JP6008384B2 - Substrate processing equipment - Google Patents

Description

This invention relates to a substrate processing apparatus of facilities Sutame treatment using a chemical solution to the substrate. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, Substrates such as a photomask substrate, a ceramic substrate, and a solar cell substrate are included.

In the manufacturing process of a semiconductor device or a liquid crystal display device, for example, a sulfuric acid / hydrogen peroxide mixture (hereinafter, “SPM solution”) is applied to a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. And the like, a process using various chemicals such as a resist stripping process for stripping (removing) the resist from the main surface of the substrate is performed.
For this chemical processing, a single-wafer type substrate processing apparatus that performs processing one by one on a substrate may be used. A single wafer type substrate processing apparatus supplies a chemical solution to a substrate, a substrate rotating mechanism for rotating the substrate rotating in a processing chamber partitioned by a partition, a substrate rotating mechanism that houses the substrate rotating mechanism, and a bottomed cylindrical cup. And a DIW nozzle for supplying DIW (deionized water) to the substrate.

  During the chemical solution processing, the chemical solution is supplied from the chemical solution nozzle to the main surface of the substrate while the substrate is rotated by the substrate rotation mechanism. The chemical solution on the main surface of the substrate spreads over the entire main surface of the substrate under the centrifugal force generated by the rotation of the substrate. Since the substrate rotation mechanism is accommodated in the cup, the chemical liquid flowing down from the substrate when the chemical liquid is supplied is received by the cup and is prevented from scattering outside the cup. After the supply of the chemical solution is stopped, DIW is supplied from the DIW nozzle to the main surface of the substrate, and the chemical solution adhering to the substrate is washed away with DIW. After the supply of DIW is stopped, DIW attached to the substrate is shaken off and removed by high-speed rotation of the substrate. Thereby, a board | substrate dries and a series of chemical | medical solution processes are complete | finished.

JP 2005-93926 A

The inventors of the present invention are considering heating the chemical solution supplied to the main surface of the substrate during the chemical solution processing in order to further increase the temperature of the chemical solution supplied to the main surface of the substrate. Specifically, it is considered to heat the chemical solution present on the main surface of the substrate by using an infrared lamp that is disposed to face the main surface of the substrate with a space therebetween.
However, there is a possibility that a large amount of chemical mist is generated around the main surface of the substrate due to the rapid heating of the chemical by the infrared lamp. For this reason, the atmosphere containing the chemical mist may leak into the processing chamber (outside the cup) through the opening on the upper surface of the cup. As a result, the chemical mist leaking out of the cup may adhere to the main surface of the substrate in the step of drying the substrate, thereby causing contamination of the main surface of the substrate.

In order to prevent the atmosphere containing the chemical mist from flowing out into the processing chamber, an exhaust port for exhausting the atmosphere in the cup may be provided in the cup to exhaust the atmosphere in the cup. When a large amount of chemical mist is generated in the vicinity, there is a possibility that the outflow of the atmosphere containing the chemical mist into the processing chamber cannot be reliably prevented.
Therefore, an object of the present invention is to allow the atmosphere containing the chemical mist to diffuse from the periphery of the main surface of the substrate to the surroundings even when the chemical solution existing on the main surface of the substrate is heated using an infrared lamp. It is an object of the present invention to provide a substrate processing apparatus that can prevent this.

The invention of claim 1, wherein for the purposes of supplies board (W) and a substrate holding means for holding (3), the chemical on the main surface of the substrate held by the substrate holding means A chemical solution supply means (4), an infrared lamp (3 8 ) that emits infrared rays to heat the chemical solution supplied to the main surface of the substrate, a facing surface (100B) facing the main surface of the substrate, and A quartz heater housing (40, 90, 100) having a lamp housing space (inside the lamp housing 40) for housing the infrared lamp, and the opposed surface in a direction intersecting the main surface of the substrate in the heater housing. said annular gas outlet port for discharging gas radially disposed between the infrared lamp (101; 151) and a heater head having an (35; 135 235), subjected to the gas discharge port A flow passage through which a gas to be circulated, the flow passage being inserted into the lamp housing space without being communicated with the interior of the lamp housing space, and a first gas for supplying the gas to the flow passage A substrate processing apparatus (1; 1A; 1B) comprising supply means (91, 92) .

In addition, although the alphanumeric characters in parentheses represent corresponding components in the embodiments described later, the scope of the claims is not intended to be limited to the embodiments. The same applies hereinafter.
According to this configuration, infrared rays are radiated from the infrared lamp while the infrared lamp is disposed opposite to the main surface of the substrate. Therefore, the chemical solution present in the region facing the infrared lamp is heated on the main surface of the substrate. Thereby, a chemical | medical solution can be made still higher temperature.

Further, the gas is discharged radially from the annular gas discharge port along the main surface of the substrate. Thereby, a gas curtain is formed at a position facing the main surface of the substrate. The space inside the gas curtain including the space for accommodating the substrate holding means and the space outside the gas curtain are blocked by the gas curtain.
In some cases, the chemical liquid existing on the main surface of the substrate is heated rapidly, and the chemical liquid is rapidly heated to generate a large amount of chemical mist around the main surface of the substrate.

  However, since the space inside and outside the gas curtain is blocked by the gas curtain formed by the gas discharged from the annular gas discharge port, the atmosphere containing the chemical mist can be confined inside the gas curtain. The atmosphere can be prevented from diffusing from the periphery of the main surface of the substrate to the surroundings (the space outside the gas curtain). Thereby, contamination in the processing chamber can be prevented.

Further, since the gas discharge port and the infrared lamp are integrally held, it is possible to arrange the gas discharge port and the infrared lamp close to each other. Thereby, the atmosphere containing chemical | medical solution mist can be efficiently confined inside a gas curtain.
As described in claim 2, wherein the opposing surface has a smaller diameter than the main surface of the substrate, a heater head moving means (36 for moving the heater head along said main surface of the front Kimoto plate , 37) may further have Nde including the.

According to this configuration, the heater head is moved along the main surface of the substrate in parallel with the heating by the infrared lamp and the discharge of the gas from the gas discharge port. Since the region facing the infrared lamp on the main surface of the substrate moves on a predetermined locus, the entire area of the main surface of the substrate can be heated by the infrared lamp.
Further, accompanying the movement of the infrared lamp, the gas discharge port also moves along the main surface of the substrate. Therefore, since the gas discharge port and the infrared lamp can be kept close to each other at all times, the atmosphere containing the chemical mist can be efficiently confined inside the gas curtain regardless of the position of the heater head.

Further, the ejection direction of the gas from the gas ejection port, the moving direction of the heater head is consistent, even in any position the heater head, a gas curtain having a certain manner. Thereby, the atmosphere around the substrate can be blocked from the internal space of the processing chamber regardless of the position of the heater head.
According to a third aspect of the present invention, there is provided a cup (5) which accommodates the substrate holding means and has an opening (73) of a size capable of passing through the substrate at a position facing the main surface of the substrate held by the substrate holding means. further comprising a said gas ejection port is disposed within said opening, said gas ejection port ejects said gas towards the open end of the cup, which is a substrate processing apparatus according to claim 1 or 2.

  In the cup, an opening having a size capable of passing through the substrate is formed at a position facing the main surface of the substrate held by the substrate holding means. Accordingly, the substrate can be carried into and out of the cup through the opening. On the other hand, since the opening is formed, the inner space and the outer space of the cup communicate with each other through the opening, so that the atmosphere can be circulated in the spaces.

  According to this configuration, gas is discharged along the opening of the cup from the gas discharge port located in the opening toward the opening end of the cup. Thereby, a gas curtain that closes the opening of the cup is formed. Therefore, the atmosphere in the cup can be confined inside the gas curtain, and the atmosphere can be prevented from flowing out of the cup. Thereby, it is possible to prevent the atmosphere containing the chemical mist generated in the cup from flowing into the processing chamber.

