TWI630741B - 形成有機發光二極體裝置之方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000004888 barrier function Effects 0.000 claims abstract description 62
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 claims 2
- 229910004541 SiN Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 113
- 239000007789 gas Substances 0.000 description 15
- 239000012044 organic layer Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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Abstract
形成OLED裝置之方法係被描述。具有夾置(sandwich)在障壁層之間的緩衝層之密封層係被沉積在OLED結構上。緩衝層係沉積在第一障壁層上,且係在低於攝氏100度的溫度下以含氟電漿被固化。第二障壁層係接著被沉積在緩衝層上。
Description
本發明實施例大致上是有關於形成有機發光二極體(organic light emitting diode,OLED)裝置之方法,且特別是有關於密封(encapsulating)OLED結構之方法。
OLED係用於電視螢幕、電腦顯示器、行動電話、其他手持裝置等的製造,用以顯示資訊。相較於液晶顯示器(liquid crystal display,LCD),OLED顯示器因其快速的反應時間、較大的視角、較高的對比、較輕的重量、低耗能、及適用於可撓式(flexible)基板,近來在顯示應用上已引起高度興趣。
OLED結構具有有限的壽命(lifetime),其可藉由電致發光(electroluminescence)效率的減少以及驅動電壓的增加之特點顯現出來。OLED結構劣化的主因是由於溼氣或氧氣的進入而形成的非發光(non-emissive)黑點。基於此原因,OLED結構一般係藉由夾置(sandwich)在非有機層之間的有機層所密封。有機層係用於填滿在第一非有機層中的任何空隙(void)或缺陷,以使第二非有機層具有實質上均勻的表面或沉積。
因此,一種用於密封OLED結構的改良方法與設備是有需要的。
形成OLED裝置之方法係被描述。具有夾置在障壁層之間的緩衝層之密封層係被沉積在OLED結構上。緩衝層係沉積在第一障壁層上,且係在低於攝氏100度的溫度下以含氟(fluorinated)電漿被固化。第二障壁層係接著被沉積在緩衝層上。
在一實施例中,一種形成OLED裝置之方法係被揭露。此方法包括沉積一第一障壁層於一基板的一區域上,基板具有一OLED結構設置在其上;沉積一緩衝層於第一障壁層上;以一含氟(fluorine-containing)電漿在低於約攝氏100度的溫度下固化(cure)該緩衝層;以及沉積一第二障壁層於固化之該緩衝層上。
在另一實施例中,一種形成OLED裝置之方法係被揭露。此方法包括:沉積一第一障壁層於一基板的一區域上,基板具有一OLED結構設置在其上;沉積一緩衝層於該第一障壁層上;以一含氟電漿固化該緩衝層約2分鐘;以及沉積一第二障壁層於固化之該緩衝層上。
100‧‧‧腔室
102‧‧‧側壁
104‧‧‧底部
106‧‧‧噴頭
108‧‧‧狹縫閥門開口
110‧‧‧真空幫浦
112‧‧‧背板
114‧‧‧突架
116‧‧‧致動器
118‧‧‧基板承載件
120‧‧‧基板
122‧‧‧頂針
124‧‧‧加熱及/或冷卻元件
126‧‧‧RF返回帶
128‧‧‧RF來源
130‧‧‧遠端電漿來源
132‧‧‧氣體來源
134‧‧‧噴頭懸架
136‧‧‧唇緣
150‧‧‧固定機制
190‧‧‧匹配網路
200‧‧‧方法
202~212‧‧‧製程
300‧‧‧基板
302‧‧‧接觸層
304‧‧‧OLED結構
305‧‧‧部位
307‧‧‧開口
308‧‧‧第一障壁層
308a‧‧‧第一障壁層的第一部位
308b‧‧‧第一障壁層的第二部位
309‧‧‧遮罩
312‧‧‧緩衝層
312a‧‧‧緩衝層的第一部位
312b‧‧‧緩衝層的第二部位
313‧‧‧固化之緩衝層
313a‧‧‧固化之緩衝層之第一部位
313b‧‧‧固化之緩衝層之第二部位
314‧‧‧第二障壁層
314a‧‧‧第二障壁層的第一部位
314b‧‧‧第二障壁層的第二部位
因此,為了對本創揭露作之上述特徵態樣有更詳細的瞭解,本創作較具體說明除上述摘要說明外特舉實施例供參詳,其中一些實施例並配合所附圖式作說明。然而,請瞭解所附圖式僅述明本創作一般實施例,而非被認為用來限定其範圍,因
