TWI628694B - Exhaust device, semiconductor manufacturing system and semiconductor manufacturing method - Google Patents

Abstract

An exhaust device includes a first line and a main line. The first line includes a first body portion, a first connecting portion, and a first valve device. The first body portion extends in the first direction. The first connecting portion connects the first body portion, and the first connecting portion includes an air inlet. The first valve device is coupled to the first body portion, and the first valve device includes: a first air hole, a first sliding cover, and a first fixing device. The position of the first sliding cover determines the opening size of the first air hole, and the relationship between the opening size of the first air hole and the exhaust amount of the first line is negatively correlated. The main line includes an exhaust port and a first portion extending in a first direction, wherein the first portion is coupled to the first line.

Description

Exhaust device, semiconductor manufacturing system and semiconductor manufacturing method

Embodiments of the present invention relate to an exhaust system, and more particularly to an exhaust apparatus, a semiconductor manufacturing system having the exhaust apparatus, and a semiconductor manufacturing method using the exhaust apparatus.

The exhaust device controls the amount of exhaust through the valve device. In general, a conventional valve device (such as a butterfly valve) blocks a gas flow cross-sectional area of an exhaust line through a valve, thereby controlling the amount of exhaust of the exhaust line. However, as the operating time builds up, the valve of the conventional valve device described above will accumulate dust or deposits in the gas, thereby causing additional clogging of the exhaust line, resulting in an additional amount of exhaust gas.

Accordingly, there is a need for an exhaust device, a semiconductor manufacturing system, and a semiconductor manufacturing method that can reduce the accumulation of dust or deposits in a gas.

Some embodiments of the present invention provide an exhaust device that includes a first line and a main line. The first line includes a first body portion, at least one first connection portion, and a first valve device. The first body portion extends in the first direction. The at least one first connecting portion is connected to the first body portion, and the at least one first connecting portion includes an air inlet. The first valve device is coupled to the first body portion, and the first valve device includes: a first air hole, a first sliding cover, and a first fixing device. The first fixture is configured to The first slider is fixed to at least a first position. Wherein the at least one first position determines the opening size of the first air hole, and the relationship between the opening size of the first air hole and the exhaust volume of the first line is negatively correlated. The main line includes an exhaust port and a first portion extending in a first direction, wherein the first portion is coupled to the first line.

Some embodiments of the present invention provide a semiconductor manufacturing system including: a first chamber, a first gas passage, a first pipeline, a main pipeline, and an air pump. The first chamber is configured to perform a semiconductor process on a wafer. The first gas passage is connected to at least the exhaust port of the first chamber. The first line includes a first body portion, a first connecting portion, and a first valve device. The first body portion extends along the first direction. The first connecting portion connects the first body portion and connects the first gas passage. The first valve device is coupled to the first body portion, and the first valve device includes: a first air hole, a first sliding cover, and a first fixing device. The first fixture is configured to secure the first slider to the at least one first position. Wherein the at least one first position determines the opening size of the first air hole, and the relationship between the opening size of the first air hole and the exhaust volume of the first line is negatively correlated. The main line includes a first portion extending in a first direction and the first portion is coupled to the first line. The air pump is coupled to one of the exhaust ports of the main line.

Some embodiments of the present invention provide a semiconductor manufacturing method including: performing a semiconductor process on a wafer through a chamber; and transmitting a gas in the chamber through a first pipeline through a pump in a semiconductor process The inlet port of the at least one connecting portion is introduced into a main body portion of the first line, and the gas in the first line is discharged into a first portion of a main line; in the semiconductor manufacturing process, the first valve device of the first line is adjusted One of the positions of the slider controls the opening size of the air hole of one of the first valve devices, thereby adjusting the displacement of the first line. Therein, the relationship between the opening size of the pores and the displacement of the first line is negatively correlated.

E1, E4, E6‧‧‧ exhaust

T1, T41, T61, T62, T71‧‧‧ pipelines

T2, T42, T63, T72‧‧‧ total pipeline

M1, M41, M61, M62, M71‧‧‧ Main body

C1, C41, C42, C61-C64, C71‧‧‧ Connections

V1, V4, V5, V5B, V61-V63, V71‧‧‧ valve devices

O1, O41, O42, O61-O64, O71‧‧‧ air inlet

TP1, TP4, TP6, TP7‧‧‧ first part

O2, O43, O65, H7, H8B‧‧ vents

D1, d4, d6, d7‧‧ direction

B1, B5‧‧‧ base

H1, H5, H5B‧‧‧ stomata

S1, S5, S5B‧‧ ‧ slide

F1, F2, F51, F52, F5B‧‧‧ fixtures

TR1, TR2, TR51, TR52‧‧‧ guiding slots

PM, PM7, PM8‧‧‧ pump

A1-A3, A7‧‧‧ air flow

HA‧‧‧ openings

CM1, CTP, CM61, CM62, CTP6‧‧‧ cross-sectional area

S7, S8‧‧‧ semiconductor manufacturing system

CH, CH81-CH85‧‧‧ chamber

P7, P81-P84‧‧‧ gas passage

PR‧‧‧Photoresist coating device

HP‧‧ hot plate

TD‧‧‧ conveyor

901-903‧‧‧Steps

1A is a schematic view of an exhaust device according to an embodiment of the present invention; FIG. 1B is a schematic view of a valve device according to an embodiment of the present invention; FIG. 1C is a schematic view of a valve device according to an embodiment of the present invention; A schematic diagram of an exhaust system according to an embodiment of the present invention; FIG. 3 is a schematic diagram showing a relationship between a cross-sectional area of a pipeline and a main pipeline viewed in a direction according to an embodiment of the present invention; and FIG. 4A is a row according to an embodiment of the present invention. 4B is a schematic view of an air inlet according to an embodiment of the present invention; FIG. 5A is a schematic view of a valve device according to an embodiment of the present invention; and FIG. 5B is a schematic view of a valve device according to an embodiment of the present invention; 6A is a schematic view of an exhaust device according to an embodiment of the present invention; FIG. 6B is a schematic view showing a relationship between a cross-sectional area of a pipeline and a main pipeline viewed in a direction according to an embodiment of the present invention; A schematic diagram of a semiconductor fabrication system of an embodiment of the invention; FIG. 8A is a schematic diagram of a semiconductor fabrication system in accordance with an embodiment of the present invention; and FIG. 8B is a schematic diagram of a chamber in accordance with an embodiment of the present invention; Figure 9 is a flow chart of a method of fabricating a semiconductor in accordance with an embodiment of the present invention.

The following disclosure provides many different embodiments or examples to implement various features of the present invention. The following disclosure sets forth specific examples of various components and their arrangement to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if an embodiment describes a first feature formed in a second feature Up or above, that is, it may include a case where the first feature is directly in contact with the second feature, and may also include an additional feature formed between the first feature and the second feature, so that the first The case where the feature is not in direct contact with the second feature.

Spatially related terms used in the following, such as "below", "below", "lower", "above", "higher" and the like, are used to facilitate the description of one element in the illustration. Or the relationship between a feature and another component or feature(s). In addition to the orientation depicted in the drawings, these spatially relative terms are also meant to refer to devices that may be used in different orientations or in operation.

The same component numbers and/or characters may be repeated in the following various embodiments, which are for the purpose of simplicity and clarity, and are not intended to limit the specific relationship between the various embodiments and/or structures discussed.

The vocabulary of the first and second terms used hereinafter is for illustrative purposes only and is not intended to limit or limit the scope of the patent. In addition, the first feature and the second feature are not limited to the same or different features.

In the drawings, the shape or thickness of the structure may be enlarged to simplify or facilitate the marking. It is to be understood that elements not specifically described or illustrated may be in various forms well known to those skilled in the art.

Fig. 1A is a schematic view of an exhaust device E1 according to an embodiment of the present invention. The exhaust unit E1 includes a line T1 and a total line T2. The line T1 includes a main body portion M1, a connecting portion C1, and a valve device V1, wherein the connecting portion C1 includes an air inlet O1. The main line T2 includes a first portion TP1 and an exhaust port O2, wherein the first portion TP1 is connected to the line T1. The main body portion M1 and the first portion TP1 extend in the direction d1.

In some embodiments, the connection C1 is along a different direction than the direction d1 The other direction extends. For example, the connecting portion C1 extends in the vertical direction of the direction d1. In some embodiments, the exhaust port O2 is coupled to an air pump through another line (not shown in FIG. 1A). In some embodiments, the exhaust port O2 is coupled to an air pump (not shown in FIG. 1A) through another line, and the other line includes a butterfly valve. The above butterfly valve is used to control the displacement of the other line.

In some embodiments, valve device V1 is as shown in FIG. 1B. The valve device V1 of Fig. 1B includes a base B1, a blow hole H1, a slide cover S1, a fixing device F1, and a fixing device F2. The fixing devices F1, F2 each include a fixing post such that the sliding cover S1 is movable along the guiding grooves TR1, TR2 of the sliding cover S1 itself. The fixing devices F1, F2 also each include a fixing member disposed on the fixing post, and provide a frictional force between the sliding cover S1 and the fixing member, so that the sliding cover S1 is moved to a certain position along the guiding grooves TR1, TR2. Thereafter, it can be left in the above position, thereby controlling the opening size of the air hole H1. For example, the fixing post may have a thread, and the fixing member may include a nut that matches the fixing post and the thread, and the embodiment of the invention is not limited thereto. In this embodiment, the air holes H1 allow gas to flow between the base B1 and the main body portion M1.

In some embodiments, the slider S1 and the air hole H1 may be of any shape, and the air gap H1 may be completely obscured when the slider S1 is moved to a specific position. In some embodiments, the guiding grooves TR1, TR2 and the fixing means F1, F2 are arranged to move the sliding cover S1 in any direction, and the sliding cover S1 can be completely shielded from the air hole H1 when moved to a specific position. In some embodiments, the placement of the guide slots TR1, TR2 and the fixtures F1, F2 causes the slider S1 to move in the direction d1.

As shown in Fig. 1C, when the slider S1 moves along the guide grooves TR1, TR2, the opening size of the air hole H1 is changed. When the sliding cover S1 is placed in the 1C picture At the position of the portion, the partial air hole H1 is shielded by the sliding cover S1 such that the air hole H1 exposes only the portion of the opening HA. In some embodiments, the operation of the exhaust and valve devices of Figures 1A-1C is as shown in Figure 2.

Figure 2 is a schematic illustration of an exhaust system in accordance with an embodiment of the present invention. In this embodiment, the exhaust system uses the exhaust device E1 of FIG. 1A and the valve device V1 of FIG. 1B, and the total line T2 of the exhaust device E1 is coupled to the air pump PM. When the air pump PM starts and extracts the air flow rate A3, the air inlet O1 of the exhaust device E1 will take in the air flow rate A1 (that is, the exhaust volume of the line T1), and the air hole H1 of the valve device V1 will take in the air flow rate A2. In this case, the air flow rate A3 is substantially equal to the sum of the air flow rate A1 and the air flow rate A2. When the slider S1 does not completely obscure the air hole H1, the size of the opening HA of the air hole H1 will be positively correlated with the air flow rate A2, that is, when the opening HA becomes large, the air flow rate A2 will increase. In other words, when the opening HA becomes large and the air flow rate A2 increases, in the case where the air flow rate A3 does not change, the air flow rate A1 is decreased to lower the exhaust gas amount of the line T1, and thus the size of the opening HA of the air hole H1. It is inversely related to the displacement of the line T1 (i.e., the air flow rate A1). In some embodiments, when the slider S1 is moved and completely obscures the air hole H1, the air flow rate A2 is zero and the air flow rate A1 will be equal to the air flow rate A3 (this is a condition in which the components of the exhaust device E1 are not leaking) . In some embodiments, the unit of the above-described amount of exhaust may be pascal (Pa).

Based on the above operational mechanism, the amount of exhaust of the line T1 can be controlled by the size of the opening HA of the valve device V1. Different from the traditional valve device (such as butterfly valve) using a valve to block the gas in the exhaust line, the valve device V1 uses the introduced air flow (such as the air flow A2) to adjust the air flow in the pipeline T1, the main body M1 No valves are installed inside, so dust in the gas can be avoided or reduced Or the phenomenon that the deposit accumulates in the valve in the exhaust line, thereby reducing the blocking phenomenon of the valve device V1 and prolonging the operable time of the exhaust device E1. For example, in a semiconductor process, a portion of the photoresist is heated to sublime into a gas and is discharged by the exhaust device. The above-mentioned sublimated photoresist may be deposited on the valve of the above conventional valve device, thereby causing additional blockage to the pipeline of the above-mentioned exhaust device, and the valve device V1 of the present embodiment adjusts the gas in the pipeline T1 by introducing a gas flow. The flow rate can thus avoid or reduce the phenomenon that dust or deposits in the gas accumulate in the valve in the exhaust line, thereby reducing the blockage of the valve device V1.

In some embodiments, when viewed in a direction d1, the entire cross-sectional area CM1 of the main body portion M1 is overlapped with the cross-sectional area CTP1 of the first portion TP1 of the total line T2, as shown in FIG. In the embodiment shown in Fig. 3, the normal vector of the cross-sectional area CM1 and the cross-sectional area CTP1 are parallel to the direction d1. In this case, the flow path of the gas flowing from the main body portion M1 to the first portion TP1 of the main line T2 may be a straight line. Since the exhaust device E1 discharges the gas from the main body portion M1 to the first portion TP1 of the main line T2, the air flow path can be a straight line, and the exhaust device E1 can reduce the phenomenon that dust or deposits in the gas accumulate at the bend of the air flow path. In turn, the clogging phenomenon of the exhaust device E1 is reduced, and the operable time of the exhaust device E1 can also be extended.

In some embodiments, the area of the cross-sectional area CM1 may be equal to the area of the cross-sectional area CTP1, and the cross-sectional area CM1 and the cross-sectional area CTP1 completely overlap in the direction d1. In some embodiments, the line T1 may not have the connection portion C1, and the air inlet O1 may be directly disposed at the main body portion M1. In some embodiments, the pipeline T1 can include a plurality of connections.

Figure 4A is a schematic illustration of an exhaust device E4 in accordance with an embodiment of the present invention. Figure. The exhaust unit E4 includes a line T41 and a total line T42. The line T41 includes a main body portion M41, a connecting portion C41, a connecting portion C42, and a valve device V4. The connecting portion C41 includes an intake port O41, and the connecting portion C42 includes an intake port O42. The main line T42 includes a first portion TP4 and an exhaust port O43, wherein the first portion TP4 is connected to the line T41. The main body portion M41 and the first portion TP4 extend in the direction d4. In this embodiment, the valve device V4 can be constructed the same as the valve device V1 of Fig. 1B. In some embodiments, the connections C41 and C42 extend in another direction than the direction d1. For example, the connecting portions C41 and C42 extend in the vertical direction of the direction d1.

In this embodiment, the intake port O41 is the same size as the intake port O42 as shown in Fig. 4B. Since the intake port O41 of the present embodiment has the same size as the intake port O42, the exhaust device E4 can reduce the uneven accumulation of dust or deposits generated by the difference in the sizes of the intake port O41 and the intake port O42. In other words, the venting device E4 can perform more frequent cleaning operations without having to accommodate a more easily blocked air inlet (e.g., a smaller opening). Since the air inlet O41 and the air inlet O42 of the embodiment are the same in size, the exhaust device E4 can efficiently clean the obstruction of each air inlet at the same time in each cleaning operation, and reduce the exhaust device. The number and cost of cleaning actions for E4. In some embodiments, the intake port O41 and the intake port O42 may have the same arbitrary shape, and the intake port O41 is the same size as the intake port O42.

In some embodiments, the valve device described above can have other configurations. For example, a schematic view of valve device V5 as shown in Figure 5A. Taking the line T1 of Fig. 1A as an example, the valve device V5 can replace the valve device V1. The valve device V5 includes a vent H5, a slide S5, a fixing device F51, and a fixing device F52. The air hole H5 is directly provided to the main body portion M1. The fixing devices F51 and F52 each include a fixing post and The fixing post is directly disposed on the main body portion M1 such that the sliding cover S5 can move along the guiding grooves TR51, TR52 of the sliding cover S5 itself. Each of the fixing devices F51 and F52 further includes a fixing member disposed on the fixing post, and provides a frictional force between the sliding cover S5 and the fixing member, so that the sliding cover S5 is moved to a certain position along the guiding grooves TR51 and TR52. Thereafter, it can be left in the above position, thereby controlling the opening size of the air hole H5.

In this embodiment, the sliding cover S5 is designed to match the outer shape of the main body portion M1. For example, when the main body portion M1 is a cylinder, the shape of the sliding cover S5 is a curved surface matching the outer surface of the main body portion M1, and the present invention is implemented. The example is not limited to this. In this embodiment, the difference between the valve device V5 and the valve device V1 is that the valve device V5 does not need to be connected to the main body portion M1 through the base, and the air hole H5, the fixing device F51, F52 and the sliding cover S5 of the valve device V5 can be directly disposed on the main body. Department M1. In some embodiments, the slider S5 and the air hole H5 may be of any shape, and the air gap H5 may be completely obscured when the slider S5 is moved to a specific position. In some embodiments, the guiding grooves TR51, TR52 and the fixing means F51, F52 are arranged to move the sliding cover S5 in any direction, and the sliding cover S5 can be completely shielded from the air hole H5 when moved to a specific position.

Figure 5B is a schematic illustration of a valve device V5B in accordance with another embodiment of the present invention. Taking the line T1 of Fig. 1A as an example, the valve device V5B can replace the valve device V1. The valve device V5B includes a base B5, a blow hole H5B, a slide cover S5B, and a fixing device F5B. The fixing device F5B includes a fixing post such that the sliding cover S5B can be moved in a clockwise direction or a counterclockwise direction by using the above-mentioned fixing column as a fulcrum. The fixing device F5B also includes a fixing member disposed on the fixing post, and provides a frictional force between the sliding cover S5B and the fixing member, so that the sliding cover S5B is moved to a certain position in a clockwise or counterclockwise direction and can be allowed to stand. In the above position, thereby controlling the air hole H5B The size of the opening. In this embodiment, the air holes H5B allow gas to flow between the base B5 and the main body portion M1. In this embodiment, the valve device V5B can control the position of the slider S5B without the need for a guide groove. In some embodiments, the slider S5B and the air hole H5B may be of any shape, and the air gap H5B may be completely obscured when the slider S5B is moved to a specific position.

In some embodiments, the valve device of the embodiments of the present invention can be any valve device including a slider of any shape, a vent, and a fixture that can secure the slider to at least one location. The valve device can control the opening size of the air hole through the sliding cover.

Figure 6A is a schematic illustration of an exhaust device E6 in accordance with an embodiment of the present invention. The exhaust unit E6 includes a line T61, a line T62, and a total line T63. The line T61 includes a main body portion M61, a connecting portion C61, a connecting portion C62, and a valve device V61. The line T62 includes a main body portion M62, a connecting portion C63, a connecting portion C64, and a valve device V62. The connecting portions C61 to C64 include intake ports O61 to O64, respectively. The main line T63 includes a first portion TP6, a valve device V63, and an exhaust port O65, wherein the first portion TP6 connects the line T61 with the line T62. The main body portion M61, the main body portion M62, and the first portion TP6 extend in the direction d6. In some embodiments, the valve devices V61-V63 can be any of the valve devices described above. In some embodiments, the valve device V63 can be coupled to a portion other than the first portion TP6 of the main line T63. In some embodiments, the inlets O61, O62 are the same size and the inlets O63, O64 are the same size.

In some embodiments, when the exhaust port O65 of the main line T63 is coupled to an air pump (not shown in FIG. 6A), the total amount of gas sucked by the air pump through the air inlets O61 to O64 is transparent. The valve device V63 is adjusted. In addition, the total amount of gas inhaled by the inlets O61 and O62 can be transmitted through the valve unit V61. One step adjustment; the total amount of gas taken in by the inlets O63, O64 can be further adjusted by the valve device V62.

For example, when the pump starts and draws the first air flow, the intake ports O61, O62 will draw in the second air flow (ie, the exhaust volume of the line T61); the intake ports O63, O64 will draw the third gas. Flow rate (ie, the amount of exhaust of line T62). As described above, when the air holes of the valve devices V61 to V63 are completely shielded, the sum of the second air flow rate and the first air flow rate is equal to the first air flow rate; when the opening of the air hole of the valve device V61 becomes large, The second air flow rate is reduced; when the opening of the air hole of the valve device V62 becomes large, the third air flow rate is reduced; when the opening of the air hole of the valve device V63 becomes large, the second air flow rate and the third gas are The traffic will be reduced. In other words, the relationship between the opening size of the air hole of the valve device V61 and the displacement amount of the line T61 (i.e., the second air flow rate) is negatively correlated; the opening size of the air hole of the valve device V62 and the displacement amount of the line T62 The relationship between the third gas flow rate is negatively correlated; the opening size of the pores of the valve device V63 is between the displacement of the line T61 and the line T62 (ie, the second gas flow rate and the third gas flow rate). The relationship is negatively correlated.

In some embodiments, when viewed in a direction d6, the entire cross-sectional area CM61 of the main body portion M61 is overlapped with the cross-sectional area CTP6 of the first portion TP6 of the main line T63, and the overall cross-sectional area CM62 of the main body portion M62 is overlapped. The cross-sectional area CTP6 is as shown in Fig. 6B. In the embodiment shown in FIG. 6B, the normal vectors of the cross-sectional area CM61, the cross-sectional area CM62, and the cross-sectional area CTP6 are all parallel to the direction d6. In this case, the flow path of the gas flowing from the main body portion M61 to the first portion TP6 of the main line T63 may be a straight line, and the flow path of the gas flowing from the main body portion M62 to the first portion TP6 may be a straight line. Since the exhaust device E6 will gas The air flow path discharged from the main body portions M61 and M62 to the first portion TP6 may be a straight line, and the exhaust device E6 can reduce the phenomenon that dust or deposits in the gas accumulate at the bend of the air flow path, thereby reducing the exhaust device E6. Blockage and extend the operating time of the exhaust unit E6.

In some embodiments, the pipeline T61 can include a plurality of connections, and the pipeline T62 can also include a plurality of connections. In some embodiments, the pipeline T61 may not have the connecting portions C61, C62, and the air inlets O61, O62 may be directly disposed in the main body portion M61; and the pipeline T62 may not have the connecting portions C63, C64, and the air inlets O63, O64 may It is directly disposed in the main body portion M62.

Figure 7 is a schematic illustration of a semiconductor fabrication system S7 in accordance with an embodiment of the present invention. The semiconductor manufacturing system S7 includes a chamber CH, an exhaust device, an exhaust port H7 connecting the chamber CH, a gas passage P7 of the above-described exhaust device, and an air pump PM7. The above exhaust device includes a line T71 and a total line T72. The line T71 includes a main body portion M71, a connecting portion C71, and a valve device V71. The connecting portion C71 includes an intake port O71, and the intake port O71 is connected to the gas passage P7. The main line T72 includes a first portion TP7 and an exhaust port (not shown in FIG. 7), wherein the first portion TP7 is connected to the line T1, and the exhaust port is coupled to the air pump PM7. The main body portion M71 and the first portion TP7 extend in the direction d7. In some embodiments, valve device V7 can be any of the valve devices described above. In some embodiments, the exhaust, the gas passage P7, and the pump PM7 in the semiconductor manufacturing system S7 can be considered an exhaust system. In some embodiments, the semiconductor fabrication system S7 can include a semiconductor machine (not shown) in which the chamber CH is disposed.

In some embodiments, the chamber CH is configured to perform a semiconductor process on a wafer, such as oxidation, chemical vapor deposition, photoresist coating, soft bake And the embodiments of the present invention are not limited thereto. When the chamber CH is disposed to perform a semiconductor process on the wafer, the air pump PM7 can extract the gas in the chamber CH through the exhaust device and the gas passage P7. According to the valve device of the above embodiment, the valve device V7 adjusts the air flow rate A7 in the line T71 by introducing the air flow, thereby avoiding or reducing the accumulation of dust or deposits in the gas in the conventional valve device (for example, a butterfly valve). The phenomenon of the valve, in turn, reduces the clogging of the valve device V7 and at the same time extends the operational time of the semiconductor manufacturing system S7.

Figure 8A is a schematic illustration of a semiconductor fabrication system S8 in accordance with an embodiment of the present invention. The semiconductor manufacturing system S8 includes chambers CH81 to CH85, an exhaust device, gas passages P81 to P84 connecting the chambers CH81 to CH85 and the exhaust unit, and an air pump PM8. The above exhaust device includes a line T61, a line T62, and a total line T63. For the correspondence between the components of the exhaust device, refer to the content of the exhaust device E6 in the foregoing FIG. 6A, and details are not described herein again. The air inlets of the connecting portions C61 to C64 (for example, the air inlets O61 to O64 of FIG. 6A) are respectively connected to the gas passages P81 to P84. The exhaust port of the total line T63 (for example, the exhaust port O65 of FIG. 6A) is coupled to the air pump PM8.

In some embodiments, the gas passages P81-P84 can be coupled to at least one chamber, respectively. In some embodiments, at least one of the chambers CH81-CH85 can be configured to perform a semiconductor process on a wafer. For example, in some embodiments, chamber CH81 can include an exhaust port H8B, a photoresist coating device PR, a hot plate HP, a conveyor TD, as shown in FIG. 8B. The exhaust port H8B is connected to the gas passage P81. The photoresist coating device PR can apply a photoresist to the above wafer. The transfer device TD can transfer the wafer between the photoresist coating device PR and the hot plate HP. The hot plate HP can heat the above wafer to which the above photoresist is applied. In some real In the embodiment, the photoresist coating device PR may include a nozzle, a rotating stage, a coating groove, and the like, and the embodiment of the invention is not limited thereto. In some embodiments, the hot plate HP may include heating means and heating channels, etc., and embodiments of the invention are not limited thereto. In some embodiments, the conveyor TD can include a conveyor belt or robotic arm, etc., and embodiments of the invention are not limited thereto.

In some embodiments, when the chamber CH81 performs a semiconductor process on the wafer (for example, when the photoresist is applied to the wafer), the air pump PM8 can pass through the gas passage P81, the pipeline T61, and the total pipeline T63. The gas in the chamber CH81 (for example, a gas containing a photoresist sublimate) is discharged. According to the valve device described in the foregoing embodiments, the valve devices V61 to V63 adjust the air flow in the pipeline T61 by introducing a gas flow, thereby avoiding or reducing dust or deposits in the gas (for example, a sublimated photoresist) The resulting deposits accumulate in the valve of a conventional valve device (such as a butterfly valve), thereby reducing the clogging of the valve devices V61 to V63 and prolonging the operational time of the semiconductor manufacturing system S8.

In some embodiments, the inlets C61 and C62 of FIG. 8A have the same inlet size, and the inlets C63 and C64 have the same inlet size. When the chambers CH81 and CH82 are simultaneously subjected to the same or different semiconductor processes for different wafers, since the inlets of the connecting portions C61 and C62 of FIG. 8A have the same size, the pipeline T61 of FIG. 8A can be lowered. The uneven accumulation of dust or deposits caused by the difference in the size of the inlets of the parts C61 and C62 makes the semiconductor manufacturing system S8 not have to accommodate the air inlet which is relatively easy to block (for example, the opening with a small opening) The cleaning operation is performed more frequently, and the obstructions of the air inlets of the connecting portions C61 and C62 are efficiently cleaned, and the number and cost of the cleaning operation of the semiconductor manufacturing system S8 are reduced.

In some embodiments, the flow path of the gas flowing from the main body portion M61 to the first portion TP6 of the main line T63 may be a straight line, and the air flow path of the gas flowing from the main body portion M62 to the first portion TP6 may also be a straight line. In this case, the phenomenon that dust or deposits in the gas (for example, deposits caused by the sublimated photoresist) accumulate at the bend of the air flow path can be reduced, thereby prolonging the operational time of the semiconductor manufacturing system S8.

Figure 9 is a flow chart of a method of fabricating a semiconductor in accordance with an embodiment of the present invention. In step 901, a semiconductor process is performed on a wafer through a chamber. In step 902, in the semiconductor manufacturing process, the gas in the chamber is introduced into a main body of the first pipeline through an air inlet of at least one connecting portion of a first pipeline through an air pump, and the The gas in the first line is discharged into a first portion of a main line. In step 903, in the semiconductor manufacturing process, adjusting a position of one of the first valve devices of the first pipeline to control an opening size of one of the first valve devices, thereby adjusting the row of the first pipeline Gas volume.

In some embodiments, the body portion and the first portion extend along a first direction. In some embodiments, the size of the opening of the air vent is inversely related to the amount of exhaust of the first line.

In some implementations, the semiconductor manufacturing method shown in FIG. 9 further includes the steps of: applying a photoresist to the wafer through a photoresist coating device of the chamber; and applying the coating through a transfer device The wafer of the photoresist is transferred to a thermal plate of the chamber; and the wafer is heated by the thermal plate. In some embodiments, the lines T1, T41, T61, T62, T71 have the same material as the total lines T2, T42, T63, T72. For example, pipeline T1 T41, T61, T62, T71 and the total pipelines T2, T42, T63, and T72 are metal pipelines.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. Those skilled in the art having the ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (10)