The second gas supply means for supplying a cooling gas to the infrared lamp through a predetermined path (60, 61, 62, 63, 64) that does not pass through the flow passage. Further, it may be included.
According to a fifth aspect of the present invention, the flow passage has a gas flow pipe (90; 191) through which the gas to be supplied to the gas discharge port passes through the inside of the housing space , and the gas flow The pipe has discharge holes (95; 195; 295) penetrating through the pipe wall supplied to the gas discharge port in the thickness direction, and the heater housing flows from the discharge hole through the gas flow pipe. the discharged gas, the rectifying plate (52) and the lower rectifying plate on which rectifies the air flow along the main surface of the substrate held by the substrate holding unit; see contains the (100 150), the flow passage, the the airflow rectified by the pair of flow plates has a rectifying space supplied to the gas discharge port, a substrate processing apparatus according to any one of claims 1-4.

According to this configuration, the gas supplied to the gas circulation pipe flows through the gas circulation pipe and is discharged from the discharge hole. Then, the gas discharged from the discharge holes is supplied to the gas discharge port while being rectified by a pair of rectifying plates into an airflow flowing radially along the main surface of the substrate. Thereby, gas can be discharged radially from the gas discharge port along the main surface of the substrate.
As described in claim 6, wherein the discharge hole has a plurality of individual discharge holes spaced the entire circumference intervals in the circumferential direction over the gas distribution piping; have a (95 195) Good.

Moreover, as described in claim 7 , the discharge hole (295) may be formed in an annular shape along a circumferential direction of the gas flow pipe.
Further, as described in claim 8 , the infrared lamp has an annular shape surrounding the periphery of the gas circulation pipe, and the wall of the gas circulation pipe is heated by infrared irradiation by the infrared lamp. heating the gas flowing through the gas flow pipe, a substrate processing apparatus according to any one of claims 5-7.

  According to this configuration, the gas is heated in the process of flowing through the gas flow pipe, and the gas having a high temperature can be discharged from the discharge hole. Therefore, the gas curtain can be raised to a high temperature. Thereby, it is possible to prevent or suppress the cooling of the chemical solution existing on the main surface of the substrate held by the substrate holding means, and as a result, it is possible to keep the temperature of the chemical solution existing on the main surface of the substrate. .

Further, as described in claim 9 wall of the gas flow pipe may be formed integrally with the heater Haujin grayed.
In addition, as described in claim 10, the lower rectifying plate may be supported by the gas flow pipe.

The invention according to claim 11 further includes a suction pipe (192) having a suction port (194) and inserted into the gas circulation pipe, and a suction means for sucking the inside of the suction pipe. The pipe and the suction pipe form a double pipe structure by inserting the suction pipe into the gas flow pipe, and the tip of the suction pipe opens through the lower rectifying plate. The substrate processing apparatus according to claim 5 , wherein the suction port is formed.

According to this configuration, when the lower surface of the lower rectifying plate is disposed so as to oppose the main surface of the substrate, the suction port also opposes the main surface of the substrate. When the inside of the suction port is sucked in this state, the atmosphere between the lower surface of the lower rectifying plate and the main surface of the substrate is sucked, and the space between the lower surface of the lower rectifying plate and the main surface of the substrate is negative pressure. become.
When a chemical solution existing on the main surface of the substrate is heated using an infrared lamp arranged opposite to the main surface, the chemical solution is heated rapidly, and thus there is a possibility that a large convection occurs around the main surface of the substrate. . As this convection increases, the amount of heat escaping from the chemical solution present on the main surface of the substrate increases, and this may cause the chemical solution present on the main surface of the substrate to be cooled.

  According to the eleventh aspect, since the space between the lower surface of the lower rectifying plate and the main surface of the substrate becomes negative pressure, large convection occurs in the space between the lower surface of the lower rectifying plate and the main surface of the substrate. Can be suppressed. Thereby, since the amount of heat lost by the convection can be suppressed, cooling of the chemical existing on the main surface of the substrate can be suppressed or prevented, and thereby the temperature of the chemical existing on the main surface of the substrate can be kept warm. be able to.

Further, the atmosphere containing the chemical mist can be sucked and exhausted from the space between the lower rectifying plate and the main surface of the substrate by the suction of the suction port. Therefore, the chemical | medical solution mistake which exists in the main surface periphery of a chemical | medical solution can be reduced, and, thereby, it can suppress more effectively that the atmosphere containing a chemical | medical solution mist spread | diffuses in a process chamber.
In addition, as described in claim 12, the chemical solution may be a resist stripping solution.

  In this case, since the resist stripping solution present on the main surface of the substrate can be warmed in the vicinity of the boundary with the main surface of the substrate, the reaction between the resist on the main surface of the substrate and the resist stripping solution can be promoted. . Therefore, the resist can be satisfactorily removed from the entire main surface of the substrate, and even a resist having a hardened layer can be removed from the main surface of the substrate without ashing. Since resist ashing is unnecessary, the problem of damage to the main surface of the substrate due to ashing can be avoided.

It is a figure which shows typically the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. FIG. 2 is a schematic sectional view of the heater head shown in FIG. 1. It is the figure seen from the cut surface line III-III shown in FIG. It is a perspective view of the infrared lamp shown in FIG. It is a perspective view of the heater arm shown in FIG. It is a block diagram which shows the electric constitution of the substrate processing apparatus shown in FIG. FIG. 3 is a process diagram illustrating a processing example of resist removal processing in the substrate processing apparatus illustrated in FIG. 1. It is a time chart for demonstrating the control content by the control apparatus in the main processes of the example of a process shown in FIG. FIG. 8 is an illustrative cross-sectional view for explaining a step in the processing example shown in FIG. 7. FIG. 9B is an illustrative sectional view showing a step subsequent to FIG. 9A. It is a top view which shows the movement range of the heater head in a SPM liquid film heating process. It is a figure which shows the gas curtain formed with the nitrogen gas discharged from an inert gas discharge port. It is a figure which shows typically the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. It is a figure which shows typically the structure of the substrate processing apparatus which concerns on 3rd Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. For example, the substrate processing apparatus 1 removes unnecessary resist from the surface of the wafer W after ion implantation processing or dry etching processing for injecting impurities into the surface (main surface) of the wafer W as an example of a substrate. It is a single wafer type device used for processing.

  The substrate processing apparatus 1 includes a processing chamber 2 partitioned by a partition wall 2A. A fan filter unit (not shown) for sending clean air (air generated by purifying air in the clean room in which the substrate processing apparatus 1 is installed) into the processing chamber 2 on the ceiling wall of the processing chamber 2 Is provided. On the other hand, an exhaust port (not shown) is formed on the bottom surface of the processing chamber 2. By supplying clean air from the fan filter unit and exhausting from the exhaust port, a clean air downflow is always formed in the processing chamber 2 while the substrate processing apparatus 1 is in operation.

The substrate processing apparatus 1 has a wafer rotation mechanism (substrate holding means) 3 for holding and rotating the wafer W in the processing chamber 2, and the surface (upper surface) of the wafer W held by the wafer rotation mechanism 3. The wafer is disposed opposite to the surface of the wafer W held in the wafer rotation mechanism 3 and a peeling liquid nozzle (chemical liquid supply means) 4 for supplying an SPM liquid as an example of a resist stripping liquid as a chemical liquid. and a Hitahe' de 35 for heating the W SPM liquid on the surface of the.

  As the wafer rotation mechanism 3, for example, a sandwiching type is adopted. Specifically, the wafer rotation mechanism 3 includes a motor 6, a spin shaft 7 integrated with a drive shaft of the motor 6, and a disk-shaped spin base 8 attached to the upper end of the spin shaft 7 substantially horizontally. And a plurality of clamping members 9 provided at substantially equal angular intervals at a plurality of locations on the peripheral portion of the spin base 8. The plurality of clamping members 9 clamp the wafer W in a substantially horizontal posture. When the motor 6 is driven in this state, the spin base 8 is rotated around a predetermined rotation axis (vertical axis) C by the driving force, and the wafer W is maintained in a substantially horizontal posture together with the spin base 8. It is rotated around the vertical rotation axis C in the state.

