TWI625810B - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- TWI625810B TWI625810B TW103141438A TW103141438A TWI625810B TW I625810 B TWI625810 B TW I625810B TW 103141438 A TW103141438 A TW 103141438A TW 103141438 A TW103141438 A TW 103141438A TW I625810 B TWI625810 B TW I625810B
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- 238000003672 processing method Methods 0.000 title abstract description 8
- 235000012431 wafers Nutrition 0.000 claims abstract description 116
- 230000001681 protective effect Effects 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims description 20
- 238000005336 cracking Methods 0.000 claims description 4
- 238000002407 reforming Methods 0.000 claims description 4
- 239000010419 fine particle Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000002834 transmittance Methods 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 4
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 12
- 239000004575 stone Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
本發明為一種晶圓之加工方法，課題為，提供一種可以在不使抗折強度惡化的情形下形成比較厚的厚度之晶片的晶圓之加工方法。解決手段為，設定有交叉的複數條分割預定線的晶圓之加工方法，特徵在於，其包括：溝形成步驟，從晶圓正面沿著該分割預定線形成未達最終完工厚度之深度的複數條溝；保護膠帶貼附步驟，在晶圓正面貼附保護膠帶；雷射加工步驟，將具有可穿透晶圓之波長的雷射光束之聚光點定位在晶圓內部的比該最終完工厚度還要靠近背面側的位置，將該雷射光束朝向晶圓的背面而沿著該分割預定線進行照射，在晶圓內部形成沿著該分割預定線的改質層，並且形成從該改質層朝向該溝延伸且沿著該分割預定線的裂痕層；及磨削步驟，以磨削構件將晶圓的背面磨削以薄化至該最終完工厚度並且除去該改質層，且沿著該分割預定線將晶圓分割成晶片。 The present invention is a method of processing a wafer, and it is an object of the invention to provide a wafer processing method capable of forming a wafer having a relatively thick thickness without deteriorating the bending strength. The solution is a method for processing a wafer having a plurality of intersecting predetermined dividing lines, characterized in that it comprises a groove forming step of forming a plurality of depths from the front surface of the wafer along the dividing line to a depth that does not reach the final finished thickness. a groove; a protective tape attaching step, attaching a protective tape on the front side of the wafer; and a laser processing step of positioning a focused spot of the laser beam having a wavelength that can penetrate the wafer inside the wafer than the final completion The thickness is also close to the position on the back side, and the laser beam is irradiated toward the back surface of the wafer along the dividing line, and a modified layer along the dividing line is formed inside the wafer, and the modified layer is formed. a crack layer extending toward the groove and along the dividing line; and a grinding step of grinding the back surface of the wafer with a grinding member to thin to the final finished thickness and removing the modified layer, and along The dividing line is divided into wafers.
Description
本發明是有關於一種半導體晶圓等的晶圓之加工方法。 The present invention relates to a method of processing a wafer such as a semiconductor wafer.
在半導體裝置製程中，是在大致呈圓板狀的半導體晶圓的正面上以形成為格子狀的分割預定線(切割道)所劃分出的多個區域中分別形成IC、LSI的裝置，並透過將形成有該裝置的各個區域沿著分割預定線進行分割，以製造裝置晶片。 In the semiconductor device manufacturing process, an IC or an LSI is formed in each of a plurality of regions defined by a predetermined dividing line (cutting track) formed in a lattice shape on the front surface of a substantially disk-shaped semiconductor wafer, and The device wafer is manufactured by dividing each region in which the device is formed along a dividing line.
作為將半導體晶圓分割成一個個裝置晶片的分割裝置，一般是使用被稱為切割裝置的切削裝置，且此切削裝置是以具有非常薄的刀刃的切削刀沿著分割預定線切削半導體晶圓，以將半導體晶圓分割成一個個裝置晶片。可將如此進行而分割成的裝置晶片進行封裝，以廣泛地應用於手機或電腦等的各種電子機器上。 As a dividing device for dividing a semiconductor wafer into individual device wafers, a cutting device called a cutting device is generally used, and the cutting device cuts a semiconductor wafer along a dividing line by a cutting blade having a very thin cutting edge. To divide the semiconductor wafer into individual device wafers. The device wafer divided into the above can be packaged and widely used in various electronic devices such as mobile phones and computers.
