JP5963298B2 - Substrate processing apparatus and heater cleaning method - Google Patents

Description

  The present invention relates to a substrate processing apparatus that includes an infrared lamp and includes a heater for performing heat treatment on a substrate, and a heater cleaning method for cleaning the heater. Examples of the substrate to be heat-treated include a semiconductor wafer, a glass substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. , Substrates such as photomask substrates, ceramic substrates, solar cell substrates and the like.

  The manufacturing process of a semiconductor device includes, for example, a step of locally implanting impurities (ions) such as phosphorus, arsenic, and boron into the main surface of a semiconductor wafer (hereinafter simply referred to as “wafer”). In this step, in order to prevent ion implantation into unnecessary portions, a resist made of a photosensitive resin is patterned on the surface of the wafer, and portions that do not require ion implantation are masked with the resist. Since the resist patterned on the surface of the wafer becomes unnecessary after the ion implantation, a resist removal process for removing the unnecessary resist on the surface of the wafer is performed after the ion implantation.

  In such a typical resist removal process, the surface of the wafer is irradiated with oxygen plasma, and the resist on the surface of the wafer is ashed. Then, a chemical solution such as a sulfuric acid / hydrogen peroxide mixture (SPM solution) which is a mixed solution of sulfuric acid and hydrogen peroxide solution is supplied to the surface of the wafer, and the ashed resist is removed. This achieves removal of the resist from the surface of the wafer.

However, irradiation with oxygen plasma for ashing the resist damages a portion of the wafer surface that is not covered with the resist (for example, an oxide film exposed from the resist).
Therefore, recently, without ashing the resist, an SPM solution is supplied to the surface of the wafer, and the strong oxidizing power of peroxomonosulfuric acid (H ₂ SO ₅ ) contained in the SPM solution causes the resist from the wafer surface. Attention has been focused on a method of peeling and removing the film.

JP 2005-93926 A

  The inventors of the present invention are considering heating the chemical solution supplied to the main surface of the substrate during the chemical solution processing in order to further increase the temperature of the chemical solution supplied to the main surface of the substrate. Specifically, a chemical solution existing on the main surface of the substrate is heated by disposing a heater having an infrared lamp and a housing that accommodates the infrared lamp at a distance from the main surface of the substrate. Are considering.

  However, when the chemical solution is heated by the infrared lamp, the chemical solution is rapidly heated, and a large amount of chemical mist is generated around the main surface of the substrate. The chemical mist generated during the heat treatment adheres to the lower surface of the heater housing facing the main surface of the substrate. If the chemical mist is left on the lower surface of the housing, not only does the amount of infrared light emitted outside the housing decrease due to the decrease in the infrared transmittance of the lower surface of the housing, but also the chemical mist dries and crystallizes. As a result, the lower surface of the housing may become a particle source. Therefore, every time one substrate is processed, it is necessary to wash away the chemical solution adhering to the lower surface of the heater housing.

As a measure for cleaning the heater housing, a bar nozzle in which a plurality of discharge ports directed downward in the vertical direction are arranged in a row or a plurality of rows in the horizontal direction is provided, and the processing liquid from each discharge port is applied to the heater from above. Possible measures are to supply. However, with such a measure, it is difficult to spread the cleaning liquid over the entire lower surface of the heater housing.
The present invention has been made under such a background, and an object thereof is to provide a substrate processing apparatus and a heater cleaning method capable of cleaning a heater satisfactorily.

In order to achieve the above object, the invention according to claim 1 includes an infrared lamp (38) and a housing (40) for housing the infrared lamp, and a processing position facing the main surface of the substrate (W). Then, a heater (35) for heating the main surface of the substrate, and a cleaning liquid supply means (84,) for supplying a cleaning liquid to the outer surface of the housing in a state where the heater is positioned at a cleaning position different from the processing position. 85, 86, 87, 88; 101; 201) and a housing member (80; 180; 280) for housing the heater and receiving the cleaning liquid scattered from the heater (1; 1A; 1B).

In addition, although the alphanumeric characters in parentheses represent corresponding components in the embodiments described later, the scope of the claims is not intended to be limited to the embodiments.
According to this configuration, the cleaning liquid is supplied to the outer surface of the heater housing in a state where the heater is disposed at a cleaning position different from the processing position during the heat treatment. Thereby, the foreign material adhering to the outer surface of the housing can be washed away using the cleaning liquid. Therefore, the outer surface of the housing can be cleaned well.

The housing may have a facing surface (52B) that faces the surface of the substrate when the substrate is heated by the infrared lamp. In addition, the substrate may be subjected to heat treatment in a state where the chemical solution is present on the main surface of the substrate.
In this case, during the heat treatment, the chemical solution is suddenly warmed by the infrared lamp, and a large amount of chemical solution mist is generated around the main surface of the substrate, and this chemical solution mist may adhere to the opposing surface of the housing. .

  However, in such cleaning of the heater, the chemical solution adhering to the opposing surface of the housing is washed away by the cleaning solution. Thereby, the opposing surface of a housing can be washed favorably. Therefore, it is possible to prevent a reduction in the amount of infrared light emitted to the outside of the housing, or the housing from becoming a particle source and adversely affecting the processing of the substrate.

According to a second aspect of the present invention, the cleaning position may be a standby position when the heater is retracted from the processing position and stands by.
According to this configuration, since the cleaning process is performed on the heater that stands by at the standby position, if the heater is positioned at the standby position, the heater can be cleaned regardless of the processing progress of the substrate processing apparatus.

Further, as described in claim 3 , the storage member includes a bottomed container-shaped storage container (80) having a discharge port (83) at the bottom (82) and capable of storing a liquid, The cleaning liquid supply means is connected to a cleaning liquid nozzle (86) for supplying a cleaning liquid into the storage container, and a drain pipe for discharging the liquid stored in the storage container, connected to the discharge port of the storage container. (84) and a drain valve (85) interposed in the drain pipe and opening and closing the drain pipe.

According to this configuration, the discharge of the cleaning liquid from the bottomed container is prevented by closing the drainage valve. In this state, when the cleaning liquid is supplied from the cleaning liquid nozzle, the cleaning liquid is stored in the storage container. The outer surface of the housing can be cleaned by immersing the outer surface of the heater housing in the cleaning liquid stored in the storage container.
According to a fourth aspect of the present invention, the cleaning liquid supply means may include a cleaning liquid nozzle (101; 201) having a cleaning liquid discharge port (100; 200) for discharging the cleaning liquid toward the outer surface of the housing. .

The invention according to claim 5 further includes a drying gas spraying means (89, 90, 91) for spraying a drying gas toward the outer surface of the housing in order to remove the cleaning liquid from the outer surface of the housing. It is a substrate processing apparatus as described in any one of Claims 1-4 .
According to this configuration, the drying gas from the drying gas nozzle is blown to the heater housing. The cleaning liquid adhering to the outer surface of the housing is blown off by the drying gas. Thereby, the outer surface of a housing can be dried favorably.

The invention according to claim 6 further includes a heater raising / lowering means (37) for raising and lowering the heater, and the drying gas spraying means discharges a drying gas in a direction intersecting with the raising / lowering direction of the heater. (89), the substrate processing apparatus controls the drying gas spraying means and the heater lifting / lowering means to discharge the drying gas from the drying gas nozzle and to raise / lower the heater. The substrate processing apparatus according to claim 5 , further comprising spray drying control means (55) for moving up and down a supply position of a drying gas on an outer surface of the housing.