The wafer rotating mechanism 3 is not limited to the clamping type, and for example, the wafer W is held in a horizontal posture by vacuum suction on the back surface of the wafer W, and further rotated around the rotation axis C in that state. By doing so, a vacuum suction type of rotating the wafer W held by the wafer rotating mechanism 3 may be adopted.
The wafer rotation mechanism 3 is accommodated in the cup 5. The cup 5 includes a cup lower part 5A and a cup upper part 5B provided so as to be movable up and down above the cup lower part 5A.

The cup lower portion 5 </ b> A has a bottomed cylindrical shape whose center axis coincides with the rotation axis C of the wafer W. An exhaust port (not shown) is formed on the bottom surface of the cup lower portion 5A, and the atmosphere in the cup 5 is always exhausted from the exhaust port while the substrate processing apparatus 1 is in operation.
The cup upper portion 5B includes a cylindrical cylindrical portion 71 having a central axis common to the cup lower portion 5A, and an inclined portion 72 that inclines so as to increase from the upper end of the cylindrical portion 71 toward the central axis of the cylindrical portion 71. Integrated. A cup raising / lowering mechanism (not shown) for raising and lowering (up and down movement) the cup upper portion 5B is coupled to the cup upper portion 5B. By the cup lifting mechanism, the cup upper portion 5 </ b> B is moved to a position where the cylindrical portion 71 is disposed on the side of the spin base 8 and a position where the upper end of the inclined portion 72 is disposed below the spin base 8.

A circular opening 73 surrounded by the upper edge of the inclined portion 72 is formed on the upper surface of the cup upper portion 5B. The opening 73 has a size that allows the spin base 8 to pass therethrough in order to realize the raising and lowering of the cup upper portion 5B, and naturally has a size that allows the wafer W to pass.
The stripping liquid nozzle 4 is, for example, a straight nozzle that discharges the SPM liquid in a continuous flow state. The stripping liquid nozzle 4 is attached to the tip of the first liquid arm 11 extending substantially horizontally with its discharge port directed downward. The first liquid arm 11 is provided so as to be rotatable around a predetermined swing axis extending in the vertical direction. The first liquid arm 11 is coupled to a first liquid arm swinging mechanism 12 for swinging the first liquid arm 11 within a predetermined angle range. As the first liquid arm 11 swings, the stripping liquid nozzle 4 moves to a position on the rotation axis C of the wafer W (position facing the rotation center of the wafer W) and a home set on the side of the wafer rotation mechanism 3. Moved between positions.

A stripping solution supply pipe 15 to which an SPM solution from an SPM supply source is supplied is connected to the stripping solution nozzle 4. In the middle of the stripping solution supply pipe 15, a stripping solution valve 23 for switching supply / stop of supply of the SPM solution from the stripping solution nozzle 4 is interposed.
The substrate processing apparatus 1 also applies a DIW nozzle 24 for supplying DIW as a rinsing liquid to the surface of the wafer W held by the wafer rotation mechanism 3 and the surface of the wafer W held by the wafer rotation mechanism 3. And an SC1 nozzle 25 for supplying SC1 (ammonia-hydrogen peroxide mixture) as a chemical solution for cleaning.

  The DIW nozzle 24 is, for example, a straight nozzle that discharges DIW in a continuous flow state. The DIW nozzle 24 is fixedly disposed above the wafer rotation mechanism 3 with its discharge port directed toward the vicinity of the rotation center of the wafer W. A DIW supply pipe 26 to which DIW is supplied from a DIW supply source is connected to the DIW nozzle 24. A DIW valve 27 for switching supply / stop of supply of DIW from the DIW nozzle 24 is interposed in the middle of the DIW supply pipe 26.

  The SC1 nozzle 25 is, for example, a straight nozzle that discharges SC1 in a continuous flow state. The SC1 nozzle 25 is attached to the tip of the second liquid arm 28 that extends substantially horizontally with its discharge port directed downward. The second liquid arm 28 is provided so as to be rotatable around a predetermined swing axis extending in the vertical direction. The second liquid arm 28 is coupled to a second liquid arm swing mechanism 29 for swinging the second liquid arm 28 within a predetermined angle range. As the second liquid arm 28 swings, the SC1 nozzle 25 moves to a position on the rotation axis C of the wafer W (a position facing the rotation center of the wafer W) and a home position set to the side of the wafer rotation mechanism 3. Moved between.

An SC1 supply pipe 30 to which SC1 from an SC1 supply source is supplied is connected to the SC1 nozzle 25. An SC1 valve 31 for switching supply / stop of supply of SC1 from the SC1 nozzle 25 is interposed in the middle of the SC1 supply pipe 30.
A support shaft 33 extending in the vertical direction is disposed on the side of the wafer rotation mechanism 3. A heater arm 34 extending in the horizontal direction is coupled to the upper end portion of the support shaft 33, and a heater head 35 that houses and holds the infrared lamp 38 is attached to the tip of the heater arm 34. Further, the support shaft 33 includes a swing drive mechanism ( heater head moving means) 36 for rotating the support shaft 33 around the central axis, and a lift drive for moving the support shaft 33 up and down along the central axis. A mechanism ( heater head moving means) 37 is coupled.

A driving force is input to the support shaft 33 from the swing drive mechanism 36 and the support shaft 33 is rotated within a predetermined angle range, whereby the heater arm 34 is located above the wafer W held by the wafer rotation mechanism 3. Can be swung with the support shaft 33 as a fulcrum. By the swinging of the heater arm 34, the heater head 35 is moved to a position including the rotation axis C of the wafer W (position facing the rotation center of the wafer W), and a home position set to the side of the wafer rotation mechanism 3. Moved between. Further, by inputting a driving force from the lifting drive mechanism 37 to the support shaft 33 and moving the support shaft 33 up and down, the proximity position close to the surface of the wafer W held by the wafer rotation mechanism 3 (first described later). Between the proximity position and the second proximity position of FIG. 1. A position indicated by a two-dot chain line in FIG. 1) and a retreat position (position indicated by a solid line in FIG. 1) for retreating above the wafer W, The heater head 35 can be raised and lowered. In this embodiment, the proximity position is a position where the distance between the surface of the wafer W held by the wafer rotation mechanism 3 and the lower surface of the heater head 35 (the lower surface (opposing surface) 100B of the lower rectifying plate 100 ) is 3 mm, for example. Is set.

FIG. 2 is a schematic sectional view of the heater head 35. FIG. 3 is a view taken along the section line III-III shown in FIG.
The heater head 35 is a round tubular (cylindrical) inert gas circulation pipe (gas circulation pipe) 90 extending in the vertical direction, and a substantially annular infrared lamp arranged so as to surround the inert gas circulation pipe 90. 38 and a disc-shaped lower rectifying plate 100 attached in a horizontal posture to the tip (lower end) of an inert gas circulation pipe 90 extending in the vertical direction. In other words, the lower rectifying plate 100 is supported by the inert gas circulation pipe 90. The heater head 35 has an opening 39 in the upper part thereof, and has a bottomed cylindrical container-like lamp housing 40 that houses the infrared lamp 38, and a support member 42 that supports the infrared lamp 38 by suspending it inside the lamp housing 40. And a lid 41 for closing the opening 39 of the lamp housing 40. In this embodiment, the lid 41 is fixed to the tip of the heater arm 34. In this embodiment, the inside of the lamp housing 40 functions as a lamp housing space.

The tip (lower end) of the inert gas circulation pipe 90 passes through the bottom plate portion (upper rectifying plate) 52 of the lamp housing 40 and protrudes to the tip side (downward) from the lower surface 52B of the bottom plate portion 52. The current plate 100 is closed. In this embodiment, the inert gas circulation pipe 90, the lamp housing 40, and the lower rectifying plate 100 are integrally formed using quartz which is a transparent material. In this embodiment, the heater housing is configured by the inert gas circulation pipe 90, the lamp housing 40, the lower rectifying plate 100, and the like.

