle 27 are mounted on each arm has been described. The first chemical liquid nozzle 17, the second chemical liquid nozzle 22, and Two or more of the eluent nozzles 27 may be mounted on a common arm. The infrared heater 32 may also be mounted on an arm that holds at least one of the first chemical liquid nozzle 17, the second chemical liquid nozzle 22, and the eluent liquid nozzle 27.

In the foregoing embodiment, the case where the liquid coating step of holding the liquid film of the SPM on the substrate W and the first chemical liquid discharging step of discharging the SPM on the substrate W have been described, but the liquid coating step may be omitted. And one or both of the first chemical liquid discharge steps. When the liquid covering step is omitted, the heating step of heating the substrate W and the liquid by the infrared heater 32 is performed in parallel with the first chemical liquid supplying step.

In the foregoing embodiment, the case where the movable chuck 13a rotates around the vertical chuck rotation axis A2 has been described, but the movement of the movable chuck 13a is not limited to the rotation around the lead line, but may be the rotation around the horizontal line It can also move in a straight line.

In the foregoing embodiment, the case where the substrate processing device 1 is a device for processing a disc-shaped substrate has been described, but the substrate processing device 1 may be a device for processing a polygonal substrate such as a substrate for a liquid crystal display device.

It is also possible to combine two or more of all the aforementioned constitutions. It is also possible to combine more than two of all the aforementioned steps.

This application corresponds to Japanese Patent Application No. 2016-150012 filed with the Japan Patent Office on July 29, 2016, and the entire disclosure of this application is incorporated herein by reference.

Although the embodiments of the present invention have been described in detail, these are merely specific examples for expressing the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples. The spirit and scope of the present invention are only Limited by the scope of the accompanying patent application.

Claims (7)

A substrate processing apparatus includes: a plurality of chuck members, which are held in a horizontal posture by holding the substrate horizontally; and a processing liquid supply means for supplying the processing liquid to the substrate held by the plurality of chuck members; The heat source is disposed above the substrate held by the plurality of chuck members; and the chuck opening and closing mechanism switches the plurality of chuck members between a closed state and an open state, and the closed state is the plurality of chuck members. A state in which it is pressed on the outer periphery of the substrate, and the open state is a state in which the plurality of chuck members are pressed against the substrate; at least one of the plurality of chuck members includes: a conductive member, at least a part of which is made of carbon-containing It is made of material and includes: a base portion disposed below the substrate; and a contact portion protruding upward from the upper surface of the base portion and pressed against an outer peripheral portion of the substrate from an outer side of the substrate; and a chuck cover , Installed on the conductive member, and does not cover at least a part of the base portion but covers it in a plan view Said contact portion. The substrate processing apparatus according to claim 1, wherein the chuck cover covers an entire area of a top surface of the contact portion located above the conductive member in a plan view. The substrate processing apparatus according to claim 1, wherein the chuck cover includes a cover portion, and the cover portion is disposed above a top surface of the conductive portion located above the contact portion and below the cover portion. A gap is formed between the surface and the top surface of the contact portion for liquid to pass through. The substrate processing apparatus according to any one of claims 1 to 3, wherein the chuck cover covers a top surface of the contact portion located above the conductive member in a plan view; an outer edge of the chuck cover At least a portion thereof overlaps the outer edge of the top surface of the contact portion in a plan view. The substrate processing apparatus according to any one of claims 1 to 3, wherein the chuck cover covers a top surface of the contact portion located at an uppermost portion of the conductive member in a plan view from the top of the contact portion. The outer edge of the face protrudes. A substrate processing apparatus includes: a plurality of chuck members, which are held in a horizontal posture by holding the substrate horizontally; and a processing liquid supply means for supplying the processing liquid to the substrate held by the plurality of chuck members; The heat source is disposed above the substrate held by the plurality of chuck members; and the chuck opening and closing mechanism switches the plurality of chuck members between a closed state and an open state, and the closed state is the plurality of chuck members. A state in which it is pressed on the outer periphery of the substrate, and the open state is a state in which the plurality of chuck members are pressed against the substrate; at least one of the plurality of chuck members includes: a conductive member, at least a part of which is made of carbon-containing It is formed of material and includes: a base portion disposed below the substrate; and a contact portion protruding upward from the upper surface of the base portion and pressed against an outer peripheral portion of the substrate; and a chuck cover mounted on the conductive substrate. The flexible member does not cover at least a part of the base portion but covers the contact portion in a plan view; The tray cover comprises: a cover portion disposed on the conductive member positioned above the top surface of the upper most portion of the contact; and an insertion shaft inserted into the insertion hole formed in the top portion of the contact surface of the opening. The substrate processing apparatus according to claim 6, wherein the chuck cover further includes a hook portion protruding from an outer peripheral surface of the insertion shaft; and the hook portion is inserted into a hook insertion hole recessed from an inner peripheral surface of the insertion hole. .