According to this configuration, while the drying gas from the drying gas nozzle is discharged sideways, the heater moves up and down in a region facing the discharge port. For this reason, since the drying gas is blown over the entire outer surface of the housing, the cleaning liquid can be removed from the entire outer surface of the housing. Thereby, the outer surface of a housing can be dried favorably.
The invention according to claim 7 further includes a heating and drying control means (55) for heating and drying the cleaning liquid adhering to the outer surface by irradiating the housing with infrared rays from the infrared lamp. The substrate processing apparatus according to any one of to 6 .

According to this configuration, the housing is heated by the infrared irradiation from the infrared lamp, and the cleaning liquid adhering to the outer surface of the housing is removed. Thereby, the outer surface of a housing can be dried favorably.
In order to achieve the above object, the invention according to claim 8 is a process having an infrared lamp (38) and a housing (40) for accommodating the infrared lamp, and facing the main surface of the substrate (W). a heater (35) for heating the main surface of the substrate at the position, a heater method for cleaning, Unlike the processing position, housing for receiving the cleaning solution scattered from the heater member (80; 180; 280 to a set cleaning position so that at least a portion of the heater is accommodated in), and supplies a heater arranging step, a cleaning liquid to the outer surface of the heater positioned in the cleaning position to place the heater A heater cleaning method including a cleaning liquid supply step (S21, S22, S23).

According to the method of this invention, there exists an effect equivalent to the effect demonstrated in relation to Claim 1.
The invention according to claim 9, further comprising after completion of the cleaning liquid supplying step, the drying step of cleaning liquid attached to the outer surface of the housing is removed (S26, S27, S28), according to claim 8 This is a heater cleaning method.

According to the method of the present invention, the cleaning liquid remaining on the outer surface of the housing is removed after the heater cleaning process. Therefore, the cleaning liquid is removed from the outer surface of the housing. Thereby, it is possible to prevent the cleaning liquid from remaining on the outer surface of the housing and adversely affecting the processing of the substrate.
Invention of Claim 10 WHEREIN: The said drying process further includes the heat drying process (S28) which irradiates the infrared rays from the said infrared lamp to the said housing, and heat-drys the washing | cleaning liquid adhering to the said outer surface, A heater cleaning method according to claim 9 .

According to the method of the present invention, the same function and effect as those described in connection with claim 7 are achieved.
The invention of claim 1 1 wherein, said drying step, a heater elevating step (S27) for lifting the heater, towards the outer surface of the housing, from the drying gas nozzle (89), a lifting direction of the heater drying gas discharging step of discharging the dry gas in a direction crossing and a (S26), a heater cleaning method according to claim 9 or 10.

  According to the method of the present invention, the same function and effect as those described in connection with claim 7 are achieved.

It is a figure which shows typically the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. FIG. 2 is a schematic sectional view of the heater head shown in FIG. 1. It is a perspective view of the infrared lamp shown in FIG. It is a figure which shows the structure of the washing | cleaning pod shown in FIG. It is a block diagram which shows the electric constitution of the substrate processing apparatus shown in FIG. It is process drawing which shows the process example of the resist removal process which concerns on this invention. It is an illustration for explaining an SPM liquid film formation process. It is an illustration figure for demonstrating a SPM liquid film heating process. It is a top view which shows the movement range of the heater head in a SPM liquid film heating process. It is a flowchart which shows the flow of a heater head washing | cleaning drying process. It is an illustration for explaining one process in a heater head washing drying process. FIG. 10B is an illustrative view showing a step subsequent to FIG. 10A. FIG. 10B is an illustrative view showing a step subsequent to FIG. 10B. It is a figure of the cleaning pod of the substrate processing apparatus concerning a 2nd embodiment of the present invention. It is sectional drawing seen from the cut surface line AA of FIG. It is a figure of the cleaning pod of the substrate processing apparatus concerning a 3rd embodiment of the present invention. It is sectional drawing seen from the cut surface line BB of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention.
The substrate processing apparatus 1 includes a processing chamber 2 partitioned by a partition wall 2A. A fan filter unit (not shown) for sending clean air (air generated by purifying air in the clean room in which the substrate processing apparatus 1 is installed) into the processing chamber 2 is provided on the ceiling wall of the processing chamber 2. Is provided.

  The substrate processing apparatus 1 has a wafer rotation mechanism (substrate holding means) 3 for holding and rotating the wafer W in the processing chamber 2, and the surface (upper surface) of the wafer W held by the wafer rotation mechanism 3. The wafer is disposed opposite to the surface of the wafer W held in the wafer rotation mechanism 3 and a peeling liquid nozzle (chemical liquid supply means) 4 for supplying an SPM liquid as an example of a resist stripping liquid as a chemical liquid. And a heater head (heater) 35 for heating the SPM liquid on the surface of W.

  The wafer rotation mechanism 3 includes a motor 6, a spin shaft 7 integrated with a drive shaft of the motor 6, a disc-shaped spin base 8 attached to the upper end of the spin shaft 7 substantially horizontally, and a spin base 8. And a plurality of clamping members 9 provided at substantially equiangular intervals at a plurality of locations on the peripheral edge of the. The plurality of clamping members 9 clamp the wafer W in a substantially horizontal posture. When the motor 6 is driven in this state, the spin base 8 is rotated around a predetermined rotation axis (vertical axis) C by the driving force, and the wafer W is maintained in a substantially horizontal posture together with the spin base 8. It is rotated around the vertical rotation axis C in the state.

The wafer rotating mechanism 3 is not limited to the clamping type, and for example, the wafer W is held in a horizontal posture by vacuum suction on the back surface of the wafer W, and further rotated around the rotation axis C in that state. By doing so, a vacuum suction type of rotating the wafer W held by the wafer rotating mechanism 3 may be adopted.
The stripping liquid nozzle 4 is, for example, a straight nozzle that discharges the SPM liquid in a continuous flow state. The stripping liquid nozzle 4 is attached to the tip of the first liquid arm 11 extending substantially horizontally with its discharge port directed downward. The first liquid arm 11 is provided so as to be rotatable around a predetermined swing axis extending in the vertical direction. The first liquid arm 11 is coupled to a first liquid arm swinging mechanism 12 for swinging the first liquid arm 11 within a predetermined angle range. As the first liquid arm 11 swings, the stripping liquid nozzle 4 moves to a position on the rotation axis C of the wafer W (position facing the rotation center of the wafer W) and a home set on the side of the wafer rotation mechanism 3. Moved between positions. This home position is a standby position when the heater head 35 is retracted from above the wafer W and stands by.

A stripping solution supply pipe 15 to which an SPM solution from an SPM supply source is supplied is connected to the stripping solution nozzle 4. In the middle of the stripping solution supply pipe 15, a stripping solution valve 23 for switching supply / stop of supply of the SPM solution from the stripping solution nozzle 4 is interposed.
The substrate processing apparatus 1 is also held by the wafer rotation mechanism 3 and the DIW nozzle 24 for supplying DIW (deionized water) as a rinsing liquid to the surface of the wafer W held by the wafer rotation mechanism 3. Surrounding the periphery of the wafer rotation mechanism 3 with the SC1 nozzle 25 for supplying SC1 (ammonia-hydrogen peroxide mixture) as a cleaning chemical to the surface of the wafer W And a cup 5 for receiving SPM liquid, SC1, and DIW that flow down or scatter from W.