本揭露能用於其他均等有效之實施例。
第1圖繪示可用於執行此處所述之操作之PECVD設備的剖面示意圖。
第2圖繪示依照本發明一實施例之形成OLED裝置之方法的流程圖。
第3A-3D圖繪示在第2圖之方法的不同階段期間OLED裝置的剖面示意圖。
為幫助了解,相同的參考數字係被使用(若可能的話),以代表圖式中共同之相同元件。請了解雖未特別述明,然在一實施例中所揭露的元件也可被妥善地利用在其他實施例中。
形成OLED裝置之方法係被描述。密封層具有夾置在障壁層之間的緩衝層,密封層係被沉積在OLED結構上。緩衝層係沉積在第一障壁層,且係以含氟電漿而在低於攝氏100度的溫度被固化。第二障壁層係接著被沉積在緩衝層上。
第1圖繪示可用於執行此處所述之操作之電漿增強化學氣相沉積(plasma enhanced chemical vapor deposition,PECVD)設備的剖面示意圖。此設備包含一腔室100,其中一個或多個膜可被沉積在一基板120上。腔室100一般包含側壁102、底部104、及噴頭(showerhead)106,其定義處理空間(process volume)。基板承載件118係設置在處理空間之中。經由一狹縫閥門開口(slit valve opening)108,可以進出(access)處理空間,以使基板120可
被移入或移出腔室100。基板承載件118可被耦接至致動器116,以升起與降下基板承載件118。頂針122係可移動地設置穿過基板承載件118,以將基板120移至基板接收表面,或將基材從基材接收表面移開。基板承載件118也可包含加熱及/或冷卻元件124,以維持基板承載件118在所需的溫度。基板承載件118也可包含RF返回帶(return strap)126,以提供RF返回路徑在基板承載件118的周邊。
噴頭106係藉由一固定機制150耦接至背板112。噴頭106可藉由一個或多個固定機制150耦接至背板112,以協助避免下垂(sag)及/或控制噴頭106的筆直/彎曲(straightness/curvature)。
氣體來源132係耦接至背板112,以經過噴頭106中的氣體通道提供氣體到達噴頭106與基板120之間的處理區域。真空幫浦110係耦接至腔室100,以維持處理空間在所需的壓力。RF來源128係經由匹配網路190耦接至背板112及/或至噴頭106,以提供RF電流至噴頭106。RF電流產生電場在噴頭106與基板承載件118之間,以使電漿可從噴頭106與基板承載件118之間的氣體產生。
遠端電漿來源130例如是電感性(incutviely)耦合之遠端電漿來源130,也可被耦接在氣體來源132與背板112之間。在不同基板的處理間隔之間,清潔氣體可被提供至遠端電漿來源130,以使遠端電漿可被產生。自遠端電漿而來的自由基(radical)
可被提供至腔室100,以清潔腔室100元件。清潔氣體可藉由提供至噴頭106的RF來源128而更被激發。
噴頭106可額外地藉由噴頭懸架(suspension)134耦接至背板112。在一實施例中,噴頭懸架134係一彈性金屬襯套(skirt)。噴頭懸架134可具有唇緣(lip)136,噴頭106可安設在其上。背板112可安置在與腔室側壁102耦接之突架(ledge)114的上表面,以密封腔室100。
第2圖繪示依照本發明各種實施例之形成OLED裝置之方法200的流程圖。第3A-3D圖繪示在第2圖之方法200的不同階段期間,OLED裝置的剖面示意圖。此方法200起始於製程202,提供一基板300,該基板300具有一預先形成(preformed)之OLED結構304設置於其上。基板300可具有接觸層302設置於其上,而OLED結構304設置在接觸層302上,如第3A圖所示。
在製程204,遮罩309係置於在基板300上並對準(align),以使OLED結構304經由未被遮罩309保護之開口307暴露出來,如第3A圖所示。遮罩309係被定位,以使靠近OLED結構304之接觸層302的一部位305被遮罩309所覆蓋,以使任何後續沉積的材料不會沉積在此部位305上。接觸層302的此部位305係作為OLED裝置的電性接墊(contact),因此不應有材料沉積於其上。遮罩309可由金屬材料(,如INVAR®)所製成。
在製程206,第一障壁層308係沉積在基板100上,如第3A圖所示。第一障壁層308具有第一部位308a與第二部位308b。第一障壁層308的第一部位308a係經由開口307而沉積在基板300的一個由遮罩309所暴露之包含OLED結構304與一部分的接觸層302的區域上。第一障壁層308的第二部位308b係沉積在覆蓋基板300之包含接觸層302的部位305之一第二區域的遮罩309上。第一障壁層308係介電層,例如氮化矽(SiN)、氮氧化矽(SiON)、二氧化矽(SiO2)、氧化鋁(Al2O3)、氮化鋁(AlN)、或其他合適的介電層。第一障壁層308可藉由合適的沉積技術,如化學氣相沉積(chemical vapor deposition,CVD)、PECVD、物理氣相沉積(physical vapor deposition,PVD)、旋塗(spin-coating)、或其它合適的技術來沉積。