但是，當要以切削刀對例如厚度在300μm以上等的比較厚的厚晶圓進行切割時，則會有所謂的大量產生背面崩裂(chipping)的問題。因此，為了要減少背面崩裂， 已被考慮的作法有，使用例如特開昭64-38209號公報所揭示的先切割法(DBG)，或是WO2003-077295號公報所揭示的加工方法(SDBG)。 However, when a relatively thick thick wafer having a thickness of, for example, 300 μm or more is to be cut with a cutter, there is a problem that a large amount of back surface chipping occurs. Therefore, in order to reduce back cracking, For example, the first cutting method (DBG) disclosed in Japanese Laid-Open Patent Publication No. SHO-64-38209 or the processing method (SDBG) disclosed in WO2003-077295 is used.
先切割法是，從半導體晶圓的正面沿著分割預定線形成預定深度(相當於裝置晶片的最終完工厚度之深度)的分割溝，並將在正面上已形成有分割溝的半導體晶圓的背面磨削，以使分割溝露出於背面並分割成一個個裝置晶片的技術，且可以將裝置晶片的厚度加工至100μm以下。 The first dicing method is to form a dividing groove of a predetermined depth (corresponding to a depth of a final thickness of the device wafer) from a front surface of the semiconductor wafer along a predetermined dividing line, and to form a semiconductor wafer having a dividing groove formed on the front surface The back grinding is performed so that the division groove is exposed on the back surface and divided into individual device wafers, and the thickness of the device wafer can be processed to 100 μm or less.
另一方面，SDBG法則是將雷射加工方法與磨削方法組合而成的技術，且為，首先將對晶圓具有穿透性的波長的雷射光束照射在晶圓上，以沿著分割預定線在預定深度的位置(相當於從晶圓的正面到裝置晶片的最終完工厚度的深度以上的位置)上形成改質層，同時形成從改質層延伸至晶圓正面側的裂痕(crack)層，之後，磨削晶圓的背面以將晶圓薄化至最終完工厚度，並藉由磨削壓力以將裂痕層作為分割起點的方式將晶圓分割成一個個裝置晶片的技術。 On the other hand, the SDBG rule is a technique in which a laser processing method and a grinding method are combined, and first, a laser beam having a wavelength that is transparent to a wafer is irradiated onto a wafer to be divided along the segment. The predetermined line forms a modified layer at a predetermined depth (corresponding to a position from a front surface of the wafer to a depth greater than a final thickness of the device wafer), and forms a crack extending from the modified layer to the front side of the wafer (crack) The layer, after which the back side of the wafer is ground to thin the wafer to the final finished thickness, and the technique of dividing the wafer into individual device wafers by grinding the pressure to use the crack layer as a starting point for the division.
專利文獻1：日本專利特開昭64-38209號公報 Patent Document 1: Japanese Patent Laid-Open No. 64-38209
專利文獻2：WO2003-077295號公報 Patent Document 2: WO2003-077295
但是，在引用文獻1中所記載的先切割法中，當形成晶圓厚度一半以上的深度的半切割溝時，在溝形成後，為了在進行後續的背面磨削時保護形成在正面上的裝置，必須在晶圓的正面貼附保護膠帶，但是在貼附保護膠帶當中的操作處理時，會有導致晶圓發生破損的問題。 However, in the first dicing method described in the cited document 1, when a half-cut groove having a depth of at least half of the thickness of the wafer is formed, after the groove is formed, it is formed on the front surface for protection in the subsequent back grinding. The device must be attached with a protective tape on the front side of the wafer. However, when handling the protective tape, there is a problem that the wafer is damaged.
又，即使是在引用文獻2中所記載的SDBG法，由於能夠使其從一個改質層延伸的裂痕層為150μm左右，所以若是為了不使抗折強度惡化，而做成不使改質層殘存在磨削後的晶片側面的形式時，會有難以形成150μm以上之厚度的晶片的問題。 Moreover, even in the SDBG method described in the cited document 2, since the crack layer extending from one modified layer can be about 150 μm, the modified layer is not formed so as not to deteriorate the bending strength. When the form of the side surface of the wafer after grinding remains, there is a problem that it is difficult to form a wafer having a thickness of 150 μm or more.
本發明是有鑒於此點而所作成的，其目的在於提供，可以在不使抗折強度惡化的情形下形成比較厚的厚度之晶片的晶圓之加工方法。 The present invention has been made in view of the above, and an object thereof is to provide a method of processing a wafer which can form a wafer having a relatively thick thickness without deteriorating the bending strength.