  The DIW nozzle 24 is, for example, a straight nozzle that discharges DIW in a continuous flow state. The DIW nozzle 24 is fixedly disposed above the wafer rotation mechanism 3 with its discharge port directed toward the vicinity of the rotation center of the wafer W. A DIW supply pipe 26 to which DIW is supplied from a DIW supply source is connected to the DIW nozzle 24. A DIW valve 27 for switching supply / stop of supply of DIW from the DIW nozzle 24 is interposed in the middle of the DIW supply pipe 26.

  The SC1 nozzle 25 is, for example, a straight nozzle that discharges SC1 in a continuous flow state. The SC1 nozzle 25 is attached to the tip of the second liquid arm 28 that extends substantially horizontally with its discharge port directed downward. The second liquid arm 28 is provided so as to be rotatable around a predetermined swing axis extending in the vertical direction. The second liquid arm 28 is coupled to a second liquid arm swing mechanism 29 for swinging the second liquid arm 28 within a predetermined angle range. As the second liquid arm 28 swings, the SC1 nozzle 25 moves to a position on the rotation axis C of the wafer W (a position facing the rotation center of the wafer W) and a home position set to the side of the wafer rotation mechanism 3. Moved between.

An SC1 supply pipe 30 to which SC1 from an SC1 supply source is supplied is connected to the SC1 nozzle 25. An SC1 valve 31 for switching supply / stop of supply of SC1 from the SC1 nozzle 25 is interposed in the middle of the SC1 supply pipe 30.
A support shaft 33 extending in the vertical direction is disposed on the side of the wafer rotation mechanism 3. A heater arm 34 extending in the horizontal direction is coupled to the upper end portion of the support shaft 33, and a heater head 35 that houses and holds the infrared lamp 38 is attached to the tip of the heater arm 34. Further, the support shaft 33 includes a swing drive mechanism 36 for rotating the support shaft 33 around the central axis, and a lift drive mechanism (heater lifting means) for moving the support shaft 33 up and down along the central axis. 37 is connected.

  A driving force is input to the support shaft 33 from the swing drive mechanism 36 and the support shaft 33 is rotated within a predetermined angle range, whereby the heater arm 34 is located above the wafer W held by the wafer rotation mechanism 3. Is swung around the support shaft 33 as a fulcrum. By the swinging of the heater arm 34, the heater head 35 is moved to a position including the rotation axis C of the wafer W (position facing the rotation center of the wafer W), and a home position set to the side of the wafer rotation mechanism 3. Moved between. Further, by inputting a driving force from the lifting drive mechanism 37 to the support shaft 33 and moving the support shaft 33 up and down, the proximity position close to the surface of the wafer W held by the wafer rotation mechanism 3 (first described later). Between the proximity position and the second proximity position of FIG. 1. A position indicated by a two-dot chain line in FIG. 1) and a retreat position (position indicated by a solid line in FIG. 1) for retreating above the wafer W, The heater head 35 is moved up and down. In this embodiment, the proximity position is set to a position where the distance between the surface of the wafer W held by the wafer rotation mechanism 3 and the lower surface 52B of the heater head 35 is 3 mm, for example.

A cleaning pod (storage container) 80 for accommodating the heater head 35 is disposed at the home position of the heater head 35. The cleaning pod 80 is a bottomed cylindrical container, and the heater head 35 is placed in a standby state while being accommodated in the cleaning pod 80.
FIG. 2 is a schematic sectional view of the heater head 35.
The heater head 35 has an infrared lamp 38, an opening 39 in the upper part, a bottomed container-like lamp housing (housing) 40 that houses the infrared lamp 38, and the infrared lamp 38 is suspended inside the lamp housing 40. Support member 42 and a lid 41 for closing the opening 39 of the lamp housing 40. In this embodiment, the lid 41 is fixed to the tip of the heater arm 34.

  FIG. 3 is a perspective view of the infrared lamp 38. As shown in FIGS. 2 and 3, the infrared lamp 38 includes an annular (arc-shaped) annular portion 43 and a pair extending from both ends of the annular portion 43 along the central axis of the annular portion 43. Infrared lamp heater having the straight portions 44 and 45, and the annular portion 43 mainly functions as a light emitting portion. In this embodiment, the diameter (outer diameter) of the annular portion 43 is set to about 60 mm, for example. In a state where the infrared lamp 38 is supported by the support member 42, the annular portion 43 is in a horizontal posture. In other words, the central axis of the annular portion 43 is an axis perpendicular to the surface of the wafer W held by the wafer rotation mechanism 3.

The infrared lamp 38 is configured by arranging a filament in a quartz pipe. An amplifier 54 for supplying voltage is connected to the infrared lamp 38. As the infrared lamp 38, a short, medium and long wavelength infrared heater represented by a halogen lamp and a carbon heater can be adopted.
As shown in FIG. 2, the lid 41 has a disk shape and is fixed in a horizontal posture with respect to the heater arm 34. The lid 41 is formed using a fluororesin material such as PTFE (polytetrafluoroethylene). In this embodiment, the lid 41 is formed integrally with the heater arm 34. However, the lid 41 may be formed separately from the heater arm 34. In addition to a resin material such as PTFE, a material such as ceramics or quartz can also be used as the material of the lid 41.

  A groove portion 51 (substantially cylindrical) is formed on the lower surface 49 of the lid 41. The groove 51 has an upper bottom surface 50 formed of a horizontal flat surface, and the upper surface 42A of the support member 42 is fixed to the upper bottom surface 50 in contact therewith. The lid 41 is formed with insertion holes 58 and 59 that penetrate the upper bottom surface 50 and the lower surface 42B in the vertical direction (vertical direction). The insertion holes 58 and 59 are for insertion of the upper ends of the linear portions 44 and 45 of the infrared lamp 38.

The lamp housing 40 has a bottomed cylindrical container shape. The lamp housing 40 is formed using quartz.
The lamp housing 40 is fixed to the lower surface 49 of the lid 41 (the lower surface excluding the groove portion 51 in this embodiment) with the opening 39 facing upward. An annular flange 40A projects radially outward (in the horizontal direction) from the peripheral edge on the opening side of the lamp housing 40. The lamp housing 40 is supported by the lid 41 by fixing the flange 40A to the lower surface 49 of the lid 41 using a fixing means (not shown) such as a bolt.

  In this state, the bottom plate portion 52 of the lamp housing 40 is in the shape of a horizontal disk. Each of the upper surface 52A and the lower surface (opposing surface) 52B of the bottom plate portion 52 forms a horizontal flat surface. In the lamp housing 40, the infrared lamp 38 is disposed so that the lower portion of the annular portion 43 is close to the upper surface 52 </ b> A of the bottom plate portion 52. The annular portion 43 and the bottom plate portion 52 are provided in parallel to each other. In other words, the bottom of the annular portion 43 is covered with the bottom plate portion 52 of the lamp housing 40. In this embodiment, the outer diameter of the lamp housing 40 is set to about 85 mm, for example. Further, the vertical distance between the infrared lamp 38 (the lower portion of the annular portion 43) and the upper surface 52A is set to about 2 mm, for example.

  The support member 42 has a thick plate shape (substantially disk shape), and is attached and fixed to the lid 41 from below with a bolt 56 and the like in a horizontal posture. The support member 42 is formed using a heat-resistant material (for example, ceramics or quartz). The support member 42 has two insertion holes 46 and 47 that penetrate the upper surface 42A and the lower surface 42B in the vertical direction (vertical direction). The insertion holes 46 and 47 are for the insertion of the straight portions 44 and 45 of the infrared lamp 38.