在製程208,在第一障壁層308被沉積在基板300上之後,緩衝層312接著被沉積在基板300上的第一障壁層308上,如第3B圖所示。緩衝層312的第一部位312a可經由遮罩309的開口307(位在由遮罩309所暴露之基板300的區域上)而被沉積在基板300上,並覆蓋第一障壁層308的第一部位308a。緩衝層312的第二部位312b係沉積在設置在遮罩309上之第一障壁層308的第二部位308b,遮罩309覆蓋了接觸層302的此部位305。
緩衝層312可以是丙烯酸酯(acrylate)、甲基丙烯酸酯(methacrylate)、丙烯酸(acrylic acid)、或類似物。在一實施例
中,緩衝層312係電漿聚合六甲基二矽氧烷(plasma-polymerized hexamethyldisiloxane,pp-HMDSO)。pp-HMDSO材料層的沉積可藉由流動一含氧氣體與HMDSO氣體而達成。在一例子中,含氧氣體係氧化亞氮(N2O)。在處理以沉積pp-HMDSO層的期間,低的N2O/HMDSO流動比率(例如:低於2)可被維持,pp-HMDSO層具有的特性包含釋壓、粒子一致性(particle conformality)、與彈性。pp-HMDSO層的這些特點有助於作為緩衝層來減少(decouple)在第一障壁層308的缺陷,並平坦化表面的不平整而形成一個光滑的表面。然而,低N2O/HMDSO比率形成的pp-HMDSO往往在物理上是軟的,這在堆疊障壁層時導致了整合的問題。當障壁層堆疊在軟的pp-HMDSO層的上方時,皺摺表面會形成,且軟的pp-HMDSO層失去了光透過性,這將不適合作為頂部發光OLED裝置。
為了硬化(harden)緩衝層312,緩衝層312的電漿固化係被使用。在製程210,緩衝層312係被固化以形成一固化之緩衝層313,如第3C圖所示。固化可藉由含氟電漿而被執行,含氟電漿例如是氟化氮(NF3)、氟化矽(SiF4)要氟氣(F2)和/或四氟化碳(CF4)。緩衝層312的含氟電漿固化可在低於攝氏100度的溫度執行,使得緩衝層在不令氧氣擴散至OLED裝置的情況下被固化。在一實施例中,NF3氣體係流入腔室,NF3氣體具有1100每分鐘標準毫升(standard cubic centimeter per minute,sccm)的流動
速率,而電漿係在1200瓦特下被產生。腔室壓力低於500mTorr,而基板300與噴頭106的距離係約1m。電漿固化係在約攝氏80度下被執行,固化期間約2分鐘。當一個或多個障壁層係在之後沉積於固化之緩衝層313上時,固化之緩衝層313可維持彈性及光學穿透性(optical transmittance)。
固化的持續期間可與緩衝層312的厚度相關。一般而言,對於緩衝層312的每個微米,一分鐘的固化係被執行。在一實施例中,緩衝層312係約2微米厚,而固化時間係約2分鐘。
在製程212,第二障壁層314係沉積在基板100上,覆蓋形成在OLED結構上之固化的緩衝層313及第一障壁層308,如第3D圖所示。第二障壁層314包含沉積在固化之緩衝層313之第一部位313a上的第一部位314a、及沉積在固化之緩衝層313之第二部位313b上的第二部位314b。
第二障壁層314可以是一相似於第一障壁層308的介電層。第二障壁層314係一介電層,例如是例如SiN、SiO2、或其他合適的介電層。第二障壁層314可藉由合適的沉積技術,如CVD、PVD、旋塗、或其它合適的技術來沉積。
障壁層與緩衝層的沉積、及於此所述之緩衝層的固化,可在單一處理腔室中進行,例如是PECVD腔室100。製程腔室的清理(purging)可在周期(cycle)之間被執行,以減少污染的風
險。在一實施例中,第一障壁層被沉積。腔室接著被清理,使得用於沉積第一障壁層的氣體不會存留於腔室中,以利於後續的處理。接著,緩衝層被沉積。腔室接著再次被清理,使得用於沉積緩衝層的氣體不會存留於腔室中,以利後續的處理。接著,緩衝層被固化,隨後係另一次腔室的清理。最後,第二障壁層被沉積。單一腔室處理可有助於減少周期時間(cycle time),並減少使用多腔室處理之腔室的數量(與裝備成本)。
總言之,OLED裝置係伴隨著夾置在二個障壁層之間的緩衝層而被形成。緩衝層係在障壁層沉積在緩衝層上之前,藉由含氟電漿在低於攝氏100度的溫度下被固化。
綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。
Claims (20)