依據本發明，為設定有交叉的複數條分割預定線的晶圓之加工方法，特徵在於，其包括：溝形成步驟，從晶圓的正面沿著該分割預定線形成未達最終完工厚度之深度的複數個溝；保護膠帶貼附步驟，實施過該溝形成步驟後，在晶圓正面貼附保護膠帶；保持步驟，實施過該保護膠帶貼附步驟後，以工作夾台(chuck table)隔著該保護膠帶保持晶圓；雷射加工步驟，實施過該保持步驟後，將對晶圓具有穿透性的波長的雷射光束之聚光點定位在晶圓內部的比該最終完工厚度還要靠近背面側的位置，將該雷射光束朝向晶圓的背面而沿著該分割預定線進行照射，在晶圓 內部形成沿著該分割預定線的改質層，並且形成從該改質層朝向該溝而沿著延伸的該分割預定線的裂痕層；及磨削步驟，實施過該雷射加工步驟後，以磨削構件將晶圓的背面磨削以薄化至該最終完工厚度並除去該改質層，且沿著該分割預定線將晶圓分割成晶片。 According to the present invention, a method of processing a wafer for dividing a plurality of predetermined lines by crossing is characterized in that it includes a groove forming step of forming a depth from the front surface of the wafer along the dividing line to a final thickness that is not completed. a plurality of grooves; a protective tape attaching step, after the step of forming the groove is performed, a protective tape is attached to the front surface of the wafer; the holding step is performed, and after the protective tape attaching step is performed, the chuck table is separated by a chuck table Holding the protective tape to hold the wafer; the laser processing step, after performing the holding step, positioning the condensed spot of the laser beam having a penetrating wavelength of the wafer inside the wafer than the final finished thickness To be close to the back side, the laser beam is directed toward the back side of the wafer along the predetermined line of the line, on the wafer Forming a modified layer along the predetermined dividing line, and forming a crack layer extending along the dividing line from the modified layer toward the groove; and a grinding step, after performing the laser processing step, The back surface of the wafer is ground with a grinding member to be thinned to the final finished thickness and the modified layer is removed, and the wafer is divided into wafers along the dividing line.
在本發明之加工方法中，因為在晶圓的正面上形成溝之後會貼附保護膠帶，因此即使在晶圓內部形成了改質層與裂痕層，也能藉由保護膠帶保持剛性，並不會有損及操作性之情形。 In the processing method of the present invention, since the protective tape is attached after the groove is formed on the front surface of the wafer, even if the modified layer and the crack layer are formed inside the wafer, the rigidity can be maintained by the protective tape, and It will damage the operability.
此外，因為可藉由磨削將改質層除去並且沿著分割預定線將晶圓分割，所以在晶片上不會有改質層殘存的情形下，也不會有使抗折強度惡化的情形。 In addition, since the modified layer can be removed by grinding and the wafer is divided along the dividing line, there is no case where the modified layer remains on the wafer, and the bending strength is not deteriorated. .
10‧‧‧切削單元 10‧‧‧Cutting unit
11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer
11a‧‧‧正面 11a‧‧‧ positive
11b‧‧‧背面 11b‧‧‧Back
12‧‧‧轉軸殼體 12‧‧‧Shaft housing
13‧‧‧分割預定線 13‧‧‧Division line
14、26‧‧‧轉軸 14, 26‧‧‧ shaft
15‧‧‧裝置 15‧‧‧ device
16‧‧‧切削刀 16‧‧‧Cutter
17‧‧‧缺口 17‧‧‧ gap
18、22‧‧‧工作夾台 18, 22‧‧‧Working table
19‧‧‧溝 19‧‧‧ditch
20‧‧‧聚光器 20‧‧‧ concentrator
21‧‧‧保護膠帶 21‧‧‧Protection tape
23‧‧‧改質層 23‧‧‧Modified layer
24‧‧‧磨削單元 24‧‧‧ grinding unit
25‧‧‧裂痕層 25‧‧‧ crack layer
27‧‧‧裝置晶片 27‧‧‧ device wafer
28‧‧‧磨削輪安裝座 28‧‧‧ grinding wheel mount
30‧‧‧磨削輪 30‧‧‧ grinding wheel
32‧‧‧磨削輪基台 32‧‧‧ grinding wheel abutment
34‧‧‧磨削研磨石 34‧‧‧ grinding grinding stone
a、b、A、X1‧‧‧方向 a, b, A, X1‧‧‧ directions
t‧‧‧最終完工厚度 t‧‧‧Final thickness
LB‧‧‧雷射光束 LB‧‧‧Laser beam
P‧‧‧聚光點 P‧‧‧ spotlight
圖1是半導體晶圓的正面側的立體圖。 1 is a perspective view of a front side of a semiconductor wafer.
圖2是表示溝形成步驟之立體圖。 Fig. 2 is a perspective view showing a groove forming step.
圖3是表示溝形成步驟之剖面圖。 Fig. 3 is a cross-sectional view showing a step of forming a groove.
圖4是表示保護膠帶貼附步驟之剖面圖。 Fig. 4 is a cross-sectional view showing a step of attaching a protective tape.
圖5是表示保持步驟的局部剖面側視圖。 Figure 5 is a partial cross-sectional side view showing the holding step.
圖6是表示雷射加工步驟的局部剖面側視圖。 Figure 6 is a partial cross-sectional side view showing a laser processing step.
圖7是表示磨削步驟的局部剖面側視圖。 Fig. 7 is a partial cross-sectional side view showing a grinding step.
圖8是磨削步驟後之晶圓的剖面圖。 Figure 8 is a cross-sectional view of the wafer after the grinding step.
以下，參照圖式對本發明的實施形態詳細地進行說明。參照圖1，所示為半導體晶圓11的正面側立體圖。在半導體晶圓(以下，有時簡稱為晶圓)11的正面11a上以複數條分割預定線13(切割道)所劃分成的各個區域中形成有IC、LSI等的裝置15。在晶圓11的外周形成有作為表示晶圓的結晶方位之標記的缺口17。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to Fig. 1, a front side perspective view of a semiconductor wafer 11 is shown. A device 15 such as an IC or an LSI is formed in each of the regions defined by a plurality of predetermined dividing lines 13 (cutting streets) on the front surface 11a of the semiconductor wafer (hereinafter sometimes referred to simply as the wafer) 11. A notch 17 as a mark indicating the crystal orientation of the wafer is formed on the outer circumference of the wafer 11.
在本發明的晶圓之加工方法中，首先，實施溝形成步驟，從晶圓11的正面11a沿著分割預定線13形成未達最終完工厚度之深度的複數條溝。圖2是表示溝形成步驟的立體圖，圖3為其剖面圖。在圖2以及圖3中，皆將吸引保持晶圓11的工作夾台省略。 In the wafer processing method of the present invention, first, a groove forming step is performed to form a plurality of grooves from the front surface 11a of the wafer 11 along the dividing line 13 to a depth that does not reach the final thickness. Fig. 2 is a perspective view showing a groove forming step, and Fig. 3 is a cross-sectional view thereof. In FIGS. 2 and 3, the work chuck that attracts the holding wafer 11 is omitted.
在圖2中，切削裝置的切削單元(切削構件)10包含有，可旋轉地收容在轉軸殼體12中的轉軸14，及裝設在轉軸14的前端部的切削刀16。 In FIG. 2, a cutting unit (cutting member) 10 of a cutting device includes a rotating shaft 14 rotatably housed in a rotating shaft housing 12, and a cutting blade 16 attached to a front end portion of the rotating shaft 14.
在溝形成步驟中，是使沿箭頭A方向高速旋轉的切削刀16沿著晶圓11的分割預定線13切入預定深度(未達晶圓的最終完工厚度的深度)，並一邊將圖未示之工作夾台朝箭頭X1方向加工傳送，一邊從晶圓11的正面11a沿著分割預定線13形成未達最終完工厚度之深度的溝19。 In the groove forming step, the cutting blade 16 that rotates at a high speed in the direction of the arrow A is cut along the planned dividing line 13 of the wafer 11 by a predetermined depth (the depth of the final finished thickness of the wafer is not reached), and the drawing is not shown. The working chuck is processed and conveyed in the direction of the arrow X1, and a groove 19 having a depth not reaching the final thickness is formed along the dividing line 13 from the front surface 11a of the wafer 11.
一邊將切削單元10依分割預定線13的每個間隔(pitch)分度傳送，一邊沿著在第1方向上延伸的所有分割預定線13皆形成溝19。其次，將已吸引保持晶圓11的圖未示之工作夾台90度旋轉，並沿著在與第1方向垂直相交的第2方向上延伸的分割預定線13形成同樣的溝19。 The groove 19 is formed along all the division planned lines 13 extending in the first direction while the cutting unit 10 is conveyed by each pitch of the division planned line 13. Next, the work chuck which is not shown in the drawing holding the wafer 11 is rotated by 90 degrees, and the same groove 19 is formed along the dividing line 13 extending in the second direction perpendicularly intersecting the first direction.
在此溝形成步驟中，形成比以往的先切割法中所形成的溝的深度還要淺的溝19。由於像這樣形成淺溝19，因此就可以使用含有細粒徑之研磨粒的切削刀16，且也可以減少溝形成時的正面崩裂。 In this groove forming step, a groove 19 which is shallower than the depth of the groove formed in the conventional prior cutting method is formed. Since the shallow groove 19 is formed in this manner, the cutting blade 16 containing the abrasive grains having a fine particle diameter can be used, and the frontal cracking at the time of groove formation can also be reduced.
在實施過溝形成步驟之後，實施在晶圓11的正面11a上貼附保護膠帶21的保護膠帶貼附步驟。圖4是表示保護膠帶貼附步驟實施後的剖面圖。 After the groove forming step is performed, a protective tape attaching step of attaching the protective tape 21 to the front surface 11a of the wafer 11 is performed. Fig. 4 is a cross-sectional view showing the step of attaching the protective tape.
在實施過保護膠帶貼附步驟後，如圖5所示，可實施保持步驟，以雷射加工裝置的工作夾台18隔著保護膠帶21保持晶圓11。當實施此保持步驟時，即可將晶圓11的背面11b露出。 After the protective tape attaching step is performed, as shown in FIG. 5, a holding step can be performed to hold the wafer 11 with the protective tape 21 by the working chuck 18 of the laser processing apparatus. When this holding step is performed, the back surface 11b of the wafer 11 can be exposed.
在實施過保持步驟後，如圖6所示，可實施雷射加工步驟，利用聚光器20將對晶圓11具有穿透性的波長的雷射光束LB之聚光點P定位在比晶圓11內部的最終完工厚度t還要靠近背面11b側的位置，以將雷射光束LB朝向晶圓11的背面11b而沿著分割預定線13進行照射，形成沿著分割預定線13的改質層23，並形成從改質層23往溝19延伸且沿著的分割預定線13的裂痕層25。最終完工厚度t為例如，300μm。 After the holding step is performed, as shown in FIG. 6, a laser processing step can be performed, and the concentrating point P of the laser beam LB having a wavelength that is transparent to the wafer 11 is positioned by the concentrator 20 to be larger than the crystal. The final finished thickness t inside the circle 11 is also closer to the position on the side of the back surface 11b to illuminate the laser beam LB toward the back surface 11b of the wafer 11 along the dividing line 13 to form a modification along the dividing line 13 The layer 23 is formed with a crack layer 25 which is formed from the reforming layer 23 toward the groove 19 and along the dividing line 13 to be divided. The final finished thickness t is, for example, 300 μm.
該雷射加工步驟是，在一邊將工作夾台18依分割預定線13的每個間隔分度傳送，一邊沿著在第1方向上延伸的所有分割預定線13皆實施過後，再將工作夾台18作90度旋轉之後，沿著在第2方向上延伸的所有分割預定線13也同樣地實施。 In the laser processing step, the working chuck 18 is divided and distributed at each interval of the dividing line 13 while all the dividing lines 13 extending in the first direction are implemented, and then the working folder is placed. After the stage 18 is rotated by 90 degrees, all the planned dividing lines 13 extending in the second direction are also similarly implemented.
此雷射加工步驟中的加工條件，是設定成例如以下所示。 The processing conditions in this laser processing step are set as follows, for example.
光源：LD激發式Q開關Nd：YVO4脈衝雷射 Light source: LD-excited Q-switch Nd: YVO4 pulse laser
波長：1064nm Wavelength: 1064nm
脈衝輸出功率：0.2W Pulse output power: 0.2W
重複頻率：80kHz Repeat frequency: 80kHz
聚光點徑：φ1μm Converging spot diameter: φ1μm
加工傳送速度：100mm/秒 Processing transfer speed: 100mm / sec
在實施過雷射加工步驟後，實施磨削步驟，以磨削構件將晶圓11的背面11b磨削以薄化至最終完工厚度t，同時除去改質層23，並沿著分割預定線13將晶圓11分割成裝置晶片27。參照圖7，針對此磨削步驟進行說明。 After the laser processing step is performed, a grinding step is performed to grind the back surface 11b of the wafer 11 with a grinding member to be thinned to a final finished thickness t while removing the reforming layer 23 and along the dividing line 13 The wafer 11 is divided into device wafers 27. This grinding step will be described with reference to Fig. 7 .
