JP6324052B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus that performs chemical processing on a substrate.

  The manufacturing process of a semiconductor device includes, for example, a step of locally implanting impurities (ions) such as phosphorus, arsenic, and boron into the main surface of a substrate such as a semiconductor wafer (hereinafter simply referred to as “wafer”). . In this step, in order to prevent ion implantation into unnecessary portions, a resist made of a photosensitive resin is patterned on the surface of the wafer, and unnecessary portions for ion implantation are masked with the resist. Since the resist patterned on the surface of the wafer becomes unnecessary after the ion implantation, a resist removal process for removing the unnecessary resist on the surface of the wafer is performed after the ion implantation.

  In a typical example of such a resist removal process, first, oxygen plasma is irradiated to the surface of the wafer, and the resist on the surface of the wafer is ashed. Then, a chemical solution such as a sulfuric acid / hydrogen peroxide mixture (SPM solution) which is a mixed solution of sulfuric acid and hydrogen peroxide solution is supplied to the surface of the wafer, and the ashed resist is removed. This achieves removal of the resist from the surface of the wafer.

  However, irradiation with oxygen plasma for resist ashing damages a portion of the wafer surface not covered with the resist (for example, an oxide film exposed from the resist).

  Therefore, recently, without ashing the resist, an SPM solution is supplied to the wafer surface, and the resist is peeled off from the wafer surface by the strong oxidizing power of peroxomonosulfuric acid (H2SO5) contained in the SPM solution. The removal method is attracting attention.

JP 2013-197115 A

  However, in a wafer subjected to high dose ion implantation, the resist may be carbonized (cured). In this case, the surface of the wafer is also affected by the strong oxidizing power of peroxomonosulfuric acid (H2SO5) contained in the SPM solution. It is difficult to remove the resist from

  On the other hand, it is known that when the liquid temperature of the SPM liquid is set to a high temperature of 200 ° C. or higher, the SPM liquid exhibits high resist stripping performance. With such a high-temperature SPM solution, even a resist having a hardened layer on the surface can be removed from the surface of the wafer without ashing. In addition, since the resist stripping efficiency is increased by keeping the temperature of the SPM liquid at a high temperature of 200 ° C. or higher, the resist stripping processing time can be shortened.

  However, since the SPM liquid supplied to the surface of the wafer diffuses along the wafer surface, the SPM liquid does not stay at the heated spot on the wafer surface (the spot to be heated by the heating unit). It is difficult to keep the liquid temperature at 200 ° C. or higher.

  Such a problem is common to not only resist removal processing using a resist stripping solution such as SPM solution, but also selective etching processing of a nitride film using high-temperature phosphoric acid.

  An object of the present invention is to provide a substrate processing apparatus that can perform chemical processing on a main surface of a substrate with energy saving by increasing the temperature of the chemical supplied to the main surface of the substrate with high efficiency.

A substrate processing apparatus according to a first aspect of the present invention includes a substrate holding unit that horizontally holds a substrate, and a chemical liquid discharge head that is disposed above the substrate held by the substrate holding unit, The chemical solution discharge head has a discharge port that opens toward the upper surface of the substrate, supplies a chemical solution supplied from a chemical solution supply source and discharges it from the discharge port, and a lower surface of the chemical solution discharge head A skirt that extends from the side of the chemical liquid discharge head so as to protrude further downward and surrounds the heat treatment space sandwiched between the upper surface of the substrate held by the substrate holding means and the lower surface of the chemical liquid discharge head And a heating unit for heating the heat treatment space, supplying the chemical liquid from the chemical liquid supply source to the chemical liquid circulation pipe, and discharging the chemical liquid from the discharge port of the chemical liquid circulation pipe toward the heat treatment space. Said medicinal solution At least part of which is retained within the heat treatment space dammed by the skirt state, wherein the heating unit heats the chemical solution held inside the heat treatment space.
A substrate processing apparatus according to a second aspect of the present invention includes a substrate holding unit that horizontally holds a substrate, and a chemical liquid discharge head that is disposed above the substrate held by the substrate holding unit, The chemical liquid discharge head has a discharge port opened on the lower surface of the chemical liquid discharge head toward the upper surface of the substrate, and supplies a chemical liquid distribution pipe that feeds the chemical liquid supplied from the chemical liquid supply source and discharges it from the discharge port. The substrate is provided along the outer periphery of the lower surface of the chemical solution discharge head in a horizontal plan view, extends from the chemical solution discharge head side so as to protrude downward from the lower surface, and is held by the substrate holding means. A skirt that surrounds a heat treatment space sandwiched between an upper surface and the lower surface of the chemical solution discharge head; and a heating unit that heats the heat treatment space, and the chemical solution is supplied from the chemical solution supply source to the chemical solution distribution pipe. Supply and said In a state where at least a part of the chemical liquid discharged from the discharge port of the liquid circulation pipe toward the upper surface of the substrate is held in the heat treatment space by the skirt portion, the heating unit performs the heat treatment. The medicinal solution held in the space is heated.

A substrate processing apparatus according to a third aspect of the present invention is the substrate processing apparatus according to the first or second aspect of the present invention, comprising a gas suction channel attached to the chemical liquid discharge head, and the gas suction A suction part having an external suction port that communicates with the flow path and opens along the outer periphery of the skirt part, and performs gas suction from a gas suction source through the gas suction flow path. The ambient atmosphere around the external suction port is sucked.

A substrate processing apparatus according to a fourth aspect of the present invention is the substrate processing apparatus according to the first or second aspect of the present invention, comprising a gas suction channel attached to the chemical liquid discharge head, and the gas suction An external suction port that communicates with the flow path and opens along the outer periphery of the skirt portion; and an internal suction port that communicates with the gas suction flow channel and opens into the heat treatment space. Further, the gas suction channel extends along the chemical liquid discharge head from a connection side to a gas suction source, and is branched into a plurality of branches at a branch point relatively fixed to the chemical liquid discharge head. A first branch that communicates with the external suction port as a first branch of the main road, and a second branch that communicates with the internal suction port as a second branch of the main road The gas suction is performed by performing gas suction from the gas suction source. Through the road characterized by sucking the ambient atmosphere surrounding atmosphere and the inner suction port of the external suction port.

A substrate processing apparatus according to a fifth aspect of the present invention is the substrate processing apparatus according to the fourth aspect of the present invention, wherein the flow path extends from the internal suction port to the trunk path through the second branch. The portion has a trap structure that moves up and down in the height direction.

The substrate processing apparatus according to a sixth aspect of the present invention is a substrate processing apparatus according to any one of the first to third aspect of the present invention, a vent that opens to the interior of the heat treatment space, the It further has a ventilation part which has a ventilation passage which connects a ventilation hole and the external space of the above-mentioned chemical solution discharge head.

A substrate processing apparatus according to a seventh aspect of the present invention is the substrate processing apparatus according to any one of the first to sixth aspects of the present invention, wherein at least a part of the skirt portion has an arc shape in a horizontal plane view. It is characterized by having.

A substrate processing apparatus according to an eighth aspect of the present invention is the substrate processing apparatus according to any one of the first to sixth aspects of the present invention, wherein the skirt portion is circular in a horizontal plan view. To do.

A substrate processing apparatus according to a ninth aspect of the present invention is the substrate processing apparatus according to any one of the first to sixth aspects of the present invention, wherein the skirt portion is rectangular in a horizontal plan view. To do.

A substrate processing apparatus according to a tenth aspect of the present invention is the substrate processing apparatus according to any one of the first to ninth aspects of the present invention, further comprising an elevating unit for elevating and lowering the chemical liquid ejection head. It is characterized by.
A substrate processing apparatus according to an eleventh aspect of the present invention is the substrate processing apparatus according to any one of the first to tenth aspects of the present invention, wherein the chemical solution circulation pipe is extended with at least one target extending in a horizontal plane. A heating pipe section, and the heating unit is arranged in a horizontal plane along the heated pipe section, and the substrate is fed from the chemical solution fed through the heated pipe section and the discharge port. Both the chemicals discharged to the upper surface of the liquid are heated.
A substrate processing apparatus according to a twelfth aspect of the present invention is the substrate processing apparatus according to the eleventh aspect of the present invention, wherein the heated pipeline section and the heating section are arranged in the same horizontal plane. It is characterized by.
A substrate processing apparatus according to a thirteenth aspect of the present invention is the substrate processing apparatus according to the eleventh or twelfth aspect of the present invention, wherein the heated channel section constitutes the lower surface of the chemical liquid discharge head. It is formed inside the part.
A substrate processing apparatus according to a fourteenth aspect of the present invention is the substrate processing apparatus according to any one of the eleventh to thirteenth aspects of the present invention, wherein both sides of the discharge port of the chemical solution distribution pipe in a horizontal plan view. The heating unit is arranged in the above.
A substrate processing apparatus according to a fifteenth aspect of the present invention is the substrate processing apparatus according to any one of the eleventh to fourteenth aspects of the present invention, wherein the heating unit includes infrared irradiation means, Of the outer periphery of the heated pipeline section of the chemical solution circulation pipe, at least a portion facing the infrared irradiation means is covered with a black film.
A substrate processing apparatus according to a sixteenth aspect of the present invention is the substrate processing apparatus according to any one of the eleventh to fifteenth aspects of the present invention, wherein the heating section is arcuate in a horizontal plan view. And
A substrate processing apparatus according to a seventeenth aspect of the present invention is the substrate processing apparatus according to any one of the eleventh to fifteenth aspects of the present invention, wherein the heating section is linear in a horizontal plan view. And
A substrate processing apparatus according to an eighteenth aspect of the present invention is the substrate processing apparatus according to any one of the eleventh to seventeenth aspects of the present invention, wherein a plurality of the chemical solution distribution pipes are arranged in parallel. It has the said to-be-heated pipeline area, It is characterized by the above-mentioned.
A substrate processing apparatus according to a nineteenth aspect of the present invention is the substrate processing apparatus according to any one of the eleventh to eighteenth aspects of the present invention, wherein the chemical solution distribution pipe has a plurality of the discharge ports. Features.
A substrate processing apparatus according to a twentieth aspect of the present invention is the substrate processing apparatus according to the nineteenth aspect of the present invention, wherein the plurality of discharge ports are upstream of the chemical solution in the heated pipeline section. The second portion on the downstream side of the chemical solution is arranged so as to avoid the first portion on the side.

In the substrate processing apparatus according to each embodiment of the present invention heats the thermal unit pressure is held within the heat treatment space chemical. For this reason, the inside of the heat treatment space can be filled with the chemical heated by the heating unit, and the treatment using the high temperature chemical can be favorably performed on the upper surface of the substrate.

In the substrate processing apparatus according to the third aspect of the present invention, the atmosphere around the external suction port is sucked through the gas suction channel by performing gas suction from the gas suction source. For this reason, the atmosphere (for example, fume) formed with the chemical | medical solution etc. which flowed out of the heat processing space can be sucked from the external suction port by the suction part. As a result, it is possible to effectively prevent each part of the substrate processing apparatus and the substrate to be processed from being contaminated by the atmosphere.

In the substrate processing apparatus according to the fourth aspect of the present invention, the ambient atmosphere of the external suction port and the ambient atmosphere of the internal suction port are sucked through the gas suction channel by performing gas suction from the gas suction source. For this reason, the atmosphere (for example, fume) formed with the chemical | medical solution etc. which flowed out of the heat processing space can be sucked from the external suction port by the suction part. In addition, an atmosphere (for example, fume) formed by a chemical solution or the like inside the heat treatment space can be sucked from the internal suction port. As a result, it is possible to effectively prevent each part of the substrate processing apparatus and the substrate to be processed from being contaminated by the atmosphere.

The substrate processing apparatus according to the fifth aspect of the present invention has a trap structure in which the flow path portion extending from the internal suction port to the trunk path through the second branch path moves up and down in the height direction. For this reason, it is difficult for a liquid (chemical solution or the like) flowing inside the heat treatment space to flow into the main path or the first branch.

In the substrate processing apparatus according to the sixth aspect of the present invention, a ventilation portion having a ventilation opening that opens inside the heat treatment space, and a ventilation path that communicates and connects the ventilation hole and the external space of the chemical liquid ejection head. And further. For this reason, the atmosphere (for example, fume) formed with a chemical solution or the like inside the heat treatment space can be exhausted from the vent through the vent path to the outside. Thereby, the inside of the heat treatment space can be effectively prevented from being filled with the above atmosphere, and the substrate processing can be performed while filling the inside of the heat treatment space with a high temperature chemical.

It is a figure which shows typically the structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a schematic perspective view of the chemical | medical solution discharge head which concerns on 1st Embodiment. It is a cross-sectional view of the chemical liquid discharge head according to the first embodiment. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head seen from the AA cross section shown in FIG. 1 is a block diagram showing an electrical configuration of a substrate processing apparatus according to a first embodiment. It is a flowchart which shows the process example of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure which shows operation | movement of the chemical | medical solution discharge head in the case of the resist removal process shown in FIG. It is a figure which shows operation | movement of the chemical | medical solution discharge head in the case of the resist removal process shown in FIG. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head which shows the mode of the resist removal process shown in FIG. It is a schematic perspective view of the chemical | medical solution discharge head which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head seen from the BB cross section shown in FIG. FIG. 12 is a transverse cross-sectional view of the chemical liquid ejection head viewed from the CC cross section shown in FIG. 11. FIG. 12 is a transverse cross-sectional view of the chemical liquid ejection head viewed from the DD cross section shown in FIG. 11. It is a longitudinal cross-sectional view of the baseplate part which concerns on 2nd Embodiment. It is a schematic perspective view of the chemical | medical solution discharge head which concerns on 3rd Embodiment. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head which concerns on 3rd Embodiment. FIG. 17 is a cross-sectional view of the chemical liquid ejection head viewed from the EE cross section shown in FIG. 16. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head concerning a modification. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head concerning a modification. It is a schematic perspective view of the chemical solution discharge head concerning a modification. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head concerning a modification. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head concerning a modification. It is a longitudinal cross-sectional view of the chemical | medical solution discharge head concerning a modification.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1 First Embodiment>
<1.1 Configuration of Substrate Processing Apparatus 1>
FIG. 1 is a diagram schematically showing the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 removes unnecessary resist from one main surface of the wafer W on a substrate (hereinafter referred to as a wafer W) whose main surface on one side has been subjected to ion implantation processing or dry etching processing. It is a single wafer type device.

  The substrate processing apparatus 1 is held in a processing chamber 2 partitioned by a partition wall (not shown), a wafer rotating mechanism (substrate holding means) 3 that holds the wafer W in a horizontal posture so as to be rotatable, and a wafer rotating mechanism 3. And a chemical liquid ejection head 35 disposed opposite to the upper main surface (upper surface S1) of the wafer W. The chemical liquid discharge head 35 includes a configuration for supplying an SPM liquid as an example of a resist stripping liquid (chemical liquid) to the upper surface S1 of the wafer W and a configuration for heating the SPM liquid discharged on the upper surface S1 of the wafer W ( Details will be described later with reference to FIGS.

<Wafer rotation mechanism 3>
The wafer rotation mechanism 3 includes a motor 6, a spin shaft 7 integrated with a drive shaft of the motor 6, a disc-shaped spin base 8 attached to the upper end of the spin shaft 7 substantially horizontally, and a spin base 8. And a plurality of sandwiching members 9 provided at substantially equal angular intervals at a plurality of locations on the peripheral edge of the.

  The plurality of clamping members 9 are members that are driven in conjunction with a link mechanism (not shown) housed in the spin base 8. Therefore, by driving the link mechanism, a state in which the wafer W is held in a horizontal posture and a state in which the holding of the wafer W is released are switched.

  When the motor 6 is driven in a state where the wafer W is held in a horizontal posture by the plurality of holding members 9, the spin base 8 and the wafer W held by the spin base 8 are rotated around the rotation axis (vertical axis) C by the driving force. To be rotated. Note that the manner in which the wafer rotation mechanism 3 holds the wafer W is not limited to the above-described sandwiching type, and for example, a vacuum suction type that holds the wafer W by vacuum suction of the lower surface of the wafer W. It does not matter.

<Oscillation drive mechanism 36, lift drive mechanism 37>
A support shaft 33 extending in the vertical direction is disposed on the side of the wafer rotation mechanism 3. An arm 34 extending in the horizontal direction is coupled to the upper end portion of the support shaft 33, and a chemical liquid discharge head 35 that houses and holds an infrared lamp 38 is attached to the tip of the arm 34. The support shaft 33 includes a swing drive mechanism 36 for rotating the support shaft 33 around a central axis (vertical axis), and a lift drive mechanism (for moving the support shaft 33 up and down along the central axis). (Elevating part) 37 is coupled. For this reason, the swing drive mechanism 36 and the lift drive mechanism 37 function as moving means for moving the chemical liquid discharge head 35.

  When a driving force is input from the swing drive mechanism 36 to the support shaft 33, the support shaft 33 is rotated within a predetermined angle range around the central axis, and the arm 34 is swung with the support shaft 33 as a fulcrum. . As the arm 34 swings, the chemical liquid discharge head 35 attached to the tip of the arm 34 is positioned immediately above the wafer W held by the wafer rotating mechanism 3 (the first position shown in FIG. And a home position set to the side of the wafer rotation mechanism 3.

  Further, when a driving force is input from the lifting drive mechanism 37 to the support shaft 33, the support shaft 33 is moved up and down. Due to the vertical movement of the support shaft 33, the chemical liquid discharge head 35 attached to the tip of the arm 34 is close to the upper surface S 1 of the wafer W held by the wafer rotation mechanism 3 (first position and first position described later). The position is raised and lowered between a position indicated by a two-dot chain line in FIG. 1 and a retracted position (position indicated by a solid line in FIG. 1) retracted above the proximity position.

  In this embodiment, the proximity position is such that the distance between the upper surface S1 of the wafer W held by the wafer rotating mechanism 3 and the lower surface of the chemical liquid discharge head 35 (the lower surface 529 of the bottom plate portion 52 (see FIG. 2)) is about 3 mm, for example. Is set to a position.

<DIW nozzle 24, SC1 nozzle 25>
The substrate processing apparatus 1 also holds the DIW nozzle 24 for supplying DIW (deionized water) as a rinsing liquid to the upper surface S1 of the wafer W held by the wafer rotation mechanism 3 and the wafer rotation mechanism 3. An SC1 nozzle 25 for supplying SC1 (ammonia-hydrogen peroxide mixture) as a cleaning chemical to the upper surface S1 of the wafer W is provided.

  The DIW nozzle 24 is, for example, a straight nozzle that discharges DIW in a continuous flow state, and is fixedly disposed above the wafer rotation mechanism 3 with its discharge port directed toward the vicinity of the rotation center of the wafer W. A DIW supply pipe 26 to which DIW is supplied from a DIW supply source is connected to the DIW nozzle 24. A DIW valve 27 for switching the supply / stop of supply of DIW from the DIW nozzle 24 is inserted in the middle of the path of the DIW supply pipe 26.

  The SC1 nozzle 25 is, for example, a straight nozzle that discharges SC1 in a continuous flow state. The SC1 nozzle 25 is attached to the tip of a liquid arm 28 that extends substantially horizontally with its discharge port facing downward. The liquid arm 28 is provided so as to be rotatable around a predetermined swing axis extending in the vertical direction. A liquid arm swing mechanism 29 for swinging the liquid arm 28 within a predetermined angle range is coupled to the liquid arm 28. As the liquid arm 28 swings, the SC1 nozzle 25 is moved between a position immediately above the wafer W (a position facing the rotation center of the wafer W) and a home position set to the side of the wafer rotation mechanism 3. The

  An SC1 supply pipe 30 to which SC1 from an SC1 supply source is supplied is connected to the SC1 nozzle 25. An SC1 valve 31 for switching supply / stop of supply of SC1 from the SC1 nozzle 25 is interposed in the middle of the path of the SC1 supply pipe 30.

<Schematic configuration of the chemical liquid discharge head 35>
FIG. 2 is a schematic perspective view of the chemical liquid discharge head 35. FIG. 3 is a transverse sectional view of the chemical liquid discharge head 35. FIG. 4 is a longitudinal sectional view of the chemical liquid ejection head 35 as viewed from the AA section in FIG. 3. In addition, in FIG. 2, especially the structure which concerns on the chemical | medical solution distribution piping 4 and the two infrared lamps 38 is schematically shown among each structure with which the chemical | medical solution discharge head 35 is provided.

  As shown in FIGS. 2 to 4, the chemical liquid discharge head 35 is configured in a substantially arc shape in a horizontal plan view, and is disposed on both sides of the chemical liquid distribution pipe 4 for feeding the SPM liquid and the chemical liquid distribution pipe 4. A total of two infrared lamps 38 are provided.

  Further, the chemical liquid discharge head 35 has an opening in the upper part, a bottomed container-like lamp housing 40 that accommodates the infrared lamp 38, an outer wall portion 75 formed so as to surround the side of the lamp housing 40, a lamp And a lid 41 for closing the housing 40 and the upper portion of the outer wall 75. The chemical solution distribution pipe 4 and the lamp housing 40 are integrally formed using, for example, quartz which is a transparent material.