- 一種形成有機發光二極體(organic light emitting diode,OLED)裝置之方法,包括:沉積一第一障壁層於一基板的一區域上,該基板具有一OLED結構設置在其上;沉積一緩衝層於該第一障壁層上;以一含氟(fluorine-containing)電漿在低於約攝氏100度的溫度下固化(cure)該緩衝層;以及沉積一第二障壁層於固化之該緩衝層上。
- 如申請專利範圍第1項所述之方法,其中該緩衝層包含電漿聚合六甲基二矽氧烷(plasma-polymerized hexamethyldisiloxane,pp-HMDSO)。
- 如申請專利範圍第2項所述之方法,其中固化時間係有關於該緩衝層的厚度,其中每微米之該緩衝層的厚度需1分鐘之固化時間。
- 如申請專利範圍第1項所述之方法,其中該含氟電漿包含NF3、SiF4、F2、CF4或其任何組合。
- 如申請專利範圍第1項所述之方法,其中沉積該第一及該第二障壁層及該緩衝層與緩衝層的固化係在一單一製程腔室中進行。
- 如申請專利範圍第5項所述之方法,其中該單一製程腔室係一PECVD腔室。
- 一種形成OLED裝置之方法,包括:沉積一第一障壁層於一基板的一區域上,該基板具有一OLED結構設置在其上;沉積一緩衝層於該第一障壁層上;以一含氟電漿固化該緩衝層約2分鐘;以及沉積一第二障壁層於固化之該緩衝層上。
- 如申請專利範圍第7項所述之方法,其中該緩衝層包含電漿聚合六甲基二矽氧烷。
- 如申請專利範圍第8項所述之方法,其中以一含氟電漿固化該緩衝層係在低於約攝氏100度的溫度。
- 如申請專利範圍第7項所述之方法,其中該含氟電漿包含NF3、SiF4、F2、CF4或其任何組合。
- 如申請專利範圍第7項所述之方法,其中沉積該第一及該第二障壁層及該緩衝層與緩衝層的固化係在一單一製程腔室中進行。
- 如申請專利範圍第11項所述之方法,其中該單一製程腔室係一PECVD腔室。
- 一種形成OLED裝置之方法,包括:形成一接觸層於一基板上;形成一OLED結構於該接觸層上;沉積一第一障壁層於該OLED結構上;沉積一緩衝層於該第一障壁層上; 以一含氟電漿在低於約攝氏100度的溫度下固化該緩衝層;以及沉積一第二障壁層於固化之該緩衝層上。
- 如申請專利範圍第13項所述之方法,其中該緩衝層包含電漿聚合六甲基二矽氧烷。
- 如申請專利範圍第14項所述之方法,其中固化時間係有關於該緩衝層的厚度,其中每微米之該緩衝層的厚度需1分鐘之固化時間。
- 如申請專利範圍第13項所述之方法,其中該含氟電漿包含NF3、SiF4、F2、CF4或其任何組合。
- 如申請專利範圍第13項所述之方法,其中沉積該第一及該第二障壁層及該緩衝層與緩衝層的固化係在一單一處理腔室中進行。
- 如申請專利範圍第17項所述之方法,其中該單一處理腔室係一PECVD腔室。
- 如申請專利範圍第13項所述之方法,其中該第一障壁層包含SiN、SiON、SiO2、Al2O3、或AlN。
- 如申請專利範圍第19項所述之方法,其中該第二障壁層包含SiN、SiON或SiO2。
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WO2012109038A2 (en) * | 2011-02-08 | 2012-08-16 | Applied Materials, Inc. | Method for hybrid encapsulation of an organic light emitting diode |
Also Published As
Publication number | Publication date |
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CN105009320B (zh) | 2017-10-17 |
US9431631B2 (en) | 2016-08-30 |
KR20170106522A (ko) | 2017-09-20 |
US9530990B2 (en) | 2016-12-27 |
US20140256070A1 (en) | 2014-09-11 |
KR101780019B1 (ko) | 2017-09-19 |
CN105009320A (zh) | 2015-10-28 |
TW201444140A (zh) | 2014-11-16 |
US20160351861A1 (en) | 2016-12-01 |
KR20150127669A (ko) | 2015-11-17 |
KR102024921B1 (ko) | 2019-09-24 |
CN107482137A (zh) | 2017-12-15 |
CN107482137B (zh) | 2019-06-07 |
WO2014163773A1 (en) | 2014-10-09 |
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