在磨削步驟中，是如圖7所示，以磨削裝置的工作夾台22隔著保護膠帶21吸引保持晶圓11的正面11a側，並使晶圓11的背面11b側露出。 In the grinding step, as shown in FIG. 7, the working chuck 22 of the grinding device sucks and holds the front surface 11a side of the wafer 11 via the protective tape 21, and exposes the back surface 11b side of the wafer 11.
磨削裝置的磨削單元(磨削構件)24包含有，可被馬達驅動旋轉的轉軸26、固定於轉軸26的前端的磨削輪安裝座28，及藉由複數個螺絲可裝卸地固定在磨削輪安裝座28上的磨削輪30。磨削輪30是由環狀的磨削輪基台32，及在磨削輪基台32的下端外周部固接成環狀的複數個磨削研磨石34所構成。 The grinding unit (grinding member) 24 of the grinding device includes a rotating shaft 26 that is rotatable by a motor, a grinding wheel mount 28 fixed to a front end of the rotating shaft 26, and detachably fixed to the shaft by a plurality of screws. The grinding wheel 30 on the wheel mount 28 is ground. The grinding wheel 30 is composed of an annular grinding wheel base 32 and a plurality of grinding stones 34 that are fixed in a ring shape at the outer peripheral portion of the lower end of the grinding wheel base 32.
在磨削步驟中，是一邊使工作夾台22沿著箭頭a的方向以例如300rpm旋轉，一邊使磨削輪30沿著與工作夾台22相同的方向，也就是沿著箭頭b方向以例如6000rpm旋 轉，同時作動圖未示之磨削單元傳送機構，以使磨削研磨石34接觸到晶圓11的背面11b。 In the grinding step, while the work chuck 22 is rotated at a direction of, for example, 300 rpm in the direction of the arrow a, the grinding wheel 30 is made in the same direction as the work chuck 22, that is, in the direction of the arrow b, for example. 6000rpm At the same time, the grinding unit conveying mechanism, not shown, is actuated so that the grinding stone 34 contacts the back surface 11b of the wafer 11.
並且，是將磨削輪30以預定的磨削傳送速度朝下方磨削傳送預定量，以實施晶圓11的磨削。當持續進行磨削而將晶圓11薄化至最終完工厚度t時，就能將改質層23除去並使磨削壓力作用到沿著分割預定線13的裂痕層25，以將晶圓11如圖8所示地，分割成一個個裝置晶片27。 Further, the grinding wheel 30 is ground to a predetermined amount by a predetermined grinding conveyance speed to perform grinding of the wafer 11. When the grinding is continued to thin the wafer 11 to the final finished thickness t, the reforming layer 23 can be removed and the grinding pressure is applied to the crack layer 25 along the dividing line 13 to transfer the wafer 11. As shown in FIG. 8, it is divided into individual device wafers 27.
依據本實施型態的加工方法，由於裝置晶片27的背面側是依裂痕層25形成的分割，因此能夠抑制崩裂的產生。又，由於晶圓11的正面11a側形成有溝19，因此即使於磨削中鄰接的晶片彼此接觸，也不會有產生正面崩裂的情形，因而不會有裝置15損傷的情形。 According to the processing method of the present embodiment, since the back side of the device wafer 27 is divided by the crack layer 25, the occurrence of cracking can be suppressed. Further, since the groove 19 is formed on the front surface 11a side of the wafer 11, even if the adjacent wafers are in contact with each other during the grinding, there is no possibility that the front surface is cracked, and thus the device 15 is not damaged.
由於晶圓11的正面11a側形成有溝19，因此將晶圓11分割成晶片27，並將已分割成晶片的晶圓11轉移至切割膠帶後，藉由進行洗淨就能夠充分地洗淨晶片27的裝置15側。 Since the groove 19 is formed on the front surface 11a side of the wafer 11, the wafer 11 is divided into the wafer 27, and the wafer 11 divided into wafers is transferred to the dicing tape, and the wafer 11 can be sufficiently washed by washing. The device 15 side of the wafer 27.
又，本發明的晶圓之加工方法對於沿著晶圓11的分割預定線13形成有TEG(Test Element Group)等的晶圓是有效的。 Further, the wafer processing method of the present invention is effective for forming a wafer such as TEG (Test Element Group) along the planned dividing line 13 of the wafer 11.
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