TWI648770B - 具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體 - Google Patents
具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體 Download PDFInfo
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- TWI648770B TWI648770B TW103133534A TW103133534A TWI648770B TW I648770 B TWI648770 B TW I648770B TW 103133534 A TW103133534 A TW 103133534A TW 103133534 A TW103133534 A TW 103133534A TW I648770 B TWI648770 B TW I648770B
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- 229910052732 germanium Inorganic materials 0.000 title claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 10
- 230000002441 reversible effect Effects 0.000 title description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000010410 layer Substances 0.000 claims description 168
- 239000000758 substrate Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 24
- 239000011241 protective layer Substances 0.000 claims description 21
- 239000002019 doping agent Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000012811 non-conductive material Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000007547 defect Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus ion Chemical class 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/021—Manufacture or treatment of breakdown diodes
- H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/021—Manufacture or treatment of breakdown diodes
- H10D8/024—Manufacture or treatment of breakdown diodes of Avalanche diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/043,431 | 2013-10-01 | ||
| US14/043,431 US9202935B2 (en) | 2013-10-01 | 2013-10-01 | Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201528343A TW201528343A (zh) | 2015-07-16 |
| TWI648770B true TWI648770B (zh) | 2019-01-21 |
Family
ID=52739291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103133534A TWI648770B (zh) | 2013-10-01 | 2014-09-26 | 具有改善的逆向突波能力及減少的漏電流的多晶矽層之齊納二極體 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9202935B2 (OSRAM) |
| EP (1) | EP3053198A4 (OSRAM) |
| JP (1) | JP6594296B2 (OSRAM) |
| KR (1) | KR101800331B1 (OSRAM) |
| CN (1) | CN105556679A (OSRAM) |
| TW (1) | TWI648770B (OSRAM) |
| WO (1) | WO2015050776A1 (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9202935B2 (en) * | 2013-10-01 | 2015-12-01 | Vishay General Semiconductor Llc | Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current |
| US10355144B1 (en) | 2018-07-23 | 2019-07-16 | Amazing Microelectronic Corp. | Heat-dissipating Zener diode |
| US12501632B2 (en) | 2022-12-15 | 2025-12-16 | Nxp B.V. | Semiconductor device with improved mechanical stress resistance |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736779A (en) * | 1995-07-31 | 1998-04-07 | Nec Corporation | Semiconductor device with Zener diode for gate protection, and method for fabricating the same |
| US20080121988A1 (en) * | 2006-11-16 | 2008-05-29 | Alpha & Omega Semiconductor, Ltd | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2317767A2 (fr) * | 1975-07-10 | 1977-02-04 | Silec Semi Conducteurs | Applications d'un procede de diffusion profonde d'impuretes dans un substrat |
| JPS5950113B2 (ja) * | 1975-11-05 | 1984-12-06 | 株式会社東芝 | 半導体装置 |
| JPS60136270A (ja) * | 1983-12-24 | 1985-07-19 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0691267B2 (ja) * | 1984-06-06 | 1994-11-14 | ローム株式会社 | 半導体装置の製造方法 |
| US4775643A (en) | 1987-06-01 | 1988-10-04 | Motorola Inc. | Mesa zener diode and method of manufacture thereof |
| JPS6481265A (en) * | 1987-09-22 | 1989-03-27 | Fujitsu Ltd | Schottky barrier diode device |
| US4945070A (en) * | 1989-01-24 | 1990-07-31 | Harris Corporation | Method of making cmos with shallow source and drain junctions |
