TWI638379B - 離子植入系統和減少粒子污染的方法 - Google Patents
離子植入系統和減少粒子污染的方法 Download PDFInfo
- Publication number
- TWI638379B TWI638379B TW103116029A TW103116029A TWI638379B TW I638379 B TWI638379 B TW I638379B TW 103116029 A TW103116029 A TW 103116029A TW 103116029 A TW103116029 A TW 103116029A TW I638379 B TWI638379 B TW I638379B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion
- voltage
- ion source
- workpiece
- electrode
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 42
- 238000011109 contamination Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000002245 particle Substances 0.000 title claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 144
- 238000000605 extraction Methods 0.000 claims abstract description 84
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 71
- 230000001629 suppression Effects 0.000 claims abstract description 62
- 238000012546 transfer Methods 0.000 claims abstract description 12
- 238000010891 electric arc Methods 0.000 claims abstract description 10
- 239000007943 implant Substances 0.000 claims description 13
- 230000001939 inductive effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 37
- 239000007789 gas Substances 0.000 description 21
- 238000002513 implantation Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000012212 insulator Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000012636 effector Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- -1 gap 342 Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/886,963 US9006690B2 (en) | 2013-05-03 | 2013-05-03 | Extraction electrode assembly voltage modulation in an ion implantation system |
| US13/886,963 | 2013-05-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201506982A TW201506982A (zh) | 2015-02-16 |
| TWI638379B true TWI638379B (zh) | 2018-10-11 |
Family
ID=50897927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103116029A TWI638379B (zh) | 2013-05-03 | 2014-05-05 | 離子植入系統和減少粒子污染的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9006690B2 (enExample) |
| JP (2) | JP2016524277A (enExample) |
| KR (1) | KR102213049B1 (enExample) |
| CN (1) | CN105474349B (enExample) |
| TW (1) | TWI638379B (enExample) |
| WO (1) | WO2014179687A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9748072B2 (en) * | 2014-06-23 | 2017-08-29 | Advanced Ion Beam Technology, Inc. | Lower dose rate ion implantation using a wider ion beam |
| US9214318B1 (en) * | 2014-07-25 | 2015-12-15 | International Business Machines Corporation | Electromagnetic electron reflector |
| US9318302B1 (en) * | 2015-03-31 | 2016-04-19 | Axcelis Technologies, Inc. | Integrated extraction electrode manipulator for ion source |
| US9978555B2 (en) | 2015-11-05 | 2018-05-22 | Axcelis Technologies, Inc. | Ion source liner having a lip for ion implantation systems |
| US10074508B2 (en) | 2015-11-10 | 2018-09-11 | Axcelis Technologies, Inc. | Low conductance self-shielding insulator for ion implantation systems |
| WO2017127525A1 (en) | 2016-01-19 | 2017-07-27 | Axcelis Technologies, Inc. | Improved ion source cathode shield |
| US9870893B2 (en) * | 2016-01-19 | 2018-01-16 | Axcelis Technologies, Inc. | Multi-piece electrode aperture |
| US10361069B2 (en) | 2016-04-04 | 2019-07-23 | Axcelis Technologies, Inc. | Ion source repeller shield comprising a labyrinth seal |
| US10074514B1 (en) * | 2017-09-08 | 2018-09-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for improved ion beam current |
| JP7104898B2 (ja) * | 2019-03-01 | 2022-07-22 | 日新イオン機器株式会社 | イオン源およびそのクリーニング方法 |
| DE102019107367A1 (de) * | 2019-03-22 | 2020-09-24 | Vaillant Gmbh | Verfahren zum Prüfen des Vorhandenseins einer Rückschlagklappe in einer Heizungsanlage |
| US12020896B2 (en) * | 2020-07-31 | 2024-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Insulator for an ion implantation source |
| US11651932B1 (en) * | 2021-10-26 | 2023-05-16 | Applied Materials, Inc. | Mismatched optics for angular control of extracted ion beam |
