TWI626280B - 用於加工介電基板之方法及組合物 - Google Patents

用於加工介電基板之方法及組合物 Download PDF

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Publication number
TWI626280B
TWI626280B TW105122097A TW105122097A TWI626280B TW I626280 B TWI626280 B TW I626280B TW 105122097 A TW105122097 A TW 105122097A TW 105122097 A TW105122097 A TW 105122097A TW I626280 B TWI626280 B TW I626280B
Authority
TW
Taiwan
Prior art keywords
polishing
cerium oxide
hydroxamic acid
composition
ppm
Prior art date
Application number
TW105122097A
Other languages
English (en)
Chinese (zh)
Other versions
TW201718792A (zh
Inventor
越 林
Viet LAM
崔驥
Ji Cui
Original Assignee
卡博特微電子公司
Cabot Microelectronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司, Cabot Microelectronics Corporation filed Critical 卡博特微電子公司
Publication of TW201718792A publication Critical patent/TW201718792A/zh
Application granted granted Critical
Publication of TWI626280B publication Critical patent/TWI626280B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW105122097A 2015-07-13 2016-07-13 用於加工介電基板之方法及組合物 TWI626280B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562191824P 2015-07-13 2015-07-13
US62/191,824 2015-07-13

Publications (2)

Publication Number Publication Date
TW201718792A TW201718792A (zh) 2017-06-01
TWI626280B true TWI626280B (zh) 2018-06-11

Family

ID=57757573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105122097A TWI626280B (zh) 2015-07-13 2016-07-13 用於加工介電基板之方法及組合物

Country Status (7)

Country Link
US (2) US10029345B2 (https=)
EP (2) EP3323142B1 (https=)
JP (1) JP6879995B2 (https=)
KR (1) KR102690419B1 (https=)
CN (1) CN107851568B (https=)
TW (1) TWI626280B (https=)
WO (1) WO2017011451A1 (https=)

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US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
TWI673357B (zh) * 2016-12-14 2019-10-01 Cabot Microelectronics Corporation 自化學機械平坦化基板移除殘留物之組合物及方法
JP7132942B2 (ja) * 2017-04-17 2022-09-07 シーエムシー マテリアルズ，インコーポレイティド バルク酸化物の平坦化のための自己停止研磨組成物および方法
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
JP6985116B2 (ja) * 2017-11-17 2021-12-22 信越化学工業株式会社 合成石英ガラス基板用の研磨剤及び合成石英ガラス基板の研磨方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
KR102241941B1 (ko) * 2018-12-28 2021-04-20 주식회사 케이씨텍 다결정 실리콘 연마용 cmp 슬러리 조성물 및 그를 이용한 연마 방법
CN117120563B (zh) * 2020-12-21 2026-03-27 Cmc材料有限责任公司 用于高形貌选择性的自停止性抛光组合物与方法
CN114350264B (zh) * 2022-02-18 2023-06-02 河北工业大学 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法
TW202547985A (zh) * 2024-03-25 2025-12-16 美商恩特葛瑞斯股份有限公司 氧化鈰及異羥肟酸化學機械拋光(cmp)組合物

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TW200426932A (en) * 2003-02-03 2004-12-01 Cabot Microelectronics Corp Method of polishing a silicon-containing dielectric
TW200940692A (en) * 2007-11-27 2009-10-01 Cabot Microelectronics Corp Copper-passivating CMP compositions and methods
TW201011826A (en) * 2008-07-30 2010-03-16 Cabot Microelectronics Corp Methods and compositions for polishing silicon-containing substrates

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TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
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TW200426932A (en) * 2003-02-03 2004-12-01 Cabot Microelectronics Corp Method of polishing a silicon-containing dielectric
TW200940692A (en) * 2007-11-27 2009-10-01 Cabot Microelectronics Corp Copper-passivating CMP compositions and methods
TW201011826A (en) * 2008-07-30 2010-03-16 Cabot Microelectronics Corp Methods and compositions for polishing silicon-containing substrates

Also Published As

Publication number Publication date
EP3323142A1 (en) 2018-05-23
EP3323142A4 (en) 2019-03-27
CN107851568A (zh) 2018-03-27
US20170014969A1 (en) 2017-01-19
KR102690419B1 (ko) 2024-08-01
TW201718792A (zh) 2017-06-01
EP4345142A2 (en) 2024-04-03
EP4345142A3 (en) 2024-05-29
US10639766B2 (en) 2020-05-05
JP2018529219A (ja) 2018-10-04
CN107851568B (zh) 2021-10-08
KR20180021387A (ko) 2018-03-02
JP6879995B2 (ja) 2021-06-02
EP3323142B1 (en) 2024-08-28
US20180297169A1 (en) 2018-10-18
US10029345B2 (en) 2018-07-24
WO2017011451A1 (en) 2017-01-19

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