| JP2527630Y2 (ja) * | 1991-03-05 | 1997-03-05 | 新電元工業株式会社 | 半導体装置 |
| JPH05110005A (ja) * | 1991-10-16 | 1993-04-30 | N M B Semiconductor:Kk | Ｍｏｓ型トランジスタ半導体装置およびその製造方法 |
| JPH0864843A (ja) | 1994-08-26 | 1996-03-08 | Rohm Co Ltd | ツェナーダイオードの製造方法 |
| JP2666743B2 (ja) | 1994-11-22 | 1997-10-22 | 日本電気株式会社 | 定電圧ダイオード |
| US5710054A (en) * | 1996-08-26 | 1998-01-20 | Advanced Micro Devices, Inc. | Method of forming a shallow junction by diffusion from a silicon-based spacer |
| US6791161B2 (en) | 2002-04-08 | 2004-09-14 | Fabtech, Inc. | Precision Zener diodes |
| US7012276B2 (en) | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
| EP1672701B1 (en) | 2004-12-15 | 2012-02-15 | LG Electronics, Inc. | Method for fabricating and packaging Zener diodes |
| JP2006179518A (ja) * | 2004-12-20 | 2006-07-06 | Steady Design Ltd | ツェナーダイオードの製造方法 |
| US7511357B2 (en) * | 2007-04-20 | 2009-03-31 | Force-Mos Technology Corporation | Trenched MOSFETs with improved gate-drain (GD) clamp diodes |
| KR20090015719A (ko) | 2007-08-09 | 2009-02-12 | 주식회사 하이닉스반도체 | 상변화 메모리 장치의 ｐｎ 다이오드 및 그 제조방법 |
| JP2010199165A (ja) * | 2009-02-24 | 2010-09-09 | Panasonic Corp | 半導体装置とその製造方法 |
| US8101993B2 (en) | 2009-03-18 | 2012-01-24 | Force Mos Technology Co., Ltd. | MSD integrated circuits with shallow trench |
| US8415765B2 (en) * | 2009-03-31 | 2013-04-09 | Panasonic Corporation | Semiconductor device including a guard ring or an inverted region |
| EP2317767A1 (en) | 2009-10-27 | 2011-05-04 | Nagravision S.A. | Method for accessing services by a user unit |
| US8198703B2 (en) | 2010-01-18 | 2012-06-12 | Freescale Semiconductor, Inc. | Zener diode with reduced substrate current |
| JP2012174894A (ja) | 2011-02-22 | 2012-09-10 | Renesas Electronics Corp | ツェナーダイオード、半導体装置及びそれらの製造方法 |
| US9202935B2 (en) * | 2013-10-01 | 2015-12-01 | Vishay General Semiconductor Llc | Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current |
-
2013
- 2013-10-01 US US14/043,431 patent/US9202935B2/en active Active
-
2014
- 2014-09-26 WO PCT/US2014/057577 patent/WO2015050776A1/en not_active Ceased
- 2014-09-26 TW TW103133534A patent/TWI648770B/zh active
- 2014-09-26 EP EP14850973.0A patent/EP3053198A4/en not_active Ceased
- 2014-09-26 JP JP2016516551A patent/JP6594296B2/ja active Active
- 2014-09-26 KR KR1020167008257A patent/KR101800331B1/ko not_active Expired - Fee Related
- 2014-09-26 CN CN201480051532.6A patent/CN105556679A/zh active Pending
-
2015
- 2015-08-06 US US14/819,803 patent/US9966429B2/en active Active
- 2015-08-06 US US14/819,826 patent/US9331142B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736779A (en) * | 1995-07-31 | 1998-04-07 | Nec Corporation | Semiconductor device with Zener diode for gate protection, and method for fabricating the same |
| US20080121988A1 (en) * | 2006-11-16 | 2008-05-29 | Alpha & Omega Semiconductor, Ltd | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
Also Published As
| Publication number | Publication date |
|---|---|
| US9966429B2 (en) | 2018-05-08 |
| CN105556679A (zh) | 2016-05-04 |
| US20150340458A1 (en) | 2015-11-26 |
| US9202935B2 (en) | 2015-12-01 |
| EP3053198A4 (en) | 2017-05-03 |
| KR101800331B1 (ko) | 2017-11-22 |
| KR20160052606A (ko) | 2016-05-12 |
| TW201528343A (zh) | 2015-07-16 |
| US9331142B2 (en) | 2016-05-03 |
| US20150091136A1 (en) | 2015-04-02 |
| EP3053198A1 (en) | 2016-08-10 |
| WO2015050776A1 (en) | 2015-04-09 |
| JP2016536778A (ja) | 2016-11-24 |
| JP6594296B2 (ja) | 2019-10-23 |
| US20150340431A1 (en) | 2015-11-26 |
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