An O-ring 48 is fitted and fixed to the middle part of each straight part 44, 45. In a state where the straight portions 44 and 45 are inserted through the insertion holes 46 and 47, the outer periphery of each O-ring 48 is in pressure contact with the inner walls of the insertion holes 46 and 47, whereby the insertion holes 46 and 47 of the straight portions 44 and 45 are connected. 47 is achieved, and the infrared lamp 38 is suspended and supported by the support member 42.
When a voltage is supplied from the amplifier 54 to the infrared lamp 38, the infrared lamp 38 emits infrared rays and is emitted toward the lower side of the heater head 35 via the lamp housing 40.
Infrared rays emitted through the bottom plate portion 52 of the lamp housing 40 heat the SPM liquid.

  Further, an air supply path 60 for supplying air to the inside of the lamp housing 40 and an exhaust path 61 for exhausting the atmosphere inside the lamp housing 40 are formed in the lid 41. The air supply path 60 and the exhaust path 61 have an air supply port 62 and an exhaust port 63 that open on the lower surface of the lid 41. One end of an air supply pipe 64 is connected to the air supply path 60. The other end of the air supply pipe 64 is connected to an air supply source. One end of an exhaust pipe 65 is connected to the exhaust path 61. The other end of the exhaust pipe 65 is connected to an exhaust source.

  FIG. 4 is a diagram showing the configuration of the cleaning pod 80. The cleaning pod 80 is a bottomed cylindrical container. The upper surface of the cleaning pod 80 is open, and an inlet for receiving the heater head 35 is formed. The heater head 35 is accommodated in the cleaning pod 80 from this entrance. The cleaning pod 80 includes a cylindrical peripheral wall 81 and a bottom portion 82 coupled to the lower end of the peripheral wall 81.

  A drainage port 83 is formed at a substantially central portion of the bottom portion 82. One end of a drainage pipe (cleaning liquid supply means) 84 is connected to the drainage port 83 on the lower surface of the bottom portion 82. The other end of the drainage pipe 84 is connected to a drainage facility for processing the drainage. The drainage pipe 84 is provided with a drainage valve (cleaning liquid supply means) 85 for opening and closing the drainage pipe 84. The drain valve 85 is normally opened.

  A cleaning liquid nozzle (cleaning liquid supply means) 86 for supplying DIW as an example of a cleaning liquid to the outer surface of the heater head 35 is disposed on the peripheral wall 81. The cleaning liquid is supplied to each cleaning liquid nozzle 86 through a cleaning liquid supply pipe (cleaning liquid supply means) 87. Each cleaning liquid supply pipe 87 is provided with a cleaning liquid valve (cleaning liquid supply means) 88. When the cleaning liquid valve 88 is opened, the cleaning liquid is supplied to the corresponding cleaning liquid nozzle 86, and the cleaning liquid is discharged from the discharge port of the cleaning liquid nozzle 86.

When the cleaning liquid is discharged from the cleaning liquid nozzle 86 in a state where the drain valve 85 is closed, the cleaning liquid is guided to the bottom portion 82 and stored in the bottom portion 82. The cleaning liquid accumulated in the cleaning pod 80 is drained from the drainage port 83 when the drainage valve 85 is opened, and drained through the drainage pipe 84.
A plurality of (for example, a pair of) drying gas nozzles (drying gas spraying means) 89 for supplying nitrogen gas as an example of the drying gas to the outer surface of the heater head 35 slightly below the upper edge of the peripheral wall 81. Is arranged. The pair of drying gas nozzles 89 are disposed on the peripheral wall 81 at the same height so that, for example, the discharge ports face each other across the central axis of the cleaning pod 80.

  The drying gas is supplied to each drying gas nozzle 89 through a drying gas supply pipe (drying gas spraying means) 90. Each drying gas supply pipe 90 is provided with a drying gas valve (drying gas spraying means) 91. When the drying gas valve 91 is opened, the cleaning liquid is supplied to the corresponding drying gas nozzle 89. A drying gas is discharged from each drying gas nozzle 89 substantially horizontally toward the inside of the cleaning pod 80.

  FIG. 5 is a block diagram showing an electrical configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 further includes a control device 55 configured to include a microcomputer. The control device 55 includes a motor 6, an amplifier 54, a swing drive mechanism 36, a lift drive mechanism 37, a first liquid arm swing mechanism 12, a second liquid arm swing mechanism 29, a peeling liquid valve 23, a DIW valve 27, An SC1 valve 31, a drain valve 85, a cleaning liquid valve 88, a drying gas valve 91, and the like are connected as control targets.

FIG. 6 is a process diagram showing a processing example of resist removal processing according to the present invention. FIG. 7A is an illustrative view for explaining an SPM liquid film forming step to be described later. FIG. 7B is an illustrative view for explaining an SPM liquid film heating step described later. FIG. 8 is a plan view showing a moving range of the heater head 35 in an SPM liquid film heating process to be described later.
Hereinafter, an example of the resist removal process will be described with reference to FIGS.

  During the resist removal process, a transfer robot (not shown) is controlled, and the wafer W after the ion implantation process is loaded into the processing chamber 2 (see FIG. 1) (step S1: wafer loading). The wafer W is delivered to the wafer rotating mechanism 3 with its surface facing upward. At this time, the heater head 35, the stripping solution nozzle 4 and the SC1 nozzle 25 are each arranged at the home position so as not to hinder the loading of the wafer W.

  When the wafer W is held by the wafer rotating mechanism 3, the control device 55 controls the motor 6 to start rotating the wafer W (step S2). The rotation speed of the wafer W is increased to a liquid buildup speed (in the range of 30 to 300 rpm, for example, 60 rpm) that can cover the wafer W with the SPM liquid, and then maintained at the liquid buildup speed. Further, the control device 55 controls the first liquid arm swing mechanism 12 to move the stripping liquid nozzle 4 to a position above the wafer W.

  After the rotation speed of the wafer W reaches the liquid buildup speed, the controller 55 opens the stripping liquid valve 23 and supplies the SPM liquid from the stripping liquid nozzle 4 to the surface of the wafer W as shown in FIG. 7A. The SPM liquid supplied to the surface of the wafer W is accumulated on the surface of the wafer W, and an SPM liquid film 70 covering the entire surface of the wafer W is formed on the surface of the wafer W (step S3: SPM liquid film forming step).

  As shown in FIG. 7A, at the start of the SPM liquid film forming process, the control device 55 controls the first liquid arm swinging mechanism 12 so that the stripping liquid nozzle 4 is placed on the rotation center of the wafer W, and the stripping is performed. SPM liquid is discharged from the liquid nozzle 4. Thereby, the liquid film 70 of the SPM liquid can be formed on the surface of the wafer W, and the SPM liquid can be spread over the entire surface of the wafer W. Thereby, the entire surface of the wafer W can be covered with the liquid film 70 of the SPM liquid.

When a predetermined liquid film formation period elapses from the start of discharge of the SPM liquid from the stripping liquid nozzle 4, the control device 55 controls the motor 6 to perform a predetermined heat treatment in which the rotation speed of the wafer W is smaller than the liquid buildup speed. Reduce to speed. Thereby, the SPM liquid film heating process (heating process) of step S4 is performed.
The heat treatment speed is a speed (within a range of 1 to 20 rpm, for example, 15 rpm) at which the liquid film 70 of the SPM liquid can be held on the surface of the wafer W without supplying the SPM liquid to the wafer W. Further, in synchronization with the deceleration of the wafer W by the motor 6, as shown in FIG. 7B, the controller 55 closes the stripping liquid valve 23 to stop the supply of the SPM liquid from the stripping liquid nozzle 4, and The one-liquid arm swinging mechanism 12 is controlled to return the stripping liquid nozzle 4 to the home position. Although the supply of the SPM liquid to the wafer W is stopped, the liquid film 70 of the SPM liquid is continuously held on the surface of the wafer W by reducing the rotation speed of the wafer W to the heat treatment speed.