The base end (upper end) of the inert gas circulation pipe 90 extends upward and reaches the outside of the lid 41. An inert gas supply pipe ( first gas supply means) 91 is connected to the base end of the inert gas circulation pipe 90 from the outside of the lid 41. Nitrogen gas is supplied to the inert gas supply pipe 91 from an inert gas supply source. In the middle of the inert gas supply pipe 91, an inert gas valve 92 ( first gas supply means; see FIG. 1) for switching supply / stop of supply of nitrogen gas to the inert gas circulation pipe 90 is interposed. ing.

The lower rectifying plate 100 has a disc shape centered on the central axis of the inert gas flow pipe 90. The lower rectifying plate 100 has substantially the same diameter as the bottom plate portion 52 described below of the lamp housing 40. Each of the upper surface 100A and the lower surface (opposing surface) 100B of the lower rectifying plate 100 forms a horizontal flat surface. A rectifying space is partitioned by the bottom plate portion 52 and the lower rectifying plate 100. Further, the flow passage is defined by the rectifying space and the inside of the inert gas circulation pipe 90.
The bottom plate portion (upper rectifying plate) 52 of the lamp housing 40 has a disc shape centered on the central axis of the inert gas flow pipe 90. Each of the upper surface 52A and the lower surface 52B of the bottom plate portion 52 forms a horizontal flat surface. In other words, the bottom plate portion 52 and the lower rectifying plate 100 have a parallel plate shape in a horizontal posture.

  An annular outward (lateral) inert gas discharge port (gas discharge) is formed by the peripheral edge of the upper surface 100A of the lower rectifying plate 100 and the peripheral edge of the lower surface 52B of the bottom plate portion 52 (the peripheral surface of the lower surface of the lamp housing 40). An exit) 101 is defined. The inert gas discharge port 101 is a discharge port for discharging nitrogen gas radially toward the side along the horizontal direction (the direction along the surface of the wafer W).

  As shown in FIGS. 2 and 3, below the lower surface 52 </ b> B of the bottom plate part 52 in the inert gas circulation pipe 90, in other words, in the tube wall of the inert gas circulation pipe 90, the bottom plate part 52. A plurality of (for example, eight) individual discharge holes 95 are formed through the tube wall in the thickness direction between the lower surface 52B and the upper surface 100A of the lower rectifying plate 100. The plurality of individual discharge holes 95 are disposed at the same position in the flow direction of the inert gas flow pipe 90 and at equal intervals over the entire circumference of the inert gas flow pipe 90. The plurality of individual discharge holes 95 have the same specifications. Each individual discharge hole 95 discharges radially outward of the circular cross section (cross section orthogonal to the flow direction) of the inert gas flow pipe 90 in the individual discharge hole 95.

  The inert gas discharge port 101 and each individual discharge hole 95 communicate with each other. The nitrogen gas supplied to the inert gas circulation pipe 90 is discharged from each individual discharge hole 95 through the inert gas circulation pipe 90. The nitrogen gas discharged from each individual discharge hole 95 is rectified into an airflow flowing radially outward along the horizontal direction by the bottom plate portion 52 and the lower rectifying plate 100 of the lamp housing 40 and is inert gas. It is supplied to the discharge port 101. Thereby, the inert gas discharge port 101 discharges nitrogen gas radially toward the side along the horizontal direction.

In order to uniformly discharge nitrogen gas radially from the inert gas discharge port 101, the number of the individual discharge holes 95 is preferably four or more, and each individual discharge hole 95 is in the circumferential direction or the like. It is desirable to arrange them at intervals.
FIG. 4 is a perspective view of the infrared lamp 38. As shown in FIGS. 2 and 4, the infrared lamp 38 includes an annular (arc-shaped) annular portion 43 and a vertically upward direction from both ends of the annular portion 43 along the central axis of the annular portion 43. 1 is a single infrared lamp heater having a pair of straight line portions 44 and 45, and the annular portion 43 mainly functions as a light emitting portion. In this embodiment, the diameter (outer diameter) of the annular portion 43 is set to about 60 mm, for example. In a state where the infrared lamp 38 is supported by the support member 42, the central axis of the annular portion 43 extends in the vertical direction. In other words, the central axis of the annular portion 43 is an axis perpendicular to the surface of the wafer W held by the wafer rotation mechanism 3. Further, the infrared lamp 38 is disposed substantially in a horizontal plane.

The infrared lamp 38 is configured by arranging a filament in a quartz pipe. An amplifier 54 (see FIG. 6) for supplying voltage is connected to the infrared lamp 38. As the infrared lamp 38, a short, medium and long wavelength infrared heater represented by a halogen lamp and a carbon heater can be adopted.
FIG. 5 is a perspective view of the heater arm 34 and the heater head 35.

  As shown in FIGS. 2 and 5, the lid 41 has a disk shape and is fixed in a horizontal posture with respect to the heater arm 34. The lid 41 is formed using a fluororesin material such as PTFE (polytetrafluoroethylene). In this embodiment, the lid 41 is formed integrally with the heater arm 34. However, the lid 41 may be formed separately from the heater arm 34. In addition to a resin material such as PTFE, a material such as ceramics or quartz can also be used as the material of the lid 41.

As shown in FIG. 2, a groove portion 51 (substantially cylindrical) is formed on the lower surface 49 of the lid 41. The groove 51 has an upper bottom surface 50 formed of a horizontal flat surface, and the upper surface 42A of the support member 42 is fixed to the upper bottom surface 50 in contact therewith. As shown in FIGS. 2 and 5, the lid 41 is formed with insertion holes 58 and 59 that penetrate the upper bottom surface 50 and the lower surface 42B in the vertical direction (vertical direction, the direction intersecting the main surface of the substrate ) . Yes. The insertion holes 58 and 59 are for insertion of the upper ends of the linear portions 44 and 45 of the infrared lamp 38. FIG. 5 shows a configuration in a state where the infrared lamp 38 is removed from the heater head 35.

  The lamp housing 40 is fixed to the lower surface 49 of the lid 41 (the lower surface excluding the groove portion 51 in this embodiment) with the opening 39 facing upward. An annular flange 40A projects radially outward (in the horizontal direction) from the peripheral edge on the opening side of the lamp housing 40. The flange 40A is fixed to the lower surface 49 of the lid 41 using a fixing means (not shown) such as a bolt, so that the lamp housing 40, the inert gas flow pipe 90, and the lower rectifying plate 100 are supported by the lid 41. . In this state, the bottom plate portion 52 of the lamp housing 40 is in the shape of a horizontal disk. Each of the upper surface 52A and the lower surface 52B of the bottom plate portion 52 forms a horizontal flat surface.

  In the lamp housing 40, the infrared lamp 38 is disposed so that the lower portion of the annular portion 43 is close to the upper surface 52 </ b> A of the bottom plate portion 52. The annular portion 43 and the bottom plate portion 52 are provided in parallel to each other. In this embodiment, the outer diameter of the lamp housing 40 is set to about 85 mm, for example. Further, the vertical distance between the infrared lamp 38 (the lower portion of the annular portion 43) and the upper surface 52A is set to about 2 mm, for example.

  The support member 42 has a thick plate shape (substantially disk shape), and is attached and fixed to the lid 41 from below with a bolt 56 and the like in a horizontal posture. The support member 42 is formed using a heat-resistant material (ceramics or quartz). The support member 42 has two insertion holes 46 and 47 that penetrate the upper surface 42A and the lower surface 42B in the vertical direction (vertical direction). The insertion holes 46 and 47 are for the insertion of the straight portions 44 and 45 of the infrared lamp 38.

An O-ring 48 is fitted and fixed to the middle part of each straight part 44, 45. In a state where the straight portions 44 and 45 are inserted through the insertion holes 46 and 47, the outer periphery of each O-ring 48 is in pressure contact with the inner walls of the insertion holes 46 and 47, whereby the insertion holes 46 and 47 of the straight portions 44 and 45 are connected. 47 is achieved, and the infrared lamp 38 is suspended and supported by the support member 42.
As shown in FIG. 2, when a voltage is supplied from the amplifier 54 to the infrared lamp 38, the infrared lamp 38 emits infrared light and is emitted toward the lower side of the heater head 35 through the lamp housing 40.

