TWI639362B - 電漿處理系統內之離子能量分布控制 - Google Patents

電漿處理系統內之離子能量分布控制 Download PDF

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Publication number
TWI639362B
TWI639362B TW104131082A TW104131082A TWI639362B TW I639362 B TWI639362 B TW I639362B TW 104131082 A TW104131082 A TW 104131082A TW 104131082 A TW104131082 A TW 104131082A TW I639362 B TWI639362 B TW I639362B
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TW
Taiwan
Prior art keywords
electrode
substrate
plasma
processing system
plasma processing
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Application number
TW104131082A
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English (en)
Chinese (zh)
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TW201603651A (zh
Inventor
費雪安德里斯
哈得森艾瑞克
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蘭姆研究公司
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Publication of TW201603651A publication Critical patent/TW201603651A/zh
Application granted granted Critical
Publication of TWI639362B publication Critical patent/TWI639362B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
TW104131082A 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制 TWI639362B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 2009-12-10
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems

Publications (2)

Publication Number Publication Date
TW201603651A TW201603651A (zh) 2016-01-16
TWI639362B true TWI639362B (zh) 2018-10-21

Family

ID=42264351

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098143689A TWI516174B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制
TW104131082A TWI639362B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW098143689A TWI516174B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制

Country Status (8)

Country Link
US (1) US9887069B2 (fr)
EP (1) EP2380413A4 (fr)
JP (2) JP5888981B2 (fr)
KR (2) KR101679528B1 (fr)
CN (1) CN102257886B (fr)
SG (1) SG171843A1 (fr)
TW (2) TWI516174B (fr)
WO (1) WO2010080421A2 (fr)

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WO2019099925A1 (fr) 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Commande spatiale et temporelle de tension de polarisation ionique pour traitement au plasma
CN108333453B (zh) * 2018-03-20 2020-11-10 江苏邦士医疗科技有限公司 降低信号源内部冲击电流及等离子体产生的软件处理算法
KR102592922B1 (ko) * 2018-06-21 2023-10-23 삼성전자주식회사 기판 처리 장치, 신호 소스 장치, 물질막의 처리 방법, 및 반도체 소자의 제조 방법
KR102600003B1 (ko) 2018-10-30 2023-11-09 삼성전자주식회사 반도체 공정 챔버 및 반도체 소자의 제조 방법
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20200086826A (ko) * 2019-01-10 2020-07-20 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
JP2022541004A (ja) 2019-07-12 2022-09-21 エーイーエス グローバル ホールディングス， プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
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Also Published As

Publication number Publication date
CN102257886A (zh) 2011-11-23
JP2012513124A (ja) 2012-06-07
KR20110112804A (ko) 2011-10-13
JP5883481B2 (ja) 2016-03-15
SG171843A1 (en) 2011-07-28
US9887069B2 (en) 2018-02-06
KR101679528B1 (ko) 2016-11-24
JP2015029104A (ja) 2015-02-12
TW201031279A (en) 2010-08-16
WO2010080421A3 (fr) 2010-08-26
EP2380413A2 (fr) 2011-10-26
KR20150103304A (ko) 2015-09-09
CN102257886B (zh) 2014-09-17
KR101650972B1 (ko) 2016-08-24
EP2380413A4 (fr) 2015-12-02
WO2010080421A2 (fr) 2010-07-15
JP5888981B2 (ja) 2016-03-22
TW201603651A (zh) 2016-01-16
WO2010080421A4 (fr) 2010-10-07
US20100154994A1 (en) 2010-06-24
TWI516174B (zh) 2016-01-01

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