JP2016524277A - イオン注入システムにおける抽出電極アッセンブリの電圧変調 - Google Patents

イオン注入システムにおける抽出電極アッセンブリの電圧変調 Download PDF

Info

Publication number
JP2016524277A
JP2016524277A JP2016512969A JP2016512969A JP2016524277A JP 2016524277 A JP2016524277 A JP 2016524277A JP 2016512969 A JP2016512969 A JP 2016512969A JP 2016512969 A JP2016512969 A JP 2016512969A JP 2016524277 A JP2016524277 A JP 2016524277A
Authority
JP
Japan
Prior art keywords
ion
ion source
workpiece
voltage
extraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016512969A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016524277A5 (enExample
Inventor
コルヴィン，ニール
ツァン，ジンチェン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of JP2016524277A publication Critical patent/JP2016524277A/ja
Publication of JP2016524277A5 publication Critical patent/JP2016524277A5/ja
Priority to JP2019190989A priority Critical patent/JP6931686B2/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2016512969A 2013-05-03 2014-05-02 イオン注入システムにおける抽出電極アッセンブリの電圧変調 Pending JP2016524277A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019190989A JP6931686B2 (ja) 2013-05-03 2019-10-18 イオン注入システムにおける抽出電極アセンブリの電圧変調

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/886,963 US9006690B2 (en) 2013-05-03 2013-05-03 Extraction electrode assembly voltage modulation in an ion implantation system
US13/886,963 2013-05-03
PCT/US2014/036578 WO2014179687A1 (en) 2013-05-03 2014-05-02 Extraction electrode assembly voltage modulation in an ion implantation system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019190989A Division JP6931686B2 (ja) 2013-05-03 2019-10-18 イオン注入システムにおける抽出電極アセンブリの電圧変調

Publications (2)

Publication Number Publication Date
JP2016524277A true JP2016524277A (ja) 2016-08-12
JP2016524277A5 JP2016524277A5 (enExample) 2018-06-28

Family

ID=50897927

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016512969A Pending JP2016524277A (ja) 2013-05-03 2014-05-02 イオン注入システムにおける抽出電極アッセンブリの電圧変調
JP2019190989A Active JP6931686B2 (ja) 2013-05-03 2019-10-18 イオン注入システムにおける抽出電極アセンブリの電圧変調

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019190989A Active JP6931686B2 (ja) 2013-05-03 2019-10-18 イオン注入システムにおける抽出電極アセンブリの電圧変調

Country Status (6)