  Further, the tube wall of the inert gas circulation pipe 90 surrounded by the infrared lamp 38 is heated by the infrared irradiation from the infrared lamp 38. In this state, when nitrogen gas from the inert gas supply pipe 91 is supplied to the inert gas circulation pipe 90, the pipe of the inert gas circulation pipe 90 in the process of flowing the nitrogen gas through the inert gas circulation pipe 90. Heated by the wall. Therefore, the nitrogen gas heated to a high temperature through the inert gas circulation pipe 90 is discharged from the inert gas discharge port 101 through the individual discharge holes 95.

  When the infrared lamp 38 radiates, the temperature of the lamp housing 40, the inert gas circulation pipe 90, and the lower rectifying plate 100 also rises. However, the lamp housing 40, the inert gas circulation pipe 90, and the lower rectifying plate 100 have heat resistance. Since it is formed using quartz, there is almost no risk of its destruction or melting. In addition, since it is made of quartz with excellent infrared transmission, the infrared rays from the infrared lamp 38 are well irradiated below the lower rectifying plate 100 through the lamp housing 40, the lower rectifying plate 100, and the like. Be made.

Further, since the annular portion 43 of the infrared lamp 38 is in a horizontal posture, the irradiation area onto the surface of the wafer W that is also in the horizontal posture can be kept wide, and thereby infrared rays are efficiently irradiated to the SPM liquid. be able to.
In the resist removal process described later, the annular portion 43 of the infrared lamp 38 and the lower surface 100B of the lower rectifying plate 100 are arranged to face the surface of the wafer W held by the wafer rotation mechanism 3. .

Further, an air supply path 60 for supplying air to the inside of the lamp housing 40 and an exhaust path 61 for exhausting the atmosphere inside the lamp housing 40 are formed in the lid 41. The air supply path 60 and the exhaust path 61 have an air supply port 62 and an exhaust port 63 that open on the lower surface of the lid 41. One end of an air supply pipe 64 is connected to the air supply path 60. The other end of the air supply pipe 64 is connected to an air supply source (second gas supply means) . One end of an exhaust pipe 65 is connected to the exhaust path 61. The other end of the exhaust pipe 65 is connected to an exhaust source.

While supplying air into the lamp housing 40 from the air supply port 62 through the air supply pipe 64 and the air supply path 60, the atmosphere in the lamp housing 40 is exhausted to the exhaust pipe 65 through the exhaust port 63 and the exhaust path 61. Thus, the high temperature atmosphere in the lamp housing 40 is ventilated. Thereby, the infrared lamp 38 and the lamp housing 40, especially the support member 42, can be cooled. In this embodiment, gas is supplied to the infrared lamp through a path including the air supply path 60, the exhaust path 61, the air supply port 62, the exhaust port 63, the air supply pipe 64, the inside of the lamp housing 40, and the like.

As shown in FIG. 5, the air supply pipe 64 and the exhaust pipe 65 (not shown in FIG. 5, see FIG. 2) are a plate-like air supply pipe holder disposed on one side surface of the heater arm 34. 66 and a plate-like exhaust pipe holder 67 disposed on the other side surface of the heater arm 34, respectively.
FIG. 6 is a block diagram showing an electrical configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 further includes a control device 55 configured to include a microcomputer. The control device 55 includes a motor 6, an amplifier 54, a swing drive mechanism 36, a lift drive mechanism 37, a first liquid arm swing mechanism 12, a second liquid arm swing mechanism 29, a peeling liquid valve 23, a DIW valve 27, An SC1 valve 31, an inert gas valve 92, and the like are connected as control targets.

  FIG. 7 is a process diagram showing a processing example of resist removal processing in the substrate processing apparatus 1. FIG. 8 is a time chart for explaining the contents of control by the control device 55 in the SPM liquid film forming step and the SPM liquid film heating step described below. 9A and 9B are schematic cross-sectional views for explaining the SPM liquid film forming step and the SPM liquid film heating step. FIG. 10 is a plan view showing the moving range of the heater head 35 in the SPM liquid film heating step.

Hereinafter, an example of the resist removal process will be described with reference to FIGS.
During the resist removal process, a transfer robot (not shown) is controlled, and the wafer W after the ion implantation process is loaded into the processing chamber 2 (see FIG. 1) (step S1: wafer loading). It is assumed that the wafer W has not undergone a process for ashing the resist. The wafer W is delivered to the wafer rotating mechanism 3 with its surface facing upward. At this time, the heater head 35, the stripping solution nozzle 4 and the SC1 nozzle 25 are each arranged at the home position so as not to hinder the loading of the wafer W.

  When the wafer W is held on the wafer rotation mechanism 3, the control device 55 controls the motor 6 to start rotating the wafer W. The rotation speed of the wafer W is increased to the first rotation speed (in the range of 30 to 300 rpm, for example, 60 rpm), and then maintained at the first rotation speed (step S2). The first rotation speed is a speed at which the liquid film of the SPM liquid can be held on the surface of the wafer W. Further, the control device 55 controls the first liquid arm swing mechanism 12 to move the stripping liquid nozzle 4 to a position above the wafer W.

After the rotation speed of the wafer W reaches the first rotation speed, the control device 55 opens the stripping solution valve 23 and supplies the SPM solution from the stripping solution nozzle 4 to the surface of the wafer W as shown in FIG. 9A. .
Since the rotation speed of the wafer W is the first rotation speed, the SPM liquid supplied to the surface of the wafer W is stored on the surface of the wafer W and covers the entire surface of the wafer W. An SPM liquid film (chemical liquid film) 70 is formed (step S3: SPM liquid film forming step).

As shown in FIG. 9A, at the start of the SPM liquid film forming process, the control device 55 controls the first liquid arm swinging mechanism 12 to place the stripping liquid nozzle 4 on the rotation center of the wafer W. Therefore, the liquid film 70 of the SPM liquid can be formed on the surface of the wafer W. Thereby, the entire surface of the wafer W can be covered with the liquid film 70 of the SPM liquid.
Further, in parallel with the SPM liquid film forming process of step S3, the control device 55 controls the amplifier 54 to emit infrared rays from the infrared lamp 38, and controls the swing drive mechanism 36 and the elevation drive mechanism 37. Thus, the heater arm 34 holding the heater head 35 is swung and moved up and down above the wafer W. Specifically, the heater head 35 is moved to a second retracted position on the peripheral edge of the surface of the wafer W, and then the second retracted position is opposed to the peripheral edge of the surface of the wafer W from the second retracted position. To a close position (position indicated by a two-dot chain line in FIG. 10).

  Further, in parallel with the SPM liquid film forming process in step S3, the control device 55 opens the nitrogen gas valve 92. By supplying nitrogen gas to the inert gas circulation pipe 90 (see FIG. 2), nitrogen gas is discharged from the inert gas discharge port 101 of the heater head 35 radially toward the side along the horizontal direction. Is done. Thereby, a gas curtain GC is formed on the side of the heater head 35.

The time required for forming the SPM liquid film 70 covering the entire surface of the wafer W varies depending on the flow rate of the SPM liquid discharged from the stripping liquid nozzle 4, but in the range of 2 to 15 seconds, for example, 5 Seconds.
When the five seconds have elapsed from the start of the supply of the SPM liquid, the control device 55 controls the motor 6 to lower the rotation speed of the wafer W to a predetermined second rotation speed smaller than the first rotation speed. Thereby, the SPM liquid film heating process of step S4 is performed.

  The second rotation speed is a speed at which the SPM liquid film 70 can be held on the surface of the wafer W without supplying the SPM liquid to the wafer W (in the range of 1 to 20 rpm, for example, 15 rpm). Further, in synchronization with the deceleration of the wafer W by the motor 6, as shown in FIG. 9B, the control device 55 closes the stripping liquid valve 23 to stop the supply of the SPM liquid from the stripping liquid nozzle 4, and The one-liquid arm swinging mechanism 12 is controlled to return the stripping liquid nozzle 4 to the home position. Although the supply of the SPM liquid to the wafer W is stopped, the liquid film 70 of the SPM liquid is continuously held on the surface of the wafer W by reducing the rotation speed of the wafer W to the second rotation speed.