  Further, as shown in FIGS. 7B and 8, the control device 55 controls the amplifier 54 to emit infrared rays from the infrared lamp 38, and controls the swing drive mechanism 36 and the elevation drive mechanism 37, thereby heating the heater. The head 35, the heater head 35, a first proximity position (position shown by a solid line in FIG. 8) facing the rotation center of the wafer W, and a second proximity position (position shown in FIG. 8) facing the peripheral edge of the wafer W The position is moved back and forth between the two-dot chain line. By irradiation of infrared rays by the infrared lamp 38, the wafer W and the SPM liquid immediately below the infrared lamp 38 are rapidly heated, and the SPM liquid near the boundary with the wafer W is heated. Then, a region facing the lower surface 52B of the bottom plate portion 52 on the surface of the wafer W (a region facing the infrared lamp 38) has a circular arc in a range from the region including the rotation center of the wafer W to the region including the peripheral edge of the wafer W. Reciprocates while drawing a belt-like trajectory. As a result, the entire surface of the wafer W can be heated.

Note that the SPM liquid immediately below the infrared lamp 38 is rapidly heated by the infrared irradiation from the infrared lamp 38. Therefore, a large amount of SPM liquid mist is generated around the surface of the wafer W.
Note that the second proximity position is such that when the heater head 35 is viewed from above, a part of the lower surface 52B of the bottom plate portion 52, more preferably the annular portion 43 of the infrared lamp 38, is more than the outer periphery of the wafer W. It is a position that projects in the radial direction.

In the SPM liquid film heating step of step S4, the liquid film 70 of the SPM liquid is heated near the boundary with the surface of the wafer W. During this time, the reaction between the resist on the surface of the wafer W and the SPM solution proceeds, and the resist peels off from the surface of the wafer W.
Thereafter, when a predetermined liquid film heating time elapses after the rotation speed of the wafer W is reduced, the control device 55 controls the amplifier 54 to stop the infrared radiation from the infrared lamp 38. The control device 55 controls the swing drive mechanism 36 and the lift drive mechanism 37 to return the heater head 35 to the home position. At this time, a large amount of SPM liquid mist adheres to the lower surface 52B of the lamp housing 40 of the heater head 35.

  Then, the control device 55 controls the motor 6 to increase the rotational speed of the wafer W to a predetermined liquid processing rotational speed (in the range of 300 to 1500 rpm, for example, 1000 rpm), and opens the DIW valve 27 to open the DIW nozzle. DIW is supplied from the 24 discharge ports toward the vicinity of the rotation center of the wafer W (step S5: intermediate rinsing process). The DIW supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W toward the periphery of the wafer W. Thereby, the SPM liquid adhering to the surface of the wafer W is washed away by DIW.

When the DIW supply is continued for a predetermined intermediate rinse time, the DIW valve 27 is closed and the supply of DIW to the surface of the wafer W is stopped.
While maintaining the rotation speed of the wafer W at the liquid processing rotation speed, the controller 55 opens the SC1 valve 31 and supplies SC1 from the SC1 nozzle 25 to the surface of the wafer W (step S6). Further, the control device 55 controls the second liquid arm swing mechanism 29 to swing the second liquid arm 28 within a predetermined angle range, so that the SC1 nozzle 25 is placed on the rotation center and the peripheral portion of the wafer W. Move back and forth between the top and bottom. As a result, the supply position on the surface of the wafer W to which SC1 is guided from the SC1 nozzle 25 is in the range from the rotation center of the wafer W to the peripheral edge of the wafer W in an arc shape that intersects the rotation direction of the wafer W. Move back and forth while drawing a trajectory. Thereby, SC1 is supplied uniformly over the entire surface of the wafer W, and foreign substances such as resist residues and particles adhering to the surface of the wafer W can be removed by the chemical ability of SC1.

  When the supply of SC1 is continued for a predetermined SC1 supply time, the controller 55 closes the SC1 valve 31 and controls the second liquid arm swing mechanism 29 to return the SC1 nozzle 25 to the home position. In the state where the rotation speed of the wafer W is maintained at the liquid processing rotation speed, the controller 55 opens the DIW valve 27 and supplies DIW from the discharge port of the DIW nozzle 24 toward the vicinity of the rotation center of the wafer W. (Step S7: rinsing process). The DIW supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W toward the periphery of the wafer W. Thereby, SC1 adhering to the surface of the wafer W is washed away by DIW.

When the supply of DIW is continued for a predetermined rinse time, the DIW valve 27 is closed and the supply of DIW to the surface of the wafer W is stopped.
When a predetermined time has elapsed from the start of the rinsing process, the control device 55 closes the DIW valve 27 and stops the supply of DIW to the surface of the wafer W. Thereafter, the control device 55 drives the motor 6 to increase the rotational speed of the wafer W to a predetermined high rotational speed (for example, 1500 to 2500 rpm), and spins off the DIW adhering to the wafer W to be dried. A dry process is performed (step S8).

When the spin dry process is performed for a predetermined spin dry process time, the control device 55 drives the motor 6 to stop the rotation of the wafer rotating mechanism 3. As a result, the resist removal process for one wafer W is completed, and the processed wafer W is unloaded from the processing chamber 2 by the transfer robot (step S9).
After unloading the wafer W, the heater head 35 is cleaned, and a heater head cleaning / drying process is performed in which the cleaned heater head 35 is dried (step S10). In the heater head cleaning / drying step, a cleaning process for cleaning the heater head 35 is performed, and a drying process is performed on the heater head 35 after the cleaning process.

  When the heater head 35 is at the home position, the heater head 35 is accommodated in the cleaning pod 80. That is, the swing drive mechanism 36 is driven by the control device 55, and the heater arm 34 is moved so that the heater head 35 is disposed vertically above the upper surface of the cleaning pod 80. In addition, the controller 55 is controlled by the control device 55 so that the heater head 35 is in the home position where all of the heater head 35 is accommodated in the cleaning pod 80 (at least all of the lamp housing 40 is accommodated). Until reaching, the heater arm 34 and the heater head 35 are lowered vertically. When the heater head 35 reaches the home position, it is made to wait at that position.

FIG. 9 is a flowchart showing the flow of the heater head cleaning and drying process. FIG. 10A is a schematic diagram for explaining the cleaning process in the heater head cleaning and drying process, and FIGS. 10B and 10C are schematic diagrams for explaining the drying process in the heater head cleaning and drying process. .
When the predetermined cleaning timing is reached, the control device 55 closes the drain valve 85 and opens the cleaning liquid valve 88 (step S21). When the cleaning liquid is discharged from the cleaning liquid nozzle 86 in the state where the drain valve 85 is closed, the cleaning liquid is guided to the bottom portion 82 through the cleaning pod 80 and stored in the bottom portion 82 as shown in FIG. 10A. The discharge of the cleaning liquid from the cleaning liquid nozzle 86 is continued until the liquid level of the processing liquid stored in the cleaning pod 80 reaches a predetermined cleaning height. This cleaning height is set at a position above the lower surface 52B of the heater head 35 at the home position. Therefore, when the level of the cleaning liquid stored in the cleaning pod 80 has reached the cleaning height, the outer surface of the lower part of the lamp housing 40 (the outer peripheral surface of the lower surface 52B and the lower part of the peripheral wall of the lamp housing 40). Is immersed in the cleaning solution.

