CN105474349B - 离子注入系统中引出电极组件的电压调制 - Google Patents

离子注入系统中引出电极组件的电压调制 Download PDF

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Publication number
CN105474349B
CN105474349B CN201480025170.3A CN201480025170A CN105474349B CN 105474349 B CN105474349 B CN 105474349B CN 201480025170 A CN201480025170 A CN 201480025170A CN 105474349 B CN105474349 B CN 105474349B
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China
Prior art keywords
ion
workpiece
extraction electrode
electrode
voltage
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CN201480025170.3A
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English (en)
Chinese (zh)
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CN105474349A (zh
Inventor
尼尔·科尔文
张锦程
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201480025170.3A 2013-05-03 2014-05-02 离子注入系统中引出电极组件的电压调制 Active CN105474349B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/886,963 US9006690B2 (en) 2013-05-03 2013-05-03 Extraction electrode assembly voltage modulation in an ion implantation system
US13/886,963 2013-05-03
PCT/US2014/036578 WO2014179687A1 (en) 2013-05-03 2014-05-02 Extraction electrode assembly voltage modulation in an ion implantation system

Publications (2)

Publication Number Publication Date
CN105474349A CN105474349A (zh) 2016-04-06
CN105474349B true CN105474349B (zh) 2018-02-02

Family

ID=50897927

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480025170.3A Active CN105474349B (zh) 2013-05-03 2014-05-02 离子注入系统中引出电极组件的电压调制

Country Status (6)

Country Link
US (1) US9006690B2 (enExample)
JP (2) JP2016524277A (enExample)
KR (1) KR102213049B1 (enExample)
CN (1) CN105474349B (enExample)
TW (1) TWI638379B (enExample)
WO (1) WO2014179687A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748072B2 (en) * 2014-06-23 2017-08-29 Advanced Ion Beam Technology, Inc. Lower dose rate ion implantation using a wider ion beam
US9214318B1 (en) * 2014-07-25 2015-12-15 International Business Machines Corporation Electromagnetic electron reflector
US9318302B1 (en) * 2015-03-31 2016-04-19 Axcelis Technologies, Inc. Integrated extraction electrode manipulator for ion source
US9978555B2 (en) 2015-11-05 2018-05-22 Axcelis Technologies, Inc. Ion source liner having a lip for ion implantation systems
US10074508B2 (en) 2015-11-10 2018-09-11 Axcelis Technologies, Inc. Low conductance self-shielding insulator for ion implantation systems
WO2017127525A1 (en) 2016-01-19 2017-07-27 Axcelis Technologies, Inc. Improved ion source cathode shield
US9870893B2 (en) * 2016-01-19 2018-01-16 Axcelis Technologies, Inc. Multi-piece electrode aperture
US10361069B2 (en) 2016-04-04 2019-07-23 Axcelis Technologies, Inc. Ion source repeller shield comprising a labyrinth seal
US10074514B1 (en) * 2017-09-08 2018-09-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for improved ion beam current
JP7104898B2 (ja) * 2019-03-01 2022-07-22 日新イオン機器株式会社 イオン源およびそのクリーニング方法
DE102019107367A1 (de) * 2019-03-22 2020-09-24 Vaillant Gmbh Verfahren zum Prüfen des Vorhandenseins einer Rückschlagklappe in einer Heizungsanlage
US12020896B2 (en) * 2020-07-31 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Insulator for an ion implantation source
US11651932B1 (en) * 2021-10-26 2023-05-16 Applied Materials, Inc. Mismatched optics for angular control of extracted ion beam
JP7684922B2 (ja) * 2022-03-09 2025-05-28 株式会社東芝 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US20050016838A1 (en) * 2003-06-06 2005-01-27 Hirohiko Murata Ion source apparatus and cleaning optimized method thereof
CN101681782A (zh) * 2007-03-29 2010-03-24 瓦里安半导体设备公司 具有气体混合的离子源的效能改良与生命期延长的技术
TW201205636A (en) * 2010-04-06 2012-02-01 Axcelis Tech Inc In-vacuum beam defining aperture cleaning for particle reduction
CN102376513A (zh) * 2010-08-11 2012-03-14 日新离子机器株式会社 离子源电极的清洗方法
CN102612731A (zh) * 2009-11-11 2012-07-25 艾克塞利斯科技公司 用于从离子源部件清除残余物的方法和设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3427450B2 (ja) * 1993-10-19 2003-07-14 日新電機株式会社 イオン源装置
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
US6559462B1 (en) * 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
JP4502191B2 (ja) * 2004-06-18 2010-07-14 ルネサスエレクトロニクス株式会社 イオンビーム引出電極およびイオン注入装置
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US7566887B2 (en) * 2007-01-03 2009-07-28 Axcelis Technologies Inc. Method of reducing particle contamination for ion implanters
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
JP5672297B2 (ja) * 2012-06-22 2015-02-18 日新イオン機器株式会社 イオンビーム照射装置およびイオンビーム照射装置の運転方法
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US20140127394A1 (en) * 2012-11-07 2014-05-08 Varian Semiconductor Equipment Associates, Inc. Reducing Glitching In An Ion Implanter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US20050016838A1 (en) * 2003-06-06 2005-01-27 Hirohiko Murata Ion source apparatus and cleaning optimized method thereof
CN101681782A (zh) * 2007-03-29 2010-03-24 瓦里安半导体设备公司 具有气体混合的离子源的效能改良与生命期延长的技术
CN102612731A (zh) * 2009-11-11 2012-07-25 艾克塞利斯科技公司 用于从离子源部件清除残余物的方法和设备
TW201205636A (en) * 2010-04-06 2012-02-01 Axcelis Tech Inc In-vacuum beam defining aperture cleaning for particle reduction
CN102376513A (zh) * 2010-08-11 2012-03-14 日新离子机器株式会社 离子源电极的清洗方法

Also Published As

Publication number Publication date
US9006690B2 (en) 2015-04-14
TWI638379B (zh) 2018-10-11
CN105474349A (zh) 2016-04-06
KR102213049B1 (ko) 2021-02-05
TW201506982A (zh) 2015-02-16
KR20160005095A (ko) 2016-01-13
JP6931686B2 (ja) 2021-09-08
JP2016524277A (ja) 2016-08-12
JP2020024931A (ja) 2020-02-13
US20140326901A1 (en) 2014-11-06
WO2014179687A1 (en) 2014-11-06

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