Country Link
US (1) US9006690B2 (enExample)
JP (2) JP2016524277A (enExample)
KR (1) KR102213049B1 (enExample)
CN (1) CN105474349B (enExample)
TW (1) TWI638379B (enExample)
WO (1) WO2014179687A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020533733A (ja) * 2017-09-08 2020-11-19 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入のための装置、システムおよび方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748072B2 (en) * 2014-06-23 2017-08-29 Advanced Ion Beam Technology, Inc. Lower dose rate ion implantation using a wider ion beam
US9214318B1 (en) * 2014-07-25 2015-12-15 International Business Machines Corporation Electromagnetic electron reflector
US9318302B1 (en) * 2015-03-31 2016-04-19 Axcelis Technologies, Inc. Integrated extraction electrode manipulator for ion source
US9978555B2 (en) 2015-11-05 2018-05-22 Axcelis Technologies, Inc. Ion source liner having a lip for ion implantation systems
US10074508B2 (en) 2015-11-10 2018-09-11 Axcelis Technologies, Inc. Low conductance self-shielding insulator for ion implantation systems
WO2017127525A1 (en) 2016-01-19 2017-07-27 Axcelis Technologies, Inc. Improved ion source cathode shield
US9870893B2 (en) * 2016-01-19 2018-01-16 Axcelis Technologies, Inc. Multi-piece electrode aperture
US10361069B2 (en) 2016-04-04 2019-07-23 Axcelis Technologies, Inc. Ion source repeller shield comprising a labyrinth seal
JP7104898B2 (ja) * 2019-03-01 2022-07-22 日新イオン機器株式会社 イオン源およびそのクリーニング方法
DE102019107367A1 (de) * 2019-03-22 2020-09-24 Vaillant Gmbh Verfahren zum Prüfen des Vorhandenseins einer Rückschlagklappe in einer Heizungsanlage
US12020896B2 (en) * 2020-07-31 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Insulator for an ion implantation source
US11651932B1 (en) * 2021-10-26 2023-05-16 Applied Materials, Inc. Mismatched optics for angular control of extracted ion beam
JP7684922B2 (ja) * 2022-03-09 2025-05-28 株式会社東芝 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559462B1 (en) * 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
JP2004363050A (ja) * 2003-06-06 2004-12-24 Sumitomo Eaton Noba Kk イオン源装置およびそのクリーニング最適化方法
JP2012038668A (ja) * 2010-08-11 2012-02-23 Nissin Ion Equipment Co Ltd イオン源電極のクリーニング方法
JP2014026955A (ja) * 2012-06-22 2014-02-06 Nissin Ion Equipment Co Ltd イオンビーム照射装置およびイオンビーム照射装置の運転方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3427450B2 (ja) * 1993-10-19 2003-07-14 日新電機株式会社 イオン源装置
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
JP4502191B2 (ja) * 2004-06-18 2010-07-14 ルネサスエレクトロニクス株式会社 イオンビーム引出電極およびイオン注入装置
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US7566887B2 (en) * 2007-01-03 2009-07-28 Axcelis Technologies Inc. Method of reducing particle contamination for ion implanters
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
US20110108058A1 (en) * 2009-11-11 2011-05-12 Axcelis Technologies, Inc. Method and apparatus for cleaning residue from an ion source component
US8604418B2 (en) * 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US20140127394A1 (en) * 2012-11-07 2014-05-08 Varian Semiconductor Equipment Associates, Inc. Reducing Glitching In An Ion Implanter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559462B1 (en) * 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
JP2004363050A (ja) * 2003-06-06 2004-12-24 Sumitomo Eaton Noba Kk イオン源装置およびそのクリーニング最適化方法
JP2012038668A (ja) * 2010-08-11 2012-02-23 Nissin Ion Equipment Co Ltd イオン源電極のクリーニング方法
JP2014026955A (ja) * 2012-06-22 2014-02-06 Nissin Ion Equipment Co Ltd イオンビーム照射装置およびイオンビーム照射装置の運転方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020533733A (ja) * 2017-09-08 2020-11-19 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入のための装置、システムおよび方法
JP7268003B2 (ja) 2017-09-08 2023-05-02 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入のための装置、システムおよび方法

Also Published As

Publication number Publication date
US9006690B2 (en) 2015-04-14
TWI638379B (zh) 2018-10-11
CN105474349A (zh) 2016-04-06
KR102213049B1 (ko) 2021-02-05
CN105474349B (zh) 2018-02-02
TW201506982A (zh) 2015-02-16
KR20160005095A (ko) 2016-01-13
JP6931686B2 (ja) 2021-09-08
JP2020024931A (ja) 2020-02-13
US20140326901A1 (en) 2014-11-06
WO2014179687A1 (en) 2014-11-06

Similar Documents

Publication Publication Date Title
JP6931686B2 (ja) イオン注入システムにおける抽出電極アセンブリの電圧変調
JP2016524277A5 (enExample)
US6777696B1 (en) Deflecting acceleration/deceleration gap
US8089052B2 (en) Ion source with adjustable aperture
JP5689415B2 (ja) イオン注入システムにおけるディセル後の磁気エネルギーフィルター
CN101849275B (zh) 用于离子束注入机的等离子体电子流
CN1922707B (zh) 调制离子束电流
JPH0936059A (ja) イオン注入装置、その内側表面からの汚染物質の除去方法とそのための除去装置
JP2010503964A (ja) イオン注入装置におけるビーム角調整システムおよびその調整方法
JP2018507506A (ja) イオン注入用の複合静電レンズシステム
CN100375218C (zh) 用于相对离子束移除污染粒子的系统及方法
JP7492516B2 (ja) イオン源のためのテトロード引出装置
US6891173B2 (en) Ion implantation systems and methods utilizing a downstream gas source
US20100019141A1 (en) Energy contamination monitor with neutral current detection

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180220

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20180517

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181030

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190618