  When the level of the cleaning liquid stored in the cleaning pod 80 reaches the cleaning height (YES in step S22), the control device 55 closes the cleaning liquid valve 88 (step S23). Thereby, the supply of the cleaning liquid from the cleaning liquid nozzle 86 is stopped. It should be noted that the liquid level of the cleaning liquid may be detected by a liquid level sensor (not shown), and the controller 55 may determine that the cleaning level has been reached based on the detection output from the liquid level sensor. The liquid storage time is set in advance so that the liquid level in the cleaning pod 80 reaches the cleaning height from the state where no cleaning liquid is stored in the bottom 82, and the cleaning liquid valve 88 is opened. The cleaning liquid valve 88 may be closed at a timing when a liquid storage time has elapsed.

By immersing the lower surface 52B of the lamp housing 40 in the cleaning liquid, foreign matters such as SPM liquid mist adhering to the lower surface 52B of the lamp housing 40 are washed away. Thereafter, the amount of the cleaning liquid stored in the bottom 82 is maintained, and the immersion of the outer surface of the lower portion of the lamp housing 40 in the cleaning liquid is maintained.
When a predetermined cleaning process time (immersion time) elapses after the cleaning liquid valve 88 is closed (YES in step S24), the control device 55 opens the drain valve 85 (step S25). The cleaning liquid stored in the cleaning pod 80 is drained from the drain port 83 through the drain pipe 84 when the drain valve 85 is opened. Thereby, the immersion of the outer surface of the lower part of the lamp housing 40 in the cleaning liquid is completed.

Next, the drying process shown in FIGS. 10B and 10C is performed.
After the cleaning liquid is removed from the cleaning pod 80, the control device 55 opens each drying gas valve 91 (step S26). As a result, the drying gas is discharged substantially horizontally from the discharge port of each drying gas nozzle 89 toward the inside of the cleaning pod 80.
Further, the control device 55 controls the elevating drive mechanism 37 to raise the heater head 35.

Then, the drying gas is blown onto the portion of the outer peripheral surface of the peripheral wall of the lamp housing 40 that faces the discharge port of the drying gas nozzle 89.
Thereafter, the control device 55 controls the elevating drive mechanism 37 to move the heater head 35 to a predetermined upper position and a predetermined intermediate position set between the upper position and the home position (two-dot chain lines in FIG. 10B). The position shown in FIG. 10C is moved up and down (step S27). The upper position of the heater head 35 is a position at which the lower surface 52B of the heater head 35 is positioned to the side of the discharge port of the drying gas nozzle 89. The intermediate position of the heater head 35 means that the portion of the outer peripheral surface of the heater head 35 (the outer peripheral surface of the lamp housing 40) that is immersed in the cleaning liquid in the cleaning process is located on the side of the discharge port of the drying gas nozzle 89. It is a position that is located below.

  As the heater head 35 moves up and down, the drying gas blowing position (supply position) in the lower portion of the outer peripheral surface of the peripheral wall of the lamp housing 40 also moves up and down (up and down). Therefore, the drying gas can be sprayed over a wide area on the outer peripheral surface of the peripheral wall of the lamp housing 40. Thereby, the cleaning liquid adhering to the lower part of the outer peripheral surface of the peripheral wall of the lamp housing 40 is blown off and removed.

  As shown in FIG. 10B, when the heater head 35 is in the upper position, the drying gas discharged from the drying gas nozzle 89 flows along the lower surface 52B slightly below the lower surface 52B of the lamp housing 40. The cleaning liquid adhering to the lower surface 52B is blown off and removed by the flowing drying gas. The cleaning liquid scattered from the heater head 35 is received by the peripheral wall 81. Therefore, it is possible to suppress or prevent the droplets of the cleaning liquid from splashing outside the cleaning pod 80.

Regarding the raising / lowering operation of the heater head 35, the control device 55 temporarily stops the raising / lowering operation before raising the heater head 35 to the upper position and then starting the lowering, and keeps the heater head 35 in the upper position. It may be controlled to maintain the time. In this case, the cleaning liquid can be more effectively removed from the lower surface 52B of the lamp housing 40.
Further, the control device 55 controls the amplifier 54 to emit infrared rays from the infrared lamp 38 in parallel with the discharge of the drying gas from the drying gas nozzle 89 in step S26 (step S28, heat drying step). Thereby, the lamp housing 40 is warmed, and the cleaning liquid adhering to the lower part of the lamp housing 40 is removed by evaporation.

The discharge of the drying gas from the drying gas nozzle 89 and the infrared radiation from the infrared lamp 38 are continued from the start of the infrared radiation from the infrared lamp 38 until a predetermined drying processing time elapses.
When the drying processing time has elapsed (YES in step S29), the control device 55 closes each drying gas valve 91 (step S30), and stops the discharge of the drying gas from the drying gas nozzle 89. Further, the control device 55 controls the amplifier 54 to stop the infrared radiation from the infrared lamp 38 (step S30).

Further, the control device 55 controls the elevating drive mechanism 37 to lower the heater head 35 and return it to the home position (step S31).
By completing the heater head cleaning / drying step in step S10, the series of resist removal processing is completed.
As described above, according to this embodiment, the cleaning process for cleaning the heater head 35 is executed in each resist removal process. When this cleaning process is performed, the heater head 35 is disposed at the home position. Further, when the drain valve 85 is closed and the cleaning liquid is supplied from the cleaning liquid nozzle 86, the cleaning liquid is stored in the cleaning pod 80. By immersing the outer surface of the lower portion of the lamp housing 40 in the cleaning liquid stored in the cleaning pod 80, the outer surface of the lower portion of the lamp housing 40 including the lower surface 52B can be cleaned. A large amount of SPM liquid mist generated in the SPM liquid film heating step (step S4 shown in FIG. 6) may adhere to the lower surface 52B of the lamp housing 40.

  Since the SPM liquid mist adhering to the lower surface 52B of the lamp housing 40 can be washed away by the cleaning liquid supplied to the lower surface 52B of the lamp housing 40, the lower surface 52B of the lamp housing 40 can be cleaned well. Thereby, the lower surface 52B of the lamp housing 40 can be kept clean. Therefore, it is possible to prevent a decrease in the amount of infrared light emitted to the outside of the lamp housing 40 and to prevent the lower surface 52B of the lamp housing 40 from becoming a particle source.

In addition, after the cleaning process of the heater head 35, the outer surface of the lower portion of the lamp housing 40 including the lower surface 52B is dried. Thereby, it is possible to prevent the cleaning liquid from remaining on the outer surface of the lower portion of the lamp housing 40 and adversely affecting the processing of the wafer W.
FIG. 11 is a diagram of a cleaning pod (housing member) 180 of the substrate processing apparatus 1A according to the second embodiment of the present invention. FIG. 12 is a cross-sectional view taken along section line AA of FIG. In the substrate processing apparatus 1A, a cleaning pod 180 is mounted instead of the cleaning pod 80 shown in FIG.