  As shown in FIG. 9B, even after the rotation speed of the wafer W is lowered, the heating of the SPM liquid on the surface of the wafer W by the infrared lamp 38 of the heater head 35 is continued (step S4: SPM liquid film heating). Process). The control device 55 controls the amplifier 54 to radiate infrared rays from the infrared lamp 38 and also controls the swing drive mechanism 36 and the elevation drive mechanism 37, and as shown in FIGS. 9B and 10, the heater head 35 is controlled. Are moved back and forth between a first proximity position (a position facing the rotation center of the wafer W; a position indicated by a solid line in FIG. 10) and a second proximity position. The control device 55 keeps the nitrogen gas valve 92 open. Thereby, nitrogen gas is discharged from the inert gas discharge port 101 of the heater head 35 radially toward the side along the horizontal direction. Thereby, the gas curtain GC is formed.

By the infrared irradiation by the infrared lamp 38, the SPM liquid existing in the region facing the infrared lamp 38 on the surface of the wafer W is rapidly heated. Since the infrared irradiation by the infrared lamp 38 is continued intermittently, a large amount of SPM liquid mist is generated around the surface of the wafer W.
FIG. 11 is a view showing a gas curtain GC formed by nitrogen gas discharged from the inert gas discharge port 101.

  In a state where the heater head 35 is in the proximity position, the inert gas discharge port 101 is disposed so as to be located in the opening 73. The nitrogen gas discharged radially from the inert gas discharge port 101 forms a radial airflow film as a whole. Moreover, since nitrogen gas is discharged toward the opening end of the cup 5 from the inert gas discharge port 101 located in the opening 73, the gas curtain GC made of a radial airflow film passes over the entire area of the opening 73 from above. It is formed to close. Therefore, the atmosphere containing the SPM liquid mist in the cup 5 can be confined inside the cup 5, and the atmosphere can be prevented from flowing out of the cup 5, as shown in FIG.

Further, as described above, the heated nitrogen gas is discharged from the inert gas discharge port 101. Therefore, the gas curtain GC heated to high temperature can be formed. Thereby, it is possible to prevent or suppress the cooling of the SPM liquid existing on the surface of the wafer W held by the wafer rotating mechanism 3, and as a result, the SPM liquid on the surface of the wafer W can be kept warm. it can.
Then, as shown in FIG. 10, an arc-shaped trajectory is drawn in a region where the region facing the infrared lamp 38 on the surface of the wafer W extends from the region including the rotation center of the wafer W to the region including the periphery of the wafer W. Move while. As a result, the entire surface of the wafer W can be heated.

  By irradiating with infrared rays from the infrared lamp 38, the liquid film 70 of the SPM liquid can be heated in the vicinity of the boundary with the surface of the wafer W, so that the reaction between the resist on the surface of the wafer W and the SPM liquid is promoted. Can do. The second proximity position is such that when the heater head 35 is viewed from above, the annular portion 43 of the infrared lamp 38 reaches the outer peripheral edge of the wafer W or projects radially outward from the outer peripheral edge. It is a position.

  Further, as described above, when the heater head 35 is in the close position, the space between the lower surface 100B of the lower rectifying plate 100 and the surface of the wafer W is kept at a minute distance (for example, 3 mm). Therefore, the atmosphere between the lower surface 100B and the surface of the wafer W can be blocked from the surroundings, and the atmosphere can be kept warm. Thereby, since the temperature drop of the SPM liquid existing in the region facing the lower surface 100B on the surface of the wafer W can be suppressed, the temperature of the SPM liquid existing in the region facing the lower surface 100B can be further increased. Can do.

In the SPM liquid film heating process of step S4, the liquid film 70 of the SPM liquid is heated near the boundary with the surface of the wafer W. As a result, the reaction between the resist on the surface of the wafer W and the SPM liquid proceeds, and the resist peels off from the surface of the wafer W.
Thereafter, when a predetermined liquid film heating process time (in the range of 5 to 240 seconds, for example, about 14 seconds) elapses after the rotation speed of the wafer W is lowered, the control device 55 controls the amplifier 54 to detect infrared rays. The emission of infrared rays from the lamp 38 is stopped and the swing drive mechanism 36 and the lift drive mechanism 37 are controlled to return the heater head 35 to the home position. Then, the control device 55 controls the motor 6 to increase the rotational speed of the wafer W to a predetermined liquid processing rotational speed (in the range of 300 to 1500 rpm, for example, 1000 rpm), and opens the DIW valve 27 to open the DIW nozzle. DIW is supplied from the 24 discharge ports toward the vicinity of the rotation center of the wafer W (step S5: intermediate rinsing process). The DIW supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W toward the periphery of the wafer W. Thereby, the SPM liquid adhering to the surface of the wafer W is washed away by DIW.

When the DIW supply is continued for a predetermined intermediate rinse time, the DIW valve 27 is closed and the supply of DIW to the surface of the wafer W is stopped.
While maintaining the rotation speed of the wafer W at the liquid processing rotation speed, the controller 55 opens the SC1 valve 31 and supplies SC1 from the SC1 nozzle 25 to the surface of the wafer W (step S6). Further, the control device 55 controls the second liquid arm swing mechanism 29 to swing the second liquid arm 28 within a predetermined angle range, so that the SC1 nozzle 25 is placed on the rotation center and the peripheral portion of the wafer W. Move back and forth between the top and bottom. As a result, the supply position on the surface of the wafer W to which SC1 is guided from the SC1 nozzle 25 is in the range from the rotation center of the wafer W to the peripheral edge of the wafer W in an arc shape that intersects the rotation direction of the wafer W. Move back and forth while drawing a trajectory. Thereby, SC1 is supplied uniformly over the entire surface of the wafer W, and foreign substances such as resist residues and particles adhering to the surface of the wafer W can be removed by the chemical ability of SC1.

  When the supply of SC1 is continued for a predetermined SC1 supply time, the controller 55 closes the SC1 valve 31 and controls the second liquid arm swing mechanism 29 to return the SC1 nozzle 25 to the home position. In the state where the rotation speed of the wafer W is maintained at the liquid processing rotation speed, the controller 55 opens the DIW valve 27 and supplies DIW from the discharge port of the DIW nozzle 24 toward the vicinity of the rotation center of the wafer W. (Step S7: rinsing process). The DIW supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W toward the periphery of the wafer W. Thereby, SC1 adhering to the surface of the wafer W is washed away by DIW.

When the supply of DIW is continued for a predetermined rinse time, the DIW valve 27 is closed and the supply of DIW to the surface of the wafer W is stopped.
When a predetermined time has elapsed from the start of the rinsing process, the control device 55 closes the DIW valve 27 and stops the supply of DIW to the surface of the wafer W. Thereafter, the control device 55 drives the motor 6 to increase the rotational speed of the wafer W to a predetermined high rotational speed (for example, 1500 to 2500 rpm), and spins off the DIW adhering to the wafer W to be dried. A dry process is performed (step S8). The DIW adhering to the wafer W is removed by the spin dry process in step S8. In the intermediate rinsing step in step S5 and the rinsing step in step S7, not only DIW but also carbonated water, electrolytic ion water, ozone water, reduced water (hydrogen water), magnetic water, etc. may be employed as the rinsing liquid. it can.

When the spin dry process is performed for a predetermined spin dry process time, the control device 55 drives the motor 6 to stop the rotation of the wafer rotating mechanism 3. As a result, the resist removal process for one wafer W is completed, and the processed wafer W is unloaded from the processing chamber 2 by the transfer robot (step S9).
As described above, according to this embodiment, infrared rays are emitted from the infrared lamp 38 while the infrared lamp 38 is disposed opposite to the surface of the wafer W, so that the infrared lamp 38 exists in a region facing the infrared lamp 38 on the surface of the wafer W. The SPM liquid is heated.