<Chemical liquid distribution pipe 4>
The chemical liquid distribution pipe 4 has an upstream end connected to the supply pipe 15, a first conduit 401 for feeding the SPM liquid through the inside of the arm 34 and the inside of the chemical liquid discharge head 35, and the inside of the chemical liquid discharge head 35. In the chemical liquid discharge head 35, one end portion is connected to the second conduit 402 and the other end portion is the third end portion in the chemical liquid discharge head 35. A fourth pipeline 404 connected to the pipeline 403 is provided in this order from the upstream side. Further, the chemical liquid circulation pipe 4 has a plurality of discharge ports 80 communicating with the fourth pipe 404 (heated pipe section).

  The fourth conduit 404 is a conduit extending in a horizontal plane, and is disposed in proximity to the bottom plate portion 52 of the lamp housing 40 that is also horizontally disposed. Further, the fourth conduit 404 is provided with the plurality of discharge ports 80. Each of the plurality of discharge ports 80 penetrates the tube wall of the fourth duct 404 extending in the horizontal direction downward and penetrates the bottom plate portion 52 of the lamp housing 40, and extends downward from the lower surface 529 of the bottom plate portion 52. Open toward. For this reason, when the chemical liquid discharge head 35 is positioned at the processing position, the plurality of discharge ports 80 are opened toward the upper surface S1 of the wafer W held by the wafer rotation mechanism 3.

  Since it is configured as described above, the SPM liquid supplied from the supply pipe 15 to the chemical liquid circulation pipe 4 is either the first pipe line 401, the second pipe line 402, or the third pipe line 403. Then, after the liquid is fed in the order of the fourth pipe 404, the liquid is discharged from the plurality of discharge ports 80 provided in the fourth pipe 404 toward the upper surface S1 of the wafer W held by the wafer rotating mechanism 3.

<Infrared lamp 38>
The infrared lamp 38 is a lamp configured by arranging a filament in a quartz pipe. The chemical liquid discharge head 35 accommodates and holds two infrared lamps 38. An amplifier 54 for applying a voltage is connected to the upper end portions (a total of four locations) of the two infrared lamps 38. As the infrared lamp 38, for example, a short, medium, or long wavelength infrared heater represented by a halogen lamp or a carbon heater can be employed.

  Each of the two infrared lamps 38 includes two vertical portions 43 extending in the vertical direction and a horizontal portion 44 that extends in the horizontal direction and connects the lower ends of the two vertical portions 43. It is a letter-shaped lamp. For this reason, when a voltage is applied from the amplifier 54 to the two infrared lamps 38, the horizontal portions 44 of the two infrared lamps 38 radiate infrared rays. In a resist removal process to be described later, infrared rays are irradiated from the horizontal portion 44 in a state where the chemical liquid ejection head 35 is positioned above the wafer W, and the upper surface S1 of the wafer W and the SPM liquid on the upper surface S1 of the wafer W are heated. In the two infrared lamps 38, it is sufficient that at least the horizontal part 44 functions as a light emitting part (heating part), and whether the vertical part 43 functions as a light emitting part (heating part) or not may be any. Below, the structure which only the horizontal part 44 heats (that is, the structure by which a filament is arrange | positioned only in the horizontal part 44) is demonstrated.

  Further, the horizontal portions 44 (heating portions) of the two infrared lamps 38 are arranged on both sides of the fourth conduit 404 along the fourth conduit 404 (heated conduit section) of the chemical solution circulation piping 4. The Therefore, the fourth pipe 404 of the chemical solution circulation pipe 4 disposed between the horizontal portions 44 of the two infrared lamps 38 is heated by the infrared rays irradiated from the side surfaces of the horizontal portions 44 of the two infrared lamps 38.

  By the infrared irradiation from the horizontal portions 44 of the two infrared lamps 38, the tube wall of the fourth conduit 404 of the chemical solution distribution pipe 4 is heated to about 300 ° C., for example. When the SPM liquid is supplied from the supply pipe 15 to the chemical liquid distribution pipe 4 in this state, the SPM liquid flowing through the chemical liquid distribution pipe 4 is heated from the pipe wall of the fourth pipe line 404 and radiates two infrared rays. Heat is applied from the horizontal portion 44 of the infrared lamp 38. As a result, the heated SPM liquid is discharged from a plurality of discharge ports 80 provided in the fourth pipe 404.

  Thus, in the present embodiment, the horizontal portions 44 (heating portions) of the infrared lamps 38 are provided on both sides in the horizontal direction of the fourth conduit 404 (heated conduit section) extending in the horizontal plane, and the fourth tube Compared to the configuration in which the horizontal portion 44 (heating portion) of the infrared lamp 38 is provided only on one side in the horizontal direction of the passage 404 (heated pipeline section), the flow flows in the fourth pipe 404 (heated pipeline section). The SPM liquid is heated more uniformly in space.

  Moreover, in this embodiment, the horizontal part 44 (heating part) of the two infrared lamps 38 is arrange | positioned in parallel along the 4th pipe line 404 (to-be-heated pipe line area) of the chemical | medical solution distribution piping 4. FIG. For this reason, the configuration of the present embodiment is a configuration in which the horizontal portion 44 of the infrared lamp 38 and the fourth pipeline 404 of the chemical solution circulation pipe 4 are arranged in an arrangement relationship other than the parallel arrangement (for example, arranged so as to cross each other). The SPM liquid flowing through the inside of the fourth pipe 404 of the chemical liquid circulation pipe 4 can be more uniformly heated by the horizontal portion 44 of the infrared lamp 38 as compared to the configuration etc.

  Further, when at least a portion facing the horizontal portion 44 (infrared irradiation means) of the infrared lamp 38 in the outer periphery of the fourth pipeline 404 (heated pipeline section) of the chemical solution circulation pipe 4 is covered with a black film, In the fourth pipeline 404 of the chemical liquid circulation pipe 4, it becomes easy to absorb infrared rays irradiated from the horizontal portion 44 of the infrared lamp 38, and the fourth pipeline 404 can be efficiently heated. Such a black film can be formed using, for example, alumina, silica, or the like as a main component.

  Further, a bottom plate portion 52 constituting the lower surface of the chemical liquid discharge head 35 is disposed immediately below the horizontal portion 44 of the two infrared lamps 38. For this reason, when a voltage is applied from the amplifier 54 to the two infrared lamps 38, the horizontal portions 44 of the two infrared lamps 38 emit infrared rays, and the bottom plate portion disposed immediately below the horizontal portions 44 of the two infrared lamps 38. 52 is also heated.

<Lid 41, support member 42>
The lid 41 is formed using a fluororesin material such as PTFE (polytetrafluoroethylene). In this embodiment, the lid 41 is formed separately from the arm 34, but the lid 41 may be formed integrally with the arm 34. In addition to a resin material such as PTFE, a material such as ceramics or quartz can also be used as the material of the lid 41.

  A groove 51 is formed in the lower surface 49 of the lid 41. The groove 51 has an upper bottom surface 50 made of a horizontal flat surface, and the upper surface 420 of the support member 42 is fixed to the upper bottom surface 50 in contact therewith.

  The support member 42 has a thick plate shape, and is attached and fixed to the lid 41 from below with a bolt 56 or the like in a horizontal posture. The support member 42 is formed using a heat-resistant material (for example, ceramics or quartz). The support member 42 is provided with an insertion hole that penetrates the upper surface 420 and the lower surface 421 in the vertical direction (vertical direction) for the purpose of inserting and holding the vertical portion 43 of the infrared lamp 38.

  An O-ring 48 is provided in the middle of each insertion hole of the support member 42. The vertical portions 43 of the two infrared lamps 38 are fitted and fixed by being pressed against the O-rings 48 of the respective insertion holes.

<Bottom plate part 52, skirt part 81>
The bottom plate portion 52 of the lamp housing 40 has a substantially arc shape in a horizontal view. The bottom plate portion 52 is a portion constituting the lower surface of the chemical liquid ejection head 35, and the upper surface 528 and the lower surface 529 of the bottom plate portion 52 each form a horizontal flat surface.

  In the lamp housing 40, the horizontal portion 44 of the two infrared lamps 38 and the upper surface 528 of the bottom plate portion 52 are disposed horizontally.

  Further, the horizontal portion 44 and the upper surface 528 of the two infrared lamps 38 are arranged close to each other so that the vertical distance between them is, for example, about 2 mm. As a result, the horizontal portion 44 functioning as a heating portion and the upper surface S1 of the wafer W to be heated are brought close to each other, so that the upper surface S1 of the wafer W can be more efficiently heated by the horizontal portion 44.

  Further, when the chemical liquid discharge head 35 is arranged at the processing position, the wafer W held by the wafer rotation mechanism 3 and the bottom plate portion 52 face each other. For this reason, the upper surface S <b> 1 of the wafer W held by the wafer rotation mechanism 3 can be heated by the horizontal portion 44. In particular, in this embodiment, since the horizontal portion 44 and the wafer W held by the wafer rotating mechanism 3 are both in the horizontal posture, the upper surface S1 of the wafer W can be more uniformly heated by the horizontal portion 44.

  The skirt portion 81 is a portion extending from the chemical liquid ejection head 35 side so as to protrude downward from the lower surface 529 of the bottom plate portion 52. The skirt portion 81 is provided along the outer periphery of the lower surface 529 in the horizontal plan view. For this reason, the side of the heat treatment space HL sandwiched between the upper surface S1 of the wafer W held by the wafer rotation mechanism 3 and the lower surface 529 of the bottom plate portion 52 (the lower surface of the chemical liquid ejection head 35) is surrounded by the skirt portion 81.

  Here, “the side of the heat treatment space HL is surrounded by the skirt portion 81” means that the skirt portion 81 functions as a fluid barrier against the SPM liquid flowing from the inside to the outside of the heat treatment space HL in the resist removal process described later. It means to do. Therefore, the lower end of the skirt portion 81 is in contact with the upper surface S1 of the wafer W held by the wafer rotating mechanism 3 (that is, the heat treatment space HL is formed by the lower surface 529 of the bottom plate portion 52, the upper surface S1 of the wafer W, and the skirt portion 81). Is not essential, and there may be a slight gap between the lower end of the skirt portion 81 and the upper surface S1 of the wafer W held by the wafer rotation mechanism 3.