  In the cleaning pod 180 illustrated in FIG. 11 and the like, portions corresponding to the respective portions of the cleaning pod 80 of the first embodiment are denoted by the same reference numerals as those in FIG. The cleaning pod 180 of the second embodiment is different from the cleaning pod 80 of the first embodiment in that a plurality of (for example, four) cleaning liquid nozzles 101 are disposed on the disc-shaped bottom portion 182 of the cleaning pod 180. The point is that each cleaning liquid nozzle 101 has a cleaning liquid discharge port 100 for discharging the cleaning liquid toward the lower surface 52 </ b> B of the heater head 35.

  As shown in FIGS. 11 and 12, the cleaning liquid discharge ports 100 are arranged at equal intervals in the circumferential direction at the peripheral edge of the bottom 182. The discharge direction of each cleaning liquid discharge port 100 is a direction inclined in the vertical direction by a predetermined angle (for example, 30 ° to 60 °) and directed toward the central axis of the cylindrical cleaning pod 180. A cleaning liquid is supplied to each cleaning liquid nozzle 101 through a cleaning liquid supply pipe 102. A cleaning liquid valve 103 is interposed in each cleaning liquid supply pipe 102. When the cleaning liquid valve 103 is opened, the cleaning liquid is supplied to the corresponding cleaning liquid nozzle 101, and the cleaning liquid is discharged from the cleaning liquid discharge port 100 of the cleaning liquid nozzle 101.

  In the cleaning pod 180 of the second embodiment, a different cleaning process is executed in the drying process in the cleaning pod 80 of the first embodiment. On the other hand, in the cleaning pod 180 of the second embodiment, a drying process equivalent to the drying process in the cleaning pod 80 of the first embodiment is executed. In the cleaning pod 180 of the second embodiment, the heater head 35 undergoes a cleaning process at a cleaning position (position shown in FIG. 11) slightly above the home position.

When the predetermined cleaning timing is reached, the controller 55 controls the elevating drive mechanism 37 to raise the heater head 35, slightly above the home position and below the intermediate position (position shown in FIG. 10C and the like). It is arranged at the cleaning position set.
Further, each cleaning liquid valve 103 is opened, and the cleaning liquid is discharged from each cleaning liquid discharge port 100. The cleaning liquid discharged from each cleaning liquid discharge port 100 is deposited on the lower surface 52 </ b> B of the heater head 35. In this embodiment, the cleaning liquid discharged from each cleaning liquid discharge port 100 is deposited at, for example, an intermediate position connecting the cleaning liquid discharge port 100 and the center of the lower surface 52B when viewed in a plan view on the circular lower surface 52B. . The cleaning liquid that has landed on the lower surface 52B spreads around the lower surface 52B. Thereafter, the cleaning liquid valve 103 is closed when a predetermined cleaning process period elapses from the start of the discharge of the cleaning liquid from the cleaning liquid nozzle 101. Note that the drain valve 85 is in an open state throughout the cleaning process. Therefore, the cleaning liquid guided to the bottom portion 182 is discharged from the machine through the drainage pipe 84 without being accumulated in the bottom portion 82.

According to the second embodiment, foreign substances such as SPM liquid mist adhering to the lower surface 52B of the lamp housing 40 are washed away by the cleaning liquid supplied to the lower surface 52B of the lamp housing 40. Thereby, the lower surface 52B of the lamp housing 40 can be satisfactorily cleaned.
Thereafter, a drying process equivalent to that shown in FIGS. 10B and 10C is performed.

FIG. 13 is a view of a cleaning pod (accommodating member) 280 of the substrate processing apparatus 1B according to the third embodiment of the present invention. FIG. 14 is a cross-sectional view taken along the cutting plane line BB in FIG. In the substrate processing apparatus 1B, a cleaning pod 280 is mounted instead of the cleaning pod 80 shown in FIG.
In the cleaning pod 280 illustrated in FIG. 13 and the like, portions corresponding to the respective portions of the cleaning pod 80 of the first embodiment are denoted by the same reference numerals as those in FIG. The cleaning pod 280 of the third embodiment is different from the cleaning pod 80 of the first embodiment in that a plurality of (for example, five, only three are shown in FIG. 13) cleaning liquids on the disc-shaped bottom 282 of the cleaning pod 180. The nozzle 201 is disposed, and each cleaning liquid nozzle 201 has a cleaning liquid discharge port 200 for discharging the cleaning liquid toward the lower surface 52B of the heater head 35. Further, since the cleaning liquid discharge port 200 is also arranged at the center of the bottom portion 82, the point that the drainage port 283 is disposed at the peripheral edge of the bottom portion 82 is also different from the first embodiment.

  The plurality of cleaning liquid discharge ports 200 include a single central discharge port 200A facing the lower side of the center of the lower surface 52B of the heater head 35 positioned at the home position, and a plurality (for example, four) facing the lower edge of the lower surface 52B. ) Peripheral discharge port 200B. The peripheral discharge ports 200B are arranged at equal intervals in the circumferential direction at the peripheral edge of the bottom 282. The discharge directions of the cleaning liquid discharge ports 200A and 200B are vertically upward. A cleaning liquid is supplied to each cleaning liquid nozzle 201 through a cleaning liquid supply pipe 202. A cleaning liquid valve 203 is interposed in the cleaning liquid supply pipe 202. When the cleaning liquid valve 203 is opened, the cleaning liquid is supplied to the cleaning liquid nozzle 201, and the cleaning liquid is discharged from the cleaning liquid discharge port 200 (200A, 200B) of the cleaning liquid nozzle 201.

  In the cleaning pod 280 of the third embodiment, a different cleaning process is executed in the drying process in the cleaning pod 80 of the first embodiment. On the other hand, in the cleaning pod 280 of the third embodiment, a drying process equivalent to the drying process in the cleaning pod 80 of the first embodiment is executed. In the cleaning pod 280 of the third embodiment, the heater head 35 is subjected to a cleaning process at the cleaning position (position shown in FIG. 13), as in the second embodiment.

  After the heater head 35 is disposed at the cleaning position, each cleaning liquid valve 103 is opened, and the cleaning liquid is discharged from each cleaning liquid discharge port 200 (200A, 200B). The cleaning liquid discharged from each cleaning liquid discharge port 200 lands on the lower surface 52B of the heater head 35 and spreads around the lower surface 52B. Thereafter, the cleaning liquid valve 203 is closed when a predetermined cleaning process period elapses from the start of the discharge of the cleaning liquid from the cleaning liquid nozzle 201. Note that the drain valve 85 is in an open state throughout the cleaning process. Therefore, the cleaning liquid guided to the bottom portion 282 is discharged outside the apparatus through the drainage pipe 84 without being accumulated in the bottom portion 82.

According to this embodiment, foreign substances such as SPM liquid mist adhering to the lower surface 52B of the lamp housing 40 are washed away by the cleaning liquid supplied to the lower surface 52B of the lamp housing 40. Thereby, the lower surface 52B of the lamp housing 40 can be satisfactorily cleaned.
Thereafter, a drying process equivalent to that shown in FIGS. 10B and 10C is performed.

While the three embodiments of the present invention have been described above, the present invention can be implemented in other forms.
For example, in each of the above-described embodiments, the heater head cleaning / drying step (step S10 shown in FIG. 6) is performed after the wafer W is unloaded from the processing chamber 2. However, for the heater head 35 waiting at the home position, Therefore, the heater head 35 can be cleaned regardless of the progress of the resist removal process. Specifically, for example, after completion of the SPM liquid film heating step (step S4 shown in FIG. 6), the heater head 35 returned to the home position may be subjected to a cleaning process or a drying process (see FIG. Step S20 indicated by a two-dot chain line in FIG. 6: heater head cleaning and drying step). Moreover, if it is after an SPM liquid film heating process, you may perform a heater head washing | cleaning drying process at another timing.