  In parallel with the heating by the infrared lamp 38, the infrared lamp 38 is moved along the surface of the wafer W. For this reason, the region facing the infrared lamp 38 on the surface of the wafer W moves within a range from the region including the rotation center of the wafer W to the region including the peripheral edge of the wafer W while drawing an arc-shaped trajectory. 38 can heat almost the entire surface of the wafer W.

  In this case, since the SPM liquid existing on the surface of the wafer W can be heated near the boundary with the surface of the wafer W, the reaction between the resist on the surface of the wafer W and the SPM liquid can be promoted. Therefore, the resist can be satisfactorily removed from the entire surface of the wafer W, and even a resist having a hardened layer can be removed from the surface of the wafer W without ashing. Since resist ashing is unnecessary, the problem of damage to the surface of the wafer W due to ashing can be avoided.

In parallel with the heating of the SPM liquid existing on the surface of the wafer W, nitrogen gas is discharged radially from the annular inert gas discharge port 101 toward the side along the horizontal direction, thereby closing the opening 73. A gas curtain GC is formed. The space inside the cup 5 that accommodates the wafer rotation mechanism 3 and the space outside the cup 5 are blocked by the gas curtain GC.
Due to the heating of the SPM liquid by the infrared lamp 38, the SPM liquid is rapidly heated, and a large amount of SPM liquid mist may be generated around the surface of the wafer W. However, since the space inside and outside the cup 5 is blocked by the gas curtain GC formed by the nitrogen gas discharged from the annular inert gas discharge port 101, the atmosphere containing the SPM liquid mist is confined inside the cup 5. It is possible to suppress or prevent the atmosphere from diffusing into the processing chamber 2 (the space outside the gas curtain GC). Therefore, contamination in the processing chamber 2 can be prevented.

In particular, the inert gas discharge port 101 and the infrared lamp 38 are arranged close to each other, and the inert gas discharge port 101 is also moved along the horizontal direction as the infrared lamp 38 is moved. Regardless of the position of the head 35, the atmosphere containing the SPM liquid mist can be efficiently confined inside the cup 5.
Further, since the discharge direction of the nitrogen gas from the inert gas discharge port 101 and the moving direction of the heater head 35 are both horizontal, the gas curtain GC has a certain aspect regardless of the position of the heater head 35. It becomes like this.
In the SPM liquid film heating step (step S4 shown in FIG. 7), the SPM liquid is not supplied. However, in the SPM liquid film heating step of step S4, the SPM liquid may be supplied to the surface of the wafer W so that the flow rate per unit time is smaller than the first flow rate. The SPM liquid at a flow rate may be intermittently supplied to the wafer W held by the wafer rotation mechanism 3.

Figure 12 is a cross-sectional view of Hitahe' de 1 35 of the substrate processing apparatus 1A according to a second embodiment of the present invention. In the substrate processing apparatus 1A, in place of the heater head 35 shown in FIG. 2 or the like, Hitahe' de 1 35 is mounted. In the heater head 135 shown in FIG. 12, portions corresponding to the respective portions of the heater head 35 of the first embodiment are denoted by the same reference numerals as in FIG. The heater head 135 of the second embodiment is different from the heater head 35 of the first embodiment shown in FIG. 2 and the like in that a circular tube extending in the vertical direction is sucked into an inert gas circulation pipe 191 (gas circulation pipe). By the insertion of the pipe 192, the inert gas flow pipe 191 and the suction pipe 192 form a double pipe structure 190.
Figure 13 is a cross-sectional view of Hitahe' de 2 35 of the substrate processing apparatus 1B according to a third embodiment of the present invention. In the substrate processing apparatus 1B, in place of the heater head 35 shown in FIG. 2 or the like, Hitahe' de 2 35 is mounted. In the heater head 235 shown in FIG. 13, portions corresponding to the respective portions of the heater head 35 of the first embodiment are denoted by the same reference numerals as in FIG. The heater head 235 according to the third embodiment is different from the heater head 35 according to the first embodiment shown in FIG. 2 and the like in that one annular ring is formed as a discharge hole penetrating the inert gas flow pipe 90 in its thickness direction. The discharge hole 295 is provided. In this case, in order to support the lower rectifying plate 100, the lamp housing 40 and the lower rectifying plate 100 are connected by a plurality of connection pieces 202.

  Another difference of the heater head 135 of the second embodiment from the heater head 35 is that the suction port 194 of the suction pipe 192 is formed on the lower surface (opposing surface) 150B of the lower rectifying plate 150. The lower rectifying plate 150 has the same configuration as the lower rectifying plate 100 shown in FIG. 2 and the like except that the suction port 194 is formed. An annular inert gas discharge port (gas discharge port) 151 is formed by the peripheral edge of the upper surface 150 </ b> A of the lower rectifying plate 150 and the peripheral edge of the lower surface 52 </ b> B of the bottom plate part 52.

  The inert gas circulation pipe 191 is a round pipe (cylindrical pipe) having an inner diameter and an outer diameter larger than those of the inert gas circulation pipe 90 (see FIG. 2). The tip (lower end) of the inert gas flow pipe 191 passes through the bottom plate portion 52 of the lamp housing 40 and protrudes to the tip side (downward) from the lower surface 52B of the bottom plate portion 52, and the tip is closed by the lower rectifying plate 150. Has been. The suction pipe 192 is a round pipe (cylindrical pipe) having an outer diameter smaller than the inner diameter of the inert gas circulation pipe 191, and is arranged coaxially with the inert gas circulation pipe 191. Therefore, a cylindrical inert gas flow passage 193 is defined by the inner wall of the inert gas circulation pipe 191 and the outer wall of the suction pipe 192. An inert gas supply pipe 91 is connected to the inert gas flow passage 193.

  The tip (lower end) of the suction pipe 192 penetrates the lower rectifying plate 150 up and down and opens on the lower surface 150B of the lower rectifying plate 150 to form a suction port 194. One end of a suction pipe 196 is connected to the base end (upper end) of the suction pipe 192. The other end of the suction pipe 196 is connected to a suction device (not shown) that is always in operation. A suction valve 197 for opening and closing the suction pipe 192 is interposed in the middle of the suction pipe 196.

In this embodiment, the inert gas circulation pipe 191, the suction pipe 192, the lamp housing 40 and the lower rectifying plate 150 are integrally formed using quartz which is a transparent material.
Below the lower surface 52B of the bottom plate part 52 in the inert gas circulation pipe 191 (in other words, on the front end side), in other words, on the bottom wall part 52B of the bottom plate part 52 and the upper surface 150A of the lower rectifying plate 150 A plurality of (for example, eight) individual discharge holes 195 are formed between the pipe walls in the thickness direction. The plurality of individual discharge holes 195 are disposed at the same position in the flow direction of the inert gas flow pipe 191 and at equal intervals over the entire circumference of the inert gas flow pipe 191. The plurality of individual discharge holes 195 have the same specifications. Each individual discharge hole 195 discharges radially outward of the circular cross section (cross section orthogonal to the flow direction) of the inert gas flow pipe 191 in the individual discharge hole 195.

  As shown in FIG. 12, the inert gas discharge port (gas discharge port) 151 and each individual discharge hole 195 communicate with each other. Nitrogen gas supplied to the inert gas flow passage 193 is discharged from each individual discharge hole 195 through the inert gas flow passage 193. The nitrogen gas discharged from each individual discharge hole 195 is rectified by the bottom plate portion 52 and the lower rectifying plate 150 of the lamp housing 40 into an airflow that flows radially outward along the horizontal direction, It is supplied to the inert gas outlet 151. Thereby, nitrogen gas can be discharged radially from the inert gas outlet 151 toward the side along the horizontal direction.

  According to the second embodiment, when the lower surface 150B of the lower rectifying plate 150 is disposed to oppose the surface of the wafer W (position equivalent to the above-described proximity position), the suction port 194 is also close to the surface of the wafer W. Then face each other. In this state, when the suction valve 197 is opened and the inside of the suction port 194 is sucked, the atmosphere between the lower surface 150B of the lower rectifying plate 150 and the surface of the wafer W is sucked into the suction port 194. By such suction from the suction port 194, the space between the lower surface 150B of the lower rectifying plate 150 and the surface of the wafer W is reduced to a negative pressure.