  Thus, the heat treatment space HL is partitioned from the space outside the skirt portion 81 by the skirt portion 81. In the resist removal process described later, the SPM liquid discharged from the plurality of discharge ports 80 is blocked by the skirt portion 81 and held in the heat treatment space HL. For this reason, the inside of the heat treatment space HL can be filled with the SPM liquid heated by the horizontal part 44 by irradiating the horizontal part 44 with infrared rays, and the resist film formed on the upper surface S1 of the wafer W can be filled with the SPM. It can be efficiently peeled off by the liquid.

  The bottom plate portion 52 and the skirt portion 81 are integrally formed, and these are made of a heat resistant material (for example, quartz).

<Suction unit 100>
The outer wall portion 75 is formed in a substantially arc shape in a horizontal plan view so as to surround the side of the lamp housing 40 with a predetermined interval. The upper part of the space sandwiched between the lamp housing 40 and the outer wall portion 75 is closed by a lid 41. A lower portion of the space between the lamp housing 40 and the outer wall portion 75 opens along the outer periphery of the skirt portion 81. Hereinafter, the space sandwiched between the lamp housing 40 and the outer wall portion 75 is referred to as “suction path 101”, and the opening formed along the outer periphery of the skirt portion 81 in communication with the suction path 101 is referred to as “external suction port”. 102 ".

  Further, a suction path 105 that penetrates the inside of the lid 41 is formed. One end of the suction path 105 is connected to the upper end of the suction path 101 attached to the chemical liquid discharge head 35, and the other end of the suction path 105 is a suction source 107 (gas suction source) provided outside the chemical liquid discharge head 35. ).

  With such a configuration, the atmosphere around the external suction port 102 can be sucked through the suction paths 101 and 105 by performing gas suction from the suction source 107. Hereinafter, a configuration having the suction paths 101 and 105, the external suction port 102, and the suction source 107 and sucking the atmosphere around the external suction port 102 is collectively referred to as “suction unit 100”.

<Air supply unit 60, exhaust unit 65>
An air supply path 61 for supplying an inert gas to the inside of the lamp housing 40 is formed in the lid 41. One end of the air supply path 61 is connected to an air supply port 62 that opens in the lamp housing 40 on the lower surface of the lid 41. The other end of the air supply path 61 is connected to an inert gas supply source 64 provided outside the chemical liquid discharge head 35.

  With such a configuration, the inert gas is supplied from the supply port 61 into the lamp housing 40 through the supply passage 61 by supplying the inert gas from the inert gas supply source 64. be able to. Hereinafter, a configuration that includes the air supply path 61, the air supply port 62, and the inert gas supply source 64 and supplies the inert gas into the lamp housing 40 is collectively referred to as “air supply unit 60”. .

  An exhaust path 66 for exhausting the atmosphere inside the lamp housing 40 is formed in the lid 41. One end of the exhaust path 66 is connected to an exhaust port 67 that opens into the lamp housing 40 on the lower surface of the lid 41. The other end of the exhaust path 66 is connected to an exhaust source 69 provided outside the chemical liquid discharge head 35.

  Since the exhaust gas is exhausted from the exhaust source 69, the atmosphere in the lamp housing 40 can be exhausted from the exhaust port 67 through the exhaust path 66. Hereinafter, the configuration having the exhaust path 66, the exhaust port 67, and the exhaust source 69 and exhausting the atmosphere in the lamp housing 40 is collectively referred to as an “exhaust portion 65”.

  The atmosphere in the lamp housing 40 can be ventilated by exhausting the atmosphere in the lamp housing 40 by the exhaust part 65 while supplying the inert gas into the lamp housing 40 by the air supply part 60. For example, in the case where the ventilation is performed after the atmosphere in the lamp housing 40 is heated to a high temperature by heating the infrared lamp 38, the atmosphere inside the lamp housing 40 is replaced with an inert gas at room temperature by the ventilation, so that the infrared lamp 38 and the lamp housing are replaced. 40 can be cooled.

  For example, nitrogen gas or argon gas is used as the inert gas. Moreover, you may replace the said internal atmosphere of the lamp housing 40 using air instead of an inert gas.

<Configuration of supply unit 13>
As shown in FIG. 1, the supply unit 13 for supplying the SPM liquid to the chemical solution distribution pipe 4 includes a mixing unit 14 for mixing sulfuric acid and hydrogen peroxide solution, a mixing unit 14, and the chemical solution distribution pipe 4. And a supply pipe 15 connected between the two.

  A sulfuric acid supply pipe 16 and a hydrogen peroxide solution supply pipe 17 are connected to the mixing unit 14. The sulfuric acid supply pipe 16 is supplied with sulfuric acid (H 2 SO 4) whose temperature is adjusted to a predetermined temperature (for example, about 80 ° C.) from the sulfuric acid supply source 16A. On the other hand, the hydrogen peroxide solution supply pipe 17 is supplied with hydrogen peroxide solution (H 2 O 2) at about room temperature (about 25 ° C.) that is not temperature-controlled from the hydrogen peroxide solution supply source 17A. A sulfuric acid valve 18 and a flow rate adjusting valve 19 are interposed in the middle of the sulfuric acid supply pipe 16. A hydrogen peroxide water valve 20 and a flow rate adjusting valve 21 are interposed in the middle of the hydrogen peroxide water supply pipe 17.

  In the middle of the supply pipe 15, a stirring flow pipe 22 and a stripping solution valve 23 are interposed in this order from the mixing section 14 side. The stirring flow pipe 22 includes, for example, a plurality of stirring fins each formed of a rectangular plate with a twist of about 180 degrees about the liquid flow direction in the pipe member around the central axis of the pipe along the liquid flow direction. It has a configuration in which the rotation angles are alternately changed by 90 degrees.

  When the sulfuric acid valve 18 and the hydrogen peroxide solution valve 20 are opened while the stripping solution valve 23 is opened, the sulfuric acid from the sulfuric acid supply tube 16 and the hydrogen peroxide solution from the hydrogen peroxide solution supply tube 17 are mixed. 14 and flows out from the mixing section 14 to the supply pipe 15. The sulfuric acid and the hydrogen peroxide solution are sufficiently agitated by passing through the agitation flow pipe 22 while flowing through the supply pipe 15. By the stirring when passing through the stirring flow pipe 22, the sulfuric acid and the hydrogen peroxide solution sufficiently react to generate an SPM liquid containing a large amount of peroxomonosulfuric acid (H2SO5). The SPM liquid is heated to a temperature higher than the liquid temperature of sulfuric acid supplied to the mixing unit 14 by the reaction heat between sulfuric acid and hydrogen peroxide. The high-temperature SPM liquid is supplied to the chemical liquid distribution pipe 4 through the supply pipe 15.

  In this embodiment, sulfuric acid is stored in a sulfuric acid tank of the sulfuric acid supply source 16A, and the sulfuric acid in the sulfuric acid tank is adjusted to a predetermined temperature (for example, about 80 ° C.) by a temperature controller (not shown). The sulfuric acid stored in the sulfuric acid tank is supplied to the sulfuric acid supply pipe 16. In the mixing unit 14, sulfuric acid at about 80 ° C. and hydrogen peroxide solution at room temperature are mixed to generate an SPM liquid at about 140 ° C.

<Control unit 55>
FIG. 5 is a block diagram showing an electrical configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 further includes a control unit 55 that controls each unit of the substrate processing apparatus 1. The control unit 55 is configured by, for example, a general computer in which a CPU, a ROM, a RAM, a storage device, and the like are interconnected via a bus line.

  The control unit 55 includes a motor 6, an amplifier 54, a swing drive mechanism 36, a lift drive mechanism 37, a liquid arm swing mechanism 29, a sulfuric acid valve 18, a hydrogen peroxide solution valve 20, a stripping solution valve 23, a DIW valve 27, The SC1 valve 31, the flow rate adjusting valves 19, 21 and the like are connected as control targets.

<1.2 Operation of Substrate Processing Apparatus 1>
FIG. 6 is a flowchart showing an operation example of resist removal processing in the substrate processing apparatus 1.

  7 and 8 are top views showing the movement range of the chemical liquid ejection head 35 in a resist removal process to be described later.

  Hereinafter, an operation example of the resist removal process will be described.

  First, a transfer robot (not shown) is controlled, and the wafer W after the ion implantation process is loaded into the processing chamber 2 (FIG. 1) (step ST1). Hereinafter, as an example, a case will be described in which the resist film formed on the processing surface of the wafer W is not subjected to the ashing process and the resist film formed on the processing surface of the wafer W is hydrophobic.

  The wafer W is transferred to the wafer rotation mechanism 3 so that its processing surface becomes the upper surface S1. At this time, the chemical liquid discharge head 35 and the SC1 nozzle 25 are each disposed at the home position so as not to hinder the loading of the wafer W.

  When the wafer W is held by the wafer rotation mechanism 3, the control unit 55 controls the motor 6 to start the rotation of the wafer W. The rotation speed of the wafer W is increased to a predetermined rotation speed (in the range of 30 to 300 rpm, for example, 60 rpm), and then maintained at the rotation speed (step ST2).

  Then, by supplying a high-temperature SPM liquid toward the upper surface S1 of the rotating wafer W, the resist film formed on the upper surface S1 of the wafer W is removed (resist removal process: step ST3).

  In the resist removal process, the control unit 55 controls the swing drive mechanism 36 to move the chemical liquid discharge head 35 to the processing position, and controls the lift drive mechanism 37 to move the arm 34 up and down. As a result, the chemical liquid ejection head 35 is brought into a close position (position indicated by a two-dot chain line in FIG. 1), and a small gap is maintained between the lower surface 529 of the bottom plate portion 52 of the chemical liquid ejection head 35 and the upper surface S1 of the wafer W. It is. For example, the distance between the lower surface 529 of the bottom plate portion 52 and the upper surface S1 of the wafer W is adjusted to 3 mm, and the distance between the lower end of the skirt portion 81 and the upper surface S1 of the wafer W is adjusted to 1 mm.

  Then, the control unit 55 controls the swing drive mechanism 36 to rotate the arm 34 around the support shaft 33. Specifically, the chemical liquid discharge head 35 held at the tip of the arm 34 is reciprocated between the first position (FIG. 7) and the second position (FIG. 8). Here, the “first position” means that the central discharge port 80 of the plurality of discharge ports 80 provided in a row in the chemical liquid discharge head 35 is directly above the rotation center of the wafer W held by the wafer rotation mechanism 3. (FIG. 7). Further, the “second position” is a position where a part of the horizontal portion 44 of the chemical liquid discharge head 35 is disposed immediately above a part of the edge of the wafer W held by the wafer rotating mechanism 3 (FIG. 8). It is.