In the second and third embodiments, it is not necessary to store the cleaning liquid in the cleaning pods 180 and 280. Therefore, a configuration in which the drain valve 85 is removed from the cleaning pods 180 and 280 may be employed.
Although the number of drying gas nozzles 89 is two, the number of drying gas nozzles 89 may be three or more. In this case, it is desirable that the plurality of drying gas nozzles 89 be disposed at the same height, and are desirably disposed at equal intervals in the circumferential direction.

Further, the discharge direction of each drying gas nozzle 89 is not horizontal, and may be obliquely downward or obliquely upward.
The pair of drying gas nozzles 89 is not limited to the configuration provided on the peripheral wall 81 of the cleaning pod 80, and may be disposed above the upper surfaces of the cleaning pods 80, 180, and 280 (that is, outside the cleaning pod). .

  Further, in the drying process of the heater head 35, the outer surface of the lamp housing 40 is applied by both blow-off drying in which the drying gas is blown off from the drying gas nozzle 89 and heating drying in which the lamp housing 40 is heated by the infrared lamp 38. Although the case of drying has been described as an example, the outer surface of the lamp housing 40 may be dried only by heat drying with the infrared lamp 38 without performing blow-off drying with a drying gas.

  When the heater head cleaning / drying process is performed after the wafer W is unloaded from the processing chamber 2, the heater arm 34 may be cleaned in conjunction with the execution of the heater head cleaning / drying process. The heater arm 34 can be cleaned using, for example, a bar nozzle (not shown) separately provided in the processing chamber 2. In the bar nozzle, a large number of discharge ports directed vertically downward are arranged in one or a plurality of rows along the horizontal direction, and are arranged in an upper region in the processing chamber 2. In a state where the heater arm 34 is disposed opposite to the lower side of the bar nozzle, the cleaning liquid is discharged from each discharge port of the bar nozzle, and this cleaning liquid falls on the outer surface of the heater arm 34 and the outer surface of the heater arm 34 is cleaned. .

Further, when the heater head cleaning / drying process is performed after the wafer W is unloaded from the processing chamber 2, the processing chamber 2 is cleaned (chamber cleaning) in conjunction with the execution of the heater head cleaning / drying process in step S10. Also good.
Further, the case where DIW is used as the cleaning liquid used in the cleaning process has been described as an example. However, the cleaning liquid is not limited to DIW, and a dilute hydrofluoric acid aqueous solution, carbonated water, electrolytic ion water, ozone water, or the like may be employed as the cleaning liquid. Further, when a chemical solution such as a dilute hydrofluoric acid aqueous solution is used as the cleaning liquid, after the cleaning liquid is supplied to the heater head 35, a rinse treatment for washing the cleaning liquid from the heater head 35 using DIW or carbonated water is performed. Also good.

Moreover, although nitrogen gas was mentioned as an example of drying gas, clean air and other inert gas can be used as drying gas.
The present invention can also be applied to a heater cleaning method provided in a substrate processing apparatus that selectively etches a nitride film on a main surface of a substrate using a high-temperature etching solution such as phosphoric acid.
In addition, various design changes can be made within the scope of matters described in the claims.

1, 1A, 1B Substrate processing equipment 35 Heater head (heater)
37 Elevating drive mechanism (heater elevating means)
38 Infrared lamp 40 Lamp housing (housing)
52B Bottom (opposite surface)
80 Cleaning fluid pod (storage container)
82 Bottom 83 Discharge port 84 Drainage pipe (cleaning liquid supply means)
85 Drain valve (cleaning liquid supply means)
86 Cleaning liquid nozzle (cleaning liquid supply means)
87 Cleaning liquid supply pipe (cleaning liquid supply means)
88 Cleaning liquid nozzle (cleaning liquid supply means)
89 Drying gas nozzle 90 Drying gas supply pipe (drying gas spraying means)
91 Gas valve for drying (gas blowing means for drying)
100 Cleaning liquid discharge port 101 Cleaning liquid nozzle 180 Cleaning liquid pod (housing member)
200 Cleaning Liquid Discharge Port 201 Cleaning Liquid Nozzle 280 Cleaning Liquid Pod (Housing Member)
W Wafer (Substrate)

Claims (11)

An infrared lamp, and a housing that accommodates the infrared lamp, and a heater that heats the main surface of the substrate at a processing position facing the main surface of the substrate;
Cleaning liquid supply means for supplying a cleaning liquid to the outer surface of the housing in a state where the heater is positioned at a cleaning position different from the processing position ;
A substrate processing apparatus comprising: a housing member that houses the heater and receives a cleaning liquid scattered from the heater .   The substrate processing apparatus according to claim 1, wherein the cleaning position is a standby position when the heater is retracted from the processing position and stands by. The housing member includes a bottomed container-like storage container having a discharge port at the bottom and capable of storing liquid;
The cleaning liquid supply means includes
A cleaning liquid nozzle for supplying a cleaning liquid into the storage container;
A drainage pipe connected to the discharge port of the storage container for discharging the liquid stored in the storage container;
Wherein is interposed drain pipe, and a drainage valve for opening and closing the drain pipe, the substrate processing apparatus according to claim 1 or 2.   The substrate processing apparatus according to claim 1, wherein the cleaning liquid supply unit includes a cleaning liquid nozzle having a cleaning liquid discharge port that discharges the cleaning liquid toward an outer surface of the housing. The substrate processing according to any one of claims 1 to 4 , further comprising a drying gas spraying unit that sprays a drying gas toward the outer surface of the housing in order to remove the cleaning liquid from the outer surface of the housing. apparatus. It further includes a heater elevating means for elevating the heater,
The drying gas spraying means includes a drying gas nozzle that discharges a drying gas in a direction intersecting with the elevating direction of the heater,
The substrate processing apparatus controls the drying gas spraying means and the heater lifting / lowering means to discharge drying gas from the drying gas nozzle and to lift / lower the heater, thereby drying the outer surface of the housing. 6. The substrate processing apparatus according to claim 5 , further comprising spray drying control means for raising and lowering the supply position of the working gas. The substrate processing according to any one of claims 1 to 6 , further comprising a heating / drying control unit that heats and drys the cleaning liquid adhering to the outer surface by irradiating the housing with infrared rays from the infrared lamp. apparatus. A heater cleaning method for cleaning a heater that has an infrared lamp and a housing that accommodates the infrared lamp, and that heats the main surface of the substrate at a processing position facing the main surface of the substrate,
Unlike the processing position, the set cleaning position so that at least a portion of the heater in the housing member for receiving the cleaning solution scattered from the heater is housed, and a heater arrangement step of arranging said heater,
And a cleaning liquid supply step of supplying a cleaning liquid to the outer surface of the heater located at the cleaning position. The heater cleaning method according to claim 8 , further comprising a drying step in which the cleaning solution adhering to the outer surface of the housing is removed after the cleaning solution supply step. The heater cleaning method according to claim 9 , wherein the drying step further includes a heating drying step of irradiating the housing with infrared rays from the infrared lamp to heat and dry the cleaning liquid adhering to the outer surface. The drying step
A heater raising and lowering step for raising and lowering the heater;
Towards the outer surface of the housing, from the drying gas nozzle, and a drying gas discharge step of discharging the dry gas in a direction intersecting the lifting direction of the heater, heater cleaning method according to claim 9 or 10 .

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