  When the SPM liquid existing on the surface of the wafer W is heated using the infrared lamp 38 disposed opposite to the surface, the SPM liquid existing on the surface of the wafer W is heated rapidly, Large convection may occur above. As the convection increases, the amount of heat escaping from the SPM liquid existing on the surface of the wafer W increases, and this may cause the SPM liquid existing on the surface of the wafer W to be cooled.

  According to the second embodiment, since the space between the lower surface 150B of the lower rectifying plate 150 and the surface of the wafer W is set to a negative pressure, the space between the lower surface of the lower rectifying plate 150 and the surface of the wafer W is set. It is possible to suppress the occurrence of large convection. Accordingly, the amount of heat lost by the SPM liquid existing on the surface of the wafer W due to convection can be suppressed, and thus cooling of the SPM liquid existing on the surface of the wafer W can be suppressed or prevented. The SPM solution present on the surface of the can be kept warm.

In this case, in the space between the lower surface 150 </ b> B of the lower rectifying plate 150 and the surface of the wafer W, the negative pressure is made closer to the suction port 194. Therefore, a particularly high heat retention effect can be obtained at a portion facing the suction port 194 on the surface of the wafer W.
Further, due to the heating of the SPM liquid by the infrared lamp 38, the SPM liquid is rapidly heated and bumped, and a large amount of SPM liquid mist is generated in the space between the lower surface 150B of the lower rectifying plate 150 and the surface of the wafer W. There is a case. However, the atmosphere containing the SPM liquid mist is sucked by the suction of the suction port 194. Thus, the atmosphere containing the SPM liquid mist is exhausted from the space between the lower surface 150B of the lower rectifying plate 150 and the surface of the wafer W.

  FIG. 13 is a cross-sectional view of the heater head (holding head) 235 of the substrate processing apparatus 1B according to the third embodiment of the present invention. In the substrate processing apparatus 1B, a heater head (holding head) 235 is mounted instead of the heater head 35 shown in FIG. In the heater head 235 shown in FIG. 13, portions corresponding to the respective portions of the heater head 35 of the first embodiment are denoted by the same reference numerals as in FIG. The heater head 235 according to the third embodiment is different from the heater head 35 according to the first embodiment shown in FIG. 2 and the like in that one annular ring is formed as a discharge hole penetrating the inert gas flow pipe 90 in its thickness direction. The discharge hole 295 is provided. In this case, in order to support the lower rectifying plate 100, the lamp housing 40 and the lower rectifying plate 100 are connected by a plurality of connection pieces 202.

Although three embodiments of the present invention have been described above, the present invention can be implemented in other forms.
For example, the second embodiment and the third embodiment can be combined. That is, in FIG. 12, instead of the plurality of individual discharge holes 195, one annular discharge hole 295 can be provided.

Further, although the bottom plate portion 52 of the lamp housing 40 is adopted as the upper rectifying plate, an upper rectifying plate may be provided separately from the lamp housing 40. In this case, it is desirable to employ quartz as the material of the upper current plate.
Further, the heater heads 35, 135, and 235 may be configured not to scan (move).

Moreover, although nitrogen gas was illustrated as an example of the gas discharged from the inert gas discharge ports 101 and 151, clean air and other inert gas can be used as such gas.
The present invention can also be applied to a substrate processing apparatus that selectively etches a nitride film on the main surface of a substrate using a high-temperature etching solution such as phosphoric acid.
In addition, various design changes can be made within the scope of matters described in the claims.

1, 1A, 1B Substrate processing apparatus 2 Processing chamber 3 Wafer rotation mechanism (substrate holding means)
4 Stripping liquid nozzle (chemical supply means)
5 cups 35 Hitahe' de 36 swing drive mechanism (heater head moving means)
37 Elevating drive mechanism ( heater head moving means)
38 Infrared lamp 40 Lamp housing (heater housing)
52 Bottom plate (upper current plate)
60 Air supply route (route)
61 Exhaust route (route)
62 Air supply port (route)
63 Exhaust port (route)
64 Air supply piping (route)
73 Opening 90 Inert gas distribution piping (gas distribution piping , heater housing )
91 Inert gas supply pipe (first gas supply means)
92 Inert gas valve (first gas supply means) 95 Individual discharge hole 100 Lower rectifying plate (heater housing)
100B bottom surface (opposite surface)
101 Inert gas outlet (gas outlet)
135 Heater head (holding head)
150 Lower rectifying plate 150B Lower surface (opposite surface)
151 Inert gas outlet (gas outlet)
191 Inert gas distribution piping (gas distribution piping)
192 suction pipe 194 suction port 195 individual discharge holes 235 Hitahe' de 295 discharge hole C rotational axis GC gas curtain W wafer

Claims (12)

Substrate holding means for holding the substrate;
Chemical supply means for supplying a chemical to the main surface of the substrate held by the substrate holding means;
A quartz heater having an infrared lamp that radiates infrared rays to heat a chemical solution supplied to the main surface of the substrate, a facing surface facing the main surface of the substrate, and a lamp housing space for housing the infrared lamp. A heater head having a housing and an annular gas discharge port that is provided between the facing surface and the infrared lamp in a direction intersecting the main surface of the substrate in the heater housing and discharges gas radially.
A flow passage through which a gas to be supplied to the gas discharge port circulates, and the flow passage through which the lamp housing space is inserted without communicating with the inside of the lamp housing space;
And a first gas supply means for supplying the gas to the flow passage. The opposing surface has a smaller diameter than the main surface of the substrate;
The substrate processing apparatus according to claim 1, further comprising a heater head moving unit that moves the heater head along the main surface of the substrate. A cup having an opening sized to pass through the substrate at a position facing the main surface of the substrate held by the substrate holding means and containing the substrate holding means;
The substrate processing apparatus according to claim 1, wherein the gas discharge port is disposed in the opening, and the gas discharge port discharges the gas toward an opening end of the cup.   The substrate processing apparatus according to claim 1, further comprising a second gas supply unit that supplies a cooling gas to the accommodation space through a predetermined path that does not pass through the flow path. The flow passage has a gas distribution pipe through which the gas to be supplied to the gas discharge port passes through the inside of the housing space,
The gas flow pipe has a discharge hole penetrating in a thickness direction through a pipe wall supplied to the gas discharge port,
The heater housing includes an upper rectifying plate and a lower rectifying plate that rectify the gas discharged from the discharge hole through the gas circulation pipe into an airflow along a main surface of the substrate held by the substrate holding means. Including
5. The substrate processing apparatus according to claim 1, wherein the flow passage has a rectifying space that supplies an air flow rectified by the pair of rectifying plates to the gas discharge port. 6.   The substrate processing apparatus according to claim 5, wherein the discharge holes have a plurality of individual discharge holes arranged at intervals in the circumferential direction over the entire circumference of the gas circulation pipe.   The substrate processing apparatus according to claim 5, wherein the discharge hole is formed in an annular shape along a circumferential direction of the gas flow pipe. The infrared lamp has an annular shape surrounding the gas circulation pipe,
The substrate processing apparatus as described in any one of Claims 5-7 which heats the gas which distribute | circulates the said gas distribution piping by the tube wall of the said gas distribution piping being heated by the infrared irradiation by the said infrared lamp. . The substrate processing apparatus according to any one of claims 5 to 8, wherein a tube wall of the gas circulation pipe is formed integrally with the heater housing. The substrate processing apparatus according to claim 5 , wherein the lower rectifying plate is supported by the gas circulation pipe. A suction pipe having a suction port and inserted into the gas flow pipe;
A suction means for sucking the inside of the suction pipe;
The gas flow pipe and the suction pipe form a double pipe structure by inserting the suction pipe into the gas flow pipe,
The substrate processing apparatus according to claim 5 , wherein a tip of the suction pipe penetrates the lower rectifying plate to form the suction port.   The substrate processing apparatus according to claim 1, wherein the chemical solution is a resist stripping solution.

Images