  The control unit 55 controls to open the sulfuric acid valve 18, the hydrogen peroxide solution valve 20, and the stripping solution valve 23, and supplies the SPM solution to the chemical solution circulation pipe 4.

  The control unit 55 controls the amplifier 54 to emit infrared rays from the two infrared lamps 38.

  By this infrared irradiation, the fourth pipe 404 of the chemical liquid circulation pipe 4 disposed between the horizontal portions 44 of the two infrared lamps 38 is heated. Then, the SPM liquid heated and heated in the course of flowing through the chemical liquid distribution pipe 4 (particularly the fourth pipe line 404) is discharged from the discharge port 80 and supplied to the upper surface S1 of the rotating wafer W.

  Further, the heat treatment space HL below the horizontal portion 44 of the two infrared lamps 38 is heated by the infrared irradiation.

  FIG. 9 is a side view showing the state of the chemical liquid ejection head 35 and the wafer W during the resist removal process.

  The SPM liquid discharged from the plurality of discharge ports 80 toward the heat treatment space HL is deposited on the upper surface S1 of the wafer W. Further, since the wafer W is rotating, the SPM liquid deposited on the upper surface S1 of the wafer W is diffused along the upper surface S1 of the wafer W by the centrifugal force of rotation.

  In the present embodiment, since the horizontal portions 44 (heating portions) of the infrared lamps 38 are arranged on both sides in the horizontal direction of the plurality of discharge ports 80 provided in the fourth pipeline 404, the rotation is performed after being discharged from the discharge ports 80. The SPM liquid that diffuses along the upper surface S <b> 1 of the wafer W due to the centrifugal force can be efficiently heated by the horizontal portion 44.

  Further, in the resist removal process, as described above, the space between the lower surface 529 of the bottom plate portion 52 of the chemical liquid ejection head 35 and the upper surface S1 of the wafer W is kept at a minute interval, and the side is a skirt portion. 81. Therefore, the skirt portion 81 functions as a fluid barrier for the SPM liquid that diffuses along the upper surface S1 of the wafer W. As a result, at least part of the SPM liquid discharged from the plurality of discharge ports 80 is held in the heat treatment space HL by the skirt portion 81 (damped state).

  In this state, the horizontal portions 44 of the two infrared lamps 38 heat the SPM liquid held in the heat treatment space HL. Since the heat treatment space HL is partitioned from the space outside the skirt portion 81 by the skirt portion 81, the SPM liquid held and heated in the heat treatment space HL is difficult to touch the outside air and hardly radiates heat.

  Thus, when the upper surface S1 of the wafer W continues to be covered with the heated SPM liquid, the reaction between the resist film formed on the upper surface S1 of the wafer W and the SPM liquid proceeds, and the resist from the upper surface S1 of the wafer W moves. Peeling progresses.

  As a result, even a resist having a hardened layer can be removed from the upper surface S1 of the wafer W without ashing. Since resist ashing is unnecessary, the problem of damage to the upper surface S1 of the wafer W due to ashing can be avoided.

  The peeled resist is diffused together with the SPM liquid by the centrifugal force of the rotation of the wafer W, and flows out of the heat treatment space HL from between the lower end of the skirt portion 81 and the upper surface S1 of the wafer W.

  Further, as described above, the external suction port 102 is formed along the outer periphery of the skirt portion 81. For this reason, the atmosphere (for example, fumes generated based on the resist and the SPM liquid) formed by the resist and the SPM liquid flowing out of the heat treatment space HL can be sucked from the external suction port 102 by the suction unit 100. . Therefore, it is possible to effectively prevent each part of the substrate processing apparatus 1 and the wafer W to be processed from being contaminated by the atmosphere.

  The periphery of the infrared lamp 38 is covered with a lamp housing 40, and the upper opening of the lamp housing 40 is closed with a lid 41. For this reason, it is possible to suppress an adverse effect on the infrared lamp 38 due to the atmosphere formed by the resist and the SPM liquid flowing out of the heat treatment space HL entering the lamp housing 40 during the resist removal process. it can. Further, since it is possible to suppress the droplets of the SPM liquid from adhering to the wall of the quartz tube of the infrared lamp 38, the amount of infrared light emitted from the infrared lamp 38 can be stably maintained over a long period of time.

  In the resist removal process (step ST3), as described above, the chemical liquid ejection head 35 is reciprocated between the first position (FIG. 7) and the second position (FIG. 8).

  Due to the reciprocating movement of the chemical liquid ejection head 35 and the rotation of the wafer W, the entire range above the wafer W is scanned by the chemical liquid ejection head 35. Since the resist peeling on the upper surface S1 of the wafer W proceeds in the heat treatment space HL formed below the chemical liquid discharge head 35, the entire area above the wafer W is scanned by the chemical liquid discharge head 35, whereby the wafer is scanned. The resist is peeled in the entire range of the upper surface S1 of W.

  In general, air replacement due to rotation of the wafer W is more easily performed at the peripheral portion of the wafer W than at the center side of the wafer W. For this reason, there is a problem that the temperature of the peripheral portion of the wafer W is lower than that of the central side due to the heat radiation due to air substitution, and resist peeling by the SPM liquid is difficult to proceed at the peripheral portion of the wafer W.

  In the present embodiment, the skirt portion 81 is formed in an arc shape in a horizontal view, and corresponds to a part of the skirt part 81 and a part of the peripheral edge of the wafer W. Therefore, the heat treatment space HL can be formed at the peripheral edge of the wafer W by moving the chemical liquid ejection head 35 to the second position (FIG. 8), and the above-described problems can be solved.

  In the present embodiment, the horizontal portion 44 (heating portion) of the infrared lamp 38 is formed in an arc shape in a horizontal plane view, and a part of the horizontal part 44 and a part of the peripheral edge of the wafer W are formed. Corresponds. For this reason, the peripheral portion of the upper surface S1 of the wafer W, the temperature of which is likely to decrease due to the effect of heat radiation due to air replacement, is moved by the horizontal portion 44 of the infrared lamp 38 by moving the chemical liquid discharge head 35 to the second position (FIG. 8). It can be heated well to solve the above problems.

  Then, when a predetermined time has elapsed, the control unit 55 closes the sulfuric acid valve 18 and the hydrogen peroxide water valve 20. The control unit 55 controls the amplifier 54 to stop the infrared irradiation from the infrared lamp 38. Further, the control unit 55 controls the swing drive mechanism 36 and the lift drive mechanism 37 to return the chemical liquid discharge head 35 to the home position.

  Then, the control unit 55 controls the motor 6 to increase the rotation speed of the wafer W to a predetermined liquid processing rotation speed (in the range of 300 to 1500 rpm, for example, 1000 rpm), and opens the DIW valve 27 to open the DIW nozzle. DIW is supplied from the 24 discharge ports toward the vicinity of the rotation center of the wafer W (step ST4).

  The DIW supplied to the upper surface S1 of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the upper surface S1 of the wafer W toward the periphery of the wafer W. Thereby, the SPM liquid adhering to the upper surface S1 of the wafer W is washed away by DIW.

  When the supply of DIW is continued for a predetermined time, the DIW valve 27 is closed and the supply of DIW to the upper surface S1 of the wafer W is stopped.

  While maintaining the rotational speed of the wafer W at the liquid processing rotational speed, the controller 55 opens the SC1 valve 31 and supplies SC1 from the SC1 nozzle 25 to the upper surface S1 of the wafer W (step ST5). Further, the control unit 55 controls the liquid arm swing mechanism 29 to swing the liquid arm 28 within a predetermined angle range so that the SC1 nozzle 25 is placed between the rotation center of the wafer W and the peripheral portion. Move back and forth with. As a result, the supply position on the upper surface S1 of the wafer W to which SC1 is guided from the SC1 nozzle 25 is in an arc shape that intersects the rotation direction of the wafer W within a range from the rotation center of the wafer W to the peripheral edge of the wafer W. Move back and forth while drawing the trajectory. Thereby, SC1 is supplied uniformly over the entire upper surface S1 of the wafer W, and foreign substances such as resist residues and particles adhering to the upper surface S1 of the wafer W can be removed by the chemical ability of the SC1.

  When the supply of SC1 is continued for a predetermined time, the controller 55 closes the SC1 valve 31 and controls the liquid arm swing mechanism 29 to return the SC1 nozzle 25 to the home position. Further, in a state where the rotation speed of the wafer W is maintained at the liquid processing rotation speed, the control unit 55 opens the DIW valve 27 and supplies DIW from the discharge port of the DIW nozzle 24 toward the vicinity of the rotation center of the wafer W. (Step ST6). The DIW supplied to the upper surface S1 of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the upper surface S1 of the wafer W toward the periphery of the wafer W. Thereby, SC1 adhering to the upper surface S1 of the wafer W is washed away by DIW.

  When the supply of DIW is continued for a predetermined time, the control unit 55 closes the DIW valve 27 and stops the supply of DIW to the upper surface S1 of the wafer W. Thereafter, the control unit 55 drives the motor 6 to increase the rotation speed of the wafer W to a predetermined high rotation speed (for example, 1500 to 2500 rpm). By this high speed rotation, the DIW adhering to the wafer W is shaken off and the wafer W is dried (step ST7).

  When the spin dry process (step ST7) is performed for a predetermined time, the controller 55 drives the motor 6 to stop the rotation of the wafer rotation mechanism 3 (step ST8). As a result, the resist removal process for one wafer W is completed, and the processed wafer W is unloaded from the processing chamber 2 by a transfer robot (not shown) (step ST9).

<1.3 Effects of the substrate processing apparatus 1>
(1) As described above, in the present embodiment, a voltage is applied to the infrared lamp 38 by the amplifier 54 while supplying the SPM liquid to the chemical solution distribution pipe 4, so that the horizontal part 44 (heating part) of the infrared lamp 38. Thus, it is possible to simultaneously heat both the SPM liquid flowing inside the fourth pipe line 404 (heated pipe line section) and the SPM liquid discharged to the upper surface S1 of the wafer W.

  For this reason, space and energy savings can be achieved compared to a configuration in which a heating unit that heats the SPM liquid flowing inside the chemical liquid circulation pipe 4 and a heating unit that heats the SPM liquid discharged to the upper surface S1 of the wafer W are provided separately. realizable.

  (2) In the configuration in which the fourth pipe 404 (heated pipe section) and the horizontal part 44 (heating part) are arranged in the same horizontal plane as in this embodiment (FIG. 4), the horizontal part 44 Compared to the configuration in which is disposed above the fourth pipe 404, the arrangement interval between the horizontal portion 44 and the wafer W can be shortened, and the heating efficiency of the horizontal portion 44 to the upper surface S1 of the wafer W is improved. Rise.

  In addition, the lamp housing 40, the skirt portion 81, and the chemical solution distribution pipe 4 are formed using heat-resistant quartz. Therefore, the lamp housing 40 and the chemical solution distribution pipe 4 are formed by infrared irradiation from the horizontal portion 44. Even if it is partially heated to about 300 ° C., there is little risk of destruction or melting.

<2 Second Embodiment>
The substrate processing apparatus 1A of the second embodiment is different from the substrate processing apparatus 1 of the first embodiment in the configuration of the chemical liquid ejection head 35A, and the remaining configuration is the same as in the first embodiment. Hereinafter, the substrate processing apparatus 1A according to the second embodiment will be described. However, the same elements as those in the first embodiment are denoted by the same reference numerals, and redundant description will be omitted.

  FIG. 10 is a perspective view showing a schematic configuration of the chemical liquid ejection head 35A. FIG. 11 is a longitudinal sectional view of the chemical liquid ejection head 35A viewed from the BB section in FIG. 12 and 13 are cross-sectional views of the chemical liquid ejection head 35A viewed from the CC cross section and the DD cross section in FIG.

  As shown in FIGS. 10 to 13, the chemical liquid discharge head 35 </ b> A has a total of 2 arranged in parallel with the chemical liquid distribution pipe 4 </ b> A for feeding the SPM liquid and a part of the chemical liquid distribution pipe 4 </ b> A (heated pipeline section 405). This is a substantially rectangular parallelepiped head including an infrared lamp 38A.

<Chemical liquid distribution piping 4A>
The chemical liquid distribution pipe 4A has an upstream end connected to the supply pipe 15 and a first pipe line 401 for feeding the SPM liquid through the inside of the arm 34 and the inside of the chemical liquid discharge head 35A, and the inside of the chemical liquid discharge head 35A. , The second pipeline 402 and the third pipeline 403 branched from the first pipeline 401, and the fourth pipeline 404A to which the downstream ends of the second pipeline 402 and the third pipeline 403 are respectively connected. Are provided in this order from the upstream side.

  The fourth duct 404A is a duct extending in a horizontal plane, and is arranged inside the bottom plate portion 52A of the lamp housing 40A. Further, the fourth pipeline 404A is a rectangular annular pipeline in a horizontal plan view.

  FIG. 14 is a longitudinal sectional view showing the positional relationship between the fourth pipeline 404A and the bottom plate portion 52A.

  The bottom plate portion 52 </ b> A of the second embodiment includes an upper plate member 521 and a lower plate member 522.

  The upper plate member 521 has a semicircular groove 523 formed on the lower surface side thereof. The lower plate member 522 has a semicircular groove 524 formed on the upper surface side thereof, a plurality of discharge ports 80 that are formed to extend downward from the groove 524 and open to the lower surface 529A of the lower plate member 522, Have Further, the groove 523 of the upper plate member 521 and the groove 524 of the lower plate member 522 are formed in a rectangular ring having the same size in the horizontal plane view.

  Thus, since the grooves 523 and 524 are formed so as to correspond to each other in both the longitudinal sectional shape and the transverse sectional shape, the upper plate member 521 and the lower plate member 522 are moved up and down so that the grooves 523 and 524 overlap in a horizontal view. By joining in the direction, the bottom plate portion 52A is formed. Further, a pipe formed by combining the grooves 523 and 524 functions as the fourth pipe 404A.

  Since it is configured as described above, the SPM liquid supplied from the supply pipe 15 to the chemical liquid circulation pipe 4A is either the first pipe line 401, the second pipe line 402, or the third pipe line 403, and After the liquid is fed in the order of the fourth pipe 404A, the liquid is discharged from a plurality of discharge ports 80 provided in the fourth pipe 404A toward the upper surface S1 of the wafer W held by the wafer rotating mechanism 3.

  In the second embodiment, since the fourth pipe 404A of the chemical liquid circulation pipe 4 is formed inside the bottom plate portion 52A, the chemical liquid is compared with a configuration in which the fourth pipe 404A is provided outside the bottom plate portion 52A. The discharge head 35A can be reduced in size.

<Infrared lamp 38A>
The chemical liquid discharge head 35A accommodates and holds two infrared lamps 38A.

  Each of the two infrared lamps 38A has two vertical portions 43 extending in the vertical direction and a horizontal portion 44A that extends in the horizontal direction and linearly connects the lower ends of the two vertical portions 43. It is a U-shaped lamp in view. Hereinafter, a configuration in which only the linear horizontal portion 44A is heated (that is, a configuration in which the filament is disposed only in the horizontal portion 44A) will be described.

  Moreover, a part (heated pipe line section 405) of the fourth pipe line 404A of the chemical liquid circulation pipe 4A is disposed immediately below the horizontal part 44A of the two infrared lamps 38A. For this reason, when a voltage is applied from the amplifier 54 to the two infrared lamps 38A, the horizontal portions 44A of the two infrared lamps 38A irradiate infrared rays, and 2 are arranged immediately below the horizontal portions 44A of the two infrared lamps 38A. Two heated line sections 405 are heated.

  When the flow rate of the SPM liquid per unit time is the same, the configuration in which a plurality of heated pipeline sections are arranged in parallel is compared to the configuration in which one or a plurality of heated pipeline sections are arranged in series. The total surface area of the processing liquid flowing through the heated pipeline section is large. For this reason, in the configuration in which a plurality of heated pipeline sections are arranged in parallel as in the second embodiment, the SPM liquid flowing in the heated pipeline sections can be efficiently heated by infrared irradiation.

  By the infrared irradiation from the horizontal portion 44A, the tube walls of the two heated pipeline sections 405 are heated to about 300 ° C., for example. In this state, when the SPM liquid is supplied from the supply pipe 15 to the chemical liquid distribution pipe 4A, the SPM liquid flowing through the chemical liquid distribution pipe 4A is heated from the pipe walls of the two heated channel sections 405 and irradiated with infrared rays. The two horizontal portions 44A are heated. As a result, the SPM liquid having a high temperature is discharged from the plurality of discharge ports 80 provided in the fourth pipeline 404A.

  As described above, also in the second embodiment, the horizontal portion 44A (heating unit) of the two infrared lamps 38A extends along the fourth pipeline 404A (particularly, the two heated pipeline sections 405) of the chemical solution circulation piping 4A. They are arranged in parallel. Therefore, as in the first embodiment, the horizontal portion 44A of the infrared lamp 38A makes the SPM liquid flowing inside the fourth conduit 404 (particularly, the two heated conduit sections 405) of the chemical fluid distribution pipe 4A more uniform. Can be heated.

<Bottom plate portion 52A, skirt portion 81A>
The bottom plate portion 52A and the skirt portion 81A are formed in a rectangle when viewed in a horizontal plane.

  In the lamp housing 40A, the horizontal portion 44A of the two infrared lamps 38A and the upper surface 528A of the bottom plate portion 52A are disposed horizontally. For this reason, the bottom plate portion 52A can be more uniformly heated by the horizontal portion 44A of the infrared lamp 38A.

  Further, the horizontal portion 44A and the upper surface 528A of the bottom plate portion 52A are arranged close to each other so that the vertical distance between them is, for example, about 2 mm. In particular, in the second embodiment, since the heated pipe section 405 (a part of the fourth pipe 404A) is formed inside the bottom plate portion 52A, the horizontal portion 44A and the bottom plate portion 52A are arranged close to each other. For example, both the bottom plate portion 52A and the heated pipeline section 405 can be efficiently heated by the horizontal portion 44A. By this infrared irradiation, the bottom plate portion 52A of the lamp housing 40A is heated to about 300 ° C., for example.

  Further, the wafer W held by the wafer rotating mechanism 3 is also in a horizontal posture, like the horizontal portion 44A and the bottom plate portion 52A. For this reason, the upper surface S1 of the wafer W held by the wafer rotation mechanism 3 can be more uniformly heated by both the horizontal portion 44A and the bottom plate portion 52A.

  The skirt portion 81A is a portion that extends from the chemical liquid ejection head 35A side so as to protrude downward from the lower surface 529A of the bottom plate portion 52A. The skirt portion 81A is provided along the outer periphery of the lower surface 529A and has a rectangular shape in a horizontal plane view.

<3 Third Embodiment>
The substrate processing apparatus 1B of the third embodiment is different from the substrate processing apparatus 1 described above in the configuration of the chemical liquid discharge head 35B, and the remaining configuration is the same as that in the first embodiment. Below, although the substrate processing apparatus 1B of 3rd Embodiment is demonstrated, the same code | symbol is attached | subjected about the element same as 1st Embodiment, and duplication description is abbreviate | omitted.

  FIG. 15 is a perspective view showing a schematic configuration of the chemical liquid ejection head 35B. FIG. 16 is a longitudinal sectional view of the chemical liquid discharge head 35B. FIG. 17 is a cross-sectional view of the chemical liquid ejection head 35 </ b> B viewed from the EE cross section in FIG. 16.

  As shown in FIGS. 15 to 17, the chemical liquid discharge head 35 </ b> B includes a chemical liquid distribution pipe 4 </ b> B configured to have a substantially circular shape in a horizontal plan view, and an infrared lamp 38 </ b> B arranged in parallel with the chemical liquid distribution pipe 4 </ b> B. A substantially cylindrical head.

<Chemical liquid distribution pipe 4B>
The chemical solution distribution pipe 4B includes an arc-shaped (substantially annular) annular portion 406 (heated pipeline section) arranged in a horizontal plane, and a central axis (vertical) of the annular portion 406 from both ends of the annular portion 406, respectively. A pair of straight portions 407 and 408 extending upward along the axis). The straight portions 407 and 408 pass through the lid 41 in the vertical direction through an insertion hole provided in the lid 41 of the chemical liquid discharge head 35, and the annular portion 406 connected to the lower ends of the straight portions 407 and 408 is the chemical liquid discharge head. 35 is arranged inside.

  A supply pipe 15 is connected to the upper ends of the straight portions 407 and 408. Further, the annular portion 406 is disposed in proximity to the bottom plate portion 52B disposed below the annular portion 406, and a plurality of discharge ports 80 are formed in the annular portion 406. Each of the plurality of discharge ports 80 penetrates the tube wall of the annular portion 406 extending in the horizontal direction downward and penetrates the bottom plate portion 52B of the lamp housing 40B, and extends downward from the lower surface 529B of the bottom plate portion 52B. Open.

  Since it has such a configuration, after the SPM liquid supplied from the supply pipe 15 to the chemical liquid circulation pipe 4B is fed in the order of either the straight part 407 or 408 and the annular part 406, It discharges toward the upper surface S1 of the wafer W hold | maintained at the wafer rotation mechanism 3 from the some discharge port 80 provided in the annular part 406. FIG.