An exhaust device includes: a first pipeline, comprising: a first body portion extending along a first direction; at least one first connecting portion connecting the first body portion, and the at least one first connecting portion The first valve device includes: a first air hole; a first sliding cover; and a first fixing device configured to The first sliding cover is fixed to the at least one first position; wherein the at least one first position determines the opening size of the first air hole, and the opening size of the first air hole is negatively related to the exhaust amount of the first pipeline Correlating; and a main line including an exhaust port and a first portion extending along the first direction, wherein the first portion is coupled to the first line. The venting device of claim 1, wherein the first line has a first connecting portion and a second connecting portion, and the air inlet of the first connecting portion is sized to the second connecting portion The air inlets are the same size. The venting device of claim 1, wherein, in the first direction, the entirety of the first cross-sectional area of the first body portion overlaps with the second cross-sectional area of the first portion; The normal vector of the first cross-sectional area is parallel to the first direction, and the normal vector of the second cross-sectional area is parallel to the first direction. The venting device of claim 1, further comprising: a second pipeline connecting the first portion, the second pipeline comprising: a second body portion extending along the first direction; at least one a second connecting portion connecting the second body portion, wherein the at least one second connecting portion includes a second air inlet; and a second valve device connecting the second body portion, the second valve device comprising: a first a second sliding cover; and a second fixing device configured to fix the second sliding cover to the at least one second position; wherein the at least one second position determines an opening size of the second air hole, And the relationship between the opening size of the second air hole and the displacement of the second line is negatively correlated; and a third valve device connecting the main line, the third valve device comprising: a third air hole; a third a sliding cover; and a third fixing device configured to fix the third sliding cover to at least a third position; wherein the at least one third position determines an opening size of the third air hole, and the third air hole Opening size and displacement of the first line And the relationship of the displacement of the second pipeline is negatively correlated. A semiconductor manufacturing system comprising: a first chamber configured to perform a semiconductor process on a wafer; a first gas passage connecting at least an exhaust port of the first chamber; a first pipeline, comprising: a first body portion extending along a first direction; a first connecting portion connecting the first body portion and connecting the first gas passage; and a first valve device connecting The first body portion, the first valve device includes: a first air hole; a first sliding cover; and a first fixing device configured to fix the first sliding cover to the at least one first position; The at least one first position determines an opening size of the first air hole, and a relationship between an opening size of the first air hole and a displacement amount of the first line is a negative correlation; a total pipeline including an extension along the first direction a first portion, the first portion is connected to the first line; and an air pump is coupled to one of the exhaust ports of the main line. The semiconductor manufacturing system of claim 5, further comprising a second chamber; and a second gas passage connecting at least the exhaust port of the second chamber; wherein the first pipeline further comprises a connection a second connecting portion of the first body portion, and the second connecting portion is connected to the second gas passage; wherein the air inlet of the first connecting portion has the same size as the air inlet of the second connecting portion; Wherein, in the first direction, the entirety of the first cross-sectional area of one of the first body portions overlaps with the second cross-sectional area of one of the first portions; The normal vector of the first cross-sectional area is parallel to the first direction, and the normal vector of the second cross-sectional area is parallel to the first direction. The semiconductor manufacturing system of claim 5, further comprising: a second chamber; a second gas passage connecting at least the exhaust port of the second chamber; and a second pipeline comprising: a second body portion extending along the first direction; a second connecting portion connecting the first body portion and connecting the second gas passage; and a second valve device connecting the second body portion, the first portion The two valve device includes: a second air hole; a second sliding cover; and a second fixing device configured to fix the second sliding cover to the at least one second position; wherein the at least one second position determines the a size of the opening of the second air hole, wherein the relationship between the opening size of the second air hole and the exhaust volume of the second line is negatively correlated; and a third valve device connecting the main line, the third valve device comprising: a third air hole; a third sliding cover; and a third fixing device configured to fix the third sliding cover to at least a third position; wherein the at least one third position determines an opening size of the third air hole And the opening size of the third air hole The amount of exhaust gas with the first line and the second The relationship between the displacement of the pipeline is negatively correlated. The semiconductor manufacturing system of claim 5, wherein the first chamber comprises: a photoresist coating device configured to apply a photoresist to the wafer; a thermal plate configured Heating the wafer to which the photoresist is applied; and a transfer device configured to transfer the wafer between the photoresist coating device and the thermal plate. A semiconductor manufacturing method includes: performing a semiconductor process on a wafer through a chamber; in the semiconductor process, passing a gas in the chamber through at least one connection portion of a first pipeline through an air pump Introducing a gas port into a body portion of the first line, and discharging the gas in the first line into a first portion of a main line; and adjusting the first valve device of the first line in the semiconductor process a position of the sliding cover to control the opening size of the air hole of the first valve device, thereby adjusting the displacement of the first pipeline; wherein the opening size of the air hole is negatively related to the exhaust amount of the first pipeline Related. The semiconductor manufacturing method of claim 9, wherein the semiconductor process comprises: heating the wafer to which the photoresist has been applied through a thermal plate.