CN108962779B

CN108962779B - Exhaust apparatus, semiconductor manufacturing system and semiconductor manufacturing method

Info

Publication number: CN108962779B
Application number: CN201710357807.4A
Authority: CN
Inventors: 刘冠亨; 李幸男; 巫昆晋; 郑杰夫
Original assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Current assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date: 2017-05-19
Filing date: 2017-05-19
Publication date: 2020-11-03
Anticipated expiration: 2037-05-19
Also published as: CN108962779A

Abstract

The application provides an exhaust apparatus, a semiconductor manufacturing system and a semiconductor manufacturing method. The exhaust device comprises a first flow line and a total flow line. The first pipeline includes: the first valve device includes a first main body portion, a first connecting portion, and a first valve device. The first body portion extends along a first direction. The first connecting portion is connected with the first main body portion and comprises an air inlet. The first valve device is connected to the first body portion, and the first valve device includes: the first air hole, the first sliding cover and the first fixing device. The position of the first sliding cover determines the opening size of the first air hole, and the relationship between the opening size of the first air hole and the air displacement of the first assembly line is negative correlation. The overall flow line includes an exhaust port and a first portion extending in a first direction, wherein the first portion is connected to the first flow line.

Description

Exhaust apparatus, semiconductor manufacturing system and semiconductor manufacturing method

Technical Field

Embodiments of the present disclosure relate to an exhaust system, and more particularly, to an exhaust device, a semiconductor manufacturing system having the exhaust device, and a semiconductor manufacturing method using the exhaust device.

Background

The exhaust means controls the amount of exhaust gas by means of a valve means. Generally, a conventional valve device (e.g., a butterfly valve) blocks a gas flow cross-sectional area of an exhaust line through a valve, thereby controlling an amount of exhaust gas in the exhaust line. However, as operating time accumulates, the valves of the conventional valve apparatus accumulate dust or deposits in the gas, thereby causing additional clogging of the exhaust line, resulting in additional exhaust gas volume reduction.

Therefore, there is a need for an exhaust apparatus, a semiconductor manufacturing system, and a semiconductor manufacturing method that can reduce the accumulation of dust or deposits in the gas.

Disclosure of Invention

Some embodiments of the present disclosure provide an exhaust apparatus including a first flow line and a total flow line. The first pipeline includes: the first valve device comprises a first main body part, at least one first connecting part and a first valve device. The first body portion extends along a first direction. The at least one first connecting portion is connected with the first main body portion and comprises an air inlet. The first valve device is connected to the first body portion, and the first valve device includes: the first air hole, the first sliding cover and the first fixing device. The first fixing device is configured to fix the first sliding cover at least one first position. The at least one first position determines the opening size of the first air hole, and the relationship between the opening size of the first air hole and the air displacement of the first assembly line is negative correlation. The overall flow line includes the exhaust and a first portion extending in a first direction, wherein the first portion is connected to the first flow line.

Some embodiments of the present disclosure provide a semiconductor manufacturing system, including: the system comprises a first chamber, a first gas passage, a first flow line, a total flow line and a suction pump. The first chamber is configured to perform a semiconductor process on a wafer. The first gas passage is connected to at least the exhaust port of the first chamber. The first pipeline includes: the first valve device includes a first main body portion, a first connecting portion, and a first valve device. The first body portion extends in a first direction. The first connecting part is connected with the first main body part and connected with the first gas channel. The first valve device is connected to the first body portion, and the first valve device includes: the first air hole, the first sliding cover and the first fixing device. The first fixing device is configured to fix the first sliding cover at least one first position. The at least one first position determines the opening size of the first air hole, and the relationship between the opening size of the first air hole and the air displacement of the first assembly line is negative correlation. The overall pipeline includes a first portion extending in a first direction and the first portion is coupled to the first pipeline. The suction pump is coupled to an exhaust of the total water line.

Some embodiments of the present disclosure provide a semiconductor manufacturing method, including: performing a semiconductor process on a wafer through a chamber; in the semiconductor manufacturing process, gas in the cavity is led into a main body part of a first flow line through a gas inlet of at least one connecting part of the first flow line by a suction pump, and the gas in the first flow line is discharged into a first part of a total flow line; in the semiconductor manufacturing process, the position of a sliding cover of a first valve device of the first assembly line is adjusted to control the opening size of an air hole of the first valve device, and further the air displacement of the first assembly line is adjusted. Wherein the relationship between the opening size of the air hole and the air displacement of the first assembly line is negative correlation.

Drawings

FIG. 1A is a schematic view of an exhaust apparatus according to an embodiment of the present disclosure;

FIG. 1B is a schematic view of a valve apparatus according to an embodiment of the present disclosure;

FIG. 1C is a schematic view of a valve apparatus according to an embodiment of the present disclosure;

FIG. 2 is a schematic illustration of an exhaust system according to an embodiment of the present disclosure;

FIG. 3 is a schematic diagram illustrating a cross-sectional area of a flow line looking down along a direction in relation to a total flow line in accordance with an embodiment of the present disclosure;

FIG. 4A is a schematic view of an exhaust apparatus according to an embodiment of the present disclosure;

FIG. 4B is a schematic view of an air intake in accordance with an embodiment of the present disclosure;

FIG. 5A is a schematic view of a valve apparatus according to an embodiment of the present disclosure;

FIG. 5B is a schematic view of a valve apparatus according to an embodiment of the present disclosure;

FIG. 6A is a schematic view of an exhaust apparatus according to an embodiment of the present disclosure;

FIG. 6B is a schematic diagram illustrating a cross-sectional area of a flow line and a total flow line looking down in a direction according to an embodiment of the present disclosure;

FIG. 7 is a schematic diagram of a semiconductor manufacturing system according to an embodiment of the present disclosure;

FIG. 8A is a schematic view of a semiconductor manufacturing system according to an embodiment of the present disclosure;

FIG. 8B is a schematic view of a chamber according to an embodiment of the present disclosure;

fig. 9 is a flow chart of a method of semiconductor fabrication in accordance with an embodiment of the present disclosure.

Description of reference numerals:

e1, E4, E6-exhaust apparatus

T1, T41, T61, T62 and T71-assembly line

T2, T42, T63, T72-Total water line

M1, M41, M61, M62, M71 to Main body section

C1, C41, C42, C61-C64 and C71-connecting part

V1, V4, V5, V5B, V61-V63, V71-valve device

O1, O41, O42, O61-O64, O71-air inlet

TP1, TP4, TP6, TP 7-first part

O2, O43, O65, H7, H8B to exhaust port

d1, d4, d6 and d 7-directions

B1, B5-base

H1, H5, H5B-air hole

S1, S5, S5B-sliding cover

F1, F2, F51, F52 and F5B-fixing device

TR1, TR2, TR51 and TR 52-guide groove

PM, PM7, PM 8-air pump

A1-A3, A7-air flow

HA-open mouth

CM1, CTP, CM61, CM62, CTP 6-cross section area

S7, S8 semiconductor manufacturing system

CH. CH81-CH 85-Chamber

P7, P81-P84-gas channel

PR photoresist coating device

HP-Hot plate

TD-conveying device

901-step

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. The following disclosure describes specific examples of components and arrangements thereof to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if embodiments describe a first feature formed over or on a second feature, that may include the first feature being in direct contact with the second feature, embodiments may also include additional features formed between the first and second features such that the first and second features are not in direct contact.

Spatially relative terms, such as "below," "lower," "above," "upper," and the like, may be used hereinafter with respect to elements or features in the figures to facilitate describing relationships between one element or feature and another element(s) or feature(s) in the figures. These spatially relative terms are intended to encompass the possible use or operation of the device in the figures in addition to the orientation depicted in the figures.

The same reference numbers and/or letters may be repeated in the various embodiments below for simplicity and clarity, and are not intended to limit the particular relationships between the various embodiments and/or structures discussed.

The terms first and second, etc. are used hereinafter for clarity in explanation, and are not used to correspond to or limit the claims. The terms first feature and second feature are not intended to be limited to the same or different features.

In the drawings, the shape or thickness of the structures may be exaggerated to simplify or facilitate labeling. It is to be understood that elements not specifically described or illustrated may exist in various forms well known to those skilled in the art.

FIG. 1A is a schematic view of an exhaust E1 according to an embodiment of the present disclosure. Exhaust E1 includes a pipeline T1 and a general pipeline T2. Line T1 includes a main body portion M1, a junction C1, a valve arrangement V1, wherein junction C1 includes an air inlet O1. Total flow line T2 includes a first portion TP1 and exhaust O2, where first portion TP1 is connected to flow line T1. The main body M1 and the first portion TP1 extend along the direction d 1.

In certain embodiments, the connection C1 extends in another direction different from the direction d 1. For example, the connecting portion C1 extends along a direction perpendicular to the direction d 1. In some embodiments, the exhaust O2 is coupled to a suction pump (not shown in FIG. 1A) via another flow line. In some embodiments, the exhaust port O2 is coupled to a suction pump (not shown in FIG. 1A) via another line, and the other line comprises a butterfly valve. The butterfly valve is used for controlling the air displacement of the other assembly line.

In some embodiments, valve arrangement V1 is as shown in fig. 1B. Valve device V1 of fig. 1B includes base B1, air vent H1, slide cover S1, securing device F1, securing device F2. The fixing devices F1, F2 each include a fixing post so that the slide cover S1 can move along the guide grooves TR1, TR2 of the slide cover S1 itself. The fixing devices F1 and F2 also each include a fixing part disposed on the fixing post, and provide friction between the sliding cover S1 and the fixing part, so that the sliding cover S1 can be rested at a certain position after being moved along the guiding grooves TR1 and TR2, thereby controlling the opening size of the air hole H1. For example, the fixing post may have a thread, and the fixing member may include a nut matching the fixing post and the thread, but the disclosure is not limited thereto. In this embodiment, the vent H1 allows gas to flow between the pedestal B1 and the body M1.

In some embodiments, the slide cover S1 and the air hole H1 may have any shape, and the slide cover S1 may completely cover the air hole H1 when moved to a specific position. In some embodiments, the guiding grooves TR1, TR2 and the fixing devices F1, F2 are disposed such that the sliding cover S1 can move in any direction, and the sliding cover S1 can completely cover the air hole H1 when being moved to a specific position. In some embodiments, the arrangement of guide slots TR1, TR2 and securing devices F1, F2 may allow slide S1 to move in direction d 1.

As shown in fig. 1C, when the slide cover S1 moves along the guide grooves TR1, TR2, the opening size of the air hole H1 is changed. When slide S1 is resting in the position of FIG. 1C, a portion of air holes H1 are shielded by slide S1 such that air holes H1 expose only a portion of opening HA. In some embodiments, the exhaust and valve assemblies of FIGS. 1A-1C operate as shown in FIG. 2.

FIG. 2 is a schematic illustration of an exhaust system according to an embodiment of the disclosure. In this embodiment, the exhaust system uses the exhaust device E1 of fig. 1A and the valve device V1 of fig. 1B, and the total pipeline T2 of the exhaust device E1 is coupled to the air pump PM. When the suction pump PM is activated and draws the air flow amount A3, the air inlet O1 of the exhaust device E1 will suck the air flow amount a1 (i.e. the exhaust amount of the flow line T1), and the air hole H1 of the valve device V1 will suck the air flow amount a2, in which case the air flow amount A3 is substantially equal to the sum of the air flow amount a1 and the air flow amount a 2. When the slide cover S1 does not completely cover the air hole H1, the size of the opening HA of the air hole H1 is positively correlated to the air flow amount a2, that is, when the opening HA becomes larger, the air flow amount a2 is increased. In other words, when the opening HA becomes larger and the air flow amount a2 increases, the air flow amount a1 is decreased to decrease the exhaust amount of the flow line T1 without changing the air flow amount A3, so that the size of the opening HA of the air vent H1 is inversely related to the exhaust amount of the flow line T1 (i.e., the air flow amount a 1). In some embodiments, when the slide cover S1 is moved and completely shields the air vent H1, the air flow amount a2 is zero and the air flow amount a1 will be equal to the air flow amount A3 (this is a condition where no air leakage occurs from the components of the exhaust E1). In some embodiments, the displacement may be in units of pascal (pa).

Based on the above operation mechanism, the displacement of the flow line T1 can be controlled by the size of the opening HA of the valve device V1. Unlike the conventional valve device (e.g., butterfly valve) that uses a valve to block the gas in the exhaust line, the valve device V1 uses the introduced gas flow (e.g., gas flow a2) to adjust the gas flow in the exhaust line T1, and no valve is disposed inside the main body M1, so that the phenomenon of dust or deposit in the gas accumulating in the valve in the exhaust line can be avoided or reduced, and the blockage of the valve device V1 can be reduced, and the operation time of the exhaust device E1 can be prolonged. For example, in a semiconductor process, a portion of the photoresist is heated and sublimated into a gas, which is then exhausted by an exhaust device. The sublimated photoresist may be deposited on the valve of the conventional valve device, thereby causing additional blockage to the flow line of the exhaust device, and the valve device V1 of the present embodiment adjusts the flow rate of the gas in the flow line T1 by introducing the gas flow, thereby preventing or reducing the accumulation of dust or deposits in the gas on the valve in the exhaust flow line, and further reducing the blockage of the valve device V1.

In some embodiments, the entirety of cross-sectional area CM1 of main body portion M1 is the cross-sectional area CTP1 of first portion TP1 that overlaps total waterline T2 when viewed from above along direction d1, as shown in fig. 3. In the embodiment shown in FIG. 3, the normal vectors of the cross-sectional area CM1 and the cross-sectional area CTP1 are both parallel to direction d 1. In this case, the gas flow path through which gas flows from main portion M1 to first portion TP1 of total flow line T2 may be straight. Since the gas flow path of the exhaust device E1 discharging the gas from the main body M1 to the first portion TP1 of the total flow line T2 can be straight, the exhaust device E1 can reduce the accumulation of dust or deposits in the gas at the bent portion of the gas flow path, thereby reducing the blockage of the exhaust device E1 and also prolonging the operable time of the exhaust device E1.

In some embodiments, the area of cross-sectional area CM1 may be equal to the area of cross-sectional area CTP1, and cross-sectional area CM1 completely overlaps cross-sectional area CTP1 in direction d 1. In some embodiments, flow line T1 may not have connection C1, and inlet O1 may be provided directly in main body portion M1. In some embodiments, pipeline T1 may include multiple connections.

FIG. 4A is a schematic view of an exhaust E4 according to an embodiment of the present disclosure. Exhaust E4 includes a pipeline T41 and a general pipeline T42. Line T41 includes a main body portion M41, a junction C41, a junction C42, and a valve device V4. Junction C41 includes inlet O41, and junction C42 includes inlet O42. Total flow line T42 includes a first portion TP4 and exhaust O43, where first portion TP4 is connected to flow line T41. The main body M41 and the first portion TP4 extend along the direction d 4. In this embodiment, the structure of valve arrangement V4 may be the same as valve arrangement V1 of FIG. 1B. In some embodiments, the connecting portions C41 and C42 extend along another direction different from the direction d 1. For example, the connecting portions C41 and C42 extend along the direction d 1.

In this embodiment, the inlet O41 is the same size as the inlet O42, as shown in FIG. 4B. Since the sizes of the inlet O41 and the inlet O42 are the same in this embodiment, the exhaust device E4 can reduce the phenomenon of uneven accumulation of dust or deposits generated by the difference in sizes between the inlet O41 and the inlet O42. In other words, vent E4 may not have to resort to more easily clogged air inlets (e.g., smaller opening air inlets) for more frequent cleaning actions. Since the sizes of the inlet O41 and the inlet O42 are the same, the exhaust device E4 can simultaneously and efficiently clean the blockage of each inlet during each cleaning operation, and the number of cleaning operations and the cost of the exhaust device E4 are reduced. In some embodiments, the inlet O41 and the inlet O42 may have the same arbitrary shape, and the inlet O41 and the inlet O42 are the same size.

In some embodiments, the valve device may have other structures. For example, a schematic view of valve arrangement V5 as shown in FIG. 5A. Taking the flow line T1 of FIG. 1A as an example, valve set V5 can replace valve set V1. The valve device V5 includes an air hole H5, a slide cover S5, a fixing device F51, and a fixing device F52. The air hole H5 is directly provided in the body M1. The fixing devices F51 and F52 each include a fixing post directly disposed on the main body M1, so that the sliding cover S5 can move along the guide grooves TR51 and TR52 of the sliding cover S5. The fixing devices F51 and F52 also each include a fixing part disposed on the fixing post, and provide friction between the sliding cover S5 and the fixing part, so that the sliding cover S5 can be rested at a certain position after being moved along the guiding grooves TR51 and TR52, thereby controlling the opening size of the air hole H5.

In this embodiment, the sliding cover S5 is designed to match the external shape of the main body M1, for example, when the main body M1 is cylindrical, the sliding cover S5 is shaped to match a curved surface of the outer surface of the main body M1, but the disclosure is not limited thereto. In this embodiment, the difference between the valve device V5 and the valve device V1 is that the valve device V5 does not need to be connected to the main body M1 through a base, and the air hole H5, the fixing devices F51, F52 and the sliding cover S5 of the valve device V5 can be directly disposed on the main body M1. In some embodiments, the slide cover S5 and the air hole H5 may have any shape, and the slide cover S5 may completely cover the air hole H5 when moved to a specific position. In some embodiments, the guiding grooves TR51, TR52 and the fixing devices F51, F52 are disposed such that the sliding cover S5 can move in any direction, and the sliding cover S5 can completely cover the air hole H5 when being moved to a specific position.

Fig. 5B is a schematic view of a valve arrangement V5B according to another embodiment of the present disclosure. Taking the line T1 of FIG. 1A as an example, valve set V5B may replace valve set V1. The valve device V5B includes a base B5, an air vent H5B, a sliding cover S5B, and a retainer F5B. The fixing device F5B includes a fixing post, so that the slide cover S5B can move clockwise or counterclockwise around the fixing post. The fixing device F5B also includes a fixing component disposed on the fixing post, providing a friction force between the sliding cover S5B and the fixing component, so that the sliding cover S5B can be rested at a certain position after being moved clockwise or counterclockwise, thereby controlling the opening size of the air hole H5B. In this embodiment, the vent H5B allows gas to flow between the pedestal B5 and the body M1. In this embodiment, the valve device V5B does not require a guide channel to control the position of the slide cover S5B. In some embodiments, the sliding cover S5B and the air hole H5B may have any shape, and the sliding cover S5B may completely cover the air hole H5B when moved to a specific position.

In some embodiments, the valve device of the present disclosure may be any valve device including a sliding cover with any shape, an air hole, and a fixing device capable of fixing the sliding cover in at least one position. The valve device can control the opening size of the air hole through the sliding cover.

FIG. 6A is a schematic view of an exhaust E6 according to an embodiment of the present disclosure. Exhaust E6 includes pipeline T61, pipeline T62, and total pipeline T63. Line T61 includes a main body portion M61, a junction C61, a junction C62, and a valve device V61. Line T62 includes a main body portion M62, a junction C63, a junction C64, and a valve device V62. The connecting portions C61 to C64 include air inlets O61 to O64, respectively. Total flow line T63 includes a first portion TP6, valve arrangement V63, exhaust O65, wherein first portion TP6 connects flow line T61 with flow line T62. The main body portion M61, the main body portion M62, and the first portion TP6 extend along the direction d 6. In some embodiments, the valve devices V61-V63 may be any of the valve devices described above. In some embodiments, valve device V63 may be connected to a portion of total water line T63 other than first portion TP 6. In some embodiments, the sizes of inlets O61, O62 are the same, and the sizes of inlets O63, O64 are the same.

In some embodiments, when the exhaust port O65 of the total flow line T63 is coupled to a pump (not shown in FIG. 6A), the total amount of gas that the pump can pump through the inlet ports O61-O64 can be adjusted by the valve arrangement V63. In addition, the total amount of the gas sucked by the gas inlets O61 and O62 can be further adjusted by the valve device V61; the total amount of gas sucked by the gas inlets O63, O64 can be further adjusted by the valve device V62.

For example, when the air pump is activated and draws a first air flow rate, the air inlets O61, O62 will draw a second air flow rate (i.e., the exhaust volume of the pipeline T61); the inlets O63, O64 will draw in a third amount of airflow (i.e., the amount of exhaust from line T62). As described above, when the air holes of the valve devices V61-V63 are completely shielded, the sum of the second air flow rate and the first air flow rate is equal to the first air flow rate; when the opening of the air vent of the valve device V61 becomes larger, the second air flow will decrease; when the opening of the air vent of the valve device V62 becomes larger, the third air flow rate will decrease; when the opening of the air vent of the valve device V63 becomes larger, the second air flow amount and the third air flow amount decrease. In other words, the relationship between the opening size of the vent of the valve device V61 and the displacement of the flow line T61 (i.e., the second gas flow rate) is inversely related; the relationship between the opening size of the vent of the valve device V62 and the displacement of the flow line T62 (i.e., the third air flow rate) is inversely related; the opening size of the vent of the valve device V63 is inversely related to the displacement of the flow lines T61 and T62 (i.e., the second flow rate and the third flow rate).

In some embodiments, the entirety of cross-sectional area CM61 of body portion M61 overlaps cross-sectional area CTP6 of first portion TP6 of total waterline T63 and the entirety of cross-sectional area CM62 of body portion M62 overlaps cross-sectional area CTP6 when viewed from above along direction d6, as shown in fig. 6B. In the embodiment shown in FIG. 6B, the normal vectors of the cross-sectional area CM61, the cross-sectional area CM62 and the cross-sectional area CTP6 are all parallel to the direction d 6. In this case, the gas flow path from the main body portion M61 to the first portion TP6 of the total flow line T63 may be straight, and the gas flow path from the main body portion M62 to the first portion TP6 may also be straight. Since the gas flow paths of the exhaust device E6 discharging the gas from the main body portions M61 and M62 to the first portion TP6 can be all straight lines, the exhaust device E6 can reduce the phenomenon that dust or deposits in the gas are accumulated at the bent portion of the gas flow path, thereby reducing the blockage phenomenon of the exhaust device E6 and prolonging the operable time of the exhaust device E6.

In some embodiments, pipeline T61 may include multiple connections, and pipeline T62 may also include multiple connections. In some embodiments, the flow line T61 may not have connections C61, C62, and the air inlets O61, O62 may be provided directly at the main body portion M61; the flow line T62 may not have the connecting portions C63 and C64, and the air inlets O63 and O64 may be directly provided in the main body portion M62.

FIG. 7 is a schematic diagram of a semiconductor manufacturing system S7, in accordance with an embodiment of the present disclosure. The semiconductor manufacturing system S7 includes a chamber (chamber) CH, an exhaust unit, a gas passage P7 connecting an exhaust port H7 of the chamber CH with the exhaust unit, and an air pump PM 7. The exhaust includes line T71 and total line T72. Line T71 includes main body M71, connecting portion C71, and valve device V71. The connection C71 includes a gas inlet O71, and a gas inlet O71 connects the gas passage P7. The total flow line T72 includes a first portion TP7 and an exhaust (not shown in fig. 7), wherein the first portion TP7 is connected to the flow line T1 and the exhaust is coupled to the suction pump PM 7. The main body M71 and the first portion TP7 extend along the direction d 7. In some embodiments, valve arrangement V7 may be any of the valve arrangements described above. In some embodiments, the exhaust, the gas passageway P7, and the pump PM7 in the semiconductor manufacturing system S7 may be considered an exhaust system. In some embodiments, the semiconductor manufacturing system S7 may include a semiconductor tool (not shown) in which the chamber CH is disposed.

In some embodiments, the chamber CH is configured to perform a semiconductor process on a wafer, such as oxidation, chemical vapor deposition, photoresist coating, soft baking, etc., but the disclosure is not limited thereto. The pump PM7 may pump gases from the chamber CH through the exhaust and gas passageway P7 when the chamber CH is configured to perform semiconductor processing on the wafers. According to the valve device of the above embodiment, the valve device V7 regulates the gas flow a7 in the flow line T71 by introducing a gas flow, so that the accumulation of dust or deposits in the gas on the valve of a conventional valve device (e.g., butterfly valve) can be avoided or reduced, and the clogging of the valve device V7 can be reduced, while the operable time of the semiconductor manufacturing system S7 can be extended.

FIG. 8A is a schematic diagram of a semiconductor manufacturing system S8, in accordance with an embodiment of the present disclosure. The semiconductor manufacturing system S8 includes chambers CH81-CH85, an exhaust, gas passages P81-P84 connecting the chambers CH81-CH85 and the exhaust, and an air pump PM 8. The exhaust device comprises a pipeline T61, a pipeline T62 and a total pipeline T63. The corresponding relationship between the above components of the exhaust device can refer to the content of the exhaust device E6 in fig. 6A, and is not described herein again. The gas inlets (for example, gas inlets O61 to O64 in fig. 6A) of the respective connectors C61 to C64 are connected to the gas passages P81 to P84, respectively. An exhaust port (e.g., exhaust port O65 of fig. 6A) of total flow line T63 is coupled to pump PM 8.

In some embodiments, the gas passages P81-P84 may each be connected to at least one chamber. In some embodiments, at least one of the chambers CH81-CH85 may be configured to perform a semiconductor process on a wafer. For example, in some embodiments, the chamber CH81 may include an exhaust port H8B, a photoresist coating apparatus PR, a heat plate HP, and a transfer apparatus TD, as shown in fig. 8B. The exhaust port H8B is connected to the gas passage P81. The photoresist coating apparatus PR may coat a photoresist on the wafer. The transfer device TD transfers the wafer between the photoresist coating device PR and the hot plate HP. The hot plate HP may heat the wafer coated with the photoresist. In some embodiments, the photoresist coating apparatus PR may include a nozzle, a rotary stage, a coating groove, and the like, but the present disclosure is not limited thereto. In some embodiments, the heat plate HP may include a heating device, a heating channel, and the like, but the disclosure is not limited thereto. In some embodiments, the transfer device TD may include a conveyor belt or a robot arm, etc., but the disclosure is not limited thereto.

In some embodiments, the pump PM8 may evacuate gases (e.g., gases including photoresist sublimates) from the chamber CH81 through gas channel P81, flow line T61 and total flow line T63 when the chamber CH81 is performing semiconductor processing on the wafer (e.g., heating photoresist applied to the wafer). According to the valve devices of the embodiments described above, the valve devices V61-V63 use the introduced gas flow to adjust the gas flow in the flow line T61, so that the accumulation of dust or deposits (e.g., deposits caused by sublimed photoresist) in the gas on the valve of the conventional valve device (e.g., butterfly valve) can be avoided or reduced, and the blockage of the valve devices V61-V63 can be reduced, and the operation time of the semiconductor manufacturing system S8 can be prolonged.

In some embodiments, the inlets of junctions C61, C62 of fig. 8A are the same size, and the inlets of junctions C63, C64 are the same size. When the chambers CH81 and CH82 simultaneously and individually perform the same or different semiconductor processes on different wafers, the sizes of the inlets of the connections C61 and C62 in fig. 8A are the same, so the flow line T61 in fig. 8A can reduce the uneven accumulation of dust or deposits generated by the different sizes of the inlets of the connections C61 and C62, so that the semiconductor manufacturing system S8 can perform more frequent cleaning operations without having to perform more frequent cleaning operations on the inlets that are easily blocked (e.g., the inlets with smaller openings), thereby efficiently cleaning the blockages of the inlets of the connections C61 and C62, and reducing the number and cost of the cleaning operations of the semiconductor manufacturing system S8.

In some embodiments, the gas flow path from main body portion M61 to first portion TP6 of total flow line T63 may be straight, and the gas flow path from main body portion M62 to first portion TP6 may also be straight. In this case, the accumulation of dust or deposits in the gas (e.g., deposits caused by sublimed photoresist) at the bends of the gas flow path can be reduced, thereby extending the operable time of the semiconductor manufacturing system S8.

Fig. 9 is a flow chart of a method of semiconductor fabrication in accordance with an embodiment of the present disclosure. In step 901, a semiconductor process is performed on a wafer through a chamber. In step 902, during the semiconductor fabrication process, a gas in the chamber is introduced into a main body portion of a first flow line through a gas inlet of at least one connection portion of the first flow line by a gas pump, and the gas in the first flow line is exhausted into a first portion of a total flow line. In step 903, during the semiconductor process, a position of a sliding cover of a first valve device of the first flow line is adjusted to control an opening size of an air hole of the first valve device, thereby adjusting an exhaust volume of the first flow line.

In some embodiments, the main body portion and the first portion extend along a first direction. In some embodiments, the relationship between the size of the opening of the vent and the displacement of the first flow line is negative.

In some implementations, the semiconductor fabrication method shown in fig. 9 further includes the steps of: coating photoresist on the wafer by a photoresist coating device of the chamber; transferring the wafer coated with the photoresist to a hot plate of the chamber by a transfer device; and heating the wafer by the hot plate. In some embodiments, pipelines T1, T41, T61, T62, T71 are of the same material as total pipelines T2, T42, T63, T72. For example, lines T1, T41, T61, T62, T71 and total lines T2, T42, T63, T72 are metal lines.

While the present disclosure has been described with reference to the foregoing embodiments, it is not intended to be limited thereto. Those skilled in the art to which this disclosure pertains will readily appreciate that numerous modifications and adaptations may be made without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure should be determined by the appended claims.

Claims

1. An exhaust apparatus comprising:

a first pipeline, comprising:

a first body portion extending along a first direction;

at least one first connecting part connected with the first main body part, wherein the at least one first connecting part comprises an air inlet; and

a first valve device coupled to the first body portion, the first valve device comprising:

a first air hole;

a first sliding cover; and

a first fixing device configured to fix the first sliding cover at least one first position;

wherein the at least one first position determines the opening size of the first vent, and the relationship between the opening size of the first vent and the displacement of the first flow line is negative correlation; and

a total assembly line includes an exhaust port and a first portion extending in the first direction, wherein the first portion is coupled to the first assembly line.

2. The exhaust apparatus as claimed in claim 1, wherein the first flow line has a first connecting portion and a second connecting portion, and the size of the inlet of the first connecting portion is the same as the size of the inlet of the second connecting portion.

3. The exhaust apparatus as claimed in claim 1, wherein, in the first direction, an entirety of a first cross-sectional area of the first body portion overlaps a second cross-sectional area of the first portion;

wherein, the normal vector of the first sectional area is parallel to the first direction, and the normal vector of the second sectional area is parallel to the first direction.

4. The exhaust apparatus of claim 1, further comprising:

a second pipeline coupled to the first portion, the second pipeline comprising:

a second body portion extending along the first direction;

at least one second connecting part connected with the second main body part and comprising a second air inlet; and

a second valve assembly coupled to the second body portion, the second valve assembly comprising:

a second air hole;

a second sliding cover; and

a second fixing device configured to fix the second sliding cover at least one second position;

wherein the at least one second position determines the opening size of the second air hole, and the relationship between the opening size of the second air hole and the air displacement of the second assembly line is negative correlation; and

a third valve device connected to the total flow line, the third valve device comprising:

a third air hole;

a third sliding cover; and

a third fixing device configured to fix the third sliding cover at least one third position;

the at least one third position determines the opening size of the third air hole, and the relationship between the opening size of the third air hole and the displacement of the first assembly line and the displacement of the second assembly line are all negative correlation.

5. A semiconductor manufacturing system, comprising:

a first chamber configured to perform a semiconductor process on a wafer;

a first gas channel at least connected with the exhaust port of the first chamber;

a first pipeline, comprising:

a first body portion extending along a first direction;

the first connecting part is connected with the first main body part and is connected with the first gas channel; and

a first air hole;

a first sliding cover; and

wherein the at least one first position determines the opening size of the first vent, and the relationship between the opening size of the first vent and the displacement of the first flow line is negative correlation;

a bus pipeline including a first portion extending in the first direction, the first portion being connected to the first pipeline; and

an air pump coupled to an exhaust port of the main flow line.

6. The semiconductor manufacturing system of claim 5, further comprising a second chamber;

a second gas passage at least connected to the exhaust port of the second chamber;

the first assembly line also comprises a second connecting part connected with the first main body part, and the second connecting part is connected with the second gas channel;

the size of the air inlet of the first connecting part is the same as that of the air inlet of the second connecting part;

wherein, in the first direction, the whole of a first cross-sectional area of the first main body part overlaps with a second cross-sectional area of the first part;

7. The semiconductor manufacturing system of claim 5, further comprising:

a second chamber;

a second pipeline comprising:

a second body portion extending along the first direction;

the second connecting part is connected with the first main body part and the second gas channel; and

a second air hole;

a second sliding cover; and

a third air hole;

a third sliding cover; and

8. The semiconductor manufacturing system of claim 5, wherein the first chamber comprises:

a photoresist coating device configured to coat photoresist on the wafer;

a hot plate configured to heat the wafer coated with the photoresist; and

a transfer device configured to transfer the wafer between the photoresist coating device and the hot plate.

9. A semiconductor manufacturing method, comprising:

performing a semiconductor process on a wafer through a chamber;

in the semiconductor manufacturing process, gas in the chamber is led into a main body part of a first assembly line through a gas inlet of at least one connecting part of the first assembly line by a suction pump, and the gas in the first assembly line is discharged into a first part of a total assembly line; and

in the semiconductor manufacturing process, the position of a sliding cover of a first valve device of the first assembly line is adjusted to control the opening size of an air hole of the first valve device, and further the exhaust volume of the first assembly line is adjusted;

wherein the relationship between the size of the opening of the air hole and the displacement of the first assembly line is negative correlation.

10. The semiconductor manufacturing method according to claim 9, wherein the semiconductor process comprises:

the wafer coated with photoresist is heated by a hot plate.