<Infrared lamp 38B>
The chemical liquid discharge head 35B accommodates and holds one infrared lamp 38B.

  The infrared lamp 38B has an arcuate (substantially annular) horizontal portion 44B arranged in a horizontal plane and a pair of vertical portions extending upward from both ends of the horizontal portion 44B along the central axis (vertical axis) of the horizontal portion 44B. A lamp heater having a portion 43.

  Below, the structure which only the horizontal part 44B heats (that is, the structure by which a filament is arrange | positioned only in the horizontal part 44B) is demonstrated.

  On the side of the horizontal part 44B of the infrared lamp 38B, an annular part 406 (heated pipe line section) of the chemical liquid circulation pipe 4 is arranged. For this reason, when a voltage is applied from the amplifier 54 to the two infrared lamps 38B, the horizontal portion 44B of the two infrared lamps 38B irradiates infrared rays. By this infrared irradiation, the annular portion 406 (heated pipeline section) disposed on the side of the horizontal portion 44B of the two infrared lamps 38B is heated.

  Due to the infrared irradiation from the horizontal portion 44B, the tube wall of the annular portion 406 is heated to about 300 ° C., for example. In this state, when the SPM liquid is supplied from the supply pipe 15 to the chemical liquid distribution pipe 4B, the SPM liquid flowing through the chemical liquid distribution pipe 4B is heated from the tube wall of the annular portion 406 and is irradiated with infrared rays. Heated from the horizontal portion 44B. As a result, the heated SPM liquid is discharged from the plurality of discharge ports 80 provided in the annular portion 406.

  Thus, also in 3rd Embodiment, the horizontal part 44B (heating part) of the infrared lamp 38B is arrange | positioned in parallel along the annular part 406 (to-be-heated channel area) of the chemical | medical solution distribution piping 4B. For this reason, as in the first embodiment, the SPM liquid flowing in the annular portion 406 (heated pipeline section) of the chemical solution circulation pipe 4B can be more uniformly heated by the horizontal portion 44B of the infrared lamp 38B.

  In addition, as shown in FIG. 17, the plurality of discharge ports 80 provided in the annular part 406 are surrounded by the horizontal part 44 </ b> B (heating part) in a horizontal plan view. For this reason, in the resist removal process, the SPM liquid that has landed on the upper surface S1 of the wafer W and diffused along the upper surface S1 of the wafer W by the centrifugal force of rotation can be efficiently heated by the horizontal portion 44B.

<Bottom plate part 52B, skirt part 81B>
The bottom plate portion 52B and the skirt portion 81B are formed in a substantially circular shape when viewed in a horizontal plane.

  In the lamp housing 40B, the horizontal portion 44B of the infrared lamp 38B and the upper surface 528B of the bottom plate portion 52B are arranged horizontally.

  Further, the horizontal portion 44B and the upper surface 528B of the bottom plate portion 52B are arranged close to each other so that the vertical distance between them is, for example, about 2 mm. As a result, the horizontal portion 44B functioning as a heating unit and the upper surface S1 of the wafer W to be heated are brought close to each other, so that the upper surface S1 of the wafer W can be more efficiently heated by the horizontal portion 44B.

  Further, the wafer W held by the wafer rotating mechanism 3 is also in a horizontal posture, like the horizontal portion 44B and the bottom plate portion 52B. For this reason, the upper surface S1 of the wafer W held by the wafer rotation mechanism 3 can be more uniformly heated by both the horizontal portion 44B and the bottom plate portion 52B.

  The skirt portion 81B is a portion extending from the chemical liquid ejection head 35B side so as to protrude downward from the lower surface 529B of the bottom plate portion 52B. The skirt portion 81B is provided along the outer periphery of the lower surface 529B and has a circular shape in the horizontal plane view.

<4 Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention.

  In each of the above embodiments, the substrate processing apparatuses 1, 1A, and 1B that perform the resist removal processing using the SPM solution as the resist stripping solution have been described. However, the substrate processing apparatus to which the present invention can be applied is not limited thereto. . The present invention relates to various substrate processing apparatuses that perform processing using a chemical solution on the upper surface by holding a high temperature chemical solution on the upper surface of the substrate, such as a substrate processing apparatus that performs selective etching processing of a nitride film or the like using high-temperature phosphoric acid. Is applicable.

  Further, in the intermediate rinsing process in step ST4 and the rinsing process in step ST6, the rinse liquid is not limited to DIW described in the first embodiment, but is carbonated water, electrolytic ion water, ozone water, reduced water (hydrogen water). Various other processing liquids such as magnetic water can also be employed.

  In each of the above-described embodiments, the configuration in which the plurality of discharge ports 80 are arranged in the section to be heated is described, but the present invention is not limited to this.

  For example, like the chemical liquid discharge head 35C shown in FIG. 18, one discharge port 80 may be formed downstream of the heated pipe section 405C in the fourth pipe 404C of the chemical liquid distribution pipe 4C. In this case, the SPM liquid heated by the horizontal portion 44C of the infrared lamp 38C is discharged from the discharge port 80 in the process of flowing through the entire heated pipe section 405C. Therefore, the SPM liquid that has been sufficiently heated can be supplied to the upper surface S1 of the wafer W. Further, if the configuration in which one discharge port 80 is formed as in the present modification, unlike the configuration in which a plurality of discharge ports 80 are formed as in the above embodiments, the discharge is performed from each discharge port 80. The temperature of the SPM liquid does not become uneven. Therefore, in the present modification, the heated SPM liquid can be supplied toward the upper surface S1 of the wafer W at a uniform temperature. On the other hand, in the configuration in which the plurality of ejection openings 80 are formed as in the above embodiments, the SPM liquid can be supplied to the upper surface S1 of the wafer W in a diffusive manner (in the form of a shower). For this reason, in the configuration of each of the embodiments described above, the SPM liquid can be supplied more uniformly to the upper surface S1 of the wafer W than in the configuration of the present modification.

  Further, as in the chemical liquid discharge head 35D shown in FIG. 19, in the heated pipe section 405D of the fourth pipe 404D of the chemical liquid distribution pipe 4D, the first portion 111 on the upstream side where the SPM liquid flows is avoided and the downstream side. The second portion 112 may have a configuration in which a plurality of discharge ports 80 are formed in an array. In this case, the SPM liquid fed through the heated pipeline section 405D is sufficiently heated by the horizontal portion 44D of the infrared lamp 38D in the first portion 111 on the upstream side, and then the second portion 112 on the downstream side. The ink is discharged from the plurality of discharge ports 80 formed. For this reason, in the configuration of this modification, the SPM liquid that has been sufficiently heated is used for the wafer as compared with the configuration in which the discharge port 80 is also formed in the first portion 111 on the upstream side (for example, the configuration of each of the above embodiments). It can be supplied to the upper surface S1 of W.

  Moreover, as shown in FIG. 20, in addition to the structure of the chemical | medical solution distribution piping 4A and infrared lamp 38A of 2nd Embodiment, you may employ | adopt the chemical | medical solution discharge head 35E provided with the infrared lamp 38E. The infrared lamp 38E has an arcuate horizontal portion 44E in a horizontal plan view. Therefore, by moving the chemical liquid discharge head 35E to the second position (FIG. 8), the peripheral portion of the wafer W whose temperature is likely to be lowered due to the heat radiation due to air replacement is efficiently heated by the horizontal portion 44E of the infrared lamp 38E. It is possible to solve the general problem that resist stripping by the SPM liquid hardly progresses at the peripheral edge of the wafer W due to the temperature decrease.

  Further, as shown in FIG. 21, a chemical liquid discharge head 35F having a suction part 100F may be adopted. The suction part 100F is connected to the suction path 101F attached to the chemical liquid discharge head 35F, the external suction port 102 communicating with the suction path 101F and opening along the outer periphery of the skirt part 81, and the suction path 101F for heat treatment. It has an internal suction port 103 that opens inside the space HL. The suction path 101 </ b> F extends in the vertical direction along the chemical liquid discharge head 35 from the connection side to the suction source 107 and is branched into two at a branch point relatively fixed to the chemical liquid discharge head 35. The branch 101b communicates with the external suction port 102 as the first branch of the trunk 101a, and the branch 101c communicates with the internal suction 103 as the second branch of the trunk 101a. The suction unit 100F includes a suction path 105 that connects the suction path 101F and the suction source 107, and a suction source 107. With the above-described configuration, by sucking gas from the suction source 107, the ambient atmosphere of the external suction port 102 and the ambient atmosphere of the internal suction port 103 can be sucked through the suction paths 101F and 105. it can.

  During the resist removal process, an atmosphere formed by the resist and the SPM liquid (for example, fumes generated based on the resist and the SPM liquid) inside the heat treatment space HL can be sucked from the internal suction port 103. Further, an atmosphere (for example, fumes generated based on the resist and the SPM liquid) formed by the resist and the SPM liquid flowing out of the heat treatment space HL can be sucked from the external suction port 102. Therefore, it is possible to effectively prevent contamination of each part of the substrate processing apparatus and the wafer W to be processed by the atmosphere.

  In the chemical liquid ejection head 35F, branch passages 101c that connect the internal suction port 103 that opens to the inside of the heat treatment space HL and the trunk passage 101a are provided at a plurality of positions (at an equal interval in a horizontal view so as to penetrate the lamp housing 40). For example, 8 places) are formed. In particular, as in this modification, if the flow path portion from the internal suction port 103 through the branch path 101c to the main path 101a has a trap structure that moves up and down in the height direction (FIG. 21), the heat treatment space It is desirable because a liquid (SPM liquid, peeled resist, etc.) flowing inside the HL hardly flows into the main path 101a and the branch path 101b.

  Moreover, although each said embodiment demonstrated the case where the skirt part 81 was extended so that it might protrude below from the lower surface 529 of the baseplate part 52, it is not restricted to this. The skirt portion 81 only needs to be configured to extend from the side of the chemical liquid discharge head 35 so as to protrude downward from the lower surface 529 of the bottom plate portion 52. For example, the outer wall portion 75 like the chemical liquid discharge head 35G shown in FIG. The lower end portion may function as the skirt portion 81.

