TWI631783B - 用於可調式雷射的混合整合之方法與系統 - Google Patents
用於可調式雷射的混合整合之方法與系統 Download PDFInfo
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- TWI631783B TWI631783B TW105134037A TW105134037A TWI631783B TW I631783 B TWI631783 B TW I631783B TW 105134037 A TW105134037 A TW 105134037A TW 105134037 A TW105134037 A TW 105134037A TW I631783 B TWI631783 B TW I631783B
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- Prior art keywords
- layer
- bonding
- germanium
- compound semiconductor
- interface
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Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10053—Phase control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
- H01S5/02446—Cooling being separate from the laser chip cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25113209P | 2009-10-13 | 2009-10-13 | |
| US25114309P | 2009-10-13 | 2009-10-13 | |
| US61/251,132 | 2009-10-13 | ||
| US61/251,143 | 2009-10-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201707319A TW201707319A (zh) | 2017-02-16 |
| TWI631783B true TWI631783B (zh) | 2018-08-01 |
Family
ID=43876470
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105134037A TWI631783B (zh) | 2009-10-13 | 2010-10-13 | 用於可調式雷射的混合整合之方法與系統 |
| TW099134939A TWI569548B (zh) | 2009-10-13 | 2010-10-13 | 用於可調式雷射的混合整合之方法與系統 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099134939A TWI569548B (zh) | 2009-10-13 | 2010-10-13 | 用於可調式雷射的混合整合之方法與系統 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2489106B1 (https=) |
| JP (1) | JP2013507792A (https=) |
| KR (1) | KR101803982B1 (https=) |
| TW (2) | TWI631783B (https=) |
| WO (1) | WO2011046898A1 (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8630326B2 (en) | 2009-10-13 | 2014-01-14 | Skorpios Technologies, Inc. | Method and system of heterogeneous substrate bonding for photonic integration |
| US9318868B2 (en) | 2011-09-07 | 2016-04-19 | Skorpios Technologies, Inc. | Tunable hybrid laser with carrier-induced phase control |
| US11181688B2 (en) | 2009-10-13 | 2021-11-23 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
| US8605766B2 (en) | 2009-10-13 | 2013-12-10 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a mach zehnder modulator |
| US9923105B2 (en) * | 2013-10-09 | 2018-03-20 | Skorpios Technologies, Inc. | Processing of a direct-bandgap chip after bonding to a silicon photonic device |
| US8867578B2 (en) | 2009-10-13 | 2014-10-21 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser for a cable TV transmitter |
| US9316785B2 (en) | 2013-10-09 | 2016-04-19 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
| US8611388B2 (en) | 2009-10-13 | 2013-12-17 | Skorpios Technologies, Inc. | Method and system for heterogeneous substrate bonding of waveguide receivers |
| US8559470B2 (en) | 2009-10-13 | 2013-10-15 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a phase modulator |
| US8368995B2 (en) | 2009-10-13 | 2013-02-05 | Skorpios Technologies, Inc. | Method and system for hybrid integration of an opto-electronic integrated circuit |
| US8615025B2 (en) | 2009-10-13 | 2013-12-24 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser |
| US8859394B2 (en) * | 2012-01-18 | 2014-10-14 | Skorpios Technologies, Inc. | Vertical integration of CMOS electronics with photonic devices |
| US9922967B2 (en) | 2010-12-08 | 2018-03-20 | Skorpios Technologies, Inc. | Multilevel template assisted wafer bonding |
| US9977188B2 (en) | 2011-08-30 | 2018-05-22 | Skorpios Technologies, Inc. | Integrated photonics mode expander |
| US9461770B2 (en) | 2013-09-12 | 2016-10-04 | Skorpios Technologies, Inc. | Method and system for floating grid transceiver |
| JP6241919B2 (ja) * | 2013-09-30 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 光学半導体デバイス |
| GB201319207D0 (en) * | 2013-10-31 | 2013-12-18 | Ibm | Photonic circuit device with on-chip optical gain measurement structures |
| EP3114515B1 (en) | 2014-03-07 | 2024-06-05 | Skorpios Technologies, Inc. | Directional semiconductor waveguide coupler |
| US9664855B2 (en) | 2014-03-07 | 2017-05-30 | Skorpios Technologies, Inc. | Wide shoulder, high order mode filter for thick-silicon waveguides |
| US10003173B2 (en) | 2014-04-23 | 2018-06-19 | Skorpios Technologies, Inc. | Widely tunable laser control |
| US9658401B2 (en) | 2014-05-27 | 2017-05-23 | Skorpios Technologies, Inc. | Waveguide mode expander having an amorphous-silicon shoulder |
| WO2016007860A1 (en) | 2014-07-11 | 2016-01-14 | Acacia Communications, Inc. | Integrated high-power tunable laser with adjustable outputs |
| EP3051638A1 (en) * | 2015-01-27 | 2016-08-03 | Huawei Technologies Co., Ltd. | Tunable laser and method of tuning a laser |
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| JP2013507792A (ja) | 2013-03-04 |
| TWI569548B (zh) | 2017-02-01 |
| EP2489106A1 (en) | 2012-08-22 |
| WO2011046898A1 (en) | 2011-04-21 |
| EP2489106B1 (en) | 2021-02-17 |
| TW201707319A (zh) | 2017-02-16 |
| TW201140975A (en) | 2011-11-16 |
| KR101803982B1 (ko) | 2017-12-01 |
| KR20120089721A (ko) | 2012-08-13 |
| EP2489106A4 (en) | 2018-01-17 |
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