| JP7684922B2 (ja) * | 2022-03-09 | 2025-05-28 | 株式会社東芝 | 半導体装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554854A (en) * | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
| TW200504784A (en) * | 2003-06-06 | 2005-02-01 | Sumitomo Eaton Nova | Ion source apparatus and cleaning optimized method thereof |
| TW200849309A (en) * | 2007-03-29 | 2008-12-16 | Varian Semiconductor Equipment | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| TW201205636A (en) * | 2010-04-06 | 2012-02-01 | Axcelis Tech Inc | In-vacuum beam defining aperture cleaning for particle reduction |
| CN102376513A (zh) * | 2010-08-11 | 2012-03-14 | 日新离子机器株式会社 | 离子源电极的清洗方法 |
| JP2013511128A (ja) * | 2009-11-11 | 2013-03-28 | アクセリス テクノロジーズ， インコーポレイテッド | 残留物を清浄する方法および装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3427450B2 (ja) * | 1993-10-19 | 2003-07-14 | 日新電機株式会社 | イオン源装置 |
| US5497006A (en) * | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
| US5661308A (en) * | 1996-05-30 | 1997-08-26 | Eaton Corporation | Method and apparatus for ion formation in an ion implanter |
| US6452338B1 (en) * | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
| US6501078B1 (en) * | 2000-03-16 | 2002-12-31 | Applied Materials, Inc. | Ion extraction assembly |
| US6559462B1 (en) * | 2000-10-31 | 2003-05-06 | International Business Machines Corporation | Method to reduce downtime while implanting GeF4 |
| JP4502191B2 (ja) * | 2004-06-18 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | イオンビーム引出電極およびイオン注入装置 |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US7566887B2 (en) * | 2007-01-03 | 2009-07-28 | Axcelis Technologies Inc. | Method of reducing particle contamination for ion implanters |
| US7915597B2 (en) * | 2008-03-18 | 2011-03-29 | Axcelis Technologies, Inc. | Extraction electrode system for high current ion implanter |
| JP5672297B2 (ja) * | 2012-06-22 | 2015-02-18 | 日新イオン機器株式会社 | イオンビーム照射装置およびイオンビーム照射装置の運転方法 |
| US9530615B2 (en) * | 2012-08-07 | 2016-12-27 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source |
| US20140127394A1 (en) * | 2012-11-07 | 2014-05-08 | Varian Semiconductor Equipment Associates, Inc. | Reducing Glitching In An Ion Implanter |
-
2013
- 2013-05-03 US US13/886,963 patent/US9006690B2/en active Active
-
2014
- 2014-05-02 JP JP2016512969A patent/JP2016524277A/ja active Pending
- 2014-05-02 CN CN201480025170.3A patent/CN105474349B/zh active Active
- 2014-05-02 WO PCT/US2014/036578 patent/WO2014179687A1/en not_active Ceased
- 2014-05-02 KR KR1020157034421A patent/KR102213049B1/ko not_active Expired - Fee Related
- 2014-05-05 TW TW103116029A patent/TWI638379B/zh not_active IP Right Cessation
-
2019
- 2019-10-18 JP JP2019190989A patent/JP6931686B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554854A (en) * | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
| TW200504784A (en) * | 2003-06-06 | 2005-02-01 | Sumitomo Eaton Nova | Ion source apparatus and cleaning optimized method thereof |
| TW200849309A (en) * | 2007-03-29 | 2008-12-16 | Varian Semiconductor Equipment | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| JP2013511128A (ja) * | 2009-11-11 | 2013-03-28 | アクセリス テクノロジーズ， インコーポレイテッド | 残留物を清浄する方法および装置 |
| TW201205636A (en) * | 2010-04-06 | 2012-02-01 | Axcelis Tech Inc | In-vacuum beam defining aperture cleaning for particle reduction |
| CN102376513A (zh) * | 2010-08-11 | 2012-03-14 | 日新离子机器株式会社 | 离子源电极的清洗方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9006690B2 (en) | 2015-04-14 |
| CN105474349A (zh) | 2016-04-06 |
| KR102213049B1 (ko) | 2021-02-05 |
| CN105474349B (zh) | 2018-02-02 |
| TW201506982A (zh) | 2015-02-16 |
| KR20160005095A (ko) | 2016-01-13 |
| JP6931686B2 (ja) | 2021-09-08 |
| JP2016524277A (ja) | 2016-08-12 |
| JP2020024931A (ja) | 2020-02-13 |
| US20140326901A1 (en) | 2014-11-06 |
| WO2014179687A1 (en) | 2014-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |