TWI626331B - Gas phase growth device and abnormality detection method - Google Patents

Gas phase growth device and abnormality detection method Download PDF

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Publication number
TWI626331B
TWI626331B TW105132122A TW105132122A TWI626331B TW I626331 B TWI626331 B TW I626331B TW 105132122 A TW105132122 A TW 105132122A TW 105132122 A TW105132122 A TW 105132122A TW I626331 B TWI626331 B TW I626331B
Authority
TW
Taiwan
Prior art keywords
value
unit
heating unit
phase growth
exceeded
Prior art date
Application number
TW105132122A
Other languages
English (en)
Chinese (zh)
Other versions
TW201723218A (zh
Inventor
早野貴憲
伊藤英樹
飯島達彦
Original Assignee
紐富來科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 紐富來科技股份有限公司 filed Critical 紐富來科技股份有限公司
Publication of TW201723218A publication Critical patent/TW201723218A/zh
Application granted granted Critical
Publication of TWI626331B publication Critical patent/TWI626331B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW105132122A 2015-10-08 2016-10-05 Gas phase growth device and abnormality detection method TWI626331B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-200348 2015-10-08
JP2015200348A JP2017073498A (ja) 2015-10-08 2015-10-08 気相成長装置および異常検出方法

Publications (2)

Publication Number Publication Date
TW201723218A TW201723218A (zh) 2017-07-01
TWI626331B true TWI626331B (zh) 2018-06-11

Family

ID=58487648

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105132122A TWI626331B (zh) 2015-10-08 2016-10-05 Gas phase growth device and abnormality detection method

Country Status (5)

Country Link
US (1) US20180291507A1 (cg-RX-API-DMAC10.html)
JP (1) JP2017073498A (cg-RX-API-DMAC10.html)
DE (1) DE112016004625T5 (cg-RX-API-DMAC10.html)
TW (1) TWI626331B (cg-RX-API-DMAC10.html)
WO (1) WO2017061334A1 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018101010B4 (de) * 2017-09-25 2025-01-09 X-Fab Semiconductor Foundries Ag Echtzeit Monitoring eines Mehrzonen-Vertikalofens mit frühzeitiger Erkennung eines Ausfalls eines Heizzonen-Elements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056635A1 (en) * 2003-03-31 2005-03-17 Kokusai Electric Semiconductor Service Inc. Heater inspection apparatus and semiconductor manufacturing apparatus having heater inspection apparatus mounted thereon
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP2009245978A (ja) * 2008-03-28 2009-10-22 Yokogawa Electric Corp 半導体製造装置
WO2012165174A1 (ja) * 2011-06-01 2012-12-06 シャープ株式会社 抵抗加熱ヒータの劣化検出装置および方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352938A (ja) * 2001-05-28 2002-12-06 Tokyo Electron Ltd 熱処理装置のヒ−タ素線の断線予測方法及び熱処理装置
JP4326570B2 (ja) * 2007-04-17 2009-09-09 東京エレクトロン株式会社 ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム
JP4343253B1 (ja) * 2008-03-27 2009-10-14 Ｔｄｋ株式会社 密閉容器の蓋開閉装置及び該開閉装置を用いたガス置換装置
KR101182502B1 (ko) * 2008-09-30 2012-09-12 도쿄엘렉트론가부시키가이샤 기판의 이상 배치 상태의 검지 방법, 기판 처리 방법, 컴퓨터 판독 가능한 기억 매체 및 기판 처리 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056635A1 (en) * 2003-03-31 2005-03-17 Kokusai Electric Semiconductor Service Inc. Heater inspection apparatus and semiconductor manufacturing apparatus having heater inspection apparatus mounted thereon
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP2009245978A (ja) * 2008-03-28 2009-10-22 Yokogawa Electric Corp 半導体製造装置
WO2012165174A1 (ja) * 2011-06-01 2012-12-06 シャープ株式会社 抵抗加熱ヒータの劣化検出装置および方法

Also Published As

Publication number Publication date
DE112016004625T5 (de) 2018-06-21
TW201723218A (zh) 2017-07-01
US20180291507A1 (en) 2018-10-11
WO2017061334A1 (ja) 2017-04-13
JP2017073498A (ja) 2017-04-13

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