KR101800331B1 - 개선된 역서지 내량 및 감소된 누설 전류를 위한 폴리실리콘 층을 갖는 제너 다이오드 - Google Patents

개선된 역서지 내량 및 감소된 누설 전류를 위한 폴리실리콘 층을 갖는 제너 다이오드 Download PDF

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KR101800331B1
KR101800331B1 KR1020167008257A KR20167008257A KR101800331B1 KR 101800331 B1 KR101800331 B1 KR 101800331B1 KR 1020167008257 A KR1020167008257 A KR 1020167008257A KR 20167008257 A KR20167008257 A KR 20167008257A KR 101800331 B1 KR101800331 B1 KR 101800331B1
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semiconductor substrate
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KR20160052606A (ko
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시-콴 첸
완-란 치앙
이-이인 린
밍-타이 치앙
치-핑 펭
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비샤이 제너럴 세미컨덕터 엘엘씨
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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    • H01L29/66113—
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/024—Manufacture or treatment of breakdown diodes of Avalanche diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020167008257A 2013-10-01 2014-09-26 개선된 역서지 내량 및 감소된 누설 전류를 위한 폴리실리콘 층을 갖는 제너 다이오드 Expired - Fee Related KR101800331B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/043,431 2013-10-01
US14/043,431 US9202935B2 (en) 2013-10-01 2013-10-01 Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
PCT/US2014/057577 WO2015050776A1 (en) 2013-10-01 2014-09-26 Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current

Publications (2)

Publication Number Publication Date
KR20160052606A KR20160052606A (ko) 2016-05-12
KR101800331B1 true KR101800331B1 (ko) 2017-11-22

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KR1020167008257A Expired - Fee Related KR101800331B1 (ko) 2013-10-01 2014-09-26 개선된 역서지 내량 및 감소된 누설 전류를 위한 폴리실리콘 층을 갖는 제너 다이오드

Country Status (7)

Country Link
US (3) US9202935B2 (OSRAM)
EP (1) EP3053198A4 (OSRAM)
JP (1) JP6594296B2 (OSRAM)
KR (1) KR101800331B1 (OSRAM)
CN (1) CN105556679A (OSRAM)
TW (1) TWI648770B (OSRAM)
WO (1) WO2015050776A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
US10355144B1 (en) 2018-07-23 2019-07-16 Amazing Microelectronic Corp. Heat-dissipating Zener diode
US12501632B2 (en) 2022-12-15 2025-12-16 Nxp B.V. Semiconductor device with improved mechanical stress resistance

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US4945070A (en) * 1989-01-24 1990-07-31 Harris Corporation Method of making cmos with shallow source and drain junctions
JP2527630Y2 (ja) * 1991-03-05 1997-03-05 新電元工業株式会社 半導体装置
JPH05110005A (ja) * 1991-10-16 1993-04-30 N M B Semiconductor:Kk Ｍｏｓ型トランジスタ半導体装置およびその製造方法
JPH0864843A (ja) 1994-08-26 1996-03-08 Rohm Co Ltd ツェナーダイオードの製造方法
JP2666743B2 (ja) 1994-11-22 1997-10-22 日本電気株式会社 定電圧ダイオード
JPH0945912A (ja) * 1995-07-31 1997-02-14 Nec Corp 半導体装置およびその製造方法
US5710054A (en) * 1996-08-26 1998-01-20 Advanced Micro Devices, Inc. Method of forming a shallow junction by diffusion from a silicon-based spacer
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EP1672701B1 (en) 2004-12-15 2012-02-15 LG Electronics, Inc. Method for fabricating and packaging Zener diodes
JP2006179518A (ja) * 2004-12-20 2006-07-06 Steady Design Ltd ツェナーダイオードの製造方法
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US9202935B2 (en) * 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

Also Published As

Publication number Publication date
TWI648770B (zh) 2019-01-21
US9966429B2 (en) 2018-05-08
CN105556679A (zh) 2016-05-04
US20150340458A1 (en) 2015-11-26
US9202935B2 (en) 2015-12-01
EP3053198A4 (en) 2017-05-03
KR20160052606A (ko) 2016-05-12
TW201528343A (zh) 2015-07-16
US9331142B2 (en) 2016-05-03
US20150091136A1 (en) 2015-04-02
EP3053198A1 (en) 2016-08-10
WO2015050776A1 (en) 2015-04-09
JP2016536778A (ja) 2016-11-24
JP6594296B2 (ja) 2019-10-23
US20150340431A1 (en) 2015-11-26

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