TWI646180B - 用於硏磨藍寶石表面之化學機械硏磨組成物及其使用方法 - Google Patents
用於硏磨藍寶石表面之化學機械硏磨組成物及其使用方法 Download PDFInfo
- Publication number
- TWI646180B TWI646180B TW103126539A TW103126539A TWI646180B TW I646180 B TWI646180 B TW I646180B TW 103126539 A TW103126539 A TW 103126539A TW 103126539 A TW103126539 A TW 103126539A TW I646180 B TWI646180 B TW I646180B
- Authority
- TW
- Taiwan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- colloidal silica
- polishing slurry
- particle size
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 187
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 108
- 239000010980 sapphire Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- 238000005498 polishing Methods 0.000 claims abstract description 229
- 239000002245 particle Substances 0.000 claims abstract description 134
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 131
- 239000002002 slurry Substances 0.000 claims abstract description 128
- 239000008119 colloidal silica Substances 0.000 claims abstract description 124
- 239000013530 defoamer Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 230000003115 biocidal effect Effects 0.000 claims abstract description 25
- 239000003139 biocide Substances 0.000 claims abstract description 25
- 238000000227 grinding Methods 0.000 claims abstract description 25
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 14
- 229920001296 polysiloxane Polymers 0.000 claims description 15
- 229920002635 polyurethane Polymers 0.000 claims description 15
- 239000004814 polyurethane Substances 0.000 claims description 15
- -1 silicon Ketone Chemical class 0.000 claims description 13
- 239000000084 colloidal system Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000002518 antifoaming agent Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000002902 bimodal effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 239000012736 aqueous medium Substances 0.000 description 3
- 238000010979 pH adjustment Methods 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101100494264 Caenorhabditis elegans best-14 gene Proteins 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/975,890 | 2013-08-26 | ||
| US13/975,890 US9633831B2 (en) | 2013-08-26 | 2013-08-26 | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201512383A TW201512383A (zh) | 2015-04-01 |
| TWI646180B true TWI646180B (zh) | 2019-01-01 |
Family
ID=52446874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103126539A TWI646180B (zh) | 2013-08-26 | 2014-08-04 | 用於硏磨藍寶石表面之化學機械硏磨組成物及其使用方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9633831B2 (ja) |
| JP (1) | JP6437762B2 (ja) |
| KR (1) | KR102350734B1 (ja) |
| CN (1) | CN104416450A (ja) |
| DE (1) | DE102014010808A1 (ja) |
| FR (1) | FR3009802B1 (ja) |
| MY (1) | MY172434A (ja) |
| RU (1) | RU2661219C2 (ja) |
| TW (1) | TWI646180B (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6506913B2 (ja) * | 2014-03-31 | 2019-04-24 | ニッタ・ハース株式会社 | 研磨用組成物及び研磨方法 |
| JP2016155900A (ja) * | 2015-02-23 | 2016-09-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法及び硬脆材料基板の製造方法 |
| JPWO2016208301A1 (ja) * | 2015-06-26 | 2018-04-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN108136563A (zh) * | 2015-07-30 | 2018-06-08 | Jh罗得股份有限公司 | 聚合磨光材料、包含聚合磨光材料的介质和系统及其形成和使用方法 |
| JP2017039883A (ja) * | 2015-08-21 | 2017-02-23 | 日立化成株式会社 | サファイア用研磨液、貯蔵液及び研磨方法 |
| US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
| JP6974336B2 (ja) * | 2016-02-16 | 2021-12-01 | シーエムシー マテリアルズ，インコーポレイティド | Ｉｉｉ−ｖ族材料の研磨方法 |
| RU2635132C1 (ru) * | 2017-02-20 | 2017-11-09 | Общество с ограниченной ответственностью "Научно-технический центр "Компас" (ООО "НТЦ "Компас") | Полировальная суспензия для сапфировых подложек |
| SG10201904669TA (en) * | 2018-06-28 | 2020-01-30 | Kctech Co Ltd | Polishing Slurry Composition |
| BR112022001383A2 (pt) | 2019-07-31 | 2022-03-22 | Dig Labs Corp | Avaliação de saúde animal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW526250B (en) * | 2000-03-31 | 2003-04-01 | Bayer Ag | Polishing abrasive and process for producing planar layers |
| TW200635704A (en) * | 2005-03-04 | 2006-10-16 | Cabot Microelectronics Corp | Composition and method for polishing a sapphire surface |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356107A (en) * | 1979-11-26 | 1982-10-26 | Nalco Chemical Company | Process for preparing silica sols |
| US5385604A (en) * | 1993-12-20 | 1995-01-31 | Huntington Laboratories, Inc. | Germicide resistant floor finish |
| US5575706A (en) * | 1996-01-11 | 1996-11-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) apparatus and polish method |
| US6143662A (en) * | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
| US6190234B1 (en) * | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
| JP2001300285A (ja) * | 2000-04-18 | 2001-10-30 | Sanyo Chem Ind Ltd | 研磨用砥粒分散剤及び研磨用スラリー |
| KR100826072B1 (ko) * | 2000-05-12 | 2008-04-29 | 닛산 가가쿠 고교 가부시키 가이샤 | 연마용 조성물 |
| US6638328B1 (en) | 2002-04-25 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co. Ltd | Bimodal slurry system |
| US7201784B2 (en) * | 2003-06-30 | 2007-04-10 | Intel Corporation | Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low k dielectrics |
| US7485241B2 (en) | 2003-09-11 | 2009-02-03 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
| CN100335581C (zh) * | 2004-11-24 | 2007-09-05 | 中国科学院上海微系统与信息技术研究所 | 硫系相变材料化学机械抛光的无磨料抛光液及其应用 |
| US7294044B2 (en) | 2005-04-08 | 2007-11-13 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
| US7169031B1 (en) * | 2005-07-28 | 2007-01-30 | 3M Innovative Properties Company | Self-contained conditioning abrasive article |
| US20070117497A1 (en) * | 2005-11-22 | 2007-05-24 | Cabot Microelectronics Corporation | Friction reducing aid for CMP |
| US20130000214A1 (en) * | 2006-01-11 | 2013-01-03 | Jia-Ni Chu | Abrasive Particles for Chemical Mechanical Polishing |
| JP2007300070A (ja) * | 2006-04-05 | 2007-11-15 | Nippon Chem Ind Co Ltd | 半導体ウエハ研磨用エッチング液組成物、それを用いた研磨用組成物の製造方法、及び研磨加工方法 |
| US20080283502A1 (en) | 2006-05-26 | 2008-11-20 | Kevin Moeggenborg | Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates |
| JP2008044078A (ja) * | 2006-08-18 | 2008-02-28 | Sumitomo Metal Mining Co Ltd | サファイア基板の研磨方法 |
| US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| CN101681130A (zh) * | 2007-03-31 | 2010-03-24 | 高级技术材料公司 | 用于晶圆再生的材料剥除方法 |
| WO2008142093A1 (en) | 2007-05-24 | 2008-11-27 | Basf Se | Chemical-mechanical polishing composition comprising metal-organic framework materials |
| JP5098483B2 (ja) * | 2007-07-25 | 2012-12-12 | 住友金属鉱山株式会社 | サファイア基板の研磨方法 |
| WO2009042696A1 (en) | 2007-09-24 | 2009-04-02 | Qualcomm Incorporated | Method and apparatus for transmitting multiple multicast communications over a wireless communication network |
| WO2009046311A2 (en) * | 2007-10-05 | 2009-04-09 | Saint-Gobain Ceramics & Plastics, Inc. | Composite slurries of nano silicon carbide and alumina |
| WO2009046296A1 (en) * | 2007-10-05 | 2009-04-09 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
| JP2012504871A (ja) * | 2008-10-02 | 2012-02-23 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 高度な金属負荷及びシリコン基板の表面パッシベーションのための界面活性剤／消泡剤混合物の使用 |
| US20100159807A1 (en) * | 2008-12-22 | 2010-06-24 | Jinru Bian | Polymeric barrier removal polishing slurry |
| US8247328B2 (en) | 2009-05-04 | 2012-08-21 | Cabot Microelectronics Corporation | Polishing silicon carbide |
| TWI538989B (zh) * | 2010-09-08 | 2016-06-21 | 巴斯夫歐洲公司 | 水研磨組成物及用於化學機械研磨電子，機械及光學裝置基材的方法 |
| EP2614121B1 (en) * | 2010-09-08 | 2019-03-06 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| JPWO2012141111A1 (ja) * | 2011-04-11 | 2014-07-28 | 旭硝子株式会社 | 研磨剤および研磨方法 |
| US20120264303A1 (en) | 2011-04-15 | 2012-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing slurry, system and method |
| WO2013069623A1 (ja) * | 2011-11-08 | 2013-05-16 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
| CN102585705B (zh) | 2011-12-21 | 2014-02-05 | 上海新安纳电子科技有限公司 | 一种用于蓝宝石衬底的化学机械抛光液及其应用 |
| US9896604B2 (en) * | 2013-03-15 | 2018-02-20 | Ecolab Usa Inc. | Methods of polishing sapphire surfaces |
| US9388328B2 (en) * | 2013-08-23 | 2016-07-12 | Diamond Innovations, Inc. | Lapping slurry having a cationic surfactant |
-
2013
- 2013-08-26 US US13/975,890 patent/US9633831B2/en active Active
-
2014
- 2014-07-22 DE DE102014010808.2A patent/DE102014010808A1/de not_active Withdrawn
- 2014-08-04 TW TW103126539A patent/TWI646180B/zh active
- 2014-08-19 RU RU2014134056A patent/RU2661219C2/ru active
- 2014-08-19 CN CN201410408641.0A patent/CN104416450A/zh active Pending
- 2014-08-19 MY MYPI2014702300A patent/MY172434A/en unknown
- 2014-08-22 KR KR1020140109685A patent/KR102350734B1/ko active IP Right Grant
- 2014-08-25 JP JP2014170163A patent/JP6437762B2/ja active Active
- 2014-08-26 FR FR1457981A patent/FR3009802B1/fr not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW526250B (en) * | 2000-03-31 | 2003-04-01 | Bayer Ag | Polishing abrasive and process for producing planar layers |
| TW200635704A (en) * | 2005-03-04 | 2006-10-16 | Cabot Microelectronics Corp | Composition and method for polishing a sapphire surface |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2014134056A (ru) | 2016-03-10 |
| RU2661219C2 (ru) | 2018-07-13 |
| JP6437762B2 (ja) | 2018-12-12 |
| DE102014010808A1 (de) | 2015-02-26 |
| FR3009802A1 (fr) | 2015-02-27 |
| CN104416450A (zh) | 2015-03-18 |
| FR3009802B1 (fr) | 2018-04-20 |
| KR102350734B1 (ko) | 2022-01-12 |
| MY172434A (en) | 2019-11-25 |
| TW201512383A (zh) | 2015-04-01 |
| US9633831B2 (en) | 2017-04-25 |
| JP2015051497A (ja) | 2015-03-19 |
| US20150053642A1 (en) | 2015-02-26 |
| KR20150024275A (ko) | 2015-03-06 |
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