  The suction unit 100G of the chemical liquid ejection head 35G includes a suction path 101G, an external suction port 102, and an internal suction port 103. The suction path 101G includes a trunk path 101a, a branch path 101b that communicates with the external suction port 102 as a first branch of the trunk path 101a, and a branch path 101c that communicates with the internal suction port 103 as a second branch of the trunk path 101a. Have. The suction unit 100G includes a suction path 105 that connects the suction path 101G and the suction source 107, and a suction source 107. Since it is configured as described above, the ambient atmosphere of the external suction port 102 and the ambient atmosphere of the internal suction port 103 can be sucked through the suction paths 101G and 105 by performing gas suction from the suction source 107. . As a result, it is possible to effectively prevent each part of the substrate processing apparatus and the wafer W to be processed from being contaminated by the atmosphere.

  In the chemical liquid discharge head 35G, the branch passage 101b that connects the space between the lamp housing 40 and the outer wall portion 75 and the space opened to the outside of the outer wall portion 75 penetrates the outer wall portion 75 in the horizontal direction. A plurality of locations (for example, 8 locations) are formed at regular intervals in a horizontal plan view.

  23, the space sandwiched between the lamp housing 40 and the outer wall portion 75 is partitioned in the vertical direction by the middle wall portion 76, and the lower end portion of the middle wall portion 76 is the skirt portion 81. The structure which functions as may be sufficient. Like the lamp housing 40 and the outer wall 75, the middle wall 76 can be made of, for example, quartz.

  The suction part 100H of the chemical liquid discharge head 35H includes a suction path 101H that is a space between the outer wall part 75 and the middle wall part 76, and an external suction port 102 that opens along the outer periphery of the skirt part 81 below the suction path 101H. And have. The suction unit 100H includes a suction path 105 that connects the suction path 101H and the suction source 107, and a suction source 107. Since the configuration is as described above, the atmosphere around the external suction port 102 can be sucked through the suction paths 101H and 105 by performing gas suction from the suction source 107.

  The vent 110 of the chemical liquid discharge head 35H includes a vent path 109 that is a space between the middle wall 76 and the lamp housing 40, a vent 104 that opens to the inside of the heat treatment space HL below the vent path 109, and Have The ventilation portion 110 has a ventilation path 108 having one end connected in communication with the ventilation path 109 and the other end connected in communication with the external space of the chemical liquid ejection head 35H.

  Due to the above-described configuration, the atmosphere formed by the resist and the SPM liquid (for example, fumes generated based on the resist and the SPM liquid) inside the heat treatment space HL during the resist removal process is vented. The air can be exhausted from 104 through the ventilation paths 108 and 109. Thereby, it is possible to effectively prevent the inside of the heat treatment space HL from being filled with the above atmosphere, and the resist peeling on the upper surface S1 of the wafer W proceeds while the inside of the heat treatment space HL is filled with the high-temperature SPM liquid. Can do.

  Further, for example, the chemical liquid discharge heads 35 and 35A to 35H in the above embodiments are further provided with components (for example, chemical liquid flow paths for supplying a chemical liquid different from the SPM liquid) that are not explicitly described in the above embodiments. May be added.

  Further, the number of heated pipeline sections may be one as in the first and third embodiments, may be two as in the second embodiment, or may be three or more. It does not matter. Similarly, the number of other components can be arbitrarily changed.

  Further, in each of the above embodiments, the configuration in which the heated pipeline section is arranged at the same height position as the heating unit of the infrared lamp and the configuration in which the heated pipeline section is arranged immediately below the heating unit have been described. However, it is not limited to this. A configuration in which the heated pipeline section is disposed obliquely below the heating unit or a configuration in which the heated pipeline section is disposed above the heating unit may be employed. As described above, the arrangement relationship between the respective units can be arbitrarily changed.

  Although the substrate processing apparatus according to the embodiment and its modification has been described above, these are examples of the preferred embodiment of the present invention, and do not limit the scope of implementation of the present invention. Within the scope of the invention, the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or omitted with any component in each embodiment.

DESCRIPTION OF SYMBOLS 1,1A, 1B Substrate processing apparatus 3 Wafer rotation mechanism 4, 4A-4D Chemical solution distribution piping 35, 35A-35H Chemical solution discharge head 36 Oscillation drive mechanism 37 Lift drive mechanism 38, 38A-38E Infrared lamp 43 Vertical part 44, 44A ˜44E Horizontal portion 52, 52A to 52D Bottom plate portion 80 Discharge port 81, 81A to 81D Skirt portion 100 Suction portion 101, 101F to 101H Suction path 102 External suction port 103 Internal suction port 110 Ventilation portion 104 Ventilation port 109 Ventilation path 111 First 1 part 112 2nd part 405, 405C, 405D Heated pipeline section HL Heat treatment space S1 Upper surface W Wafer

Claims (20)

Substrate holding means for holding the substrate horizontally;
A chemical liquid discharge head disposed above the substrate held by the substrate holding means;
Have
The chemical liquid discharge head is
A chemical solution distribution pipe having a discharge port opened toward the upper surface of the substrate, sending a chemical solution supplied from a chemical solution supply source and discharging the chemical solution from the discharge port;
Heating that extends from the side of the chemical liquid ejection head so as to protrude downward from the lower surface of the chemical liquid ejection head and is sandwiched between the upper surface of the substrate held by the substrate holding means and the lower surface of the chemical liquid ejection head A skirt that surrounds the processing space;
A heating unit for heating the heat treatment space;
Have
The chemical liquid is supplied from the chemical liquid supply source to the chemical liquid distribution pipe, and at least a part of the chemical liquid discharged from the discharge port of the chemical liquid distribution pipe toward the heat treatment space is blocked by the skirt portion. In a state of being held inside the heat treatment space,
The substrate processing apparatus, wherein the heating unit heats the chemical solution held in the heat treatment space. Substrate holding means for holding the substrate horizontally;
A chemical liquid discharge head disposed above the substrate held by the substrate holding means;
Have
The chemical liquid discharge head is
A liquid distribution pipe having a discharge port opened on the lower surface of the chemical liquid discharge head toward the upper surface of the substrate, feeding a chemical liquid supplied from a chemical liquid supply source and discharging the chemical liquid from the discharge port;
The upper surface of the substrate that is provided along the outer periphery of the lower surface of the chemical liquid discharge head in a horizontal view, extends from the chemical liquid discharge head side so as to protrude downward from the lower surface, and is held by the substrate holding means. And a skirt that surrounds the heat treatment space sandwiched between the lower surface of the chemical liquid discharge head,
A heating unit for heating the heat treatment space;
Have
The chemical liquid is supplied from the chemical liquid supply source to the chemical liquid distribution pipe, and at least a part of the chemical liquid discharged from the discharge port of the chemical liquid distribution pipe toward the upper surface of the substrate is processed by the skirt portion. While being held inside the space,
The substrate processing apparatus, wherein the heating unit heats the chemical solution held in the heat treatment space. The substrate processing apparatus according to claim 1 or 2, wherein
A suction part having a gas suction channel attached to the chemical liquid discharge head, and an external suction port communicating with the gas suction channel and opening along the outer periphery of the skirt part;
Further comprising
A substrate processing apparatus for sucking an ambient atmosphere around the external suction port through the gas suction channel by performing gas suction from a gas suction source. The substrate processing apparatus according to claim 1 or 2, wherein
A gas suction channel attached to the chemical liquid discharge head; an external suction port that communicates with the gas suction channel and opens along an outer periphery of the skirt; and the heat treatment that communicates with the gas suction channel. A suction part having an internal suction port that opens inside the space;
Further comprising
The gas suction channel is
A trunk that extends along the chemical liquid discharge head from the connection side to the gas suction source and branches into a plurality at a branch point that is fixed relative to the chemical liquid discharge head;
A first branch communicating with the external suction port as a first branch of the trunk;
A second branch communicating with the internal suction port as a second branch of the trunk;
Have
A substrate processing apparatus, wherein a gas is sucked from a gas suction source to suck the ambient atmosphere of the external suction port and the ambient atmosphere of the internal suction port through the gas suction channel. The substrate processing apparatus according to claim 4,
A substrate processing apparatus, wherein a flow path portion extending from the internal suction port to the trunk path through the second branch has a trap structure that moves up and down in a height direction. A substrate processing apparatus according to any one of claims 1 to 3,
A ventilation portion having a ventilation opening that opens inside the heat treatment space, and a ventilation path that connects the ventilation hole and the external space of the chemical liquid ejection head in communication with each other;
The substrate processing apparatus further comprising: A substrate processing apparatus according to any one of claims 1 to 6,
A substrate processing apparatus, wherein at least a part of the skirt portion has an arc shape when viewed in a horizontal plane. A substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein the skirt portion is circular in a horizontal view. A substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein the skirt portion is rectangular in a horizontal view. A substrate processing apparatus according to any one of claims 1 to 9, wherein
An elevating part for elevating and lowering the chemical liquid discharge head;
The substrate processing apparatus further comprising: A substrate processing apparatus according to any one of claims 1 to 10,
The chemical solution distribution pipe has at least one heated pipeline section extending in a horizontal plane,
The heating unit is arranged in a horizontal plane along the heated pipeline section, the chemical solution fed through the heated pipeline section, and the discharge from the discharge port to the upper surface of the substrate A substrate processing apparatus that heats both chemicals. The substrate processing apparatus according to claim 11,
The substrate processing apparatus, wherein the heated pipeline section and the heating section are arranged in the same horizontal plane. The substrate processing apparatus according to claim 11 or 12,
The substrate processing apparatus, wherein the heated pipeline section is formed inside a bottom plate portion constituting a lower surface of the chemical liquid discharge head. A substrate processing apparatus according to any one of claims 11 to 13,
The substrate processing apparatus, wherein the heating unit is disposed on both sides of the discharge port of the chemical solution circulation pipe in a horizontal plane view. A substrate processing apparatus according to any one of claims 11 to 14,
The heating unit has infrared irradiation means,
A substrate processing apparatus, wherein at least a portion of the outer periphery of the heated pipeline section of the chemical solution distribution pipe facing the infrared irradiation means is covered with a black film. A substrate processing apparatus according to any one of claims 11 to 15,
The substrate processing apparatus, wherein the heating unit has an arc shape in a horizontal plan view. A substrate processing apparatus according to any one of claims 11 to 15,
The substrate processing apparatus, wherein the heating unit is linear in a horizontal plane view. A substrate processing apparatus according to any one of claims 11 to 17,
The substrate processing apparatus, wherein the chemical solution distribution pipe has a plurality of the heated pipeline sections arranged in parallel. A substrate processing apparatus according to any one of claims 11 to 18, comprising:
The substrate processing apparatus, wherein the chemical solution distribution pipe has a plurality of the discharge ports. The substrate processing apparatus according to claim 19,
The plurality of discharge ports are arranged in a second portion on the downstream side of the chemical solution while avoiding the first portion on the upstream side of the chemical solution in the heated pipeline section. Processing equipment.

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